CN205542899U - Semiconductor refrigeration components - Google Patents

Abstract

The utility model provides a semiconductor refrigeration assembly, comprising: a semiconductor electric couple pair, a cold end substrate connected to the cold end of the semiconductor electric couple pair, a hot end substrate connected to the hot end of the semiconductor electric couple pair, and a liquid cooling device; wherein, The hot end substrate includes a metal substrate, and a thermally conductive insulating layer connected between the metal substrate and the pair of semiconductor couples; the liquid cooling device includes: a liquid cooling base connected to the metal base, and the liquid cooling base and the metal base A liquid tank is provided on the connected mounting surface, and a flowing cooling liquid is provided between the liquid tank and the metal substrate. The semiconductor refrigeration assembly provided by the utility model can improve the heat dissipation rate of the semiconductor couple to the hot end, and can realize high-power refrigeration.

Description

Semiconductor refrigeration components

technical field

The utility model relates to semiconductor refrigeration technology, in particular to a semiconductor refrigeration assembly.

Background technique

Thermoelectric Cooler (TEC, Thermoelectric Cooler) is a cooling device made using the Peltier effect. Its main structure is a pair of semiconductor galvanic couples (also called P-N galvanic couples). After a certain voltage is applied to the pair, there will be a certain temperature difference between the cold end and the hot end of the semiconductor couple. When the heat at the hot end is dissipated, the cold end will generate a certain amount of cold to achieve refrigeration.

FIG. 1 is a schematic structural diagram of a conventional semiconductor refrigeration assembly. As shown in Figure 1, an existing cooling assembly made of a semiconductor refrigeration chip includes a cold end substrate 11, a semiconductor couple pair 12 and a hot end substrate 13, wherein the cold end of the semiconductor couple pair 12 passes through the cold end The electrode 14 is connected to the cold end substrate 11, and the hot end of the semiconductor couple pair 12 is connected to one side surface of the hot end substrate 13 through the hot end electrode 15, specifically by welding. A heat dissipation structure is welded on the other side surface of the hot end substrate 13 , and the heat dissipation structure includes a heat dissipation substrate 16 and fins 17 , wherein the heat dissipation substrate 16 is welded on the hot end substrate 13 . The heat of the hot end of the semiconductor pair 12 is first conducted to the hot end substrate 13 through the solder, and then transferred to the fin 17 through the heat dissipation substrate 16, and the heat exchange with the surrounding air is carried out through the fin 17 to reduce the heat of the hot end of the semiconductor pair 12. .

In the above refrigeration assembly, since the hot end substrate 13 and the heat dissipation substrate 16 are fixed by welding, the heat of the hot end of the semiconductor couple pair 12 is conducted through the hot end substrate 13, the solder and the heat dissipation substrate 16 successively, and the hot end substrate 13 is removed. In addition to the thermal resistance of the heat dissipation substrate 16 itself, the solder between the two also has a large thermal resistance, which seriously affects the heat conduction rate. Moreover, the rate of heat exchange between the fins and the surrounding air is also very low, which also greatly affects the dissipation of heat from the semiconductor couple to the 12 hot ends. Therefore, due to the large thermal resistance of the solder and the slow heat exchange speed between the fins and the air, the existing semiconductor refrigeration components are only suitable for low-power cooling, but cannot achieve high-power cooling.

Utility model content

The utility model provides a semiconductor refrigeration component, which is used for improving the heat dissipation rate of a semiconductor couple to a hot end, and can realize high-power refrigeration.

The utility model provides a semiconductor refrigeration assembly, comprising: a semiconductor electric couple pair, a cold end substrate connected to the cold end of the semiconductor electric couple pair, a hot end substrate connected to the hot end of the semiconductor electric couple pair, and a liquid cooling device; wherein, The hot end substrate includes a metal substrate and a thermally conductive insulating layer connected between the metal substrate and the pair of semiconductor couples;

The liquid cooling device includes: a liquid cooling substrate connected to the metal substrate, a liquid tank is provided on the mounting surface connected to the metal substrate, and a flowing cooling liquid is provided between the liquid storage tank and the metal substrate .

