CN110637354B - 于未事先图样化的基板上电器互连的电路元件 - Google Patents
于未事先图样化的基板上电器互连的电路元件 Download PDFInfo
- Publication number
- CN110637354B CN110637354B CN201880030663.4A CN201880030663A CN110637354B CN 110637354 B CN110637354 B CN 110637354B CN 201880030663 A CN201880030663 A CN 201880030663A CN 110637354 B CN110637354 B CN 110637354B
- Authority
- CN
- China
- Prior art keywords
- dielectric substrate
- die
- droplets
- conductive trace
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 147
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 38
- 238000012546 transfer Methods 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 26
- 238000007639 printing Methods 0.000 claims description 24
- 239000000853 adhesive Substances 0.000 claims description 19
- 230000001070 adhesive effect Effects 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 16
- 239000011888 foil Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 9
- 239000012790 adhesive layer Substances 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- 239000004744 fabric Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 38
- 230000008569 process Effects 0.000 description 8
- 238000010023 transfer printing Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/76—Apparatus for connecting with build-up interconnects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/2401—Structure
- H01L2224/24011—Deposited, e.g. MCM-D type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/245—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
- H01L2224/2732—Screen printing, i.e. using a stencil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73259—Bump and HDI connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/76—Apparatus for connecting with build-up interconnects
- H01L2224/7615—Means for depositing
- H01L2224/76151—Means for direct writing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/76—Apparatus for connecting with build-up interconnects
- H01L2224/7615—Means for depositing
- H01L2224/76151—Means for direct writing
- H01L2224/76158—Means for direct writing including a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/76—Apparatus for connecting with build-up interconnects
- H01L2224/7625—Means for applying energy, e.g. heating means
- H01L2224/76261—Laser
- H01L2224/76263—Laser in the upper part of the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/76—Apparatus for connecting with build-up interconnects
- H01L2224/766—Means for supplying the material of the interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/76—Apparatus for connecting with build-up interconnects
- H01L2224/767—Means for aligning
- H01L2224/76702—Means for aligning in the upper part of the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/76—Apparatus for connecting with build-up interconnects
- H01L2224/767—Means for aligning
- H01L2224/76753—Means for optical alignment, e.g. sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/76—Apparatus for connecting with build-up interconnects
- H01L2224/769—Means for monitoring the connection process
- H01L2224/76901—Means for monitoring the connection process using a computer, e.g. fully- or semi-automatic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82009—Pre-treatment of the connector or the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/821—Forming a build-up interconnect
- H01L2224/82101—Forming a build-up interconnect by additive methods, e.g. direct writing
- H01L2224/82102—Forming a build-up interconnect by additive methods, e.g. direct writing using jetting, e.g. ink jet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/821—Forming a build-up interconnect
- H01L2224/82101—Forming a build-up interconnect by additive methods, e.g. direct writing
- H01L2224/82103—Forming a build-up interconnect by additive methods, e.g. direct writing using laser direct writing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/8212—Aligning
- H01L2224/82121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
- H01L2224/82122—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors by detecting inherent features of, or outside, the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83874—Ultraviolet [UV] curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0528—Patterning during transfer, i.e. without preformed pattern, e.g. by using a die, a programmed tool or a laser
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/128—Molten metals, e.g. casting thereof, or melting by heating and excluding molten solder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
- H05K2203/1469—Circuit made after mounting or encapsulation of the components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
- H05K3/305—Affixing by adhesive
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
一种用于生产电子装置的方法包括将一晶粒固定至一介质基板,该晶粒包括具有多个整体式触点的一电子元件。在固定该晶粒之后,在该介质基板上及该多个整体式触点至少其中之一上印刷一导电线路,以在该基板上的该导电线路与该电子元件之间形成欧姆连接。
Description
技术领域
本发明是关于电子装置的制作,且具体而言是关于用于通过将导电线路(conductive trace)直写于一基板上来生产电路的方法及装置。
背景技术
在激光直写(laser direct-write;LDW)技术中,使用一激光光束、通过受控材料剥蚀(ablation)或沉积来形成具有空间解析三维(three dimensional;3D)结构的一经图样化表面。激光诱导前向转移(laser-induced forward transfer;LIFT)为一种可应用于在一表面上沉积微图样的激光直写技术。
