JP2020519000A - 接着剤ボンディング組成物及びこれから作製される電子部品 - Google Patents
接着剤ボンディング組成物及びこれから作製される電子部品 Download PDFInfo
- Publication number
- JP2020519000A JP2020519000A JP2019550775A JP2019550775A JP2020519000A JP 2020519000 A JP2020519000 A JP 2020519000A JP 2019550775 A JP2019550775 A JP 2019550775A JP 2019550775 A JP2019550775 A JP 2019550775A JP 2020519000 A JP2020519000 A JP 2020519000A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- particles
- light
- resin
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 121
- 238000004026 adhesive bonding Methods 0.000 title description 8
- 239000000853 adhesive Substances 0.000 claims abstract description 281
- 230000001070 adhesive effect Effects 0.000 claims abstract description 279
- 239000000463 material Substances 0.000 claims abstract description 155
- 229920005989 resin Polymers 0.000 claims abstract description 109
- 239000011347 resin Substances 0.000 claims abstract description 109
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 238000006243 chemical reaction Methods 0.000 claims abstract description 53
- 230000005855 radiation Effects 0.000 claims abstract description 50
- 239000000178 monomer Substances 0.000 claims abstract description 34
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 claims description 138
- 239000000758 substrate Substances 0.000 claims description 104
- 229910052751 metal Inorganic materials 0.000 claims description 69
- 239000002184 metal Substances 0.000 claims description 69
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 230000001965 increasing effect Effects 0.000 claims description 9
- 239000002923 metal particle Substances 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000002482 conductive additive Substances 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 112
- 238000000034 method Methods 0.000 abstract description 93
- 230000000977 initiatory effect Effects 0.000 abstract description 16
- 239000003999 initiator Substances 0.000 abstract description 13
- 230000000712 assembly Effects 0.000 abstract description 11
- 238000000429 assembly Methods 0.000 abstract description 11
- 230000003213 activating effect Effects 0.000 abstract description 7
- 238000001723 curing Methods 0.000 description 86
- 229920000642 polymer Polymers 0.000 description 69
- 239000011324 bead Substances 0.000 description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 52
- 235000012431 wafers Nutrition 0.000 description 51
- -1 aminopropyl groups Chemical group 0.000 description 49
- 239000010410 layer Substances 0.000 description 41
- 238000000576 coating method Methods 0.000 description 38
- 239000000976 ink Substances 0.000 description 34
- 230000008569 process Effects 0.000 description 32
- 239000011248 coating agent Substances 0.000 description 31
- 239000004033 plastic Substances 0.000 description 30
- 229920003023 plastic Polymers 0.000 description 30
- 239000002131 composite material Substances 0.000 description 29
- 239000000945 filler Substances 0.000 description 28
- 238000009472 formulation Methods 0.000 description 23
- 239000000377 silicon dioxide Substances 0.000 description 22
- 238000002156 mixing Methods 0.000 description 20
- 239000000126 substance Substances 0.000 description 20
- 239000004593 Epoxy Substances 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 19
- 239000012530 fluid Substances 0.000 description 18
- 239000002105 nanoparticle Substances 0.000 description 18
- 238000004132 cross linking Methods 0.000 description 17
- 229920001940 conductive polymer Polymers 0.000 description 16
- 238000009826 distribution Methods 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000000835 fiber Substances 0.000 description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 14
- 229910052737 gold Inorganic materials 0.000 description 14
- 239000010931 gold Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 230000035882 stress Effects 0.000 description 14
- 230000008901 benefit Effects 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 13
- 238000007689 inspection Methods 0.000 description 13
- 239000005020 polyethylene terephthalate Substances 0.000 description 13
- 229920000139 polyethylene terephthalate Polymers 0.000 description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 239000006185 dispersion Substances 0.000 description 12
- 239000000843 powder Substances 0.000 description 12
- 150000003254 radicals Chemical class 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
- 238000000465 moulding Methods 0.000 description 11
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 239000002270 dispersing agent Substances 0.000 description 10
- 238000005538 encapsulation Methods 0.000 description 10
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 230000003595 spectral effect Effects 0.000 description 10
- 229920001187 thermosetting polymer Polymers 0.000 description 10
- 239000000654 additive Substances 0.000 description 9
