CN110571203A - Heat dissipation device for IGBT module - Google Patents
Heat dissipation device for IGBT module Download PDFInfo
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- CN110571203A CN110571203A CN201910763082.8A CN201910763082A CN110571203A CN 110571203 A CN110571203 A CN 110571203A CN 201910763082 A CN201910763082 A CN 201910763082A CN 110571203 A CN110571203 A CN 110571203A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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Abstract
The invention provides a heat dissipation device for an IGBT module, which comprises: the heat radiator comprises a main heat radiator (1), wherein two first low-melting-point metal runners (113) with opposite flow directions are arranged in the main heat radiator (1), and the main heat radiator (1) is provided with a first end face used for being in contact with an IGBT module (8); and the inlet of the auxiliary radiator (2) is communicated with the outlets of the two first low-melting-point metal flow channels (113), and the outlet of the auxiliary radiator (2) is communicated with the inlets of the two first low-melting-point metal flow channels (113) through a driving structure (3). Two first low-melting-point metal runners with opposite flow directions are arranged in the main radiator, so that the heat dissipation of the IGBT device with high heat flow density is more balanced; the auxiliary radiator can be arranged to cool the high-temperature low-melting-point metal working medium flowing out of the main radiator.
Description
Technical Field
The invention relates to the technical field of heat dissipation of electronic products, in particular to a heat dissipation device for an IGBT module.
Background
An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device consisting of a Bipolar Junction Transistor (BJT) and a Metal Oxide Semiconductor (MOS), and has the advantages of both high input impedance of the MOSFET and low conduction voltage drop of the GTR. The IGBT integrates the advantages of the two devices, not only has small driving power, but also has reduced saturation voltage, thereby being widely applied to the fields of current transformation systems such as alternating current motors, frequency converters, switching power supplies, lighting circuits, traction transmission and the like.
the capacity of the high-power IGBT module is large, the on-off current is also large, and the performance of the cooling system can directly influence the performance of the module and even the system. With the continuous improvement of the integration level and power density of power devices, the current commonly used heat dissipation methods such as water cooling, air cooling and the like are difficult to meet the requirements. Therefore, heat transfer working media represented by gallium-based low-melting-point metal are gradually replacing water in partial fields as cooling working media of the radiator.
The low-melting-point metal is also called liquid metal, has a lower melting point and a larger difference value of the melting points, and can be conveniently used as a cooling working medium to be applied to a radiator; the low-melting-point metal has the characteristics of higher thermal conductivity, good fluidity, difficult evaporation and leakage, stable physicochemical properties and the like, is driven by an electromagnetic pump without any moving part, has high driving efficiency and low energy consumption, and hardly has any noise, and is driven by an electromagnetic pump without any moving part; therefore, low melting point metals are more advantageous than water in high power, high power density applications.
The runner of current low melting point metal radiator all adopts one-way runner, and mostly is snakelike, and nevertheless one-way runner can produce the inhomogeneous problem of heat dissipation, and IGBT mainly works in high-pressure heavy current occasion, and this probably leads to cooling working medium export near temperature far above the entrance temperature and takes place the heat accumulation and cause whole module to become invalid in the exit under IGBT module in-service use operating mode. Therefore, it is important to ensure the uniformity of heat dissipation under high heat productivity conditions such as high-power IGBT modules.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defect of uneven heat dissipation of the low melting point metal heat sink in the prior art, so as to provide a heat dissipation device for an IGBT module, so that the heat dissipation of the IGBT device with high heat flux density is more balanced, and further, the working reliability and the service life of the high power IGBT module are improved.
Therefore, the invention provides the following technical scheme:
A heat dissipation device for an IGBT module, comprising:
The main radiator is internally provided with two first low-melting-point metal runners with opposite flow directions and is provided with a first end face used for being in contact with the IGBT module;
and the inlet of the auxiliary radiator is communicated with the outlets of the two first low-melting-point metal runners, and the outlet of the auxiliary radiator is communicated with the inlets of the two first low-melting-point metal runners through a driving structure.
Further, the two first low-melting-point metal flow channels are distributed in a serpentine shape in the main radiator.
Further, the first low-melting-point metal flow channel is arranged in an axisymmetric manner.
Furthermore, inlets and outlets of the two first low-melting-point metal runners are respectively communicated with the driving structure and the auxiliary radiator through a first three-way pipeline and a second three-way pipeline.
