CN110600558A - Boron process suitable for P + selective emitter battery - Google Patents
Boron process suitable for P + selective emitter battery Download PDFInfo
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- CN110600558A CN110600558A CN201910685542.XA CN201910685542A CN110600558A CN 110600558 A CN110600558 A CN 110600558A CN 201910685542 A CN201910685542 A CN 201910685542A CN 110600558 A CN110600558 A CN 110600558A
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000008569 process Effects 0.000 title claims abstract description 20
- 238000004528 spin coating Methods 0.000 claims abstract description 19
- 238000001035 drying Methods 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 230000003647 oxidation Effects 0.000 claims abstract description 4
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 4
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 238000009792 diffusion process Methods 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 8
- 239000005388 borosilicate glass Substances 0.000 claims description 6
- 238000007654 immersion Methods 0.000 claims description 4
- 238000009987 spinning Methods 0.000 claims description 2
- 230000009471 action Effects 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
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Abstract
The invention relates to a boron process suitable for a P + selective emitter battery, which comprises the following steps: (1) constant source boron spin coating; (2) drying; (3) entering the boat into the furnace tube; (4) leak detection is carried out; (5) heating and oxidizing; (6) anaerobic propulsion; (7) high-temperature oxidation; (8) cooling; (9) low temperature product boron source; (10) low-temperature propulsion; (11) taking out of the boat; (12) and (4) laser doping. According to the invention, through the combined action of constant source boron propulsion and gas boron source doping, on one hand, a lightly doped region is formed, and the structure with shallow junctions with higher surface concentration is provided, so that the open-circuit voltage and the short-circuit current of the battery can be effectively improved; on the other hand, the laser is used for secondary doping to form a heavily doped region, so that ohmic contact can be effectively improved, and the filling factor is improved.
Description
Technical Field
The invention relates to the field of solar cell manufacturing, in particular to a boron process suitable for a P + selective emitter cell.
Background
As the demand for flat-rate internet access becomes stronger, high-efficiency batteries have become a trend of development. Especially today's N-TOPCon batteries are getting more and more fired. However, how to make the efficiency of the N-TOPCon battery more step up becomes the focus of research and development. The boron diffusion is widely applied to the N-type high-efficiency solar cell as an important means for doping a p + layer, a common mode is that a gas boron source is carried into a furnace tube to carry out single boron doping, and a boron selective doping diffusion technology is still blank.
In addition, the conventional boron diffusion process is designed to form good ohmic contact with a metal electrode, and the sheet resistance is low, so that the contact area of the non-metal electrode is high in recombination, and the open-circuit voltage and the short-circuit current of the battery are limited.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the boron process suitable for the P + selective emitter battery is provided, on one hand, the lightly doped region can effectively reduce the doping amount of a boron source, reduce boron-oxygen recombination and improve the open-circuit voltage and the short-circuit current of the battery; on the other hand, the heavily doped region keeps good ohmic contact with the metal electrode, so that the filling factor is improved, and the efficiency of the battery is further improved.
The technical scheme adopted by the invention for solving the technical problems is as follows: a boron process suitable for use in a P + selective emitter cell includes the steps of,
(1) performing constant source boron spin coating, namely spinning the impregnating solution and the boron source on a silicon wafer step by using a spin coating mode;
(2) drying at the temperature of 120-;
(3) the boat is put in, the temperature is maintained at 850 ℃ under 750 plus, the nitrogen flow is 1000 plus 2500sccm, and the time is 6-15 min;
(4) detecting leakage, wherein the nitrogen flow is 1000-;
(5) heating and oxidizing to decompose organic matters in the boron spin-coating liquid;
(6) anaerobic boosting, controlling the initial concentration of the boron-diffused front surface;
(7) high-temperature oxidation is carried out, and the junction depth of boron diffusion is controlled;
(8) cooling, and controlling the boron-rich layer of boron diffusion;
(9) low temperature product boron source;
(10) low temperature advancing, doping boron source into borosilicate glass, maintaining the temperature at 750-;
(11) taking out the silicon wafer, keeping the temperature at 850 ℃ under 750 plus temperature and the nitrogen flow at 2000sccm under 1000 plus temperature for 6-15min, and finally taking out the silicon wafer;
(12) laser doping, placing the boron-expanded surface of the silicon wafer on a table top, designing a required graph, and adopting the spot size of 60-150 μm, the laser power of 30-80W, the repetition frequency of 10-60MHz, the proofing speed of 4-20m/s and the spot overlapping rate of 90-99.5%.
