CN110581184A - Heterojunction solar cell and manufacturing process thereof - Google Patents
Heterojunction solar cell and manufacturing process thereof Download PDFInfo
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- CN110581184A CN110581184A CN201910864122.8A CN201910864122A CN110581184A CN 110581184 A CN110581184 A CN 110581184A CN 201910864122 A CN201910864122 A CN 201910864122A CN 110581184 A CN110581184 A CN 110581184A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 59
- 239000010408 film Substances 0.000 claims abstract description 54
- 239000010409 thin film Substances 0.000 claims abstract description 49
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 24
- 238000000231 atomic layer deposition Methods 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002352 surface water Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
A heterojunction solar cell and a manufacturing process thereof belong to the field of crystalline silicon solar cells, and particularly relate to a heterojunction solar cell and a manufacturing process thereof. The invention provides a heterojunction solar cell with good waterproofness and strong reliability, and a manufacturing process of the heterojunction solar cell with high production efficiency and good product quality. The heterojunction solar cell comprises a first ITO transparent conductive thin film layer, a first doped amorphous silicon thin film layer, a first intrinsic amorphous silicon thin film layer, an N-type monocrystalline silicon piece, a second intrinsic amorphous silicon thin film layer, a second doped amorphous silicon thin film layer and a second ITO transparent conductive thin film layer which are sequentially arranged from top to bottom, and is characterized in that: a water vapor barrier layer film is arranged below the second ITO transparent conductive film layer; and metal grid line electrodes are arranged above the first ITO transparent conductive film layer and below the water vapor barrier layer film, wherein the metal grid line electrodes are arranged at 0.
Description
Technical Field
The invention belongs to the field of crystalline silicon solar cells, and particularly relates to a heterojunction solar cell and a manufacturing process thereof.
background
The heterojunction battery has the characteristics of few process steps, high conversion efficiency, low temperature coefficient, double-sided power generation and the like, is favored by a plurality of research and development institutions and manufacturers, and becomes one of the more popular high-efficiency technologies.
At present, the technological process for manufacturing heterojunction batteries by most domestic manufacturers is as follows: texturing and cleaning, amorphous silicon film deposition, transparent conductive film deposition and metallization. Wherein, the texture-making cleaning generally adopts a method of forming pyramid texture surface by low-concentration alkali liquor. The amorphous silicon film deposition is divided into two modes of PECVD and HWCVD, the PECVD process is simple, but ion bombardment exists; the HWCVD method has good film quality but frequent maintenance. The transparent conductive film deposition is divided into two modes of PVD and RPD, the PVD process is mature, the cost is low, but the long-wave transmittance is low; the RPD film has good performance, but high cost and complex maintenance. The metallization mode generally comprises two processes of silver paste printing and copper grid electrodes, and the silver paste printing process is mature, but has high cost and weaker adhesion; the copper grid process has low cost and good conductivity, but has more working procedures and is more complicated.
Since the heterojunction battery is sensitive to water vapor, the water vapor enters the battery to cause the performance reduction of the battery. After the battery is packaged into a component, the front surface of the component is made of glass, and the water permeability of the glass is very low; if the back surface is a back plate or a transparent back plate material, moisture may penetrate through the back plate from the back surface of the battery into the battery to cause the performance of the battery to be reduced after long-term use, especially in an environment with high humidity. How to prevent or reduce the ingress of moisture into the interior of the heterojunction cell is a very important reliability issue.
Disclosure of Invention
Aiming at the problems, the invention provides the heterojunction solar cell with good waterproofness and strong reliability and the manufacturing process of the heterojunction solar cell with high production efficiency and good product quality.
In order to achieve the above object, the invention adopts the following technical scheme that the heterojunction solar cell comprises a first ITO transparent conductive thin film layer, a first doped amorphous silicon thin film layer, a first intrinsic amorphous silicon thin film layer, an N-type monocrystalline silicon wafer, a second intrinsic amorphous silicon thin film layer, a second doped amorphous silicon thin film layer and a second ITO transparent conductive thin film layer, which are sequentially arranged from top to bottom, and is characterized in that: a water vapor barrier layer film is arranged below the second ITO transparent conductive film layer; and metal grid line electrodes are arranged above the first ITO transparent conductive film layer and below the water vapor barrier layer film.
