CN110581335A - Sequential feed power distribution network based on substrate integrated waveguide - Google Patents

Sequential feed power distribution network based on substrate integrated waveguide Download PDF

Info

Publication number
CN110581335A
CN110581335A CN201910760362.3A CN201910760362A CN110581335A CN 110581335 A CN110581335 A CN 110581335A CN 201910760362 A CN201910760362 A CN 201910760362A CN 110581335 A CN110581335 A CN 110581335A
Authority
CN
China
Prior art keywords
resonator
microstrip line
integrated waveguide
output port
substrate integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910760362.3A
Other languages
Chinese (zh)
Other versions
CN110581335B (en
Inventor
周春霞
刘婷婷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing Tech University
Original Assignee
Nanjing Tech University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing Tech University filed Critical Nanjing Tech University
Priority to CN201910760362.3A priority Critical patent/CN110581335B/en
Publication of CN110581335A publication Critical patent/CN110581335A/en
Application granted granted Critical
Publication of CN110581335B publication Critical patent/CN110581335B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • H01P5/16Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/50Structural association of antennas with earthing switches, lead-in devices or lightning protectors

Landscapes

  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

The invention discloses a sequential feed power distribution network based on a substrate integrated waveguide, which comprises an upper layer circuit structure, a middle layer dielectric substrate and a lower layer grounding metal. The upper layer circuit structure comprises a full-mode rectangular substrate integrated waveguide resonator, two half-mode substrate integrated waveguide resonators, an input port, four output ports and a microstrip feeder line connecting the ports and the resonators, and the four output ports generate signals with equal amplitude and 90-degree phase difference of adjacent ports by combining the electromagnetic characteristic of a TE201 resonance mode and the half-mode substrate integrated waveguide, so that the antenna feed system is suitable for an antenna feed system. The power distribution network has simple structural design and good performance, and is easy to realize circuit integration and system packaging.

