CN105811064B - Gysel type power splitter based on substrate integration wave-guide - Google Patents
Gysel type power splitter based on substrate integration wave-guide Download PDFInfo
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- CN105811064B CN105811064B CN201410854327.5A CN201410854327A CN105811064B CN 105811064 B CN105811064 B CN 105811064B CN 201410854327 A CN201410854327 A CN 201410854327A CN 105811064 B CN105811064 B CN 105811064B
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Abstract
The invention discloses a kind of Gysel type power splitter based on substrate integration wave-guide, including first port, second port, third port, the 4th port and fifth port;For the first port in the middle separated time of power splitter, power splitter is symmetrical about middle separated time;Wherein first port is common port, and second port and third port are to divide mouth, and the 4th port and fifth port are load port;Power splitter uses substrate integrated wave guide structure, including upper layer metal covering, intermediate medium plate and lower metal face, setting two ranked second metal column alignment between upper layer metal covering and lower metal face, often ranked second metal column alignment includes multiple metal columns, and each metal column is in contact with upper layer metal covering and lower metal face.The present invention meets the actual demand of high power, high isolation, small in size, light-weight, is suitably applied power combing and the distribution of various SIW systems.
Description
Technical field
The invention belongs to power splitter field, especially a kind of Gysel type power splitter based on substrate integration wave-guide.
Background technique
Power splitter is the significant components in Modern Communication System, is widely used in microwave communication, electronic countermeasure, frequency synthesis
In the systems such as microwave measurement.Power splitter is mainly used for the distribution of energy, synthesis, generally there is a total mouth, and more than two points
Mouthful, according to dividing the quantity of mouth that can be divided into one-to-two, one point three, one point more than four and one points;According to dividing mouth power whether complete
Equally, equal part and two kinds of non-equal part can be divided into;According to whether mouth phase is divided, mutually and not etc. two kinds of phases can be divided into etc.;
Small-power, middle power and high power etc. can be divided into according to power capacity;Microstrip type, coaxial can be divided into according to transmission line form
Type, waveguide type etc.;Isolated form and not isolated form can be divided into according to dividing mouth whether to be isolated;It can be divided into according to structure type
Welkinson (Wilkinson), Gysel (Jie Saier), branch line and directional coupler etc..
Using the planar junction of substrate integration wave-guide, that is, SIW (Substrate Integrated Waveguide) Lai Shixian
Structure, has the advantages that small in size, light-weight, relative bandwidth is wider, while can hold at the advantages of having merged rectangular waveguide and microstrip line
By higher power threshold, Q value is also relatively high, and it is very prominent that theoretical and experiment shows that this kind of planar structure has the advantages that,
Therefore it can be obtained very in microwave and millimeter wave circuit, hydrid integrated circuit (HMIC) and millimeter wave monolithic integrated circuit (MMIC)
Good application.Meanwhile also there are more and more introductions in relation to chip integrated waveguide power distributor, such as 1 (" Y-junction of document
Power divider based on substrate integrated waveguide ", Electronics Letters8th
) or (" the Multilayer Substrate Integrated Waveguide of document 2 Dec.2011Vol.47No.25
Four-Way Out-of-Phase Power Divider ", IEEE Transactions on Microwave
Technology and Techniques, Vol.57, No.12, Dec 2009, pp3469-3476);But this kind of power splitter
Major defect be that referring to traditional Wilkinson power divider, isolation resistance is located at the center for dividing arm, thus unbearable height
Power, and due to the ghost effect of isolation resistance, can not work to very high-frequency;On the other hand, based on traditional waveguide shape
Formula can not be isolated, or need multilayer circuit to be isolated;These disadvantages affect the application of such power splitter at high power.
Summary of the invention
The purpose of the present invention is to provide a kind of Gysel type power splitter based on substrate integration wave-guide.
The technical solution for realizing the aim of the invention is as follows: a kind of Gysel type power splitter based on substrate integration wave-guide, packet
Include first port, second port, third port, the 4th port and fifth port;Middle separated time of the first port in power splitter
On, power splitter is symmetrical about middle separated time;Wherein first port is common port, and second port and third port are to divide mouth, the 4th end
Mouth and fifth port are load port;Power splitter center is provided with two rows and is parallel to each other and about symmetrical first gold medal of middle separated time
Belong to column alignment;Power splitter uses substrate integrated wave guide structure, including upper layer metal covering, intermediate medium plate and lower metal face, in
Between dielectric-slab between upper layer metal covering and lower metal face, set between the upper layer metal covering and lower metal face of five ports
Setting two ranked second metal column alignment;Often ranked first metal column array and the second metal column alignment includes multiple metal columns, each
Metal column is in contact with upper layer metal covering and lower metal face.