Furthermore, in the step (1), 1-2.5mL of immersion liquid is adopted, and is spun on the silicon wafer by using a spin coating mode, and then 0.3-0.8mL of boron source is dripped on the silicon wafer.
Furthermore, in the step (5) of the present invention, the temperature is raised to 900-.
Furthermore, in the step (6) of the present invention, the temperature is maintained at 1000 ℃ for 5-25min, and the nitrogen flow is kept at 1000 ℃ for 1000sccm and 2500 sccm.
Furthermore, in the step (7) of the present invention, the temperature is maintained at 1000 ℃ for 5-30min, the nitrogen flow is 1000sccm and 2500sccm, and the oxygen flow is 5-15 slm.
Furthermore, in the step (8) of the present invention, the temperature is decreased to 750-.
Furthermore, in the step (9) of the present invention, the temperature is maintained at 750-.
Further, steps (1) to (2) described in the present invention are performed on a boron spin coater.
Further, steps (3) to (11) of the present invention are carried out in a tubular diffusion furnace.
Further, the step (12) of the present invention is performed on a laser device.
On one hand, the boron-doped light diffusion region has a structure with higher surface concentration and shallow junctions, and the structure is favorable for reducing battery recombination and improving open-circuit voltage and short-circuit current; the invention adopts a constant source spin coating mode, which not only ensures the surface concentration, but also can effectively avoid the non-uniformity of doping.
On the other hand, the boron lightly-expanded region can be guaranteed to form a structure with a high surface concentration deep junction after secondary diffusion in a laser doping mode, and the structure is favorable for reducing contact resistance with a metal region, so that the filling factor is improved. According to the invention, the boron source of the gas is doped into the borosilicate glass, and the boron-rich borosilicate glass can effectively improve the surface concentration and is beneficial to laser doping.
The invention has the advantages that the defects in the background technology are overcome, and through the combined action of constant source boron propulsion and gas boron source doping, on one hand, a lightly doped region is formed, and the structure with shallow junctions with higher surface concentration is formed, so that the open-circuit voltage and the short-circuit current of the battery can be effectively improved; on the other hand, the laser is used for secondary doping to form a heavily doped region, so that ohmic contact can be effectively improved, and the filling factor is improved.
Drawings
FIG. 1 is a process flow diagram of the present invention;
FIG. 2 is a graph of ECV under the process of the present invention.
Detailed Description
The invention will now be described in further detail with reference to the drawings and preferred embodiments. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.
A boron process suitable for use in a P + selective emitter cell, as shown in figure 1, comprises the steps of:
(1) constant source boron spin coating (including immersion liquid and boron source liquid), and the required surface concentration can be effectively ensured by the step;
(2) drying;
(3) entering the boat into the furnace tube;
(4) leak detection is carried out;
(5) heating and oxidizing, wherein the main purpose of the step is to oxidize and decompose organic matters of the boron spin-coating liquid;
(6) oxygen-free drive, by which the initial concentration of the boron-diffused front surface is controlled;
(7) high-temperature oxidation, wherein the junction depth of boron diffusion is controlled through the step;
(8) cooling, and controlling the boron-rich layer diffused by boron through the step;
(9) the boron source is multiplied at a low temperature, and the boron content of the boron junction oxide layer is controlled in the step, so that secondary diffusion is conveniently carried out by laser doping to form higher surface concentration;
(10) low temperature advancement, which incorporates a boron source onto the borosilicate glass;
(11) taking out of the boat;
(12) and (4) laser doping.
Wherein: steps (1) - (2), (3) - (11) and (12) are performed on a spin coater, a tubular diffusion furnace, and a laser apparatus, respectively.
Example 1
A constant source boron diffusion process suitable for a P + selective emitter battery comprises the following specific flow: an N-type silicon wafer with high minority carrier lifetime is adopted, the resistivity is 0.2-2 omega-cm, and two sides are subjected to alkaline washing and texturing;
(1) constant source boron spin coating, namely adopting 1-1.5mL of impregnating solution to spin on a silicon wafer in a spin coating mode, and then dripping 0.4-0.8mL of boron source to spin on the silicon wafer. The spin coating method can prepare 120-140ohm with higher sheet resistance and uniformity STD < 8;
(2) drying, namely drying for 30-60s on a chain machine at the temperature of 120-;
(3) entering the boat, wherein the temperature is maintained at 850 ℃ under 750 plus, the nitrogen flow is 2000sccm under 1000 plus, and the time is about 8-15 min;
(4) leak detection, wherein nitrogen flow is 1000-;
(5) raising the temperature to 900-;
(6) anaerobic propulsion-the temperature is maintained at 900-;
(7) high temperature oxidation-maintaining the temperature at 900-;
(8) cooling, namely, the temperature is reduced to 850 ℃ under 750-;
(9) the low temperature product boron source-temperature is maintained at 750-;
(10) low temperature advancing-the temperature is maintained to 750-;
(11) taking out the silicon wafer, wherein the temperature is kept at 850 ℃ under 750 plus, the nitrogen flow is kept at 2000sccm under 1000 plus, and the time is about 8-15min, and finally taking out the silicon wafer. The boron light diffusion area is basically completed, the sheet resistance is 120-3The depth of the junction is 0.4-0.6 μm.
