CN107317075A - The duplexer of chamber is shared based on rectangle substrate integrated waveguide - Google Patents
The duplexer of chamber is shared based on rectangle substrate integrated waveguide Download PDFInfo
- Publication number
- CN107317075A CN107317075A CN201710445273.0A CN201710445273A CN107317075A CN 107317075 A CN107317075 A CN 107317075A CN 201710445273 A CN201710445273 A CN 201710445273A CN 107317075 A CN107317075 A CN 107317075A
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- Prior art keywords
- chamber
- low
- rectangular chamber
- shared
- frequency rectangular
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/213—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
- H01P1/2138—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies using hollow waveguide filters
Abstract
The present invention discloses a kind of duplexer that chamber is shared based on rectangle substrate integrated waveguide, including Rectangular Enclosure with Participating Media substrate (5), completely it is affixed on the metal ground plane (4) of the medium substrate (5) lower surface and is attached at the metal level (7) of medium substrate (5) upper surface, in addition to multiple plated-through holes (6) that metal level (7) and ground plane (4) are connected through medium substrate (5)；The multiple plated-through hole (6) encloses a rectangle and shares chamber (a) and the first low-frequency rectangular chamber (b) and first high frequency rectangular chamber (e) adjacent with the long side of shared chamber (a) one, and the second low-frequency rectangular chamber (c) connected respectively with the first low-frequency rectangular chamber (b) and connect with the first high frequency rectangular chamber (e) with the second high frequency rectangular chamber (d).The duplexer of the present invention, integrated level is high, bandwidth ratio easily changes, frequency is sufficiently high and controllable.
Description
Technical field
The invention belongs to frequency-selecting device arts, particularly a kind of integrated level is high, bandwidth ratio easily changes, high frequency, can
The duplexer that chamber is shared based on rectangle substrate integrated waveguide of control.
Background technology
Duplexer is set in a kind of transmit-receive sharing common antenna exclusively for solution grown up on the basis of wave filter
A kind of Films In Passive Microwave Devices of meter.
Duplexer is generally divided into two types：Transmit-receive switch and frequency range duplexer.The former is mainly used in time-multiplexed thunder
Up in system, antenna and emitter are connected in transmitting, but receiver is disconnected；Launch end-of-pulsing, at once connect antenna with
Receiver, and emitter is disconnected.And the latter is that the signal of different frequency range by same common antenna is launched and connect respectively
Receive, it can improve reliability in radar and the communication technology, for improving anti-interference and privacy degrees, effect is more dashed forward
Go out.Therefore this frequency range duplexer, which possesses, is more widely applied scope, available for microwave radio relay communication, satellite communication, microwave
Measurement etc..
Existing frequency range duplexer such as Chinese invention patent application " high-isolation high-temperature superconducting duplex device and design method " (Shen
Please number：CN201610936119.9 publication date：2017-02-22) described, two filter channels are respectively positioned at public port
The right and left, forms T-type structure, and be connected with each other by microstrip line with public port；Two filter channels, public port and
Microstrip line processing is in upper substrate layer, and the lower floor of substrate is ground plane；Substrate uses magnesia MgO material, or lanthanum aluminate
LaAlO3 materials, sapphire material, dielectric constant are set to 9.7, and thickness h is 0.5mm, and upper strata and ground plane are yttrium barium copper oxide
(YBCO) superconducting thin film.
However, above-mentioned frequency range duplexer is the problem of presence：(1) two branching filters are connected using T junction and causes double
Work device integrated level is low, and volume is big.(2) branching filter is two independent units, converts the bandwidth ratio of branching filter
When, it is necessary to respectively change branching filter structure.(3) underfrequency, it is impossible to meet the demand of contemporary communication bandspreading.
The content of the invention
It is an object of the invention to provide a kind of duplexer that chamber is shared based on rectangle substrate integration wave-guide, integrated level
High, bandwidth ratio easily changes, high frequency, controllable.
