CN110600500A - 一种钙钛矿与n型硅基背接触电池叠加电池结构 - Google Patents

一种钙钛矿与n型硅基背接触电池叠加电池结构 Download PDF

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CN110600500A
CN110600500A CN201910811811.2A CN201910811811A CN110600500A CN 110600500 A CN110600500 A CN 110600500A CN 201910811811 A CN201910811811 A CN 201910811811A CN 110600500 A CN110600500 A CN 110600500A
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张敏
刘飞
何凤琴
王冬冬
张志郢
常纪鹏
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Photovoltaic Industry Technology Branch of Qinghai Huanghe Hydropower Development Co Ltd
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Abstract

本发明公开了一种钙钛矿与N型硅基背接触电池叠加电池结构，其特征在于，依次包括：钙钛矿材料吸收层、正面透明导电膜沉积层、正面钝化层、前表面场、N型单晶硅片衬底及背面钝化层，N型单晶硅片衬底与背面钝化层之间设有相互独立的背面P+掺杂层和背面N+掺杂层，两个金属电极。分别与背面P+掺杂层、背面N+掺杂层连接，且从背面钝化层表面露出。本发明采用丝网印刷纳米磷浆料或纳米硼浆料叠加激光推进的方式实现钙钛矿材料叠加背接触电池背面叉指状PN结的制备，实现叠层电池内部电流的最大输出，进一步提高背接触太阳电池的光电转换效率。

