CN110634737B - Dressing method of grinding tool and wafer for dressing - Google Patents

Dressing method of grinding tool and wafer for dressing Download PDF

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Publication number
CN110634737B
CN110634737B CN201910531140.4A CN201910531140A CN110634737B CN 110634737 B CN110634737 B CN 110634737B CN 201910531140 A CN201910531140 A CN 201910531140A CN 110634737 B CN110634737 B CN 110634737B
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China
Prior art keywords
grinding
dressing
chuck table
silicon wafer
workpiece
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CN201910531140.4A
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Chinese (zh)
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CN110634737A (en
Inventor
广泽俊一郎
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Disco Corp
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Disco Corp
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12—Dressing tools; Holders therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/02—Devices or means for dressing or conditioning abrasive surfaces of plane surfaces on abrasive tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Provided are a method for dressing a grinding tool and a wafer for dressing, which can reduce the number of wafers used in a dressing operation and can effectively perform the dressing operation of the grinding tool. The dressing method of the grinding tool uses a grinding device having: a chuck table for holding a workpiece by a holding surface; a grinding unit for mounting a grinding wheel having a plurality of grinding tools arranged in a ring shape on a spindle having a rotation axis perpendicular to the holding surface, and grinding a workpiece held by the chuck table; and a grinding feed unit that performs grinding feed in the rotation axis direction of the grinding unit, wherein the grinding feed unit performs grinding feed while rotating the spindle, the workpiece held by the chuck table is ground without rotating the chuck table, and an arc-shaped grinding groove is formed in the front surface of the workpiece.

