CN110571143A - Manufacturing method of novel high-frequency semiconductor grid - Google Patents
Manufacturing method of novel high-frequency semiconductor grid Download PDFInfo
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- CN110571143A CN110571143A CN201910677856.5A CN201910677856A CN110571143A CN 110571143 A CN110571143 A CN 110571143A CN 201910677856 A CN201910677856 A CN 201910677856A CN 110571143 A CN110571143 A CN 110571143A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
Abstract
The invention discloses a manufacturing method of a novel high-frequency semiconductor grid, which comprises the following steps: selecting a barrier layer; forming a sandwich structure on the barrier layer, wherein the sandwich structure comprises from bottom to top: the first photoresist layer, the first metal layer, the second photoresist layer and the second metal layer; forming a first structure after photoetching the interlayer structure; developing the first structure to form a T-shaped groove structure with a T-shaped groove; depositing a gate metal layer on the surface of the T-shaped groove structure to form a second structure; and stripping the second structure to form a floating T-shaped gate. According to the invention, the formation of a mutual soluble layer between two photoresists is avoided through the first metal layer, so that the gate pin is separated from the gate head, the second metal layer is used as a barrier layer, the gate metal is easy to strip, and the first metal layer and the second metal layer release residual charges in electron beam lithography and do not influence an exposure pattern, so that the T-shaped gate with regular appearance is obtained, the parasitic capacitance can be better reduced, and the saturation current cut-off frequency f is improvedT。
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a manufacturing method of a novel high-frequency semiconductor grid.
background
With the development of microwave wireless technology, microwave devices are applied more and more widely in military and people's lives, so that the improvement of the performance of microwave devices becomes more and more important, wherein the high-frequency performance is one of the important performances of the performance of microwave devices.
Two important criteria for high frequency devices are the saturation current cut-off frequency fTAnd maximum gain cut-off frequency fmaxIncrease fTand fmaxThe grid structure of the grid mainly has T-shaped grid and Y-shaped grid, etc., the traditional manufacturing method of the T-shaped grid adopts coating two layers of photoresist or three layers of photoresist, the T-shaped grid structure is obtained by twice exposure and twice development, in addition, as the photoresist has fluidity, a mutual solution layer is inevitably formed between the two layers of photoresist, in the general electron beam lithography manufacturing method of the T-shaped grid, the lower layer of photoresist has low sensitivity and needs high-dose electron beam; the upper layer of photoresist is high in sensitivity, low-dose electron beam is adopted, and the mutual-soluble layer can cause the photoresist with the draft sensitivity and the photoresist with the low sensitivity to be mixed together, so that the upper layer and the lower layer can not be clearly distinguished in the exposure process, namely, a clear boundary line can not be formed between the grid pin and the grid head.
in the general manufacturing method of the T-shaped gate, the T-shaped gate structure is obtained by twice exposure and twice development, and a clear boundary line cannot be formed between the gate foot and the gate head, so that the T-shaped gate with regular appearance cannot be obtained, the parasitic capacitance of the gate can be increased, and the cutoff frequency f of the saturation current cannot be effectively improvedT。
Disclosure of Invention
in order to solve the above problems in the prior art, the present invention provides a method for manufacturing a novel high frequency semiconductor gate. The technical problem to be solved by the invention is realized by the following technical scheme:
the invention provides a manufacturing method of a novel high-frequency semiconductor grid, which comprises the following steps:
Selecting a barrier layer;
Forming a sandwich structure on the barrier layer, wherein the sandwich structure comprises from bottom to top: the first photoresist layer, the first metal layer, the second photoresist layer and the second metal layer;
Photoetching the interlayer structure to form a first structure;
developing the first structure to form a T-shaped groove structure with a T-shaped groove;
Depositing a gate metal layer on the surface of the T-shaped groove structure to form a second structure;
and stripping the second structure to form a floating T-shaped gate.
in one embodiment of the present invention, the sensitivity of the first photoresist layer is lower than the sensitivity of the second photoresist layer.