Further, the main heat radiator comprises a main heat transfer plate and a main heat dissipation row, the main heat dissipation row is arranged on a second end face, opposite to the first end face, of the main heat transfer plate, and the two first low-melting-point metal flow channels are arranged on the main heat transfer plate.
Furthermore, the auxiliary radiator comprises an auxiliary radiating plate and two auxiliary radiating rows respectively arranged on two opposite end faces of the auxiliary radiating plate, and a second low-melting-point metal flow channel is arranged in the auxiliary radiating plate.
Furthermore, the second low-melting-point metal flow channel is in a one-way snake shape, and the corner of the flow channel is in a circular arc shape, so that the low-melting-point metal can flow conveniently, and the problem that the place with large flow resistance is not easy to radiate heat is solved.
Furthermore, the main radiating bar and the auxiliary radiating bar both comprise two radiating plates and a plurality of radiating columns clamped between the two radiating plates, and the plurality of radiating columns are distributed at intervals.
Further, the main heat dissipation bar and the auxiliary heat dissipation bar are made of metal alloy, and the metal alloy comprises the following components in percentage by mass: 2-5% of silicon, 1-3% of iron, 8-12% of copper, 1-2% of titanium, 2-5% of zinc, 0.2-0.5% of chromium, and the balance of aluminum and a small amount of impurities.
Further, the main heat transfer plate, the auxiliary heat dissipation plate, the first three-way pipe and the second three-way pipe are made of the following materials in percentage by mass: 0.2-0.5% of manganese, less than or equal to 0.2% of carbon, less than or equal to 0.02% of sulfur, 8-10% of iron, and the balance of copper and a small amount of impurities.
further, the contact surface of the IGBT module and the main heat transfer plate, the contact surface of the main heat transfer plate and the main heat dissipation bar, and the contact surface of the auxiliary heat dissipation plate and the auxiliary heat dissipation bar are made of the following materials by mass percent: 8-10% of 500mPa s methyl silicone oil and 30 mu m Al2O340% and 10 μm particle diameter Al2O320% and 2 μm particle diameter Al2O36 to 8 percent of ZnO 22 percent with the grain diameter of 1 mu mAnd 2-3% of Al with a particle size of 2 μm.
Furthermore, the auxiliary heat dissipation plate is provided with a liquid inlet and a liquid outlet, so that the low-melting-point metal cooling working medium can be conveniently injected and replaced.
Furthermore, the auxiliary radiator liquid inlet, the liquid outlet and each joint are provided with a protection device, and the low melting point metal has conductivity, so that the protection devices are arranged at the auxiliary radiator liquid inlet, the liquid outlet and each joint of the auxiliary radiator and the auxiliary radiator, and can be used for preventing working medium leakage and dust.
The technical scheme of the invention has the following advantages:
1. According to the heat dissipation device for the IGBT module, the two first low-melting-point metal runners with opposite flow directions are arranged in the main heat dissipater, so that heat dissipation of an IGBT device with high heat flow density is more balanced; the auxiliary radiator can be arranged to cool the high-temperature low-melting-point metal working medium flowing out of the main radiator; the heat dissipation device for the IGBT module provided by the invention can improve the working reliability and service life of the high-power IGBT module; and the capability of the IGBT device for coping with extreme working conditions can be effectively improved.
2. According to the heat dissipation device for the IGBT module, the two first low-melting-point metal flow channels in the main heat dissipater are distributed in a snake shape and are arranged in an axisymmetric mode, so that the heat exchange area of the flow channels is increased, the heat transfer capacity and efficiency are improved, and heat dissipation is rapid and uniform.
3. According to the heat dissipation device for the IGBT module, the inlets and the outlets of the two first low-melting-point metal runners are respectively communicated with the driving structure and the auxiliary radiator through the first three-way pipeline and the second three-way pipeline, so that the structure of the whole device is more compact, and meanwhile, the low-melting-point metal heat dissipation medium can be recycled in the heat dissipation device.
4. According to the heat dissipation device for the IGBT module, the main heat dissipation row is arranged on the second end face, opposite to the first end face, of the main heat transfer plate, the two first low-melting-point metal flow channels are arranged on the main heat transfer plate, the highest temperature of the surface of the IGBT module is reduced, and the surface temperature is more balanced.