在激光诱导前向转移中,激光光子提供驱动力以自一供体膜(donor film)朝一受体基板(acceptor substrate)喷射一小体积的材料。通常,激光光束与被涂覆至一非吸收性载体基板上的供体膜的内侧相互作用。换言之,在入射激光光束传播穿过透明载体之后,光子才被膜的内表面吸收。在某一能量临界值以上,自供体膜朝基板的表面喷射材料,在此项技术中已知的激光诱导前向转移系统中,该基板通常被放置成紧密靠近或甚至接触供体膜。可改变所施加激光能量,以控制在受辐照膜体积内生成的前向推进力。纳高(Nagel)及利珀特(Lippert)于在以下期刊中发布的“用于装置制作的激光诱导前向转移(Laser-Induced Forward Transfer for the Fabrication of Devices)”中研究了激光诱导前向转移的原理及在微制作中的应用:纳米材料:利用激光进行处理及表征(Nanomaterials:Processing and Characterization with Lasers),辛格(Singh)等人,编辑(威利-VCH出版社有限责任两合公司(Wiley-VCH Verlag GmbH&Co.KGaA),2012年),第255页至第316页。
已为多种应用(例如:电器电路修复)开发出使用金属供体膜的激光诱导前向转移技术。举例而言,PCT国际公开案第WO 2010/100635号(其公开内容以引用方式并入本文中)阐述了一种修复电器电路的系统及方法,其中使用一激光来预先处理形成于一电路基板上的一导体的一导体修复区域。如以下的一方式对一供体基板施加激光光束:使供体基板的一部分自供体基板脱离并被转移至一预定导体位置。
作为另一实例,PCT国际公开案第WO 2015/181810号(其公开内容以引用方式并入本文中)阐述了一种使用一透明供体基板及一供体膜来进行材料沉积的方法,该透明供体基板具有相对的一第一表面及一第二表面,该供体膜包括形成于第二表面上的一金属。将供体基板靠近一受体基板定位,使第二表面面朝受体基板。引导激光辐射脉冲穿过供体基板的第一表面并照射于供体膜上,以诱导熔融材料的微滴(droplet)自供体膜喷射至受体基板上。
激光诱导前向转移可用于在多种类型的基板上印刷金属线路。举例而言,PCT国际公开案第WO 2016/063270号(其公开内容以引用方式并入本文中)阐述了一种使用上面沉积有一供体膜的一透明供体基板进行金属化的方法,该供体膜包括厚度小于2微米(μm)的一金属。将供体基板靠近包括一半导体材料的一受体基板定位,使供体膜面朝受体基板且在供体膜与受体基板之间具有至少0.1毫米(mm)的一间隙。引导脉冲持续时间小于2纳秒(ns)的一激光脉冲列照射于供体基板上,以使金属的微滴自供体层喷射并落于受体基板上,借此形成与半导体材料呈欧姆接触的一电路线路。
发明内容
下文中所述的本发明实施例提供用于将一基板上的各电子元件互连的新技术。
因此,根据本发明的一实施例,提供一种用于生产电子装置的方法。该方法包括将一晶粒固定至一介质基板,该晶粒包括具有多个整体式触点(integral contact)的一电子元件。在固定该晶粒之后,在该介质基板上及该多个整体式触点至少其中之一上印刷一导电线路,以在该介质基板上的该导电线路与该电子元件之间形成欧姆连接(ohmicconnection)。
在某些实施例中,印刷该导电线路的步骤包括:将一导电材料的多个微滴喷射至该介质基板上及该多个整体式触点至少其中之一上。在所公开实施例中,喷射该多个微滴的步骤包括:引导一脉冲激光光束(pulsed laser beam)照射于包括该导电材料的一供体膜上,借此通过激光诱导前向转移(LIFT)而喷射该多个微滴。在一个实施例中,喷射该多个微滴的步骤包括:将该脉冲激光光束引导成使该多个微滴是相对于该介质基板的一表面以一斜角朝该晶粒喷射。另外或作为另一选择,喷射该多个微滴的步骤包括:引导该脉冲激光光束照射于一第一供体膜上以在该介质基板上沿该导电线路的一轨道形成一粘附层(adhesion layer),并接着引导该脉冲激光光束照射于一第二供体膜上以在该粘附层上积增该导电线路,该第一供体膜包括具有一第一熔化温度的一第一金属,该第二供体膜包括具有一第二熔化温度的一第二金属,该第二熔化温度高于该第一熔化温度。
通常,该晶粒具有相对的一上部侧及一下部侧,其中该下部侧固定至该介质基板,且在某些实施例中,上面印刷有该导电线路的该多个整体式触点至少其中之一是位于该上部侧上。在一所公开实施例中,喷射该多个微滴的步骤包括:在该电子元件旁边自该介质基板至该多个整体式触点至少其中之一由所喷射的该多个微滴积增一柱。作为另一选择,上面印刷有该导电线路的该多个整体式触点至少其中之一是位于该上部侧与该下部侧间的横向侧(lateral side)其中之一上。
在一所公开实施例中,该方法包括:在喷射该多个微滴之前,于该基板中形成一孔阵列以抑制该多个微滴自该介质基板反冲(recoil)。
在一个实施例中,该方法包括通过以下在该介质基板上印刷多个粘合剂点(adhesive dot):通过激光诱导前向转移(LIFT)将一粘合剂材料的多个微滴喷射至该介质基板上,其中固定该晶粒的步骤包括将该晶粒放置于该多个粘合剂点上。另外或作为另一选择,该方法包括:在该晶粒已被固定至该介质基板之后,通过激光诱导前向转移LIFT将一粘合剂材料的多个微滴喷射至该晶粒的该上部侧上。
在所公开实施例中,该导电线路是印刷于该介质基板上的一轨迹(locus)上,在固定该晶粒之前,沿该轨迹不存在导电材料。在某些实施例中,印刷该导电线路的步骤包括:自动感测该多个整体式触点至少其中之一的一位置,并因应于自动感测到的该位置而印刷该导电线路。
在某些实施例中,该介质基板包括一柔性箔(flexible foil),该柔性箔可包括选自由以下组成的一材料群组之一材料:聚合物、纸张、及织物。
根据本发明的一实施例,亦提供一种用于生产电子装置的系统。该系统包括一放置站(placement station),用以将一晶粒固定至一介质基板,该晶粒包括具有多个整体式触点的一电子元件。一印刷站(printing station)用以在该介质基板上及已固定至该介质基板的该晶粒的该多个整体式触点至少其中之一上印刷一导电线路,以在该介质基板上的该导电线路与该电子元件之间形成欧姆连接。
结合附图阅读以下对本发明各实施例的详细说明,将会更充分地理解本发明,其中:
附图说明
图1为根据本发明一实施例用于电子电路组装的一系统的示意性侧视图及方块图;
图2A至图2D为显示根据本发明一实施例在生产一电子电路时的连续阶段的示意性图解;
图3为根据本发明一实施例由一扫描电子显微镜(scanning electronmicroscope;SEM)对组装至一电路中的一电子元件所撷取的一影像;以及
图4A至图4C为一基板上的一电子元件的示意性侧视图,其显示根据本发明一实施例在将一电路线路连接至电子元件时的连续阶段。
具体实施方式
在传统的电子电路制造工艺中,首先在一介质基板(例如:一刚性或柔性印刷电路基板)上沉积由导电线路形成的一图样。接着,将电路元件(例如:半导体晶粒以及其他主动及被动元件)固定至基板并通常通过焊接或打线(wire bonding)连接至线路。此为电路制造及组装中被公认的操作次序。
然而,在现代电子产品中,日益需要将电子电路整合至可能与传统印刷电路技术不相容的其他种类的基板(刚性及柔性)上。举例而言,某些应用要求将电子装置安装并互连于柔性基板(例如:塑胶箔、纸张或织物)上。使传统工艺适应此基板是具有挑战性且昂贵的。
本文所述的本发明实施例通过反转被公认的操作次序来解决此种问题:首先,例如通过一适合的粘合剂将一晶粒固定至介质基板,该晶粒包括具有多个整体式触点的一电子元件。在固定晶粒之后,在介质基板上及晶粒的整体式触点至少其中之一上印刷一导电线路,因此在基板上的导电线路与电子元件之间形成欧姆连接。可将其他主动及被动元件固定至基板并以相似的方式进行互连。
可以此种方式在介质基板上的一轨迹上印刷导电线路,在固定晶粒之前,该轨迹上不存在导电材料。换言之,所公开技术在执行对线路的沉积及将线路连接至电路元件时仅需要进行一个工艺步骤。为确保准确地印刷导电线路,可在晶粒被固定至基板之后使用一自动感测系统(例如:一电脑视觉系统)来感测晶粒的触点的位置,且接着可导引对线路的印刷至所感测到的位置。
在所公开实施例中,使用一激光诱导前向转移工艺来印刷导电线路,在该激光诱导前向转移工艺中,将一导电材料的微滴喷射至介质基板上及晶粒的整体式触点上。(此实施例假设晶粒的下部侧被固定至介质基板,且上面印刷有导电线路的整体式触点是位于晶粒的上部侧或横向侧上。)如下文中详细所述,对金属微滴的激光诱导前向转移印刷能够克服基板与晶粒上部侧上的触点间的大的高度差距(大约为数百微米)且同时能够产生极精细线路。此线路可通过线宽小至10微米至20微米的激光诱导前向转移来印刷,且可在需要时被修整(例如:通过印刷后激光处理)成甚至更窄的宽度。此外,对金属及高粘性膏料的激光诱导前向转移印刷对基板性质(例如:孔隙度(porosity)、液体吸收度(liquidabsorbance)及表面能量)相对不敏感,且因此可甚至在多孔的吸收性基板(例如:纸张及织物)上以高准确度印刷精细线路。此种工艺可用于形成后来将耐受(在极限内)对基板的弯曲及拉伸的电路。
然而,作为另一选择或另外,在某些应用中,可应用此项技术中已知的其他用于导电材料直写的技术来形成导电线路至少其中的某些。
图1为根据本发明一实施例用于电子电路组装的一系统20的方块图及侧视图。在所绘实施例中,一放置站26将一元件(例如:一半导体晶粒24)放置于一电路基板22上。放置站26可包括例如一取放机器(pick-and-place machine),在该取放机器中,一机械臂28根据一预定义电路布局,在来自一控制单元32的指令下将元件放置于基板22上。通常,基板22被安装于一定位总成30(例如:一平移载台)上,以使臂28能够到达所有所需位置。然而,放置站26的操作与此项技术中已知的取放机器的操作的不同在于,晶粒24是在印刷导电线路的前被放置于基板22上,该导电线路随后将连接至晶粒。
视需要,为确保在系统20中实施后续操作的准确度,一感测站34侦测基板22上放置晶粒24的实际位置。感测站34包括例如:一照相机36,以撷取基板22的影像。控制单元32处理此等影像,以确定元件在基板上的确切位置。虽然为使概念清晰起见在图1中将感测站34显示为一单独的单元,然而,在实务中,此等感测器(例如:照相机36)及感测功能可与系统20中的其他各站整合于一起。在系统20中应用感测站34的特别有利之处在于克服了此项技术中已知的取放工具的有限准确度,以及在组装工艺的过程中在一柔性基板的形状上发生的可能畸变。精确地感测晶粒24及其他元件的位置使得能够在元件已被固定至基板22之后准确地印刷极精细的互连线路(例如:宽度为20微米或更小)。
更一般而言,控制单元32可依据晶粒相对于其他电路元件的实际位置来调适欲印刷的线路。举例而言,当一给定晶粒上存在高密度的电路元件或诸多输入/输出接脚,以及当存在窄线而应将晶粒相对于电路其余部分的最终(实际)位置考量在内时,此种调适是尤其有用的。在此等情形下,控制单元32将线路位置选择成符合电气设计规则并避免电路缺陷。此种方法可用于形成元件密度大至使用传统制造工艺可达成的程度或甚至更大程度的电路。
视基板22的材料性质而定,可使用一表面准备站(surface preparationstation)38来处理基板22的表面,以增强线路在表面上的粘附性。举例而言,当表面极为平滑时,表面准备站38可在表面中形成小孔(通常为数微米深及数微米宽)的阵列,此将使表面粗糙化且在后续激光诱导前向转移印刷阶段中降低金属微滴自表面的反冲。具体而言,该孔可是在欲印刷于基板22上的导电线路的轨迹中形成,或者作为另一选择是在基板22的更宽区域上形成。该孔可是通过例如:一激光而钻制,或者是以机械方式压印于基板22的表面中。