As a preferred scheme of the heterojunction solar cell of the invention, the first amorphous silicon thin film layer is an N-type amorphous silicon thin film layer; the second amorphous silicon thin film layer is a P-type amorphous silicon thin film layer.
As another preferred scheme of the heterojunction solar cell of the invention, the first amorphous silicon thin film layer is a P-type amorphous silicon thin film layer; the second amorphous silicon thin film layer is an N-type amorphous silicon thin film layer.
The manufacturing process of the heterojunction solar cell comprises the following steps.
1) And (4) texturing and cleaning the N-type monocrystalline silicon wafer.
2) And depositing an intrinsic amorphous silicon film and a doped amorphous silicon film by CVD respectively.
3) And carrying out PVD deposition on the ITO conductive thin film layer.
4) and (5) coating a water vapor barrier layer film.
5) And manufacturing a metal electrode to finish the manufacture of the heterojunction solar cell.
the method is characterized in that: and 4, coating a film on the water vapor barrier layer, and growing the film by adopting an ALD (atomic layer deposition) method.
As a preferable scheme of the manufacturing process of the heterojunction solar cell, the ALD deposition method adopts a microwave excitation mode.
Furthermore, a gas box connected with a deposition gas source is arranged at the top of the deposition chamber, and gas distribution holes are uniformly distributed in the bottom surface of the gas box.
Furthermore, the inner top surface of the gas box is polished, the surface is smooth, and the flatness is 5-20 mu m.
The invention has the beneficial effects.
By adopting the technical scheme, after the texturing cleaning and the amorphous silicon film deposition are finished, the ITO film and the water vapor barrier layer are respectively deposited; the water vapor barrier layer is only grown on the back of the cell, so that water vapor is prevented from entering the cell from the back, and finally the metal electrode is manufactured, so that the manufacture of the heterojunction solar cell is completed. The structure of the cell is characterized in that a water vapor barrier layer film is deposited on the back surface, and the ALD mode is adopted for deposition, so that the thickness is accurately controlled, and the uniformity is good. The film has the characteristics of low water permeability and good light transmittance. After the battery is manufactured into the assembly using the back plate, the water vapor permeation resistance of the assembly is stronger, and the battery performance reduction caused by the fact that water vapor enters the battery from the back plate is prevented, so that the reliability of the assembly is improved. Therefore, the invention provides a manufacturing scheme of the heterojunction battery with high conversion efficiency and high reliability, and has very important significance for the mass production and development of the heterojunction battery.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of a heterojunction solar cell of the invention.
Fig. 2 is a schematic structural view of another embodiment of the heterojunction solar cell of the invention.
FIG. 3 is a schematic diagram of a conventional atomic deposition process using ALD.
FIG. 4 is a schematic view of the atomic deposition process by ALD of the present invention.
in the attached drawing, 1 is an N-type monocrystalline silicon wafer, 2 is an intrinsic amorphous silicon film layer, 3 is an N-type amorphous silicon film layer, 4 is a P-type amorphous silicon film layer, 5 is an ITO transparent conductive film layer, 6 is a water vapor barrier layer film, and 7 is a metal grid line electrode.
Detailed Description
The heterojunction solar cell comprises a first ITO transparent conductive thin film layer, a first doped amorphous silicon thin film layer, a first intrinsic amorphous silicon thin film layer 2, an N-type monocrystalline silicon piece 1, a second intrinsic amorphous silicon thin film layer 2, a second doped amorphous silicon thin film layer and a second ITO transparent conductive thin film layer 5 which are sequentially arranged from top to bottom, and is characterized in that: a water vapor barrier layer film 6 is arranged below the second ITO transparent conductive film layer 5; and metal grid line electrodes 7 are arranged above the first ITO transparent conductive film layer 5 and below the water vapor barrier layer film 6.