The technical solution for realizing the object of the invention is：
It is a kind of that the duplexer of chamber is shared based on rectangle substrate integrated waveguide, including Rectangular Enclosure with Participating Media substrate 5, be completely affixed on and given an account of
The metal ground plane 4 of the lower surface of matter substrate 5 and the metal level 7 for being attached at the upper surface of medium substrate 5, in addition to it is multiple through medium
Substrate 5 connects the plated-through hole 6 of metal level 7 and ground plane 4；
It is low that the multiple plated-through hole 6 encloses the shared chamber a and adjacent with the long sides of shared chamber a mono- first of a rectangle
Frequency rectangular cavity b and the first high frequency rectangular chamber e, and respectively with the first low-frequency rectangular chamber b the second low-frequency rectangular chamber c connected and with
First high frequency rectangular chamber e connect with the second high frequency rectangular chamber d；
The first low-frequency rectangular chamber b and the first high frequency rectangular chamber e plated-through holes 6 shared with a row are mutually separated, the
Two low-frequency rectangular chamber c and the second high frequency rectangular chamber d plated-through holes 6 shared with a row are mutually separated；
Row's plated-through hole 6 shared second low-frequency rectangular chamber c and the first low-frequency rectangular chamber b is present for low frequency letter
Number coupling window passed through, the second high frequency rectangular chamber d and the first high frequency rectangular chamber e shared row's plated-through hole 6 is present for high
The coupling window that frequency signal passes through；
Another side relative with the first high frequency rectangular chamber e with the first low-frequency rectangular chamber b the shared chamber a is provided with incoming feeder
1, the input of the incoming feeder 1 is located on the first short side of medium substrate 5；
Another side relative with the first low-frequency rectangular chamber b the second low-frequency rectangular chamber c is provided with low frequency output feeder 2, institute
The output end for stating low frequency output feeder 2 is located on the second short side of medium substrate 5；
Another side relative with the first high frequency rectangular chamber e the second high frequency rectangular chamber d is provided with high frequency output feeder line 3, institute
The output end for stating high frequency output feeder line 3 is located on the second short side of medium substrate 5.
Compared with prior art, its remarkable advantage is the present invention：
(1) with two kinds of modes of resonance of rectangle substrate integration wave-guide resonator, omit in conventional diplexer design
Work(separation structure (T junction), effectively reduces the size of duplexer, increases its integrated level；
(2) duplexer can be controlled according to the height of the characteristic changing distributing point of rectangle substrate integration wave-guide resonator
The bandwidth of two passbands；
(3) centre frequency meets high frequency requirements, and controllable within the specific limits, and insertion loss is small, return loss due to-
18dB, and the duplexer of the structure has excellent selectivity.
(4) using the mould and quadratic modes and the substrate collection close to square of rectangle substrate integration wave-guide resonator
It is coupled into wave-guide cavity wave, spuious in two passbands, the isolation of increase duplexer can be reduced as far as possible.
The present invention is described in further detail with reference to the accompanying drawings and detailed description.
Brief description of the drawings
Fig. 1 is the dimensional structure diagram for the duplexer that the present invention shares chamber based on rectangle substrate integrated waveguide.
Fig. 2 is Fig. 1 structural representations at the middle and upper levels.
Fig. 3 is the frequency response characteristic of embodiment.
In figure, 1 incoming feeder, 2 low frequency output feeders, 3 high frequency output feeder lines, 4 metal ground planes, 5 medium substrates, 6 gold medals
Categoryization through hole, 7 metal levels,
A shares chamber, b the first low-frequency rectangular chambers, c the second low-frequency rectangular chambers, e the first high frequency rectangular chambers, the high frequency rectangulars of d second
Chamber.