一印刷站(例如:一激光诱导前向转移站40)在基板22上印刷与晶粒24上的接触垫呈欧姆连接的导电线路56。激光诱导前向转移站40包括一光学总成41,在光学总成41中,一激光42发出脉冲辐射。光学装置46将激光光束48聚焦至上面沉积有至少一个供体膜52的一透明供体基板50上。定位总成30将供体基板50及/或电路基板22定位成使得供体基板50靠近受体基板的上表面,使供体膜52面朝电路基板且在供体膜52与电路基板之间具有一小的间隙(通常不超过几百微米且可能更小)。虽然为简明起见在图1中将定位总成30显示为位于电路基板22下方的一基本X-Y-Z载台,然而在实务中,另外或作为另一选择,激光诱导前向转移站40中的定位总成30可能够对供体基板50及/或光学总成41的元件进行定位,如熟习此项技术者将明了。
供体基板50通常包括一玻璃或塑胶片材或其他适合的透明材料,而供体膜52包括一适合的供体材料,例如:一或多种纯金属及/或金属合金。通常,供体膜的厚度不超过几微米。
光学装置46将光束48聚焦成穿过供体基板50的外表面并照射于供体膜52上,借此使一流体的微滴54自供体膜52喷射并飞跨间隙而落于电路基板22上。该流体包括呈熔融形式的供体膜52中的材料,该材料接着在受体表面上硬化以形成具有由印刷图样界定的一形状的固体块。一扫描器44(例如:一旋转镜及/或一声光束偏转器)在控制单元32的控制下将激光光束48扫描成在供体膜52上辐照出不同光点且因此在电路基板22上的适当位置中形成导电线路56。
激光42例如:包括具有倍频输出(frequency-doubled output)的一脉冲Nd:YAG激光,此允许脉冲振幅由控制单元32方便地控制。通常,控制单元32包括一通用电脑,其具有适用于控制以下并自以下接收回馈的介面:光学总成41、定位总成30及系统20的其他元件。发明人已发现,为达成良好的激光诱导前向转移沉积结果,最佳脉冲持续时间处于0.1纳秒至1纳秒的范围中,但视应用要求而定,可使用更长或更短的脉冲。光学装置46可以类似方式进行控制,以调整由激光光束在供体膜52上形成的焦斑(focal spot)的大小。
微滴54的大小尤其由激光脉冲能量、持续时间及焦斑大小、以及供体膜厚度决定。举例而言,上述的PCT国际公开案第2015/181810号阐述了可应用于使每一激光脉冲使得自供体膜喷射一个相对大的微滴的激光诱导前向转移技术及参数。此等技术及参数可有利地应用于激光诱导前向转移站40中,乃因微滴是以准确的方向性朝电路基板22喷射,进而使得有可能在喷射微滴期间将供体膜52保持于距受体基板至少100微米的一距离处并精确地形成所需结构。
在某些实施例中,激光诱导前向转移站40使得自不同供体膜52喷射组成物不同的二或更多种流体的微滴54。举例而言,可通过自激光42引导光束48照射于含有不同材料的供体膜52(位于同一供体基板50或不同供体基板上)的不同区域上来喷射不同流体。可依序朝电路基板22上的同一位置及/或朝不同位置喷射不同流体,以印刷所需线路56。
举例而言,为增强线路56与某些类型的电路基板(例如:聚合物基板)的粘附性,使用一第一供体膜52来沿线路的轨迹印刷一初始粘附层,第一供体膜52包括具有一低熔化温度的一金属,例如:锡或一锡合金。低温金属微滴在使聚合物局部熔化的同时快速地冷却,因此会形成将易于粘附温度及能量更高的后续激光微滴的一层。(此粘附层不需要为密集的或完全地涂覆基板。覆盖线路56的既定面积的不超过20%至30%的一低密度粘附层通常便足以锚固后续结构层。)此后,在粘附层上印刷具有一结构金属(例如:铜、铝或镍)的一第二供体膜52,以达到线路的所需尺寸、连接性及导电性。如前面所述,控制单元32控制扫描器44及光学总成41的其他元件,以将来自膜52的供体材料写至电路基板22上的适当位置并视需要进行多个遍次(pass),以将供体材料的沉积体积积增至所需厚度。
图2A至图2D为显示根据本发明一实施例在生产一电子电路时的连续阶段的示意性图解。作为图2A所示的一预备步骤,将基板22涂覆一粘合剂层60或作为另一选择涂覆一适合的粘合剂图样(例如:一粘合剂点阵列(图中未显示)),粘合剂层60或粘合剂图样亦可通过一激光诱导前向转移工艺来印刷。(当需要时,亦可使用粘合剂激光诱导前向转移印刷在晶粒24及其他电路元件的顶部上印刷粘合剂点。)接着,例如通过放置站26将晶粒24固定于适当位置中,使晶粒24的下部侧搁置于粘合剂层60上,如图2B中所示。在所有元件已被放置于基板22上之后,可使粘合剂层60固化(例如,通过施加紫外线辐射或热量),以将元件牢固地保持于适当位置中。
当必要时,表面准备站38在基板22上准备轨道62,如图2C中所示,随后将在轨道62上印刷线路56。如前面所阐释,此种准备对于固有的粗糙度不足以捕获并保持由激光诱导前向转移站40印刷的微滴的材料而言为有利的。轨道62可例如含有由直径为微滴54的直径的1倍至2倍且深度为大致3微米至6微米的潜孔形成的一阵列。作为另一选择或另外,可操作激光诱导前向转移站来形成一初始金属粘附层,如以上所阐释。另一方面,可无需在足够多孔的基板材料上进行激光诱导前向转移印刷前的表面准备。
最终,由激光诱导前向转移站40在基板22上及在晶粒24的上部侧上的整体式触点上印刷导电线路56,如图2D中所示。线路56积增于晶粒24的边缘上,以与晶粒的触点连接。(此后一步骤的一实施方案的细节显示于图4A至图4C中。)虽然激光诱导前向转移站40能够如以上所阐释印刷极精细线路,然而在某些情形中,可印刷更宽及/或更厚的导电线路以在操作中远离电路元件来散热。
图3为根据本发明一实施例由一扫描电子显微镜(Scanning ElectronMicroscope;SEM)对组装至基板22上的一实际晶粒24所撷取的一影像。在此实例中,基板22为一聚对苯二甲酸乙二酯(polyethylene terephthalate;PET)箔,而晶粒24包括呈一表面安装式封装形式的一发光二极管(light-emitting diode;LED)。线路56是自激光诱导前向转移微滴积增而成,且在晶粒的“凸肩(shoulder)”上延伸以到达上部侧上的接触垫。在位于晶粒24的二个相对侧上的线路56之间施加一适合的电压会使发光二极管发出光。
图4A至图4C为基板22上的晶粒24的示意性侧视图,其显示根据本发明一实施例在将一电路线路连接至晶粒24上部侧上的触点70时的连续阶段。在如图4A中所示首先放置晶粒24之后,激光诱导前向转移站40沉积连续微滴72,以形成高达触点70的一柱74,如图4B至图4C中所示。发明人已通过积增成堆的单个微滴54而形成宽度为10微米至20微米的此种柱。随着柱74的高度增长,定位总成30可将供体基板50远离电路基板移动,以在供体表面与受体表面之间维持一充足间隙。
期望将一小的倾斜度(大约3°)构建至柱中,以防止在柱与晶粒触点之间打通间隙。另外或作为另一选择,可应用成角度式激光诱导前向转移印刷(其中自供体膜52相对于基板22的表面以一斜(非垂直)角喷射微滴),以利用金属保形地涂覆晶粒的横向侧而使柱与晶粒之间不具有间隙,且因此增强线路及连接的机械稳健性(mechanical robustness)。例如,在PCT国际公开案第WO 2016/116921号(其公开内容以引用方式并入本文中)中阐述了在此方面可使用的成角度式激光诱导前向转移印刷技术。
柱74取代了用于在此项技术中已知的电子装置中形成此种触点的打线。使用激光诱导前向转移来形成此种触点既增强了装置相对于机械冲击的稳健性又可减小整体大小,乃因不需要在元件周围为打线的连接留出空间。
虽然在各图中所示及在上文所述的实例是关于特定类型的元件,然而本发明的原理可应用于组装包括广泛的不同种类的元件的电路,该元件包括(但不限于):
·半导体晶粒。
·主动装置,例如电池、光伏打装置、感测器、光电子装置、薄膜装置、及微机电系统(micro-electromechanical system;MEMS)装置。
·经预先组装的混合式装置,例如上面已安装有元件的刚性或柔性箔。
·表面安装式装置,例如离散电晶体、电容器、电感器及电阻器。
因此,应了解,以上所述的实施例是以举例方式阐述,且本发明并非仅限于上文中所具体显示及阐述的内容。相反,本发明的范围包括上文中所述的各种特征的组合及子组合以及熟习此项技术者在阅读前述说明之后将设想到并且先前技术中尚未公开的其变形形式及润饰。
Claims (20)
1.一种用于生产电子装置的方法,其中该方法包括:
将一晶粒固定至一介质基板,该晶粒包括具有多个整体式触点的一电子元件,其中该晶粒被安置在该介质基板的主体的外部,使得该晶粒在该介质基板的表面上方延伸;以及
于固定该晶粒之后,在该介质基板上及该多个整体式触点中的至少一者上印刷一导电线路,以在该介质基板上的该导电线路与该电子元件之间形成欧姆连接,其中印刷该导电线路包括将一导电材料的多个微滴喷射至该介质基板上及该多个整体式触点中的该至少一者上,其中喷射该多个微滴包括引导一脉冲激光光束照射于包括该导电材料的一供体膜上,借此通过激光诱导前向转移而喷射该多个微滴,其中该晶粒具有相对的一上部侧及一下部侧,其中该下部侧固定至该介质基板,其中上面印刷有该导电线路的该多个整体式触点中的该至少一者被印刷在该上部侧上,其中喷射该多个微滴包括:引导该脉冲激光光束照射于一第一供体膜上以在该介质基板上沿该导电线路的一轨道形成一粘附层,并接着引导该脉冲激光光束照射于一第二供体膜上以在该粘附层上积增该导电线路,该第一供体膜包括具有一第一熔化温度的一第一金属,该第二供体膜包括具有一第二熔化温度的一第二金属,该第二熔化温度高于该第一熔化温度,其中喷射该多个微滴包括在该电子元件旁边自该介质基板至该多个整体式触点中的该至少一者用所喷射的该多个微滴积增一柱,且其中在该多个整体式触点中的该至少一者上的该多个微滴中的至少一者邻近该柱且将该多个整体式触点中的该至少一者连接到该柱。
2.如权利要求1所述的方法,其中喷射该多个微滴包括:将该脉冲激光光束引导成使该多个微滴是相对于该介质基板的该表面以一斜角朝该晶粒喷射。
3.如权利要求1所述的方法,其中该晶粒在该上部侧与该下部侧之间具有多个横向侧,且其中上面印刷有该导电线路的该多个整体式触点中的至少一者与该多个横向侧中的一者分开。
4.如权利要求1所述的方法,其包括在喷射该多个微滴之前,于该介质基板中形成一孔阵列以抑制该多个微滴自该介质基板反冲。
5.如权利要求1所述的方法,其包括通过以下在该介质基板上印刷多个粘合剂点:通过激光诱导前向转移将一粘合剂材料的多个微滴喷射至该介质基板上,其中固定该晶粒的步骤包括将该晶粒放置于该多个粘合剂点上。
6.如权利要求1所述的方法,其中该方法包括:在该晶粒被固定至该介质基板之后,通过激光诱导前向转移LIFT将一粘合剂材料的多个微滴喷射至该晶粒的该上部侧上。
7.如权利要求1所述的方法,其中该导电线路是印刷于该介质基板上的一轨迹上,在固定该晶粒之前,沿该轨迹不存在导电材料。
8.如权利要求7所述的方法,其中印刷该导电线路的步骤包括:自动感测该多个整体式触点至少其中之一的一位置,并因应于自动感测到的该位置而印刷该导电线路。
9.如权利要求1所述的方法,其中该介质基板包括一柔性箔。
10.如权利要求9所述的方法,其中该柔性箔包括选自由以下组成的一材料群组的一材料:聚合物、纸张及织物。
11.一种用于生产电子装置的系统,其中该系统包括:
一放置站,其经配置以用于固定一晶粒以在一介质基板的表面上方延伸,使得该晶粒安置在该介质基板的主体的外部,该晶粒包括具有多个整体式触点的一电子元件;以及
一印刷站,用以在该介质基板上及已固定至该介质基板的该晶粒的该多个整体式触点中的至少一者上印刷一导电线路,以在该介质基板上的该导电线路与该电子元件之间形成欧姆连接,其中该印刷站经配置以通过将一导电材料的多个微滴喷射至该介质基板上及该多个整体式触点中的该至少一者上来印刷该导电线路,其中该印刷站包括一激光,该激光用以发出一脉冲激光光束以照射于包括该导电材料的一供体膜上,借此通过激光诱导前向转移喷射该多个微滴,其中该晶粒具有相对的一上部侧及一下部侧,其中该下部侧固定至该介质基板,其中上面印刷有该导电线路的该多个整体式触点中的该至少一者被印刷在该上部侧上,其中该印刷站包括多个光学装置,该多个光学装置用以引导该脉冲激光光束照射于一第一供体膜上以在该介质基板上沿该导电线路的一轨道形成一粘附层,并接着引导该脉冲激光光束照射于一第二供体膜上以在该粘附层上积增该导电线路,该第一供体膜包括具有一第一熔化温度的一第一金属,该第二供体膜包括具有一第二熔化温度的一第二金属,该第二熔化温度高于该第一熔化温度,其中该印刷站经配置以在该电子元件旁边自该介质基板至该多个整体式触点中的该至少一者用所喷射的该多个微滴积增一柱,且其中在该多个整体式触点中的该至少一者上的该多个微滴中的至少一者邻近该柱且将该多个整体式触点中的该至少一者连接到该柱。