5. According to the heat dissipation device for the IGBT module, the two auxiliary heat dissipation rows are arranged on the two opposite end faces of the auxiliary heat dissipation plate, the second low-melting-point metal flow channel is arranged in the auxiliary heat dissipation plate, and the high-temperature low-melting-point metal flowing out of the main heat dissipation device is cooled, so that the high-temperature low-melting-point metal flowing out of the main heat dissipation device enters the auxiliary heat dissipation device for heat dissipation and cooling, the low-melting-point metal is cooled when entering the main heat dissipation device again, and the effect of circular heat dissipation is achieved.
6. According to the heat dissipation device for the IGBT module, the two heat dissipation plates and the plurality of heat dissipation columns clamped between the two heat dissipation plates are arranged in the main heat dissipation row and the auxiliary heat dissipation row, and the plurality of heat dissipation columns are distributed at intervals, so that the surface area of the heat dissipation rows can be increased, the heat dissipation effect is enhanced, and the temperature of low-melting-point metal is further reduced.
7. According to the heat dissipation device for the IGBT module, the heat dissipation is promoted by adopting materials with high heat conductivity for all parts and contact surfaces.
Drawings
in order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a heat dissipation device for an IGBT module according to the present invention;
Fig. 2 is a cross-sectional view of a main heat transfer plate in the main radiator in the heat sink for the IGBT module shown in fig. 1;
Fig. 3 is a sectional view of an auxiliary heat dissipating plate in the auxiliary heat sink in the heat dissipating apparatus for an IGBT module shown in fig. 1;
Fig. 4 is a schematic perspective view of the main heat dissipation bar and the auxiliary heat dissipation bar in the heat dissipation apparatus for an IGBT module shown in fig. 1.
Description of reference numerals:
1. A main heat radiator; 11. a main heat transfer plate; 111. a first low-melting metal runner inlet; 112. a first low-melting-point metal runner outlet; 113. a first low-melting-point metal runner; 12. main heat dissipation is arranged; 2. an auxiliary heat sink; 21. an auxiliary heat dissipation plate; 211. a second low-melting-point metal runner; 22. auxiliary heat dissipation is carried out; 3. a drive structure; 4. a first three-way pipe; 5. a second three-way pipe; 6. a liquid inlet; 7. a liquid outlet; 8. an IGBT module.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "right", "left", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the term "communicate" is to be interpreted broadly, e.g. as a fixed connection, a detachable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
in addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
one embodiment of the heat dissipation device for an IGBT module as shown in fig. 1 includes: the low melting point metal flow driving device comprises a main radiator 1, an auxiliary radiator 2 and a driving structure 3 which is arranged between the main radiator 1 and the auxiliary radiator 2 and is used for driving the low melting point metal to flow.
two first low-melting-point metal runners 113 with opposite flow directions are arranged in the main radiator 1, the main radiator 1 is provided with a first end face for contacting with the IGBT module 8, and the IGBT module 8 is arranged on the lower end face of the main radiator in this embodiment. The inlet of the auxiliary radiator 2 is communicated with the outlets of the two first low melting point metal runners 113, and the outlet of the auxiliary radiator 2 is communicated with the inlets of the two first low melting point metal runners 113 through an electromagnetic pump serving as a driving structure 3. Under the driving action of the electromagnetic pump, low-melting-point metal enters the main radiator from different directions through the inlets of the two first low-melting-point metal runners 113 simultaneously, the flowing directions are opposite, so that heat exchange is carried out more fully and uniformly with the IGBT module below, the low-melting-point metal subjected to heat exchange and temperature rise enters the auxiliary radiator 2 through the outlets of the two first low-melting-point metal runners 113 for cooling, the low-melting-point metal subjected to cooling enters the main radiator 1 again under the action of the electromagnetic pump, and the circulation is carried out, so that balanced heat dissipation of the IGBT device with high heat flow density is completed.
As shown in fig. 2, two first low-melting-point metal runners 113 are distributed in a serpentine shape in the main heat sink 1, and have a plurality of bending structures, and the first low-melting-point metal runners 113 are arranged in an axisymmetric manner, that is, peaks and troughs of the plurality of bending structures located at two sides of the symmetry axis are arranged oppositely. Each of the two first low-melting-point metal runners 113 is arranged in parallel, so that the low-melting-point metal in the two first low-melting-point metal pipelines 113 basically flows through the same position of the main radiator 1 for heat exchange, and the uniformity of heat dissipation is further improved.
