CN104538718B - A kind of spatial power combiner of the double Coupler in finline microstrip line forms of waveguide - Google Patents

Abstract

The present invention relates to a kind of spatial power combiner of the double Coupler in finline microstrip line forms of waveguide, including connection waveguide port, transition structure, anti-resonance piece and microstrip line；Transition structure uses the metal gradient fin line of cosine square equation, it is printed on the tow sides of medium substrate, positive metal gradient fin-line transition is into two-way microstrip line, the metal gradient fin line of reverse side is used as ground, anti- resonance piece is printed on the reverse side of medium substrate, and it is rectangular shape for semicircle, centre to use two ends.

Description

A kind of spatial power combiner of waveguide-bis- Coupler in finline-microstrip line form

Technical field

The present invention relates to Radar Technology field, the specifically spatial power combiner in radar solid state transmitter.

Background technology

High power amplifier is one of microwave or the essential critical component of millimeter wave frequency band emitter, and it mainly passes through Electron tube or solid-state devices realize power amplification function.For electron tube, because it is high tension apparatus, in reality Need to provide high voltage power supply in, so volume and weight has application scenario certain limitation；For solid-state amplifier Part, has the advantages that low voltage, small volume, lightweight, should in radar solid state transmitter in particular with micro-strip printed circuit With solid-state amplifier part can be applied in wider occasion, but single solid-state power amplifier part, its power capacity ratio Electron tube is low, can not usually meet powerful requirement.In order to not only embody the advantage of solid-state amplifier part but also can be with Meet powerful actual demand, it is necessary to design passive power synthesis network and enter the output of multiple Power Solid State amplifiers Row superposition, that is, carry out space power synthesis.

The content of the invention

The technical problem to be solved

In order to solve because the power capacity of single solid-state amplifier part is small, and solid state transmitter needs output high-power When power combing problem.The present invention proposes a kind of spatial power combiner of waveguide-bis- Coupler in finline-microstrip line form.

Technical scheme

A kind of spatial power combiner of waveguide-bis- Coupler in finline-microstrip line form, including connection waveguide port, transition Structure, anti-resonance piece and microstrip line；It is characterized in that transition structure uses the metal gradient fin line of cosine square equation, it is printed on On the tow sides of medium substrate, positive metal gradient fin-line transition is made into two-way microstrip line, the metal gradient fin line of reverse side For ground, anti-resonance piece is printed on the reverse side of medium substrate, and it is rectangular shape for semicircle, centre to use two ends；In medium base 1/4 medium wavelength is extended in plate both sides has the dielectric substrate on metal ground as fixed structure is installed, and installs and is opened on fixed structure Spacing circular hole.

Described metal gradient fin line cosine square equation：

In formula, ω is the width of 50 Ω microstrip lines, and z is the longitudinal coordinate of fin line transmission line, and b is duct height, L_fFor mistake Segment length is crossed, value 1.5 λ g, wherein λ g are TE10 mould waveguide wavelengths.

Medium substrate selects the materials of RT/Duroid 5880, permittivity ε_r=2.2, dielectric thickness is 0.254mm.

Beneficial effect

The spatial power combiner of a kind of waveguide proposed by the present invention-bis- Coupler in finline-microstrip line form, in Ku frequency ranges In 12.5GHz~15.5GHz, the insertion loss of power combiner is less than 0.6dB, and return loss is more than 16dB.This power combing The advantage of device is mainly：In the case of realizing space power synthesis in 3GHz bandwidth, by the quantization of amplitude in waveguide all the way Being coupled on 4 microstrip lines for branch, is easy to solid state power amplifier device on micro-strip printed circuit to put input power simultaneously Greatly, and by standard waveguide all the way mouthful export.It is easy to machining in structure, is easily installed.In electric property, realize Less insertion loss and larger return loss.

Brief description of the drawings

Coupler in finline structure explanation figure in Fig. 1 present invention

Coupler in finline tow sides size indication figure in Fig. 2 present invention：(a) front elevation, (b) reverse side figure

Double Coupler in finline structure explanation figures in Fig. 3 present invention

Double Coupler in finline size indication figures in Fig. 4 present invention

Double Coupler in finline back to back structure voltage standing-wave ratio simulation result figures in Fig. 5 present invention

Double Coupler in finline back to back structure insertion loss simulation result figures in Fig. 6 present invention

Embodiment

In conjunction with embodiment, accompanying drawing, the invention will be further described：

The passive power combining networks mesh of waveguide-bis- Coupler in finline-microstrip line transition structure is used in radar transmitter Be to realize the power combing in waveguide, it is ensured that good power combining efficiency and bandwidth of operation, and less spoke Penetrate loss, and suitable for micro-strip printed circuit solid-state devices installation.In the present invention, using regular rectangular shape standard waveguide Input and output port as power.Physically, the broadside of waveguide can be subjected to multilayer subdivision, form identical many Layer plane structure, realizes power amplification circuit structure on each layer.Meanwhile, standard waveguide is easy to be standardized with front and rear circuit Connection.Under the condition of work that main mould is transmitted in waveguide, the synthesis that power is carried out in equivalent waveguide.Transition structure uses ripple The form for turning micro-strip is led, by the energy coupling transmitted in waveguide into each layer of micro-strip printed circuit, solid-state amplification is recycled The power of each branch road is amplified by device, and output end takes micro-strip to be coupled to the power after amplification to the transition structure of waveguide In waveguide, the synthesis output of power is realized.