12.如权利要求11所述的系统,其中该印刷站用以将该脉冲激光光束引导成使该多个微滴是相对于该介质基板的该表面以一斜角朝该晶粒喷射。
13.如权利要求11所述的系统,其中该晶粒在该上部侧与该下部侧之间具有多个横向侧,且其中上面印刷有该导电线路的该多个整体式触点中的至少一者与该多个横向侧中的一者分开。
14.如权利要求11所述的系统,其包括一表面准备站,该表面准备站用以在喷射该多个微滴的前于该介质基板中形成一孔阵列,以抑制该多个微滴自该介质基板反冲。
15.如权利要求11所述的系统,其中该印刷站用以通过以下在该介质基板上印刷多个粘合剂点:通过激光诱导前向转移将一粘合剂材料的多个微滴喷射至该介质基板上,且其中该放置站用以将该晶粒放置于该多个粘合剂点上。
16.如权利要求11所述的系统,其中该印刷站用以在该晶粒被固定至该介质基板之后,通过激光诱导前向转移LIFT将一粘合剂材料的多个微滴喷射至该晶粒的该上部侧上。
17.如权利要求11所述的系统,其中该导电线路是印刷于该介质基板上的一轨迹上,在固定该晶粒之前,沿该轨迹不存在导电材料。
18.如权利要求17所述的系统,其包括一感测器,该感测器用以自动感测该多个整体式触点至少其中之一的一位置,其中该印刷站用以因应于自动感测到的该位置而印刷该导电线路。
19.如权利要求11所述的系统,其中该介质基板包括一柔性箔。
20.如权利要求19所述的系统,其中该柔性箔包括选自由以下组成的一材料群组之一材料:聚合物、纸张、及织物。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762510286P | 2017-05-24 | 2017-05-24 | |
US62/510,286 | 2017-05-24 | ||
PCT/IL2018/050455 WO2018216002A1 (en) | 2017-05-24 | 2018-04-26 | Electrical interconnection of circuit elements on a substrate without prior patterning |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110637354A CN110637354A (zh) | 2019-12-31 |
CN110637354B true CN110637354B (zh) | 2024-03-08 |
Family
ID=64395438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201880030663.4A Active CN110637354B (zh) | 2017-05-24 | 2018-04-26 | 于未事先图样化的基板上电器互连的电路元件 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11881466B2 (zh) |
JP (1) | JP2020521331A (zh) |
KR (1) | KR20200010208A (zh) |
CN (1) | CN110637354B (zh) |
TW (1) | TW201901887A (zh) |
WO (1) | WO2018216002A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113906834A (zh) * | 2019-05-01 | 2022-01-07 | Io技术集团公司 | 用以使用3d印刷电连接芯片与顶部连接器的方法 |
EP3852132A1 (en) | 2020-01-20 | 2021-07-21 | Infineon Technologies Austria AG | Additive manufacturing of a frontside or backside interconnect of a semiconductor die |
US11446750B2 (en) | 2020-02-03 | 2022-09-20 | Io Tech Group Ltd. | Systems for printing solder paste and other viscous materials at high resolution |
US11622451B2 (en) | 2020-02-26 | 2023-04-04 | Io Tech Group Ltd. | Systems and methods for solder paste printing on components |
US11627667B2 (en) * | 2021-01-29 | 2023-04-11 | Orbotech Ltd. | High-resolution soldering |
KR102668012B1 (ko) * | 2020-06-04 | 2024-05-21 | 오르보테크 엘티디. | 고해상도 솔더링 |
US11497124B2 (en) | 2020-06-09 | 2022-11-08 | Io Tech Group Ltd. | Methods for printing conformal materials on component edges at high resolution |
US11691332B2 (en) | 2020-08-05 | 2023-07-04 | Io Tech Group Ltd. | Systems and methods for 3D printing with vacuum assisted laser printing machine |
CN114126248B (zh) * | 2022-01-21 | 2022-05-24 | 深圳原驰三维技术有限公司 | 一种印刷线路板焊盘、线路缺陷修复方法 |
US20240084457A1 (en) * | 2022-09-09 | 2024-03-14 | Hamilton Sundstrand Corporation | Expansive coatings for anchoring to composite substrates |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016116921A1 (en) * | 2015-01-21 | 2016-07-28 | Orbotech Ltd. | Angled lift jetting |
WO2017006306A1 (en) * | 2015-07-09 | 2017-01-12 | Orbotech Ltd | Control of lift ejection angle |
Family Cites Families (154)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3963852A (en) | 1973-08-04 | 1976-06-15 | Moore Business Forms, Inc. | Clay-coated record material of improved image durability |
JPS61260603A (ja) | 1985-05-14 | 1986-11-18 | 三菱電機株式会社 | 電子部品 |
US4752455A (en) | 1986-05-27 | 1988-06-21 | Kms Fusion, Inc. | Pulsed laser microfabrication |
US4891183A (en) | 1986-12-03 | 1990-01-02 | Chrysler Motors Corporation | Method of preparing alloy compositions |
US4970196A (en) | 1987-01-15 | 1990-11-13 | The Johns Hopkins University | Method and apparatus for the thin film deposition of materials with a high power pulsed laser |
US4931323A (en) | 1987-12-10 | 1990-06-05 | Texas Instruments Incorporated | Thick film copper conductor patterning by laser |
US4895735A (en) | 1988-03-01 | 1990-01-23 | Texas Instruments Incorporated | Radiation induced pattern deposition |
US4977038A (en) | 1989-04-14 | 1990-12-11 | Karl Sieradzki | Micro- and nano-porous metallic structures |
US4987006A (en) | 1990-03-26 | 1991-01-22 | Amp Incorporated | Laser transfer deposition |
US5173441A (en) | 1991-02-08 | 1992-12-22 | Micron Technology, Inc. | Laser ablation deposition process for semiconductor manufacture |
JPH04269801A (ja) | 1991-02-25 | 1992-09-25 | Juichiro Ozawa | 抵抗膜作成用材料 |
US5292559A (en) | 1992-01-10 | 1994-03-08 | Amp Incorporated | Laser transfer process |
JPH0634283A (ja) | 1992-06-16 | 1994-02-08 | Ishikawajima Harima Heavy Ind Co Ltd | 宇宙用熱交換器の製作方法 |
US5420611A (en) | 1992-06-29 | 1995-05-30 | Eastman Kodak Company | Apparatus and method for eliminating feedback noise in laser thermal printing |
DE4232373A1 (de) | 1992-09-03 | 1994-03-10 | Deutsche Forsch Luft Raumfahrt | Verfahren zum Auftragen strukturierter Schichten |
DE4229399C2 (de) | 1992-09-03 | 1999-05-27 | Deutsch Zentr Luft & Raumfahrt | Verfahren und Vorrichtung zum Herstellen einer Funktionsstruktur eines Halbleiterbauelements |
US5308737A (en) | 1993-03-18 | 1994-05-03 | Minnesota Mining And Manufacturing Company | Laser propulsion transfer using black metal coated substrates |