In one embodiment of the present invention, forming a sandwich structure on the barrier layer includes:
Coating a first photoresist layer on the surface of the barrier layer;
Depositing a first metal layer on the surface of the first photoresist layer;
Coating a second photoresist layer on the surface of the first metal layer;
And depositing a second metal layer on the surface of the second photoresist layer.
in one embodiment of the present invention, depositing a first metal layer on the surface of the first photoresist layer comprises:
And depositing a first metal layer on the surface of the first photoresist layer by using a magnetron sputtering or evaporation method.
In one embodiment of the present invention, depositing a second metal layer on the surface of the second photoresist layer comprises:
And depositing a second metal layer on the surface of the second photoresist layer by using a magnetron sputtering or evaporation method.
In one embodiment of the present invention, forming a first structure after photolithography the sandwich structure comprises:
Photoetching the interlayer structure by using an electron beam photoetching method, setting the photoetching dose of a middle gate foot of the floating T-shaped gate to be a first dose, photoetching the interlayer structure to the surface of the barrier layer by using the first dose, setting the photoetching doses of two side gate heads of the middle gate foot of the floating T-shaped gate to be a second dose, photoetching the interlayer structure to the surface of the first metal layer by using the second dose, and forming the first structure, wherein the concentration of the first dose is greater than that of the second dose.
in one embodiment of the present invention, developing the first structure to form a T-shaped groove structure having a T-shaped groove includes:
And developing the first structure by using a developing solution to form a T-shaped groove structure with a T-shaped groove.
In an embodiment of the present invention, forming the second structure after depositing the gate metal layer on the surface of the T-shaped groove structure includes:
and depositing a gate metal layer on the surface of the T-shaped groove structure by using an electron beam evaporation method to form a second structure, wherein the gate metal layer comprises a first gate metal layer part, a second gate metal layer part and a third gate metal layer part, the first gate metal layer part and the second gate metal layer part are respectively positioned on the surface of the second metal layer, and the third gate metal layer part is positioned in a T-shaped groove of the T-shaped groove structure.
In an embodiment of the present invention, the forming a floating T-shaped gate after the stripping the second structure includes:
And removing the first photoresist layer, the first metal layer, the second photoresist layer, the second metal layer, the first gate metal layer part and the second gate metal layer part by using a stripping process to form the floating T-shaped gate.
In an embodiment of the invention, a thickness of the gate metal layer is greater than a sum of a thickness of the first photoresist layer and a thickness of the first metal layer and is less than a thickness of the second photoresist layer.
the invention has the beneficial effects that:
In addition, the second metal layer in the sandwich structure is used as a barrier layer to form an undercut structure which is easy to strip the gate metal layer, and the first metal layer and the second metal layer can release residual charges in electron beam lithography to form an exposure patternThe shape is not influenced, so that the T-shaped grid with regular shape is obtained, the parasitic capacitance can be better reduced, and the saturation current cut-off frequency f is improvedT。
The present invention will be described in further detail with reference to the accompanying drawings and examples.
drawings
fig. 1 is a schematic flow chart of a method for manufacturing a novel high-frequency semiconductor gate according to an embodiment of the present invention;
Fig. 2a to 2h are schematic process flow diagrams of a method for manufacturing a novel high-frequency semiconductor gate according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
referring to fig. 1, fig. 1 is a schematic flow chart of a method for manufacturing a novel high-frequency semiconductor gate according to an embodiment of the present invention, where the method includes the following steps:
Step 1, selecting a barrier layer 1;
specifically, the barrier layer 1 is AlGaN, InAlN, or the like.
Step 2, forming a sandwich structure on the barrier layer 1;
Specifically, the sandwich structure sequentially comprises a first photoresist layer 2, a first metal layer 3, a second photoresist layer 4 and a second metal layer 5 from bottom to top.
Further, forming a sandwich structure on the barrier layer 1 includes:
Step 2.1, coating a first photoresist layer 2 on the surface of the barrier layer 1;
Referring to fig. 2a, fig. 2a to 2h are schematic diagrams illustrating a process for manufacturing a floating T-shaped gate according to an embodiment of the present invention.
