CN110620119A - 阵列基板及其制备方法 - Google Patents

阵列基板及其制备方法 Download PDF

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Publication number
CN110620119A
CN110620119A CN201910788560.0A CN201910788560A CN110620119A CN 110620119 A CN110620119 A CN 110620119A CN 201910788560 A CN201910788560 A CN 201910788560A CN 110620119 A CN110620119 A CN 110620119A
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China
Prior art keywords
layer
active layer
display driving
insulating layer
substrate
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CN201910788560.0A
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English (en)
Inventor
罗成志
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to CN201910788560.0A priority Critical patent/CN110620119A/zh
Priority to US16/772,834 priority patent/US20210126022A1/en
Priority to PCT/CN2019/117648 priority patent/WO2021035973A1/zh
Publication of CN110620119A publication Critical patent/CN110620119A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Abstract

本发明提供了一种阵列基板及其制备方法，通过在基板上设计混合TFT，在显示驱动区设置氧化物TFT且在非显示驱动区设置低温多晶硅TFT，这样既能提高LCD栅极驱动电路中的驱动电流，并且降低LCD显示像素驱动时的漏电流。在制备混合TFT的结构时，通过将显示驱动区域的第二有源层设于第一有源层上，且中间设置半导体绝缘层，进而在进行刻蚀的时候，可以通过一个光罩刻蚀出第一有源层与第二有源层的图案，进而可以降低制备成本。