US5683601A (en) | 1994-10-24 | 1997-11-04 | Panasonic Technologies, Inc. | Laser ablation forward metal deposition with electrostatic assisted bonding |
JP3531874B2 (ja) | 1994-11-04 | 2004-05-31 | アンドリュー・コーポレイション | アンテナ制御システム |
US5935758A (en) | 1995-04-20 | 1999-08-10 | Imation Corp. | Laser induced film transfer system |
WO1998041189A1 (en) | 1997-03-20 | 1998-09-24 | Therics, Inc. | Fabrication of tissue products using a mold formed by solid free-form methods |
US6025110A (en) | 1997-09-18 | 2000-02-15 | Nowak; Michael T. | Method and apparatus for generating three-dimensional objects using ablation transfer |
US6159832A (en) | 1998-03-18 | 2000-12-12 | Mayer; Frederick J. | Precision laser metallization |
JP3871096B2 (ja) | 1998-05-21 | 2007-01-24 | 株式会社ティラド | 蒸発器、吸収器および過冷却器の組合せ一体型熱交換器と、その製造方法 |
US6155330A (en) | 1998-11-04 | 2000-12-05 | Visteon Global Technologies, Inc. | Method of spray forming metal deposits using a metallic spray forming pattern |
US6805918B2 (en) | 1999-01-27 | 2004-10-19 | The United States Of America As Represented By The Secretary Of The Navy | Laser forward transfer of rheological systems |
US6815015B2 (en) | 1999-01-27 | 2004-11-09 | The United States Of America As Represented By The Secretary Of The Navy | Jetting behavior in the laser forward transfer of rheological systems |
US6177151B1 (en) | 1999-01-27 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Matrix assisted pulsed laser evaporation direct write |
US6348295B1 (en) | 1999-03-26 | 2002-02-19 | Massachusetts Institute Of Technology | Methods for manufacturing electronic and electromechanical elements and devices by thin-film deposition and imaging |
AU5266900A (en) | 1999-05-24 | 2000-12-12 | Potomac Photonics, Inc. | Apparatus for fabrication of miniature structures |
US6792326B1 (en) | 1999-05-24 | 2004-09-14 | Potomac Photonics, Inc. | Material delivery system for miniature structure fabrication |
US6440503B1 (en) | 2000-02-25 | 2002-08-27 | Scimed Life Systems, Inc. | Laser deposition of elements onto medical devices |
US6649861B2 (en) | 2000-05-24 | 2003-11-18 | Potomac Photonics, Inc. | Method and apparatus for fabrication of miniature structures |
US8741194B1 (en) | 2000-09-25 | 2014-06-03 | Voxeljet Ag | Method for producing a part using a depostion technique |
DE10062683A1 (de) | 2000-12-15 | 2002-06-20 | Heidelberger Druckmasch Ag | Mehrstrahl-Abtastvorrichtung |
US6412143B1 (en) | 2001-01-08 | 2002-07-02 | Cheng-Lu Chen | Structure of material for forming a stop at an end of lashing string |
US7087200B2 (en) | 2001-06-22 | 2006-08-08 | The Regents Of The University Of Michigan | Controlled local/global and micro/macro-porous 3D plastic, polymer and ceramic/cement composite scaffold fabrication and applications thereof |
GB2379083A (en) | 2001-08-20 | 2003-02-26 | Seiko Epson Corp | Inkjet printing on a substrate using two immiscible liquids |
CN1311720C (zh) | 2001-09-11 | 2007-04-18 | 大研化学工业株式会社 | 在包括电路基板的物体表面上形成图象方法 |
SG122749A1 (en) | 2001-10-16 | 2006-06-29 | Inst Data Storage | Method of laser marking and apparatus therefor |
GR1004059B (el) | 2001-12-31 | 2002-11-15 | Ιωαννα Ζεργιωτη | Κατασκευη βιοπολυμερικων σχηματων μεσω εναποθεσης με λειζερ. |
US7188492B2 (en) | 2002-01-18 | 2007-03-13 | Linde Aktiengesellschaft | Plate heat exchanger |
DE10210146A1 (de) | 2002-03-07 | 2003-09-25 | Aurentum Innovationstechnologi | Qualitätsdruckverfahren und Druckmaschine sowie Drucksbustanz hierfür |
US7316748B2 (en) | 2002-04-24 | 2008-01-08 | Wisconsin Alumni Research Foundation | Apparatus and method of dispensing small-scale powders |
DE10237732B4 (de) | 2002-08-17 | 2004-08-26 | BLZ Bayerisches Laserzentrum Gemeinnützige Forschungsgesellschaft mbH | Laserstrahlmarkierungsverfahren sowie Markierungsvorrichtung zur Laserstrahlmarkierung eines Zielsubstrats |
US6921626B2 (en) | 2003-03-27 | 2005-07-26 | Kodak Polychrome Graphics Llc | Nanopastes as patterning compositions for electronic parts |
US6873398B2 (en) | 2003-05-21 | 2005-03-29 | Esko-Graphics A/S | Method and apparatus for multi-track imaging using single-mode beams and diffraction-limited optics |
US6899988B2 (en) | 2003-06-13 | 2005-05-31 | Kodak Polychrome Graphics Llc | Laser thermal metallic donors |
US7277770B2 (en) | 2003-07-15 | 2007-10-02 | Huang Wen C | Direct write process and apparatus |
US7682970B2 (en) | 2003-07-16 | 2010-03-23 | The Regents Of The University Of California | Maskless nanofabrication of electronic components |
US7423286B2 (en) | 2003-09-05 | 2008-09-09 | Si2 Technologies, Inc. | Laser transfer article and method of making |
US7521651B2 (en) | 2003-09-12 | 2009-04-21 | Orbotech Ltd | Multiple beam micro-machining system and method |
US20050095367A1 (en) | 2003-10-31 | 2005-05-05 | Babiarz Alec J. | Method of noncontact dispensing of viscous material |
US7540996B2 (en) | 2003-11-21 | 2009-06-02 | The Boeing Company | Laser sintered titanium alloy and direct metal fabrication method of making the same |
US7294449B1 (en) | 2003-12-31 | 2007-11-13 | Kovio, Inc. | Radiation patternable functional materials, methods of their use, and structures formed therefrom |