Alternatively, the two first low-melting-point metal runners 113 may have different shapes, such as a straight line shape and a wave shape.
Specifically, the inlets and outlets of the two first low-melting-point metal runners 113 are respectively communicated with the driving structure 33 and the auxiliary radiator 2 through a first tee pipe 4 and a second tee pipe 5. The inlet of the first low melting point metal runner 113 and the outlet of the second low melting point metal runner 113 are both located on the left side of the main radiator 1, while the outlet of the first low melting point metal runner 113 and the inlet of the second low melting point metal runner 113 are located on the right side of the main radiator, so that in order to ensure that low melting point metal flows into and out of the two first low melting point metal runners simultaneously, two inlets and two outlets located on different sides need to be connected through two tee pipes.
Specifically, the main heat sink 1 includes a main heat transfer plate 11 and a main heat dissipation row 12, the main heat dissipation row 12 is disposed on a second end face of the main heat transfer plate 11 opposite to the first end face, and both the first low-melting-point metal runners 113 are disposed on the main heat transfer plate 11. Main heat dissipation is arranged 12 and IGBT module 8 and is established on two relative terminal surfaces of main heat transfer board 11 branch, and the low melting point metal after the heat transfer just can be through keeping away from the main heat dissipation of arranging 12 that IGBT module 8 set up and cooling of dispelling the heat, prevents that it from contacting with IGBT module 8 once more and carrying out the heat transfer.
Specifically, the auxiliary heat sink 2 includes an auxiliary heat dissipation plate 21 and two auxiliary heat dissipation rows 22 respectively disposed on two opposite end surfaces of the auxiliary heat dissipation plate 21 to form a sandwich structure, and a second low-melting-point metal flow channel 211 is disposed in the auxiliary heat dissipation plate 21. The high-temperature low-melting-point metal flowing out of the main radiator 1 enters the second low-melting-point metal flow channel 211 of the auxiliary radiating plate 21 to be cooled, the discharged heat is outwards radiated through the two auxiliary radiating plates 21 arranged on the two sides, the low-melting-point metal is guaranteed to be cooled when entering the main radiator 1 again, and the effect of circular radiation is achieved.
as shown in fig. 3, the second low-melting-point metal flow channel 211 is a one-way serpentine and a plurality of bending structures are arranged in parallel, and is used for cooling the high-temperature low-melting-point metal.
As an improved embodiment, the second low-melting-point metal flow channel 211 is a one-way serpentine shape, and corners of the flow channel are arc-shaped, so that the low-melting-point metal can flow conveniently, and the problem that heat dissipation is difficult to occur at a place with large flow resistance is reduced.
As shown in fig. 4, each of the main heat dissipation row 12 and the auxiliary heat dissipation row 22 includes two heat dissipation plates and a plurality of heat dissipation columns sandwiched between the two heat dissipation plates, wherein the axial directions of the plurality of heat dissipation columns are perpendicular to the heat dissipation plates to form grid-like intervals, and the intervals are arranged to facilitate heat dissipation.
Specifically, the material of the main heat dissipation bar 12 and the auxiliary heat dissipation bar 22 is a metal alloy, and the metal alloy comprises the following components by mass percent: 2% of silicon, 3% of iron, 12% of copper, 2% of titanium, 5% of zinc, 0.2% of chromium, and the balance of aluminum and a small amount of impurities; the metal alloy has high heat conductivity and is beneficial to heat dissipation.
Specifically, the materials of the main heat transfer plate 11, the auxiliary heat dissipation plate 21, the first three-way pipe 4 and the second three-way pipe 5 are composed of the following components in percentage by mass: 0.5% of manganese, 0.2% of carbon, 0.02% of sulfur, 10% of iron, and the balance of copper and a small amount of impurities.
Specifically, the material of the contact surface between the IGBT module 8 and the main heat transfer plate 11, the contact surface between the main heat transfer plate 11 and the main heat dissipation bank 12, and the contact surface between the auxiliary heat dissipation plate 21 and the auxiliary heat dissipation bank 22 is composed of, by mass: 10% of 500mPa s methyl silicone oil and 30 μm grain size Al2O340% and 10 μm particle diameter Al2O320% and 2 μm particle diameter Al2O38%, ZnO 22% having a particle size of 1 μm, and Al 3% having a particle size of 2 μm.
specifically, the auxiliary heat dissipation plate 21 is provided with a liquid inlet 6 and a liquid outlet 7, so that the low-melting-point metal cooling working medium can be conveniently injected and replaced.