Description

阵列基板及其制备方法
技术领域
本发明涉及显示技术领域，特别是一种阵列基板及其制备方法。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
薄膜晶体管(Thin Film Transistor，TFT)是LCD显示装置中的主要驱动元件，直接关系到高性能平板显示装置的发展方向。显示装置所用TFT需要考虑均一性、漏电流、有效驱动长度、面积效率、及滞后作用等多方面的因素。依据有源层材料的不同，TFT分为非晶硅(a-Si)TFT、低温多晶硅(Low Temperature Poly-silicon，LTPS)TFT、及金属氧化物(Metal Oxide)TFT。其中LTPS TFT具有迁移率高，尺寸较小，充电快开关速度快等优点，用于栅极驱动时具有很好的效果；而金属氧化物TFT具有均一性良好及漏电流低的优点，可用于显示像素驱动。因此，可以制备一种用LTPS TFT做栅极驱动和用金属氧化物TFT做显示像素驱动的混合TFT，这样既能提高LCD栅极驱动电路中的驱动电流，并且降低LCD显示像素驱动时的漏电流。目前常用的混合TFT有LTPS与铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)TFT。如图1以及图2所示，这是两种不同结构的LTPS与IGZO混合的TFT结构，其区别是图1中的低温多晶硅11与金属氧化物12在同一平面，且混合TFT是顶栅结构，图2中低温多晶硅11a与金属氧化物12a不在同一平面，混合TFT是底栅结构。在制作图1以及图2结构时，在制备LTPS与IGZO混合TFT时都需要在原有的成本上增加一张形成IGZO有源层图案的光罩，由此增加制程复杂度，提高成本。
因此，有必要提供一种阵列基板及其制备方法，可以有效的减少混合TFT制程中光罩的数量，进而降低成本。
发明内容
本发明所要解决的技术问题是，本发明提供了一种阵列基板及其制备方法，在制备混合TFT的结构时，通过将显示驱动区域的第二有源层设于第一有源层上，且中间设置半导体绝缘层，进而在进行刻蚀的时候，可以通过一个光罩刻蚀出第一有源层与第二有源层的图案，进而可以降低制备成本。
为解决上述问题，本发明提供一种阵列基板，具有显示驱动区以及非显示驱动区，所述阵列基板包括：基板；缓冲层，设于所述基板上；第一有源层，设于所述缓冲层远离所述基板的一侧；半导体绝缘层，设于所述显示驱动区的第一有源层上；第二有源层，设于所述显示驱动区的半导体绝缘层上；栅极绝缘层，设于所述第一有源层、所述基板以及所述第二有源层上；栅极，设于所述栅极绝缘层上；层间绝缘层，设于所述栅极以及所述栅极绝缘层上；源漏极金属层，设于所述层间绝缘层上；其中，在所述显示驱动区，所述源漏极金属层通过第一通孔连接所述第二有源层；在所述非显示驱动区，所述源漏极金属层通过第二通孔连接所述第一有源层。
进一步地，所述第一通孔贯穿所述层间绝缘层及部分栅极绝缘层直至所述第二有源层。
进一步地，所述第二通孔贯穿所述层间绝缘层及部分栅极绝缘层直至所述第一有源层。
进一步地，所述第一有源层的材料为低温多晶硅。
进一步地，所述第二有源层的材料为铟镓锌氧化物。
进一步地，所述缓冲层的材料包括氮化硅及氧化硅。
进一步地，所述源漏极金属层包括源极走线以及漏级走线。
进一步地，在所述显示驱动区，所述源极走线和所述漏级走线连接所述第二有源层；在所述非显示驱动区，所述源极走线和所述漏级走线连接所述第一有源层。
本发明还提供一种阵列基板的制备方法，包括如下步骤：提供一基板，所述基板具有显示驱动区以及非显示驱动区；在所述基板上依次沉积缓冲层以及非晶硅层；激光退火所述非晶硅层形成第一有源层；在所述显示驱动区依次沉积半导体绝缘层及第二有源层于所述第一有源层上；形成一光刻胶层于所述第一有源层以及所述第二有源层上并曝光显影形成一图案层；刻蚀所述第一有源层、所述半导体绝缘层及所述第二有源层形成相应的图案，并移除图案层；形成一栅极绝缘层于所述基板、所述第一有源层及所述第二有源层上；以及依次沉积栅极、层间绝缘层及源漏极金属层于所述栅极绝缘层上。
进一步地，在刻蚀所述第一有源层、所述半导体绝缘层及所述第二有源层形成相应的图案的步骤中，在所述显示驱动区，所述刻蚀的方法为湿法刻蚀；在所述非显示驱动区，所述刻蚀的方法为干法刻蚀。
本发明的有益效果是：本发明提供了一种阵列基板及其制备方法，通过在基板上设计混合TFT，在显示驱动区设置氧化物TFT且在非显示驱动区设置低温多晶硅TFT，这样既能提高LCD栅极驱动电路中的驱动电流，并且降低LCD显示像素驱动时的漏电流。在制备混合TFT的结构时，通过将显示驱动区域的第二有源层设于第一有源层上，且中间设置半导体绝缘层，进而在进行刻蚀的时候，可以通过一个光罩刻蚀出第一有源层与第二有源层的图案，进而可以降低制备成本。
附图说明
下面结合附图和实施例对本发明作进一步的描述。
图1为现有技术中混合TFT的顶栅结构示意图；
图2为现有技术中混合TFT的底栅结构示意图；
图3为本发明提供的阵列基板的结构示意图；
图4为本发明提供的基板的结构示意图；
图5为本发明提供的光刻胶层的结构示意图；
图6为本发明提供的图案层的结构示意图；
图7为本发明提供的刻蚀所述第一有源层、半导体绝缘层及第二有源层后的结构示意图；
阵列基板100；显示驱动区120；非显示驱动区110；
基板101；缓冲层102；第一有源层107；
半导体绝缘层108；第二有源层109；栅极绝缘层103；
栅极1010；层间绝缘层104；源漏极金属层1011；
平坦化层105；透明电极106；光刻胶层1012；
图案层1013；第一通孔1014；第二通孔1015。
具体实施方式
为了更好地理解本发明的内容，下面通过具体的实施例对本发明作进一步说明，但本发明的实施和保护范围不限于此。
以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