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 238000011010 flushing procedure Methods 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 9
- 238000000518 rheometry Methods 0.000 description 9
- 238000007792 addition Methods 0.000 description 8
- 239000002585 base Substances 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 239000007771 core particle Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000011282 treatment Methods 0.000 description 7
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 6
- 239000012965 benzophenone Substances 0.000 description 6
- 239000011246 composite particle Substances 0.000 description 6
- 238000007906 compression Methods 0.000 description 6
- 230000006835 compression Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000000295 emission spectrum Methods 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 239000002096 quantum dot Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 229910052582 BN Inorganic materials 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 5
- 229920001651 Cyanoacrylate Polymers 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000011231 conductive filler Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000008393 encapsulating agent Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 230000001976 improved effect Effects 0.000 description 5
- 238000001746 injection moulding Methods 0.000 description 5
- 230000005865 ionizing radiation Effects 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 5
- 238000004377 microelectronic Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 238000012856 packing Methods 0.000 description 5
- 239000004417 polycarbonate Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000011342 resin composition Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 231100000331 toxic Toxicity 0.000 description 5
- 230000002588 toxic effect Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 4
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 4
- WFUGQJXVXHBTEM-UHFFFAOYSA-N 2-hydroperoxy-2-(2-hydroperoxybutan-2-ylperoxy)butane Chemical compound CCC(C)(OO)OOC(C)(CC)OO WFUGQJXVXHBTEM-UHFFFAOYSA-N 0.000 description 4
- 229910002012 Aerosil® Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 125000002091 cationic group Chemical group 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000011532 electronic conductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- NOESYZHRGYRDHS-UHFFFAOYSA-N insulin Chemical compound N1C(=O)C(NC(=O)C(CCC(N)=O)NC(=O)C(CCC(O)=O)NC(=O)C(C(C)C)NC(=O)C(NC(=O)CN)C(C)CC)CSSCC(C(NC(CO)C(=O)NC(CC(C)C)C(=O)NC(CC=2C=CC(O)=CC=2)C(=O)NC(CCC(N)=O)C(=O)NC(CC(C)C)C(=O)NC(CCC(O)=O)C(=O)NC(CC(N)=O)C(=O)NC(CC=2C=CC(O)=CC=2)C(=O)NC(CSSCC(NC(=O)C(C(C)C)NC(=O)C(CC(C)C)NC(=O)C(CC=2C=CC(O)=CC=2)NC(=O)C(CC(C)C)NC(=O)C(C)NC(=O)C(CCC(O)=O)NC(=O)C(C(C)C)NC(=O)C(CC(C)C)NC(=O)C(CC=2NC=NC=2)NC(=O)C(CO)NC(=O)CNC2=O)C(=O)NCC(=O)NC(CCC(O)=O)C(=O)NC(CCCNC(N)=N)C(=O)NCC(=O)NC(CC=3C=CC=CC=3)C(=O)NC(CC=3C=CC=CC=3)C(=O)NC(CC=3C=CC(O)=CC=3)C(=O)NC(C(C)O)C(=O)N3C(CCC3)C(=O)NC(CCCCN)C(=O)NC(C)C(O)=O)C(=O)NC(CC(N)=O)C(O)=O)=O)NC(=O)C(C(C)CC)NC(=O)C(CO)NC(=O)C(C(C)O)NC(=O)C1CSSCC2NC(=O)C(CC(C)C)NC(=O)C(NC(=O)C(CCC(N)=O)NC(=O)C(CC(N)=O)NC(=O)C(NC(=O)C(N)CC=1C=CC=CC=1)C(C)C)CC1=CN=CN1 NOESYZHRGYRDHS-UHFFFAOYSA-N 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 238000011068 loading method Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000001699 photocatalysis Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- 230000009974 thixotropic effect Effects 0.000 description 4
- 238000009736 wetting Methods 0.000 description 4
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 3
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 3
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004971 Cross linker Substances 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 238000003848 UV Light-Curing Methods 0.000 description 3
- 206010052428 Wound Diseases 0.000 description 3
- 208000027418 Wounds and injury Diseases 0.000 description 3
- 239000005083 Zinc sulfide Substances 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011805 ball Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000001010 compromised effect Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- NLCKLZIHJQEMCU-UHFFFAOYSA-N cyano prop-2-enoate Chemical class C=CC(=O)OC#N NLCKLZIHJQEMCU-UHFFFAOYSA-N 0.000 description 3
- 238000005034 decoration Methods 0.000 description 3
- ISAOCJYIOMOJEB-UHFFFAOYSA-N desyl alcohol Natural products C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 150000002118 epoxides Chemical class 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000000543 intermediate Substances 0.000 description 3
- 239000010985 leather Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 150000002978 peroxides Chemical class 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 239000011941 photocatalyst Substances 0.000 description 3