Description

Dressing method of grinding tool and wafer for dressing
Technical Field
The present invention relates to a dressing method of a grinding tool for dressing a grinding surface of the grinding tool, and a wafer for dressing.
Background
In grinding various plate-shaped workpieces such as semiconductor wafers, grinding wheels are used in which a plurality of grinding tools are annularly arranged on a grinding wheel base. The grinding tool is formed by fixing diamond abrasive grains with a resin bond, a ceramic bond, a metal bond, or the like, and good grinding results are obtained by bringing the abrasive grains into a so-called sharpened state in which they partially protrude from the bond.
Therefore, it is necessary to perform a dressing operation (pre-grinding or pre-cutting) in which the workpiece other than the product is ground before grinding, the binder is consumed, and the abrasive grains are projected, and the dressing operation is used to bring the projected state into a state most suitable for the product.
Since the dressing operation is usually performed by grinding a substance of the same material as the product, for example, when the silicon wafer is the product, the dressing operation is performed by grinding a plurality of debug-level silicon wafers (Dummy silicon wafer).
Patent document 1: japanese patent laid-open No. 2008-221360
However, the following problems exist: when grinding a plurality of debug-level silicon wafers to perform a dressing operation, it is costly to prepare a plurality of debug-level silicon wafers.
Disclosure of Invention
The present invention has been made in view of such a point, and an object thereof is to provide a method for dressing a grinding wheel, which can reduce the number of wafers used in a dressing operation and can effectively perform the dressing operation of the grinding wheel.
According to the invention of claim 1, there is provided a dressing method of a grinding tool, the dressing method of the grinding tool using a grinding device having: a chuck table for holding a workpiece by a holding surface; a grinding unit for mounting a grinding wheel having a plurality of grinding tools arranged in a ring shape on a spindle having a rotation axis perpendicular to the holding surface, and grinding a workpiece held by the chuck table; and a grinding feed unit that performs grinding feed in the rotation axis direction of the grinding unit, wherein the grinding feed unit performs grinding feed while rotating the spindle, the workpiece held by the chuck table is ground without rotating the chuck table, and an arc-shaped grinding groove is formed in the front surface of the workpiece.
Preferably, a plurality of arc-shaped grinding grooves are formed in the workpiece, and the sharpening state of the grinding tool is controlled.
According to the invention of claim 3, there is provided a wafer for dressing a grinding wheel by grinding, wherein the wafer for dressing is formed with one or more arcuate grinding grooves.
According to the method for dressing a grinding tool of the present invention, since the workpiece is ground without rotating the chuck table holding the workpiece, a load applied to the grinding tool is high, and a high dressing effect is obtained even when the grinding volume is small, so that the number of workpieces used in the dressing operation can be reduced. Further, since a plurality of arc-shaped grinding grooves can be formed in one workpiece according to the dressing condition, there is an effect that the amount of dressing grinding can be adjusted without increasing the amount of workpiece used.
Further, since the workpiece used in the dressing method of the present invention has an annular grinding groove, the grinding load is higher than that of a flat workpiece, and therefore, the following effects are also obtained: the present invention can also be used as a workpiece in a normal dressing operation in which a chuck table holding the workpiece is rotated and a grinding tool is ground to perform a dressing operation.
Drawings
Fig. 1 is a perspective view of a grinding apparatus.
Fig. 2 is a partial cross-sectional side view showing the grinding method of the present invention.
Fig. 3 is a schematic top view illustrating the dressing method of the present invention.
Fig. 4 (a) is a top view of a debug-level silicon wafer after forming one circular arc-shaped grinding groove by the dressing method of the present invention, and fig. 4 (B) is a top view of a debug-level silicon wafer after forming a plurality of circular arc-shaped grinding grooves.
Fig. 5 is a partially cross-sectional side view showing a case where a general dressing operation is performed by rotating a chuck table and a grinding wheel together using a debug-level silicon wafer having a plurality of arcuate grinding grooves.
Description of the reference numerals
10: a grinding unit; 11: a debug-level silicon wafer; 13: arc-shaped grinding grooves; 18: a main shaft; 22: a grinding wheel mounting seat; 24: grinding the grinding wheel; 26: a grinding wheel base; 28: grinding tool; 34: a grinding feed unit; 38: chuck table.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Referring to fig. 1, there is shown an external perspective view of a grinding apparatus 2 suitable for carrying out the dressing method of the present invention. Reference numeral 4 denotes a base of the grinding device 2, and a post 6 is erected at the rear of the base 4. A pair of guide rails 8 extending in the up-down direction are fixed to the column 6.
A grinding unit (grinding member) 10 is mounted along the pair of guide rails 8 so as to be movable in the up-down direction. The grinding unit 10 includes a spindle case 12 and a support portion 14 for holding the spindle case 12, and the support portion 14 is attached to a movement base 16 that moves in the up-down direction along a pair of guide rails 8.
The grinding unit 10 includes: a spindle 18 rotatably accommodated in the spindle case 12; a motor 20 for rotationally driving the spindle 18; a grinding wheel mount 22 fixed to the front end of the spindle 18; and a grinding wheel 24 detachably attached to the wheel mount 22.
The grinding device 2 has a grinding feed unit 34, and the grinding feed unit 34 includes a ball screw 30 and a pulse motor 32 that move the grinding unit 10 in the up-down direction along a pair of guide rails 8. When the pulse motor 32 is driven, the ball screw 30 rotates, and the movable base 16 moves in the up-down direction.