Embodiment
As shown in figure 1, duplexer of the present invention based on the shared chamber of rectangle substrate integrated waveguide, including Rectangular Enclosure with Participating Media substrate 5,
Completely it is affixed on the metal ground plane 4 of the lower surface of medium substrate 5 and is attached at the metal level 3 of the upper surface of medium substrate 5, in addition to
Multiple plated-through holes 6 that metal level 3 and ground plane 4 are connected through medium substrate 5；
It is low that the multiple plated-through hole 6 encloses the shared chamber a and adjacent with the long sides of shared chamber a mono- first of a rectangle
Frequency rectangular cavity b and the first high frequency rectangular chamber e, and respectively with the first low-frequency rectangular chamber b the second low-frequency rectangular chamber c connected and with
First high frequency rectangular chamber e connect with the second high frequency rectangular chamber d；
The first low-frequency rectangular chamber b and the first high frequency rectangular chamber e plated-through holes 6 shared with a row are mutually separated, the
Two low-frequency rectangular chamber c and the second high frequency rectangular chamber d plated-through holes 6 shared with a row are mutually separated；
Row's plated-through hole 6 shared second low-frequency rectangular chamber c and the first low-frequency rectangular chamber b is present for low frequency letter
Number coupling window passed through, the second high frequency rectangular chamber d and the first high frequency rectangular chamber e shared row's plated-through hole 6 is present for high
The coupling window that frequency signal passes through；
Another side relative with the first high frequency rectangular chamber e with the first low-frequency rectangular chamber b the shared chamber a is provided with incoming feeder
1, the input of the incoming feeder 1 is located on the first short side of medium substrate 5；
Another side relative with the first low-frequency rectangular chamber b the second low-frequency rectangular chamber c is provided with low frequency output feeder 2, institute
The output end for stating low frequency output feeder 2 is located on the second short side of medium substrate 5；
Another side relative with the first high frequency rectangular chamber e the second high frequency rectangular chamber d is provided with high frequency output feeder line 3, institute
The output end for stating high frequency output feeder line 3 is located on the second short side of medium substrate 5.
As shown in Fig. 2 row's plated-through hole 6 that the first low-frequency rectangular chamber b and shared chamber a is shared, which exists, supplies low frequency
The coupling window that signal passes through,
Row's plated-through hole 6 that the first high frequency rectangular chamber e and shared chamber a is shared has what is passed through for high-frequency signal
Coupling window.
The shared chamber a can be operated in low order mode TE respectively101Or higher mode TE201Under pattern.
The input port 1, low frequency output feeder 2, high frequency output feeder line 3 are 50 ohm microstrips.
Preferably, the diameter d of plated-through hole 6 is 0.6mm, and the spacing p of adjacent metal through hole 6 is 1mm.
Fig. 3 is the frequency response characteristic of embodiment.
As can be seen from Figure 3, the present invention based on rectangle substrate integrated waveguide share chamber duplexer passband difference 14.2~
14.8GHz and 16.2~17.2GHz, is medium from Rogers RT 5880, dielectric constant is 2.2.Dielectric thickness is
0.508mm.Insertion loss in passband is less than 1dB, and return loss is better than -18dB, and size is only 23mm*40mm.Isolation is big
In -25dB.
As shown in Fig. 2 the distributing point height T of regulation rectangle substrate waveguide resonant cavityioBranching filter can be controlled
Bandwidth ratio, lsThe bandwidth of branching filter can be controlled.The centre frequency of duplexer is by the side of rectangle substrate integration wave-guide
Long l1And W1Determine.l1And W1Length determine rectangle substrate integration wave-guide resonator resonant frequency size, that is, determine
The centre frequency of branching filter is determined.The size of coupling window is adjusted, the coupling between resonator can be controlled, is reached preferably
Band internal characteristic requirement.In this example, first determine to share the size of chamber, that is, determine the centre frequency of duplexer, and then calculate other 4
The size of individual substrate integration wave-guide resonator, completing middle frequency as depicted finally by the Coupling Design between regulation chamber is
14.5GHz, 16.7GHz bandpass filter.The design parameter of the present embodiment is as follows：
l1=20.4mm, W1=7.35mm, l2 I=10.7mm, W2 I=9mm, l2 II=8mm, W2 II=9mm, l3 I=
10.7mm,
W3 I=9mm, l3 II=8.05mm, W3 II=9mm, W12 I=4.31mm, W23 I=3.82mm, W12 II=4.35mm,
W23 II=4.03mm.