- 238000013032 photocatalytic reaction Methods 0.000 description 3
- 239000004014 plasticizer Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920002492 poly(sulfone) Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 239000011253 protective coating Substances 0.000 description 3
- 238000010526 radical polymerization reaction Methods 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229920001059 synthetic polymer Polymers 0.000 description 3
- 239000002562 thickening agent Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- RIWRBSMFKVOJMN-UHFFFAOYSA-N 2-methyl-1-phenylpropan-2-ol Chemical compound CC(C)(O)CC1=CC=CC=C1 RIWRBSMFKVOJMN-UHFFFAOYSA-N 0.000 description 2
- LUJMEECXHPYQOF-UHFFFAOYSA-N 3-hydroxyacetophenone Chemical compound CC(=O)C1=CC=CC(O)=C1 LUJMEECXHPYQOF-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- JOOXCMJARBKPKM-UHFFFAOYSA-N 4-oxopentanoic acid Chemical compound CC(=O)CCC(O)=O JOOXCMJARBKPKM-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- 102000004877 Insulin Human genes 0.000 description 2
- 108090001061 Insulin Proteins 0.000 description 2
- 229910017768 LaF 3 Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 244000028419 Styrax benzoin Species 0.000 description 2
- 235000000126 Styrax benzoin Nutrition 0.000 description 2
- 235000008411 Sumatra benzointree Nutrition 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000004840 adhesive resin Substances 0.000 description 2
- 229920006223 adhesive resin Polymers 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229960002130 benzoin Drugs 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- 230000002902 bimodal effect Effects 0.000 description 2
- 238000010504 bond cleavage reaction Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000010538 cationic polymerization reaction Methods 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000002322 conducting polymer Substances 0.000 description 2
- 239000004035 construction material Substances 0.000 description 2
- 239000002872 contrast media Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229920006334 epoxy coating Polymers 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 235000019382 gum benzoic Nutrition 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229940125396 insulin Drugs 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- YLHXLHGIAMFFBU-UHFFFAOYSA-N methyl phenylglyoxalate Chemical compound COC(=O)C(=O)C1=CC=CC=C1 YLHXLHGIAMFFBU-UHFFFAOYSA-N 0.000 description 2
- 239000011806 microball Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000005325 percolation Methods 0.000 description 2
- 229960003424 phenylacetic acid Drugs 0.000 description 2
- 239000003279 phenylacetic acid Substances 0.000 description 2
- FAQJJMHZNSSFSM-UHFFFAOYSA-N phenylglyoxylic acid Chemical compound OC(=O)C(=O)C1=CC=CC=C1 FAQJJMHZNSSFSM-UHFFFAOYSA-N 0.000 description 2
- 238000007146 photocatalysis Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- 238000003908 quality control method Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000010561 standard procedure Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 2
- 230000008733 trauma Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- PJCBRWRFLHBSNH-UHFFFAOYSA-N (2,5-dimethylphenyl)-phenylmethanone Chemical compound CC1=CC=C(C)C(C(=O)C=2C=CC=CC=2)=C1 PJCBRWRFLHBSNH-UHFFFAOYSA-N 0.000 description 1
- CKGKXGQVRVAKEA-UHFFFAOYSA-N (2-methylphenyl)-phenylmethanone Chemical compound CC1=CC=CC=C1C(=O)C1=CC=CC=C1 CKGKXGQVRVAKEA-UHFFFAOYSA-N 0.000 description 1
- JENOLWCGNVWTJN-UHFFFAOYSA-N (3,4-dimethylphenyl)-phenylmethanone Chemical compound C1=C(C)C(C)=CC=C1C(=O)C1=CC=CC=C1 JENOLWCGNVWTJN-UHFFFAOYSA-N 0.000 description 1
- URBLVRAVOIVZFJ-UHFFFAOYSA-N (3-methylphenyl)-phenylmethanone Chemical compound CC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1 URBLVRAVOIVZFJ-UHFFFAOYSA-N 0.000 description 1
- WBTMFEPLVQOWFI-UHFFFAOYSA-N 1,3-dichloro-5-(2,5-dichlorophenyl)benzene Chemical compound ClC1=CC=C(Cl)C(C=2C=C(Cl)C=C(Cl)C=2)=C1 WBTMFEPLVQOWFI-UHFFFAOYSA-N 0.000 description 1
- VNQXSTWCDUXYEZ-UHFFFAOYSA-N 1,7,7-trimethylbicyclo[2.2.1]heptane-2,3-dione Chemical compound C1CC2(C)C(=O)C(=O)C1C2(C)C VNQXSTWCDUXYEZ-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- YJFNFQHMQJCPRG-UHFFFAOYSA-N 1-(4-ethoxyphenyl)ethanone Chemical compound CCOC1=CC=C(C(C)=O)C=C1 YJFNFQHMQJCPRG-UHFFFAOYSA-N 0.000 description 1
- DJNIFZYQFLFGDT-UHFFFAOYSA-N 1-(4-phenoxyphenyl)ethanone Chemical compound C1=CC(C(=O)C)=CC=C1OC1=CC=CC=C1 DJNIFZYQFLFGDT-UHFFFAOYSA-N 0.000 description 1
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 1
- YWEJNVNVJGORIU-UHFFFAOYSA-N 2-(2-hydroxyethoxy)ethyl 2-hydroxy-2-phenylacetate Chemical compound OCCOCCOC(=O)C(O)C1=CC=CC=C1 YWEJNVNVJGORIU-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- SJEBAWHUJDUKQK-UHFFFAOYSA-N 2-ethylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3C(=O)C2=C1 SJEBAWHUJDUKQK-UHFFFAOYSA-N 0.000 description 1