In the semiconductor refrigeration assembly as described above, the inner surface of the bottom wall of the liquid cooling base away from the metal substrate is provided with at least one partition that is against the inner surface of the bottom wall and the metal substrate, and at least one partition will place the liquid The grooves are divided into serpentine liquid flow channels in which the cooling liquid flows.

According to the above semiconductor refrigeration assembly, the surface of the metal substrate facing the liquid cooling base is provided with pits, the number of the pits is at least two, and the at least two pits correspond to the positions of the liquid flow channels.

In the semiconductor refrigeration assembly as described above, a liquid inlet and a liquid outlet are provided on the side wall adjacent to the bottom wall of the liquid cooling base, and the liquid inlet and the liquid outlet are respectively connected to the liquid The positions of the beginning end and the end of the flow channel are corresponding; the liquid inlet and the liquid outlet are also communicated with the external cooling pipeline to form a cooling circuit, and the cooling circuit is provided with a liquid pump.

According to the semiconductor refrigeration assembly as described above, a heat exchanger is further provided on the cooling circuit, and a liquid channel communicating with the cooling pipeline is provided in the heat exchanger.

According to the peltier cooling assembly mentioned above, the liquid cooling device further includes a cooling fan for dissipating heat from the heat exchanger.

According to the peltier cooling assembly mentioned above, the metal substrate is an aluminum substrate.

In the semiconductor refrigeration assembly as described above, at least two metal sheets spaced apart from each other are provided on the surface of the metal substrate facing the liquid cooling base, and the positions of the metal sheets correspond to the positions of the liquid flow channels, and each metal sheet Extend along the length direction of the corresponding liquid channel.

In the semiconductor refrigeration assembly as described above, the surface of the metal substrate facing the liquid cooling base is provided with at least two metal ribs spaced apart from each other and protruding from the surface, and the positions of the metal ribs and the liquid flow channel correspond.

According to the above-mentioned semiconductor refrigeration assembly, a sealing groove is further provided on the installation surface of the liquid cooling base, and a sealing ring is provided in the sealing groove to seal the gap between the liquid cooling base and the metal substrate.

The technical solution adopted in this embodiment connects the hot end surface of the metal substrate with the liquid cooling substrate, and a flowing cooling liquid is provided between the liquid cooling substrate and the metal substrate, and the flowing cooling liquid directly contacts the metal substrate, which can Rapidly absorb the heat of the metal substrate, reduce the temperature of the metal substrate, and further rapidly reduce the temperature of the hot end of the semiconductor couple.

Compared with the way of welding the hot end substrate and the heat dissipation substrate in the prior art, the cooling liquid flowing in the technical solution provided by this embodiment directly contacts the metal substrate, which can quickly dissipate heat from the metal substrate. On the one hand, the heat dissipation of the metal substrate There is no thermal resistance like the solder or the heat dissipation substrate itself in the prior art. On the other hand, the flowing cooling liquid has a large heat capacity, which can absorb a large amount of heat quickly, and then can quickly reduce the temperature of the semiconductor couple to the hot end. , which is conducive to the realization of high-power cooling.

Description of drawings

Fig. 1 is the structural representation of existing a kind of semiconductor refrigeration assembly;

Fig. 2 is an exploded view of the semiconductor refrigeration assembly provided by the embodiment of the present invention;

Fig. 3 is a schematic structural diagram of a semiconductor refrigeration assembly provided by an embodiment of the present invention;

Fig. 4 is the sectional view of A-A section among Fig. 3;

Fig. 5 is another structural schematic diagram of the semiconductor refrigeration assembly provided by the embodiment of the present invention;

Fig. 6 is a schematic structural view of the metal substrate in the semiconductor refrigeration assembly provided by the embodiment of the present invention;

Fig. 7 is the sectional view of B-B section among Fig. 6;

Fig. 8 is another structural schematic diagram of the metal substrate in the semiconductor refrigeration assembly provided by the embodiment of the present invention;

Fig. 9 is a sectional view of the C-C section in Fig. 8;

Fig. 10 is another structural schematic diagram of the metal substrate in the semiconductor refrigeration assembly provided by the embodiment of the present utility model;

FIG. 11 is a sectional view of the D-D section in FIG. 10 .