Specifically, the first photoresist layer 2 is coated on the surface of the barrier layer 1, and the structure is baked at the baking temperature of 180-210 ℃ for 10 min.
the thickness of the first photoresist layer 2 is equal to the height of the gate leg of the floating T-shaped gate, and the thickness of the first photoresist layer 2 may be determined according to the required height of the gate leg of the floating T-shaped gate, for example: the height of the gate foot of the floating T-shaped gate to be prepared is 100nm, and the thickness of the first photoresist layer 2 is 100 nm.
Preferably, the first photoresist layer 2 is poly (methyl methacrylate) PMMA.
where the PMMA sensitivity is low, requiring high dose exposure, the specific dose setting is related to the e-beam lithography machine model and settings used, for example: the optimum PMMA dose was 7.5C/m using an NB 5E-beam lithography machine2。
2.2, depositing a first metal layer 3 on the surface of the first photoresist layer 2;
Specifically, referring to fig. 2b, a first metal layer 3 is deposited on the surface of the first photoresist layer 2.
further, a first metal layer 3 is deposited on the surface of the first photoresist layer 2 by using a magnetron sputtering (magnetron sputtering) or evaporation method.
The first metal layer 3 is made of Al, Ti, W, Au, Pt, etc., and the thickness range is 1-6 nm.
preferably, the first metal layer 3 is Al, and its thickness is 1.5 nm.
Step 2.3, coating a second photoresist layer 4 on the surface of the first metal layer 3;
Specifically, referring to fig. 2c, a second photoresist layer 4 is coated on the surface of the first metal layer 3.
Further, coating the second photoresist layer 4 on the surface of the first metal layer 3, and baking the structure, wherein the baking temperature is 180-210 ℃, and the baking time is 10 min.
The thickness of the second photoresist layer 4 is greater than the height of the gate head of the floating T-shaped gate.
Preferably, the second photoresist layer 4 uses PMMA-MAA (a copolymer of methyl methacrylate-methacrylic acid).
wherein the PMMA-MAA sensitivity is high, low dose exposure is required, in particularThe dose setting of (a) is related to the type and setting of the e-beam lithography machine used, for example: the optimum dosage of PMMA-MAA is 2.3C/m when NB5 electron beam lithography machine is adopted2。
the sensitivity of the first photoresist layer 2 is lower than that of the second photoresist layer 4, and because the sensitivity of the first photoresist layer 2 is low, the middle gate foot of the floating T-shaped gate is exposed by high dose, the sensitivity of the second photoresist layer 4 is high, and the gate heads on two sides of the middle gate foot of the floating T-shaped gate are exposed by low dose, a groove structure with a concave middle part can be formed.
furthermore, the first metal layer 3 can prevent the first photoresist layer 2 and the second photoresist layer 4 from forming an intersolubility layer, so that a gate pin layer with high dose can be clearly separated from a gate head layer with low dose, the T-shaped gate manufactured by the method has regular appearance, parasitic capacitance can be better reduced, and the cutoff frequency f of saturation current is improvedT。
and 2.4, depositing a second metal layer 5 on the surface of the second photoresist layer 4.
Specifically, referring to fig. 2d, a second metal layer 5 is deposited on the surface of the second photoresist layer 4.
Further, a second metal layer 5 is deposited on the surface of the second photoresist layer 4 by using a magnetron sputtering or evaporation method.
further, the second metal layer 5 is Al, Ti, W, Au, Pt, etc., wherein the thickness of the second metal layer 5 is greater than the thickness of the first metal layer 3 and less than 6 nm.
preferably, the second metal layer 5 is Al, and has a thickness of 3 nm.
Step 3, forming a first structure after photoetching the interlayer structure;
Referring to fig. 2e, specifically, the first structure is formed after the interlayer structure is lithographically formed.
Further, the interlayer structure is photoetched by an electron beam photoetching method, the photoetching dose of the middle gate foot of the floating T-shaped gate is set to be a first dose, the interlayer structure is photoetched to the surface of the barrier layer 1 by the first dose, the photoetching doses of the gate heads on two sides of the middle gate foot of the floating T-shaped gate are set to be a second dose, the interlayer structure is photoetched to the surface of the first metal layer 3 by the second dose, and the first structure is formed, wherein the concentration of the first dose is greater than that of the second dose.