- LRRQSCPPOIUNGX-UHFFFAOYSA-N 2-hydroxy-1,2-bis(4-methoxyphenyl)ethanone Chemical compound C1=CC(OC)=CC=C1C(O)C(=O)C1=CC=C(OC)C=C1 LRRQSCPPOIUNGX-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- ZSNLOGRWRVNZRH-UHFFFAOYSA-N 3-(7-oxobenzo[a]phenalen-3-yl)benzo[b]phenalen-7-one Chemical group C12=CC=CC(C(=O)C=3C4=CC=CC=3)=C2C4=CC=C1C1=CC=C2C3=C1C=CC=C3C(=O)C1=CC=CC=C12 ZSNLOGRWRVNZRH-UHFFFAOYSA-N 0.000 description 1
- TXFPEBPIARQUIG-UHFFFAOYSA-N 4'-hydroxyacetophenone Chemical compound CC(=O)C1=CC=C(O)C=C1 TXFPEBPIARQUIG-UHFFFAOYSA-N 0.000 description 1
- RXNYJUSEXLAVNQ-UHFFFAOYSA-N 4,4'-Dihydroxybenzophenone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1 RXNYJUSEXLAVNQ-UHFFFAOYSA-N 0.000 description 1
- NPFYZDNDJHZQKY-UHFFFAOYSA-N 4-Hydroxybenzophenone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=CC=C1 NPFYZDNDJHZQKY-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- RZVHIXYEVGDQDX-UHFFFAOYSA-N 9,10-anthraquinone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1 RZVHIXYEVGDQDX-UHFFFAOYSA-N 0.000 description 1
- MMNWSHJJPDXKCH-UHFFFAOYSA-N 9,10-dioxoanthracene-2-sulfonic acid Chemical compound C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 MMNWSHJJPDXKCH-UHFFFAOYSA-N 0.000 description 1
- FCNCGHJSNVOIKE-UHFFFAOYSA-N 9,10-diphenylanthracene Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 FCNCGHJSNVOIKE-UHFFFAOYSA-N 0.000 description 1
- YYVYAPXYZVYDHN-UHFFFAOYSA-N 9,10-phenanthroquinone Chemical compound C1=CC=C2C(=O)C(=O)C3=CC=CC=C3C2=C1 YYVYAPXYZVYDHN-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002710 Au-Pd Inorganic materials 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 239000007848 Bronsted acid Substances 0.000 description 1
- 230000005653 Brownian motion process Effects 0.000 description 1
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 1
- XVZXOLOFWKSDSR-UHFFFAOYSA-N Cc1cc(C)c([C]=O)c(C)c1 Chemical group Cc1cc(C)c([C]=O)c(C)c1 XVZXOLOFWKSDSR-UHFFFAOYSA-N 0.000 description 1
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical class [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004822 Hot adhesive Substances 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 239000002879 Lewis base Substances 0.000 description 1
- 241000600169 Maro Species 0.000 description 1
- 206010027476 Metastases Diseases 0.000 description 1
- MWCLLHOVUTZFKS-UHFFFAOYSA-N Methyl cyanoacrylate Chemical compound COC(=O)C(=C)C#N MWCLLHOVUTZFKS-UHFFFAOYSA-N 0.000 description 1
- 238000006845 Michael addition reaction Methods 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000004830 Super Glue Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- BEUGBYXJXMVRFO-UHFFFAOYSA-N [4-(dimethylamino)phenyl]-phenylmethanone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=CC=C1 BEUGBYXJXMVRFO-UHFFFAOYSA-N 0.000 description 1
- ZBTDWLVGWJNPQM-UHFFFAOYSA-N [Ni].[Cu].[Au] Chemical compound [Ni].[Cu].[Au] ZBTDWLVGWJNPQM-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- YAIBDWAANBTYIA-UHFFFAOYSA-N aceanthrylene-1,2-dione Chemical compound C1=CC=C2C(C(C3=O)=O)=C4C3=CC=CC4=CC2=C1 YAIBDWAANBTYIA-UHFFFAOYSA-N 0.000 description 1
- AFPRJLBZLPBTPZ-UHFFFAOYSA-N acenaphthoquinone Chemical compound C1=CC(C(C2=O)=O)=C3C2=CC=CC3=C1 AFPRJLBZLPBTPZ-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000013466 adhesive and sealant Substances 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 238000005576 amination reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000008365 aromatic ketones Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 description 1
- 239000007844 bleaching agent Substances 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 229930006711 bornane-2,3-dione Natural products 0.000 description 1
- 238000005537 brownian motion Methods 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000012952 cationic photoinitiator Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 239000000701 coagulant Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- PESYEWKSBIWTAK-UHFFFAOYSA-N cyclopenta-1,3-diene;titanium(2+) Chemical compound [Ti+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 PESYEWKSBIWTAK-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000005520 diaryliodonium group Chemical group 0.000 description 1
- SNVTZAIYUGUKNI-UHFFFAOYSA-N dibenzo[1,2-a:1',2'-e][7]annulen-11-one Chemical compound C1=CC2=CC=CC=C2C(=O)C2=CC=CC=C21 SNVTZAIYUGUKNI-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- GNBHRKFJIUUOQI-UHFFFAOYSA-N fluorescein Chemical compound O1C(=O)C2=CC=CC=C2C21C1=CC=C(O)C=C1OC1=CC(O)=CC=C21 GNBHRKFJIUUOQI-UHFFFAOYSA-N 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- MGFYSGNNHQQTJW-UHFFFAOYSA-N iodonium Chemical compound [IH2+] MGFYSGNNHQQTJW-UHFFFAOYSA-N 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- BSIHWSXXPBAGTC-UHFFFAOYSA-N isoviolanthrone Chemical compound C12=CC=CC=C2C(=O)C2=CC=C3C(C4=C56)=CC=C5C5=CC=CC=C5C(=O)C6=CC=C4C4=C3C2=C1C=C4 BSIHWSXXPBAGTC-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 229940040102 levulinic acid Drugs 0.000 description 1