Reference signs:

11-cold terminal substrate; 12-semiconductor couple pair; 13-hot terminal substrate;

14-cold terminal electrode; 15-hot terminal electrode; 16-heat dissipation substrate;

17-fin; 18-metal substrate; 21-liquid cooling base;

22-liquid tank; 23-baffle; 24-liquid inlet;

25-liquid outlet; 26-cooling pipeline; 27-liquid pump;

28-heat exchanger; 29-cooling fan; 210-sealing groove;

211-sealing ring; 31-dimple; 32-groove;

33 - Metal ribs.

detailed description

Fig. 2 is an exploded view of the semiconductor refrigeration assembly provided by the embodiment of the utility model, Fig. 3 is a schematic structural diagram of the semiconductor refrigeration assembly provided by the embodiment of the utility model, and Fig. 4 is a cross-sectional view of the A-A section in Fig. 3 . This embodiment provides a semiconductor refrigeration assembly, including: a pair of semiconductor thermocouples 12, a cold end substrate 11 connected to the cold ends of the pair of semiconductor thermocouples 12, a hot end substrate connected to the hot ends of the pair of semiconductor thermocouples 12, and a liquid cooling device.

Wherein, the cold end of the semiconductor couple pair (also referred to as a PN couple pair) 12 is connected to the cold end substrate 11 through the cold end electrode 14 , for example, can be welded on the cold end substrate 11 . The cold end substrate 11 can be an Al ₂ O ₃ ceramic substrate or an aluminum substrate, and its area is 70mm×50mm. The hot end of the semiconductor couple pair 12 is connected to the hot end substrate through the hot end electrode 15 , for example, connected to the hot end substrate by welding.

The hot end substrate includes a metal substrate 18 and a thermally conductive insulating layer (not shown in the figure) connected between the metal substrate 18 and the pair of semiconductor couples 12 . Specifically, the surface of the metal substrate 18 facing the pair of semiconductor couples 12 is called the cold end surface, and the surface facing away from the pair of semiconductor couples 12 is called the hot end surface. The thermally conductive insulating layer is laid on the cold end surface of the metal substrate 18 . The hot end of the semiconductor couple pair 12 is connected to the thermally conductive insulating layer through the hot end electrode 15 . In addition, a conductive layer, for example made of copper, is provided between the hot end electrode 15 and the thermally conductive insulating layer.

The liquid cooling device includes: a liquid cooling substrate 21 connected to the hot end surface of the metal substrate 18, the surface of the liquid cooling substrate 21 facing the metal substrate 18 is called the installation surface, the installation surface is connected to the metal substrate 18, and the installation surface is open The liquid tank 22 is provided, and a flowing cooling liquid is provided between the liquid tank 22 and the metal substrate 18 , so that the cooling liquid can directly contact the hot end surface of the metal substrate 18 . The cooling liquid can be a commonly used coolant in the prior art, such as water or a liquid compound with good fluidity. Corrosion occurs.

The technical solution adopted in this embodiment connects the hot end surface of the metal substrate with the liquid cooling substrate, and a flowing cooling liquid is provided between the liquid cooling substrate and the metal substrate, and the flowing cooling liquid directly contacts the metal substrate, which can Rapidly absorb the heat of the metal substrate, reduce the temperature of the metal substrate, and further rapidly reduce the temperature of the hot end of the semiconductor couple.

Compared with the way of welding the hot end substrate and the heat dissipation substrate in the prior art, the cooling liquid flowing in the technical solution provided by this embodiment directly contacts the metal substrate, which can quickly dissipate heat from the metal substrate. On the one hand, the heat dissipation of the metal substrate There is no thermal resistance like the solder or the heat dissipation substrate itself in the prior art. On the other hand, the flowing cooling liquid has a large heat capacity, which can absorb a large amount of heat quickly, and then can quickly reduce the temperature of the semiconductor couple to the hot end. , which is conducive to the realization of high-power cooling.