如图3所示，在其中一实施例中，本发明提供一种阵列基板100，具有显示驱动区120以及非显示驱动区110，所述显示驱动区120用以驱动显示面板的显示。
继续参照图3所示，所述阵列基板100包括：基板101、缓冲层102、第一有源层107、半导体绝缘层108、第二有源层109、栅极绝缘层103、栅极1010、层间绝缘层104、源漏极金属层1011、平坦化层105以及透明电极106。
所述缓冲层102设于所述基板101上；所述缓冲层102的材料包括氮化硅及氧化硅。
所述第一有源层107设于所述缓冲层102远离所述基板101的一侧；所述第一有源层107的材料为低温多晶硅。
所述第一有源层107具有迁移率高，尺寸较小，充电快开关速度快等优点，可以用于薄膜晶体管的栅极1010驱动，具有很好的效果。
所述半导体绝缘层108设于所述显示驱动区120的第一有源层107上；
所述第二有源层109设于所述显示驱动区120的半导体绝缘层108上；所述第二有源层109的材料为铟镓锌氧化物。
所述第二有源层109具有均一性良好及漏电流低的优点，可用于显示像素驱动。
所述栅极绝缘层103设于所述第一有源层107、所述基板101以及所述第二有源层109上；所述栅极1010设于所述栅极绝缘层103上；所述层间绝缘层104设于所述栅极1010以及所述栅极绝缘层103上；所述源漏极金属层1011设于所述层间绝缘层104上。
在所述显示驱动区120，所述源漏极金属层1011通过第一通孔1014连接所述第二有源层109；所述第一通孔1014贯穿所述层间绝缘层104及部分栅极绝缘层103直至所述第二有源层109。
在所述非显示驱动区110，所述源漏极金属层1011通过第二通孔1015连接所述第一有源层107。
所述第二通孔1015贯穿所述层间绝缘层104及部分栅极绝缘层103直至所述第一有源层107。
所述源漏极金属层1011包括源极走线1011a以及漏级走线1011b。
在所述显示驱动区120，所述源极走线1011a和所述漏级走线1011b连接所述第二有源层109；在所述非显示驱动区110，所述源极走线1011a和所述漏级走线1011b连接所述第一有源层107。
所述平坦化层105设于所述源漏极金属层1011以及所述层间绝缘层104上，所述第一电极设于所述平坦化层105上且连接所述显示驱动区120的源漏极金属层1011。
本发明还提供一种阵列基板100的制备方法，包括如下步骤S1)-S8)。
步骤S1)如图4所示，提供一基板101，所述基板101具有显示驱动区120以及非显示驱动区110；
步骤S2)如图5所示在所述基板101上依次沉积缓冲层102以及非晶硅层；所述缓冲层102的材料包括氮化硅及氧化硅。
步骤S3)激光退火所述非晶硅层形成第一有源层107；所述第一有源层107具有迁移率高，尺寸较小，充电快开关速度快等优点，可以用于薄膜晶体管的栅极1010驱动时具有很好的效果。
步骤S4)在所述显示驱动区120依次沉积半导体绝缘层108及第二有源层109于所述第一有源层107上。
步骤S5)形成一光刻胶层1012于所述第一有源层107以及所述第二有源层109上并曝光显影形成一图案层1013。形成的图案层1013为图5的形状，主要将显示驱动区120以及非显示驱动区110之间的图案层1013去除，进而通过形成的图案层1013对显示驱动区120以及非显示驱动区110的有源层进行刻蚀。
步骤S6)如图6所示，刻蚀所述第一有源层107、半导体绝缘层108及第二有源层109形成相应的图案。其中，没有光刻胶覆盖的区域全部被刻蚀掉，只保留了上方有光刻胶的区域。在刻蚀步骤结束之后，移出光刻胶得到如图7所示的结构膜层。
在刻蚀所述第一有源层107、半导体绝缘层108及第二有源层109形成相应的图案步骤中，在所述显示驱动区120，所述刻蚀的方法为湿法刻蚀；在所述非显示驱动区110，所述刻蚀的方法为干法刻蚀。
所述湿法刻蚀是以液体化学试剂以化学方式去除所述第二有源层109表面的材料；所述干法刻蚀把所述第一有源层107表面暴露于空气中产生的等离子体，等离子体通过所述图案层1013中的间隙，与所述第二有源层109发生物理或化学反应，从而去掉暴露的表面材料；并且干发刻蚀还可以将使所述第二有源层109形成完整的图案。
步骤S7)形成一栅极绝缘层103于所述基板101、所述第一有源层107及所述第二有源层109上；以及
步骤S8)依次沉积栅极1010、层间绝缘层104及源漏极金属层1011于所述栅极绝缘层103上。
在所述显示驱动区120，所述源漏极金属层1011通过第一通孔1014连接所述第二有源层109；所述第一通孔1014贯穿所述层间绝缘层104及部分栅极绝缘层103直至所述第二有源层109。
在所述非显示驱动区110，所述源漏极金属层1011通过第二通孔1015连接所述第一有源层107。
所述第二通孔1015贯穿所述层间绝缘层104及部分栅极绝缘层103直至所述第一有源层107。
所述源漏极金属层1011包括源极走线以及漏级走线。
在所述显示驱动区120，所述源极走线和所述漏级走线连接所述第二有源层109；在所述非显示驱动区110，所述源极走线和所述漏级走线连接所述第一有源层107。
本发明提供了一种阵列基板及其制备方法，通过在基板101上设计混合TFT，在显示驱动区120设置氧化物TFT且在非显示驱动区110设置低温多晶硅TFT，这样既能提高LCD栅极驱动电路中的驱动电流，并且降低LCD显示像素驱动时的漏电流。在制备混合TFT的结构时，通过将显示驱动区120域的第二有源层109设于第一有源层107上，且中间设置半导体绝缘层108，进而在进行刻蚀的时候，可以通过一个光罩刻蚀出第一有源层107与第二有源层109的图案，进而可以降低制备成本。
应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对本发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。