(12) Laser doping, namely placing the boron diffusion surface of a silicon wafer on a table top, designing a required graph, and adopting the spot size of 60-120 mu m, the laser power of 30-50W, the repetition frequency of 10-30MHz, the proofing speed of 8-18m/s and the spot overlapping rate of 95-99.5%.
The surface concentration of the heavy dope is 1E19-2E19atom/cm3Junction depth of 0.7-1.5 μm, sheet resistance difference from the slightly enlarged region>40ohm/sq, and the sheet resistance is 70-100 ohm/sq.
Example 2
A constant source boron diffusion process suitable for a P + selective emitter battery comprises the following specific flow: an N-type silicon wafer with a long minority carrier lifetime is adopted, the resistivity is 2-6 omega-cm, and two sides are subjected to alkaline washing and texturing;
(1) constant source boron spin coating, namely adopting 1.5-2.5mL of immersion liquid to spin on a silicon wafer in a spin coating mode, and then dripping 0.3-0.6mL of boron source to spin on the silicon wafer. The spin coating method can prepare a high sheet resistance of 130-200ohm and a uniformity STD of 9-10;
(2) drying, namely drying for 40-80s on a chain machine at the temperature of 180-;
(3) entering the boat, wherein the temperature is maintained at 850 ℃ under 750-;
(4) detecting leakage, namely introducing nitrogen flow of 1500-;
(5) raising the temperature to 950-;
(6) anaerobic propulsion-the temperature is maintained at 950 ℃ and 1000 ℃, the nitrogen flow is 1500 ℃ and 2500sccm, and the time is about 5-15 min;
(7) high temperature oxidation-the temperature is maintained at 950-;
(8) cooling, namely, the temperature is reduced to 850 ℃ under 750-;
(9) the low temperature product boron source-temperature is maintained at 750-;
(10) low temperature advancing-the temperature is maintained to 750-;
(11) taking out the silicon wafer, wherein the temperature is kept at 850 ℃ under 750 plus, the nitrogen flow is kept at 2000sccm under 1000 plus, and the time is about 6-15min, and finally taking out the silicon wafer. The boron light diffusion area is basically completed, the sheet resistance is 130-3The depth of the knot is 0.5-0.8 μm.
(12) Laser doping, namely placing the boron diffusion surface of a silicon wafer on a table top, designing a required graph, and adopting the spot size of 80-150 mu m, the laser power of 40-80W, the repetition frequency of 20-60MHz, the proofing speed of 4-20m/s and the spot overlapping rate of 90-96%.
Surface concentration of heavy dope>1E19 atom/cm3Junction depth of 0.8-2 μm, sheet resistance difference from the slightly expanded region>60ohm/sq, and the sheet resistance is 60-120 ohm/sq.
The above embodiments show that, through the combined action of constant source boron propulsion and gas boron source doping, on one hand, a lightly doped region is formed, and has a structure with a shallow junction with a higher surface concentration, so that the structure with the shallow junction with the high front surface concentration can be effectively prepared, the open-circuit voltage and the short-circuit current of the battery can be effectively improved, and a powerful premise is provided for forming heavy doping by secondary diffusion under the action of laser; on the other hand, the laser is used for secondary doping to form a heavily doped region, so that ohmic contact can be effectively improved, and the filling factor is improved. Finally, the selective emitter structure of the low square resistance deep junction in the laser area and the high square resistance shallow junction in the non-laser area is achieved.
The Uoc of the battery prepared by the process is improved>3mV, Isc boost>40mA, Eta boost>0.25 percent; the heavy diffusion ECV curve is shown in FIG. 2, the surface concentration of the boron diffusion light doped region high sheet resistance shallow junction<2E19 atom/cm3Therefore, the open-circuit voltage and the short-circuit current can be effectively improved; the boron content of borosilicate glass in the boron diffusion lightly doped region is set to be beneficial to secondary doping of laser, so that on one hand, a heavily doped region is guaranteed to form good ohmic contact with a metal electrode, on the other hand, the tolerance on laser parameter variation is improved, and the damage caused by laser is reduced.
