CN113054425B - Millimeter wave dual-frequency dual-polarization filtering antenna - Google Patents
Millimeter wave dual-frequency dual-polarization filtering antenna Download PDFInfo
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- CN113054425B CN113054425B CN202110284904.1A CN202110284904A CN113054425B CN 113054425 B CN113054425 B CN 113054425B CN 202110284904 A CN202110284904 A CN 202110284904A CN 113054425 B CN113054425 B CN 113054425B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
- H01Q1/526—Electromagnetic shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
- H01Q13/18—Resonant slot antennas the slot being backed by, or formed in boundary wall of, a resonant cavity ; Open cavity antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/20—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements characterised by the operating wavebands
- H01Q5/28—Arrangements for establishing polarisation or beam width over two or more different wavebands
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/50—Feeding or matching arrangements for broad-band or multi-band operation
Abstract
The invention discloses a millimeter wave dual-frequency dual-polarized filter antenna which comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a third metal layer, a third dielectric layer, a fourth metal layer, a fourth dielectric layer, a fifth metal layer, a fifth dielectric layer and a sixth metal layer which are sequentially stacked from top to bottom. The first metal layer and the second metal layer are provided with a microstrip square ring radiation unit, a parasitic coupling strip and a radiation back cavity, the fourth metal layer is provided with a totally-enclosed quarter-mode substrate integrated waveguide resonant cavity and a strip line feeder, and the sixth metal layer is provided with a microstrip line feeder. A resonant cavity gap is loaded on the totally-enclosed quarter-mode substrate integrated waveguide resonant cavity so as to conveniently adjust the dual-mode resonant frequency. The invention can realize millimeter wave dual-frequency dual-polarization radiation, respectively realize three-order filter response on two frequency bands, inhibit the out-of-band energy leakage of the antenna and improve the frequency selectivity of the antenna.
Description
Technical Field
The invention relates to the field of microwave and millimeter wave antennas, in particular to a millimeter wave dual-frequency dual-polarization filtering antenna.
Background
With the rapid development of the fifth generation mobile communication (5G) technology, millimeter wave systems are required to have more complex functions, higher electrical performance indexes, smaller volume and lighter weight. The millimeter wave antenna with the integrated filtering function can effectively inhibit the influence of out-of-band noise on the system, reduce the index requirements of a receiving and transmitting system on a filter, and realize the miniaturization and high performance of the system. Meanwhile, the dual-frequency dual-polarized antenna can effectively improve the data throughput of the system and realize high-speed communication. Therefore, the millimeter wave dual-frequency dual-polarization filtering antenna has important significance for the 5G millimeter wave communication technology.
For the millimeter wave filtering antenna technology, the related experts and scholars have conducted extensive research and have achieved a series of academic and technical achievements. However, with the disclosed millimeter wave antenna, implementing a dual-frequency dual-polarized filtering antenna in a limited space remains a problem. At present, most dual-polarized filter antenna designs only support a single frequency band, and for 5G millimeter wave dual-frequency application, there is still room for improvement.
Disclosure of Invention
The technical problem is as follows: the invention aims to provide a millimeter wave dual-frequency dual-polarized filter antenna which can improve the bandwidth of dual-frequency impedance and inhibit out-of-band radiation.
The technical scheme is as follows: in order to achieve the purpose, the millimeter wave dual-frequency dual-polarization filtering antenna adopts the following technical scheme:
the millimeter wave dual-frequency dual-polarized filter antenna comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a third metal layer, a third dielectric layer, a fourth metal layer, a fourth dielectric layer, a fifth metal layer, a fifth dielectric layer and a sixth metal layer which are sequentially stacked from top to bottom; the waveguide resonant cavity comprises a first metal layer, a second metal layer, a third metal layer, a fourth metal layer and a third metal layer, wherein a top layer low-frequency microstrip radiation unit and a top layer high-frequency microstrip radiation unit are arranged on the first metal layer, an inner layer low-frequency microstrip radiation unit and an inner layer high-frequency microstrip radiation unit are arranged on the second metal layer, two rectangular grooves which are vertically arranged are arranged in the third metal layer, two third metal layer anti-bonding pads are formed, and a strip line feeder line and a totally-enclosed quarter-mode substrate integrated waveguide resonant cavity are arranged on the fourth metal layer; and a fifth metal layer reverse bonding pad is arranged on the fifth metal layer to prevent the metalized through hole from being short-circuited with the fifth metal layer, and a microstrip line feeder line on the sixth metal layer is provided with a left feed port as a first port and a right feed port as a second port.