- 150000007527 lewis bases Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000002688 maleic acid derivatives Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 230000009401 metastasis Effects 0.000 description 1
- 239000002991 molded plastic Substances 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229920005615 natural polymer Polymers 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000002921 oxetanes Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000006385 ozonation reaction Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- LYXOWKPVTCPORE-UHFFFAOYSA-N phenyl-(4-phenylphenyl)methanone Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1C(=O)C1=CC=CC=C1 LYXOWKPVTCPORE-UHFFFAOYSA-N 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 230000002186 photoactivation Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 208000017983 photosensitivity disease Diseases 0.000 description 1
- 231100000434 photosensitization Toxicity 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000329 polyazepine Polymers 0.000 description 1
- 229920000323 polyazulene Polymers 0.000 description 1
- 229920001088 polycarbazole Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000417 polynaphthalene Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002102 polyvinyl toluene Polymers 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 238000003847 radiation curing Methods 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229920002631 room-temperature vulcanizate silicone Polymers 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 238000006277 sulfonation reaction Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000005320 surfactant adsorption Methods 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 230000001225 therapeutic effect Effects 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 238000009757 thermoplastic moulding Methods 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 230000000699 topical effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 125000005409 triarylsulfonium group Chemical group 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- LOFJKBAHPJENQS-UHFFFAOYSA-N tris(oxomethylidene)chromium Chemical compound O=C=[Cr](=C=O)=C=O LOFJKBAHPJENQS-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/22—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
- B32B5/24—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
- B32B5/26—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer another layer next to it also being fibrous or filamentary
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/10—Formation of a green body
- B22F10/12—Formation of a green body by photopolymerisation, e.g. stereolithography [SLA] or digital light processing [DLP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
- B22F5/04—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of turbine blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/34—Laser welding for purposes other than joining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/06—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of natural rubber or synthetic rubber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B25/00—Layered products comprising a layer of natural or synthetic rubber
- B32B25/04—Layered products comprising a layer of natural or synthetic rubber comprising rubber as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B25/042—Layered products comprising a layer of natural or synthetic rubber comprising rubber as the main or only constituent of a layer, which is next to another layer of the same or of a different material of natural rubber or synthetic rubber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B25/00—Layered products comprising a layer of natural or synthetic rubber
- B32B25/04—Layered products comprising a layer of natural or synthetic rubber comprising rubber as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B25/045—Layered products comprising a layer of natural or synthetic rubber comprising rubber as the main or only constituent of a layer, which is next to another layer of the same or of a different material of foam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B25/00—Layered products comprising a layer of natural or synthetic rubber
- B32B25/10—Layered products comprising a layer of natural or synthetic rubber next to a fibrous or filamentary layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
- B32B5/12—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer characterised by the relative arrangement of fibres or filaments of different layers, e.g. the fibres or filaments being parallel or perpendicular to each other