This example is emulated using the full-wave electromagnetic simulation software HFSS of ANSYS companies, frequency response curve such as Fig. 3 institutes
Show, passband difference 14.2~14.8GHz and 16.2~17.2GHz, the insertion loss in passband is less than 1dB, return loss better than-
18dB, size is only 23mm*40mm.Isolation is more than -25dB.Design objective is met, meets application request.
The overall dimensions that chamber efficiently reduces duplexer are shared present invention employs rectangle substrate integrated waveguide, contrast is passed
The duplexer design of system, shared cavity configuration eliminates power splitter part, directly divided in cavity, is effectively improved duplexer
Integrated level.The square chamber substrate integration wave-guide coupling of coupling window is opened in cavity, it is easy to regulation and implementation.The design Liang Ge branches
Wave filter employs three rank rectangle substrate integrated wave-guide cavity waves and couples the form to form passband, effectively increases this duplex
The isolation of device.
Claims (5)
1. a kind of duplexer that chamber is shared based on rectangle substrate integrated waveguide, it is characterised in that：
Including Rectangular Enclosure with Participating Media substrate (5), completely it is affixed on the metal ground plane (4) of the medium substrate (5) lower surface and is attached at Jie
The metal level (7) of matter substrate (5) upper surface, in addition to it is multiple through medium substrate (5) connection metal level (7) and ground plane (4)
Plated-through hole (6)；
The multiple plated-through hole (6) encloses a rectangle and shares chamber (a) and adjacent with the long side of shared chamber (a) one first
Low-frequency rectangular chamber (b) and the first high frequency rectangular chamber (e), and the second low frequency square connected respectively with the first low-frequency rectangular chamber (b)
Shape chamber (c) and connect with the first high frequency rectangular chamber (e) with the second high frequency rectangular chamber (d)；
The plated-through hole (6) that the first low-frequency rectangular chamber (b) is shared with the first high frequency rectangular chamber (e) with a row is mutually separated,
The plated-through hole (6) that second low-frequency rectangular chamber (c) is shared with the second high frequency rectangular chamber (d) with a row is mutually separated；
The second low-frequency rectangular chamber (c) exists with the shared row's plated-through hole (6) of the first low-frequency rectangular chamber (b) supplies low frequency
The coupling window that signal passes through, the second high frequency rectangular chamber (d) and the shared row's plated-through hole (6) of the first high frequency rectangular chamber (e)
In the presence of the coupling window passed through for high-frequency signal；
Presented provided with input the shared chamber (a) another side relative with the first high frequency rectangular chamber (e) with the first low-frequency rectangular chamber (b)
Line (1), the input of the incoming feeder (1) is located on the first short side of medium substrate (5)；
The second low-frequency rectangular chamber (c) another side relative with the first low-frequency rectangular chamber (b) is provided with low frequency output feeder (2),
The output end of the low frequency output feeder (2) is located on the second short side of medium substrate (5)；
The second high frequency rectangular chamber (d) another side relative with the first high frequency rectangular chamber (e) is provided with high frequency output feeder line (3),
The output end of the high frequency output feeder line (3) is located on the second short side of medium substrate (5).
2. duplexer according to claim 1, it is characterised in that：
The first low-frequency rectangular chamber (b) row plated-through hole (6) shared with shared chamber (a) is present to be passed through for low frequency signal
Coupling window,
The first high frequency rectangular chamber (e) row plated-through hole (6) shared with shared chamber (a) is present to be passed through for high-frequency signal
Coupling window.
3. duplexer according to claim 1, it is characterised in that：
The shared chamber (a) can be operated in low order mode TE respectively101Or higher mode TE201Under pattern.