A recess 4a is formed in the upper surface of the base 4, and a chuck table mechanism 36 is disposed in the recess 4 a. The chuck table mechanism 36 has a chuck table 38, and is moved in the Y-axis direction between a wafer loading/unloading position a and a grinding position B opposed to the grinding unit 10 by a not-shown moving mechanism. 40. 42 are corrugations. An operation panel 44 for inputting grinding conditions and the like by an operator of the grinding apparatus 2 is disposed on the front side of the base 4.
Referring to fig. 2, a partial cross-sectional side view showing a case where the dressing method of the grinding wheel 28 is performed by the method of the present invention using the debug grade silicon wafer 11 having no LSI or other device formed on the front surface thereof as a workpiece is shown.
The chuck table 38 holds the debug-level silicon wafer 11 by a holding surface, and the grinding wheel 24 detachably attached to the wheel mount 22 includes an annular wheel base 26 and a plurality of grinding tools 28 attached to the lower end of the wheel base 26 in an annular shape. The grinding tool 28 is formed by fixing diamond abrasive grains with a resin bond, a ceramic bond, a metal bond, or the like.
The spindle 18 rotates about a rotational axis that is perpendicular to the holding surface of the chuck table 38. The grinding feed unit 34 performs grinding feed of the grinding unit 10 in the rotation axis direction of the spindle 18.
The dressing method of the grinding tool according to the present invention grinds the debug grade silicon wafer 11 held by the chuck table 38 by feeding the grinding unit 10 in the arrow Z direction by the grinding feeding unit 34 while rotating the spindle 18 in the arrow b direction, for example, 6000rpm, without rotating the chuck table 38 holding the debug grade silicon wafer 11. That is, in the dressing method of the grinding tool of the present invention, the dressing operation of the grinding tool 28 is performed without rotating the chuck table 38.
Fig. 3 is a top view schematically illustrating a dressing method of the grinding tool of the present invention. In the dressing method of the grinding wheel of the present invention, the grinding wheel 24 is rotated only in the arrow b direction without rotating the chuck table 38, and the dressing of the grinding wheel 28 is performed by grinding the debug silicon wafer 11, so that the arc-shaped grinding groove 13 is formed in the debug silicon wafer 11.
Since the sharpening of the grinding wheel 28 is performed by grinding without rotating the tuning-stage silicon wafer 11, the load applied to the grinding wheel 28 is high, and a high sharpening effect can be obtained even if the grinding volume of the tuning-stage silicon wafer 11 is small. Therefore, the number of pieces of the debug grade silicon wafer 11 used in the dressing operation of the grinding wheel 28 can be reduced.
Fig. 4 (a) is a plan view of the debug-level silicon wafer 11 after the dressing operation of the grinding wheel 28 is performed to form a single circular arc-shaped grinding groove 13. In this way, since only one arc-shaped grinding groove 13 is formed in one dressing operation of the grinding wheel 28, the chuck table 38 holding the debug-level silicon wafer 11 is slightly rotated in the circumferential direction, and the dressing operation of the grinding wheel 28 can be performed a plurality of times.
That is, since a plurality of arcuate grinding grooves 13 can be formed in one silicon wafer 11 of the dressing stage as shown in fig. 4 (B) according to the dressing condition of the grinding wheel 28, the amount of dressing grinding can be adjusted without increasing the amount of use of the silicon wafer 11 of the dressing stage. Fig. 4 (B) is a plan view of the debug silicon wafer 11 after a plurality of arcuate grinding grooves 13 are formed in one debug silicon wafer 11.
The debugging-stage silicon wafer 11 used in the dressing method of the grinding tool of the present invention is formed with one or more circular arc-shaped grinding grooves 13, and the front surface becomes uneven. Therefore, since the grinding wheel performs grinding while colliding with the front surface irregularities at a high speed, the grinding load is higher than that of grinding the flat debug-level silicon wafer 11, and thus the grinding wheel can be used as a conventional wafer for dressing by which the grinding wheel 28 is dressed while rotating the chuck table 38 together with the grinding wheel 24.
Referring to fig. 5, a partial cross-sectional side view of a case where a dressing operation of a conventional method is performed using a debugging-level silicon wafer 1 in which a plurality of arcuate grinding grooves 13 are formed is shown.
In this conventional dressing method, the grinding of the wafer 11 at the debug level is performed by rotating the chuck table 38, which attracts and holds the wafer 11 at the debug level, in which the plurality of arc-shaped grinding grooves 13 are formed, in the arrow a direction at 300rpm, for example, and rotating the grinding wheel 24 in the arrow b direction at 6000rpm, for example, and grinding and feeding the grinding wheel 34 in the arrow Z direction by the grinding and feeding means 34.
Since the plurality of arc-shaped grinding grooves 13 are formed in the tuning-grade silicon wafer 11, the grinding load is higher than that of a flat wafer, and therefore the dressing operation of the grinding wheel 28 can be effectively performed. In addition, since the grinding load is high, the grinding tool is consumed more, and in addition to dressing, in dressing by grinding a dressing plate including abrasive grains in general, a debugging-grade silicon wafer 1 having a plurality of arc-shaped grinding grooves 13 formed therein can be used instead of the dressing plate.
In the above-described embodiment, since the case where the silicon wafer is used as the workpiece to be ground by the grinding device 2 has been described, the dressing work of the grinding wheel 28 is performed using a debugging-grade silicon wafer, but when the workpiece to be ground is made of another material, it is preferable to use the same material as the workpiece to be ground as the wafer for dressing.

