CN110656376B - 一种基于可控生长中心制备碳化硅单晶的方法 - Google Patents
一种基于可控生长中心制备碳化硅单晶的方法 Download PDFInfo
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- CN110656376B CN110656376B CN201910881831.7A CN201910881831A CN110656376B CN 110656376 B CN110656376 B CN 110656376B CN 201910881831 A CN201910881831 A CN 201910881831A CN 110656376 B CN110656376 B CN 110656376B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
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CN111349971B (zh) * | 2020-03-30 | 2021-04-23 | 福建北电新材料科技有限公司 | 晶体原料盛载装置及晶体生长装置 |
CN113122914B (zh) * | 2020-06-09 | 2023-02-28 | 北京世纪金光半导体有限公司 | 一种维持大尺寸碳化硅晶型稳定的装置及生长方法 |
CN111705363A (zh) * | 2020-07-17 | 2020-09-25 | 河北同光科技发展有限公司 | 碳化硅单晶快速扩径生长方法 |
CN115182037A (zh) * | 2022-07-08 | 2022-10-14 | 安徽微芯长江半导体材料有限公司 | 一种对碳化硅晶体生长面型调制的装置 |
CN116815320B (zh) * | 2023-06-28 | 2024-01-12 | 通威微电子有限公司 | 碳化硅晶体生长装置、方法及碳化硅晶体 |
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CN101680112A (zh) * | 2007-01-16 | 2010-03-24 | Ii-Vi有限公司 | 借助多层生长导向器的直径导向式SiC升华生长 |
CN202390579U (zh) * | 2011-12-09 | 2012-08-22 | 北京有色金属研究总院 | 一种物理气相输运法生长碳化硅单晶用石墨坩埚 |
CN103320851A (zh) * | 2013-06-05 | 2013-09-25 | 中国科学院上海硅酸盐研究所 | 大尺寸15r 碳化硅晶体的制备方法 |
CN105671637A (zh) * | 2016-02-02 | 2016-06-15 | 北京华进创威电子有限公司 | 一种pvt法生长碳化硅单晶缓释的装置 |
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Address after: No. 6001, North Third Ring Road, Baoding City, Hebei Province, 071000 Patentee after: Hebei Tongguang Semiconductor Co.,Ltd. Address before: No. 6001, North Third Ring Road, Baoding City, Hebei Province, 071000 Patentee before: HEBEI TONGGUANG CRYSTAL Co.,Ltd. |
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