US8217381B2 (en) | 2004-06-04 | 2012-07-10 | The Board Of Trustees Of The University Of Illinois | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
EP2650905B1 (en) | 2004-06-04 | 2022-11-09 | The Board of Trustees of the University of Illinois | Methods and devices for fabricating and assembling printable semiconductor elements |
US7799699B2 (en) | 2004-06-04 | 2010-09-21 | The Board Of Trustees Of The University Of Illinois | Printable semiconductor structures and related methods of making and assembling |
US7236334B2 (en) | 2004-08-31 | 2007-06-26 | Hitachi Global Storage Technologies Netherlands B.V. | Repeatable ESD protection utilizing a process for unshorting a first shorting material between electrical pads and reshorting by recreating the short |
WO2006033822A2 (en) | 2004-09-07 | 2006-03-30 | Massachusetts Institute Of Technology | Fabrication of electronic and photonic systems on flexible substrates by layer transfer method |
US8216931B2 (en) | 2005-03-31 | 2012-07-10 | Gang Zhang | Methods for forming multi-layer three-dimensional structures |
US7358169B2 (en) | 2005-04-13 | 2008-04-15 | Hewlett-Packard Development Company, L.P. | Laser-assisted deposition |
US7396631B2 (en) | 2005-10-07 | 2008-07-08 | 3M Innovative Properties Company | Radiation curable thermal transfer elements |
US7784173B2 (en) | 2005-12-27 | 2010-08-31 | Palo Alto Research Center Incorporated | Producing layered structures using printing |
US9327056B2 (en) | 2006-02-14 | 2016-05-03 | Washington State University | Bone replacement materials |
US20070224235A1 (en) | 2006-03-24 | 2007-09-27 | Barron Tenney | Medical devices having nanoporous coatings for controlled therapeutic agent delivery |
US7608308B2 (en) | 2006-04-17 | 2009-10-27 | Imra America, Inc. | P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates |
TWI431380B (zh) | 2006-05-12 | 2014-03-21 | Photon Dynamics Inc | 沉積修復設備及方法 |
TWI348338B (en) | 2006-05-24 | 2011-09-01 | Unimicron Technology Corp | Method for repairing the circuitry of circuit board |
US20080006966A1 (en) | 2006-07-07 | 2008-01-10 | Stratasys, Inc. | Method for building three-dimensional objects containing metal parts |
US7569832B2 (en) | 2006-07-14 | 2009-08-04 | Carestream Health, Inc. | Dual-screen digital radiographic imaging detector array |
WO2008014519A2 (en) | 2006-07-28 | 2008-01-31 | Microcontinuum, Inc. | Addressable flexible patterns |
US7935242B2 (en) | 2006-08-21 | 2011-05-03 | Micron Technology, Inc. | Method of selectively removing conductive material |
US20080099515A1 (en) | 2006-10-11 | 2008-05-01 | Nordson Corporation | Thin line conformal coating apparatus and method |
US8420978B2 (en) | 2007-01-18 | 2013-04-16 | The Board Of Trustees Of The University Of Illinois | High throughput, low cost dual-mode patterning method for large area substrates |
US20080233291A1 (en) | 2007-03-23 | 2008-09-25 | Chandrasekaran Casey K | Method for depositing an inorganic layer to a thermal transfer layer |
US10231344B2 (en) | 2007-05-18 | 2019-03-12 | Applied Nanotech Holdings, Inc. | Metallic ink |
WO2008157666A1 (en) | 2007-06-19 | 2008-12-24 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Sub-micron laser direct write |
WO2009018340A2 (en) | 2007-07-31 | 2009-02-05 | Boston Scientific Scimed, Inc. | Medical device coating by laser cladding |
US20090061112A1 (en) | 2007-08-27 | 2009-03-05 | Mu-Gahat Enterprises, Llc | Laser circuit etching by subtractive deposition |
US20090068790A1 (en) * | 2007-09-07 | 2009-03-12 | Vertical Circuits, Inc. | Electrical Interconnect Formed by Pulsed Dispense |
US8728589B2 (en) | 2007-09-14 | 2014-05-20 | Photon Dynamics, Inc. | Laser decal transfer of electronic materials |
US7534544B2 (en) | 2007-10-19 | 2009-05-19 | E.I. Du Pont De Nemours And Company | Method of separating an exposed thermal transfer assemblage |
GB2453774B (en) | 2007-10-19 | 2013-02-20 | Materials Solutions | A method of making an article |
US20090130427A1 (en) | 2007-10-22 | 2009-05-21 | The Regents Of The University Of California | Nanomaterial facilitated laser transfer |
US7938855B2 (en) | 2007-11-02 | 2011-05-10 | Boston Scientific Scimed, Inc. | Deformable underlayer for stent |
DE102007055019B4 (de) | 2007-11-14 | 2019-04-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen einer nanoporösen Schicht |
TWI375498B (en) | 2007-11-21 | 2012-10-21 | Ind Tech Res Inst | High perfromance laser-assisted transferring system and transfer component |
TW200945339A (en) | 2007-12-19 | 2009-11-01 | Koninkl Philips Electronics Nv | Optical disk format for direct writing materials on a substrate |
CN101910787B (zh) | 2008-01-10 | 2013-03-13 | 以色列商奥宝科技股份有限公司 | 光学系统及校准多个选择性引导面镜的方法 |
US8056222B2 (en) | 2008-02-20 | 2011-11-15 | The United States Of America, As Represented By The Secretary Of The Navy | Laser-based technique for the transfer and embedding of electronic components and devices |
US8215371B2 (en) | 2008-04-18 | 2012-07-10 | Stratasys, Inc. | Digital manufacturing with amorphous metallic alloys |
US20110089412A1 (en) | 2008-06-16 | 2011-04-21 | Shigeo Fujimori | Patterning method, production method of device using the patterning method, and device |