Description

Sequential feed power distribution network based on substrate integrated waveguide
Technical Field
The invention relates to the field of power distribution feed networks, in particular to a sequential feed power distribution network based on substrate integrated waveguide.
Background
Currently, with the rapid development of long-distance wireless communication, the demand for circularly polarized antennas is increasing. The key to realizing circular polarization is to generate orthogonal linearly polarized waves with equal amplitude, and in order to realize orthogonal polarization and improve the polarization purity of the main lobe, many designs are designed to realize circular polarization by sequentially rotating a feed network.
the conventional sequential feed network is mostly realized by adopting a microstrip circuit, the phase difference is realized by controlling the length of the microstrip, but the phase is realized by the microstrip only, the phase is easy to be unstable, in addition, because of the dispersion phenomenon, the phase and the length are not in a direct proportion relation any more, and along with the improvement of the frequency, the disadvantages of the microstrip are gradually highlighted: large circuit area and low power capacity.
The substrate integrated waveguide as one device may be integrated with other planar structure circuit and has the advantages of traditional waveguide structure, high Q value, low loss, easy design and machining, etc. and may be used widely in microwave and millimeter wave integrated circuit. The substrate integrated waveguide is a dielectric substrate with metal conducting layers coated on the upper surface and the lower surface, and metal through holes penetrating through the upper metal conducting layer and the lower metal conducting layer are uniformly distributed on the dielectric substrate along the edge of the waveguide, so that the substrate integrated waveguide can be equivalently formed into a rectangular waveguide. However, the sequential feed circuit based on the substrate integrated waveguide utilizes the coupler and the phase shifter to achieve the phase requirement, and the circuit is heavy and bulky, which is not beneficial to miniaturization and circuit integration.
Disclosure of Invention
The invention aims to provide a sequential feed power distribution network which is simple in circuit, small in size, easy to integrate and easy to process.
The technical solution for realizing the purpose of the invention is as follows: a sequential feed power distribution network based on substrate integrated waveguide comprises an upper layer circuit structure, a middle layer dielectric substrate and a lower layer grounding metal; the upper layer circuit structure is attached to the upper surface of the middle layer dielectric substrate, and the grounding metal is attached to the lower surface of the middle layer dielectric substrate;
the upper surface of the middle layer dielectric substrate is provided with a first resonator, a second resonator and a third resonator, the first resonator is a full-mode rectangular substrate integrated waveguide resonant cavity, and the second resonator and the third resonator are both half-mode substrate integrated waveguide resonant cavities; the second resonator and the third resonator are respectively positioned at the oblique diagonal positions of the first resonator, and one side of the second resonator, which is opposite to the opening of the second resonator, and one side of the third resonator, which is opposite to the opening of the third resonator, are connected with the first resonator in a windowing coupling mode; a second output port and a third output port are arranged on one side of the middle layer dielectric substrate on the same side of the second resonator opening, a fourth output port and a fifth output port are arranged on one side of the middle layer dielectric substrate on the same side of the third resonator opening, and the first input port is independently positioned on one side of the middle layer dielectric substrate;
The first input port, the second output port and the fourth output port are respectively connected with one side, close to the first input port, one side, close to the second output port and one side, close to the fourth output port, of the first resonator through a first microstrip line, a second microstrip line and a fourth microstrip line, the third output port is connected with an opening of the second resonator through a third microstrip line, and the fifth output port is connected with an opening of the third resonator through a fifth microstrip line; all microstrip lines are connected with the resonator in a capacitive coupling mode; the through holes of the resonator are all metalized through holes, and the through holes penetrate through the middle-layer dielectric substrate and are connected with the lower-layer grounding metal.
Compared with the prior art, the invention has the following remarkable advantages: 1) based on the substrate integrated waveguide, the circuit is simple and the loss is small; 2) the phase difference is realized based on the electromagnetic property of the resonant cavity resonant mode, and an additional cascade coupler and a phase shifter are not needed, so that the system integration and miniaturization are facilitated.
Drawings
Fig. 1 is a schematic circuit structure diagram of a sequential feed power division network based on a substrate integrated waveguide according to the present invention.
fig. 2 is a schematic diagram of the circuit structure dimensions in the embodiment of the invention.
Fig. 3 is a simulation diagram of the S11 parameter in the embodiment of the present invention.
Fig. 4 is a parameter simulation diagram of S21, S31, S41, and S51 in the embodiment of the present invention.
FIG. 5 is a simulation diagram of phase difference between adjacent ports according to an embodiment of the present invention.
Detailed Description
with reference to fig. 1, the sequential feed power division network based on the substrate integrated waveguide of the present invention includes an upper layer circuit structure, an intermediate layer dielectric substrate and a lower layer grounding metal; the upper layer circuit structure is attached to the upper surface of the middle layer dielectric substrate, and the grounding metal is attached to the lower surface of the middle layer dielectric substrate;
