CN106785249B - 90 ° of phase-shift networks of ultra wide band - Google Patents
90 ° of phase-shift networks of ultra wide band Download PDFInfo
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- CN106785249B CN106785249B CN201611174290.7A CN201611174290A CN106785249B CN 106785249 B CN106785249 B CN 106785249B CN 201611174290 A CN201611174290 A CN 201611174290A CN 106785249 B CN106785249 B CN 106785249B
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- microstrip
- siw
- phase
- micro
- microstrip line
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/184—Strip line phase-shifters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
Abstract
The present invention provides a kind of 90 ° of phase-shift networks of ultra wide band, the upper layer of two-sided micro-strip plate is microstrip circuit, and lower layer is micro-strip metal floor, and microstrip circuit is made of two close microstrip lines and impedance matching section, matching section metal-loaded transition structure.Intermediate in micro-strip plate forms rectangle SIW structure using close plated-through hole, and introduces equidistant gap at the coupled section underlying floor of microstrip line.Present invention employs the microstrip structures of manifold type to greatly improve bandwidth, the uneven electric field that the SIW back chamber elimination microstrip lines area cracked is utilized simultaneously to realize stable phase delay and impedance matching within the scope of frequency tripling, solves the problems, such as the high-precision phase shift under big bandwidth.Present invention can apply to be used for lifting system precision and bandwidth in the directional couple network in broadband, circular polarized antenna feeding network and radar and poor comparing cell.
Description
Technical field
The invention belongs to microwave passive phase shifter fields, are related to a kind of 90 based on microstrip structure ° phase-shift network, Ke Yichao
The phase shift of high-precision filter with low insertion loss is realized in broadband.
Background technique
Broadband is an important directions of microwave antenna development in recent years, especially broadband matching phase-shift network.
Phase-shift network is component part important in microwave and antenna works, is widely used in power division network, the circle of array antenna
Poliarizing antenna feeding network, monopulse radar and in the feeding networks such as poor comparing cell.
Currently, most phase-shift network is all based on, transmission line is long carrying out phase shift, and wire length is related to wavelength, bandwidth
It is narrow；The phase-shift network of some slot-coupled although solving the problems, such as bandwidth to a certain extent, phase shifting accuracy without
Method guarantee.So bandwidth of operation is limited and phase shifting accuracy difference is the two large problems that novel phase shifter faces.
Summary of the invention
For overcome the deficiencies in the prior art, the present invention, which provides, a kind of based on microstrip lines and loads the super of SIW back chamber
Broadband phase-shift network is loaded by the single layer microstrip plate for being coupled in low section of microstrip line, realizes 90 ° of high stables in ultra wide band
Phase shift.
The technical solution adopted by the present invention to solve the technical problems is: being microstrip circuit in two-sided micro-strip plate side, separately
Side is metal floor；In microstrip circuit side, two microstrip lines are arranged in parallel, and one end of two microstrip lines is 90 degree micro-
Band line turning, and two microstrip line turnings is contrary, the other end of two microstrip lines passes through the transformation of 1/4 wavelength impedance of level-one
Section connection 1/4 wavelength impedance transforming section of the second level, the impedance of 1/4 wavelength impedance transforming section of two-stage is different, and several perforations are two-sided micro-
The plated-through hole of band plate around two microstrip lines, forms SIW structure in metal floor side, in SIW in rectangular arranged
Oval gap there are four opening on the metal floor of structure, four oval gaps are equidistantly arranged along the axis of SIW structure, each ellipse
For the long axis in circle gap perpendicular to the axis of SIW structure, the short side two sides in each ellipse gap are provided with rectangular channel；Microstrip line turning with
The tuning screw of SIW structure is located at the central axes of SIW structure；1/4 wavelength impedance transforming section of the second level is close to microstrip line one end
For an impedance matching circle.
The beneficial effects of the present invention are: the microstrip structure for using manifold type greatly improves bandwidth, while being utilized out
The SIW back chamber of seam eliminates the uneven electric field in microstrip lines area, so that realizing stable phase delay within the scope of frequency tripling
And impedance matching, solve the problems, such as the high-precision phase shift under big bandwidth.
Detailed description of the invention
Fig. 1 is the structure chart of 90 ° of phase-shift networks of ultra wide band of the present invention, wherein (a) is three-dimensional view, is (b) to overlook
Figure；
Fig. 2 is that SIW of the present invention carries on the back chamber perspective view.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples, and the present invention includes but are not limited to following implementations
Example.
The present invention provides the ultra wide band phase-shift network of a kind of micro-strip and SIW, and main group becomes the two-sided micro-strip of a single layer
Plate, upper layer are microstrip circuit, and microstrip circuit is made of two close microstrip lines and impedance matching section, and wherein transformer section adds
Metal transfer structure is entered.Lower layer is micro-strip metal floor.Intermediate in micro-strip plate forms SIW using close plated-through hole
Structure, and equidistant gap is added below the coupled section of microstrip line.
The micro-strip plate material is the medium substrate that dielectric constant is 2.2.