Compared with prior art, the present invention having the following obvious advantages: (1) of the invention based on substrate integration wave-guide
Gysel power splitter, bandwidth can meet engineering demand from 5% to 10%;(2) present invention uses five-port junction structure, compares and biography
The chip integrated waveguide power distributor of system realizes the isolation between two points of mouths;(3) present invention uses Gysel type power splitter knot
Structure, power capacity are big;(4) present invention, using substrate integrated wave guide structure, is applicable in compared with the Gysel type power splitter of microstrip type
Frequency range is wider;(5) present invention uses substrate integrated wave guide structure, and circuitry specifications are relatively stable, while can also produce
After carry out necessary debugging, meet the needs of under specified conditions;(6) structure of the invention design is simple and easy, can be using conventional
PCB printed board manufacture craft, traditional process for machining and manual seating means, economy is prominent;(7) present invention design
Principle is simple, to substrate material almost without particular/special requirement, can use all microwave base plates, have extensive versatility.
Present invention is further described in detail with reference to the accompanying drawing.
Detailed description of the invention
Fig. 1 is integrated waveguide mating structure schematic diagram of the invention.
Fig. 2 is the schematic top plan view of two load port vertical output integrated waveguide Gysel power splitters of the invention.
Fig. 3 is the schematic top plan view of two load port horizontal output integrated waveguide Gysel power splitters of the invention.
Fig. 4 is the manuscript of two load port vertical output integrated waveguide Gysel power splitters of an embodiment of the present invention.
Fig. 5 is the echo damage of two load port vertical output integrated waveguide Gysel power splitters of an embodiment of the present invention
Consumption emulation and test and comparison.
Fig. 6 is the amplitude point of two load port vertical output integrated waveguide Gysel power splitters of an embodiment of the present invention
With emulation and test and comparison.
Fig. 7 be an embodiment of the present invention two load port vertical output integrated waveguide Gysel power splitters phase and
Isolation emulation and test and comparison.
Specific embodiment
In conjunction with Fig. 1, Fig. 2, a kind of Gysel type power splitter based on substrate integration wave-guide, including first port, second end
Mouth, third port, the 4th port and fifth port;First port is in the middle separated time of power splitter, and power splitter is about middle separated time pair
Claim;Wherein first port is common port, and second port and third port are to divide mouth, and the 4th port and fifth port are load port;
Power splitter center is provided with two rows and is parallel to each other and about the symmetrical first metal column alignment of middle separated time;Power splitter uses base
Piece integrated wave guide structure, including upper layer metal covering 1, intermediate medium plate 2 and lower metal face 3, intermediate medium plate 2 are located at upper layer gold
Being arranged two between category face 1 and lower metal face 3, between the upper layer metal covering 1 and lower metal face 3 of five ports ranked second metal
Column alignment 4;It often ranked first metal column array and the second metal column alignment include multiple metal columns, each metal column is and upper layer
Metal covering 1 and lower metal face 3 are in contact.
The radius of the width of substrate integration wave-guide and metal column can be calculated according to following formula at port:
0.1 λ of R <g, W < 4R, R < 0.2a
Wherein a ' is the width of SIW, and R is metal column radius, and W is the spacing of adjacent metal column, and a is that transmission characteristic is equivalent
The width of rectangular waveguide RW (Rectangular Waveguide), λgFor the wavelength of rectangular waveguide RW;It is general to choose metal column half
Diameter is less than the 1/10 of substrate integration wave-guide cutoff wavelength, and the spacing between two metal columns is less than metal column diameter, and makees appropriate adjust
Section;The width of upper layer metal covering is at least the half of substrate integrated wave guide structure cutoff frequency wavelength at five ports.
The radius of each metal column is usually 0.2~0.5mm in metal column array, and the distance between every two metal column is logical
It is often 0.2~2mm, actual parameter is related to working frequency, needs to carry out careful design.