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/18—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by features of a layer of foamed material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/22—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
- B32B5/24—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
- B32B5/245—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer another layer next to it being a foam layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/02—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising animal or vegetable substances, e.g. cork, bamboo, starch
- B32B9/025—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising animal or vegetable substances, e.g. cork, bamboo, starch comprising leather
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/043—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of natural rubber or synthetic rubber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y30/00—Apparatus for additive manufacturing; Details thereof or accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y50/00—Data acquisition or data processing for additive manufacturing
- B33Y50/02—Data acquisition or data processing for additive manufacturing for controlling or regulating additive manufacturing processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
- C09D11/101—Inks specially adapted for printing processes involving curing by wave energy or particle radiation, e.g. with UV-curing following the printing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/61—Additives non-macromolecular inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
- B01L3/502707—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the manufacture of the container or its components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F12/00—Apparatus or devices specially adapted for additive manufacturing; Auxiliary means for additive manufacturing; Combinations of additive manufacturing apparatus or devices with other processing apparatus or devices
- B22F12/22—Driving means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F12/00—Apparatus or devices specially adapted for additive manufacturing; Auxiliary means for additive manufacturing; Combinations of additive manufacturing apparatus or devices with other processing apparatus or devices
- B22F12/40—Radiation means
- B22F12/44—Radiation means characterised by the configuration of the radiation means
- B22F12/45—Two or more
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F2003/1042—Sintering only with support for articles to be sintered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F2007/068—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts repairing articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
- B32B2260/02—Composition of the impregnated, bonded or embedded layer
- B32B2260/021—Fibrous or filamentary layer
- B32B2260/023—Two or more layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
- B32B2260/04—Impregnation, embedding, or binder material
- B32B2260/046—Synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4239—Adhesive bonding; Encapsulation with polymer material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
- H01L2224/11312—Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
- H01L2224/1132—Screen printing, i.e. using a stencil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/114—Manufacturing methods by blanket deposition of the material of the bump connector
- H01L2224/1146—Plating
- H01L2224/11462—Electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/114—Manufacturing methods by blanket deposition of the material of the bump connector
- H01L2224/1146—Plating
- H01L2224/11464—Electroless plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
- H01L2224/13082—Two-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
- H01L2224/13083—Three-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
- H01L2224/13084—Four-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13199—Material of the matrix
- H01L2224/1329—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13399—Coating material
- H01L2224/1349—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
- H01L2224/27312—Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
- H01L2224/2732—Screen printing, i.e. using a stencil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/2901—Shape
- H01L2224/29011—Shape comprising apertures or cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/2949—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/2954—Coating
- H01L2224/29575—Plural coating layers
- H01L2224/2958—Plural coating layers being stacked
- H01L2224/29583—Three-layer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/2954—Coating
- H01L2224/29599—Material
- H01L2224/2969—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/32146—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the layer connector connecting to a via connection in the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73207—Bump and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