As shown in Figure 1, the present invention propose 90 ° of phase-shift network main bodys of ultra wide band by coupling microstrip section, transformer section and
SIW, which cracks, carries on the back chamber (as shown in Figure 2) three parts composition, has passed through side coupled microstrip line and has carried out energy transmission and shape phase in 90 °
Position delay, two sections of microstrip line same layers are placed in parallel.Impedance matching section is utilized the impedance transformation of 1/4 wavelength of two-stage and in second segment
It joined sheet metal transition between first segment.The SIW back cavity structure cracked is used in the lower section of coupled section, gap is equidistant
It is arranged on SIW cavity axis.
In Fig. 1, microstrip line turning and SIW, which crack, to be carried on the back the tuning screw 3 of chamber the initial segment and is located at SIW and cracks and carry on the back the central axes of chamber
The relative position at place, change tuning screw 3 and microstrip line turning can carry out the fine tuning of impedance.Two root distances are from very close micro-strip
The distance between line 5 determines the size of coupling.The impedance of 1/4 wavelength impedance transforming section 7,9 of two-stage is different.In dielectric-slab 1
The rectangular arrangement of plated-through hole 4 surrounds two parallel microstrip lines, SIW structure is formd below coupled section.SIW's
Class ellipse gap 6 is provided on metal floor, gap 6 is parallel with the SIW back axis of chamber, and totally four, each in elliptical left and right two
Side is respectively added to small rectangular channel.There is an impedance matching circle 8 in the front of second section, 1/4 wavelength impedance transforming section 9, so that electromagnetism
Wave forms a stable transition in the discontinuous segment of transmission, realizes broadband impedance transformation.
In Fig. 2, SIW back chamber perspective view can be seen that gap is equidistant and full symmetric relative to back chamber, pass through selection gold
Categoryization through-hole spacing, which can guarantee, realizes the resonance performance of SIW chamber in specific frequency.
An important factor for wherein influencing the network impedance bandwidth for 1/4 wavelength impedance transforming section 7,9 of rear end two-stage impedance
Value.And energy is carried out even summation transmission and shape phase shift in 90 ° by coupling by microstrip line closely, the spacing of two sections of microstrip lines is shadow
Ring the most important factor of phase shift and transmission.After selecting suitable microstrip line spacing, rectangle SIW fluting is introduced below coupling line
Carry on the back chamber, carry on the back chamber size and gap can small-scale broadening impedance bandwidth, while can also improve band in phase flatness.
Claims (1)
1. a kind of 90 ° of phase-shift networks of ultra wide band, it is characterised in that: two-sided micro-strip plate side be microstrip circuit, the other side be gold
Possession plate；In microstrip circuit side, two microstrip lines are arranged in parallel, and one end of two microstrip lines is that 90 degree of microstrip line turns
Angle, and two microstrip line turnings is contrary, the other end of two microstrip lines passes through 1/4 wavelength impedance transforming section of level-one and connects
The impedance of 1/4 wavelength impedance transforming section of the second level, 1/4 wavelength impedance transforming section of two-stage is different, several two-sided micro-strip plates of perforation
Plated-through hole around two microstrip lines, forms SIW structure in metal floor side, in SIW structure in rectangular arranged
It is opened on metal floor there are four oval gap, four oval gaps are equidistantly arranged along the axis of SIW structure, each ellipse gap
Long axis perpendicular to SIW structure axis, it is each ellipse gap short side two sides be provided with rectangular channel；Microstrip line turning and SIW are tied
The tuning screw of structure is located at the central axes of SIW structure；1/4 wavelength impedance transforming section of the second level is one close to microstrip line one end
Impedance matching circle.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510970373 | 2015-12-22 | ||
| CN2015109703736 | 2015-12-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106785249A CN106785249A (en) | 2017-05-31 |
| CN106785249B true CN106785249B (en) | 2019-01-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611174290.7A Active CN106785249B (en) | 2015-12-22 | 2016-12-19 | 90 ° of phase-shift networks of ultra wide band |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546448B (en) * | 2017-08-03 | 2019-11-05 | 电子科技大学 | A kind of inclined-plane absorption based on SIW transmission line is array-supported |
| CN108880475A (en) * | 2018-06-27 | 2018-11-23 | 电子科技大学 | A kind of SIW transmission line diode frequency multiplier |
| CN111883882B (en) * | 2020-08-06 | 2021-11-16 | 上海星申仪表有限公司 | Equal-length substrate integrated waveguide phase shifter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201383549Y (en) * | 2009-04-17 | 2010-01-13 | 东南大学 | Multibeam antenna with high radiation efficiency |
| CN104716408A (en) * | 2015-03-27 | 2015-06-17 | 电子科技大学 | Continuous variable substrate integrated waveguide analog phase shifter |
-
2016
- 2016-12-19 CN CN201611174290.7A patent/CN106785249B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201383549Y (en) * | 2009-04-17 | 2010-01-13 | 东南大学 | Multibeam antenna with high radiation efficiency |
| CN104716408A (en) * | 2015-03-27 | 2015-06-17 | 电子科技大学 | Continuous variable substrate integrated waveguide analog phase shifter |
Non-Patent Citations (2)
| Title |
|---|
| Substrate Integrated Waveguide (SIW) broadband compensating phase shifter;YuJian Cheng et al;《2009 IEEE MTT-S International Microwave Symposium Digest》;20090612;845-848 |
| 低剖面宽带180°和差比较网络设计;姚近;《2015年全国天线年会》;20151018;1471-1473 |
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| CN106785249A (en) | 2017-05-31 |
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