Further, the first dose is a dose suitable for low sensitivity of the first photoresist layer 2, and the second dose is a dose suitable for high sensitivity of the second photoresist layer 4.
preferably, the first dose is 7.5C/m2And the second dose is 2.3C/m2。
Further, by using an electron beam lithography method, the lithography dose of the gate heads at the two sides of the middle gate foot of the floating T-shaped gate is set to be low dose, the lithography dose of the middle gate foot of the floating T-shaped gate is set to be high dose, and the first structure is formed after lithography.
The substantial difference between the first structure and fig. 2d is that the photoresist properties of the intermediate first photoresist layer 23 and the intermediate second photoresist layer 43 in fig. 2e are changed, and the metal films of the intermediate first metal layer 33 and the intermediate second metal layer 53 are changed.
specifically, in the electron beam lithography, after the intermediate first photoresist layer 23 and the intermediate second photoresist layer 43 are exposed to the electron beam emitted by the electron gun, the properties of the photoresists of the intermediate first photoresist layer 23 and the intermediate second photoresist layer 43 are changed, and the metal thin films of the intermediate first metal layer 33 and the intermediate second metal layer 53 are broken into discontinuous fragments by the electron beam.
Specifically, the barrier layer 1 and the substrate composed of the interlayer structure are placed into an electron beam lithography machine for lithography, the electron beam lithography is completed by adopting different doses for one-time exposure, the lithography dose of the gate head patterns on two sides of the middle gate pin of the floating T-shaped gate during exposure is set to be suitable for the low dose of the second photoresist layer 4, the lithography is stopped until the first metal layer 3 is formed, the lithography dose of the middle gate pin pattern of the floating T-shaped gate is set to be suitable for the high dose of the first photoresist layer 2, and the lithography is stopped until the barrier layer 1 is formed.
Specifically, because the photoetching doses of the gate head and the gate foot are different, when a photoetching layout is designed in the electron beam photoetching process, the graphs of the gate foot and the gate head are designed separately.
Further, the sandwich structure is subjected to electron beam lithography according to a designed lithographic layout to form a first structure, wherein the electron beam lithography enables the photoresist properties of the middle first photoresist layer 23 and the middle second photoresist layer 43 to be changed and then to be soluble in a developing solution, and the middle first metal layer 33 and the middle second metal layer 53 are broken into discontinuous fragments by electron beams and then to be soluble in the developing solution.
further, the first photoresist layer 2, the first metal layer 3, the second photoresist layer 4, and the second metal layer 5 are divided into three parts by a photolithography part in an electron beam lithography process, wherein the first photoresist layer 2 includes: a left first photoresist layer 21, a middle first photoresist layer 23, a right first photoresist layer 22, the second photoresist layer 4 comprising: a left second photoresist layer 41, a middle second photoresist layer 43, and a right second photoresist layer 42, wherein the first metal layer 3 includes: a left first metal layer 31, a middle first metal layer 33, and a right first metal layer 32, wherein the second metal layer 5 includes: left second metal layer 51, middle second metal layer 53, right second metal layer 52.
specifically, the left second photoresist layer 41 and the right second photoresist layer 42 form a slight diffusion to the periphery under the action of scattered electrons and backscattered electrons of the electron beam lithography, the left first metal layer 31 and the right first metal layer 32 are respectively used as an anti-etching layer of the left first photoresist layer 21 and the right first photoresist layer 22 to protect the left first photoresist layer 21 and the right first photoresist layer 22 from the influence of the electron beam, the photoresist properties of the middle first photoresist layer 23 and the middle second photoresist layer 43 are changed, and the electron beam also breaks the metal films of the middle first metal layer 33 and the middle second metal layer 53 into discontinuous fragments, so that the structure shown in fig. 2e is formed.
Step 4, developing the first structure to form a T-shaped groove structure with a T-shaped groove;
Specifically, referring to fig. 2f, after the first structure is developed by using a developer, a T-shaped groove structure having a T-shaped groove is formed.
Specifically, the first structure is placed in a developing solution for development to form a T-shaped groove structure with a T-shaped groove.