A first resonator 6, a second resonator 7 and a third resonator 8 are arranged on the upper surface of the middle-layer dielectric substrate, the first resonator 6 is a full-mode rectangular substrate integrated waveguide resonant cavity, and the second resonator 7 and the third resonator 8 are both half-mode substrate integrated waveguide resonant cavities; the second resonator 7 and the third resonator 8 are respectively positioned at the oblique opposite angles of the first resonator 6, and one side of the second resonator 7 opposite to the opening thereof and one side of the third resonator 8 opposite to the opening thereof are connected with the first resonator 6 in a windowing coupling mode; a second output port P2 and a third output port P3 are arranged on one side of the middle layer dielectric substrate on the same side of the opening of the second resonator 7, a fourth output port P4 and a fifth output port P5 are arranged on one side of the middle layer dielectric substrate on the same side of the opening of the third resonator 8, and the first input port P1 is independently positioned on one side of the middle layer dielectric substrate;
The first input port P1, the second output port P2 and the fourth output port P4 are respectively connected with one side of the first resonator 6 close to the first input port P1, one side of the first resonator close to the second output port P2 and one side of the fourth output port P4 through a first microstrip line 1, a second microstrip line 2 and a fourth microstrip line 4, the third output port P3 is connected with an opening of the second resonator 7 through a third microstrip line 3, and the fifth output port P5 is connected with an opening of the third resonator 8 through a fifth microstrip line 5; all microstrip lines are connected with the resonator in a capacitive coupling mode; the through holes of the resonator are all metalized through holes, and the through holes penetrate through the middle-layer dielectric substrate and are connected with the lower-layer grounding metal.
Further preferably, the first microstrip line 1, the second microstrip line 2, the third microstrip line 3, the fourth microstrip line 4, and the fifth microstrip line 5 are all microstrip lines with a resistance value of 50 ohms.
further preferably, the lengths of the second microstrip line 2, the third microstrip line 3, the fourth microstrip line 4, and the fifth microstrip line 5 are the same.
further preferably, the resonance mode of the first resonator 6 is TE201, and the resonance mode of the second resonator 7 and the third resonator 8 is TE 101.
More preferably, the dielectric constant of the dielectric substrate is 2 to 16, and the height of the dielectric substrate is 0.1 to 4 mm.
The working principle of the feed power distribution network is as follows: the mode of the full-mode resonant cavity is TE201, because the two energy electric fields of the TE201 mode resonance are opposite in direction, the phase difference between 0 degrees and 180 degrees is obtained, the 0-degree phase signal is divided into two paths, one path is directly output to obtain 0-degree phase signal output, and the other path is connected with the half-mode substrate integrated waveguide of which the resonance mode is TE101, so that the phase is delayed by 90 degrees, and-90-degree phase signal output is obtained; the 180-degree phase signals are also divided into two paths, one path is directly output to obtain 180-degree phase difference signals, and the other path is connected with a half-mode substrate integrated waveguide with the resonance mode of TE101, so that the phase is delayed by 90 degrees, and 90-degree phase signals are output. And finally, four paths of output signals with the difference of 90 degrees between every two adjacent output ports are obtained.
The present invention will be described in further detail with reference to examples.
Examples
The dielectric constant of the dielectric plate used in this embodiment is 2.2, the thickness of the dielectric plate is 0.508mm, and for an operating frequency of 10GHz, the dimensions of the upper layer circuit structure are as shown in fig. 2, the diameter of the metalized through hole is 1mm, the hole pitch is 2mm, the width a1 of the first input port coupling is 6mm, the width a2 of the second output port coupling is 3.5mm, the width a3 of the third output port coupling is 2.4mm, the width a4 of the fourth output port coupling is 3mm, the width a5 of the fifth output port coupling is 3.2mm, the length ll1 of the first microstrip line is 18.5mm, the length ll2 of the second microstrip line, the length ll3 of the third microstrip line, the length ll4 of the fourth microstrip line and the length ll5 of the fifth microstrip line are equal, which are 15.4mm, the widths of all microstrip lines are equal, w is 1.55mm, the length wl1 of the first resonator is 27.1mm, the thickness of the fourth microstrip line is 585 mm, and the width of the third resonator is equal to the width of the third resonator 13 mm, wl 2-12 mm, ww 2-12.38 mm, and the degree of windowed coupling of the first resonator 6 to the second resonator 7 is the same as the degree of windowed coupling of the first resonator 6 to the second resonator 8, i.e. wc 1-wc 2-7 mm.
The present embodiment performs modeling simulation in electromagnetic simulation software hfss.18. Fig. 3 is a simulation diagram of S parameters of the power divider network, and it can be seen from the diagram that when the power divider operates at 10GHz, the-20 dB bandwidth of S11 is 9.89GHz-10.08GHz, and the relative bandwidth is 1.9%, and as can be seen from fig. 4 and 5, in the frequency band of 9.89GHz-10.08GHz, the amplitudes of S21, S31, S41, and S51 are 6dB ± 1dB, the phase difference between the second output port and the third output port is 90 ° ± 10 °, the phase difference between the second output port and the fourth output port is 180 ° ± 10 °, and the phase difference between the second output port and the fifth output port is 270 ° ± 15 °.
In summary, the sequential feed power distribution network based on the substrate integrated waveguide has the advantages of good circuit performance, simple structure, small volume, easy processing and easy realization of circuit integration and system packaging.