Moreover, in the prior art, since the bonding method of the heat dissipation substrate and the hot end substrate is surface-to-surface bonding, when the heat dissipation substrate or the hot end substrate is mechanically deformed, even a small deformation will cause a gap between the two. The contact thermal resistance increases, which in turn reduces the efficiency of heat transfer. However, in the above solution provided by this embodiment, the cooling liquid is in contact with the surface of the hot end of the metal substrate for heat exchange. If the surface is a plane, it is equivalent to the heat exchange between the liquid and the plane, and the small deformation on the surface of the metal substrate will not increase. The contact thermal resistance will not affect the heat exchange efficiency, effectively overcome the problem of increased contact thermal resistance caused by surface-to-surface bonding in the prior art, and further have the ability to realize high-power cooling.

Those skilled in the art can understand that a certain sealing means should be adopted between the metal substrate 18 and the liquid cooling base 21 to ensure that the cooling liquid will not leak from the connection gap between the metal base plate 18 and the liquid cooling base 21 . For example, sealant bonding, sealing rings or gaskets are used. In this embodiment, as shown in FIG. 2, a sealing groove 210 is provided on the mounting surface of the liquid cooling base 21. The sealing groove 210 is located on the edge of the liquid storage tank 22. A sealing ring 211 is arranged in the sealing groove 210 to seal the liquid cooling. The gap between the base body 21 and the metal substrate 18 .

For the structure of the above-mentioned liquid cooling matrix, there are many ways to realize it, for example, the following way can be adopted:

As shown in Figures 2 and 4, at least one partition 23 is provided on the inner surface of the bottom wall of the liquid cooling base 21 away from the metal substrate 18, and at least one partition 23 is placed between the inner surface of the bottom wall and the metal substrate 18. The liquid storage tank 22 is divided into serpentine liquid flow channels, and the cooling liquid flows in the serpentine liquid flow channels.

Specifically, the cooling liquid can flow in a set direction while flowing in the serpentine liquid channel, so that the cooling liquid can fully contact with various parts of the metal substrate 18 during the flow process, so as to fully absorb the heat of the metal substrate 18, Further increase the heat absorption of the cooling liquid.

Further, there may be many ways to realize the flow of the cooling liquid in the liquid channel, and this embodiment provides a specific way:

Fig. 5 is another structural schematic diagram of the semiconductor cooling assembly provided by the embodiment of the present invention. As shown in Figures 2, 3, and 5, a liquid inlet 24 and a liquid outlet 25 are arranged on the side wall adjacent to the bottom wall on the liquid cooling base 21, and the liquid inlet 24 and the liquid outlet 25 are connected to the liquid respectively. The positions of the beginning and end of the runner correspond. Moreover, the liquid inlet 24 and the liquid outlet 25 are also connected with the external cooling pipeline 26 to form a cooling circuit. The cooling circuit is provided with a liquid pump 27, and the liquid pump 27 can be powered by DC or AC. Then, under the action of the liquid pump 27 , the cooling liquid can circulate in the cooling pipeline 26 and the liquid flow channel. Liquid pump 27 can adopt centrifugal pump or submersible pump, and its flow rate is (1-5) L/min, and its flow rate is bigger, and the flow speed of cooling liquid is faster, and the cooling effect is better.

Further, a heat exchanger 28 may also be provided on the cooling circuit, and a liquid channel communicating with the cooling pipeline 26 is provided in the heat exchanger 28 , and a plurality of cooling holes are provided on the heat exchanger 28 . When the cooling liquid flows through the liquid channel in the liquid cooling base 21, it absorbs the heat of the metal substrate 18; when the cooling liquid flows through the liquid channel in the cooling pipeline 26 and the heat exchanger 28, it exchanges heat with the external air, Transfer heat to outside air. The heat exchanger 28 can specifically adopt a water radiator commonly used in the prior art, and its heat dissipation area can be set according to the heat exchange required by the semiconductor couple pair 12 .

In order to strengthen the heat exchange, a cooling fan 29 for dissipating heat from the heat exchanger 28 can also be provided at the cooling hole of the heat exchanger 28, and the air outlet direction of the cooling fan 29 can be towards the heat exchanger 28 or away from the heat exchange. The device 28 is used to speed up the air flow around the heat exchanger 28 to increase the heat exchange speed between the cooling liquid and the surrounding air. The size of cooling fan 29 can be matched with the water discharge area of radiator, and the selection of its air volume and wind pressure parameters can be set according to the required heat exchange of semiconductor couple pair 12 and the heat dissipation of water discharge radiator.

