CN107910371A - A kind of method of improvement GaN HEMT surface electronic beam direct write charge accumulateds - Google Patents
A kind of method of improvement GaN HEMT surface electronic beam direct write charge accumulateds Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 230000006872 improvement Effects 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 102
- 229910052751 metal Inorganic materials 0.000 claims abstract description 102
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 50
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 50
- 238000010894 electron beam technology Methods 0.000 claims abstract description 42
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- 238000005260 corrosion Methods 0.000 claims description 16
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- 239000000463 material Substances 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
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- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000005036 potential barrier Methods 0.000 claims description 4
- 238000004381 surface treatment Methods 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 3
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- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000005728 strengthening Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- 239000003292 glue Substances 0.000 description 10
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- 238000002161 passivation Methods 0.000 description 5
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
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- 229910002704 AlGaN Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Abstract
The present invention is a kind of method of improvement GaN HEMT surface electronic beam direct write charge accumulateds, its feature this method comprises the technical steps that：（1）The preparation of element；（2）The preparation of nano thin-layer germanium metal；（3）Electron-beam direct writing grid；（4）The first time of nano thin-layer germanium metal removes；（5）The etching of gate medium, the evaporation and stripping of grid metal；（6）Second of removal of nano thin-layer germanium metal.Advantages of the present invention：1st, using germanium metal as bottom conductive layer, uniformity is good, and thickness controllable precise；On its surface, the electron beam adhesive of coating has good adhesiveness, and is easily removed.2nd, germanium metal can have extraordinary conductive characteristic in below 10nm, to improving GaN HEMT surface electronic beam charge accumulated excellent effects.
Description
Technical field
The present invention relates to a kind of method of improvement GaN HEMT surface electronic beam direct write charge accumulateds, belong to semiconductor
Device and field of IC technique.
Background technology
In modem semi-conductor devices manufacturing process, with advances in technology, device size is less and less, and integrated level is more next
It is higher.Three generations's semiconductor GaN has broad application prospects in the high frequency field of microwave and millimeter wave chip.Millimeter wave GaN
HEMT device has operating voltage height, and output power is up to more than watt level, and power density is high and working frequency can reach
The advantages such as 100GHz.GaN HEMT devices, especially AlGaN/GaN HEMT structure, the poorly conductive on its surface.It is moreover, general
It is required for growing one layer of fine and close SiN medium on surface before grid are made to protect source and drain metal while reduce surface as far as possible
Defect.When preparing the grid less GaN HEMT devices of length, often using electron-beam direct writing technique.And since the densification on surface is situated between
The problem of matter and GaN HEMT poorly conductive in itself, electron-beam direct writing can there are charge build-up problems, charge build-up problems meeting
Cause direct write alignment deviation even due to can not find mark and can not direct write situation.
In general, it is one layer of conducting resinl of coating to solve the charge build-up problems in direct electron beam process.But conducting resinl
Often bring the variation of technique, the drying glue temperature of such as each layer electron beam adhesive, exposure dose, developing time, and some techniques
Variation can be such that expected direct write effect does not complete.In addition, prepared by the grid of GaN HEMT generally use electron beam one-pass molding, i.e.,
Need multilayer electronic beam glue.Need to ensure adhesiveness between multilayer glue, tend not to coating conducting resinl.Meanwhile the baking of conducting resinl
Roasting temperature is not necessarily matched with electron beam adhesive, so using above there is certain limitation.In addition, in heavy dose of direct write, it is conductive
It is also restrained that the conductive capability deficiency of glue makes it solve the ability of charge accumulated.
And one layer of metal material is prepared on GaN surfaces, conductivity problems can be improved.The metal material of preparation not only will be to electricity
The adhesiveness that beamlet glue has had, while there is easy removal, the normal process of electron beam is not influenced.A kind of method is to be coated with
One layer of metal, such as metallic aluminium are prepared on the sample of electron beam adhesive again.But this kind of method large variation of technique with belt transect, including
When needing to consider the place to go of metallic aluminium in development, and applying multilayer glue, the problems such as the adhesion of upper strata glue and metallic aluminium, chemical reaction.
In addition, metallic aluminium is generally required using acids place to go, and acid solution can equally have other metals of device, such as source and drain metal
Corrosiveness.Germanium metal is widely used in the semiconductor device, such as one of ohmic metal as GaAs materials.Germanium metal one
As using electron beam evaporation process prepare, surfacing, uniformity is good, and thickness controllable precise.In the electricity of its surface coating
Beamlet glue has good adhesiveness.After direct write and after grid metal stripping, and it is easier to remove, is relatively good improvement
The material of electron-beam direct writing charge accumulated.And germanium metal is prepared before electron beam adhesive gluing, will not bring technique variation and
Compatibility issue.
In conclusion when preparing GaN HEMT devices using electron-beam direct writing technique, due to the poorly conductive meeting on its surface
There are problems that charge accumulated and bring direct write.Coating conducting resinl method direct-write process can be brought to change, and application method by
Limit, conductive capability do not have the metal material good.So the present invention develops electric charge in a kind of improvement GaN HEMT electron-beam direct writings and accumulates
The method of tired problem.Direct write alignment can be effectively solved, the problems such as adhesiveness.
The content of the invention
The present invention proposes a kind of method of solution GaN HEMT surface electronic beam charge accumulateds, its purpose aims to solve the problem that electricity
The problems such as charge build-up problems during beamlet direct write, while can effectively solve direct write alignment, adhesiveness.
The technical solution of the present invention：Improve the method for GaN HEMT surface electronic beam direct write charge accumulateds, its feature
It is when preparing GaN HEMT devices, one layer of nano thin-layer germanium metal is prepared on GaN HEMT surfaces as conductive layer.
Its method, comprises the technical steps that：
（1）The preparation of element；
（2）The preparation of nano thin-layer germanium metal；
（3）Electron-beam direct writing grid；
（4）The first time of nano thin-layer germanium metal removes；
（5）The etching of gate medium, the evaporation and stripping of grid metal；
（6）Second of removal of nano thin-layer germanium metal.
Advantages of the present invention：
1st, using germanium metal as bottom conductive layer, the germanium metal surfacing prepared using electron beam evaporation process, uniformity
It is good, and thickness controllable precise；On its surface, the electron beam adhesive of coating has a good adhesiveness, and after direct write and grid metal is shelled
From rear, and it is easier to remove；
2nd, the conductive substrate germanium metal used can have an extraordinary conductive characteristic in below 10nm, and with follow-up electronics
Beam technique does not have process compatible problem, it improves the positive effect of GaN HEMT surface electronic beam charge accumulateds and is better than conducting resinl.
Brief description of the drawings
Attached drawing 1 is that Ohmic contact and growth protecting dielectric structure schematic diagram are prepared in GaN epitaxial layer.
Attached drawing 2 is growth nano thin-layer germanium metal schematic cross-section.
Attached drawing 3 is to apply electron beam adhesive and direct write development schematic cross-section.
Attached drawing 4 is the nano thin-layer germanium metal schematic diagram that the first step removes grid underfooting portion.
Attached drawing 5 is schematic diagram after grid metal is evaporated and peeled off.
Attached drawing 6 is that second step removes schematic diagram after nano thin-layer germanium metal and growth grid dielectric passivation.
101 be SiC substrate in attached drawing, and 102 be epi channels and barrier layer, and 103 be source-drain electrode, and 104 be source and drain protection
SiN media, 201 be germanium metal, and 302 be to apply electron beam adhesive, and 502 be grid metal, and 602 be grid metal dielectric passivation.
Embodiment
A kind of method of improvement GaN HEMT surface electronic beam direct write charge accumulateds, when preparing GaN HEMT devices,
GaN HEMT surfaces prepare one layer of nano thin-layer germanium metal as conductive layer.
The GaN HEMT devices, including GaN epitaxy material, source-drain structure, source and drain protection medium, grid metal, grid are blunt
Change medium, capacitance upper/lower electrode metal.
Improve the method for GaN HEMT surface electronic beam direct write charge accumulateds, comprise the technical steps that：
（1）The preparation of element：On GaN HEMT epitaxial materials, using being lithographically derived source and drain figure；Pass through electron beam evaporation, stripping
From and the technique such as alloy prepare source and drain metal system；Using enhancing plasma chemical vapor deposition method or coupling inductance chemical gaseous phase
Sedimentation prepares one layer of protection medium SiN, and the SiN thickness is 40nm ~ 200nm；Pass through ultraviolet photolithographic, evaporation and sputtering technology
It is sequentially prepared resistance metal and capacitor lower electrode metal；
（2）The preparation of nano thin-layer germanium metal：Nano thin-layer germanium metal is prepared using electron beam evaporation process or sputtering technology, thick
Spend for 0 ~ 10nm；
（3）Electron-beam direct writing grid：Prepare grid and use electron-beam direct writing technique, prepared grid are T-shaped grid or Y type grid, grid metal
Applied in electron-beam direct writing technique no less than 2 layers of electron beam adhesive, using no less than 2 times direct writes；
（4）The first time of nano thin-layer germanium metal removes：Removed using hydrogen peroxide erosion removal or fluorine-containing plasma, remove part
Part after developing for grid foot；Oxygen plasma gluing is carried out before corrosion to improve surface wettability.Etching time is 20 ~ 60s；
（5）The etching of gate medium, the evaporation and stripping of grid metal：First to GaN HEMT epitaxial materials carry out grid medium etching,
The grooving of potential barrier layer surface, process of surface treatment；Then deposited by electron beam evaporation prepares grid metal；Grid metal is soaked after preparing using acetone
Steep to the surface metal of electron beam adhesive and come off naturally；Be respectively adopted afterwards nmp solution, acetone soln, alcoholic solution immersion 5 ~
10min；Finally take out drying；
（6）Second of removal of nano thin-layer germanium metal：Using hydrogen peroxide erosion removal, it is except complete under grid metal to remove part
Piece other parts；Etching time is 1 ~ 60s.
Technical scheme is further described below in conjunction with the accompanying drawings.
Attached drawing 1 is contrasted, source and drain metal is prepared on the GaN HEMT epitaxial materials of SiC substrate and grows compact medium, is made
Standby resistive layer and capacitor lower electrode layer.
Attached drawing 2 is contrasted, it is one layer thin that germanium metal 201 is used as conductive layer using electron beam evaporation process evaporation on surface, should
The thickness of layer germanium metal is less than or equal to 10nm.
Attached drawing 3 is contrasted, applies electron beam adhesive 302, and carries out electron-beam direct writing, the figure needed after development.
Attached drawing 4 is contrasted, hydrogen peroxide solution processing is carried out or using fluoro plasma to the figure for obtaining electron-beam direct writing
Processing, is removed the germanium metal that grid bottom-exposed comes out.
Attached drawing 5 is contrasted, the gate medium on print surface is performed etching to remove the SiN media of grid foot part, is then used
Electron beam evaporation process prepares grid metal 502, is peeled off after grid metal evaporation.
Attached drawing 6 is contrasted, full sheet surface is corroded using hydrogen peroxide, since hydrogen peroxide cannot corrode grid metal and SiN
Medium, so removing the process of germanium metal will not cause to damage to surfaces of active regions and source and drain metal；Sample table to removing germanium
Look unfamiliar long grid metal dielectric passivation 602, then by dielectric openings, prepared by capacitance top electrode etc., completes the system of GaN HEMT devices
It is standby.
Embodiment 1
Improve the method for GaN HEMT surface electronic beam direct write charge accumulateds, include the following steps：
1）, on the HEMT epitaxial materials of GaN substrate, using being lithographically derived source and drain figure, then by electron beam evaporation, peel off and
The techniques such as alloy prepare source and drain metal system, and enhancing plasma chemical gas can be used by then growing one layer of protection medium SiN, SiN
Mutually prepared by deposit, thickness 40nm.It is sequentially prepared again by techniques such as ultraviolet photolithographic, evaporation or sputterings under resistance metal and capacitance
Electrode metal；
2）The germanium metal of one layer of 5nm thickness is prepared using electron beam evaporation process.Electron beam adhesive is applied again, is toasted, direct write, wherein preparing
, it is necessary to apply multilayer glue, simultaneously direct write is multiple using the one-time formed method of electron beam for the small grid length of GaN, and bottom nano thin-layer germanium metal
The effect for eliminating charge accumulated is respectively provided with to multiple direct write；
3）Sample after development carries out erosion removal using hydrogen peroxide to the metal of grid foot bottom.It is thorough to guarantee corrosion,
Oxygen plasma gluing is carried out before corrosion to improve surface wettability；Corrosion 20 seconds, ensures that bottom corrosion is clean and has certain
Sideetching, the purpose of sideetching is to ensure that follow-up grid metal will not be connected with germanium metal；
4）The techniques such as grid medium etching, the grooving of potential barrier layer surface, surface treatment are carried out to the sample after corrosion, use electron beam afterwards
Evaporation prepares grid metal；Grid metal uses acetone soak to make to have the surface metal of electron beam adhesive to come off naturally after preparing, afterwards
Nmp solution, acetone soln, alcoholic solution immersion 5min is respectively adopted, finally takes out drying；Remove grid bottom in print surface after drying
Outside portion, nano thin-layer germanium metal is also covered elsewhere；
5）Erosion removal is carried out to germanium metal using the mixed solution of hydrogen peroxide or hydrogen peroxide and water.According to the corruption of hydrogen peroxide solution
Erosion speed determines the complete corrosion of germanium, corrodes 30s；Since hydrogen peroxide is to GaN surfaces, grid metal and SiN media are without corruption
Erosion acts on, so surface damage and process compatible sex chromosome mosaicism can't be brought；
6）Dielectric passivation is carried out to the grid structure after corrosion germanium metal.Pass through dielectric openings, the preparation of capacitance top electrode etc. again, complete
The preparation of GaN HEMT devices.
Embodiment 2
1）On the HEMT epitaxial materials of GaN substrate, using being lithographically derived source and drain figure, then by electron beam evaporation, peel off and
The techniques such as alloy prepare source and drain metal system, and coupling inductance chemical gaseous phase can be used by then growing one layer of protection medium SiN, SiN
Prepared by deposition process, thickness 200nm.Resistance metal and electricity are sequentially prepared by techniques such as ultraviolet photolithographic, evaporation or sputterings again
Hold electrode metal；
2）The germanium metal of one layer of 10nm thickness is prepared using electron beam transpiration technique.Electron beam adhesive is applied again, is toasted, direct write, wherein making
The standby small grid length of GaN generally uses the one-time formed method of electron beam, and, it is necessary to apply multilayer glue, simultaneously direct write is multiple, and bottom nano thin-layer
Germanium metal is respectively provided with multiple direct write in the work for eliminating charge accumulated；
3）Sample after development carries out erosion removal using hydrogen peroxide to the metal of grid foot bottom.It is thorough to guarantee corrosion,
Oxygen plasma gluing is carried out before corrosion to improve surface wettability；Corrosion 1 minute, ensures that bottom corrosion is clean and has certain
Sideetching, the purpose of sideetching is to ensure that follow-up grid metal will not be connected with germanium metal；
4）The techniques such as grid medium etching, the grooving of potential barrier layer surface, surface treatment are carried out to the sample after corrosion, use electron beam afterwards
Evaporation prepares grid metal；Grid metal uses acetone soak to make to have the surface metal of electron beam adhesive to come off naturally after preparing, afterwards
Nmp solution, acetone soln, alcoholic solution immersion 10min is respectively adopted, finally takes out drying；Remove grid in print surface after drying
Outside bottom, nano thin-layer germanium metal is also covered elsewhere；
5）Erosion removal is carried out to germanium metal using the mixed solution of hydrogen peroxide or hydrogen peroxide and water.According to the corruption of hydrogen peroxide solution
Erosion speed determines the complete corrosion of germanium, corrodes 1 minute；Since hydrogen peroxide does not have GaN surfaces, grid metal and SiN media
Corrosiveness, so surface damage and process compatible sex chromosome mosaicism can't be brought；
6）Dielectric passivation is carried out to the grid structure after corrosion germanium metal；Pass through dielectric openings, the preparation of capacitance top electrode etc. again, complete
The preparation of GaN HEMT devices.
Claims (7)
1. a kind of method of improvement GaN HEMT surface electronic beam direct write charge accumulateds, its feature this method is walked including following technique
Suddenly：
（1）The preparation of element；
（2）The preparation of nano thin-layer germanium metal；
（3）Electron-beam direct writing grid；
（4）The first time of nano thin-layer germanium metal removes；
（5）The etching of gate medium, the evaporation and stripping of grid metal；
（6）Second of removal of nano thin-layer germanium metal.
2. a kind of method of improvement GaN HEMT surface electronic beam direct write charge accumulateds according to claim 1, its feature
It is the step（1）The preparation of element：On GaN HEMT epitaxial materials, by being lithographically derived source and drain figure；Pass through electron beam
The techniques such as evaporation, stripping and alloy prepare source and drain metal system；By strengthening plasma chemical vapor deposition method or coupling inductance
CVD method prepares one layer of protection medium SiN, and the SiN thickness is 40nm ~ 200nm；By ultraviolet photolithographic, evaporation and
Sputtering technology is sequentially prepared resistance metal and capacitor lower electrode metal.
3. a kind of method of improvement GaN HEMT surface electronic beam direct write charge accumulateds according to claim 1, its feature
It is the step（2）The preparation of nano thin-layer germanium metal：Nano thin-layer germanium metal uses electron beam evaporation process or sputtering technology
Prepare, thickness is 0 ~ 10nm.
4. a kind of method of improvement GaN HEMT surface electronic beam direct write charge accumulateds according to claim 1, its feature
It is the step（3）Electron-beam direct writing grid：Preparing grid and use electron-beam direct writing technique, prepared grid are T-shaped grid or Y type grid,
Grid metal is applied in electron-beam direct writing technique no less than 2 layers of electron beam adhesive, using no less than 2 times direct writes.
5. a kind of method of improvement GaN HEMT surface electronic beam direct write charge accumulateds according to claim 1, its feature
It is the step（4）The first time of nano thin-layer germanium metal removes：Removed using hydrogen peroxide erosion removal or fluorine-containing plasma,
Part is removed as the part after the development of grid foot；Oxygen plasma gluing is carried out before corrosion to improve surface wettability；Etching time
For 20 ~ 60s.
6. a kind of method of improvement GaN HEMT surface electronic beam direct write charge accumulateds according to claim 1, its feature
It is the step（5）The etching of gate medium, the evaporation and stripping of grid metal：Grid Jie is carried out to GaN HEMT epitaxial materials first
Matter etching, the grooving of potential barrier layer surface, process of surface treatment；Then deposited by electron beam evaporation prepares grid metal；Grid metal is adopted after preparing
Come off naturally with the surface metal of acetone soak to electron beam adhesive；Nmp solution, acetone soln, alcoholic solution are respectively adopted afterwards
Soak 5 ~ 10min；Finally take out drying.
7. a kind of method of improvement GaN HEMT surface electronic beam direct write charge accumulateds according to claim 1, its feature
It is the step（6）Second of removal of nano thin-layer germanium metal：Using hydrogen peroxide erosion removal, it is except grid gold to remove part
The other parts of subordinate；Etching time is 1 ~ 60s.
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