- H01L2224/75101—Chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7565—Means for transporting the components to be connected
- H01L2224/75651—Belt conveyor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75703—Mechanical holding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75744—Suction holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75753—Means for optical alignment, e.g. sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/759—Means for monitoring the connection process
- H01L2224/75901—Means for monitoring the connection process using a computer, e.g. fully- or semi-automatic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83102—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus using surface energy, e.g. capillary forces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
- H01L2224/8313—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
- H01L2224/83132—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
- H01L2224/83139—Guiding structures on the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
- H01L2224/8314—Guiding structures outside the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83193—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83871—Visible light curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83874—Ultraviolet [UV] curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/839—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector with the layer connector not providing any mechanical bonding
- H01L2224/83901—Pressing the layer connector against the bonding areas by means of another connector
- H01L2224/83902—Pressing the layer connector against the bonding areas by means of another connector by means of another layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Wire Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
本出願は、2017年3月10日に出願された米国出願第15/455,573号、2016年12月19日に出願された米国出願第15/382,835号、2015年1月9日に出願された米国出願第14/593,049号、2011年5月6日に出願された米国出願第13/102,277号(現在、米国特許第9,023,249号)、2010年5月6日に出願された米国仮特許出願番号第61/331,990号、及び2011年2月15日に出願された米国仮特許出願番号第61/443,019号に関連し、これらの各々の全内容が、参照により本明細書に組み込まれる。本出願はまた、2009年3月18日に出願された米国仮特許出願第61/161,328号、2009年11月10日に出願された米国仮特許出願第61/259,940号、2007年8月6日に出願された米国仮特許出願番号第60/954,263号、及び2008年2月21日に出願された同第61/030,437号、2008年3月31日に出願された米国出願番号第12/059,484号、2007年11月6日に出願された米国出願番号第11/935,655号、2008年4月4日に出願された米国仮特許出願番号第61/042,561号、2008年3月11日に出願された同第61/035,559号、及び2008年7月11日に出願された同第61/080,140号、2009年3月10日に出願された米国特許出願第12/401,478号、2007年11月6日に出願された米国特許出願第11/935,655号、2008年3月31日に出願された米国特許出願第12/059,484号、2009年2月20日に出願された米国特許出願第12/389,946号、ならびに2009年4月3日に出願された米国特許出願第12/417,779号に関連し、これらの各々の全内容が、参照により本明細書に組み込まれる。
少なくとも1つの重合可能なモノマーまたは複数の架橋可能なポリマー鎖を含む重合可能または架橋可能な有機ビヒクルと、
選択された光波長に応答する少なくとも1つの光開始剤と、
選択された付与放射線に暴露されたときに上記の光波長を放出するように選択された少なくとも1つのエネルギー変換材料と、
を含む硬化性接着剤組成物、ならびに、
種々のアセンブリ及び構成物、特に、種々の電子及び半導体部品の調製におけるその使用、
の発見によって満足された。
a−見通し線を伴わずに硬化する(接着が起こるボンディング線は、ボンディングされる構造よりも内側にある)
b−浸透深さの限界を伴わずに硬化する(ボンディング線は、硬化反応速度論を損なうことなく材料の内側で深くなっていてよい)
c−熱膨張の不適合を伴わずに硬化する(室温でボンディングし、ボンディング線における圧縮及び引張応力を回避する能力)
d−接着剤を選択的に硬化する(接着剤がエネルギー変換粒子を有する場合にのみ接着剤にネットワークを形成させる、これは、選択的な硬化幾何学を生じさせるのに使用され得る)
e−接着剤は、好適な特性を有する(電気的−誘電性、非導電性から、非等方半導性から導電性までを含む、機械的−剛性または弾性コンプライアンス(第2の相軟化剤の使用)、光学的−透明から不透明、酸対塩基の制御−インクから水溶液までの種々の環境に耐える能力、望ましい範囲の接着剤ボンディング強度)
−分配は、限定されないが、ピストンもしくはオーガーポンプ、スピンコーティング、スプレーコーティング、またはスクリーン印刷を使用した分配を含めた任意の従来の分配システムを使用して実施され得る。
−接着剤は、検査用のトレーサ要素を所望により含有し得る。
−接着剤は、光学検査用顔料を所望により含有し得る。
−接着剤は、硬化後の色を変化させるように所望により作製され得る。
半導体のボンディング、例えば、室温における、ウェハボンディング、ダイツーウェハボンディング、ダイオンダイボンディング、パッケージオンパッケージアセンブリなど。これは、異方導電性接着剤に特に有用な分野である。
・表面だけでなく内部でも生体組織を接着剤ボンディングすることが挙げられる。これは、縫合またはステープルの必要性を排除する。現在、シアノアクリレート(「SuperGlue」)型接着剤は、これらの用途に使用されている。しかし、シアノアクリレートは、一般に硬化するときに発熱し、これは、細胞剥離につながり得る。
・出血を処置する凝固剤の活性化−外傷または広範な手術において最も有価である。本発明接着剤は、外傷の患者において一時的な「応急」処置として使用され得、介護人に、患者が出血することなく傷に対処するためのより多くの時間を与える。
・硬化される物品全体を通しての均一な硬化により局所修復に最も適している、構成材料の遠隔硬化。
・織物、例えば、悪天候ギアの、熱を伴わないボンディング、これにより、熱ボンディングで作り出される溶融、及び不浸透性材料に穴を開ける(ステッチする)必要性を排除する。
異なる材料の熱膨張係数間の不適合は、以下の表によって示され得る。本発明は、熱を用いない材料の接続を可能にし、そのため、接着剤を熱硬化することによって余儀なくされる、熱的加熱の際の典型的にトラップされる応力を回避する。現発明は、顕著に異なるCTEの材料間での硬化を可能にする。
本発明材料の第1必須要素は、光開始剤を含むモノマー系である。アクリレートまたはスチレンをベースとする配合物のラジカル重合が広く開発されている。これは、典型的には、UV(300〜400nmの範囲)付近を使用した放射線硬化によるものであるが、現在は、光開始剤が、可視からIRまでの範囲において、ならびに深UVの範囲にも利用可能である。ルイス酸またはブレンステッド酸のいずれかを生じるカチオン性光開始剤は、材料(例えば、エポキシド)をカチオン重合するための開始剤として、また、重縮合反応を介した架橋が可能である樹脂に使用され得る。
本発明材料の第2必須要素は、付与エネルギーを変換し、これを、光開始剤によって効果的に吸収され得るスペクトル範囲で光子に変換することが可能である材料である。好ましくは、エネルギー変換材料は、(典型的には電離放射線、例えば、X線からの)より高いエネルギーの光子を吸収してダウンコンバートし、より低いエネルギーの光子(典型的にはUV)を光開始剤によって効果的に吸収され得るスペクトル範囲で生じさせることが可能であるダウンコンバート材料である。これらの材料は、2つのクラス:シンチレータ及び蛍光体、に広く分類される。限定することなく、金属酸化物、金属硫化物、ドープト金属酸化物、または混合金属カルコゲニドを含めた多くのダウンコンバータ材料が公知である。例えば、その内容が参照により本明細書に組み込まれるKishimoto et al.(Appl. Pys Lett. 2008,93,261901)によって開示されている有機−無機ハイブリッドシンチレータもこのカテゴリーに包含される。