Preferably, the developing solution is a solution of MIBK (methyl isobutyl (methyl) ketone, methyl isobutyl ketone, 4-methyl-2-pentanone) in a ratio of 1:3 to isopropanol, wherein the developing rate is generally 3 nm/s.
specifically, the developing time can be calculated according to the thickness of the photoresist and the developing rate, for example: the photoresist thickness was 30nm, the development rate was 3nm/s, and the development time was 10 s.
Further, since the electron beam of the electron beam lithography machine can break the dense metal thin film into discontinuous fragments, that is, the metal thin films of the middle first metal layer 33 and the middle second metal layer 53 can be broken into discontinuous fragments by the electron beam of the electron beam lithography machine, and the fragments can be mixed in the developing solution along with the photoresist during developing, the whole manufacturing process adopts a one-time exposure and one-time developing method, which can greatly reduce the process complexity.
furthermore, the first metal layer 3 and the second metal layer 5 can release charges remaining after an electron beam emitted by an electron gun acts on a photoresist in electron beam lithography, so that an exposed pattern is not affected.
step 5, depositing a gate metal layer 6 on the surface of the T-shaped groove structure to form a second structure;
Specifically, referring to fig. 2g, after depositing a gate metal layer 6 on the surface of the T-shaped groove structure by using an electron beam evaporation method, a second structure is formed, where the gate metal layer 6 includes a first gate metal layer portion 61, a second gate metal layer portion 62, and a third gate metal layer portion 63, the first gate metal layer portion 61 and the second gate metal layer portion 62 are respectively located on the surface of the second metal layer 5, and the third gate metal layer portion 63 is located in the T-shaped groove of the T-shaped groove structure.
further, when depositing the gate metal layer 6, the first gate metal layer portion 61 and the second gate metal layer portion 62 are respectively deposited on the surfaces of the left second metal layer 51 and the right second metal layer 52, and since the T-shaped groove portion of the T-shaped groove structure has a recess, the third gate metal layer portion 63 is deposited in the T-shaped groove of the T-shaped groove structure due to the T-shaped groove of the T-shaped groove structure sinking, so as to form the second structure.
further, when the gate metal layer 6 is deposited, the left second metal layer 51 and the right second metal layer 52 respectively form a barrier layer for the left second photoresist layer 41 and the right second photoresist layer 42, which is an undercut structure, and the undercut structure is favorable for stripping the gate metal layer 6, so that a T-shaped gate with a regular shape is obtained.
The thickness of the gate metal layer 6 is greater than the sum of the thickness of the first photoresist layer 2 and the thickness of the first metal layer 3, and is less than the thickness of the second photoresist layer 4.
Further, if the thickness of the gate metal layer 6 is less than the sum of the thickness of the first photoresist layer 2 and the thickness of the first metal layer 3, a floating T-shaped gate cannot be formed.
In addition, the thickness of the gate metal layer 6 is smaller than that of the second photoresist layer 4, which is beneficial to the successful stripping of the gate metal layer 6.
Step 6, forming a floating T-shaped gate after stripping the second structure;
Specifically, referring to fig. 2h, the second structure is stripped to form a floating T-shaped gate.
Further, the first photoresist layer 2, the first metal layer 3, the second photoresist layer 4, the second metal layer 5, the first gate metal layer part 61, and the second gate metal layer part 62 are removed by a lift-off process to form the floating T-shaped gate.
Further, the third gate metal layer portion 63 is the floating T-shaped gate.
Specifically, the stripping process: soaking the second structure in an acetone solution for 24 hours without using ultrasound; fishing out after soaking, putting into a photoetching stripping solution with the temperature of 60 ℃ for water bath, heating for 10min, fishing out, and soaking in an isopropanol solution for 30min without using ultrasound; finally, the structure is rinsed with ultrapure water for 2min, and then dried with nitrogen.