Claims (10)

1.一种阵列基板，其特征在于，具有显示驱动区以及非显示驱动区，所述阵列基板包括：
基板；
缓冲层，设于所述基板上；
第一有源层，设于所述缓冲层远离所述基板的一侧；
半导体绝缘层，设于所述显示驱动区的第一有源层上；
第二有源层，设于所述显示驱动区的半导体绝缘层上；
栅极绝缘层，设于所述第一有源层、所述基板以及所述第二有源层上；栅极，设于所述栅极绝缘层上；
层间绝缘层，设于所述栅极以及所述栅极绝缘层上；
源漏极金属层，设于所述层间绝缘层上；
其中，在所述显示驱动区，所述源漏极金属层通过第一通孔连接所述第二有源层；在所述非显示驱动区，所述源漏极金属层通过第二通孔连接所述第一有源层。
2.根据权利要求1所述的阵列基板，其特征在于，
所述第一通孔贯穿所述层间绝缘层及部分栅极绝缘层直至所述第二有源层。
3.根据权利要求1所述的阵列基板，其特征在于，
所述第二通孔贯穿所述层间绝缘层及部分栅极绝缘层直至所述第一有源层。
4.根据权利要求1所述的阵列基板，其特征在于，
所述第一有源层的材料为多个低温多晶硅。
5.根据权利要求1所述的阵列基板，其特征在于，
所述第二有源层的材料为铟镓锌氧化物。
6.根据权利要求1所述的阵列基板，其特征在于，
所述缓冲层的材料包括氮化硅及氧化硅。
7.根据权利要求1所述的阵列基板，其特征在于，
所述源漏极金属层包括源极走线以及漏级走线。
8.根据权利要求7所述的阵列基板，其特征在于，
在所述显示驱动区，所述源极走线和所述漏级走线连接所述第二有源层；
在所述非显示驱动区，所述源极走线和所述漏级走线连接所述第一有源层。
9.一种阵列基板的制备方法，其特征在于，包括如下步骤：
提供一基板，所述基板具有显示驱动区以及非显示驱动区；
在所述基板上依次沉积缓冲层以及非晶硅层；
激光退火所述非晶硅层形成第一有源层；
在所述显示驱动区依次沉积半导体绝缘层及第二有源层于所述第一有源层上；
形成一光刻胶层于所述第一有源层以及所述第二有源层上并曝光显影形成一图案层；
刻蚀所述第一有源层、所述半导体绝缘层及所述第二有源层形成相应的图案，并移除所述图案层；
形成一栅极绝缘层于所述基板、所述第一有源层及所述第二有源层上；以及
依次沉积栅极、层间绝缘层及源漏极金属层于所述栅极绝缘层上。
10.根据权利要求9所述的阵列基板的制备方法，其特征在于，在所述的刻蚀所述第一有源层、所述半导体绝缘层及所述第二有源层形成相应的图案的步骤中，
在所述显示驱动区，所述刻蚀的方法为湿法刻蚀；
在所述非显示驱动区，所述刻蚀的方法为干法刻蚀。
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