Wherein:
the top-layer high-frequency microstrip radiating unit is arranged in the center of the first metal layer, the top-layer low-frequency microstrip radiating unit is located on the periphery of the top-layer high-frequency microstrip radiating unit, metallized back cavity holes are arranged on the periphery of the top-layer low-frequency microstrip radiating unit in a square arrangement mode, and parasitic coupling strips are arranged between four corners of the top-layer low-frequency microstrip radiating unit and the metallized back cavity holes.
The second metal layer is internally provided with an inner-layer high-frequency micro-strip radiation unit, the inner-layer low-frequency micro-strip radiation unit is positioned at the periphery of the inner-layer high-frequency micro-strip radiation unit, metallized back cavity holes are arranged at the periphery of the inner-layer low-frequency micro-strip radiation unit in a square shape, and parasitic coupling strips are arranged between the four corners of the inner-layer low-frequency micro-strip radiation unit and the metallized back cavity holes.
Two rectangular grooves which are vertically arranged are arranged in the third metal layer and are used for realizing the coupling of a totally-enclosed quarter-mode substrate integrated waveguide resonant cavity in two polarized strip line feed networks to an inner-layer low-frequency microstrip radiation unit and an inner-layer high-frequency microstrip radiation unit; two third metal layer anti-bonding pads are also formed on the third metal layer to prevent the metalized through hole from being short-circuited with the third metal layer; the metallized vias enable the connection of two polarized microstrip feed lines to the strip feed line.
The fourth metal layer comprises two groups of inner layer feed networks, and each group of strip line feed networks comprises a metalized shielding hole, a strip line feed line and a totally-enclosed quarter-mode substrate integrated waveguide resonant cavity; the metallized shielding hole penetrates through the third metal layer, the third dielectric layer, the fourth metal layer, the fourth dielectric layer, the fifth metal layer, the fifth dielectric layer and the sixth metal layer and is used for shielding the millimeter wave dual-frequency dual-polarized filter antenna feed network; a strip line feeder is directly connected with the totally-enclosed quarter-mode substrate integrated waveguide resonant cavity for feeding; the totally-enclosed quarter-mode substrate integrated waveguide resonant cavity is completely surrounded by the metallized shielding hole, the third metal layer and the fifth metal layer; the totally-enclosed quarter-mode substrate integrated waveguide resonant cavity is loaded with a resonant cavity gap, and the totally-enclosed quarter-mode substrate integrated waveguide resonant cavity is also loaded with a middle through hole and a resonant cavity anti-bonding pad.
And a fifth metal layer reverse bonding pad is arranged on the fifth metal layer, and a metalized through hole is arranged in the middle of the fifth metal layer reverse bonding pad.
And a microstrip line feeder is arranged on the sixth metal layer and is connected with a strip line feeder on the fourth metal layer through a metalized through hole, the microstrip line feeder is used as a feed port of the dual-polarized antenna, the left feed port is a port I, and the right feed port is a port II.
The top layer low-frequency microstrip radiating element and the inner layer low-frequency microstrip radiating element are provided with parasitic coupling stripes which are arranged at four vertexes, so that the coupling strength is increased.
Has the beneficial effects that: the invention discloses a millimeter wave dual-frequency dual-polarization filtering antenna, which can realize dual-frequency dual-polarization radiation of a millimeter wave antenna, inhibit radiation outside a dual-frequency working frequency band of the antenna relative to the prior art and improve the frequency selectivity of the antenna.