EP2294240B1 (en) | 2008-06-19 | 2017-03-08 | Utilight Ltd. | Light induced patterning |
US7942987B2 (en) | 2008-06-24 | 2011-05-17 | Stratasys, Inc. | System and method for building three-dimensional objects with metal-based alloys |
JP2011529126A (ja) | 2008-07-24 | 2011-12-01 | コヴィオ インコーポレイテッド | アルミニウムインク及びその製造方法、アルミニウムインクを堆積する方法、並びにアルミニウムインクの印刷及び/又は堆積により形成されたフィルム |
US20100021638A1 (en) | 2008-07-28 | 2010-01-28 | Solidscape, Inc. | Method for fabricating three dimensional models |
CN102203674B (zh) | 2008-09-22 | 2015-08-12 | Asml荷兰有限公司 | 光刻设备、可编程图案形成装置和光刻方法 |
JP2010098526A (ja) | 2008-10-16 | 2010-04-30 | Sony Corp | 受信装置、コンテンツ受信方法、およびプログラム |
IL197349A0 (en) | 2009-03-02 | 2009-12-24 | Orbotech Ltd | A method and system for electrical circuit repair |
US8663754B2 (en) | 2009-03-09 | 2014-03-04 | Imra America, Inc. | Pulsed laser micro-deposition pattern formation |
US20120025182A1 (en) | 2009-04-03 | 2012-02-02 | Sharp Kabushiki Kaisha | Donor substrate, process for production of transfer film, and process for production of organic electroluminescent element |
DE102009020774B4 (de) | 2009-05-05 | 2011-01-05 | Universität Stuttgart | Verfahren zum Kontaktieren eines Halbleitersubstrates |
US8262916B1 (en) | 2009-06-30 | 2012-09-11 | Microfabrica Inc. | Enhanced methods for at least partial in situ release of sacrificial material from cavities or channels and/or sealing of etching holes during fabrication of multi-layer microscale or millimeter-scale complex three-dimensional structures |
US8129088B2 (en) | 2009-07-02 | 2012-03-06 | E.I. Du Pont De Nemours And Company | Electrode and method for manufacturing the same |
US20110136162A1 (en) | 2009-08-31 | 2011-06-09 | Drexel University | Compositions and Methods for Functionalized Patterning of Tissue Engineering Substrates Including Bioprinting Cell-Laden Constructs for Multicompartment Tissue Chambers |
US8743165B2 (en) | 2010-03-05 | 2014-06-03 | Micronic Laser Systems Ab | Methods and device for laser processing |
EP2556015B1 (en) | 2010-04-09 | 2016-08-10 | Frank Niklaus | Free form printing of silicon micro- and nanostructures |
GB201009847D0 (en) | 2010-06-11 | 2010-07-21 | Dzp Technologies Ltd | Deposition method, apparatus, printed object and uses |
KR101114256B1 (ko) | 2010-07-14 | 2012-03-05 | 한국과학기술원 | 패턴 제조 방법 |
GB201019579D0 (en) | 2010-11-19 | 2010-12-29 | Lingvitae Holding As | Method and apparatus for direct writing |
JP2012190877A (ja) | 2011-03-09 | 2012-10-04 | Fujifilm Corp | ナノインプリント方法およびそれに用いられるナノインプリント装置 |
TW201238738A (en) | 2011-03-25 | 2012-10-01 | Hon Hai Prec Ind Co Ltd | Products shell manufacturing method and structure |
US20120247740A1 (en) | 2011-03-31 | 2012-10-04 | Denso International America, Inc. | Nested heat exchangers |
US8815345B2 (en) | 2011-05-26 | 2014-08-26 | Solidscape, Inc. | Method for fabricating three dimensional models |
KR101982887B1 (ko) | 2011-07-13 | 2019-05-27 | 누보트로닉스, 인크. | 전자 및 기계 구조체들을 제조하는 방법들 |
US9034674B2 (en) | 2011-08-08 | 2015-05-19 | Quarkstar Llc | Method and apparatus for coupling light-emitting elements with light-converting material |
JP5753320B2 (ja) | 2011-08-16 | 2015-07-22 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
WO2013037838A1 (en) | 2011-09-12 | 2013-03-21 | Farma Grs, D.O.O. | Polymorphic form of pitavastatin calcium |
RU2539135C2 (ru) | 2012-02-27 | 2015-01-10 | Юрий Александрович Чивель | Способ получения объемных изделий из порошков и устройство для его осуществления |
DE102012003866B4 (de) | 2012-02-23 | 2013-07-25 | Universität Stuttgart | Verfahren zum Kontaktieren eines Halbleitersubstrates, insbesondere zum Kontaktieren von Solarzellen, sowie Solarzellen |
KR101650830B1 (ko) | 2012-02-23 | 2016-08-24 | 에이에스엠엘 네델란즈 비.브이. | 디바이스, 리소그래피 장치, 방사선을 안내하는 방법, 및 디바이스 제조 방법 |
EP2660352A1 (en) | 2012-05-02 | 2013-11-06 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Donor sheet and method for light induced forward transfer manufacturing |
US20150207050A1 (en) * | 2012-05-08 | 2015-07-23 | Fuji Machine Mfg Co., Ltd. | Semiconductor package and manufacturing method thereof |
GB2501918B (en) | 2012-05-11 | 2014-06-18 | Rolls Royce Plc | Casing |
US9044805B2 (en) | 2012-05-16 | 2015-06-02 | Apple Inc. | Layer-by-layer construction with bulk metallic glasses |
US9943996B2 (en) | 2012-05-22 | 2018-04-17 | University Of Southern California | Process planning of meniscus shapes for fabricating smooth surfaces in mask image projection based additive manufacturing |
US9090095B2 (en) | 2012-06-04 | 2015-07-28 | Micronic Mydata AB | Optical writer for flexible foils |
US11376349B2 (en) | 2012-10-05 | 2022-07-05 | University of Pittsburgh—of the Commonwealth System of Higher Education | Biodegradable iron-containing compositions, methods of preparing and applications therefor |
EP2909034A4 (en) | 2012-10-21 | 2017-11-29 | Photon Jet Ltd. | A multi-technology printing system |
ES2471568B1 (es) | 2012-11-22 | 2015-08-21 | Abengoa Solar New Technologies S.A. | Procedimiento para la creación de contactos eléctricos y contactos así creados |