While particular embodiments of the present invention have been described in the foregoing specification, various modifications and alterations to the previously described embodiments will become apparent to those skilled in the art from this description without departing from the spirit and scope of the invention.
Claims (10)
1. A boron process suitable for a P + selective emitter cell, comprising: comprises the following steps of (a) carrying out,
(1) performing constant source boron spin coating, namely spinning the impregnating solution and the boron source on a silicon wafer step by using a spin coating mode;
(2) drying at the temperature of 120-;
(3) the boat is put in, the temperature is maintained at 850 ℃ under 750 plus, the nitrogen flow is 1000 plus 2500sccm, and the time is 6-15 min;
(4) detecting leakage, wherein the nitrogen flow is 1000-;
(5) heating and oxidizing to decompose organic matters in the boron spin-coating liquid;
(6) anaerobic boosting, controlling the initial concentration of the boron-diffused front surface;
(7) high-temperature oxidation is carried out, and the junction depth of boron diffusion is controlled;
(8) cooling, and controlling the boron-rich layer of boron diffusion;
(9) low temperature product boron source;
(10) low temperature advancing, doping boron source into borosilicate glass, maintaining the temperature at 750-;
(11) taking out the silicon wafer, keeping the temperature at 850 ℃ under 750 plus temperature and the nitrogen flow at 2000sccm under 1000 plus temperature for 6-15min, and finally taking out the silicon wafer;
(12) laser doping, placing the boron-expanded surface of the silicon wafer on a table top, designing a required graph, and adopting the spot size of 60-150 μm, the laser power of 30-80W, the repetition frequency of 10-60MHz, the proofing speed of 4-20m/s and the spot overlapping rate of 90-99.5%.
2. The boron process of claim 1, wherein: in the step (1), 1-2.5mL of immersion liquid is adopted, and is spun on the silicon wafer in a spin coating mode, and then 0.3-0.8mL of boron source is dripped on the silicon wafer in a spin coating mode.
3. The boron process of claim 1, wherein: in the step (5), the temperature is raised to 900-.
4. The boron process of claim 1, wherein: in the step (6), the temperature is maintained at 1000 ℃ for 5-25min, and the nitrogen flow is kept at 1000 ℃ for 5-25min.
5. The boron process of claim 1, wherein: in the step (7), the temperature is maintained at 1000 ℃ for 900-.
6. The boron process of claim 1, wherein: in the step (8), the temperature is reduced to 750-.
7. The boron process of claim 1, wherein: in the step (9), the temperature is maintained at 750-.
8. The boron process of claim 1, wherein: the steps (1) to (2) are carried out on a boron spin coater.
9. The boron process of claim 1, wherein: the steps (3) to (11) are carried out in a tubular diffusion furnace.
10. The boron process of claim 1, wherein: the step (12) is carried out on a laser device.
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Cited By (5)
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| CN111628047A (en) * | 2020-06-01 | 2020-09-04 | 江苏顺风光电科技有限公司 | Manufacturing method of N-type TOPCon solar cell |
| CN111739794A (en) * | 2020-06-30 | 2020-10-02 | 浙江晶科能源有限公司 | Boron diffusion method, solar cell and manufacturing method thereof |
| CN112117334A (en) * | 2020-09-11 | 2020-12-22 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Preparation method of selective emitter and preparation method of solar cell |
| CN113594299A (en) * | 2021-07-27 | 2021-11-02 | 普乐新能源科技(徐州)有限公司 | Manufacturing process of N-type silicon wafer P + + structure |
| CN115799364A (en) * | 2023-02-07 | 2023-03-14 | 天合光能股份有限公司 | Solar cell |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111628047A (en) * | 2020-06-01 | 2020-09-04 | 江苏顺风光电科技有限公司 | Manufacturing method of N-type TOPCon solar cell |
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| CN112117334A (en) * | 2020-09-11 | 2020-12-22 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Preparation method of selective emitter and preparation method of solar cell |
| CN113594299A (en) * | 2021-07-27 | 2021-11-02 | 普乐新能源科技(徐州)有限公司 | Manufacturing process of N-type silicon wafer P + + structure |
| CN113594299B (en) * | 2021-07-27 | 2024-01-26 | 普乐新能源科技(泰兴)有限公司 | Manufacturing process of P++ structure of N-type silicon wafer |
| CN115799364A (en) * | 2023-02-07 | 2023-03-14 | 天合光能股份有限公司 | Solar cell |
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