In the present invention, realize that the energy between waveguide-micro-strip is transmitted using the interim form of double Coupler in finline.It is double to pole fin Line can be considered directrix plane structure, be not only easy to be integrated in every layer plane structure after waveguide broadside multilayer subdivision, and due to Two-channel structure is employed, the power in waveguide can be divided into the two-way energy of Phase amplitude-matched in the same plane and be coupled to micro- On band line.In output end with same interim form is by the power combing on microstrip line and is coupled in waveguide.

From Ku frequency range standard rectangular waveguide BJ140 (15.8mm × 7.9mm), microstrip line dielectric substrate selects RT/ The materials of Duroid 5880, its dielectric constant=2.2, dielectric thickness is 0.254mm.

Such as Fig. 1, by connecting a bit of dielectric substrate of waveguide port to reduce waveguide transition to micro-strip dielectric substrate Discontinuous effect.Then, gradual change fin line section is transitioned into, gradual change fin line is used along gradually nyctitropic smooth impedance transition curve, bent Line equation is cosine square equation.In gradual change fin line section, two metal fins are printed on the two sides of medium substrate, and a fin is as micro- Band line, and smoothly it is divided into identical two-way, another fin is connected as the ground of microstrip line with short-circuit piece with waveguide metal wall.It is anti- Resonance metal piece is printed on the one side on microstrip line ground, with microstrip line small distance away.In order that whole power combing knot Structure can be placed in waveguide, and extending one section in dielectric substrate both sides has the dielectric substrate on metal ground as installation fixed knot Structure, extension width is about 1/4 medium wavelength, and equidistant circular hole is opened on fixed structure, to prevent resonance.

Such as Fig. 2, gradual change fin line cosine square transition equation is

In formula, ω is the width of 50 Ω microstrip lines, and z is the longitudinal coordinate of fin line transmission line, and b is duct height, L_fFor mistake Cross segment length.L_fLength it is too short, can increase the reflectance factor of port；Length is long, the loss of meeting increasing circuit, so one As take 1.5 λ g or so (λ g be TE10 moulds waveguide wavelength).

The semicircle arc radius at the anti-resonance piece two ends at the Coupler in finline back side is L_r, intermediate distance is L_c, away from fin line transition line group Into semi arch distance be S, short-circuit piece distance be L_s, micro belt line width is W_m, at a distance of W_ms, fixed structure width is W_x, perforate is straight Footpath is R.

Such as Fig. 3, above-mentioned two identical Coupler in finline transition structure is arranged on standard waveguide in back-to-back form In broadside, short-circuit piece is connected between two dielectric substrates with the long side of wave guide wall.Such as Fig. 4, the spacing of two Coupler in finline is Ds.

Using Ansoft HFSS electromagnetic simulation softwares, items are joined using above-mentioned pair of Coupler in finline structure back-to-back form Number carries out simulation optimization, and parameter optimization result is as shown in table 1.

Such as Fig. 5, simulation result shows：In 12.5GHz~15.5GHz working bands, double Coupler in finline voltage standing wave ratioes Respectively less than 1.35, reach maximum 1.34 in 14.35GHz.Such as Fig. 6, double to pole in 12.5GHz~15.5GHz working bands Fin line insertion loss is respectively less than 0.6dB, and unilateral loss is less than 0.3dB, maximum 0.55dB is reached in 15.5GHz.

1 pair of Coupler in finline dimensional parameters of table

Wd	Ws	D	L	Lf	Lm
						3.94mm	6.03mm	6.1mm	39mm	19.9mm	17.5mm
Wm	Wms	W	Wx	Ls	Lr
						0.76mm	3.18mm	7.9mm	4.05mm	34.5mm	1.3mm
Lc	S	R	Ds
						9.5mm	0.3mm	2.4mm	6.5mm

Claims (1)

1. a kind of spatial power combiner of waveguide-bis- Coupler in finline-microstrip line form, including connection waveguide port, transition knot Structure, anti-resonance piece and microstrip line；It is characterized in that transition structure uses the metal gradient fin line of cosine square equation, Jie is printed on On the tow sides of matter substrate, positive metal gradient fin-line transition is into two-way microstrip line, the metal gradient fin line conduct of reverse side Ground, anti-resonance piece is printed on the reverse side of medium substrate, and it is rectangular shape for semicircle, centre to use two ends；In medium substrate 1/4 medium wavelength is extended in both sides has the dielectric substrate on metal ground as fixed structure is installed, and installs between being opened on fixed structure etc. Away from circular hole, short-circuit piece is set between two dielectric substrates, short-circuit piece is connected with the long side of wave guide wall, equidistant circular hole be arranged in from Waveguide port is to the position of short-circuit piece；Described metal gradient fin line cosine square equation：

$\mathrm{\ω}\left(z\right)=\frac{b/2+\mathrm{\ω}}{2}{\sin }^2\left(\frac{\mathrm{\π}z}{2L_f}\right),0\≤z\≤L_f$

In formula, ω is the width of 50 Ω microstrip lines, and z is the longitudinal coordinate of fin line transmission line, and b is duct height, L_fFor transition segment length Degree, value 1.5 λ g, wherein λ g are TE10 mould waveguide wavelengths；

Medium substrate selects the materials of RT/Duroid 5880, permittivity ε_r=2.2, dielectric thickness is 0.254mm.