CN105811064A - Gysel-type power divider based on substrate integrated waveguide - Google Patents

Abstract

The invention discloses a Gysel-type power divider based on a substrate integrated waveguide, and the power divider comprises a first port, a second port, a third port, a fourth port, and a fifth port. The first port is disposed on a central line of the power divider, and the power divider is symmetric relative to the central line. The first port is a common port, and the second and third ports are branch ports. The fourth and fifth ports are load ports. The power divider employs a substrate integrated waveguide structure, and comprises an upper metal surface, a central dielectric plate, and a lower metal surface. Two rows of second metal post line columns are disposed between the upper metal surface and the lower metal surface. Each row of second metal post line columns comprises a plurality of metal columns, and each metal column contacts with the upper metal surface and the lower metal surface. The power divider meets the actual demands of high power and high isolation, is small in size, is light in weight, and is suitable for the power combination and distribution of various types of SIW systems.

Description

Gysel type power splitter based on substrate integration wave-guide

Technical field

The invention belongs to power splitter field, particularly a kind of Gysel type power splitter based on substrate integration wave-guide.

Background technology

Power splitter is the significant components in Modern Communication System, is widely used in the systems such as microwave communication, electronic countermeasure, frequency synthesis and microwave measurement.Power splitter is mainly used in the distribution of energy, synthesis, generally has a total mouth, plural point of mouth, according to the quantity of point mouth can be divided into one-to-two, one point three, one point more than four and one points；Whether just the same according to point mouth power, it is possible to be divided into decile and not decile two kinds；Whether the same according to point mouth phase place, it is possible to be divided into and wait mutually and do not wait phase two kinds；Small-power, middle power and high power etc. can be divided into according to power capacity；Microstrip type, coaxial type, waveguide type etc. can be divided into according to transmission line form；Whether isolate according to a point mouth and can be divided into isolated form and not isolated form；Welkinson (Wilkinson), Gysel (Jie Saier), branch line and directional coupler etc. can be divided into according to version.

The planar structure that application substrate integration wave-guide and SIW (SubstrateIntegratedWaveguide) realize, the advantage having merged rectangular waveguide and microstrip line, there is the advantage that volume is little, lightweight, relative bandwidth is wider, higher power threshold can be born simultaneously, Q-value is also higher, theoretical and experiment all shows that this kind of planar structure has very prominent advantage, therefore well can be applied in microwave and millimeter wave circuit, hydrid integrated circuit (HMIC) and millimeter wave monolithic integrated circuit (MMIC).nullSimultaneously，Also there is more and more introduction about chip integrated waveguide power distributor，Such as document 1 (" Y junctionpowerdividerbasedonsubstrateintegratedwaveguide "，Or document 2 (" MultilayerSubstrateIntegratedWaveguideFour WayOut of PhasePowerDivider " ElectronicsLetters8thDec.2011Vol.47No.25)，IEEETransactionsonMicrowaveTechnologyandTechniques，Vol.57，No.12，Dec2009，pp3469‐3476)；But, this kind of power splitter main disadvantage is that, with reference to traditional Wilkinson power divider, isolation resistance is positioned at the center of point arm, thus high power cannot be born, and due to the ghost effect of isolation resistance, it is impossible to work is to significantly high frequency；On the other hand, based on traditional waveguide form, it is impossible to isolation, or multilayer circuit is needed to isolate；These shortcomings have impact on the application at high power of this type of power splitter.

Summary of the invention

It is an object of the invention to provide a kind of Gysel type power splitter based on substrate integration wave-guide.

The technical solution realizing the object of the invention is: a kind of Gysel type power splitter based on substrate integration wave-guide, including the first port, the second port, the 3rd port, the 4th port and fifth port；Described first port is on the middle separated time of power splitter, and power splitter is symmetrical about middle separated time；Wherein the first port is common port, and the second port and the 3rd port are a point mouth, and the 4th port and fifth port are load port；Power splitter center is provided with two rows and is parallel to each other and about symmetrical the first metal column alignment of middle separated time；Power splitter adopts substrate integrated wave guide structure, including upper strata metal covering, intermediate medium plate and lower metal face, intermediate medium plate, between upper strata metal covering and lower metal face, arranges two between upper strata metal covering and the lower metal face of five ports and ranked second metal column alignment；Often ranked first metal column array and the second metal column alignment all includes multiple metal column, each metal column all contacts with upper strata metal covering and lower metal face.

The present invention compared with prior art, has following remarkable advantage: (1) present invention based on substrate integration wave-guide Gysel power splitter, bandwidth from 5% to 10%, can meet engineering demand；(2) present invention adopts five-port junction structure, compares and traditional chip integrated waveguide power distributor, it is achieved that the isolation between two points of mouths；(3) present invention adopts Gysel type power divider structure, and power capacity is big；(4) present invention is compared with the Gysel type power splitter of microstrip type, adopts substrate integrated wave guide structure, and applicable frequency range is wider；(5) present invention adopts substrate integrated wave guide structure, and circuitry specifications is relatively stable, can also carry out the debugging of necessity simultaneously after manufacture, meet the demand under specified conditions；(6) present configuration design is simple, it is possible to adopting conventional PCB printed board processing technology, traditional process for machining and manual seating means, economy highlights；(7) design principle of the present invention is simple, to substrate material almost without particular/special requirement, it is possible to adopt all of microwave base plate, has versatility widely.