The second port and third port about power splitter middle separated time symmetrically and point-blank, the 4th port and
Five ports are symmetrical about power splitter middle separated time and perpendicular with straight line where second port and third port.
In conjunction with Fig. 3, the second port and third port about power splitter middle separated time symmetrically and point-blank, the 4th
Port and fifth port it is symmetrical about power splitter middle separated time and with straight line parallel where second port and third port.
The first port is connected with input signal, and second port and third port are connected with late-class circuit, the 4th port
It is connected with fifth port with matched load or microwave-absorbing body.
Preferably, five ports is of same size.
The length of the first metal column alignment be 3 metal columns spacing, two ranked first between metal column alignment away from
From the width for being less than port;
The width of upper metal layers 1 and lower metal layer 3 can be of same size with intermediate medium plate 2, might be less that
Intermediate medium plate 2.
Intermediate medium plate with a thickness of 0.125mm, 0.254mm, 0.508mm, 0.762mm, 1.016mm or 1.524mm.
Present invention is further described in detail combined with specific embodiments below.
Embodiment 1
For the ease of test and whole terminating load, the mode for being used uniformly substrate integration wave-guide-micro-strip-with principal axis transformation is carried out
Test.
In conjunction with Fig. 1, the height of intermediate medium plate is 1.016mm, and the dielectric constant of intermediate medium plate is 3.5;
In conjunction with Fig. 2, the second port and third port of the present embodiment are symmetrical about power splitter middle separated time and in straight line
On, the 4th port and fifth port symmetrically and with straight line where second port and third port are mutually hung down about power splitter middle separated time
Directly.
In conjunction with Fig. 4, plated through-hole diameter is 0.5mm, and Kong Zhongxin spacing is 1mm, hole center between two rows of metal column alignments
Distance is 10.75mm.The working frequency of design is 9.75GHz~10.25GHz, and relative bandwidth 5%, return loss is 1.3 left
It is right.
The comparison of simulation result and test result such as Fig. 5-Fig. 7, Fig. 5 are that return loss emulates and test and comparison, Fig. 6 are width
Degree distribution emulation and test and comparison, Fig. 7 are phase and isolation emulation and test and comparison;Wherein simulated S parameter is emulation
Data, measured S parameter are measured data.
From test result as can be seen that in 5% bandwidth, reflection coefficient of port loss is less than 17.7dB, insertion loss
0.7dB, amplitude distribution rises and falls/it is inconsistent be 0.3dB, phase fluctuation/inconsistent is 2 degree, and port isolation is divided to be greater than 25dB, energy
Leakage is less than -15dB.
Basic principle of the invention is when electromagnetic wave enters from first port, and second port and third port have energy defeated
Out, and the amplitude of output is equal, for the half (lossless) of input or smaller (lossy);When electromagnetic wave is from second port and
When three ports input simultaneously, first port exports energy, for the sum of input;And when second port or third port individually enter energy
When amount, first port exports the half of energy, and remaining energy is undertaken respectively by the 4th port and fifth port, and another point
Port noenergy output, because being offset by the energy reverse phase that different paths collect in another point of port.4th port and the 5th
Port connects power absorption load, resistance or microwave-absorbing body.
Above-described embodiment the result shows that, substrate integration wave-guide Gysel power splitter of the present invention can satisfy high power, it is high every
From actual demand, it is small in size, it is light-weight, be suitably applied power combing and the distribution of various SIW systems.
Claims (10)
1. a kind of Gysel type power splitter based on substrate integration wave-guide, which is characterized in that including first port, second port,
Three ports, the 4th port and fifth port;The first port is in the middle separated time of power splitter, and power splitter is about middle separated time pair
Claim;Wherein first port is common port, and second port and third port are to divide mouth, and the 4th port and fifth port are load port;
Power splitter center is provided with two rows and is parallel to each other and about the symmetrical first metal column alignment of middle separated time;Power splitter uses base
Piece integrated wave guide structure, including upper layer metal covering (1), intermediate medium plate (2) and lower metal face (3), intermediate medium plate (2) position
Between upper layer metal covering (1) and lower metal face (3), between the upper layer metal covering (1) and lower metal face (3) of five ports
Setting two ranked second metal column alignment (4);Often ranked first metal column alignment and the second metal column alignment includes multiple metal columns,
Each metal column is in contact with upper layer metal covering (1) and lower metal face (3).