Since the heat transfer Q between the metal substrate 18 and the cooling liquid satisfies Q=hAΔT, where h is the heat transfer coefficient, A is the heat transfer area, and ΔT is the temperature difference between the metal substrate 18 and the cooling liquid. Therefore, if you need to increase the heat transfer Q, you can start from two aspects, one is to increase the heat transfer coefficient h, and the other is to increase the heat transfer area A.

Therefore, on the basis of the above-mentioned technical solution, in order to increase the heat exchange area between the cooling liquid and the metal substrate 18, so as to increase the amount of heat exchange, this embodiment also improves the structure of the metal substrate 18, such as the following Method to realize:

First, FIG. 6 is a schematic structural view of the metal substrate in the semiconductor refrigeration assembly provided by the embodiment of the present invention, and FIG. 7 is a cross-sectional view of the B-B section in FIG. 6 . As shown in FIGS. 6 and 7 , on the surface of the metal substrate 18 facing the liquid cooling base 21 (the right side surface of the metal substrate 18 in FIG. 7 , that is, the hot end surface of the metal substrate 18 ), a pit 31 is provided, and the pit 31 is recessed. On the surface of the hot end of the metal substrate 18, it is equivalent to increasing the heat exchange area where the metal substrate 18 contacts the cooling liquid. The number of dimples 31 can be at least two, and the dimples 31 are arranged at positions corresponding to the liquid flow channel, so that the cooling liquid can enter the dimples 31 during the process of flowing in the liquid flow channel. Compared with the metal substrate 18 whose surface is flat, the surface contact increases the contact area between the cooling liquid and the metal substrate 18, which is equivalent to increasing the heat exchange area, which is beneficial to improve the heat exchange. Moreover, providing the pits 31 on the above-mentioned surface of the metal substrate 18 is equivalent to reducing the thickness of the metal substrate 18, reducing the thermal conduction resistance, and improving the heat exchange effect.

The number, size and shape of the pits 31 can be set according to the number, width and length of the liquid channels.

Fig. 8 is another structural schematic diagram of the metal substrate 18 in the semiconductor refrigeration assembly provided by the embodiment of the present invention, and Fig. 9 is a sectional view of the C-C section in Fig. 8 . As shown in FIG. 8 and FIG. 9 , alternatively, grooves 32 may be provided on the hot end surface of the metal substrate 18 facing the liquid cooling base 21 , and the length direction of the grooves 32 may extend along the direction of the liquid flow path. The groove 32 is recessed on the hot end surface of the metal substrate 18 , which is equivalent to increasing the heat exchange area of the metal substrate 18 in contact with the cooling liquid, and can also achieve a heat dissipation effect similar to that of the above-mentioned recess 31 .

Second, at least two metal sheets are arranged on the surface of the metal substrate 18 facing the liquid cooling base 21 , the at least two metal sheets are separated from each other, and the metal sheets are arranged at positions corresponding to the liquid flow channels. Then the cooling liquid can not only be in contact with the surface of the metal substrate 18, but also be in contact with the metal sheet. Due to the strong thermal conductivity of the metal sheet, the heat of the metal substrate 18 can be further and rapidly transferred to the cooling liquid through the metal sheet, thereby increasing the heat exchange speed. Specifically, the metal sheet can be made of metal with strong thermal conductivity, such as copper and aluminum. The metal sheet can be disposed on the hot end surface of the metal substrate 18 by means of welding or embedding.

Compared with the above-mentioned solution provided by this embodiment, although the contact area between the cooling liquid and the metal substrate 18 is reduced, because the heat conductivity of the metal sheet is very good, the speed at which the metal sheet absorbs heat from the metal substrate 18 is much faster than The speed at which the cooling liquid absorbs heat from the metal substrate 18, and then the cooling liquid absorbs heat from the metal sheet, is equivalent to increasing the above-mentioned heat transfer coefficient h, which also increases the heat transfer amount Q.