Below in conjunction with accompanying drawing, the present invention is described in further detail.

Accompanying drawing explanation

Fig. 1 is the integrated waveguide coupling structural representation of the present invention.

Fig. 2 is the schematic top plan view of two load port vertical output integrated waveguide Gysel power splitters of the present invention.

Fig. 3 is the schematic top plan view of two load port horizontal output integrated waveguide Gysel power splitters of the present invention.

Fig. 4 is the manuscript of two load port vertical output integrated waveguide Gysel power splitters of an embodiment of the present invention.

Fig. 5 is return loss emulation and the test and comparison of two load port vertical output integrated waveguide Gysel power splitters of an embodiment of the present invention.

Fig. 6 is amplitude distribution emulation and the test and comparison of two load port vertical output integrated waveguide Gysel power splitters of an embodiment of the present invention.

Fig. 7 is the phase place of two load port vertical output integrated waveguide Gysel power splitters of an embodiment of the present invention and isolates emulation and test and comparison.

Detailed description of the invention

In conjunction with Fig. 1, Fig. 2, a kind of Gysel type power splitter based on substrate integration wave-guide, including the first port, the second port, the 3rd port, the 4th port and fifth port；First port is on the middle separated time of power splitter, and power splitter is symmetrical about middle separated time；Wherein the first port is common port, and the second port and the 3rd port are a point mouth, and the 4th port and fifth port are load port；Power splitter center is provided with two rows and is parallel to each other and about symmetrical the first metal column alignment of middle separated time；Power splitter adopts substrate integrated wave guide structure, including upper strata metal covering 1, intermediate medium plate 2 and lower metal face 3, intermediate medium plate 2, between upper strata metal covering 1 and lower metal face 3, arranges two between upper strata metal covering 1 and the lower metal face 3 of five ports and ranked second metal column alignment 4；Often ranked first metal column array and the second metal column alignment all includes multiple metal column, each metal column all contacts with upper strata metal covering 1 and lower metal face 3.

The width of port substrate integration wave-guide and the radius of metal column can calculate according to following formula:

$a^{\′}=\frac{a}{\mathrm{\π}}\mathrm{arc}\cot \left(\frac{\mathrm{\πW}}{4a}\ln \frac{W}{4R}\right)$

R < 0.1 λ_g, W < 4R, R < 0.2a

Wherein a ' is the width of SIW, and R is metal column radius, and W is the spacing of adjacent metal post, and a is the width of the rectangular waveguide RW (RectangularWaveguide) of transmission characteristic equivalence, λ_gWavelength for rectangular waveguide RW；Generally choose metal column radius less than the 1/10 of substrate integration wave-guide cutoff wavelength, between two metal columns, be smaller than metal column diameter, and make suitably to regulate；The width of upper strata, five ports metal covering is at least 1/2nd of substrate integrated wave guide structure cut-off frequency wavelength.

In metal column array, the radius of each metal column is generally 0.2～0.5mm, and the distance between each two metal column is generally 0.2～2mm, and actual parameter is relevant with operating frequency, it is necessary to carry out careful design.

Described second port and the 3rd port are symmetrical about separated time in power splitter and point-blank, and the 4th port and fifth port are symmetrical and perpendicular with the second port and the 3rd port place straight line about separated time in power splitter.

In conjunction with Fig. 3, described second port and the 3rd port are symmetrical about separated time in power splitter and point-blank, the 4th port and fifth port symmetrical about separated time in power splitter and with the second port and the 3rd port place straight line parallel.

Described first port is connected with input signal, and the second port and the 3rd port are connected with late-class circuit, and the 4th port is connected with matched load or microwave-absorbing body with fifth port.

Preferably, the width of described five ports is identical.

The spacing that length is 3 metal columns of described first metal column alignment, two ranked first the width less than port of the distance between metal column alignment；

Upper metal layers 1 can be identical with the width of intermediate medium plate 2 with the width of lower metal layer 3, it is also possible to less than intermediate medium plate 2.

The thickness of intermediate medium plate is 0.125mm, 0.254mm, 0.508mm, 0.762mm, 1.016mm or 1.524mm.

Below in conjunction with specific embodiment, the present invention is described in further detail.

Embodiment 1

For the ease of test and whole terminating load, it is used uniformly across substrate integration wave-guide micro-strip and tests with the mode of principal axis transformation.