2. the Gysel type power splitter according to claim 1 based on substrate integration wave-guide, which is characterized in that described second
Symmetrically and point-blank about power splitter middle separated time, the 4th port and fifth port are about power splitter for port and third port
Middle separated time is symmetrical and perpendicular with straight line where second port and third port.
3. the Gysel type power splitter according to claim 1 based on substrate integration wave-guide, which is characterized in that described second
Symmetrically and point-blank about power splitter middle separated time, the 4th port and fifth port are about power splitter for port and third port
Middle separated time it is symmetrical and with straight line parallel where second port and third port.
4. the Gysel type power splitter according to claim 1 based on substrate integration wave-guide, which is characterized in that described first
Port is connected with input signal, and second port and third port are connected with late-class circuit, the 4th port and fifth port and matching
Load is connected.
5. the Gysel type power splitter according to any one of claims 1-4 based on substrate integration wave-guide, feature exist
In the of same size of, five ports.
6. the Gysel type power splitter according to claim 5 based on substrate integration wave-guide, which is characterized in that described first
The length of metal column alignment is the spacing of 3 metal columns, and two ranked first the width that the distance between metal column alignment is less than port.
7. according to claim 1, the Gysel type power splitter described in 2,3,4 or 6 based on substrate integration wave-guide, which is characterized in that
The metal column diameter is 0.5mm, and the center spacing of every two metal column is 1mm.
8. the Gysel type power splitter according to claim 4 based on substrate integration wave-guide, which is characterized in that the 4th port
It can also be connected with microwave-absorbing body with fifth port.
9. the Gysel type power splitter according to any one of claims 1-4 based on substrate integration wave-guide, feature exist
In the width of upper layer metal covering (1) is at least the half of substrate integrated wave guide structure cutoff frequency wavelength at five ports.
10. the Gysel type power splitter according to any one of claims 1-4 based on substrate integration wave-guide, feature exist
In, the intermediate medium plate with a thickness of 0.125mm, 0.254mm, 0.508mm, 0.762mm, 1.016mm or 1.524mm.
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CN108963406A (en) * | 2017-05-23 | 2018-12-07 | 南京理工大学 | The Gysel type power splitter of substrate integration wave-guide based on multilayer circuit technique |
CN110581335B (en) * | 2019-08-16 | 2021-06-08 | 南京理工大学 | Sequential feed power distribution network based on substrate integrated waveguide |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1949590A (en) * | 2006-10-27 | 2007-04-18 | 东南大学 | Substrate integrated waveguide comb-shaped power distributor |
CN102324615A (en) * | 2011-07-14 | 2012-01-18 | 韩煦 | Microwave millimeter wave planar broadband high-power micro-strip power synthesizer |
CN103050759A (en) * | 2013-01-31 | 2013-04-17 | 成都赛纳赛德科技有限公司 | Inverted pi-type five-port E-surface power divider |
CN203326077U (en) * | 2013-06-27 | 2013-12-04 | 中国人民解放军理工大学 | Coplanar waveguide feed substrate integration waveguide broadband power divider |
-
2014
- 2014-12-31 CN CN201410854327.5A patent/CN105811064B/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1949590A (en) * | 2006-10-27 | 2007-04-18 | 东南大学 | Substrate integrated waveguide comb-shaped power distributor |
CN102324615A (en) * | 2011-07-14 | 2012-01-18 | 韩煦 | Microwave millimeter wave planar broadband high-power micro-strip power synthesizer |
CN103050759A (en) * | 2013-01-31 | 2013-04-17 | 成都赛纳赛德科技有限公司 | Inverted pi-type five-port E-surface power divider |
CN203326077U (en) * | 2013-06-27 | 2013-12-04 | 中国人民解放军理工大学 | Coplanar waveguide feed substrate integration waveguide broadband power divider |
Non-Patent Citations (2)
Title |
---|
A New N-Way Power Divider/Combiner Suitable for High-Power Applications;U. H. Gysel;《Microwave Symposium, 1975 IEEE-MTT-S International》;19751231;第116-118页 |
Y-junction power divider based on substrate integrated waveguide;X. Zou, C.-M. Tong and D.-W. Yu;《ELECTRONICS LETTERS》;20111231;第47卷(第25期);第1-2页 |
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