As a preferable scheme of the heterojunction solar cell of the invention, the first amorphous silicon thin film layer is an N-type amorphous silicon thin film layer 3; the second amorphous silicon film layer is a P-type amorphous silicon film layer 4.
As another preferred scheme of the heterojunction solar cell of the invention, the first amorphous silicon thin film layer is a P-type amorphous silicon thin film layer 4; the second amorphous silicon film layer is an N-type amorphous silicon film layer 3.
The manufacturing process of the heterojunction solar cell comprises the following steps.
1) And (3) performing texturing cleaning on the N-type monocrystalline silicon wafer 1.
2) And depositing an intrinsic amorphous silicon film and a doped amorphous silicon film by CVD respectively.
3) And carrying out PVD deposition on the ITO conductive thin film layer.
4) A water vapor barrier film 6 is coated.
5) And manufacturing a metal electrode to finish the manufacture of the heterojunction solar cell.
The method is characterized in that: and 4, coating a water vapor barrier layer thin film 6, and growing by adopting an ALD (atomic layer deposition) method.
As a preferable scheme of the manufacturing process of the heterojunction solar cell, the ALD deposition method adopts a microwave excitation mode.
Furthermore, a gas box connected with a deposition gas source is arranged at the top of the deposition chamber, and gas distribution holes are uniformly distributed in the bottom surface of the gas box.
Furthermore, the inner top surface of the gas box is polished, the surface is smooth, and the flatness is 5-20 mu m.
The N-type silicon wafer can be thinned by adopting alkaline solution corrosion, wherein the alkaline solution is KOH solution, the size of the texture surface is 1-12 um, the reflectivity is less than 14%, preferably 5um, and the reflectivity is 13%; the amorphous silicon film is formed by deposition in a PECVD mode, wherein the thickness of intrinsic amorphous is 1-20 nm, preferably 8nm, the thickness of a P-type emitter amorphous silicon layer is 1-30 nm, preferably 16nm, and the thickness of an N-type back surface field amorphous silicon layer is 1-30 nm, preferably 6 nm; the thickness of the ITO film deposited by PVD is 60-120 nm, the sheet resistance is 20-50 ohm/□, the preferable thickness is 100nm, and the sheet resistance is 25 ohm/□; the ALD deposited back surface water vapor barrier layer TaN is 5nm thick; the metal electrode can be Ag, the electrode width is 50um, and the electrode thickness is 30 um.
The alkaline solution adopted for thinning the N-type silicon wafer can also be NaOH solution, the size of the texture surface is 2um, and the reflectivity is 12%; the amorphous silicon thin film is formed by depositing in a HWCVD mode, wherein the thickness of an intrinsic amorphous silicon is 10nm, the thickness of a P-type amorphous silicon is 8nm, and the thickness of an N-type amorphous silicon is 20 nm; the thickness of the ITO film deposited by PVD is 110nm, and the sheet resistance is 30 ohm/□; the thickness of the TiN on the backside vapor barrier layer deposited by ALD is 5 nm; the metal electrode can be Cu, and the electrode width is 40um, and electrode thickness is 25 um.
The water vapor barrier layer is made of titanium nitride or tantalum nitride, the barrier layer is grown by adopting an Atomic Layer Deposition (ALD) method, the thickness of the barrier layer is 1-10 nm, and the film has the characteristics of low water permeability and good light transmittance. Compared with the traditional PVD mode, the titanium nitride or the tantalum nitride produced by ALD has the advantages of accurately controllable thickness and very good uniformity, and is very suitable for uniform deposition of ultrathin films. However, the conventional ALD method has a slow deposition rate and a low productivity, and is very not favorable for the industrial popularization of the water vapor barrier layer, and has limitations.