Specifically, the liquid inlet 6, the liquid outlet 7 and each joint of the auxiliary radiator 2 are provided with a protection device, and because the low-melting-point metal has conductivity, the protection devices are arranged at the liquid inlet 6, the liquid outlet 7 and each joint of the auxiliary radiator 2, and can be used for preventing working medium leakage and dust.
When the heat dissipation of the IGBT module 8 is required, firstly, the IGBT module 8 is fixed on the lower end surface of the main heat transfer plate 11, then, the low-melting-point metal is injected into the auxiliary heat sink 2 through the liquid inlet 6, the low-melting-point metal enters the two first low-melting-point metal runners 113 through the first three-way pipe 4 under the action of the electromagnetic pump and flows in the main heat transfer plate 11 in opposite directions to exchange heat with the IGBT module 8, the low-melting-point metal after heat absorption enters the second low-melting-point metal runner 211 through the second three-way pipe 5 to be cooled, heat is conducted to the air through the auxiliary heat dissipation plate 21 and the auxiliary heat dissipation row 22, and the low-melting-point metal after cooling enters the main heat dissipation device 1 through the electromagnetic pump again, and the circulation is performed so as to complete the heat dissipation.
A simulation experiment is carried out on the heat dissipation performance of the existing snakelike single-channel liquid metal radiator and the heat dissipation performance of the heat dissipation device for the IGBT module in the embodiment of the invention by adopting Fluent finite element software: the heating power of the heat source of the heat sink is 1KW, the material of the heat sink is copper, the cooling working medium is gallium, the inlet temperature of the cooling working medium is 50 ℃, and the average flow velocity of the cooling working medium is 1.5 m/s.
The surface temperature range of a heat source of the snakelike single-channel liquid metal radiator is 60.4-67.1 ℃, the surface of the module has a temperature difference of 6.7 ℃ under the current heating power, and the temperature near a cooling working medium outlet is higher than that near an inlet.
The surface temperature range of the heat source of the heat dissipation device is 61.8-66.7 ℃, the surface temperature difference of the heat source is 4.9 ℃, the surface temperature high point of the heat source is positioned at the lower right position of the center of the heat source, namely, is deviated to the outlet direction of the outer side flow channel, because the lengths of the flow channels of the two first low melting point metal flow channels which are arranged in opposite flow directions are slightly different, the length of the outer side flow channel is slightly longer, and the temperature low point is positioned near the inlet of the outer side flow channel.
Therefore, compared with the prior art, the heat dissipation device for the IGBT module provided by the invention has the advantages that the overall temperature of the surface of the heat source is reduced to some extent, the highest temperature of the surface of the heat source is reduced by 0.4 ℃, and the lowest temperature of the surface of the heat source is increased to some extent compared with that of a single channel. The high-temperature cooling working medium at the outlet of one metal flow channel in two first low-melting-point metal flow channels arranged in opposite directions raises the temperature of the cooling working medium at the inlet of the other metal flow channel, and conversely, the low-temperature area of the heat source surface of the single flow channel only exists in a smaller range at the inlet of the flow channel, the temperature at the inlet of the flow channel is higher, the higher temperature has adverse effect on the operation reliability of the IGBT module, and the trend is more obvious along with the increase of the heating power of the heat source; therefore, the heat dissipation device for the IGBT module provided by the invention has better heat dissipation performance than the traditional heat radiator for the high-power IGBT module.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the spirit or scope of the invention.
Claims (10)
1. a heat dissipation device for an IGBT module, comprising:
The heat radiator comprises a main heat radiator (1), wherein two first low-melting-point metal runners (113) with opposite flow directions are arranged in the main heat radiator (1), and the main heat radiator (1) is provided with a first end face used for being in contact with an IGBT module (8);
And the inlet of the auxiliary radiator (2) is communicated with the outlets of the two first low-melting-point metal flow channels (113), and the outlet of the auxiliary radiator (2) is communicated with the inlets of the two first low-melting-point metal flow channels (113) through a driving structure (3).
2. The heat sink for an IGBT module according to claim 1, characterized in that two first low melting point metal runners (113) are distributed in a serpentine shape within the main heat sink (1).