BR112015017976A2 (pt) | 2013-02-12 | 2017-07-11 | Carbon3D Inc | impressão de interfase líquida contínua |
TWI636717B (zh) | 2013-02-18 | 2018-09-21 | 奧寶科技有限公司 | 兩步驟直接寫入之雷射金屬化 |
US9249015B2 (en) | 2013-02-27 | 2016-02-02 | International Business Machines Corporation | Mold for forming complex 3D MEMS components |
US9192999B2 (en) | 2013-07-01 | 2015-11-24 | General Electric Company | Methods and systems for electrochemical machining of an additively manufactured component |
US20150024317A1 (en) | 2013-07-17 | 2015-01-22 | Stratasys, Inc. | High-Performance Consumable Materials for Electrophotography-Based Additive Manufacturing |
US9023566B2 (en) | 2013-07-17 | 2015-05-05 | Stratasys, Inc. | ABS part material for electrophotography-based additive manufacturing |
US9029058B2 (en) | 2013-07-17 | 2015-05-12 | Stratasys, Inc. | Soluble support material for electrophotography-based additive manufacturing |
JP6619335B2 (ja) | 2013-10-14 | 2019-12-11 | オルボテック リミテッド | 複数組成材料構造体のlift印刷 |
JP6665386B2 (ja) | 2013-12-15 | 2020-03-13 | オーボテック リミテッド | プリント回路配線の修復 |
US20150197063A1 (en) | 2014-01-12 | 2015-07-16 | Zohar SHINAR | Device, method, and system of three-dimensional printing |
US9920433B2 (en) | 2014-01-13 | 2018-03-20 | Incodema3D, LLC | Additive metal deposition process |
US9840789B2 (en) | 2014-01-20 | 2017-12-12 | City University Of Hong Kong | Etching in the presence of alternating voltage profile and resulting porous structure |
JP6635313B2 (ja) | 2014-04-10 | 2020-01-22 | オーボテック リミテッド | パルスモードのレーザ直接描画によるメタライゼーション |
CN106414791A (zh) | 2014-05-27 | 2017-02-15 | 奥博泰克有限公司 | 藉由激光诱发正向转印以印刷三维结构 |
US9925797B2 (en) | 2014-08-07 | 2018-03-27 | Orbotech Ltd. | Lift printing system |
US10193004B2 (en) | 2014-10-19 | 2019-01-29 | Orbotech Ltd. | LIFT printing of conductive traces onto a semiconductor substrate |
CN107208256B (zh) | 2015-01-19 | 2020-08-11 | 奥博泰克有限公司 | 使用牺牲支持体的三维金属结构体的打印 |
US9887356B2 (en) | 2015-01-23 | 2018-02-06 | The Trustees Of Princeton University | 3D printed active electronic materials and devices |
CN107532275B (zh) | 2015-02-05 | 2019-09-13 | 迈康尼股份公司 | 用于激光诱导向前转移且高产量的重复方法、以及通过重新使用多个靶基材板或离散供体点图案的向前转移的供体材料回收 |
US9842831B2 (en) * | 2015-05-14 | 2017-12-12 | Mediatek Inc. | Semiconductor package and fabrication method thereof |
US20170021014A1 (en) | 2015-07-21 | 2017-01-26 | The Johns Hopkins University | Vaccine adjuvants for cytomegalovirus prevention and treatment |
EP3166143A1 (fr) | 2015-11-05 | 2017-05-10 | Gemalto Sa | Procede de fabrication d'un dispositif a puce de circuit integre par depot direct de matiere conductrice |
EP3377290B1 (en) | 2015-11-22 | 2023-08-02 | Orbotech Ltd. | Control of surface properties of printed three-dimensional structures |
-
2018
- 2018-02-21 TW TW107105832A patent/TW201901887A/zh unknown
- 2018-04-26 CN CN201880030663.4A patent/CN110637354B/zh active Active
- 2018-04-26 JP JP2019564539A patent/JP2020521331A/ja active Pending
- 2018-04-26 US US16/495,112 patent/US11881466B2/en active Active
- 2018-04-26 WO PCT/IL2018/050455 patent/WO2018216002A1/en active Application Filing
- 2018-04-26 KR KR1020197031853A patent/KR20200010208A/ko unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016116921A1 (en) * | 2015-01-21 | 2016-07-28 | Orbotech Ltd. | Angled lift jetting |
WO2017006306A1 (en) * | 2015-07-09 | 2017-01-12 | Orbotech Ltd | Control of lift ejection angle |
Non-Patent Citations (3)
Title |
---|
Alberto Piqué.Laser Direct-Write of Embedded Electronic Components and Circuits.《Internationale Society for Optics and Photonics》.2005, * |
Laser Direct-Write of Embedded Electronic Components and Circuits;Alberto Piqué;《Internationale Society for Optics and Photonics》;20050401;全文 * |
Laser Direct-Write of Embedded Electronic Components and Circuits;Alberto Pique;Internationale Society for Optics and Photonics;第223-231页 * |
Also Published As
Publication number | Publication date |
---|---|
CN110637354A (zh) | 2019-12-31 |
KR20200010208A (ko) | 2020-01-30 |
US20210028141A1 (en) | 2021-01-28 |
WO2018216002A1 (en) | 2018-11-29 |
US11881466B2 (en) | 2024-01-23 |
JP2020521331A (ja) | 2020-07-16 |
TW201901887A (zh) | 2019-01-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110637354B (zh) | 于未事先图样化的基板上电器互连的电路元件 | |
US9859247B2 (en) | Method for bonding bare chip dies | |
US10688692B2 (en) | Control of surface properties of printed three-dimensional structures | |
KR20170008768A (ko) | 레이저 유도 순방향 전송에 의한 3d 구조의 인쇄 | |
KR20100080120A (ko) | 인쇄회로 소결방법 | |
KR102668012B1 (ko) | 고해상도 솔더링 | |
US20220347778A1 (en) | Laser Printing of Solder Pastes | |
US11627667B2 (en) | High-resolution soldering | |
US20230422402A1 (en) | Lift Printing of Fine Metal Lines | |
JP2023503478A (ja) | 3次元電子製品を製造するための方法及びシステム | |
Lim et al. | Laser microfabrication: present to future applications | |
KR100467589B1 (ko) | 잉크젯 프린트헤드 및 fpc 배선 연결방법 | |
KR20230136621A (ko) | 레이저 시스템에 의한 pcb 생산 | |
CN116830812A (zh) | 利用激光系统进行pcb生产 | |
JP2014236035A (ja) | 回路基板の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: Yani, Israel Applicant after: ORBOTECH Ltd. Address before: Yani, Israel Applicant before: Orbotech Ltd. |
|
CB02 | Change of applicant information | ||
GR01 | Patent grant | ||
GR01 | Patent grant |