The ALD deposition scheme of the invention adopts a microwave-excited ALD mode, and can quickly dissociate the source precursor and provide active groups required by reaction due to the higher energy density of microwaves, so that the deposition rate of the water vapor barrier layer is improved by 20-50% compared with thermal excitation, optical excitation or radio frequency excitation. In addition, the invention adopts a novel spray-type gas path layout, so that the source precursor on the deposition surface of the silicon wafer can quickly reach a saturated state, and the process time is reduced by 30 percent; meanwhile, the dosage of the source precursor is effectively controlled, the source dosage is reduced by 20 percent, and the production cost is reduced.
It should be understood that the detailed description of the present invention is only for illustrating the present invention and is not limited by the technical solutions described in the embodiments of the present invention, and those skilled in the art should understand that the present invention can be modified or substituted equally to achieve the same technical effects; as long as the use requirements are met, the method is within the protection scope of the invention.
Claims (7)
1. Heterojunction solar cell, including the transparent conductive thin film layer of first ITO, first doping amorphous silicon thin film layer, first intrinsic amorphous silicon thin film layer (2), N type monocrystalline silicon piece (1), the intrinsic amorphous silicon thin film layer of second (2), the transparent conductive thin film layer of second doping amorphous silicon thin film layer and second ITO (5) that from top to bottom set gradually, its characterized in that: a water vapor barrier layer film (6) is arranged below the second ITO transparent conductive film layer (5); and metal grid line electrodes (7) are arranged above the first ITO transparent conductive film layer (5) and below the water vapor barrier layer film (6).
2. The heterojunction solar cell of claim 1, wherein: the first amorphous silicon thin film layer is an N-type amorphous silicon thin film layer (3); the second amorphous silicon thin film layer is a P-type amorphous silicon thin film layer (4).
3. The heterojunction solar cell of claim 1, wherein: the first amorphous silicon thin film layer is a P-type amorphous silicon thin film layer (4); the second amorphous silicon thin film layer is an N-type amorphous silicon thin film layer (3).
4. A process for fabricating a heterojunction solar cell as claimed in any of claims 1 to 3, comprising the steps of:
1) Performing texturing and cleaning on the N-type monocrystalline silicon wafer;
2) Depositing an intrinsic amorphous silicon film and a doped amorphous silicon film respectively by CVD;
3) PVD-deposited ITO conductive thin film layer
4) Film of film-coated water vapor barrier layer
5) Manufacturing a metal electrode to finish the manufacture of the heterojunction solar cell;
The method is characterized in that: and 4, coating a film on the water vapor barrier layer, and growing the film by adopting an ALD (atomic layer deposition) method.
5. The process of claim 4, wherein: the ALD deposition method adopts a microwave excitation mode.
6. The process of claim 5, wherein: the top of the deposition chamber is provided with a gas box connected with a deposition gas source, and the bottom surface of the gas box is uniformly provided with gas distribution holes.
7. The process of claim 6, wherein: the polishing treatment of the inner top surface of the gas box has smooth surface and flatness of 5-20 mu m.
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| CN201910864122.8A CN110581184A (en) | 2019-09-12 | 2019-09-12 | Heterojunction solar cell and manufacturing process thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910864122.8A CN110581184A (en) | 2019-09-12 | 2019-09-12 | Heterojunction solar cell and manufacturing process thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111524988A (en) * | 2020-05-29 | 2020-08-11 | 苏州福斯特光伏材料有限公司 | Local water-blocking solar cell panel and preparation method thereof |
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- 2019-09-12 CN CN201910864122.8A patent/CN110581184A/en active Pending
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| CN1659309A (en) * | 2002-04-11 | 2005-08-24 | 微米技术有限公司 | Deposition methods utilizing phased array microwave excitation, and deposition apparatuses |
| CN103180970A (en) * | 2010-10-26 | 2013-06-26 | 国际商业机器公司 | Diffusion barrier layer for thin film solar cell |
| CN106098801A (en) * | 2016-06-23 | 2016-11-09 | 盐城普兰特新能源有限公司 | A kind of heterojunction solar battery and preparation method thereof |
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Application publication date: 20191217 |