3. The heat sink for an IGBT module according to claim 2, wherein the first low melting point metal runner (113) is axisymmetrically arranged.
4. The heat sink for IGBT modules according to any of claims 1-3, characterized in that the inlets and outlets of the two first low melting metal runners (113) communicate with the driving structure (3) and the auxiliary heat sink (2) through a first tee pipe (4) and a second tee pipe (5), respectively.
5. The heat sink for an IGBT module according to claim 4, characterized in that the main heat sink (1) comprises a main heat transfer plate (11) and a main heat dissipation bar (12), the main heat dissipation bar (12) being provided at a second end face of the main heat transfer plate (11) opposite to the first end face, both first low melting point metal flow channels (113) being provided on the main heat transfer plate (11).
6. The heat dissipation device for the IGBT module according to claim 5, wherein the auxiliary heat sink (2) comprises an auxiliary heat dissipation plate (21) and two auxiliary heat dissipation rows (22) respectively arranged on two opposite end faces of the auxiliary heat dissipation plate (21), and a second low-melting-point metal flow channel (211) is arranged in the auxiliary heat dissipation plate (21).
7. The heat sink for the IGBT module according to claim 6, characterized in that the main heat dissipation row (12) and the auxiliary heat dissipation row (22) each comprise two heat dissipation plates and a plurality of heat dissipation studs sandwiched between the two heat dissipation plates, the heat dissipation studs being spaced apart.
8. The heat sink for an IGBT module according to claim 6, characterized in that the material of the main heat dissipation bank (12) and the auxiliary heat dissipation bank (22) is a metal alloy consisting of, in mass percent: 2-5% of silicon, 1-3% of iron, 8-12% of copper, 1-2% of titanium, 2-5% of zinc, 0.2-0.5% of chromium, and the balance of aluminum and a small amount of impurities.
9. The heat sink for an IGBT module according to claim 6, characterized in that the material of the main heat transfer plate (11), the auxiliary heat sink plate (21), the first tee pipe (4) and the second tee pipe (5) consists of, in mass percent: 0.2-0.5% of manganese, less than or equal to 0.2% of carbon, less than or equal to 0.02% of sulfur, 8-10% of iron, and the balance of copper and a small amount of impurities.
10. The heat sink for the IGBT module according to claim 6, wherein the material of the contact surfaces of the IGBT module (8) and the main heat transfer plates (11), the contact surfaces of the main heat transfer plates (11) and the main heat dissipation bank (12), and the contact surfaces of the auxiliary heat dissipation plates (21) and the auxiliary heat dissipation bank (22) consists of, in mass percent: 8-10% of 500mPa s methyl silicone oil and 30 mu m Al2O340% and 10 μm particle diameter Al2O320% and 2 μm particle diameter Al2O36-8%, ZnO 22% with particle size of 1 μm, and Al 2-3% with particle size of 2 μm.
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| CN201910763082.8A CN110571203A (en) | 2019-08-16 | 2019-08-16 | Heat dissipation device for IGBT module |
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| CN201910763082.8A CN110571203A (en) | 2019-08-16 | 2019-08-16 | Heat dissipation device for IGBT module |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001308245A (en) * | 2000-04-25 | 2001-11-02 | Denso Corp | Refrigerant cooling type both-face cooling semiconductor device |
| CN2575847Y (en) * | 2002-10-10 | 2003-09-24 | 中国科学院理化技术研究所 | Metal air fuel cell capable of changing supplementary fuel |
| CN104538664A (en) * | 2014-12-21 | 2015-04-22 | 北京工业大学 | Cooling system with heat transfer enhancement effect and capable of effectively maintaining temperature uniformity of galvanic pile |
-
2019
- 2019-08-16 CN CN201910763082.8A patent/CN110571203A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001308245A (en) * | 2000-04-25 | 2001-11-02 | Denso Corp | Refrigerant cooling type both-face cooling semiconductor device |
| CN2575847Y (en) * | 2002-10-10 | 2003-09-24 | 中国科学院理化技术研究所 | Metal air fuel cell capable of changing supplementary fuel |
| CN104538664A (en) * | 2014-12-21 | 2015-04-22 | 北京工业大学 | Cooling system with heat transfer enhancement effect and capable of effectively maintaining temperature uniformity of galvanic pile |
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Application publication date: 20191213 |