Claims (5)

1. A sequential feed power distribution network based on substrate integrated waveguide is characterized by comprising an upper layer circuit structure, a middle layer dielectric substrate and a lower layer grounding metal; the upper layer circuit structure is attached to the upper surface of the middle layer dielectric substrate, and the grounding metal is attached to the lower surface of the middle layer dielectric substrate;
A first resonator (6), a second resonator (7) and a third resonator (8) are arranged on the upper surface of the middle-layer dielectric substrate, the first resonator (6) is a full-mode rectangular substrate integrated waveguide resonant cavity, and the second resonator (7) and the third resonator (8) are both half-mode substrate integrated waveguide resonant cavities; the second resonator (7) and the third resonator (8) are respectively positioned at the oblique diagonal angle of the first resonator (6), and one side of the second resonator (7) opposite to the opening thereof and one side of the third resonator (8) opposite to the opening thereof are connected with the first resonator (6) in a windowing coupling mode; a second output port (P2) and a third output port (P3) are arranged on one side of the middle layer dielectric substrate on the same side of the opening of the second resonator (7), a fourth output port (P4) and a fifth output port (P5) are arranged on one side of the middle layer dielectric substrate on the same side of the opening of the third resonator (8), and the first input port (P1) is independently positioned on one side of the middle layer dielectric substrate;
The first input port (P1), the second output port (P2) and the fourth output port (P4) are respectively connected with one side, close to the first input port (P1), one side, close to the second output port (P2) and one side, close to the fourth output port (P4) on the first resonator (6) through a first microstrip line (1), a second microstrip line (2) and a fourth microstrip line (4), the third output port (P3) is connected with an opening of the second resonator (7) through a third microstrip line (3), and the fifth output port (P5) is connected with an opening of the third resonator (8) through a fifth microstrip line (5); all microstrip lines are connected with the resonator in a capacitive coupling mode; the through holes of the resonator are all metalized through holes, and the through holes penetrate through the middle-layer dielectric substrate and are connected with the lower-layer grounding metal.
2. The substrate integrated waveguide-based sequential feed power division network according to claim 1, wherein the first microstrip line (1), the second microstrip line (2), the third microstrip line (3), the fourth microstrip line (4) and the fifth microstrip line (5) are all microstrip lines with a resistance of 50 ohms.
3. The substrate integrated waveguide based sequential feed power division network according to claim 1 or 2, wherein the lengths of the second microstrip line (2), the third microstrip line (3), the fourth microstrip line (4) and the fifth microstrip line (5) are the same.
4. The substrate integrated waveguide based sequential feed power division network of claim 1, wherein the resonant mode of the first resonator (6) is TE201, and the resonant modes of the second resonator (7) and the third resonator (8) are TE 101.
5. The substrate integrated waveguide-based sequential feed power distribution network according to claim 1, wherein the dielectric substrate has a dielectric constant of 2-16 and a height of 0.1-4 mm.
CN201910760362.3A 2019-08-16 2019-08-16 Sequential feed power distribution network based on substrate integrated waveguide Active CN110581335B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910760362.3A CN110581335B (en) 2019-08-16 2019-08-16 Sequential feed power distribution network based on substrate integrated waveguide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910760362.3A CN110581335B (en) 2019-08-16 2019-08-16 Sequential feed power distribution network based on substrate integrated waveguide

Publications (2)

Publication Number Publication Date
CN110581335A true CN110581335A (en) 2019-12-17
CN110581335B CN110581335B (en) 2021-06-08

Family

ID=68811612

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910760362.3A Active CN110581335B (en) 2019-08-16 2019-08-16 Sequential feed power distribution network based on substrate integrated waveguide

Country Status (1)