Furthermore, ultrasound is not used in the steps, so that the gate metal layer 6 can be prevented from falling off, and the yield can be improved.
the invention has the beneficial effects that:
In addition, the second metal layer in the sandwich structure is used as a barrier layer to form an undercut structure which is easy to strip the gate metal layer, and the first metal layer and the second metal layer can release residual charges in electron beam lithography and do not influence an exposed pattern, so that the T-shaped gate with regular appearance is obtained, parasitic capacitance can be better reduced, and the cutoff frequency f of saturation current is improvedT。
the foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A method for manufacturing a novel high-frequency semiconductor grid electrode is characterized by comprising the following steps:
Selecting a barrier layer (1);
Forming a sandwich structure on the barrier layer (1), wherein the sandwich structure comprises in sequence from bottom to top: the metal-clad plate comprises a first photoresist layer (2), a first metal layer (3), a second photoresist layer (4) and a second metal layer (5);
photoetching the interlayer structure to form a first structure;
Developing the first structure to form a T-shaped groove structure with a T-shaped groove;
depositing a gate metal layer (6) on the surface of the T-shaped groove structure to form a second structure;
And stripping the second structure to form a floating T-shaped gate.
2. method according to claim 1, characterized in that the sensitivity of the first photoresist layer (2) is lower than the sensitivity of the second photoresist layer (4).
3. Method according to claim 1, wherein forming a sandwich structure on the barrier layer (1) comprises:
Coating a first photoresist layer (2) on the surface of the barrier layer (1);
Depositing a first metal layer (3) on the surface of the first photoresist layer (2);
Coating a second photoresist layer (4) on the surface of the first metal layer (3);
and depositing a second metal layer (5) on the surface of the second photoresist layer (4).
4. A method according to claim 3, wherein depositing a first metal layer (3) on the surface of the first photoresist layer (2) comprises:
And depositing a first metal layer (3) on the surface of the first photoresist layer (2) by using a magnetron sputtering or evaporation method.
5. a method according to claim 3, wherein depositing a second metal layer (5) on the surface of the second photoresist layer (4) comprises:
and depositing a second metal layer (5) on the surface of the second photoresist layer (4) by using a magnetron sputtering or evaporation method.
6. The method of claim 1, wherein forming the first structure after photolithography of the sandwich structure comprises:
photoetching the interlayer structure by using an electron beam photoetching method, setting the photoetching dose of a middle gate foot of the floating T-shaped gate as a first dose, photoetching the interlayer structure to the surface of the barrier layer (1) by using the first dose, setting the photoetching doses of two side gate heads of the middle gate foot of the floating T-shaped gate as a second dose, photoetching the interlayer structure to the surface of the first metal layer (3) by using the second dose, and forming the first structure, wherein the concentration of the first dose is greater than that of the second dose.
7. The method of claim 1, wherein developing the first structure to form a T-groove structure having T-grooves comprises:
and developing the first structure by using a developing solution to form a T-shaped groove structure with a T-shaped groove.
8. the method of claim 1, wherein forming a second structure after depositing a gate metal layer (6) on the surface of the T-shaped recess structure comprises:
And depositing a gate metal layer (6) on the surface of the T-shaped groove structure by using an electron beam evaporation method to form a second structure, wherein the gate metal layer (6) comprises a first gate metal layer part (61), a second gate metal layer part (62) and a third gate metal layer part (63), the first gate metal layer part (61) and the second gate metal layer part (62) are respectively positioned on the surface of the second metal layer (5), and the third gate metal layer part (63) is positioned in the T-shaped groove of the T-shaped groove structure.
9. The method of claim 8, wherein forming a floating T-gate after stripping the second structure comprises:
And removing the first photoresist layer (2), the first metal layer (3), the second photoresist layer (4), the second metal layer (5), the first gate metal layer part (61) and the second gate metal layer part (62) by using a stripping process to form the floating T-shaped gate.
10. The method of claim 1,
The thickness of the gate metal layer (6) is larger than the sum of the thickness of the first photoresist layer (2) and the thickness of the first metal layer (3), and is smaller than the thickness of the second photoresist layer (4).
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| CN112713185A (en) * | 2020-12-21 | 2021-04-27 | 西安电子科技大学 | T-shaped gate with supporting structure, preparation method thereof and semiconductor power device |
| CN112713084A (en) * | 2020-12-29 | 2021-04-27 | 中国科学院微电子研究所 | Method for manufacturing semiconductor structure |
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