4. duplexer according to claim 1, it is characterised in that：
The input port (1), low frequency output feeder (2), high frequency output feeder line (3) are 50 ohm microstrips.
5. duplexer according to claim 1, it is characterised in that：
Plated-through hole (6) the diameter d is 0.6mm, and adjacent metal through hole (6) spacing p is 1mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710445273.0A CN107317075A (en) | 2017-06-14 | 2017-06-14 | The duplexer of chamber is shared based on rectangle substrate integrated waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710445273.0A CN107317075A (en) | 2017-06-14 | 2017-06-14 | The duplexer of chamber is shared based on rectangle substrate integrated waveguide |
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| Publication Number | Publication Date |
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| CN107317075A true CN107317075A (en) | 2017-11-03 |
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ID=60181853
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| CN201710445273.0A Pending CN107317075A (en) | 2017-06-14 | 2017-06-14 | The duplexer of chamber is shared based on rectangle substrate integrated waveguide |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110581335A (en) * | 2019-08-16 | 2019-12-17 | 南京理工大学 | Sequential feed power distribution network based on substrate integrated waveguide |
| CN111326835A (en) * | 2020-02-28 | 2020-06-23 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Three-dimensional stacked SIW duplexer |
| CN111934073A (en) * | 2020-09-27 | 2020-11-13 | 成都频岢微电子有限公司 | Miniaturized wide stop band filter based on micro-strip and substrate integrated waveguide mixing |
| CN112271421A (en) * | 2020-09-27 | 2021-01-26 | 西安电子科技大学 | Glass-based high-isolation three-dimensional duplexer |
| US11901601B2 (en) | 2020-12-18 | 2024-02-13 | Aptiv Technologies Limited | Waveguide with a zigzag for suppressing grating lobes |
| US11949145B2 (en) | 2021-08-03 | 2024-04-02 | Aptiv Technologies AG | Transition formed of LTCC material and having stubs that match input impedances between a single-ended port and differential ports |
| US11962085B2 (en) | 2021-05-13 | 2024-04-16 | Aptiv Technologies AG | Two-part folded waveguide having a sinusoidal shape channel including horn shape radiating slots formed therein which are spaced apart by one-half wavelength |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110581335A (en) * | 2019-08-16 | 2019-12-17 | 南京理工大学 | Sequential feed power distribution network based on substrate integrated waveguide |
| CN110581335B (en) * | 2019-08-16 | 2021-06-08 | 南京理工大学 | Sequential feed power distribution network based on substrate integrated waveguide |
| CN111326835A (en) * | 2020-02-28 | 2020-06-23 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Three-dimensional stacked SIW duplexer |
| CN111326835B (en) * | 2020-02-28 | 2021-03-05 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Three-dimensional stacked SIW duplexer |
| CN111934073A (en) * | 2020-09-27 | 2020-11-13 | 成都频岢微电子有限公司 | Miniaturized wide stop band filter based on micro-strip and substrate integrated waveguide mixing |
| CN112271421A (en) * | 2020-09-27 | 2021-01-26 | 西安电子科技大学 | Glass-based high-isolation three-dimensional duplexer |
| CN112271421B (en) * | 2020-09-27 | 2021-11-26 | 西安电子科技大学 | Glass-based high-isolation three-dimensional duplexer |
| US11901601B2 (en) | 2020-12-18 | 2024-02-13 | Aptiv Technologies Limited | Waveguide with a zigzag for suppressing grating lobes |
| US11962085B2 (en) | 2021-05-13 | 2024-04-16 | Aptiv Technologies AG | Two-part folded waveguide having a sinusoidal shape channel including horn shape radiating slots formed therein which are spaced apart by one-half wavelength |
| US11949145B2 (en) | 2021-08-03 | 2024-04-02 | Aptiv Technologies AG | Transition formed of LTCC material and having stubs that match input impedances between a single-ended port and differential ports |
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Application publication date: 20171103 |