Description

一种钙钛矿与N型硅基背接触电池叠加电池结构
技术领域
本发明涉及一种钙钛矿与N型硅基背接触电池叠加电池结构，属于太阳能电池技术领域。
背景技术
目前，硅基太阳能电池是太阳能电池的主流，占据了90％的光伏市场，硅太阳能电池的效率已达到26.1.％，接近肖克利—奎伊瑟(Shockley—Queisser)极限效率(29.4％)，但制造成本相对石油、核能源依旧居高，因此降低硅基太阳能电池的制备成本依旧是实现阶段及未来一段时间的研发目标。目前研究发现由于太阳光谱的能量分布较宽，任何一种半导体材料只能吸收能量值比其禁带宽度大的光子。因此，可在硅电池顶层叠加宽带隙材料构成叠层电池，拓宽电池的光谱响应，最大限度地利用太阳能，提高太阳能电池的效率。目前已报道的基于硅基叠层电池的理论极限效率可从29％提高到42.5％。钙钛矿材料也被认为是下一代低成本太阳能电池的光吸收材料。由于钙钛矿和硅具有不同的带隙，为了充分利用太阳光谱，钙钛矿太阳能电池可作为顶电池与硅电池形成叠层太阳能电池，既拓宽了电池的光谱响应范围，提高了太阳能电池效率，又降低了制备成本。
随着电池技术的不断革新，钙钛矿材料的优异性能成为热门的研究对象，据国际光伏技术进步路线报告显示，到2025年，新型结构的电池份额将达到约5％，成为重要的光伏发电技术形式；其中，钙钛矿电池被誉为未来可对光伏技术实现变革型改进的技术方向，能够大大降低光伏电池的生产成本，从而节约度电成本，《科学》(Science)期刊把它评为2013年的10大科学突破之一；被誉为现行高效光伏技术中有希望给能源发展带来颠覆性革新的高效电池技术形式，并且产业化大面积钙钛矿N型硅基叠层电池已经在成为研究的热点。如何将叠层电池的优良特性最大程度地发挥出来，制备出质量优异的PN结，实现电流的最大输出，进一步降低叠层电池成本也是目前的技术关键。本专利提出了一种大面积钙钛矿N型硅基叠层电池的制备方法，尤其提出了该结构电池PN结的制备方法。从而实现电流的有效导出，实现电池光电转换效率的最大化。
近几年N型硅基体高效电池发展迅速，市场优势愈加明显，尽管如此，硅基材料本身的材料特性决定了其具有较窄的光谱吸收范围，不能最大程度实现太阳光谱的全面吸收。然而钙钛矿材料具有较宽的光谱吸收范围，钙钛矿材料叠加N型硅基结构的叠层电池应运而生。尽管叠层电池可以实现太阳光谱的有效吸收，产生更多的电流，然而电池在输出的过程中仍然存在内耗损失，同时，常规的管式高温扩散方式制备PN结的方式对硅片基底损伤大、方阻均匀性较差，PN结性能一般；同时高温下的电能消耗大，电池成本依旧居高。因此本专利从如何实现电池内部电流的最佳输出及降低电池制造成本着手，提出一种钙钛矿叠加N型硅基叠层电池PN结制备的方法，制备出性能优异的PN结，实现叠层电池内部电流的最大输出。
研究报道钙钛矿材料的光谱响应在300-400nm的紫外波段，就有很高的光谱吸收能力，在400-700nm的光谱范围，其光谱吸收能力达到最高。然而N型硅基电池存在吸收光谱波段较窄的问题。因此很多学者提出钙钛矿薄膜层叠加硅基电池的叠层电池结构，解决了硅基太阳电池对光不能充分利用的问题，从而实现单位面积可以吸收更多光，有效提升硅基电池的光电转换效率。
目前针对钙钛矿与硅基叠层电池技术的开发成为高效电池技术热议之一。如何实现大面积钙钛矿硅基叠层电池制备，发挥叠层电池的最大优点，成为目前技术研发的重点领域。目前对于钙钛矿与N型硅基叠层电池报道的制备方法主要采用三溴化硼管式高温扩散的方式实现叠层电池PN结的制备，在制备的过程中，高温扩散的方式会造成硅片基底的损伤，同时由于氧化硼的沸点高达1680℃，而硼扩散的温度一般低于1000℃，在此温度下氧化硼依然为液态，在硅片表面很难做到均匀分布，所以反应生成的硼硅玻璃也不均匀，具体表现为扩散后硅片表面颜色的分布不均匀，形成“花片”现象。因此采用这种技术实现PN结的制备时，扩散均匀性很难保障，PN结质量相对较差。对于N型硅片基底和钙钛矿叠加的N型叠层电池而言，如何在N型硅片基底上形成高质量的PN结，为叠层电池电流的输出提供更高质量的渠道尤为重要，成为大面积钙钛矿叠加N型硅基叠层电池技术研发的关键点。因此本项目提出一种丝网印刷纳米硼浆叠加激光掺杂的硼扩散的技术实现方式。在N型硅基底上实现高质量的PN结的制备，从而保障钙钛矿薄膜层优异的光学性能及电学性能的输出。
发明内容
本发明所要解决的技术问题是：目前管式高温硼扩散存在方阻不均匀，PN结质量较差，导致电池电流输出损失的问题。
为了解决上述问题，本发明提供了一种钙钛矿与N型硅基背接触电池叠加电池结构，其特征在于，依次包括：钙钛矿材料吸收层、正面透明导电膜沉积层、正面钝化层、前表面场、N型单晶硅片衬底及背面钝化层，N型单晶硅片衬底与背面钝化层之间设有相互独立的背面P+掺杂层和背面N+掺杂层，两个金属电极。分别与背面P+掺杂层、背面N+掺杂层连接，且从背面钝化层表面露出。
优选地，所述正面钝化层和背面钝化层均为SiO2层；正面透明导电膜沉积层为ITO导电膜层。
本发明采用丝网印刷纳米磷浆料或纳米硼浆料叠加激光推进的方式实现钙钛矿材料叠加背接触电池背面叉指状PN结的制备，实现叠层电池内部电流的最大输出，进一步提高背接触太阳电池的光电转换效率。
附图说明
图1为本发明提供的钙钛矿与N型硅基背接触电池叠加电池结构的示意图。
具体实施方式
为使本发明更明显易懂，兹以优选实施例，并配合附图作详细说明如下。
实施例
如图1所示，为本发明提供的一种钙钛矿与N型硅基背接触电池叠加电池结构，其特征在于，依次包括：钙钛矿材料吸收层1、正面透明导电膜沉积层2、正面钝化层3、前表面场4、N型单晶硅片衬底5及背面钝化层8，N型单晶硅片衬底5与背面钝化层8之间设有相互独立的背面P+掺杂层6和背面N+掺杂层7，两个金属电极。9分别与背面P+掺杂层6、背面N+掺杂层7连接，且从背面钝化层8表面露出。
所述正面钝化层3和背面钝化层8均为SiO2层；正面透明导电膜沉积层2为ITO导电膜层。
上述电池的制备方法为：
1)对N型单晶硅片衬底5进行清洗制绒；
2)在N型单晶硅片衬底5的背面分别采用丝网印刷纳米磷浆和纳米硼浆的技术手段印刷区域化的P区、N区，分别采用激光掺杂的方式实现P区及N区的区域化掺杂，得到背面P+掺杂层6和背面N+掺杂层7，从而实现背接触电池背面叉指状PN结的制备；
3)在背面P+掺杂层6和背面N+掺杂层7上分别印刷金属电极9；
4)正面采旋技术在表面涂一层纳米磷浆料，然后采用激光掺杂的方式实现前表面场4的制备；
5)采用热氧化的方式分别在正反面生长一层SiO2薄膜，实现界面钝化，得到正面钝化层3和背面钝化层8；
6)采用RPD的方法在电池正面沉积一层TCO导电薄膜，即正面透明导电膜沉积层2；
6)在TCO导电薄膜表面旋涂一层钛矿吸收层薄膜，即钙钛矿材料吸收层1。

Claims (2)

1.一种钙钛矿与N型硅基背接触电池叠加电池结构，其特征在于，依次包括：钙钛矿材料吸收层(1)、正面透明导电膜沉积层(2)、正面钝化层(3)、前表面场(4)、N型单晶硅片衬底(5)及背面钝化层(8)，N型单晶硅片衬底(5)与背面钝化层(8)之间设有相互独立的背面P+掺杂层(6)和背面N+掺杂层(7)，两个金属电极。(9)分别与背面P+掺杂层(6)、背面N+掺杂层(7)连接，且从背面钝化层(8)表面露出。
2.如权利要求1所述的钙钛矿与N型硅基背接触电池叠加电池结构，其特征在于，所述正面钝化层(3)和背面钝化层(8)均为SiO2层；正面透明导电膜沉积层(2)为ITO导电膜层。
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