In conjunction with Fig. 1, the height of intermediate medium plate is 1.016mm, and the dielectric constant of intermediate medium plate is 3.5；

Symmetrical about separated time in power splitter in conjunction with Fig. 2, second port of the present embodiment and the 3rd port and point-blank, the 4th port and fifth port are symmetrical and perpendicular with the second port and the 3rd port place straight line about separated time in power splitter.

In conjunction with Fig. 4, plated through-hole diameter is 0.5mm, and hole center distance is 1mm, and between two row's metal column alignments, hole centre distance is 10.75mm.The operating frequency of design is 9.75GHz～10.25GHz, and relative bandwidth is 5%, and return loss is about 1.3.

Such as Fig. 5 Fig. 7, Fig. 5 is return loss emulation and test and comparison by simulation result and test result, and Fig. 6 is amplitude distribution emulation and test and comparison, and Fig. 7 is phase place and isolation emulation and test and comparison；Wherein simulatedS parameter is emulation data, and measuredS parameter is measured data.

From test result it can be seen that in the bandwidth of 5%, reflection coefficient of port loss is less than 17.7dB, and insertion loss 0.7dB, amplitude distribution rises and falls/inconsistent for 0.3dB, and phase fluctuation/inconsistent is 2 degree, and point port isolation is more than 25dB, and energy leakage is less than 15dB.

The ultimate principle of the present invention is that the second port and the 3rd port have energy to export, and the amplitude of output is equal when electromagnetic wave enters from the first port, for half (lossless) or smaller (lossy) of input；When electromagnetic wave is simultaneously entered from the second port and the 3rd port, the first port output energy, for input sum；And when the second port or the 3rd port individually enter energy, the half of the first port output energy, remaining energy is undertaken respectively by the 4th port and fifth port, and another point of port noenergy output, because collect in the anti-phase counteracting of energy of another point of port through different paths.4th port and fifth port connect power absorption load, resistance or microwave-absorbing body.

Above-described embodiment it is shown that substrate integration wave-guide Gysel power splitter of the present invention can meet the actual demand of high power, high isolation, volume is little, lightweight, is suitably applied power combing and the distribution of various SIW system.

Claims (10)

1. the Gysel type power splitter based on substrate integration wave-guide, it is characterised in that include the first port, the second port, the 3rd port, the 4th port and fifth port；Described first port is on the middle separated time of power splitter, and power splitter is symmetrical about middle separated time；Wherein the first port is common port, and the second port and the 3rd port are a point mouth, and the 4th port and fifth port are load port；Power splitter center is provided with two rows and is parallel to each other and about symmetrical the first metal column alignment of middle separated time.Power splitter adopts substrate integrated wave guide structure, including upper strata metal covering (1), intermediate medium plate (2) and lower metal face (3), intermediate medium plate (2) is positioned between upper strata metal covering (1) and lower metal face (3), arranges two and ranked second metal column alignment (4) between upper strata metal covering (1) and lower metal face (3) of five ports；Often ranked first metal column array and the second metal column alignment all includes multiple metal column, each metal column all contacts with upper strata metal covering (1) and lower metal face (3).

2. the Gysel type power splitter based on substrate integration wave-guide according to claim 1, it is characterized in that, described second port and the 3rd port are symmetrical about separated time in power splitter and point-blank, and the 4th port and fifth port are symmetrical and perpendicular with the second port and the 3rd port place straight line about separated time in power splitter.

3. the Gysel type power splitter based on substrate integration wave-guide according to claim 1, it is characterized in that, described second port and the 3rd port are symmetrical about separated time in power splitter and point-blank, the 4th port and fifth port symmetrical about separated time in power splitter and with the second port and the 3rd port place straight line parallel.

4. the Gysel type power splitter based on substrate integration wave-guide according to claim 1, it is characterised in that described first port is connected with input signal, and the second port and the 3rd port are connected with late-class circuit, and the 4th port is connected with matched load with fifth port.

5. the Gysel type power splitter based on substrate integration wave-guide according to claim 1-4 any one, it is characterised in that the width of described five ports is identical.

6. the Gysel type power splitter based on substrate integration wave-guide according to claim 5, it is characterised in that the spacing that length is 3 metal columns of described first metal column alignment, two ranked first the width less than port of the distance between metal column alignment.

7. the Gysel type power splitter based on substrate integration wave-guide according to claim 1,2,3,4 or 6, it is characterised in that described metal column diameter is 0.5mm, and the center distance of each two metal column is 1mm.

8. the Gysel type power splitter based on substrate integration wave-guide according to claim 4, it is characterised in that the 4th port can also be connected with microwave-absorbing body with fifth port.

9. the Gysel type power splitter based on substrate integration wave-guide according to claim 1-4 any one, it is characterised in that the width on upper strata, five ports metal covering (1) is at least 1/2nd of substrate integrated wave guide structure cut-off frequency wavelength.

10. the Gysel type power splitter based on substrate integration wave-guide according to claim 1-4 any one, it is characterised in that the thickness of described intermediate medium plate is 0.125mm, 0.254mm, 0.508mm, 0.762mm, 1.016mm or 1.524mm.