Drawings
FIG. 1 is a side view of an antenna according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a layered structure of an antenna according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a first metal layer of an antenna according to an embodiment of the present invention;
FIG. 4 is a diagram illustrating a second metal layer of an antenna according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a third metal layer of the antenna according to the embodiment of the invention;
fig. 6 is a schematic structural diagram of a fourth metal layer of the antenna according to the embodiment of the invention;
FIG. 7 is a diagram illustrating a fifth metal layer of an antenna according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of a sixth metal layer of an antenna according to an embodiment of the present invention;
FIG. 9 is a diagram illustrating S-parameter simulation results of an antenna according to an embodiment of the present invention;
FIG. 10 is a graph of simulation results of the gain curve of the antenna according to the embodiment of the present invention;
FIG. 11 is a simulation result of a normalized pattern at 26GHz for port one of the antennas in accordance with an embodiment of the present invention;
FIG. 12 is a simulation result of a normalized pattern of port two of the antenna at 26GHz according to an embodiment of the present invention;
FIG. 13 is a simulation result of a normalized pattern at 39GHz for port one of the antennas in accordance with an embodiment of the present invention;
fig. 14 is a simulation result of the normalized pattern of the second port of the antenna at 39GHz in the embodiment of the present invention.
The figure has the following components: the antenna comprises a first metal layer 1, a first medium layer 2, a second metal layer 3, a second medium layer 4, a third metal layer 5, a third medium layer 6, a fourth metal layer 7, a fourth medium layer 8, a fifth metal layer 9, a fifth medium layer 10, a sixth metal layer 11, a top-layer low-frequency microstrip radiating unit 12, a top-layer high-frequency microstrip radiating unit 13, an inner-layer low-frequency microstrip radiating unit 14, an inner-layer high-frequency microstrip radiating unit 15, a parasitic coupling strip 16, a totally-enclosed quarter-mode substrate integrated waveguide resonant cavity 17, a rectangular groove 18, a coaxial protection hole 19, a metalized through hole 20, a microstrip line feeder 21, a metalized back cavity hole 22, a stripline feed network 23, a third metal layer anti-pad 24, a shielding hole 25, a stripline feeder 26, a resonant cavity gap 27, a middle through hole 28, a resonant cavity anti-pad 29, a fifth metal layer anti-pad 30, a port one 31 and a port two 32.
Detailed Description
The technical solution of the present invention will be further described with reference to the following detailed description and accompanying drawings.
The specific embodiment discloses a millimeter wave dual-frequency dual-polarization filtering antenna, which comprises a first metal layer 1, a first dielectric layer 2, a second metal layer 3, a second dielectric layer 4, a third metal layer 5, a third dielectric layer 6, a fourth metal layer 7, a fourth dielectric layer 8, a fifth metal layer 9, a fifth dielectric layer 10 and a sixth metal layer 11, which are sequentially stacked from top to bottom, as shown in fig. 1 and 2. The first dielectric layer 2 may be a dielectric substrate with a thickness of 1.016mm, the second dielectric layer 4 and the fourth dielectric layer 8 may be prepregs with a thickness of 0.2mm, and the third dielectric layer 6 and the fifth dielectric layer 10 may be dielectric substrates with a thickness of 0.203 mm.
As shown in fig. 3, a top low-frequency microstrip radiating element 12 and a top high-frequency microstrip radiating element 13 are disposed in the center of the first metal layer 1. As shown in fig. 4, the second metal layer 3 is centrally provided with an inner low-frequency microstrip radiating element 14 and an inner high-frequency microstrip radiating element 15. The top low frequency microstrip radiating element 12 and the inner low frequency microstrip radiating element 14 are further coupled by parasitic coupling strips 16 placed at four vertices. The metallized back cavity holes 22 penetrating through the first metal layer 1, the first dielectric layer 2 and the fourth metal layer 3 are arranged in a square shape to form a back cavity of the antenna.
As shown in fig. 5, two rectangular grooves 18 are etched on the third metal layer 5 for coupling the fully-enclosed quarter-mode substrate integrated waveguide resonant cavity 17 in the two polarized stripline feed networks 23 to the inner-layer low-frequency microstrip radiating element 14 and the inner-layer high-frequency microstrip radiating element 15. The metallized vias 20 enable the connection of two polarized microstrip feed lines 26 to the strip feed line 21. The quasi-coaxial guard holes 19 surround the metalized via 20 preventing lateral energy leakage from the metalized via 20. Two third-metal-layer anti-pads 24 are opened on the third metal layer 5 to prevent the metalized via 20 and the third metal layer 5 from short-circuiting.
As shown in fig. 6, the fourth metal layer 7 contains two sets of inner feeding networks for realizing feeding of two polarizations. Each set of stripline feed networks 23 includes a strip metalized shielding hole 25, a stripline feed 26, and a fully enclosed quarter-mode substrate integrated waveguide resonant cavity 17. The metallized shielding hole 25 penetrates through the third metal layer 5, the third dielectric layer 6, the fourth metal layer 7, the fourth dielectric layer 8, the fifth metal layer 9, the fifth dielectric layer 10 and the sixth metal layer 11, and is used for shielding the millimeter wave dual-frequency dual-polarized filter antenna feed network. The strip line feeder 26 is directly connected with the totally-enclosed quarter-mode substrate integrated waveguide resonant cavity 17 for feeding. The totally-enclosed quarter-mode substrate integrated waveguide resonant cavity 17 is completely surrounded by the metallized shielding hole 25, the third metal layer 5 and the fifth metal layer 9, and radiation loss is eliminated. The totally-enclosed quarter-mode substrate integrated waveguide resonator 17 is loaded with a resonator gap 27 to facilitate adjustment of the two-mode resonance frequency. The totally-enclosed quarter-mode substrate integrated waveguide resonant cavity 17 is also loaded with a middle through hole 28 and a resonant cavity anti-bonding pad 29, so that the parasitics of other resonant modes are prevented.
As shown in fig. 7, a fifth metal layer anti-pad 30 is opened on the fifth metal layer 9 to prevent the metalized via 20 and the fifth metal layer 9 from short-circuiting.
As shown in fig. 8, a microstrip line feeder 21 is disposed on the sixth metal layer 11, and the microstrip line feeder 21 is connected to the strip line feeder 21 on the fourth metal layer 7 through a metalized via 20 passing through the third metal layer 5, the third dielectric layer 6, the fourth metal layer 7, the fourth dielectric layer 8, the fifth metal layer 9, the fifth dielectric layer 10, and the sixth metal layer 11, and serves as a feed port of the dual-polarized antenna. The left feed port is port one 31 and the right feed port is port two 32.
The working principle of the invention is as follows: the signal is conducted through microstrip feed line 21, metallized via 20, to stripline feed network 23. The strip line feeder 26 directly feeds the totally-enclosed quarter-mode substrate integrated waveguide resonant cavity 17, and the totally-enclosed quarter-mode substrate integrated waveguide resonant cavity 17 is coupled with the inner-layer low-frequency microstrip radiating unit 14 and the inner-layer high-frequency microstrip radiating unit 15 through the rectangular groove 18. And near 26GHz, the totally-enclosed quarter-mode substrate integrated waveguide resonant cavity 17, the inner-layer low-frequency microstrip radiating unit 14 and the top-layer low-frequency microstrip radiating unit 12 working in the first mode form three resonators, so that the working effect of three-order filtering is realized in a millimeter wave low-frequency band. And near 39GHz, the totally-enclosed quarter-mode substrate integrated waveguide resonant cavity 17, the inner-layer high-frequency microstrip radiating unit 15 and the top-layer high-frequency microstrip radiating unit 13 working in the second mode form three resonators, so that the working effect of three-order filtering is realized in a millimeter wave high-frequency band. The two groups of microstrip line feed lines 21, the metalized through holes 20 and the strip line feed network 23 are used for realizing feed of two different polarizations, the two groups of different polarizations share the inner-layer low-frequency microstrip radiation unit 14 and the top-layer low-frequency microstrip radiation unit 12 as low-frequency radiation structures, and share the inner-layer high-frequency microstrip radiation unit 15 and the top-layer high-frequency microstrip radiation unit 13 as high-frequency radiation structures.
Fig. 9 is a diagram showing simulation results of S-parameters of the antenna. The simulation result shows that the antenna has good return loss at 24.25-27.5GHz and 37-40GHz, and the isolation in the two frequency bands is respectively better than-21 dB and-28 dB.
Fig. 10 is a graph showing a simulation result of a gain curve of the antenna. From the simulation results, it can be seen that the antenna has flat gain in both frequency bands, with better suppression out of band.
Fig. 11-14 are simulation results of normalized patterns of the XOZ and YOZ planes of the antenna at 26GHz and 39 GHz. The simulation results show that the cross polarization component is more than 25dB less than the co-polarization component at 26GHz and 39 GHz.
The millimeter wave dual-frequency dual-polarized antenna provided by the invention has the characteristics of compact structure, wider dual-frequency impedance bandwidth, better antenna gain filtering response, higher orthogonal polarization discrimination and the like, can realize a miniaturized millimeter wave dual-frequency dual-polarized filtering antenna, and is directly integrated with a 5G millimeter wave radio frequency multichannel chip.
Claims (2)
1. A millimeter wave dual-frequency dual-polarization filtering antenna is characterized in that: the metal-clad plate comprises a first metal layer (1), a first dielectric layer (2), a second metal layer (3), a second dielectric layer (4), a third metal layer (5), a third dielectric layer (6), a fourth metal layer (7), a fourth dielectric layer (8), a fifth metal layer (9), a fifth dielectric layer (10) and a sixth metal layer (11) which are sequentially laminated from top to bottom; the antenna comprises a first metal layer (1), a second metal layer (3), a third metal layer (7) and a fourth metal layer (1), wherein a top-layer low-frequency micro-strip radiation unit (12) and a top-layer high-frequency micro-strip radiation unit (13) are arranged on the first metal layer (1), an inner-layer low-frequency micro-strip radiation unit (14) and an inner-layer high-frequency micro-strip radiation unit (15) are arranged on the second metal layer (3), two rectangular grooves (18) which are vertically arranged are formed in the third metal layer (5), two third metal layer anti-bonding pads (24) are formed, and a strip line feeder line (26) and a fully-closed quarter-mode substrate integrated waveguide resonant cavity (17) are arranged on the fourth metal layer (7); a fifth metal layer anti-pad (30) is arranged on the fifth metal layer (9) to prevent the metalized through hole (20) from being short-circuited with the fifth metal layer (9), a microstrip line feeder line (21) is arranged on the sixth metal layer (11), a left side feed port is a first port (31), and a right side feed port is a second port (32);
a top-layer high-frequency micro-strip radiation unit (13) is arranged in the center of the first metal layer (1), a top-layer low-frequency micro-strip radiation unit (12) is located on the periphery of the top-layer high-frequency micro-strip radiation unit (13), metallized back cavity holes (22) formed in the periphery of the top-layer low-frequency micro-strip radiation unit (12) are arranged in a square mode, and parasitic coupling strips (16) are arranged between four corners of the top-layer low-frequency micro-strip radiation unit (12) and the metallized back cavity holes (22);
an inner-layer high-frequency microstrip radiation unit (15) is arranged in the second metal layer (3), an inner-layer low-frequency microstrip radiation unit (14) is positioned at the periphery of the inner-layer high-frequency microstrip radiation unit (15), metallized back cavity holes (22) formed in the periphery of the inner-layer low-frequency microstrip radiation unit (14) are arranged in a square shape, and parasitic coupling strips (16) are arranged between four corners of the inner-layer low-frequency microstrip radiation unit (14) and the metallized back cavity holes (22);
two rectangular grooves (18) which are vertically arranged are arranged in the third metal layer (5) and are used for realizing the coupling of a totally-enclosed quarter-mode substrate integrated waveguide resonant cavity (17) in two polarized strip line feed networks (23) to an inner-layer low-frequency microstrip radiating unit (14) and an inner-layer high-frequency microstrip radiating unit (15); preventing the metallized through hole (20) from short-circuiting with the third metal layer (5);
the fourth metal layer (7) comprises two groups of strip line feed networks, and each group of strip line feed networks (23) comprises a metalized shielding hole (25), a strip line feed line (26) and a totally-enclosed quarter-mode substrate integrated waveguide resonant cavity (17); the metallized shielding hole (25) penetrates through the third metal layer (5), the third dielectric layer (6), the fourth metal layer (7), the fourth dielectric layer (8), the fifth metal layer (9), the fifth dielectric layer (10) and the sixth metal layer (11) and is used for shielding the millimeter wave dual-frequency dual-polarization filter antenna feed network; a strip line feeder (26) is directly connected with the totally-enclosed quarter-mode substrate integrated waveguide resonant cavity (17) for feeding; the totally-enclosed quarter-mode substrate integrated waveguide resonant cavity (17) is completely surrounded by the metallized shielding hole (25), the third metal layer (5) and the fifth metal layer (9); a resonant cavity gap (27) is loaded on the totally-enclosed quarter-mode substrate integrated waveguide resonant cavity (17), and a middle through hole (28) and a resonant cavity anti-bonding pad (29) are also loaded on the totally-enclosed quarter-mode substrate integrated waveguide resonant cavity (17);
a fifth metal layer reverse bonding pad (30) is arranged on the fifth metal layer (9), and a metalized through hole (20) is arranged in the middle of the fifth metal layer reverse bonding pad (30);
and a microstrip line feeder line (21) is arranged on the sixth metal layer (11), the microstrip line feeder line (21) is connected with a strip line feeder line on the fourth metal layer (7) through a metalized through hole (20), and the microstrip line feeder line (21) is used as a feed port of the dual-polarized antenna.