Country Link
CN (1) CN110581335B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113193323A (en) * 2021-05-04 2021-07-30 南通大学 Half-mode substrate integrated waveguide-based four-way unequal power division filtering power divider

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103337678A (en) * 2013-06-26 2013-10-02 东南大学 Crossed coupling substrate integrated waveguide filter with steep side band characteristic
CN105811064A (en) * 2014-12-31 2016-07-27 南京理工大学 Gysel-type power divider based on substrate integrated waveguide
CN107317075A (en) * 2017-06-14 2017-11-03 南京理工大学 The duplexer of chamber is shared based on rectangle substrate integrated waveguide

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103337678A (en) * 2013-06-26 2013-10-02 东南大学 Crossed coupling substrate integrated waveguide filter with steep side band characteristic
CN105811064A (en) * 2014-12-31 2016-07-27 南京理工大学 Gysel-type power divider based on substrate integrated waveguide
CN107317075A (en) * 2017-06-14 2017-11-03 南京理工大学 The duplexer of chamber is shared based on rectangle substrate integrated waveguide

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DONG-FANG GUAN 等: ""Wide-Band SIW Cavity-Backed Circular Polarized Array Antennas with Sequential Rotation Technique"", 《2016 INTERNATIONAL CONFERENCE ON ELECTROMAGNETICS IN ADVANCED APPLICATIONS (ICEAA)》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113193323A (en) * 2021-05-04 2021-07-30 南通大学 Half-mode substrate integrated waveguide-based four-way unequal power division filtering power divider
CN113193323B (en) * 2021-05-04 2021-10-29 南通大学 Half-mode substrate integrated waveguide-based four-way unequal power division filtering power divider

Also Published As

Publication number Publication date
CN110581335B (en) 2021-06-08

Similar Documents

Publication Publication Date Title
CN113054425B (en) Millimeter wave dual-frequency dual-polarization filtering antenna
CN103441340B (en) Variable and half-module substrate integrated waveguide leaky-wave antenna frequency scanning polarizes
CN109980366B (en) Broadband dual-circular-polarization end-fire array antenna based on gap waveguide
CN108110436B (en) Waveguide feed network and waveguide array antenna
CN113809518A (en) Microwave and millimeter wave large-frequency ratio common-aperture antenna with high isolation
CN114188688B (en) Miniaturized coaxial waveguide orthogonal mode coupler
CN106856260B (en) Miniaturized broadband dual-polarized antenna feed network
CN113178687B (en) Circularly polarized waveguide slot antenna
CN110581335B (en) Sequential feed power distribution network based on substrate integrated waveguide
CN108172994B (en) Dual-polarized broadband antenna device based on dielectric integrated coaxial line
CN107819201B (en) A kind of compact gradual change slot array antenna suitable for 5G millimetre-wave attenuator
CN114335999A (en) K/Ka waveband dual-band dual-circularly-polarized antenna based on gap waveguide
CN105720357A (en) Circularly polarized antenna
CN111224236B (en) Broadband circularly polarized microstrip antenna array
CN110943294B (en) Broadband low-profile dual-circular-polarization panel antenna
CN112768863A (en) HMSIW-based K-waveband novel power divider and design method thereof
CN115458892B (en) Four-way in-phase unequal power divider based on circular SIW resonant cavity
CN116130979A (en) Low-sidelobe back cavity slot array antenna
CN112531355B (en) +/-45-degree dual-polarized millimeter wave array antenna
CN210379359U (en) Novel 90-degree broadband differential phase shifter
CN113097730A (en) Three-mode OAM antenna based on electromagnetic band gap and design method thereof
CN114824715B (en) W-band filtering power divider based on rectangular micro-coaxial structure
CN111244619A (en) Patch array antenna based on air substrate integrated waveguide
CN112563711B (en) Rectangular patch-half-mode substrate integrated waveguide hybrid 90-degree directional coupler
CN115395191B (en) Wide-stop-band substrate integrated waveguide filter based on hybrid coupling

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant