CN110546228A - 粘合剂粘结组合物以及由其制备的电子部件 - Google Patents

粘合剂粘结组合物以及由其制备的电子部件 Download PDF

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Publication number
CN110546228A
CN110546228A CN201880025220.6A CN201880025220A CN110546228A CN 110546228 A CN110546228 A CN 110546228A CN 201880025220 A CN201880025220 A CN 201880025220A CN 110546228 A CN110546228 A CN 110546228A
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China
Prior art keywords
particles
adhesive
resin
wavelength
light
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CN201880025220.6A
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CN110546228B (zh
Inventor
扎卡亚埃·法蒂
詹姆斯·克莱顿
哈罗德·瓦尔德
弗雷德里克·A·博尔克
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MMUNOLIGHT LLC
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MMUNOLIGHT LLC
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/22Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
    • B32B5/24Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
    • B32B5/26Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer another layer next to it also being fibrous or filamentary
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F10/00Additive manufacturing of workpieces or articles from metallic powder
    • B22F10/10Formation of a green body
    • B22F10/12Formation of a green body by photopolymerisation, e.g. stereolithography [SLA] or digital light processing [DLP]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F5/04Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of turbine blades
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/34Laser welding for purposes other than joining
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/06Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of natural rubber or synthetic rubber
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B25/00Layered products comprising a layer of natural or synthetic rubber
    • B32B25/04Layered products comprising a layer of natural or synthetic rubber comprising rubber as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B25/042Layered products comprising a layer of natural or synthetic rubber comprising rubber as the main or only constituent of a layer, which is next to another layer of the same or of a different material of natural rubber or synthetic rubber
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B25/00Layered products comprising a layer of natural or synthetic rubber
    • B32B25/04Layered products comprising a layer of natural or synthetic rubber comprising rubber as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B25/045Layered products comprising a layer of natural or synthetic rubber comprising rubber as the main or only constituent of a layer, which is next to another layer of the same or of a different material of foam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B25/00Layered products comprising a layer of natural or synthetic rubber
    • B32B25/10Layered products comprising a layer of natural or synthetic rubber next to a fibrous or filamentary layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/02Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/02Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
    • B32B5/12Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer characterised by the relative arrangement of fibres or filaments of different layers, e.g. the fibres or filaments being parallel or perpendicular to each other
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/18Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by features of a layer of foamed material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/22Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
    • B32B5/24Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
    • B32B5/245Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer another layer next to it being a foam layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/005Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/02Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising animal or vegetable substances, e.g. cork, bamboo, starch
    • B32B9/025Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising animal or vegetable substances, e.g. cork, bamboo, starch comprising leather
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B9/041Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B9/043Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of natural rubber or synthetic rubber
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B33ADDITIVE MANUFACTURING TECHNOLOGY
    • B33YADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y10/00Processes of additive manufacturing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B33ADDITIVE MANUFACTURING TECHNOLOGY
    • B33YADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y30/00Apparatus for additive manufacturing; Details thereof or accessories therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B33ADDITIVE MANUFACTURING TECHNOLOGY
    • B33YADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y50/00Data acquisition or data processing for additive manufacturing
    • B33Y50/02Data acquisition or data processing for additive manufacturing for controlling or regulating additive manufacturing processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B33ADDITIVE MANUFACTURING TECHNOLOGY
    • B33YADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y80/00Products made by additive manufacturing
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • C09D11/02Printing inks
    • C09D11/10Printing inks based on artificial resins
    • C09D11/101Inks specially adapted for printing processes involving curing by wave energy or particle radiation, e.g. with UV-curing following the printing
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24Electrically-conducting paints
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • C09D7/60Additives non-macromolecular
    • C09D7/61Additives non-macromolecular inorganic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0047Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/295Organic, e.g. plastic containing a filler
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F12/00Apparatus or devices specially adapted for additive manufacturing; Auxiliary means for additive manufacturing; Combinations of additive manufacturing apparatus or devices with other processing apparatus or devices
    • B22F12/22Driving means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F12/00Apparatus or devices specially adapted for additive manufacturing; Auxiliary means for additive manufacturing; Combinations of additive manufacturing apparatus or devices with other processing apparatus or devices
    • B22F12/40Radiation means
    • B22F12/44Radiation means characterised by the configuration of the radiation means
    • B22F12/45Two or more
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
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    • B22F7/062Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F2007/068Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts repairing articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2260/00Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
    • B32B2260/02Composition of the impregnated, bonded or embedded layer
    • B32B2260/021Fibrous or filamentary layer
    • B32B2260/023Two or more layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2260/00Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
    • B32B2260/04Impregnation, embedding, or binder material
    • B32B2260/046Synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
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    • G02B6/4239Adhesive bonding; Encapsulation with polymer material
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Abstract

可固化树脂或粘合剂组合物包含至少一种单体、在暴露于光时能够引发所述单体聚合的光引发剂、以及至少一种在暴露于辐射(通常为X射线)时能够产生光的能量转换材料,优选磷光体。所述材料特别适用于在外部光源无法接近粘结点的情况下在环境温度下粘结部件。一种相关的方法包括:将包含光引发剂和能量转换材料诸如下转换磷光体的可聚合粘合剂组合物放置成与至少两个待粘结的部件接触以形成组件;以及用第一波长的辐射照射所述组件,所述第一波长能够转换(由所述磷光体向下转换)成能够活化所述光引发剂的第二波长,以制备诸如喷墨墨盒、晶片到晶片组件、半导体、集成电路等的物品。

Description

粘合剂粘结组合物以及由其制备的电子部件
相关申请的引用
本申请涉及2017年3月10日提交的美国申请15/455,573;2016年12月19日提交的美国申请15/382,835;2015年1月9日提交的美国申请14/593,049;2011年5月6日提交的美国申请13/102,277,现为美国专利9,023,249;2010年5月6日提交的美国临时申请序列号61/331,990和2011年2月15日提交的美国临时申请序列号61/443,019,每个申请的全部内容以引用的方式并入本文。本申请还涉及2009年3月18日提交的美国临时专利申请61/161,328;2009年11月10日提交的美国临时专利申请61/259,940;2007年8月6日提交的美国临时申请序列号60/954,263和2008年2月21日提交的美国临时申请序列号61/030,437;2008年3月31日提交的美国申请序列号12/059,484;2007年11月6日提交的美国申请序列号11/935,655;2008年4月4日提交的美国临时申请序列号61/042,561;2008年3月11日提交的美国申请序列号61/035,559;和2008年7月11日提交的美国申请序列号61/080,140;2009年3月10日提交的美国专利申请12/401,478;2007年11月6日提交的美国专利申请11/935,655;2008年3月31日提交的美国专利申请12/059,484;2009年2月20日提交的美国专利申请12/389,946;和2009年4月3日提交的美国专利申请12/417,779,每个申请的全部内容以引用的方式并入本文。
背景技术
技术领域
本发明涉及用于聚合物固化(特别是粘合剂固化和粘结)的材料和方法,并且更具体地涉及含有粘合剂的某些电子部件和半导体部件,以及用于在其中不能获得外部光源的应用中和/或在其中需要在没有热膨胀系数失配的情况下粘结的应用中使用能量转换和光引发剂化学物质来生产所述电子部件和半导体部件的方法。
背景讨论
热固性聚合物和粘合剂是众所周知的,并且用于多种应用。一个特别重要的应用领域是微电子组装领域,其中热固性粘合剂用于将裸管芯与基材粘结,建立导电触点,并在包装和密封结构(诸如球形顶部和管芯底部填充结构)中发挥各种作用。可商购获得的材料被配制成满足各种要求,并且除单体外还可含有诸如金属、氧化物或介电粉末等的颗粒填料,以及控制导热性、粘度和其他特性的各种添加剂。通常将材料作为触变流体分配在精确的位置,并且在放置所有零件之后,将整个组件加热到聚合单体或交联树脂所需的温度。
随着现代电子部件尺寸越来越小并且集成电路包括越来越小的特征部(诸如超浅结),组装期间允许的热预算持续减少。例如,新的存储器件技术包含对温度敏感的相变材料,并且可能需要使用低温加工来组装。类似地,用于牙齿修复的聚合物复合物必须在不使患者经受高固化温度的情况下进行固化。为了解决这些问题,已经开发了许多光固化聚合物体系。一般来讲,这些体系使用至少一种光引发剂,所述光引发剂在暴露于UV光时释放化学能以形成自由基或阳离子,以在基本上环境温度下引发单体的反应。
常规光引发剂的明显限制是需要对合适光源具有直接视线接入。这阻止了常规材料用于诸如单个硅管芯的多层堆叠的高级工艺,因为UV光无法进入所述堆叠的内部。
此外,常规的UV可固化粘合剂从粘合剂珠的外表面固化到粘合剂珠的内部;并且,在大多数情况下,固化伴随着外皮的形成。在本发明中,固化更可控并且可以在整个体积的粘合剂珠上进行。
发明内容
本发明的一个目的是提供可通过间接光引发(即在不存在外部能量源的视线接入的情况下)进行固化的聚合物制剂(即单体、光引发剂和能量转换剂)。
本发明的另一目的是提供一种可在环境温度下进行固化的粘合剂组合物。
本发明的另一个目的是提供一种可流动的粘合剂组合物,其含有光引发剂和能量转换剂,优选下转换剂,诸如磷光体或闪烁体材料(或磷光体和闪烁体材料的组合)。
本发明的另一个目的是提供一种能够通过选定的电离辐射进行聚合的柔性片材粘合剂材料。
本发明的另一个目的是提供一种在环境温度下的粘合剂粘结的方法,以及一种适用于在环境温度下在堆叠中粘结硅管芯或晶片以及各种其他最终用途的粘合剂粘结的方法。
本发明的另一个目的是提供含有本发明的粘合剂组合物的电子部件和/或半导体部件。
本发明的这些和其他目的和优点,无论是单独还是其组合,都已经通过以下得到满足:发现包含以下的可固化粘合剂组合物:
含有至少一种可聚合单体或多个可交联聚合物链的可聚合或可交联有机媒介物;
至少一种响应于选定波长的光的光引发剂;以及
至少一种能量转换材料,其被选择成在暴露于选定的赋予辐射时发射所述波长的光;
以及所述可固化粘合剂组合物在制备各种组件和构造中的用途,特别是在各种电子部件和半导体部件中的用途。
附图说明
当结合附图考虑以下具体实施方式时,将更全面地理解本发明的各种其他目的、特征和附带优点,其中相同的附图标记在若干视图中表示相同或对应的部分,并且其中:
图1提供了在用X射线照射时在UVA体系中发射的材料的发射光谱。
图2提供了在用X射线照射时在UVB体系中发射的材料的发射光谱。
图3提供了在用X射线照射时在UVA、UVB和可见光体系中发射的材料的发射光谱。
图4提供了在用X射线照射时两种单独材料CaWO4和YaTO4的发射光谱。
图5提供了在用X射线照射时CaWO4和YaTO4的混合物的发射光谱。
图6提供了在用50、90和130kvp的强度的X射线照射时CaWO4和YaTO4的混合物的发射光谱。
图7提供了大涂层厚度或涂层形状对磷光体的填充系数的影响的图示。
图8提供了具有涂层的磷光体与固有磷光体表面之间的X射线强度衰减的变化。
图9提供了本发明的阻塞和填充应用的一个实施方案的图示。
图10提供了使用放置在基材中的插入模塑件以增强UV输出的本发明的一个实施方案的图示。
图11A和11B分别示出了裸二氧化硅载体颗粒和用纳米尺寸磷光体颗粒装饰的二氧化硅载体颗粒的图示。
图12提供了涂覆有在X射线下表现出等离子体行为的量子点或合金量子点或金属合金的二氧化硅载体颗粒的图示。
图13提供了用纳米尺寸的下转换剂装饰并且然后涂覆有二氧化硅的二氧化硅载体颗粒的图示。
图14提供了拴系或吸附在纳米尺寸的磷光体颗粒表面上的光引发剂的图示。
图15A和15B分别提供了用纳米尺寸的荧光体颗粒装饰的二氧化硅微颗粒的图示,所述纳米尺寸的荧光体颗粒具有拴系或吸附在其表面上的光引发剂,以及直接拴系在用纳米尺寸的荧光体装饰的颗粒周围的二氧化硅涂层上的光引发剂。
图16A和16B分别提供了未用光引发剂拴系的双层装饰和具有拴系的光引发剂的双层装饰的图示。
图17提供了本发明的各向异性导电聚合物球体的一个实施方案的图示。
图18提供了本发明的各向异性导电聚合物球体的一个实施方案在压缩和平坦化之后的图示。
图19提供了在集成电路应用中使用各向异性导电聚合物球体的本发明的一个实施方案的图示,其中所述图示出于强调的目的具有放大的特征部。
图20提供了本发明的各向异性导电的发射UV的聚合物球体的另一实施方案的图示。
图21提供了图20的各向异性导电的发射UV的聚合物球体的一个实施方案在压缩和平坦化之后的图示。
图22提供了在集成电路应用中使用各向异性导电的发射UV的聚合物球体的本发明的一个实施方案的图示,其中所述图示出于强调的目的具有放大的特征部。
图23提供了使用各向异性导电的发射UV的聚合物球体的本发明的另一实施方案的图示。
图24A-C提供了根据本发明的X射线对准器和粘结器的一个实施方案的图示。
图25A-C提供了根据本发明的X射线对准器和粘结器的另一实施方案的图示。
图26A-C提供了根据本发明的X射线对准器和粘结器的另一个实施方案的图示。
图27提供了具有计算机控制以及用ON/OFF时间编程UV强度和UV源的能力的固定分配系统的一个实施方案的图示。
图28提供了具有特别适用于UV闪烁的机械驱动系统和计算机控制的自动分配器的另一实施方案的图示。
图29提供了具有具有带有计算机控制的机械驱动系统和带有真空开孔的加热台板的自动分配器的另一个实施方案的图示。
图30A-D提供了本发明的一个实施方案的图示,其中丝网印刷机用于施加粘合剂组合物,并且UV闪烁用于在施加第二基材和用X射线照射之前实现部分固化。
图31A-C提供了将PET组分与正交层片碳复合物组分粘结的本发明的一个实施方案的图示。
图32提供了本发明的一个实施方案的示意图,其中通过直接施加UV能量进一步固化具有直接视线的圆角。
图33A-C提供了本发明的一个实施方案的示意图,其中2种粘合剂通过单独的分配器(图33A)或通过2个同轴分配器(图33B-C)施用。
图34提供了用于本发明的具有自动门和内部UV灯的X射线系统的一个实施方案的图示。
图35A和35B提供了用于本发明的传送系统的实施方案的图示。
图36提供了使用用于同时固化不同组件的多于一个X射线源的本发明的一个实施方案的图示。
图37A-C提供了本发明的方法的不同实施方案的图示,其中被照射的工件相对于辐射源以不同的方式进行取向。
图38A和38B提供了具有旋转台和旋转臂的晶片粘结工具的本发明的一个实施方案的图示。
图39提供了可用于本发明的管芯到晶片的粘结工具的一个实施方案的图示。
图40A-C提供了可用于本发明的X射线系统和传送系统的不同实施方案的图示。
图41提供了可用于本发明的非接触室设计的一个实施方案的图示。
图42提供了可用于本发明的非接触室设计的另一实施方案的图示。
图43A-B提供了用于将紧固件与复合板粘结的本发明的实施方案的图示。
图44提供了本发明的一个实施方案用于生产底部填充组件的图示。
图45提供了本发明的一个实施方案用于生产高密度电路的底部填充的图示。
图46提供了本发明的一个实施方案用于生产非流动底部填充组件的图示。
图47提供了本发明的一个实施方案用于球形顶部包封的图示。
图48提供了本发明的一个实施方案用作阻塞和填充粘合剂的图示。
图49提供了本发明的一个实施方案通过模塑用于包封的图示。
图50A和50B分别提供了本发明的实施方案用于逻辑器件和MEMS器件的盖子密封的图示。
图51提供了本发明的一个实施方案用于微球栅阵列的球形顶部包封的图示。
图52提供了本发明的一个实施方案用于柔性电路与集成电路(IC)之间的TAB粘结区域的包封的图示。
图53提供了本发明的一个实施方案用于使用膜粘合剂粘结具有镜像特征部的塑料器件的图示。
图54A和54B提供了本发明的一个实施方案用于形成具有流体通道的子组件的图示。
图55A和55B提供了本发明的一个实施方案用于将有源器件连接到流体贮存器的图示。
图56A和56B提供了可在本发明中用于固化的漏光纤维元件的图示
图57A和57B提供了使用漏光纤维元件的本发明的一个实施方案的图示。
图58提供了数字印刷压机的示意图。
图59A和59B提供了用于形成-45+45复合层片组件的本发明的一个实施方案的图示。
图60A和60B提供了用于形成0+90复合层片组件的本发明的一个实施方案的图示。
图61描绘了用于将无机下转换剂颗粒拴系到光引发剂的一种合适的化学方法,其中二氧化硅涂覆的磷光体与氨基丙基三乙氧基硅烷(APTES)反应,然后改性的光引发剂与侧链氨基丙基结合。
图62提供了本发明中使用的典型方法的一个实施方案的方块流程图。
图63A-G提供了用于形成具有导电触点和金属散热器的各种半导体IC器件的本发明的一个实施方案的生产阶段的图示。
图64提供了本发明的一个实施方案的图示,其中使用散热器形成盖子密封件,用于气密地密封在腔内部的包装IC。
图65提供了本发明的一个类似实施方案的图示,其中使用散热器形成盖子密封件,用于气密地密封在腔内部的包装IC,并且其中所述散热器的一部分由窗口代替,所述窗口传输由IC或IC的组合接收或传输的所需波长的光。
图66提供了本发明的另一实施方案的图示,其中使用散热器形成盖子密封件,用于气密地密封在腔内部的包装IC,并且其中所述散热器和散热器支撑件二者的一部分由窗口代替,所述窗口传输由IC或IC的组合接收或传输的所需波长的光。
图67提供了本发明的包封IC的图示,其中IC器件由具有高透射率的固化树脂的形成的球形顶部进行包封。
具体实施方式
本发明提供了一类新的可固化粘合剂。这类新的粘合剂具有以下所需属性中的一种或多种:
a-在没有视线的情况下固化(发生粘合的粘结线是待粘结的结构的内部)
b-在没有穿透深度限制的情况下固化(粘结线可以深入材料内部而不影响固化动力学)
c-在没有热膨胀失配的情况下固化(在室温下粘结以及在粘结线处避免压缩和拉伸应力的能力)
d-选择性地固化粘合剂(仅在粘合剂具有能量转换颗粒的情况下,粘合剂形成网络;这可用于生成选择性固化几何形状)
e-所述粘合剂具有合适的特性(电学-包括不导电至各向异性半导电至导电,机械-刚性或顺应性(使用第二相增韧剂),光学-从透明至不透明,酸与碱控制-承受从油墨到水性溶液的各种环境的能力,所需范围的粘合剂粘结强度)
这些属性使得可以实现先前不可达到的某些粘合剂固化应用,以及改进已有的粘合剂固化应用。本发明的粘合剂固化导致与现有技术相比有利的新型组件和加工方法。
在一个实施方案中,本发明提供了一种在环境温度下使用光引发剂化学物质来粘结材料的方法,所述光引发剂化学物质将吸收的光能(通常为UV光)转换成引发物质(诸如自由基或阳离子)形式的化学能,并且由此在含单体的粘合剂中引发聚合反应。另一个方面,本发明提供了一种在外部光源不能接近待粘结区域的情况下进行光引发的方法。
根据本发明的一个实施方案,粘合剂组合物包含:包含至少一种可聚合单体的有机媒介物;响应于选定波长的光的至少一种光引发剂;以及至少一种能量转换材料,其被选择成在暴露于选定的赋予辐射时发射选定波长的光。
根据本发明的另一个方面,粘合剂粘结的方法包括以下步骤:a)将可聚合粘合剂组合物与两种或更多种待粘结的组分接触以形成组件,所述可聚合粘合剂组合物包含至少一种光引发剂和至少一种能量转换材料;以及,b)用第一波长的辐射照射所述组件,所述第一波长能够通过至少一种能量转换材料(优选下转换材料诸如磷光体)转换成能够活化至少一种光引发剂的第二波长。
根据本发明的又一方面,粘合剂粘结方法包括以下步骤:a)使用诸如通过拴系的吸附或化学粘结的方法将至少一种光引发剂和至少一种能量转换材料彼此附接,以及然后将由此形成的化学物质与树脂混合成混合物。
根据本发明的另一实施方案,一种用于在2个不同基材之间产生接合并建立粘合的方法包括使用粘合剂体系,所述粘合剂体系继而含有多个合成聚合物链和至少一种光引发剂,所述光引发剂是光活性交联剂。在这种情况下,至少一种光引发剂作为光活性交联剂的作用是通过形成本质上可以是共价键或离子键的键将一条聚合物链与另一条聚合物链连接。在这种情况下,初始粘性材料通过形成3D网络结构而转变成固体材料,所述3D网络结构通过在树脂体系中的预先存在的链之间建立连接而实现。此种交联可适用于合成聚合物(用于粘合剂)和天然聚合物(诸如蛋白质或DNA)两者。
本发明一个实施方案的本发明的材料包含两种主要组分:第一种是包含至少一种光引发剂的单体组合物;以及第二种是至少一种能量转换材料,其能够吸收所赋予的能量并转换所述能量以产生光谱范围内的光子,所述光子可被所述至少一种光引发剂吸收并因此引发单体组合物的聚合。优选地,能量转换材料是下转换材料,其能够吸收更高能量的光子(通常是X射线)并且向下转换以产生在可被光引发剂有效吸收的光谱范围内的更低能量的光子(通常是UV,但也可以是可见光)。任选组分包括但不限于:有机和无机填料,诸如氧化物、电介质、导体、纤维等;增塑剂;造孔剂;和其他物理添加剂。
在一个替代实施方案中,可固化粘合剂组合物包含多个可交联聚合物链而不是可聚合单体。在本实施方案中,所述光引发剂是在活化时能够在可交联聚合物链之间建立交联以形成3D聚合物网络,因此通过交联固化粘合剂组合物的一种光引发剂。虽然基于使用包含可聚合单体的可固化粘合剂组合物的实施方案描述了以下许多实施方案,但是这种描述仅仅是出于方便的目的,并且包含多个可交联聚合物链的可固化粘合剂组合物的使用在所述实施方案中可以被同等替代。
在本发明中,能量转换材料可以是能够将所赋予的能量转换成更高能量的光子(“上转换材料”)或更低能量的光子(“下转换材料”)的任何材料。合适的上转换材料和下转换材料在以下中描述:2009年3月18日提交的美国临时专利申请61/161,328;2009年11月10日提交的美国临时专利申请61/259,940;2007年8月6日提交的美国临时申请序列号60/954,263和2008年2月21日提交的美国临时申请序列号61/030,437;2008年3月31日提交的美国申请序列号12/059,484;2007年11月6日提交的美国申请序列号11/935,655;2008年4月4日提交的美国临时申请序列号61/042,561;2008年3月11日提交的美国临时申请序列号61/035,559;和2008年7月11日提交的美国临时申请序列号61/080,140;2009年3月10日提交的美国专利申请12/401,478;2007年11月6日提交的美国专利申请11/935,655;2008年3月31日提交的美国专利申请12/059,484;2009年2月20日提交的美国专利申请12/389,946;和2009年4月3日提交的美国专利申请12/417,779,每个申请的全部公开内容以引用的方式并入本文。所赋予的能量可以是穿透在赋予能量源与粘合剂组合物本身之间的材料所需的任何所需能量。例如,所赋予的能量可以是近红外光(NIR),其中上转换材料将所赋予的能量转换成可被所用的光引发剂吸收的UV光子。优选地,所赋予的能量是X射线能量,其中能量转换材料是下转换材料,诸如磷光体或闪烁体。出于方便的目的,以下讨论将涉及下转换材料以及使用X射线作为所赋予的能量。然而,这并非旨在限制本发明,并且可以使用所赋予的能量和能量转换材料的任何所需组合,只要能量转换材料生成的光子能够被光引发剂吸收即可。
相关方法包括两个基本步骤:a)将可聚合粘合剂组合物与两种或更多种待粘结的组分接触以形成组件,所述可聚合粘合剂组合物包含光引发剂和下转换材料;以及b)用第一波长的辐射照射组件,所述第一波长能够通过磷光体向下转换成能够活化光引发剂的第二波长。任选步骤包括但不限于:通过针以选定图案分配粘合剂或通过具有选定图案的掩模丝网印刷粘合剂;光图案化粘合剂;将粘合剂预成型为具有各向同性或各向异性导电性的片材;以及在固化过程中对粘合剂粘结施加压力。
可优选调节粘合剂的分配和粘合剂特性以满足以下要求:
-所述分配可以使用任何常规分配系统来进行,包括但不限于使用活塞或螺旋泵的分配、旋涂、喷涂或丝网印刷。
-如果需要,粘合剂可含有用于检查的示踪元素。
-如果需要,粘合剂可含有用于光学检查的颜料。
-如果需要,可以使粘合剂在固化后改变颜色。
出于参考目的,下文列出的是电磁频谱的各个区域的公认的近似波长、频率和能量极限:
若干种应用领域可以从这类新型粘合剂和用于固化此类新型粘合剂的方法中受益,并且这些领域包括:
半导体的粘结,诸如晶片粘结、管芯到晶片的粘结、管芯粘结上的管芯、室温下的包装组件上的包装等。这是各向异性导电粘合剂的特别有用的领域。
半导体的包封:诸如球形顶部、阻塞和填充、模塑(PMC)、插入模塑和倒装芯片底部填充。
半导体光刻:本发明的粘合剂组合物和对应的组成材料化学物质可用于前端半导体中以图案化栅极结构。光刻应用包括使用具有负性或正性的色调和显影的光刻胶材料。X射线的曝光可以通过可调节开孔(特别是由铅制成的那些开孔)进行门控,其中可对距离编程以允许X射线与所分配的粘合剂的特定区域相互作用。此外,使用X射线的图案化可以通过含有重金属的掩模来执行,所述重金属在一些区域而不是其他区域中使X射线衰减。
其他图案化方法可以通过使用压印光刻来绕过所有掩模工作。在这种情况下,浸渍转移方法和冲压方法可用于沉积含有粘合剂组合物的图案,所述粘合剂组合物具有包含能量转换颗粒的特征。在这种情况下,X射线将固化其中含有转换颗粒的粘合剂区域。
本发明还提供了制备新型复合物的能力。新型层片(复合物的基本构件)含有涂覆有聚合物树脂的纤维、能量转换颗粒和合适的催化剂/光引发剂体系。这种新型预浸材料用于复合物中使用的堆积加工(正交层片,单向层片),以产生从简单形状到复杂3D形状和结构(诸如圆形容器)范围内的轻质结构和形状。然后将堆叠或堆积暴露于X射线以进行固化和凝固。
复合物的粘结:复合物与其他复合物、与金属和金属合金、与橡胶、与皮革以及与无机材料(诸如陶瓷)的粘结,特别可用于将非类似材料彼此粘结在一起。
机械紧固件与复合物的附接:小金属部件与诸如铆钉等的大型复合板的粘结可用于固定2个单独的结构。常规地,这需要在金属触点上使用金属来完成焊接连接。本发明的粘合剂能够实现更宽的制造操作自由度。例如,对于航空航天和汽车应用,例如KUKA机械手(由德国Augsburg的KUKA Aktiengesellschaft出售)可以配备粘合剂涂敷器(诸如分配器)和X射线源以及取放机以:分配粘合剂,进行光学检查,放置铆钉并将其固定在合适位置,并用X射线固化,所有这些都在与任何其他已知方法相比的纪录时间内完成。此外,室温粘结的优点使翘曲最小化。
天然复合物:大型木梁或其他天然复合材料的制造常规地由例如小木片通过树脂涂覆所述木片并在高压和高温下粘结组件以固化粘合剂来完成。本发明的粘合剂允许室温粘结,并且在固化过程中不需要使水分挥发。这远比制造此类复合物的常规方法要好得多,所述常规方法通常使用微波产生热量,但在加工过程中会产生大量的热量,有时甚至会导致工件着火!
金属的粘结:在汽车中粘结金属底盘和门(以代替常规的感应加热)。金属片材弯曲成特殊形状,并且然后通过首先在底盘周围分配珠子并配合金属片,固定它们的位置,接着使用本发明的方法和组合物固化,来将所述金属片材以粘合的方式粘结在一起。
流体通道:通过将图案化的基材粘结在一起以形成流体通道,在塑料、金属和无机基材中建立所述流体通道。异质塑料的接合、半导体与塑料的接合可以在没有由热膨胀引起的失配的情况下完成。
多芯片模块:在KOVAR基材上的管芯,以及多芯片模块上的盖子密封。
MEMS:在室温下用玻璃晶片密封MEMS(没有头部偏移)。
光电:用于使光强度产率(DWDM)最大化的对准,以及在室温下施加粘合剂并固化(保持最大光强度通过)。对准V形槽中的纤维,并且固化并对准多通道光纤并固化,同时保持光强度通过。
附接可变形基材,特别是异质基材:橡胶与泡沫、皮革与橡胶、皮革与皮革、或织物与织物、或任何可变形基材的组合的附接。
本发明粘合剂技术的其他优选应用包括但不限于:
·活组织的粘合剂粘结,不仅是表面粘结而且还包括内部粘结。这消除了对缝合线或缝钉的需要。目前,氰基丙烯酸酯(“SuperGlue”)型粘合剂用于这些应用。然而,氰基丙烯酸酯通常在它们固化时产生热量,这会导致细胞消融。
·活化凝血剂以治疗出血-在创伤或广泛手术中最有价值。本发明的粘合剂可用作创伤患者的临时“止血”措施,使护理人员有更多时间来处理伤害而不会使患者流血。
·建筑材料的远程固化,最适合在整个待固化制品中均匀固化的局部修复。
·在不加热的情况下的织物(诸如恶劣天气齿轮)的粘结,从而消除热粘结所产生的熔化以及将(缝合)孔放入不可渗透材料中的需要。
一个特别优选的应用领域是微电子组装领域,其中热固性粘合剂用于将裸管芯与基材粘结,建立导电触点,并在包装和密封结构(诸如球形顶部和管芯底部填充结构)中发挥各种作用。可商购获得的材料被配制成满足各种要求,并且除单体外还可含有诸如金属或介电粉末等的颗粒填料,以及控制粘度和其他特性的各种添加剂。通常将材料作为触变流体分配在精确的位置,并且在放置所有零件之后,将整个组件加热到聚合单体所需的温度。本发明避免了使用此种加热的需要,并且可以产生粘合剂的固化,而没有翘曲或对微电子器件的其他热损坏的风险。
随着现代电子部件演变成更小的尺寸并且集成电路包括越来越小的特征部(诸如超浅结),组装期间允许的热预算持续减少。类似地,用于牙齿修复的聚合物复合物必须在不使患者经受高固化温度的情况下进行固化。为了解决这些问题,已经开发了许多光固化聚合物体系。一般来讲,这些体系使用光引发剂,所述光引发剂在暴露于UV光时释放自由基或阳离子形式的化学能,以在基本环境温度下引发单体的反应。
对合适光源具有直接接入需要对光引发剂的明显常规限制。这阻止了常规材料用于诸如单个硅管芯的多层堆叠的高级工艺,因为UV光无法进入所述堆叠的内部。这些限制不存在于本发明的粘合剂中,因为本发明的粘合剂可以通过施加电离辐射(诸如X射线)而容易地固化,从而以最小的热量将粘合剂固化在合适位置。
在下文的描述中,将更详细地描述本发明的各个方面,使得本领域技术人员可以更全面地理解如何制造并使用本发明。尽管本说明书讨论了使用X射线作为固化加工的触发辐射,但是其他类型的电离辐射也可以使用类似的下转换剂用作触发辐射,包括但不限于γ射线或粒子束(诸如质子束或电子束)。
CTE-失配
不同材料的热膨胀系数之间的失配可以通过下表说明。本发明能够在不加热的情况下使材料接合,并且因此避免了通常在热固化粘合剂所需的加热过程中捕获的应力。本发明能够在截然不同的CTE的材料之间进行固化。
材料 热膨胀系数/ppm/C
二氧化硅玻璃 0.6
E-玻璃 4.8
氧化铝 8.7
14
23-24
聚酰亚胺 38-54
环氧树脂 45-65
聚酯 55-100
聚苯乙烯 60-80
聚丙烯 85-200
有机硅树脂 160-180
光引发剂
本发明的材料的第一基本组分是包含光引发剂的单体体系。基于丙烯酸酯或苯乙烯的制剂的自由基聚合已得到广泛开发。它通常依赖于使用近UV(300-400nm范围)的辐射固化,尽管光引发剂现在可用于可见光高至IR的范围内以及至深UV的范围内。产生路易斯酸或布朗斯台德酸的阳离子光引发剂可用作阳离子聚合材料(例如环氧树脂)和能够通过缩聚反应交联的树脂的引发剂。
光引发剂通常分为两类:I型光引发剂,其在照射时经历单分子键裂解,从而产生自由基;以及II型光引发剂,其经历双分子反应,其中所述光引发剂的激发态与第二分子(称为共引发剂)相互作用以生成自由基。UV光引发剂可以是I型或II型,而可见光光引发剂几乎完全是II型。
I型UV光引发剂包括但不限于以下类别的化合物:苯偶姻醚、苯偶酰缩酮、α-二烷氧基苯乙酮、α-氨基烷基苯酮和酰基氧化膦。II型UV光引发剂包括但不限于二苯甲酮/胺和噻吨酮/胺。可见光引发剂包括但不限于环戊二烯钛。
应当理解,最有效的体系是基于两个考虑因素(即单体体系的类型和可用光的类型)而选择的特定光引发剂的体系。
大量可用的光引发剂化合物是本领域已知的。已经表征了以下化合物[可购自Sigma-Aldrich Corp.,St.Louis,MO]并且可得到它们的UV吸收光谱:苯乙酮,99%;茴香偶姻,95%;蒽醌,97%;蒽醌-2-磺酸,一水合钠盐,97%;(苯)三羰基铬,98%;苯偶酰,98%;苯偶姻,升华,99.5+%;苯偶姻乙醚,99%;苯偶姻异丁基醚,技术,90%;苯偶姻甲醚,96%;二苯甲酮,99%;二苯甲酮/1-羟基环己基苯基酮,50/50共混物;3,3',4,4'-二苯甲酮四羧酸二酐,升华,98%;4-苯甲酰联苯,99%;2-苄基-2-(二甲基氨基)-4'-吗啉代丁酰苯,97%;4,4'-双(二乙基氨基)二苯甲酮,99+%;4,4'-双(二甲基氨基)二苯甲酮,98%;樟脑醌,98%;2-氯噻吨-9-酮,98%;(异丙苯)环戊二烯基铁(II)六氟磷酸盐,98%;二苯并环庚烯酮,97%;2,2-二乙氧基苯乙酮,95%;4,4'-二羟基二苯甲酮,99%;2,2-二甲氧基-2-苯基苯乙酮,99%;4-(二甲基氨基)二苯甲酮,98%;4,4'-二甲基苯偶酰,97%;2,5-二甲基二苯甲酮,技术,95%;3,4-二甲基二苯甲酮,99%;二苯基(2,4,6-三甲基苯甲酰基)氧化膦/2-羟基-2-甲基苯丙酮,50/50共混物;4'-乙氧基苯乙酮,98%;2-乙基蒽醌,97+%;二茂铁,98%;3'-羟基苯乙酮,99+%;4'-羟基苯乙酮,99%;3-羟基二苯甲酮,99%;4-羟基二苯甲酮,98%;1-羟基环己基苯基酮,99%;2-羟基-2-甲基苯丙酮,97%;2-甲基二苯甲酮,98%;3-甲基二苯甲酮,99%;甲基苯甲酰甲酸酯,98%;2-甲基-4'-(甲硫基)-2-吗啉代苯丙酮,98%;菲醌,99+%;4'-苯氧基苯乙酮,98%;噻吨-9-酮,98%;三芳基锍六氟锑酸盐,混合,在碳酸亚丙酯中50%;和三芳基锍六氟磷酸盐,混合,在碳酸亚丙酯中50%。
其他合适的光引发剂包括可从BASF Corporation商购获得的各种IRGACURE产品。用于UV固化的光引发剂的关键产品选择指南2003在此以引用的方式整体并入本文。提供代表性的化学类光引发剂作为实例。应当理解,还包括此类化学物质的衍生物。代表性清单包括α-羟基酮以及基于(1-羟基-环己基-苯基-酮、2-羟基-2-甲基-1-苯基-1-丙酮、2-羟基-1-[4-(2-羟基乙氧基)苯基]-2-甲基-1-丙酮)的衍生物。苯基乙醛酸酯以及基于(甲基苯甲酰甲酸酯、氧基-苯基-乙酸2-[2-氧代-2-氧基-苯基-乙酸2-[2-氧代-2-苯基-乙酰氧基-乙氧基]-乙酯和氧基-苯基-乙酸2-[2-羟基-乙氧基]-乙基酯)的衍生物。苄基二甲基缩酮和基于(α,α-二甲氧基-α-苯基苯乙酮)的衍生物。α-氨基酮以及基于(2-苄基-2-(二甲基氨基)-1-[4-(4-吗啉基)苯基]-1-丁酮、2-甲基-1-[4-(甲硫基)苯基]-2-(4-吗啉基)-1-丙酮/IRGACURE 369(30重量%)+IRGACURE 651(70重量%)的衍生物。单酰基膦(MAPO)以及基于(二苯基(2,4,6-三甲基苯甲酰基)-氧化膦的衍生物。MAPOα-羟基酮以及基于DAROCURTPO(50重量%)+DAROCUR 1173(50重量%)的衍生物。双酰基膦(BAPO)以及基于氧化膦、苯基双(2,4,6-三甲基苯甲酰基)的衍生物。基于(分散在水中的(IRGACURE 819(45%活性))的BAPO分散体。BAPO/α-羟基酮(IRGACURE 819(20重量%)+DAROCUR 1173(80重量%)。茂金属(双(η5-2,4-环戊二烯-1-基)、双[2,6-二氟-3-(1H-吡咯-1-基)、苯基]钛)。碘鎓盐以及基于碘、(4-甲基苯基)[4-(2-甲基丙基)苯基]-、六氟磷酸盐(1-)的衍生物。
本发明的有机媒介物可包含可聚合组合物或可交联组合物。术语有机媒介物在本文中用于表示可固化粘合剂组合物在固化(无论是通过聚合还是交联)时最终形成树脂的部分。因此,可聚合有机媒介物包含至少一种可聚合单体。因此,可交联有机媒介物包含多个可交联聚合物链。理想地,有机媒介物具有合适的粘度,用于分配/施加到所需基材上。
可以基于诸如强度、柔韧性或顺应性等的总体要求,与基材特性的匹配,以及所涉及的粘结类型(诸如导电粘结相对于严格结构粘合剂粘结),来选择单体体系。
可用于本发明的各种应用的一些合适的单体体系包括但不限于:环氧树脂、酚醛树脂、氨基甲酸酯、丙烯酸树脂、氰基丙烯酸酯、硅氧烷、多硫化物、聚酰亚胺、聚苯基喹喔啉和苯乙烯。合适的单体化学物质的来源是Cyril A.Dostal的“Engineered MaterialsHandbook:Adhesives and Sealants,第III卷(v.3)”CRC Press,1990,其内容以引用的方式并入本文。在本发明的一个特别有趣的实施方案中,粘合剂可用于将活组织与活组织粘结,诸如在伤口或手术开口的粘合剂缝合中。产生生物相容性聚合物的任何单体体系均可用于此类应用,优选通常已用于伤口护理的氰基丙烯酸酯,但其中X射线通过将X射线向下转换成足以促进基于单体的粘合剂的固化的能量而引发固化。本文所述的基于X射线的固化还包括基于通过活化合适的交联剂而交联聚合物链的粘合剂。
能量转换材料
本发明的材料的第二基本组分是能够转换所赋予的能量并将其转换成光谱范围内的光子的材料,所述光子可被光引发剂有效地吸收。优选地,能量转换材料是下转换材料,其能够吸收更高能量的光子(通常来自电离辐射,诸如X射线)并且向下转换以产生在可被光引发剂有效吸收的光谱范围内的更低能量的光子(通常是UV)。这些材料大致分为两类:闪烁体和磷光体。许多下转换剂材料是已知的,包括但不限于:金属氧化物;金属硫化物;掺杂金属氧化物;或混合的金属硫属元素化物。此类别中还包括有机-无机杂化闪烁体,诸如Kishimoto等(Appl.Pys Lett.2008,93,261901)所公开的,其内容以引用的方式并入本文。
许多其他下转换颗粒、上转换颗粒、等离子体活性颗粒及其组合公开于:2009年3月18日提交的美国临时专利申请61/161,328;2009年11月10日提交的美国临时专利申请61/259,940;2007年8月6日提交的美国临时申请序列号60/954,263和2008年2月21日提交的美国临时申请序列号61/030,437;2008年3月31日提交的美国申请序列号12/059,484;2007年11月6日提交的美国申请序列号11/935,655;2008年4月4日提交的美国临时申请序列号61/042,561;2008年3月11日提交的美国临时申请序列号61/035,559;和2008年7月11日提交的美国临时申请序列号61/080,140;2009年3月10日提交的美国专利申请12/401,478;2007年11月6日提交的美国专利申请11/935,655;2008年3月31日提交的美国专利申请12/059,484;2009年2月20日提交的美国专利申请12/389,946;和2009年4月3日提交的美国专利申请12/417,779,每个申请的全部公开内容以引用的方式并入本文。
磷光体选择标准基于发射的峰值强度、发射的UV的峰值位置、对具有最小存储要求的可用磷光体的需要、处理和包装、磷光体耦合到X射线能量的能力、对其粒度和粒度分布的控制,并且最后是它们的表面化学。
峰值发射目标在310nm与400nm之间或仅仅是UVA光谱。需要将X射线强度最大转换为UVA强度。这种转换以各种相互关联的术语进行描述。有时它被称为量子产率或X射线与磷光体之间相互作用的概率。这些相互关联的术语包括耦合效率、发射有效性或X射线与磷光体之间的有效Z。表1报道了一些最佳X射线磷光体的列表。
表1
UVA/UVB发射
在一些应用中,所需的入射或引发能量与X射线(诸如EUV)不同,而所需的下转换输出强度保留在UVA中。在其他应用中,所需的入射或引发能量是X射线,但是磷光体的所需的下转换能量输出在UVB中。还在其他情况中,所需的入射或引发能量是X射线,但是磷光体的所需的下转换能量输出在UVA和UVB中。选定的磷光体被选择成与激发源(包括X射线、极UV和电子束)一起工作。在X射线体系内,选定的磷光体可以耦合到从用于治疗性肿瘤治疗、医学成像和半导体检查的可商购获得的设备源发出的X射线光子的通量。
图1中提供了在UVA体系中发射的材料(YTaO4)的实例。据报道,YTaO4在X射线下具有337nm处的峰值发射,并且在本发明的过程中测量为在327nm处发射。用于进行实验的X射线系统是Faxitron X射线系统。图2中提供了在UVB中具有输出的材料的实例(LaF3:Ce)。据报道,LaF3:Ce在X射线下在280nm处发射,并且在本发明的过程中测量为在300nm处发射。图3中提供了在UVA、UVB和可见光中具有输出的材料的实例(LaOBr:Tm3+)。涂覆有二氧化硅的LaOBr:Tm3+在本发明的过程中测量为在UVB、UVA和可见光中发射。
混合的或合金的磷光体
另一种感兴趣的可能性是,能够混合至少2种磷光体以与起始磷光体相比扩大混合物的输出的能力。在本实例中,将各自在不同区域中发射的2种磷光体混合在一起并测量输出光谱输出以证明影响混合物与起始材料相比的输出强度的能力。(参见图4和5)。
初始能量(在这种情况下为X射线)的强度影响磷光体的UV输出。提供以下实例以说明如何改变X射线的光子能量强度可以调制X射线的光输出。测量磷光体(CaOW4)的相对强度输出,作为X射线光子能量的函数。通过改变长丝与靶标之间存在的峰值电压来改变X射线能量。在这种情况下,所述靶标是钨。使用相同质量的磷光体在50kvp、90kvp和130kvp下进行所述测量。在比较不同材料方面,任意单位的发射的相对强度是指示性的,但不是决定性的。然而,在用于进行测量的相同条件下,显然X射线强度越高,所发射的波长的相对强度越高。(参见图6)。
磷光体可以由不同的化学物质合成,并使用不同的处理来控制它们的形态,影响它们的特性和光强度输出,但更重要的是它们在环境空气环境中的稳定性。优选具有不吸湿的磷光体。当磷光体在水中稳定并且不含有毒的掺杂剂时,它们更容易处理和使用;然而,即使当磷光体在水中不稳定并且含有有毒的掺杂剂时,磷光体颗粒也可以使用化学合成方法进行涂覆,这会导致保护涂层的堆积,所述保护涂层保护磷光体免受环境影响(例如水)并且保护环境免受磷光体中的有毒掺杂剂(例如溴化物)的影响。保护涂层可以是二氧化硅或可以是金刚石或类金刚石碳。可以使用溶胶-凝胶衍生技术形成二氧化硅。金刚石和类金刚石碳可以源自基于氢-甲烷气体混合物的化学气相沉积(CVD)。磷光体的处理和包装可以通过在溶液中或以粉末形式分散来实现。发现二氧化硅涂覆的磷光体制成不会凝聚的良好粉末。
除了高强度、在正确波长下的发射之外,磷光体的另一个所需属性是具有低比重(如果可能的话)。当磷光体混合到另一种介质(诸如树脂或含有光引发剂的树脂混合物)中时,低比重可有助于避免沉淀和沉降。
流变性调节
磷光体的粒度是相关因素。粒度越小,表面积越大。发现小颗粒比较大的磷光体颗粒更有效地改变含有光催化剂的树脂的流变性。粒度越大,强度输出越高。当磷光体含有粒度分布(不是单峰粒度分布)时,发现磷光体在将X射线转换成UVA以及活化树脂体系内部的光催化剂方面表现良好。具有小颗粒(即具有高表面积)的磷光体成功地用于增加树脂的粘度,而不使用活性二氧化硅(或AEROSIL)。事实上,开发了一种新方法,即加入足够的磷光体纳米颗粒以调节粘度代替活性二氧化硅。当纳米颗粒与具有高达5微米粒度的颗粒的磷光体一起使用时,发现了最佳的光活化和粘度调节。本质上,颗粒的双峰分布有助于填充系数(或磷光体装载到树脂中的含量)以及有助于流变性控制和UVA光强度生成方面,用于配制具有可控粘度、在X射线下良好固化的粘合剂。三峰粒度分布或大粒度分布在平衡粘合剂的流变性和粘合剂在X射线下的固化响应方面是有效的。
有机材料
除了本发明中描述的无机化合物(或磷光体)之外,有机化合物也可用于实现本发明中描述的相同目的。蒽和基于蒽的化合物可用于实现本发明的目的(在没有视线和热能的情况下固化)。蒽在紫外光下呈现蓝色(400-500nm峰值)荧光。此外,发现蒽在X射线能量下呈现荧光。测得蒽光输出为Nal(Tl)的40%至50%。
各种塑料闪烁体、塑料闪烁体纤维和相关材料由聚乙烯基甲苯或苯乙烯和氟石制成。这些和其他制剂是可商购获得的,诸如作为BC-414、BC-420、BC-422或BCF-10购自SaintGobain Crystals。
其他聚合物能够在可见光范围内发射,并且这些聚合物包括:
此外,可以将X射线转换成UV能量的有机化合物可以交织成合成聚合物链。这些链可用作交联粘合剂的基础树脂体系;因此导致形成一组新的X射线可活化的树脂体系。
表2中提供了上升峰值发射波长中的下转换磷光体的列表。有趣的是,可以从此表中选择磷光体以在310-550nm的峰值发射波长下提供选择性发射,因此提供用于活化多种光引发剂的多种潜在材料。
通过添加光敏剂可以使UV接收化学物质更具反应性。这种过程称为光敏化。可以添加某些光敏化学化合物以向反应物和反应物位点补充光子能量以促进或增强固化。
对于UV固化应用,感兴趣的是具有在暴露于UV辐射时会形成处于激发态的中间体的化学物质,所述中间体继而发射正确波长的光用于发生进一步固化。换句话讲,敏化剂在能量转移中起作用。
许多光敏化化学物质是已知的并且在工业中广泛使用,并且这些化合物包括仅举几个例子:苊醌,醋蒽醌或其与蒽酮和/或萘醌、紫蒽酮、异紫蒽酮、荧光素、红荧烯、9,10-二苯基蒽、并四苯、13,13'-二苯甲腈(13,13'-dibenzantronile)、乙酰丙酸的混合物。
表2
光谱匹配
应当理解,最有效的体系是基于其吸收、其对入射辐射强度的光催化敏感性(即能量转移效率)而选择的特定光引发剂的体系。
在本发明的许多实施方案中,发射波长取决于选择用于进行所考虑的光催化反应的固化的特定下转换剂材料。因此,为了确保从磷光体到光引发剂的最有效能量转移,磷光体与正确的光引发剂配对,以使从下转换剂材料发射的频率/波长与光引发剂的峰值吸收相匹配。这被称为本发明中的光谱匹配。上文提到的光谱匹配增加了克服活化能垒门控反应所需的成功尝试的机会。表3示出了某些光引发剂的相对峰值吸收和某些磷光体的相对峰值发射。对应于表格进行光引发剂和磷光体的配对,并如实例中所示成功地证明。
表3
距离的优化
此外,磷光体颗粒与光引发剂之间的距离影响能量转移的效率。光引发剂与磷光体之间的距离越短,导致发生成功反应的能量转移的机会就越大。在可固化体系的混合物内部存在许多颗粒和相对高浓度的光引发剂。结果,颗粒与光引发剂之间存在多于一个的距离。在这些情况下,我们指的是磷光体颗粒与光引发剂之间的平均距离。
可以使用拴系吸附技术等将光引发剂粘附到磷光体颗粒的表面上。在拴系的情况下,高分子量相对于低分子量将是改变光引发剂与颗粒相应表面之间的距离的有效方式。在通过吸附沉积的情况下,磷光体表面与光引发剂之间的距离可以通过对涂层进行内分层而改变,所述涂层对磷光体发射的辐射是透明的。SiO2是此种内层的一个实例,因为它对UV是透明的。
可以使用表面涂层来影响磷光体与光引发剂之间的填充系数和平均距离。因此,具有固有表面化学的磷光体的填充系数将与具有相对厚的涂层的磷光体的填充系数不同。
上文定义的光谱匹配、光引发剂与磷光体之间的平均距离、磷光体颗粒在引发辐射下产生的辐射强度、粒度分布的组合构成了本发明的最有效的实施方案。
关于磷光体的填充系数,沉积在颗粒表面上的足够大的二氧化硅涂层将会改变粉末有效密度的有效填充系数(即每单位体积粉末的质量)。类似地,涂覆有具有不规则形状的涂层的磷光体可以进一步影响每单位体积的质量。例如,平均粒度为5微米的粉末可以用足够的二氧化硅进行涂覆,以获得15微米的平均尺寸。
由于涂层可以改变其每单位体积的粉末质量的有效密度,磷光体本身或多或少地对入射的X射线束作出响应。X射线能量与磷光体之间相互作用的概率随着涂层壁厚度的增加而降低。图7中提供了一个图示,其中相同量的磷光体(即,X射线耦合剂)可以占据更大的厚度。
借助于改变磷光体的浓度或通过改变磷光体的有效填充系数,我们可以影响X射线能量与磷光体填充树脂的相互作用的概率。X射线的强度可以在具有涂层的磷光体与固有磷光体表面之间不同地衰减(参见图8)。
涂覆的磷光体可用作树脂体系中的填料。工业上广泛使用的填料是二氧化硅。在一些情况下,使用氧化铝和氮化硼。硅酸盐填料用于代替一些树脂体积而不降低可固化材料的特性。填充二氧化硅粉末可节省成本。与未填充体系相比,填充体系通常更加机械稳定并且更具成本效益。
固化分类:
UV固化材料可以是多种多样的;但是,作为一般分类,以下材料组通过指定的树脂家族、相关的引发剂、固化机制和适当的应用来概述。这绝不是一个包容性列表,而只是进一步说明的一般分类。本发明与这些分类中的每一类相容,所述分类包括自由基交联或聚合、阳离子交联、碱催化交联。
自由基交联:
自由基交联或聚合使用树脂体系,诸如丙烯酸酯、马来酸酯、苯乙烯。在这些情况下使用的引发剂包括芳族酮,诸如苯基-乙醛酸酯、苯基-乙醛酸酯、α-氨基酮、苯偶酰二甲基缩酮、双酰基氧化膦、单酰基氧化膦、二苯甲酮。
用于自由基聚合的光引发剂可以生成反应性化学中间体,诸如在均裂键裂解、夺氢、光电荷转移中出现的那些中间体。磷光体的添加与光反应性物质相容,并且不干扰自由基聚合的基础,其包括基于双光子的过程。
举例来说,双光子可光漂白(photoleachable)光引发剂(诸如双酰基氧化膦)可以吸收给定波长范围(例如430nm以下)的第一光子以分裂成另一种光引发剂类型(诸如单酰基氧化膦),其继而可以使用另一个波长范围(低于415nm)的光子,并且导致更多的自由基物质能够促进高分子量聚合物的形成。
自由基固化的应用包括广泛的应用,其包括涂料、电子材料和粘合剂。本发明中描述的新方法将此种自由基固化的使用扩展到不能以其他方式实现的任何现场应用的范围,并且使得深度穿透引发辐射的施使用成为间接触发固化的能量源。
阳离子交联
阳离子交联使用树脂体系,诸如环氧化物、乙烯基醚、氧杂环丁烷。在这些情况下使用的引发剂包括二芳基碘鎓盐、三芳基锍盐和鎓盐等。此类阳离子交联的应用存在于电子材料、油墨和粘合剂中。这些特殊盐的添加通过质子生成触发固化,这导致阳离子聚合。本发明中描述的磷光体适用于阳离子固化材料及其应用。
作为用光化学引发剂固化的实例,可以将化合物诸如双叠氮化物4,4'-二叠氮二亚苄基丙酮-2,2'-二磺酸二钠盐添加到混合物中。这种化合物在360-370nm的波长下照射时引发交联,这是一种容易获得的波长。另一个实例包括二苯甲酮可用作UV固化应用(诸如油墨)中的光引发剂。
碱催化交联
碱催化交联使用树脂体系,诸如环氧树脂、多元醇/异氰酸酯和迈克尔加成。固化的机制基于路易斯碱发生器。碱催化交联的应用延伸到涂料和粘合剂。
直接X射线固化:
在本发明中,也可以使用X射线能量(使用或不使用磷光体)直接固化。例如,可以添加能够在X射线能量下直接活化的作为有机过氧化物的化学化合物,诸如过氧化甲乙酮(MEKP),以帮助引发聚合。此外,过氧化苯甲酰,是具有两个通过过氧化物连接的苯甲酰基团的过氧化物家族中的另一种化合物,可用于帮助在X射线下引发聚合。磷光体和这些基于过氧化物的化学物质的效果可以是累加的。
共固化
在一些应用中,具有2种粘合剂珠是有用的。一种粘合剂珠填充有具有高有效填充密度的磷光体以及具有较低填充密度的另一种粘合剂珠。在这种情况下,在相同的X射线能量强度下,一种珠子将比另一种珠子更快地固化。在一些阻塞和填充应用中,诸如在RF-ID中,可以施加阻塞,固化它,并且然后填充并固化所述填充物。(参见图9)然而,与填料相比,可以使用本发明中描述的方法通过将更多的引发能量耦合到容纳珠中的能力来共固化所述2种粘合剂珠。这些方法允许同时固化容纳珠和填充材料(共固化)或一个接一个地固化(顺序固化)。相同的基础粘合剂可用于这两种情况(可能是相同的化学制剂),其中所述容纳珠具有与填充材料的转换效率不同的转换效率的磷光体。这可以通过适当选择磷光体或磷光体的含量来容易地完成。在某种程度上,粘合剂珠可以同时有效地固化,但是在相同的X射线束下,看到的UV强度比另一个更强,并且固化比另一个更快。
还在本发明的另一个实施方案中,添加含有适量磷光体的塑料插入模塑件作为待固化材料的一部分。(见图10)作为模塑框架,它在X射线能量下充当UV源。在这种情况下,插入模塑件为阻塞(或周边区域)提供额外的UV能量,并导致更快的固化。这允许材料在边界处更有选择地固化。本实例描述了如图10所述的插入模塑的有用性。
另外,光敏化化学物质可用于增强基于光催化的反应。
溶胶-凝胶涂层特殊磷光体的表面改性。
可以使用各种方法合成微米和纳米粒度的磷光体。各种磷光体也可具有不同的表面化学。一些磷光体在高剂量下可能是吸湿的或有毒的。能够使用吸湿的或可能有毒的磷光体的一种方法是在磷光体颗粒周围形成包含阻挡层。这具有使不同磷光体化学标准化以具有相同的共同表面化学和可预测的行为以及屏蔽阻挡层内部的磷光体的双重益处。溶胶-凝胶衍生的硅酸盐涂层是可以实现这一目的的一种方法。二氧化硅恰好是UV透明的,并且与大多数氧化物和大多数不吸湿的磷光体一致(如磷光体表中所列)。
保护涂层可以是二氧化硅或可以是金刚石或类金刚石碳。可以使用溶胶-凝胶衍生技术形成二氧化硅。金刚石和类金刚石碳可以源自基于氢-甲烷气体混合物的CVD。这些仅是可能的方法的代表性实例。
分散:
磷光体在树脂内部的分散的均匀性非常重要。磷光体在可固化题词内部的均匀分布影响可固化材料的均质性,并因此影响可固化材料的机械和光学特性。混合均匀性和粒度分布根据在引发能量下作为时间的函数的固化程度而对固化体系响应有影响。如果磷光体具有高比密度,则分散的均匀性可以是短暂的,从而导致在树脂中沉降。由于这个原因,可能需要一些表面改性技术来使磷光体保持悬浮。
分散剂
可以出于2个一般目的对磷光体的表面进行改性。一种方法导致将光引发剂拴系或吸附到磷光体的表面上。另一种方法是向磷光体的表面添加分散剂化学物质,以使磷光体在配制粘合剂并将成分混合在一起之后保持悬浮。一般来讲,磷光体优选为粉末形式,其中颗粒之间的聚集最小。磷光体粉末在树脂体系中的分散可以使用各种方法来实现。这些分散方法通过限制或防止在室温下或高于室温20℃至30℃的温度下由颗粒布朗运动引起的潜在再絮凝,使磷光体保持悬浮。这些稍高于室温的温度可用于使用活塞或螺旋泵通过针来分配粘合剂。
为了在混合之后保持均匀分散的磷光体的表面改性是重要的。各种有机聚合物试剂可用于增加磷光体对树脂化学物质的润湿特征。类似地,可以添加各种分散剂以使磷光体颗粒在混合物内部保持悬浮。分散剂由具有高分子量(3000-50000)的聚氨酯或聚丙烯酸酯聚合物结构构成。市场上可购买各种分散剂。分散剂可以借助于表面电荷(带相反电荷的表面的静电吸引力)锚定到无机表面上,并且可以借助于偶极相互作用、氢键和伦敦/范德华力锚定或吸附到有机物质上,像树脂中的链。一旦锚定在适当位置,高分子量分散剂增加颗粒的空间位阻,以使彼此过于接近的颗粒扩散,从而防止磷光体的聚集。
拴系
本发明中使用的下转换颗粒和光引发剂可以作为单独的组分添加到可固化粘合剂制剂中,或者可以彼此拴系以使得在从下转换颗粒发射时活化光引发剂的可能性增加。光引发剂与下转换颗粒的拴系可以通过任何常规化学方法完成,只要它不干扰下转换颗粒的发射特征(除了红色或蓝色方向上的峰值发射的潜在轻微移动)即可,并且只要它不干扰光引发剂引发可固化粘合剂组合物聚合的能力即可。还可以使用两种或更多种磷光体、两种或更多种光引发剂或两者的组合,来实现更复杂的固化动力学。此外,可以使用有机下转换剂,诸如蒽,而不是上文提到的各种无机下转换剂。对于有机下转换器,存在另外的可能性,包括但不限于使用有机下转换剂材料作为可固化粘合剂组合物中的单独组分,如上文对无机下转换剂颗粒所述的将有机下转换剂拴系到光引发剂,或者甚至将有机下转换剂基团引入可固化粘合剂组合物的一种或多种单体组分中。
图61示出了用于将无机下转换剂颗粒拴系到光引发剂的一种合适的化学方法,其中二氧化硅涂覆的磷光体与氨基丙基三乙氧基硅烷(APTES)反应,然后改性的光引发剂与侧链氨基丙基结合。
其他可能的改性包括但不限于以下:
a.通过在光引发剂的敏感性范围内添加从X射线到UV的特殊下转换颗粒来改性现有粘合剂
磷光体的流变性和成本
因为纳米尺寸颗粒的表面积非常高(并因此总表面能非常高),所以随着少量纳米尺寸的粉末的添加,粘度快速上升。这限制了可以添加的填料的量。一方面,这限制了磷光体在X射线能量下可以发射的UV强度。另一方面,由于填料通常比基础树脂和催化剂便宜,因此可获得的有限填料载量在经济上是不利的。此外,随着纳米尺寸颗粒的添加,粘度增加变得过大,这限制了粘合剂在某些应用类别中的使用,而不是其他类别。在大多数粘合剂应用中,在可能的情况下使用微米尺寸的颗粒是有利的。尽管如前所述,最佳模式需要由纳米尺寸颗粒和微米尺寸颗粒的混合物组成的双峰粒度分布。
一般来讲,与磷光体相比,SiO2更具成本效益。这并非总是如此。在保证有利的经济磷光体利用的同时实现足够的UV光输出的一种方法是构建基于SiO2的复合物颗粒作为核心颗粒,并且根据实现目标光催化反应所需的类型和浓度(即,正确的波长输出和光度或强度输出)用适当的磷光体装饰。
构建复合颗粒
在需要使用具有成本效益的下转换剂的微米级颗粒的应用中,由二氧化硅制成的载体颗粒的表面可以用具有纳米粒度的所需磷光体进行装饰。所述磷光体被选择用于在X射线下的正确发射UV波长和强度。
下转换颗粒包含纳米颗粒和硅酸盐载体颗粒的复合物。硅酸盐载体颗粒具有与通常用作填料(包括二氧化硅)的颗粒相同的表面特征。在这种情况下,下转换颗粒粘结到基础载体颗粒的表面,接着涂覆,如图11A和11B所示。
作为说明,由此提供这种复合颗粒的构造。这种描述不包括所有可能性,但提供了一种可行的合成方法。
核心或载体颗粒可以由玻璃(诸如SiO2或碱-硅酸铅)制成,并且具有约2微米的直径。将纳米级下转换颗粒施加到核心颗粒的表面,并且随后使其粘附或粘结到核心颗粒的表面(参见图11B)。能够实现这种粘结过程的一些方法包括从溶液中沉淀的技术。另一种方法是基于通过将下转换颗粒加热到与核心颗粒相比高得多的温度进行冷凝,同时将基于硅酸盐的颗粒保持在其软化点以上。在本领域普通技术人员基于核心颗粒的组成和所选择的下转换颗粒容易确定的正确的相应温度范围下,迫使下转换颗粒与载体颗粒接触,从而导致冷凝,因此允许进行表面沉积。下转换颗粒可以是表中列出的任何磷光体。
量子点和合金衍生物-
例如,下转换颗粒可以是具有从X射线到UV的合适范围的下转换的量子点。用于下转换过程的量子点和/或氧化物还可以包括调整等离子体活性的元素、或者化合物或元素的合金(参见图12)。在一个优选的实施方案中,量子点优选包含硫化锌和硒化锌的混合物,更优选以60%硫化锌、40%硒化锌至70%硫化锌、30%硒化锌的组成范围内的比例。用于等离子体的金属合金包括银/金混合物,更优选在60%银和40%金至70%银和30%金的组成范围内。
在将载体核颗粒用下转换颗粒装饰之后,需要涂覆外层以包封并保护下转换颗粒以及使表面改性。外层涂覆可以使用溶胶-凝胶加工之后进行热处理来完成。这导致形成由表面上具有下转换颗粒的核心颗粒组成的复合颗粒,并且整个涂覆有硅酸盐涂层。(参见图13)。这种特殊的填料颗粒用于代替现有的填充材料。
拴系到复合颗粒
本发明包括通过将光引发剂拴系到具有下转换特性的纳米颗粒来改进使用现有光引发剂的特殊规定。纳米颗粒与光引发剂的这种紧密接近使光引发或光催化的机会最大化,并且可以实现改进的固化效率。(参见图14)。
在栓系的情况下,在使用载体颗粒的拴系的颗粒并混合到粘合剂中来混合粘合剂制剂的过程中加入下转换颗粒。作为一个替代实施方案,拴系的光引发剂和下转换颗粒可定位在微米级载体颗粒的表面上。(参见图15A和15B)。然后将载体颗粒用作填料。这次不需要表面涂层,并且光引发剂与树脂直接接触。(图15A)。或者,这种布置也可以使用SiO2涂层,在其上拴系光引发剂。(图15B)。
由于在此特定实施方案中,将微米尺寸的颗粒(大颗粒)添加到混合物中,使得对粘合剂流变性的影响与添加纳米尺寸的颗粒相比最小化。因此,这种方法可以提供额外的优点,其包括使用微米尺寸的颗粒作为填料以在其他方面改变固化的粘合剂或聚合物特性的能力。
更亮的复合颗粒
通过用2层磷光体装饰载体颗粒,可以得到更亮的颗粒。首先,将载体颗粒用纳米尺寸的磷光体修饰(图16A),然后使用溶胶-凝胶衍生的二氧化硅进行涂覆,并且最后用正确尺寸的磷光体再次装饰(图16B)。可以重复这项技术以在载体颗粒的外层获得更多的磷光体或下转换颗粒。
表面准备:
粘合通过各种因素发展,所述因素包括机械互锁、吸附、静电、扩散、弱边界层、酸碱、化学(共价键合)等。一般来讲,接合区域的表面不规则性和孔隙率越大,接合强度越大。粘合剂的尺寸与被粘物中的间隙的相容性越大,粘结强度就越大。表面的粗糙度可以增加或降低接合强度。
影响接合强度的因素包括:表面能量特性(润湿)、内应力和应力集中、涉及的各种体相和相间的机械响应、几何考虑、施加外应力的模式、破裂或分离模式、粘弹性行为。
粘合剂珠的润湿和凝固对于良好粘结的形成是重要的。粘合剂的扩散系数取决于所涉及的各种表面和相关的表面张力。表面张力在这里被称为能量需求。基材(固体)、粘合剂(液体)和蒸汽(大多数情况下是户外)都起作用。表面的润湿取决于固体与液体之间的表面能、液体至蒸汽的表面张力以及固体至蒸气之间的表面张力。诸如Teflon、PET、尼龙、PE和PS等的基材具有低能量。诸如金属、金属氧化物和陶瓷等基材具有高能量。
可以调整粘合剂化学物质(在本实例中为液体)以调节各种表面的能量需求。但这是不够的。例如,大多数RTV有机硅树脂满足能量需求,但除非使用底漆,否则粘合可忽略不计。通过对待接合的表面进行表面处理,可以使粘合接合更牢固。还可以在被粘物与粘合剂之间形成相间。
出于上述考虑(表面能量需求和底漆处理),许多表面改性技术用于实现在接合处牢固且持久粘合的目标。出于各种原因使用聚合物表面的处理,所述原因包括以下列表中的一个或多个:延伸以使聚合物更易粘合,增加其可印刷性,使其更易润湿,提供包覆层,改进摩擦学性能,可能为金属电镀做准备,提高其阻燃性,提供抗静电特性,控制渗透。
干表面改性包括但不限于通过RF或微波而电离的表面等离子体、火焰、UV、UV敏化、臭氧、UV/臭氧、X射线、激光、电子束、离子轰击以及与其他材料的摩擦。
湿表面改性包括化学反应(诸如氧化、磺化、臭氧化、磷化、铬酸盐转换、胺化、接枝)、选择性蚀刻、耦合层(硅烷)沉积、表面活性剂吸附、光化学化合物、溶剂(表面溶胀)、防止低分子量材料到表面的扩散等。
使用方法
本发明中的典型使用方法的一个实施方案可以总结在图62中。
应用和实例
图中的编号物品清单:
10:各向异性导电聚合物球体
10':各向异性导电聚合物球体–部分平坦化
11:各向异性导电的发射UV或可见光的聚合物球体
11':各向异性导电的发射UV或可见光的聚合物球体–部分平坦化
20:聚合物核心
20':聚合物核心–部分平坦化
22:镍电镀层
22':镍电镀层–部分平坦化
24:金电镀层
24':金电镀层–部分平坦化
26:下转换光子发射体涂层
26':破裂的下转换光子发射体涂层
28:倒装芯片器件
30:基材
32:倒装芯片器件凸块
32':基材焊料凸块
34:基质环氧树脂
35:X射线活化的UV或可见光可固化的各向异性导电粘合剂(ACA)环氧树脂
36:聚合物涂层
36':破裂的聚合物涂层
38:下转换光子发射体
39:晶片对准器和粘结器
40:顶部集成电路(IC)晶片
41:底部集成电路(IC)晶片
42:硅通孔(TSV)触点
44:真空板
46:分割场棱镜和透镜器件
47:固定的透镜对
48:施加的力
49:顶部晶片对准基准
49':底部晶片对准基准
50:X射线暴露器件
51:叠加的对准基准
52:X射线成像检测器
60粘合剂材料
60-1液体包封剂(底部填充)
60-2液体包封剂(非流动底部填充)
60-3液体包封剂(球形顶部)
60-4液体包封剂(阻塞)
60-5液体包封剂(模塑)
60-6导热粘合剂
60-7具有合适的树脂以及合适的磷光体和光引发剂的膜粘合剂
60'用于丝网印刷的具有改进的流变性的粘合剂珠
60”粘合剂圆角
70粘合剂分配器
72基材
72’PCB
72”高密度电路
73UV源
74间隔元件
75计算机控制
76机械驱动
77机械臂
78机械耦接
79台板
79'真空口
79”发热体
80复合基材
81PET组分
82X射线源
100井接合特征部
101凸起件
102PET中的流体通道
102'LCP中的流体通道
130取放装置
131真空
132接触焊盘
132'引线粘结
133金属盖
133'玻璃盖
134柔性电路
140a具有注射模塑特征部的塑料
140b具有镜像注射模塑特征部的塑料
140c粘结的塑料
150具有井的PET塑料
150'液晶聚合物
以下段落中提供了应用的实例以及如何使用这些步骤。一个优选的实施方案涉及将硅集成电路粘结到基材或另一个集成电路(以形成多层堆叠)。X射线的穿透力将使得X射线可以穿过硅的最上层并到达粘结层,其中下转换颗粒将被激发并发射所需波长的光(其可以是UV或可见光,这取决于所用的特定光引发剂)。
任选步骤可以包括但不限于:以允许粘合剂通过毛细管作用在组件下方流动的图案分配粘合剂(例如,“底部填充”过程);使粘合剂光图案化;以及在固化过程之前和/或期间对粘合剂粘结施加压力。
如图62所示,其他应用将涉及以下步骤:
1.(任选)表面准备-表面必须处于其中待形成的粘合剂可粘结到所述表面的状态。这种准备可包括多种不同的方法,其包括但不限于酒精擦拭、等离子体处理、酸或碱处理、物理研磨或粗糙化、提供表面准备的详细概述。
2.将粘合剂施加到基材-可以根据预固化的粘合剂组合物的粘度使用任何所需的方法施加粘合剂。
3.(任选)光学检查所施加的粘合剂的分配质量-这是为了确保粘合剂已经被适当地施加,无论是均匀涂覆、还是以滴或线的形式施加等。此步骤优选地要求粘合剂与施加粘合剂的基材之间存在视觉对比。可以通过向粘合剂中添加一种或多种常规着色剂,或者通过使用在固化时改变颜色的变色粘合剂,来提供这种对比。
4.放置基材用于固化-这确保了待粘附在一起的工件适当地对准。
5.使用X射线固化并进行最终检查
6.(任选)在自动化生产线中提供实时闭环反馈(通过卷到卷或自动化孤岛)这可以在大量生产中更早地检测出缺陷,因此使因工件未对准或不完全固化造成的浪费最小化
导电填料
任选组分可包括各种有机或无机材料和添加剂以执行所需功能,诸如改变固化聚合物的电导率和介电特性。这些组分许多是本领域技术人员众所周知的。
导电填料可包括细分的金属颗粒,所述金属包括金、银、镍、铜以及诸如Au-Pd、Ag-Pd等的合金。可与本发明一起使用的其他导电相包括LaB6以及各种导电氧化物和碳。或者,导电填料颗粒可由其上具有导电涂层(诸如薄金膜)的小聚合物珠或球体制成。聚合物颗粒可以是相当刚性的,或者它们可具有一定程度的柔韧性或可压缩性,以使最终粘结更柔顺。可添加增塑剂和增韧剂,可通过使用装载至超过渗流阈值的体积分数的小颗粒(“小”意指平均直径远小于最终粘结厚度或膜厚度的颗粒),使得所得聚合物复合材料在每个方向上都表现出显著的导电性,来实现各向同性导电性。相反,本发明也可用于各向异性导电材料,其中膜或片材含有装载至低于渗流阈值的体积分数的单层的大单个球形导体颗粒(“大”意指直径与最终粘结厚度或膜厚度相当的颗粒),使得所得材料在整个膜厚度上基本上都是导电的,但是平行于膜平面是不导电的。
其他合适的填充材料包括各种介电材料,诸如金属钛酸盐和锆酸盐、氧化钛等,可添加所述介电材料以调整膜的介电特性。其他无机添加剂可包括氮化硼,用于其中需要具有电绝缘但导热的粘结的应用。
有机添加剂可包括本领域熟悉的若干类试剂。这些包括但不限于:增塑剂,以改变固化聚合物的机械特性;表面活性剂和分散剂,以改变未固化材料的流变性以使其更容易分配并使任何微粒填料充分分散;以及溶剂和共聚单体。
导电聚合物球体
各向异性导电聚合物球体的一个实例一般用图17中的10表示。在本实例中,球体由弹性聚合物核心20和另一个更脆的薄聚合物涂层36的外层组成,弹性聚合物核心20在镀金24下面被薄的镀镍层22包围。如本领域众所周知的,各向异性导电粘合剂(ACA)可由快速(快速固化)热固性环氧树脂制成,所述树脂填充有大约4%的标称直径为5微米的导电聚合物球体。聚合物球体被设计成在压缩时弹性变形,从而暴露外部镀金表面,然后这能够跨越堆叠的IC芯片、晶片或其他基材的对准接触焊盘之间的窄间隙建立电连续性。
当压缩并变形时,聚合物球体20'变得部分平坦化,一般如图18的10'所示。随着直径在压缩下膨胀,脆性外聚合物涂层在顶部接触表面和底部接触表面处出现破裂36',并暴露可延展且部分平坦化的金镀层24'。金镀层仍然借助于镀镍层22'粘附到部分平坦化的聚合物球体20',镀镍层22'也是可延展的并且变得部分平坦化。随着镀金金属在压缩下暴露,它与金属焊盘建立金属到金属的电接触,其中所述金属焊盘直接设置在部分平坦化的聚合物球体的上方和下方。然后通过镀镍层和镀金层围绕每个聚合物球体的圆周跨越顶部焊盘和底部焊盘之间的间隙实现电连续性。此过程在图19中进一步描述和说明。
本发明的方法的第一个基本步骤是将可聚合粘合剂组合物(包括光引发剂和下转换磷光体)与两种或更多种待粘结的组分接触以形成组件。如上所述,如本领域技术人员众所周知的,粘合剂的粘度可通过选择单体、溶剂的可能用途、填料颗粒的载量等在显著范围内发生变化。
本发明的组合物许多是触变性的,使得它们能够使用粘合剂领域中熟悉的标准过程方便地进行分配。具体地,对于微电子组装,可使用自动针式施加器结合取放方法将组合物施加到选定区域。或者,它们可使用通过丝网或掩模的印刷以各种图案进行施加。通常含有溶剂和最少量的无机填料的低粘度体系可通过喷墨印刷以选定的图案进行分布。
为了形成各向异性导电的粘结,本发明的材料可以形成具有适当直径的导电球的片材,切割或切成所需尺寸,并放置在待粘结的两个部件之间。应当理解,在一些情况下,可以重复此过程以便制成任何所需数量的部件的多层堆叠。
本发明的方法的第二个基本步骤是用第一波长处的辐射照射组件,所述第一波长能够通过下转换剂下转换成能够活化光引发剂的第二波长,因此引发粘合剂的聚合。
申请人认为,在一个最优选的实施方案中,在放置粘结材料之后施加到组件的辐射将是X射线。许多工业X射线发生器可从许多供应商处商购获得,并且技术人员可基于常规工程考虑容易地选择适当的X射线源。
导电树脂或粘合剂组合物
可以各种方式使本发明的树脂或粘合剂组合物导电。上文已经讨论了导电填料的使用,并且是将本发明的树脂或粘合剂组合物制成导电或半导电组合物的一种方法。本发明的树脂或粘合剂组合物的一个替代实施方案使用导电聚合物球体作为添加剂来使组合物导电。导电聚合物球体的使用可为组合物提供各向同性或各向异性的导电性,这取决于使用哪种类型的聚合物球体。在使用各向异性聚合物球形添加剂的情况下,通过单独施加压力或施加压力和X射线,可使所得的组合物各向异性导电(即,在一个平面中或沿着一个轴导电,而在垂直平面或轴中不导电)。
在本发明的另一实施方案中,通过适当改性形成树脂或粘合剂组合物的聚合物,可使树脂或粘合剂组合物导电而不需要或不使用任何添加剂。导电聚合物,或更确切地说,本征导电聚合物(ICP)是导电的有机聚合物。此类化合物可具有导电性或者可以是半导体。聚合物的导电性可以多种方式产生,诸如通过聚合物主链延伸缀合,特别是通过沿聚合物主链的各种芳环,并且可以包括所有基于碳的聚合物以及含杂原子的聚合物。合适的导电聚合物可包括任何类型的聚合物,包括但不限于聚(芴)、聚亚苯基、聚芘、聚薁、聚萘、聚(吡咯)(PPY)、聚咔唑、聚吲哚、聚用氮杂聚苯胺(PANI)、聚(噻吩)(PT)、聚(3,4-亚乙基二氧基噻吩)(PEDOT)、聚(对亚苯基硫醚)(PPS)、聚(乙炔)(PAC)、聚(对亚苯基亚乙烯基)(PPV)。在本发明中,即使聚合物不是由能量转换材料发射的能量所触发的引发过程形成的,也可使用所述聚合物的变体,使得低分子量聚合物或低聚物成为有机媒介物的一部分,在施加外部能量(诸如X射线)时,能量转换材料将外部能量转换成活化引发剂的能量,然后其产生引起低分子量聚合物或低聚物的链延长或交联的反应,因此形成最终的导电树脂或粘合剂。
热固性粘合剂:
在表面保持压缩的情况下,使用外部施加的力,热固性环氧树脂快速固化,以便在去除外力之后将导电聚合物球体保持在压缩状态。热固性环氧树脂可借助于适当的热源(诸如筒式加热器、微波或超声发生器、IR加热灯、激光束或各种其他方式)快速固化,以将热量施加到被粘结的表面。然而,热量一般必需相当高(>250℃)以便实现环氧树脂的快速固化,并且通常要求所述热量通过用于实现施加力的表面以及被粘结在一起的芯片和/或基材进行传导。如果电粘结且机械粘结的材料在其特征热膨胀系数(CTE)方面表现出显著差异,则在环氧树脂固化并且材料恢复到室温之后,这些表面之间可能存在高剪切应力状态。这种剪切应力是不需要的,因为它可能导致对准的接触焊盘之间的电连续性的过早失效。当被粘结的材料之间的相对尺寸存在很大差异时,这个问题更加明显。
因此,如果可以在不需要使用高热的情况下固化环氧树脂,则可以实现若干个显著的优点。例如,如果环氧树脂可以在室温下固化,则材料可以在没有任何残余剪切应力的情况下接合,由此改进可靠性。并且如果用于对准零件并在表面之间施加压缩力的固定装置保持在室温下,则组装所需的时间可以大大减少。
UV或光固化的粘合剂:
在室温下快速粘合剂固化的一种可能的解决方案是用紫外线(UV)可固化或可见光可固化的粘合剂代替,用于制造上述ACA粘合剂。关于此主题已经写了一些文献,但是当试图通过微电子组装中常见的光学不透明表面使粘合剂暴露于足够的(固化)UV或光能时,出现了一个基本问题。在没有足够的UV或可见光照射的情况下,环氧树脂可能不会完全聚合。一些制造商试图通过结合环氧树脂内的特性来解决这种情况,这使其能够用紫外能量部分固化,然后进行最终热固化。然而,如果环氧树脂可以完全固化而不需要外部UV或可见光源或额外的热固化步骤,则可以得到用于ACA应用的理想的UV或光固化环氧树脂。
如上所述,存在各种光引发剂化合物和下转换材料,其可以将吸收的较高能量(X射线)光子转换为较低能量的光子(UV或可见光)。如果粘合剂环氧树脂被定制设计成在暴露于一种或多种类型的这些“下转换”低能光子发射体(作为“填料”包括在环氧树脂中)的光谱波长和能级时敏感(即聚合),则即使通过光学不透明材料,环氧树脂也可以通过将其暴露于X射线源而完全固化。另外的益处是可以同时检测相同的X射线能量并将其转换成图像,用于质量控制目的。
X射线活化的UV或可见光可固化的各向异性导电粘合剂(ACA)的实例(35)示于图19中。放大了所述图的特征部以说明集成芯片(IC)如何组装为倒装芯片器件(28)并且与基材(30)电互连。倒装芯片器件的底部表面上的凸块(32)升高到IC芯片的其他平坦表面上方。升高的凸块通常使用电解电镀或无电解电镀方法塑成,并且可以由金属组成,所述金属诸如镍-金、铜-镍-金、钛-钨/铜/镍/金和其他各种金属和/或合金组合。升高的凸块通常在IC的平坦表面上方5-10微米的高度范围内。升高的凸块通常形成在芯片上,同时它们仍然是整个晶片的一部分。然而,基材通常不包括升高的凸块。当以面朝下(倒装芯片)构型组装时,IC上的升高的凸块形成表面之间的间隙的厚度差异。并且当适当地填充足够量和直径的ACA聚合物球体(大约4%的直径5微米的球体)时,很大可能一个或多个球体被捕获在倒装芯片器件凸块与基材焊盘(未示出)之间,并且在施加适当量的外部法向力时部分平坦化(10')。所需的力的“适当”量根据正在组装的可变几何形状和材料通过实验来确定。落在相邻凸块之间的剩余的AC聚合物球体(10)将保持未压缩并且通常不会导电,因为脆性聚合物涂层(36)未被破坏。
在图19所示的实例中,X射线活化的粘合剂(35)也填充有小的下转换光子发射体(38),其被设计成在UV或可见光谱中发射较低能量的光子。这些下转换光子发射体的数量和尺寸也将根据材料特性通过实验来确定。在实施过程中,下转换光子发射体颗粒将小于AC聚合物球体(10或10')并且将均匀地分布在环氧树脂(35)内。
将下转换光子发射体作为单独的“填料”添加可能会不利地影响UV粘合剂的粘度和触变特征。因此,一种替代的且更好的实施过程是用由下转换光子发射体材料组成的涂层(26)代替ACA聚合物球体(10)的聚合物涂层(36),以形成新型的各向异性导电的发射UV的聚合物球体(11),如图20所示。在此实例中,下转换光子发射体涂层本质上是非导电的并且是脆性的,以便在部分平坦化时破裂(26'),并由此暴露下面的金涂层(24'),如图21所示。
图22类似于图19,但示出了没有下转换光子发射体“填料”颗粒(38)的情况和各向异性导电的发射UV的聚合物球体(11和11')的替代,如前所述。这些聚合物球体的尺寸和体积将与现有的ACA粘合剂制剂类似,并且因此有望以类似的方式发挥作用。
使用各向异性导电的发射UV的聚合物球体(11和11')的组件的另一个实例子在图23中示出。此图示出了两个类似的IC晶片,诸如存储芯片晶片,一个堆叠在另一个之上,并且电接合且机械接合在一起。顶部IC晶片(40)和底部IC晶片(41)二者都包括“硅通孔”(TSV)触点(42),其提供一种用于将电路互连从晶片的顶部(有源)表面路由到跨越晶片的底部表面排列的焊盘的装置。以这种方式,存在于晶片顶部(有源)侧的焊盘上的电功能部也可以存在于晶片的相对侧或底部(非有源)表面上;就像通孔连接使信号能够通过印刷线路板(PWB)来路由一样。TSV触点包括在顶部表面和底部表面上的小的升高的环形或方形焊盘,其形成接触表面,用于通过部分平坦化的聚合物球体(11')进行电连接。当晶片被适当地对准和压缩时,X射线活化的UV或可见光可固化的ACA环氧树脂(35)通过将组件暴露于X射线源而固化。
X射线对准器和粘结器描述:
为了在商业上实施上述UV粘合剂粘结技术,认为需要设计设备以安全地提供正确的X射线暴露剂量以便使用相同的X射线能量活化(原位)UV或可见光可固化的粘合剂并同时成像和记录所得的固化粘结线。在图24A-C、25A-C和26A-C中部分地示出了合适的X射线对准器和粘结器的一些实例。
图24A的X射线晶片对准器和粘结器(39)被设计成能够使用X射线活化的UV或可见光可固化的ACA环氧树脂(35)进行晶片到晶片的对准和粘结,而无需向被粘结的晶片表面施加外部热量。所述粘结器包括两个真空板(44),其具有足够尺寸以容纳顶部IC晶片(40)和底部IC晶片(41),所述晶片间隔开足以使分裂场棱镜和透镜器件(46)在表面之间临时插入并扫描,如图所示。棱镜器件用于手动或通过自动装置将晶片表面相对于彼此精确对准,之后将晶片表面压缩在一起。棱镜器件提供了一种从上晶片的底部表面上的多个位置观察并叠加基准图像的装置,其中在下晶片的顶视图上具有类似的基准图像。一旦这些基准图像叠加并精确对准,就移除分裂场棱镜和透镜器件,并在施加的力(48)下将晶片聚在一起,如图24B所示。施加的力压缩并部分地平坦化在两个晶片上的每个IC的对准的倒装芯片器件凸块(32)和/或硅通孔(TSV)触点(42)之间捕获的各向异性导电的聚合物球体(10'或11'),如前所述并如图19、22和23所示。一旦晶片受到足以使ACA聚合物球体部分地平坦化并跨越并置的凸块或触点建立导电性的施加的力,X射线暴露器件(50)和X射线成像器件(52)就会处于适当位置,如图24C所示。X射线暴露器件(50)用于产生高能光子场,其激发下转换球体的荧光涂层,其然后自发地发射具有正确波长和光度的UV光,以使UV树脂通过光引发快速固化。当高能光子穿过材料时,它们还可有利地在X射线成像检测器(52)的表面上被检测到,所述X射线成像检测器(52)直接定位在X射线暴露器件的对面并位于晶片真空板的相对侧。X射线成像检测器被设计成使用不受X射线源损坏的模拟和/或数字电路产生粘结表面的高分辨率X射线图像。收集来自X射线成像检测器的数据并加工成高分辨率的数字图像(作为单张照片和/或连续视频),用于进行数据(归档)存储和/或图像加工,以提供用于过程和质量控制的手段。
图25A-C示出了一种实现晶片到晶片对准的替代技术。在这些图示中,可移动分裂场棱镜和透镜器件(46)由一对固定透镜(47)代替,当晶片分别在透镜对的视场上方或下方移动以定位对准基准(49和49')时,所述一对固定透镜(47)保持静止,所述对准基准设置在顶部和底部IC晶片二者的边缘附近的多个位置处。顶部IC晶片的对准基准(49)与底部IC晶片的对准基准(49')被设计成相互重叠,从而为在x轴、y轴和θ角上的精确对准提供光学参考。当正确对准时,如图25A和25B所示的基准图像(49和49')将被叠加,如图25C的51所示。
在顶部和/或底部IC晶片(40和41)上设置可UV固化的ACA填充的环氧树脂(35)和/或兼容的基质环氧树脂(34)的涂层。在一些应用中,可能需要在具有不同成分和粘度的顶部和底部IC晶片上都施加环氧树脂涂层,以增强粘结过程。例如,底部环氧树脂涂层可在高粘度树脂基质中包含ACA导电球体(10或11),而顶部IC晶片可涂覆有相容性树脂,所述相容性树脂具有较低的粘度并且不包含任何ACA导电性球体。涂层的不同组成和粘度允许减少实现堆叠芯片或晶片之间可靠互连所需的ACA球体的数量,在粘结期间施加压缩力的过程中,可以使单个ACA球体更好地保留在凸块焊盘上所需的位置,并且有助于减少固化的环氧树脂内空隙的形成。
如之前所述,一旦顶部和底部晶片相对于彼此光学对准,则将表面聚在一起并在施加的力下压缩,以使ACA聚合物球体变形并在晶片上的单个IC器件的并置焊盘之间建立电连续性;由此在表面之间建立3D互连。由于待接合的焊盘可能不具有相同的热膨胀系数(CTE)值,因此聚合物球体提供了顺应性的界面,其有助于吸收热循环过程中的膨胀失配,由此保持适当的电连续性。
树脂和光引发剂材料购自BASF。使用具有+/0.1克测量精度的天平以适当的比例对材料进行称重。
将这些材料在实验室环境中与DCA(10,000级洁净室)混合。所有物料处理均在通风橱中进行。实验室用荧光灯源照亮房间,而通风橱用可控的光(没有UV组分)。
用于证明粘结的基材包括玻璃、聚碳酸酯、聚对苯二甲酸乙二酯、聚酰亚胺、纤维素(或纸)、正交层片预浸碳复合物、PEC、ABS、Mylar、本征硅、掺杂硅、基于硅的集成电路。
在一些情况下,将材料以适当的比例混合,然后将它们转移到注射器中,并且随后离心以去除气泡。在其他情况下,将材料放入注射器中但不离心。再又一情况下,将材料封闭在混合杯内部。根据材料的特定密度,观察到高水平或低水平的沉降。
材料制备还包括添加分散剂以试图控制沉淀。在这些情况下,磷光体的表面被改性以能够附接分散剂。然后将材料在加热下在树脂材料和光引发剂内部混合。使用不反应或不污染原材料的不锈钢刮刀将材料手动混合。大多数情况下没有材料污染。用于混合的温度在室温至80℃之间变化。在高温下进行时,混合更好。
原材料源
研究了混合的顺序。各种混合顺序都可能起作用。然而,通过将树脂材料加热至80℃,之后添加光引发剂并混合,可获得制备的一个优选的实施方案。继续进行树脂和光引发剂的混合和加热,直到获得澄清(无气泡)的溶液。轻柔地进行混合以避免剪切树脂和光引发剂。发现加热对这个步骤有重大影响。第三次添加磷光体,之后混合。在这种情况下,继续混合,直到磷光体充分分散在溶液内部,之后添加填充材料。具有微米级粒度分布的磷光体材料是最好的。最后添加填充材料。在最佳模式下,填充材料是Y2O3:Gd纳米颗粒和少量的Aerosil(或活性二氧化硅)。纳米级粒度的填充材料效果最好。值得注意的是,在这种情况下,Y2O3:Gd由5至60nm的颗粒组成,并且Aerosil材料具有类似纤维的形态。还值得注意的是,Y2O3:Gd颗粒会聚集并形成微米级的聚集体。这些聚集体可以提供帮助的解决方案尚不清楚。
最初的目的是,在室温下并且在除了将X射线转换成UV之外没有其他UV光源的情况下,确定适当的UV响应和基材之间的粘合。然而,在荧光室内灯打开的情况下进行原材料的混合。发现在室内荧光灯下经过的时间影响固化程度的结果。从本质上讲,来自室内的UV光有助于光引发化学反应。在不受控制的光下混合经过的时间越长,在X射线能量下实现的固化程度就越大。进行受控的光催化引发以利用这一发现。即用UV光使材料闪烁,之后在X射线下固化。
根据制备过程中的以下顺序通过UV闪烁实现粘合剂材料中的光催化反应的引发。原料仅在受控光下制备。在分配/施加粘合剂之后不久或在分配/施加粘合剂的过程中,使用设定的时间暴露于UV光下进行光催化引发,之后放置顶部基材。然后将夹层部分放置在X射线能量下并进一步固化。经受闪烁的材料比不经受闪烁的材料更快地固化。基于固化硬度,选择的化学物质在少于(7.5分钟)的时间内完成了闪烁,而相同的选择的化学物质在未施加闪烁的情况下花费了更长的时间(12.5分钟)。
在下图26A-C中进一步举例说明了所述闪烁。在这种情况下,使用手持或自动活塞泵分配器70。将粘合剂珠60分配在图26A所示的基材元件72上。在这种情况下,所述基材是聚碳酸酯。然而,可以理解的是,本发明的方法可应用于其他基材材料,其包括复合物和PET等。分配器使用22号针来施加珠子。使用适当规格的活塞泵未观察到磷光体的分离。图26B。底部基材72具有由Kapton制成的并且厚度为90微米的间隔元件74。
使用UV源73从以365nm为中心的UVA范围内施加能量,参见图27。在UVA暴露15秒至25秒之后,将另一个基材元件72”施加在顶部。由此形成的组件被送至X射线系统用于固化。已经认识到,可以根据需要将UV闪烁进行更长的时间;然而,对UV闪烁有实际的限制。
可以将UV光与分配步骤结合(图28)。通过向自动分配器中添加至少一个UV光源并通过添加必要的控制逻辑75,以在粘合剂分配结束时或分配过程中以受控方式(UV强度和UV经过时间)开启UV光,这种UV闪烁很容易扩展到大规模制造。
UV闪烁是一种有效的方法,其可以从具有成本效益的源中促进反应。在闪烁之后并且几乎立即,需要将待接合的基材彼此相对放置。然后将粘合剂珠置于X射线系统内部。X射线能量可以有效地完成在组件的无视线区域内部的粘合剂珠的反应。
使用具有由伺服马达或电缆驱动器组成的机械驱动器的自动分配器,可以高度可重复性实现分配和闪烁粘合剂的能力。在这种情况下,机械手系统配备有机械耦接机构(或关节)78和机械臂77,以使胶粘剂分配针能够以精确的方式放置在大面积上。机械系统还包括基于伺服马达或仅基于电缆驱动器的驱动系统76。
所述系统还可包括台板79,台板79配备有真空口79'和热源79”诸如发热体(参见图29)。真空有助于将基材固定在适当位置。发热体增加基材的温度。稍微升高温度的粘合剂比在室温下更容易流动。粘合剂的粘度通常在升高的温度下降低,直到开始固化,在这种情况下,粘度开始增加。它们的粘度,在特定应用中有益,但对其他应用则无益。一些应用需要通过毛细作用力将粘合剂芯吸到基材下面或进入多孔材料中。
在大多数应用中,通过升高温度来促进粘合。为了避免发生两个基材之间的热膨胀系数失配,可将基材加热到的最高温度应低于其玻璃化转变温度(Tg)。低于Tg时,基材以一种热膨胀系数膨胀,而高于Tg时,基材则以较高的热膨胀系数膨胀。只要温度保持低于Tg,就可以促进粘合。
UV闪烁伴随着外层的固化(或外皮的形成)。所述外层或外皮达到比珠子的内部部分更高的固化程度。在形成这种外皮时,由于硬化的外层阻碍了顶部基材的受控放置,因此珠子变得不实用。通过并置2个基材来形成粘合粘结线变得困难。
在其他实例中,重复上述步骤而没有任何UV闪烁。使得可在通风橱内部的受控光线下制备粘合剂珠,并保持遮挡光暴露,直到我们将粘合剂珠暴露于X射线能量。在这种情况下,粘合剂固化进行了12.5分钟,以达到足够的机械粘结。
所述闪烁对于在以下实例中描述并且在图30A-D中示出的其他应用可能是有益的。可使用丝网印刷机代替粘合剂分配器。基材元件72定位在丝网90下方。丝网开孔90'可定位在基材72上方,但不与之接触。使刀片91以足够的压力通过,以迫使粘合剂穿过丝网开孔。随后移除丝网。将分配的粘合剂60'暴露在UV能量一段受控的时间(15与25秒之间)。然后将顶部基材定位在粘合剂的顶部。可以将夹层的珠子在X射线中固化7.5分钟,并且随后成功粘结2个基材。
在一种情况下,图31A-C中的基材是正交层片碳复合物80。将粘合剂60施加到粘合剂。随后,将由PET 81制成的部件放置在未固化的粘合剂珠上。将由此形成的组件转向并放置在用于固化的X射线源下。在这种情况下,不使用闪烁。粘合剂珠在15分钟内固化。
X射线固化体系可以具有额外的辐射源,即UV。来自UV源73的UV辐射可与来自X射线源82的X射线辐射结合使用。这使得能够固化具有暴露于外界的部分和没有视线的部分的粘合剂珠。在图32中描述了一个实例,其中圆角60”具有直接的视线并且可使用辐射来固化。
圆角60”在倒装芯片应用中起着重要作用,其中IC芯片的拐角处的应力最大。圆角60”的固化可使用适当的配方来完成,以使应力最小化。这意味着使用UV辐射的固化可以在X射线辐射同时、之前或之后进行,无论哪种都使固有应力最小化。
在一些情况下,可能需要分配2种粘合剂珠。分配器70含有粘合剂60,而分配器70”含有粘合剂61。依次分配2种珠子。构思了一种新型粘合剂施加器。如图33A-C所示,新型分配器64具有2个室和2个同轴针。内部容器62含有粘合剂61,而外部容器63含有粘合剂63。此外,新型分配器具有含有针64'和64”的同轴针,粘合剂61和60分别通过所述针64'和64”流动。
使用从简单到更复杂的各种方法将粘合剂施加到基材。以最简单的形式,使用刮刀从混合杯中铲出粘合剂制剂,并将其沉积在一个基材的顶部表面上。在其他情况下,将粘合剂放置在注射器中,并手动按压通过18至22号的针。在其他情况下,材料通过EDF空气活塞泵(也使用18至22号针)的针进行分配。在一些情况下,基材具有夹在基材之间的间隔元件,以防止材料从基材之间被挤压出来。厚度为60微米至1000微米的粘合剂珠证明了所述粘合剂固化。
在一些情况下,这使用聚酰亚胺膜来实现,而在其他情况下,间隔元件是玻璃珠。成功地证明了粘合剂珠的粘合剂厚度的固化在60微米至250微米。这些厚度代表与诸如B级膜和板上芯片应用等的应用相容的粘合剂珠。在其他情况下,粘合剂珠在500微米至1000微米之间。这些厚度代表与诸如气密密封应用等的应用相容的粘合剂珠。
使用填充元件(诸如AEROSIL和掺杂的Y2O3的纳米颗粒)可以实现对粘合剂珠的流变性和厚度的控制。在这些情况下,发现钆是优选的掺杂元素。为了获得500微米及以上的厚度,粘合剂制剂具有0.5%至5%的填料。
在一些情况下,将粘合剂珠施加在2个聚碳酸酯基材之间,并在此构型中保持24小时。未观察到流动或位移。因此,制造了粘合剂珠以在分配后为最终用户提供足够的工作和适用期,并容许制造过程中的工作中断。这是很重要的,因为分配后不需要刮擦正在处理的工作。
制剂 1 2 3 4 5 6
树脂 5 5 5 5 - -
树脂(遮蔽固化) - - - - 5 5
PI(369) 1.3 1.3 1.3 1.3 - -
PI(2959) - - - - 0.5 0.5
LaOB:Tm 1.5 2.5 3.5 2.5 2.5 2.5
Y<sub>2</sub>O<sub>3</sub> - - - 0.3 - -
AEROSIL 0.2 0.2 0.2 0.2 0.2 0.2
CABOSIL - - - - -
MEKP - - - 0 0.1 -
已经发现,配方号2、3和4比其他制剂固化更快。然而,当使用过量的光引发剂时,粘合受到损害。因此,配方4效果最好。它比配方2固化更快,并且比配方3具有更好的粘合。
发现分散的均匀性对于所述过程可能是重要的。分散越均匀,粘合方面的效果就越好。当明显出现大量的磷光体富集区域和/或磷光体贫乏区域时,固化就被定位,并且整个表面积的总体粘合不佳。当光引发剂使混合物饱和(光引发剂的量过多)时,由于未反应的光引发剂在表面上迁移,表面的粘合受到损害。
材料信息。
第一基材板定位在适当位置。记录基材的位置和机械对准。然后将粘合剂施加到第一基材。粘合剂可含有对比剂以分辨第一基材顶部上的珠子图案。在这种情况下,黑色的第一基材不应具有黑色的粘合剂颜色。白色或灰白色的珠子会更合适。像TiO2之类的增白剂可用作对比剂。在这种情况下,基材的颜色是无关紧要的,因为可以使用X射线辐射进行检查,所以不管可见的颜色对比如何,都可以简单地对珠子进行检查。
然后将第二基材定位在粘合剂珠和第一基材的顶部上的适当位置。组件在X射线系统下运输,所述系统将执行基于X射线的步骤(即检查和固化)的组合或由固化组成的一个步骤。X射线系统包括各种元件,其可以自动满足制造要求。图34示出了形成本发明预期的X射线固化系统的这些元件中的一些。
X射线辐射的步骤优选地在外壳83中完成,外壳83阻止辐射泄漏到外界。外壳83可由包括重金属(诸如铅)的各种材料制成。单个组件72'可以保持静止,或者可在固化期间在外壳内部运动。这种运动可以包括可使用转台实现的旋转运动。这种运动还可以包括平移运动,所述平移运动可以使用外部传送带85和内部传送装置85'来实现。内部传送带和外部传送带同步工作,以使零件在X射线外壳中穿梭进出。门84可以打开和关闭以使组件72'在X射线辐射室中穿梭进出。当门打开(或处于向上位置)时,X射线能量关闭以遵守安全措施。X射线外壳可具有自动门,所述自动门具有与控制器76'连接的传感器。外壳可具有向上和向下打开的门,以使至少一个组件在X射线外壳中穿梭进出进行辐射,从而导致固化。此外,可将待固化的组件定位在加工固定装置86内部。所述加工固定装置携带有组件72'。
X射线机器内部可放置多于一个组件。可改变具有多个组件的构型以使X射线固化系统内部零件的载量最大化。如图35A和35B所示,将2个传送装置一个接一个地并置,以增加X射线系统内部的平面内的填充系数(组件的数量)。由于渗透深度在正确的水平,因此可将传送装置设置在X射线固化系统内部的平面内(图35A)以及跨越X射线固化系统内部的平面(图35B)。
X射线固化的另一个优点在于,它能够使用相同的固化参数固化驻留在不同产品中的各种尺寸的粘合剂珠。作为一个替代实施方案,X射线机器可具有多于一个源,从而允许同时固化不同的组件(参见图36)。这表现出优点,并使制造商能够在X射线固化系统内部固化不同的产品混合物。组件160和160'可同时进行固化。这意味着产品更换位置更容易,并且系统可以灵活地满足固化要求。
可完成具有设计配方能力的X射线系统,包括每秒最多30次脉冲。可对kvp以及安培数进行一定程度的控制,以控制输出功率以及光子能量,这继而又意味着对穿透深度的控制。
另外,固化时间和效率可根据需要通过调节各种参数进行调节,所述参数包括但不限于温度、辐射源强度、辐射源距待固化的粘合剂组合物的距离以及由辐射源产生的光子通量。
X射线递送头在组件的一侧上,或者在粘合珠上方或者在粘合珠下方,这可描述(尽管不精确)粘合剂珠通常垂直于传播方向。在一些情况下,粘合剂珠一般平行于X射线辐射路径。然而,已经认识到,X射线辐射以泛光束形式发射,所述泛光束具有围绕一个主要传播方向的多个方向。
金属和金属涂层限制X射线辐射的穿透。因此,当固化具有金属迹线和涂层的集成电路时,需要适当地调整X射线的取向。在这些情况下,珠子的优选取向平行于X射线的传播方向。如图37A-C所示,两种构型都是可能的。在一种情况图37A中,组件垂直取向以实现优选的取向,在另一种情况图37B中,将X射线源安装在适当的取向上,以实现珠子和传播方向之间所需的对准。图37C提供了组件160与X射线之间的对准的不同视图。
晶片粘结
晶片对准完成后(使用图24A和24B中所述的方法),使用夹持固定装置88将晶片夹持在一起。夹持固定装置使晶片在运输过程中保持对准。夹持固定装置在晶片背面上与晶片接触,其中深度通常在晶片的排除区内。如图38A和图38B所示,晶片可通过旋转臂87放置在旋转台89上。旋转台能够承受高达40kN的压力。可以使用2个镜像旋转台施加压力。一旦两个旋转台已经接合,就可将夹持固定装置88去除。
由于X射线固化是在室温下进行的,或者是在用于粘结的聚合物的玻璃化转变温度以下进行的,因此在将晶片彼此叠置之后,不需要太多压力。类似地,在将管芯放置在晶片表面上时,不需要太多压力。
晶片上的管芯应用可以使用图39中描述的相同晶片设置。然而,在晶片上的管芯粘结应用中,X射线以一定角度对准,这导致对设置在底部晶片41顶部的IC 40'的面积阵列的穿透深度更大。在这种情况下,粘结线的平面对于X射线的传播方向成45度角。
X射线系统的安全设计(参见图40A-C)
洁净室的非接触式设计(参见图41-42)
可升高和降低以门控进入加工室的组件160的容器。可升高腔90'的一部分以使得组件160能够分批。
室120固定在适当位置。可升高和降低所述室的腔的底部122以使得能够定位进入加工站的晶片41。可移动底部不接触上部加工室(120与122之间没有接触)。
复合物上的粘接紧固件(参见图43A-B)
复合板80分配有粘合剂60。使用气动驱动的取放系统(112)将金属紧固件110放置在基材80的顶部上。取放装置112和粘合剂分配器111二者均安装在KUKA机械手113上。X射线源82以小角度放置以耦接到螺栓110的底部。
更具体的应用:
以下附图示出了半导体中与包装和包封有关的各种应用。这些包括:球形顶部、阻塞和填充、模塑(PMC、插入模塑)和倒装芯片底部填充。
倒装芯片下方的底部填充:
IC 28以使得凸块32与电焊盘132电接触的方式被焊接在适当位置。所需的粘合剂60-1通过分配系统70来施加(参见图44)。如果将基材加热到高于室温20℃,则由于芯片与基材72之间的毛细作用力,粘合剂会在芯片下方芯吸。一旦粘合剂在IC下方分配并芯吸,就可以固化粘合剂,并且可在固化之前进行检查。标准方法是使用光学手段检查粘合剂。然而,由于粘合剂60-1装载有在X射线体系中具有吸收特征的磷光体,因此可使用X射线进行检查。使用X射线检查可显露IC 28下可能存在的任何条纹。可确定粘合剂的均匀性,以查看粘合剂是否已分为树脂富集区或树脂贫乏区。粘合剂可随后用X射线进行固化。
在这种情况下,固化可在室温下完成,并且最好从IC的侧面耦合X射线。在这种情况下,传播方向平行于粘合剂珠的平面。
高密度电路的底部填充
如果基材是高密度电路(72”),则可以应用类似的过程。一旦组件形成之后,就可使用焊料凸块(32')将所述组件放置在PC或服务器的主板上。这个过程类似于用于安装逻辑组件(例如,微处理器和高密度互连器件)的过程。图45示出了各种元件。
非流动底部填充:
为了避免粘合剂芯吸过程中以及将IC(28)连接到基材(72')上的焊接过程中发生的时间延迟的组合,可以在接触焊盘(132)的面积阵列上方在基材(72')的顶部分配包封剂(60-2)。参见图46。进行光学检查。使用具有真空(131)的可编程“取放装置”(130)来拾取芯片。在将芯片放置到PCB(72')上之前,以使得IC凸块(32)进入与PCB电焊盘(132)的电接触的方式进行主动对准。可以使用X射线检查并固化非流动的粘合剂。
球形顶部应用:
球形顶部应用包括将电聚合物分配IC(28)的顶部上,IC(28)的顶部已管芯连接到PCB(72')上并且引线粘结以在IC(28)的有源区域与设置在PCB板(72')上的电焊盘(132)之间建立电接触,参见图47。可以将含有适当磷光体和光引发剂的特殊粘合剂(60-3)施加到IC(28),并留出足够的时间使电聚合物流动并覆盖IC(28)和引线粘结(132’)。然后将组件使用X射线辐射进行检查,并使用X射线辐射处理或配方进行固化。X射线处理可包括可控持续时间的脉冲,所述脉冲适合于硬化粘合剂而不会对组件造成任何损坏。
阻塞和填充
在一些应用中,有利的是,在分配包含X射线固化所需的适当的磷光体和光引发剂的包封剂(60-1)之前,施加阻塞(60-4)或第一粘合珠并随后固化所述第一珠。当前技术允许使用X射线辐射共固化60-1和60-4二者。参见图48。在制剂60-4中装载的磷光体的量可特意较高,以比60-1更快地固化。
模塑/模塑后固化
施加包封的另一种标准化方法是通过注射模塑。树脂在模具水平进行施加。在这种情况下,IC(28)附接到基材(72”),并且然后插入模具中。然后将模具在高压下夹紧,并在高压下注入高温下的液态树脂,以填充引线粘结(132')与IC(28)之间的空间,参见图49。然后注射模塑步骤伴随着延长的热处理。通过使用包含适当的磷光体和光引发剂的低粘度树脂(60-5)能够实现本发明。在进行低温注射模塑之后,可进行X射线检查和X射线固化。使用本发明的益处是多种多样的,但是最明显的益处是释放可在模塑后建立的所有应力。这消除了应力释放所需的大多数热退火步骤。这些应力释放步骤最多可能需要4个小时,这会增加在制品的数量,并且不会带来有利的经济效益。
MEMS和微处理器的盖子密封
与半导体和MEMS有关的另一个应用是盖子密封,参见图50A和50B。在这种应用中,可使用三种不同的粘合剂。可使用3种不同的粘合剂的组合:1-粘合剂珠(60)、2-底部填充粘合剂(60-1)和3-导热粘合剂(60-6),它们将IC 28与盖子133连接起来。对于半导体,盖子133通常是金属的。对于MEMS应用,盖子133'可能是玻璃。
微BGA填充包封
可以与关于球形顶部包封所述的方式相同的方式来包封微球栅阵列。组件的构型与板上芯片应用不同,但是引线粘结132'的包封保持不变。(参见图51)具有适当粘度的适当包封剂60-3被制备成包含一定量的光引发剂和磷光体以在X射线下固化。
Tab粘结
卷带式自动粘结(TAB)技术可以通过当前应用来增强。TAB用于使柔性电路134与半导体IC(28)电连接,参见图52。柔性电路含有电焊盘132。包封剂60-3可设置在TAB区域上。然后在施加密封剂,之后进行X射线检查和固化。
微流体
具有镜像特征部的塑料零件140-a与塑料零件140-b的接合可用于构建功能性塑料容器,其容纳流体并且具有可将流体从容器的一侧引导到另一侧的可用流体通道。使用膜胶粘剂60-7将2个具有可匹配特征部的塑料工件接合在一起,以形成工件140c(示出横截面图)。膜60-7具有适当的树脂以及适当的磷光体和光引发剂。形成的塑料壳体作为零件140d示出(顶视图)。参见图53。
可使用多个塑料工件形成流体通道。PET塑料的横截面以150示出。PET具有井接合部,如沟槽100所示。流体通道102'与另一个塑料(诸如液晶聚合物150')上的流体通道102对准。由此形成的子组件继而可用于形成流体器件。提供了此类子组件的实例。所述子组件的每个零件都可具有导管和互锁特征部,以允许开孔对齐。分配粘合剂珠60-3,并使用X射线使其固化。参见图54A和54B。
子组件可控地折叠。凸起特征部101进入井接合部100。这些特征使得能够获得气密密封件,因为流体(气体的液体)必须行进通过在将凸起特征部101啮合在井接合部100内部时形成的分裂井。行进距离增加,并且气密密封件增强。
又一实例包括柔性电路134具有接触焊盘132的情况。使用粘合剂60-3将柔性电路134与IC 150TAB粘结。IC 150具有电阻加热网络,其可增加流体通道或开孔102周围的温度。流体通道102与存在于塑料零件145-d上的开孔或流体通道102'对准。使用粘合剂60来粘结IC 150。流体通道102'与流体贮存器152连接。这些贮存器可含有油墨或胰岛素。参见图55A和55B。当将柔性电路组件围绕壳体145-d缠绕时,粘合剂膜60-7被活化以将145d的外壁与柔性电路134粘结。
塑料接合不必使用镜像塑料,也不必使用类似的材料。事实上,可使用异质材料来形成用于胰岛素泵或喷墨容器的塑料壳体。
喷墨墨盒的形成
喷墨墨盒通常由塑料壳体制成,所述塑料壳体由作为基础材料的热塑性可模塑树脂制成,诸如聚对苯二甲酸乙二酯(PET)、聚乙烯或聚砜。聚砜描述了具有韧性、机械稳定性和抗墨性的热塑性聚合物家族。
通常,由硅制成的打印头具有用作油墨出口的许多喷嘴。硅上的喷嘴阵列和油墨贮存器通过具有流体通道的歧管结构进行连接。使用流体通道将不同颜色的油墨从主贮存器引导到适当的打印头喷嘴阵列。
多色墨盒具有多个油墨容器,通常是三个油墨贮存器。在此类三个墨盒中,每个贮存器都含有原色。这些贮存器需要彼此隔离。隔室之间的隔离必须是气密的,以避免油墨在各个隔室之间混合。以粘合的方式粘结塑料工件以密封分开的贮存器。
密封或分隔各个贮存器的目标接合部必须被制成能够耐受长时间与油墨的接触。从化学角度来看,油墨恰好具有侵蚀性。此外,密封接合部必须能够克服产品功能性寿命内可能存在的机械应力以及需要在大气压力与贮存器内部压力之间进行调节的压差。
油墨贮存器和油墨通道、形成多色墨盒所需的塑料结构和歧管可以由多个注射模塑的塑料零件组装而成。最经济的方法是将所有这些零件中的一部分注射模塑。然而,盖子密封件和三室分隔件不能被注射模塑为单一主体,因为需要它接近贮存器。无论墨盒是由三个工件还是多于三个工件形成的,通常使用两种加工方法来粘结塑料:超声能量焊接和热固化粘合剂。
超声焊接的问题在于它不适用于异质材料。另一种方法包括使用粘合剂材料将各个零件粘结在一起。在这种情况下,各个塑料零件可具有类似材料或异质的材料,条件是粘合剂经受足够的热能。
固化粘合剂所需的热能的施加导致塑料零件的热膨胀。不同材料之间的热膨胀失配导致锁定在各种材料的界面处的热感应应力。
使用TAB粘结方法将打印头连接到柔性电路。打印头静置在粘合剂珠上,所述粘合剂珠将打印头粘结到包含流体通道的歧管。打印头包含可由电信号激发的喷嘴,所述电信号馈送硅上建立的电阻网络。选择性地施加到特定喷嘴的电信号导致选定喷嘴的加热,并因此导致可控的墨滴喷射或喷处出。墨滴被引导到像纸一样的打印介质以形成导致文字、图像等的图案。
本发明的粘合剂组合物可用于形成喷墨墨盒(诸如上文所述的喷墨墨盒)或用于形成根据常规技术的喷墨墨盒,例如像美国专利7,832,839;美国专利7,547,098;或US 7,815,300,每个专利的内容以引用的方式并入本文。
泄漏的光纤元件:
纤维元件91可以是直的,或者可以是柔性的以采用各种形状。纤维元件将UV能量泄漏到其核心周围并沿着UV光的传播方向泄漏。当光从其末端耦合时,光沿着纤维传播,并将UV光泄漏到其环境中。(参见图56A和56B)
纤维元件插入2个塑料之间的接合部中。将粘合剂分配到纤维周围,并将组件折叠在一起。因此,可通过将UV耦合到纤维元件的外侧以将UV光分布到组件的内部来实现固化。(参见图57A和57B)
数码印刷机用UV油墨
CaWO4磷光体和CaWO4:Pb在X射线能量下在可见光和UVA中发射。这两种磷光体的衰减时间都非常慢。即使引发能量已经停止,这种磷光体仍继续发射可见光和UV光。X射线能量辐射停止之后,发射保持60至100秒的强度。
因此,CaWO4以及CaWO4:Pb可用于延迟固化应用,诸如UV油墨。UV油墨提供了在UV光下快速固化的可能性。特别优选包含具有从X射线和极端UV到所需的UVA和可见光范围的光调制能力的纳米粒度的磷光体。引发辐射可以使油墨闪烁(短脉冲曝光),并且所包含的具有延迟的衰减时间的磷光体可以持续发射可固化油墨的UV辐射。
这些特殊油墨可用于配备EUV或X射线源的数字印刷机中,以用缓慢的衰减时间快速活化磷光体。因此,借助于可持续的UV辐射,可以将卷筒纸馈送速度从每分钟400英尺提高到每分钟900英尺以上,这可以继续在油墨本身厚度范围内进行油墨固化。
这在使用光面纸时特别有用。光面纸提供有限的孔隙率,如果有的话。因此,润湿表面的油墨会保持湿润形式,并且不会很快变干。可将热能传递到卷筒纸的表面,以帮助除去油墨中使用的溶剂。溶剂的干燥速度慢,并且不能轻易除去,这会降低卷筒纸速度。
热能和引发辐射的组合可用于本发明。
光面纸的卷轴(200)馈送图58中所述的数字印刷机的一部分。通过油墨分配站(201)向纸张施加油墨。引发辐射源(202)用X射线或EUV使油墨闪烁。用X射线或EUV活化嵌入在油墨中并具有缓慢的衰减时间的磷光体。纸移动到热站(203)。然后纸围绕第一滑轮(204)和第二滑轮(204)转动。现在,纸张的背面已准备好使用油墨分配站(201)进行打印。使用站203和202对油墨施加热处理以及UV闪烁。然后将纸张移动到数字印刷机的另一个部分。
各种其他实施方案也是可以的。
复合物:
本发明的粘合剂也可用于通过两个或更多个层片的粘合形成复合物,所述层片是层状复合物的基本构件。可以通过将层片分层来构建复合物,其中所述层片使用本发明的粘合剂组合物彼此粘附。可以制备任何常规层片,诸如-45+45组件(参见图59A和B)、0+90复合物(参见图60A和B)。
优选通过制备由多个层片形成的预浸材料来形成复合物,其中每个层片相对于其他层片以所需的构型放置,并且在所述层片的各个层之间具有本发明的可固化粘合剂组合物。一旦预浸材料组装好并且所述层根据需要对准后,就可以通过施加所需的电离辐射(诸如X射线)来固化可固化粘合剂,由此将片层粘附在一起以形成复合物。
前端半导体光刻
本发明的粘合剂组合物可以可替代地在光刻中用作可固化树脂,以实现负性或正性光刻胶显影。通过使用重金属掩膜元件,可以使本发明的组合物得以选择性固化,以形成苏偶像的图案或半导体元件。如果需要元件导电,则粘合剂组合物可以根据需要掺杂有导电填料。
半导体集成电路(IC)
在半导体集成电路(IC)器件的生产中,通常通过使用附接到IC器件的焊接球将IC器件导电地附接到基材,然后将焊接球放置在附接到基材的导电焊盘上。图63A-G提供了本发明的粘合剂和导电树脂组合物的一种用途的图示,所述粘合剂和导电树脂组合物以代替此类焊接球和焊接掩模的使用同时保持IC器件与电焊盘之间的高导电性的方式使用。在图63A中,半导体IC(300)(诸如存在于逻辑或存储器件、片上系统或光电器件,特别是基于GaInNA或GaA的器件中的半导体IC)具有附接在半导体IC(300)的一侧的多个“凸块”、“引脚”或“脚”,在其他地方称为凸起(301),其中所述凸起(301)由导电可固化树脂形成,优选包含金属银薄片和本发明的能量转换剂的导电可固化树脂,最优选包含金属银薄片和本发明的能量转换剂的导电可固化环氧树脂。物品中的术语凸起(301)包括但不限于上述物品32:倒装芯片器件凸块,和32':基材焊料凸块。可通过任何所需的方法将多个凸起(301)施加到半导体IC(300)。优选地,凸起(301)可通过喷射、丝网印刷、电镀或其他分配方式来施加,以便将凸起(301)放置在特定器件所需的位置。凸起(301)可遵循所需的图案,提及两个实例,诸如面积阵列或外围阵列构造。
然后将具有凸起(301)的半导体IC(300)对准(图63B),并以对应于半导体IC(300)上的凸起(301)的位置的图案将其放置在具有多个导电焊盘(303)的基材(302)上(图63C)。一旦放置完成,就通过施加X射线或电子束能量通过半导体IC器件(300)(图63D)(或者通过基板(302)(未示出)),将导电树脂凸起(301)固化在适当位置,导电树脂凸起(301)中的能量转换剂由此将X射线或电子束能量转换成引发能量,从而引起导电树脂固化并硬化。在这种构造中,基材(302)可包含导电的迹线,以便提供通过电焊盘(303)的所需的电连接,或者基材(302)可以是不导电的。基材302可以是柔性或刚性电路板。此外,刚性电路板可以是有机的,诸如FR4和BT,或者可以是陶瓷的,诸如氧化铝(Al2O3)或掺杂的氧化铝。电路板可以是多层电路板,其包含至少两个分层的通孔,以互连内部平面,诸如电源平面或接地平面。如果基材(302)是不导电的,则电焊盘(303)可通过从电焊盘(303)到电焊盘(303)的图案化电连接进行连接,如果需要的话。这将由准备的特定半导体IC组件来确定,并且本领域的普通技术人员很容易确定。使用本发明的可固化树脂/粘合剂组合物提供的一个优点是能够通过使用常规光刻和类似技术来产生精细控制和复杂的导电图案,而无需视线接入来固化所涉及的树脂。或者,可将凸起(301)放置在基材(302)上,并且随后将IC(300)对准并放置在基材(302)的顶部。又一替代方案是,可将凸起(301)设置在IC(300)和基材(302)二者上,然后在将IC(300)和基材(302)对准并放置在一起之后,在凸起固化的过程中将其接合。
一旦导电树脂已经固化,就通过分配器(350)施加可固化底部填充粘合剂(304),其中所述可固化底部填充粘合剂(304)是根据本发明的粘合剂,其包含一种或多种能量转换剂(参见图63E)。优选地,底部填充粘合剂组合物是不导电的(或电绝缘的组合物),以隔离由凸起(301)和电焊盘(303)形成的导电路径。一旦分配,就通过施加X射线或电子束能量通过半导体IC器件(300)(图63F)(或者通过基材(302),未示出)来固化可固化底部填充粘合剂(304)。
当需要金属散热器时,将金属散热层(306)施加到半导体IC器件(300)的与凸起(301)、电焊盘(303)、底部填充层(304)和基材(302)相反的一侧。优选地,如图63G所示,金属散热层(306)通过中间可固化导热粘合剂层(305)附接到半导体IC器件(300)。一旦将金属散热层(306)对准并放置在可固化导热粘合剂层(305)上,就通过施加X射线或电子束能量通过金属散热层(306)或通过下面的半导体(300)-凸起(301)-基材(302)组件来固化可固化导热粘合剂层(305)。或者,可从器件的侧面施加X射线能量(或电子束能量)(如图37C、38A和38B所示)。也可以设想一种组合方法,由此从所有侧面照射器件。
本发明的可固化粘合剂或树脂的导热性可通过在树脂中装载金属颗粒(其固有地导热和导电)来增强。或者,树脂可掺杂有金属氮化物,诸如AlN(氮化铝)和BN(氮化硼),用于增加热导性而不必增加导电性。
此外,通过使用诸如石墨烯或其他导电碳材料等的材料,树脂的导电性可比导热性增加得更多。
举例来说,本发明的包含X射线至UV能量转换颗粒的可固化树脂可掺杂有银、铜或石墨烯(作为导电材料)并使用X射线能量来固化。金属颗粒产生大量的二次电子,其也有助于树脂的固化循环。这与直觉相反,因为UV树脂正常需要UV透明/透光才能被UV光固化。对于本发明的可固化树脂不是这种情况,其仅需要被X射线能量穿透。UV光在粘合剂珠内部深处产生,并且金属(或碳)颗粒产生二次电子,从而能够实现/增强自由基固化机制的进行。
本发明的树脂或粘合剂的导热性和导电性也可通过使其掺杂有金属颗粒和薄片(特别是Ag)来提高。类似地,可通过使用颗粒或片状形式的高导热性掺杂剂来提高导热性,所述掺杂剂诸如金属氮化物,诸如AlN或BN。
作为图63G的独立金属散热器(306)的替代方案,还可以将半导体(300)-凸起(301)-基材(302)组件密封在由金属散热层(307)形成的具有支撑侧(308)的腔内部(参见图64),其中所述金属散热层(307)通过相同类型的导热粘合剂树脂(305)附接,但是在本实施档案中,所述金属散热层(307)延伸超出半导体(300)-凸起(301)-基材(302)组件的边缘并在其端部由支撑侧(308)支撑。当这些支撑侧(308)完全包围半导体(300)-凸起(301)-基材(302)组件时,半导体(300)-凸起(301)-基材(302)组件被气密密封,并具有在其边缘与支撑侧(308)的内表面之间的腔。与独立金属散热器(306)一样,本实施方案的金属散热层(307)通过导热粘合剂树脂(305)连接到半导体(300)-凸起(301)-基材(302)组件,在金属散热层(307)被对准并放置在适当位置之后,通过施加X射线或电子束能量通过金属散热层(307)来固化所述导热粘合剂树脂(305)。所得的组件是包装的IC产品或器件。
在图64的气密密封组件的另一实施方案,图65示出了类似的构造,不同的是金属散热层(307)在半导体(300)-凸起(301)-基材(302)组件正上方的部分被对给定波长的光透明的窗口(309)代替,以使半导体(300)-凸起(301)-基材(302)组件内的IC能够接收和/或传输所需的波长。此类IC可以是发光二极管、垂直电容表面发射激光器(VCSEL)或边缘发射半导体激光器。在后者的情况下,一个或多个支撑侧(308)可以由合适的窗口(310)代替(而不是在金属散热层(307)中具有窗口(309)(未显示),或除了金属散热层(307)中的窗口(309)(图66所示)之外),所述窗口(310)对由边缘发射半导体激光器发射或接收的所需波长是透明的。
或者,可将半导体(300)-凸起(301)-基材(302)组件(具有或不具有底部填充层(304))包封在球形顶部(311)内,优选具有高透光率的球形顶部,如图67所示。球形顶部(311)可由直接UV固化的粘合剂或树脂组合物、热固化的粘合剂或树脂组合物形成,或者由其中包含具有一种或多种能量转换材料的本发明的粘合剂或树脂组合物形成,以允许X射线或电子束固化球形顶部(311)。在本发明的粘合剂或树脂组合物用于此类构造中的情况下,由于球形顶部(311)理想地具有高透光率,因此优选使包含在可固化粘合剂或树脂中的能量转换材料具有小于通过树脂传输所需波长的光的粒度。最优选地,这些能量转换材料将具有400nm或更小的粒度,以便保持球形顶部(311)所需的透光率。球形顶部树脂具有X射线吸收性,并且可通过仔细选择能量转换剂的尺寸使其光学透明。
除了上述器件实施方案之外,制造如上所述的这些器件的方法也包括在本发明内。这些方法的特定优点在于,各种类型的可固化树脂/粘合剂组合物的X射线或电子束固化可在室温下进行,以便避免与形成各种部件的材料的热膨胀系数不同相关的问题,并且在使用热固化时避免对所涉及的半导体IC中存在的通常精密且复杂的电路的潜在热损伤。
本领域的普通技术人员将容易理解,本文所述的这些实施方案中的任一个都可以根据需要以各种排列进行组合。此类排列中的每一个同样包括在本发明的范围内。
虽然许多上述实施方案使用分散在整个可固化粘合剂组合物中的下转换颗粒,但是许多其他构造可用于与本发明一起使用。例如,可将下转换颗粒粘附到薄膜(优选粘附到薄膜的两侧),所述薄膜可放置在两个表面之间,每个表面均涂覆有可固化粘合剂单体和光引发剂制剂。一旦照射,下转换颗粒就发射所需波长的能量,从而活化光引发剂,并引发两层粘合剂的固化,因此将每个表面粘结到具有下转换颗粒的薄膜的相反侧。普通技术人员在回顾本发明时将容易地理解可用于创建新型粘附结构的多种构型。
实施例
总体上已经描述了本发明,可通过参考某些具体实施例来获得进一步的理解,除非另外指明,否则本文提供的具体实施例仅出于说明的目的,并且不旨在进行限制。
通过首先称重关键化学成分并在加热下混合这些化学成分来制备材料化学物质。官能化的丙烯酸酯树脂购自BASF。所述树脂由4种可商购获得的产品的混合物制成,其包括Laromer LR 9023、Laromer PO 94F、Laromer TPGDA、Laromer LR 9004。
所述光引发剂也购自BASF,并且由IRGACURE 369和IRGACURE 2529组成。所述磷光体购自Phosphor Technologies。The LaOBr:Tb3+磷光体以及YTaO4用于制备固化制剂。第三磷光体是掺杂有钆的Y2O3(Y2O3:Gd)。这种第三磷光体以纳米粒度合成。它既用作磷光体又用作增稠剂。
在所有混合步骤过程中使用的温度为80℃。各种化学物质的添加顺序如下:1-树脂、2-光引发剂、3-磷光体和4-增稠剂。在一种情况下,所述增稠剂是Y2O3:Gd。每10分钟将混合物搅拌一小时至两小时。这确保获得均匀的混合物。
在一种情况下,将MEKP添加到粘合剂制剂中,以评估X射线固化在将能量耦合到MEKP以及增强固化动力学方面的有效性。
已经发现,配方或制剂号2、3和4比其他制剂固化更快。然而,当使用过量的光引发剂时,粘合受到损害。因此,配方4效果最好。它比配方2固化更快,并且比配方3具有更好的粘合。
发现分散的均匀性对于所述过程是至关重要的。分散越均匀,粘合方面的效果就越好。当明显出现大量的磷光体富集区域和/或磷光体贫乏区域时,固化就被定位,并且整个表面积的总体粘合不佳。当光引发剂使混合物饱和(光引发剂的量过多)时,由于未反应的光引发剂在表面上迁移,表面的粘合受到损害。
在PET、玻璃、聚碳酸酯、聚酰亚胺、聚砜、碳预浸料、FR4PCB上完成各种制剂的固化。将粘合剂珠夹在两个类似的基材之间,并在所述基材之间进行固化。在X射线中,温度没有增加。使用手持式IR温度计测量温度。仅在制剂含有MEKP的情况下,才观察到高达10℃的明显温度增加。
制剂 1 2 3 4 5 6
树脂 5 5 5 5 - -
树脂(遮蔽固化) - - - - 5 5
IRGACURE(369) 1.3 1.3 1.3 1.3 - -
IRGACURE(2959) - - - - 0.5 0.5
LaOBr:Tb 1.5 2.5 3.5 2.5 2.5 2.5
Y<sub>2</sub>O<sub>3</sub> - - - 0.3 - -
AEROSIL 0.2 0.2 0.2 0.2 0.2 0.2
CABOSIL - - - - -
MEKP - - - 0 0.1 -
固化另外的制剂。在X射线下的经过时间为10分钟、12.5分钟、15分钟、17.5分钟和20分钟。使用LaOBr:Tb3+磷光体制成的制剂在10分钟与12.5分钟之间固化。使用磷光体YTaO4制成的制剂在12.5分钟与15分钟之间固化。使用第三磷光体即掺杂有钆的Y2O3(Y2O3:Gd)的制剂在17.5分钟内固化。但是,在将与Y2O3:Gd混合的LaOBr:Tb3+添加到粘合剂制剂中时,固化在10分钟内完成。
制剂 1 2 3 4 5 6
树脂1 6 6 6 6 6 6
树脂2(遮蔽固化) 0 0 0 0 0 0
PI(369) 0.6 0.6 0.6 0.6 0.6 0.6
LaOBr:Tb 1.5 1.5
Y<sub>2</sub>O<sub>3</sub>-Ian 1.5 1.5
YTaO<sub>4</sub> 1.5 1.5
AEROSIL 0.3 0.3 0.3 0.3 0.3 0.3
显然,根据以上教导可以对本发明进行另外的修改和变化。因此,应当理解,在所附权利要求的范围内,本发明可按不同于本文具体描述的方式来实践。

Claims (27)

1.一种电子部件,其包括:
附接到基材的半导体器件,
其中所述半导体器件通过附接到所述半导体器件的一侧的多个刚性凸起而附接到所述基材,所述多个刚性凸起被配置成与位于所述基材上的多个电焊盘电接触;
其中所述多个刚性凸起由包含以下的第一可固化树脂或粘合剂组合物形成:
包含至少一种可聚合单体的有机媒介物;
至少一种响应于选定波长的光的光引发剂;以及
至少一种能量转换材料,其被选择成在暴露于选定的赋予辐射时发射所述波长的光;
使得在施加所述选定的赋予辐射时,所述第一可固化树脂或粘合剂组合物被固化以在所述半导体器件与所述基材上的所述多个电焊盘之间提供所述刚性凸起。
2.如权利要求1所述的电子部件,其中所述多个刚性凸起是导电的。
3.如权利要求1所述的电子部件,其还包含在所述半导体器件与所述基材之间以及所述多个凸起中的每个与电焊盘之间形成层的底部填充材料,其中所述底部填充材料包含第二固化树脂,其由包含以下的第二可固化树脂或粘合剂组合物形成:
包含至少一种可聚合单体的有机媒介物;
至少一种响应于选定波长的光的光引发剂;以及
至少一种能量转换材料,其被选择成在暴露于选定的赋予辐射时发射所述波长的光。
4.如权利要求1所述的电子部件,其还包括:金属散热层,其附接到所述半导体部件的与具有所述多个凸起的一侧相反的一侧,其中所述金属散热层使用第三固化树脂附接到所述半导体部件,所述第三固化树脂由包含以下的第三可固化树脂或粘合剂组合物形成:
包含至少一种可聚合单体的有机媒介物;
至少一种响应于选定波长的光的光引发剂;以及
至少一种能量转换材料,其被选择成在暴露于选定的赋予辐射时发射所述波长的光;
其中所述第三固化树脂是导热的。
5.如权利要求4所述的电子部件,其中通过在所述第三固化树脂中包含颗粒使所述第三固化树脂导热,其中所述颗粒选自由金属颗粒和金属氮化物颗粒组成的组。
6.如权利要求5所述的电子部件,其中所述颗粒是金属氮化物颗粒。
7.如权利要求6所述的电子部件,其中所述金属氮化物颗粒是选自由AlN和BN组成的组中的一种。
8.如权利要求2所述的电子部件,其还包括:金属散热层,其附接到所述半导体部件的与具有所述多个凸起的一侧相反的一侧,其中所述金属散热层使用第三固化树脂附接到所述半导体部件,所述第三固化树脂由包含以下的第三可固化树脂或粘合剂组合物形成:
包含至少一种可聚合单体的有机媒介物;
至少一种响应于选定波长的光的光引发剂;以及
至少一种能量转换材料,其被选择成在暴露于选定的赋予辐射时发射所述波长的光;
其中所述第三固化树脂是导热的。
9.如权利要求8所述的电子部件,其中通过在所述第三固化树脂中包含颗粒使所述第三固化树脂导热,其中所述颗粒选自由金属颗粒和金属氮化物颗粒组成的组。
10.如权利要求9所述的电子部件,其中所述颗粒是金属氮化物颗粒。
11.如权利要求10所述的电子部件,其中所述金属氮化物颗粒是选自由AlN和BN组成的组中的一种。
12.如权利要求3所述的电子部件,其还包括:金属散热层,其附接到所述半导体部件的与具有所述多个凸起的一侧相反的一侧,其中所述金属散热层使用第三固化树脂附接到所述半导体部件,所述第三固化树脂由包含以下的第三可固化树脂或粘合剂组合物形成:
包含至少一种可聚合单体的有机媒介物;
至少一种响应于选定波长的光的光引发剂;以及
至少一种能量转换材料,其被选择成在暴露于选定的赋予辐射时发射所述波长的光;
其中所述第三固化树脂是导热的。
13.如权利要求12所述的电子部件,其中通过在所述第三固化树脂中包含颗粒使所述第三固化树脂导热,其中所述颗粒选自由金属颗粒和金属氮化物颗粒组成的组。
14.如权利要求13所述的电子部件,其中所述颗粒是金属氮化物颗粒。
15.如权利要求14所述的电子部件,其中所述金属氮化物颗粒是选自由AlN和BN组成的组中的一种。
16.一种包装器件,其包括根据权利要求1至15中任一项所述的电子部件,其中所述金属散热层延伸超过所述半导体器件的边缘并且连接到支撑侧,所述支撑侧从所述基材支撑所述金属散热层以气密密封所述半导体器件。
17.如权利要求16所述的包装器件,其中所述金属散热层的至少一部分被窗口代替,所述窗口对由所述半导体部件接收或传输的一个或多个波长的光是透明的。
18.如权利要求17所述的包装器件,其中至少一个支撑侧的至少一部分被窗口代替,所述窗口对由所述半导体部件接收或传输的一个或多个波长的光是透明的。
19.如权利要求16所述的包装器件,其中至少一个支撑侧的至少一部分被窗口代替,所述窗口对由所述半导体部件接收或传输的一个或多个波长的光是透明的。
20.一种包封半导体器件,其包括如权利要求1所述的电子部件,从而具有至少包封所述基材、凸起和电焊盘的球形顶部。
21.如权利要求20所述的包封半导体器件,其中所述球形顶部通过固化包含以下的可固化树脂或粘合剂组合物形成:
包含至少一种可聚合单体的有机媒介物;
至少一种响应于选定波长的光的光引发剂;以及
至少一种能量转换材料,其被选择成在暴露于选定的赋予辐射时发射所述波长的光。
22.如权利要求20所述的包封半导体器件,其中所述球形顶部具有高的透光率。
23.如权利要求21所述的包封半导体器件,其中所述至少一种能量转换材料的粒度小于所述固化树脂或粘合剂组合物的透射率的所需波长,以便为球状顶部提供所需的透光率。
24.如权利要求23所述的包封半导体器件,其中所述至少一种能量转换材料的粒度为400nm或更小。
25.一种光学透明的树脂或粘合剂组合物,其包含:
包含至少一种可聚合单体的有机媒介物,所述可聚合单体在聚合时形成光学透明的树脂或粘合剂;
至少一种响应于选定波长的光的光引发剂;以及
至少一种能量转换材料,其被选择成在暴露于选定的赋予辐射时发射所述波长的光,其中所述至少一种能量转换材料的粒度低于通过所述固化的光学透明的树脂或粘合剂传输的透射率的所需波长。
26.如权利要求25所述的光学透明的树脂或粘合剂组合物,其中所述至少一种能量转换材料的粒度为400nm或更小。
27.一种导电树脂或粘合剂组合物,其包含:
包含至少一种可聚合单体的有机媒介物,所述可聚合单体在聚合时形成导电的树脂或粘合剂;
至少一种响应于选定波长的光的光引发剂;以及
至少一种能量转换材料,其被选择成在暴露于选定的赋予辐射时发射所述波长的光,
使得所形成的所述树脂或粘合剂组合物在不存在导电添加剂的情况下表现出导电性或半导电性。
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