2. The millimeter wave dual-frequency dual-polarized filtering antenna of claim 1, wherein: the top layer low-frequency microstrip radiating element (12) and the inner layer low-frequency microstrip radiating element (14) are provided with coupling strength increased through parasitic coupling strips (16) placed at four vertexes.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US11817630B2 (en) * | 2021-09-17 | 2023-11-14 | City University Of Hong Kong | Substrate integrated waveguide-fed Fabry-Perot cavity filtering wideband millimeter wave antenna |
| CN113871902B (en) * | 2021-09-24 | 2022-10-25 | 西安电子科技大学 | MIMO multi-cavity butterfly filter antenna based on SIW structure |
| CN113964483A (en) * | 2021-10-20 | 2022-01-21 | 维沃移动通信有限公司 | Electronic device |
| CN113991294B (en) * | 2021-11-02 | 2024-02-13 | 东南大学 | Millimeter wave dual polarized antenna unit |
| CN114069214B (en) * | 2021-11-18 | 2023-07-18 | 安徽大学 | 5G millimeter wave dual-band antenna based on dual-ring structure |
| CN114340139A (en) * | 2021-11-29 | 2022-04-12 | 华为技术有限公司 | Circuit board and electronic equipment |
| CN116259956A (en) * | 2021-12-09 | 2023-06-13 | 华为技术有限公司 | Antenna structure and electronic equipment |
| CN114374085B (en) * | 2021-12-09 | 2023-07-21 | 南通大学 | Dual-polarized hybrid antenna for 5G millimeter wave dual-band application |
| CN114400425B (en) * | 2021-12-29 | 2023-02-03 | 杭州电子科技大学 | Microwave and millimeter wave dual-band filtering cross junction |
| CN114614257B (en) * | 2022-05-11 | 2022-07-29 | 电子科技大学 | Planar high-isolation K/Ka frequency band common-caliber phased array antenna |
| CN114843756A (en) * | 2022-06-02 | 2022-08-02 | 上海卷积通讯技术有限公司 | Navigation full-band high-precision air coupling antenna |
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| US8350771B1 (en) * | 2009-06-02 | 2013-01-08 | The United States Of America, As Represented By The Secretary Of The Navy | Dual-band dual-orthogonal-polarization antenna element |
| CN109037930B (en) * | 2018-07-13 | 2020-09-11 | 东南大学 | Broadband array antenna based on laminated microstrip and substrate integrated waveguide feed |
| CN110011043B (en) * | 2019-04-12 | 2023-12-01 | 华南理工大学 | Four-frequency dual polarized antenna and wireless communication device |
| CN110797640B (en) * | 2019-11-07 | 2021-09-07 | 西安电子工程研究所 | Ka frequency band broadband low-profile dual-linear polarization microstrip antenna based on high-frequency lamination technology |
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| CN109301486A (en) * | 2018-10-18 | 2019-02-01 | 广东工业大学 | Across the frequency band double-frequency dual-polarization radiating unit of single layer patch type microwave and millimeter wave for 5G mobile communication |
| CN110649380A (en) * | 2019-09-29 | 2020-01-03 | 北京中石伟业科技股份有限公司 | Millimeter wave broadband filtering antenna |
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