The quantity, size and shape of the metal sheets can be set according to the quantity, width and length of the liquid flow channels. The metal sheet can be bonded, welded or laid on the surface of the metal substrate 18 in contact with the cooling liquid by means of laying metal commonly used in the prior art.

Thirdly, FIG. 10 is another structural schematic diagram of the metal substrate 18 in the semiconductor refrigeration assembly provided by the embodiment of the present invention, and FIG. 11 is a sectional view of the D-D section in FIG. 10 . As shown in Figures 10 and 11, at least two metal ribs 33 protruding from the surface are provided on the hot end surface of the metal substrate 18 facing the liquid cooling base 21 (the shape of the metal ribs 33 can be referred to in the prior art. Fin shape), at least two metal ribs 33 are separated from each other, and the metal ribs 33 are arranged at positions corresponding to the liquid flow channels. Then the cooling liquid can not only contact the surface of the metal substrate 18, but also contact the metal ribs 33, and the part of the metal ribs 33 higher than the surface of the metal substrate 18 can extend into the liquid flow channel, increasing the contact area with the cooling liquid, It is equivalent to increasing the above-mentioned heat exchange area A, and also increasing the heat exchange coefficient h, which is beneficial to increase the heat exchange quantity Q.

Since the metal ribs 33 have a strong thermal conductivity, the heat of the metal substrate 18 can be further and rapidly transferred to the cooling liquid through the metal ribs 33, thereby increasing the heat exchange rate. The metal ribs 33 can specifically be made of metals with strong thermal conductivity, such as gold, copper, and aluminum.

Compared with the above-mentioned solution provided by this embodiment, although the contact area between the cooling liquid and the metal substrate 18 is reduced, the metal rib 33 absorbs heat from the metal substrate 18 faster because the metal rib 33 has a very good thermal conductivity. Much faster than the speed at which the cooling liquid absorbs heat from the metal substrate 18 , and then the cooling liquid absorbs heat from the metal ribs 33 , which is equivalent to increasing the speed at which the cooling liquid absorbs heat from the metal substrate 18 as a whole.

The quantity, size and shape of the metal ribs 33 can be set according to the quantity, width and length of the liquid flow channels. The metal ribs 33 can be bonded, welded or disposed on the surface of the metal substrate 18 that is in contact with the cooling liquid by means of connecting metals commonly used in the prior art.

In addition to the above three ways, those skilled in the art can also use other ways to improve the metal substrate 18 to improve heat exchange efficiency.

On the basis of the above technical solution, this embodiment also provides an implementation manner, which can further improve the heat exchange efficiency of the peltier cooling assembly.

The metal substrate 18 is set as an aluminum substrate, the area of the aluminum substrate is 80mm×90mm, and the thickness is 1.3mm to 1.7mm, preferably 1.5mm. The aluminum substrate and the liquid cooling base 21 can be connected by screwing. A thermally conductive insulating layer is laid on the surface of the cold end of the aluminum substrate facing the semiconductor couple pair 12. The thermally conductive insulating layer can be coated on the surface of the aluminum substrate by chemical and physical methods or a very thin layer of metal obtained by chemical treatment. Thermally conductive and insulating material. In addition, the thermally conductive insulating layer is bonded to the hot terminal electrode 15 by means such as chemical means. Therefore, the thermal resistance between the hot terminal electrode 15 and the thermally conductive insulating layer and the thermal resistance of the aluminum substrate itself are relatively small, which can improve the heat conduction efficiency.

Then the heat generated by the semiconductor couple 12 on the metal substrate 18 can be directly conducted to the aluminum substrate through the heat-conducting insulating layer with a small thermal resistance, and the good heat conduction and temperature uniformity of the aluminum substrate can be used to quickly conduct the heat to the aluminum substrate toward the liquid Cooling the hot end surface of the substrate 21 and being absorbed by the cooling liquid can double the heat diffusion efficiency, which is beneficial to realize high-power refrigeration.

Compared with the prior art, the implementation provided by this embodiment can be seen in Table 1 for the distribution of the thermal resistance of each part.

Table 1 The distribution of the thermal resistance between the semiconductor refrigeration assembly provided in this embodiment and the prior art

Wherein, R11=R21, R12=R22, R13=R23, R14=R24, R15=R25.