Claims (2)

1. A dressing method of a grinding tool uses a grinding device having: a chuck table for holding a debug-level silicon wafer by a holding surface; a grinding unit for mounting a grinding wheel having a plurality of grinding tools arranged in a ring shape on a spindle having a rotation axis perpendicular to the holding surface, and grinding the debug-level silicon wafer held by the chuck table; and a grinding feed unit that performs grinding feed of the grinding unit in the rotation axis direction, the dressing method of the grinding tool being characterized in that,
the grinding means is fed while rotating the spindle, the debugging-stage silicon wafer held by the chuck table is ground without rotating the chuck table, and an arc-shaped grinding groove is formed in the front surface of the debugging-stage silicon wafer.
2. The method for dressing a grinding tool according to claim 1, wherein,
and forming a plurality of arc-shaped grinding grooves on the debugging-grade silicon wafer, and controlling the dressing state of the grinding tool.
CN201910531140.4A 2018-06-22 2019-06-19 Dressing method of grinding tool and wafer for dressing Active CN110634737B (en)

Applications Claiming Priority (2)

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JP2018-118723 2018-06-22
JP2018118723A JP7154690B2 (en) 2018-06-22 2018-06-22 Grinding wheel dressing method

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CN110634737A CN110634737A (en) 2019-12-31
CN110634737B true CN110634737B (en) 2024-03-19

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KR (1) KR102708811B1 (en)
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TW (1) TWI799605B (en)

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JP2002164312A (en) * 2000-11-27 2002-06-07 Sony Corp Reverse side-grinding method and apparatus
JP2005340431A (en) * 2004-05-26 2005-12-08 Renesas Technology Corp Method for manufacturing semiconductor device
JP2006015423A (en) * 2004-06-30 2006-01-19 Disco Abrasive Syst Ltd Setting method for vitrified bond grinding wheel and setting board
JP2008207302A (en) * 2007-02-28 2008-09-11 Disco Abrasive Syst Ltd Grinding wheel dressing method and dressing tool
JP2008221360A (en) * 2007-03-09 2008-09-25 Disco Abrasive Syst Ltd Dressing method and dresser board
CN105390413A (en) * 2014-08-27 2016-03-09 株式会社迪思科 Grinding device
JP2017154238A (en) * 2016-03-04 2017-09-07 株式会社ディスコ Grinding device
CN107914215A (en) * 2016-10-05 2018-04-17 株式会社迪思科 It is ground the dressing method of grinding tool
JP2018065236A (en) * 2016-10-21 2018-04-26 株式会社ディスコ Dressing board and method of application thereof

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JP3170113B2 (en) * 1993-09-27 2001-05-28 トーヨーエイテック株式会社 Method and apparatus for dressing grindstone of grinder
JPH0929628A (en) * 1995-07-18 1997-02-04 Amada Washino Co Ltd Measuring method and device for shape of grinding wheel of grinding device, and machining method using the method
JP4488581B2 (en) * 2000-04-07 2010-06-23 株式会社ディスコ Grinding equipment
US7163441B2 (en) * 2004-02-05 2007-01-16 Robert Gerber Semiconductor wafer grinder
JP2015202545A (en) * 2014-04-16 2015-11-16 株式会社ディスコ Grinding device
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JP6270921B2 (en) * 2016-06-28 2018-01-31 株式会社リード Cutting device with blade dressing mechanism

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002164312A (en) * 2000-11-27 2002-06-07 Sony Corp Reverse side-grinding method and apparatus
JP2005340431A (en) * 2004-05-26 2005-12-08 Renesas Technology Corp Method for manufacturing semiconductor device
JP2006015423A (en) * 2004-06-30 2006-01-19 Disco Abrasive Syst Ltd Setting method for vitrified bond grinding wheel and setting board
JP2008207302A (en) * 2007-02-28 2008-09-11 Disco Abrasive Syst Ltd Grinding wheel dressing method and dressing tool
JP2008221360A (en) * 2007-03-09 2008-09-25 Disco Abrasive Syst Ltd Dressing method and dresser board
CN105390413A (en) * 2014-08-27 2016-03-09 株式会社迪思科 Grinding device
JP2017154238A (en) * 2016-03-04 2017-09-07 株式会社ディスコ Grinding device
CN107914215A (en) * 2016-10-05 2018-04-17 株式会社迪思科 It is ground the dressing method of grinding tool
JP2018065236A (en) * 2016-10-21 2018-04-26 株式会社ディスコ Dressing board and method of application thereof

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Publication number Publication date
JP2019217611A (en) 2019-12-26
KR20200000338A (en) 2020-01-02
TWI799605B (en) 2023-04-21
JP7154690B2 (en) 2022-10-18
TW202000372A (en) 2020-01-01
KR102708811B1 (en) 2024-09-23
CN110634737A (en) 2019-12-31

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