In this embodiment, an aluminum substrate is used as the metal substrate 18, and a thermally conductive insulating layer is provided between the metal substrate 18 and the semiconductor couple pair 12. The thermally conductive insulating layer is connected to the hot terminal electrode 15, and R26+R27 is much smaller than R16. And R28 is much smaller than R17+R18, therefore, in this embodiment, the sum of all the thermal resistances of the semiconductor thermocouple pair 12 is far smaller than the prior art. The reduction of thermal resistance is equivalent to the improvement of heat exchange efficiency, which is conducive to the realization of high-power refrigeration.

In the above solution provided by this embodiment, when the input power of the semiconductor couple 12 is 120W, the maximum cooling capacity can reach 60W-70W, which can realize high-power cooling. In addition, by increasing the logarithm and input power of the P-N point couple in the semiconductor couple pair 12, and matching the liquid cooling heat exchange part, the cooling power can be further increased.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present utility model, and are not intended to limit it; although the present utility model has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand : It can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements to some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions depart from the embodiments of the present utility model Scope of technical solutions.

Claims (10)

1. a semiconductor refrigerating assembly, it is characterised in that including: semi-conductor electricity couple and quasiconductor Cold end group plate, the hot junction substrate being connected with semi-conductor electricity couple hot junction and the liquid that cold end is connected by galvanic couple Body cooling device；Wherein, described hot junction substrate includes metal basal board and is connected to metal basal board and half Conductor galvanic couple between thermally conductive insulating layer；

Described liquid chiller part includes: the liquid cooling matrix being connected with metal basal board, described liquid is cold But offer on the installed surface that matrix is connected with metal basal board and put liquid bath, described in put between liquid bath and metal basal board It is provided with the cooling liquid of flowing.

Semiconductor refrigerating assembly the most according to claim 1, it is characterised in that described liquid cools down Matrix is provided with away from the diapire inner surface of metal basal board and supports between described diapire inner surface and metal basal board At least one dividing plate, at least one dividing plate is divided into snakelike flow channel for liquids, described cooling by putting liquid bath Liquid flows in described flow channel for liquids.

Semiconductor refrigerating assembly the most according to claim 2, it is characterised in that described metal basal board Being provided with pit towards the surface of described liquid cooling matrix, the quantity of described pit is at least two, extremely Few two pits are corresponding with the position of flow channel for liquids.

Semiconductor refrigerating assembly the most according to claim 3, it is characterised in that described liquid cools down A sidewall adjacent with described diapire on matrix is provided with inlet and liquid outlet, described inlet and go out liquid Mouth is corresponding with the position at the top of described flow channel for liquids and end respectively；Described inlet and liquid outlet also with Outside cooling line connection forms cooling circuit, and described cooling circuit is provided with liquid pump.

Semiconductor refrigerating assembly the most according to claim 4, it is characterised in that described cooling circuit On be additionally provided with heat exchanger, be provided with the fluid passage connected with described cooling line in described heat exchanger.

Semiconductor refrigerating assembly the most according to claim 5, it is characterised in that described liquid cools down Device also includes the cooling fan for dispelling the heat described heat exchanger.

7. according to the semiconductor refrigerating assembly described in any one of claim 1-6, it is characterised in that described Metal basal board is aluminium base.

Semiconductor refrigerating assembly the most according to claim 2, it is characterised in that described metal basal board It is provided with at least two sheet metal spaced apart from each other, described metal towards the surface of described liquid cooling matrix Sheet is corresponding with the position of flow channel for liquids, and each sheet metal is along the length direction of corresponding flow channel for liquids Extend.

Semiconductor refrigerating assembly the most according to claim 2, it is characterised in that described metal basal board It is provided with at least two protruded from this surface spaced apart from each other towards the surface of described liquid cooling matrix Metal rib, described metal rib is corresponding with the position of flow channel for liquids.

10. according to the semiconductor refrigerating assembly described in any one of claim 1-6, it is characterised in that institute State and be additionally provided with seal groove on the installed surface of liquid cooling matrix, be provided with sealing ring in described seal groove, be used for Seal the gap between described liquid cooling matrix and metal basal board.