いくつかの用途において、望ましい入射または開始エネルギーはX線(例えばEUV)と異なるが、望ましいダウンコンバートされた出力強度がUVAにおいて残存する。他の用途において、望ましい入射または開始エネルギーはX線であるが、蛍光体の望ましいダウンコンバートされたエネルギー出力は、UVBにおけるものである。さらに、他の場合において、望ましい入射または開始エネルギーはX線であるが、蛍光体の望ましいダウンコンバートされたエネルギー出力は、UVA及びUVBにおけるものである。選択された蛍光体は、X線、極UV及びe線を含めた励起源によって作動するように選択された。X線領域内では、選択された蛍光体は、治療的腫瘍処置、医用画像及び半導体検査に使用される市販の機器源から生じるX線光子束とカップリングし得る。
対象となる別の可能性は、少なくとも2つの蛍光体を混合して、出発蛍光体と比較して混合物の出力を広くする能力である。この例において、それぞれ異なる領域で発光する2つの蛍光体を共に混合し、出力スペクトル出力を測定して、出発材料と比較して混合物の出力強度に影響する能力を実証した。(図4及び5を参照されたい)
蛍光体の粒径は、関連因子である。粒径が小さいほど、表面積が大きい。小さい粒子は、より大きい蛍光体粒子よりも効果的に、光触媒を含有する樹脂のレオロジーを変化させることが見出された。粒径が大きいほど、強度出力が高い。蛍光体は、粒径分布(モノモーダル粒径分布ではない)を含有するとき、X線からUVAへの変換及び樹脂系内での光触媒の活性化の点で、よく機能することが見出された。小さい粒子を有する(すなわち、大きい表面積を有する)蛍光体を、活性シリカ(またはAEROSIL)を使用することなく樹脂の粘度を増加させるために、成功裏に使用した。実際には、十分な蛍光体ナノ粒子が活性シリカの代わりに添加されて粘度を調整するという新しい方法が開発された。最も良好な光活性化及び粘度調整は、ナノ粒子が最大5ミクロンの粒径の粒子を有する蛍光体と共に使用されるときに見られた。本質的に、バイモーダル粒子分布は、充填率(または樹脂中への蛍光体分の投入)を助け、また、制御可能な粘度を有する接着剤の配合のためのレオロジー制御及びUVA光強度生成の点において、X線下で良好な硬化を助ける。トリモーダルまたは大きい粒径分布は、X線下で接着剤のレオロジー及び接着剤の硬化応答を平衡化させるのに有効である。
現発明に記載されている無機化合物(または蛍光体)に加えて、有機化合物が、現発明に記載されているものと同じ目的を達成するのに使用され得る。アントラセン及びアントラセン系化合物は、本発明の目的(見通し線及び熱エネルギーによらない硬化)を達成するのに使用され得る。アントラセンは、紫外光下で青色(400〜500nmのピーク)蛍光を示す。さらに、アントラセンは、X線エネルギー下で蛍光を示すことが見出された。アントラセン光出力は、Nal(Tl)の40%〜50%であると測定された。
最も効率的なシステムは、特定の光開始剤が、その吸収、入射放射線の強度に対するその光触媒感度(すなわち、エネルギー移動の効率)に基づいて選択されることが認識されよう。
さらに、蛍光体粒子と光開始剤との間の距離は、エネルギー移動の効率に影響する。光開始剤と蛍光体との間の距離が短いほど、反応の成功につながるエネルギー移動の機会がより多く生じる。硬化可能な系の混合物内では、多くの粒子と、比較的高濃度の光開始剤とが存在する。結果として、粒子と光開始剤との間の1を超える距離が存在する。これらの場合において、本発明者らは、蛍光体粒子と光開始剤との間の平均距離に注意を向ける。
UV硬化性材料は多様であり得る、しかし、一般のカテゴリー化として、記載されている以下の材料は、具体的な樹脂ファミリー、関連する開始剤、硬化メカニズム及び適切な適用によってまとめられる。これは、決して包括的なリストではないが、ただ、さらなる説明のための一般のカテゴリー化である。現発明は、ラジカル架橋または重合、カチオン性架橋、塩基触媒架橋を含めたこれらのカテゴリーのそれぞれと適合可能である。
ラジカル架橋または重合は、樹脂系、例えば、アクリレート、マレエート、スチレンを利用する。これらの場合において使用される開始剤には、芳香族ケトン、例えば、フェニル−グリオキシレート、フェニル−グリオキシレート、アルファ−アミノケトン、ベンジルジメチルケタール、ビスアシルホスフィンオキシド、モノアシルホスフィンオキシド、ベンゾフェノンが含まれる。
カチオン性架橋は、樹脂系、例えば、エポキシド、ビニルエーテル、オキセタンを利用する。これらの場合において使用される開始剤として、2〜3例を挙げると、ジアリールヨードニウム塩、トリアリールスルホニウム塩及びオニウム塩が挙げられる。かかるカチオン性架橋の用途は、電子材料、インク及び接着剤において見出される。これらの特有の塩への添加は、カチオン重合につながる陽子発生による硬化をトリガーする。現発明に記載されている蛍光体は、カチオン性硬化性材料及びその用途に適用可能である。
塩基触媒架橋は、樹脂系、例えば、エポキシ、ポリオール/イソシアネート、及びマイケル付加を利用する。硬化のメカニズムは、ルイス塩基発生剤をベースとするものである。塩基触媒架橋の用途は、コーティング及び接着剤まで拡がる。
(蛍光体の使用によるまたはよらない)X線エネルギーによる直接硬化も本発明において可能である。例えば、X線エネルギー下、直接活性化される可能性を有する化学化合物、例えば、有機過酸化物であるメチルエチルケトン過酸化物(MEKP)を添加して、重合を開始するのを手伝うことができる。また、過酸化物連結によって橋かけされている2つのベンゾイル基を有する過酸化物ファミリーにおける別の化合物である過酸化ベンゾイルは、X線下での重合の開始を手伝うのに使用することができる。蛍光体及びこれらの過酸化物ベースの化学物質の効果は、付加的であり得る。
いくつかの用途において、2つの接着剤ビーズを有することが有用である。一方の接着剤ビーズは、高い有効充填密度を有する蛍光体によって充填されており、別の接着剤ビーズは、より低い充填密度を有している。この場合、同じX線エネルギー強度下では、一方のビーズが他方よりも速く硬化する。いくつかのダムアンドフィル用途において、例えば、RF−IDにおいて、一方では、ダムを適用し、これを硬化し、次いで、フィルを充填及び硬化することができる。(図9を参照されたい)しかし、一方では、フィラーと比較して封じ込めビーズに、より多くの開始エネルギーをカップリングする能力によって、現発明に記載されている方法を使用して2つの接着剤ビーズを同時硬化することができる。これらの方法は、封じ込めビーズ及びフィラー材料を同時に硬化すること(同時硬化)または一方を他方の後に硬化すること(逐次硬化)を可能にする。同じ基剤の接着剤が、フィラー材料とは異なる変換効率の蛍光体を有する封じ込めビーズと共に両方の場合(恐らくは同じ化学配合)に使用され得る。これは、蛍光体の適切な選択または蛍光体分によって容易になされ得る。ある程度、接着剤ビーズは、同時に効果的に硬化され得るが、一方において他方よりも高いUV強度が見られ、同じX線下で他方よりも速く硬化する。
ミクロン及びナノメータ粒径での蛍光体の合成は、種々の方法を使用してなされ得る。また、種々の蛍光体が、異なる表面化学を有していてもよい。いくつかの蛍光体は、高用量で潜在的に吸湿性または毒性であり得る。吸湿性または潜在的に毒性の蛍光体の使用を可能にするための1つの方法は、蛍光体粒子の周りに含有バリア層を形成することである。このことは、異なる蛍光体化学を標準化して、予測可能な挙動で共通の同じ表面化学を有するようにすること、及び、バリア層内の蛍光体を遮蔽することの二重の利益を有する。ゾルゲル誘導シリケートコーティングは、これを達成し得る1つの方法である。シリカは、偶然にUV透明であり、吸湿性でない大部分の酸化物及び大部分の蛍光体と合致する(蛍光体の表に列挙されている)。
樹脂内での蛍光体の分散の均一性は、かなり重要である。硬化可能な系内の蛍光体の均一な分布は、硬化性材料の均質性、ゆえに、硬化性材料の機械的及び光学特性に影響を及ぼす。混合均一性及び粒径分布は、開始エネルギー下での時間の関数としての硬化程度の点で硬化系の応答に影響を与える。分散の均一性は、蛍光体が樹脂中での沈降につながる高い特定の密度を有するとき、短命であり得る。この理由で、いくつかの表面修飾技術は、懸濁状態で蛍光体を維持することが望ましくあり得る。
蛍光体の表面は、2つの一般的な目的で修飾され得る。一方の方法は、蛍光体の表面上への光開始剤の連結または吸着につながる。他方の方法は、蛍光体の表面に分散剤化学構造物を添加して、蛍光体が、接着剤が配合されて成分が共に混合された後に懸濁状態のままであることを可能にすることである。概して、蛍光体は、最小の粒子間集塊で粉末形態にあることが好ましい。樹脂系への蛍光体粉末の分散は、種々の方法を使用して達成され得る。これらの分散方法は、室温で、または室温よりも20℃〜30℃高い温度での粒子のブラウン運動によって引き起こされる潜在的な再凝集を制限または防止することによって蛍光体を懸濁状態で保つ。これらの室温より僅かに高い温度は、ピストンまたはオーガーポンプを使用してニードルを通して接着剤を分配するのに有用である。
本発明において使用されるダウンコンバート粒子及び光開始剤は、硬化性接着剤配合物に別個の要素として添加され得、または、互いに連結して、ダウンコンバート粒子からの発光の際の光開始剤の活性化の尤度を増加させることができる。ダウンコンバート粒子への光開始剤の連結は、ダウンコンバート粒子の発光特徴を妨げない限り(赤色または青色方向でのピーク発光の潜在的な僅かな移動以外)、また、硬化性接着剤組成物の重合を開始させる光開始剤の能力を妨げない限り、いずれの従来の化学によってなされてもよい。2つ以上の蛍光体、2つ以上の光開始剤、または両方の組み合わせを使用して、より複雑な硬化反応速度論を達成させてもよい。さらに、上記に記述されている種々の無機ダウンコンバータよりもむしろ、有機ダウンコンバータ、例えば、アントラセンを使用することができる。有機ダウンコンバータにより、限定されないが、硬化性接着剤組成物における別個の要素としての有機ダウンコンバータ材料の使用、上記の無機ダウンコンバータ粒子について記載されている、光開始剤への有機ダウンコンバータの連結、または硬化性接着剤組成物のモノマー要素の1つ以上への有機ダウンコンバータ基の組み込みを含めたさらなる可能性が存在する。
a.光開始剤の感受性の範囲でX線からUVまで特有のダウンコンバート粒子を添加することによる既存の接着剤の修飾
ナノサイズ粒子の表面積(及びゆえに全表面エネルギー)が非常に大きいため、粘度は、少量のナノサイズ粉末の添加によって迅速に上昇する。これは、添加され得るフィラーの量を制限する。一方で、これは、X線エネルギー下、蛍光体によって放出されるUVの強度を制限する。他方で、達成され得る制限されたフィラー投入は、経済的に良好ではない、なぜなら、フィラーは、典型的には、ベースの樹脂及び触媒よりも高価でないからである。さらに、ナノサイズ粒子の添加による粘度増加が過剰になり、これにより、ある特定の適用カテゴリーへの接着剤の使用が制限されるが他のカテゴリーは制限されない。大部分の接着剤適用において、可能であれば、ミクロンサイズ粒子を使用することが良好である。先に述べているが、最も良好な形態には、ナノ及びミクロンサイズ粒子の混合物からなるバイモーダル粒径分布が要求される。
コスト効果的なダウンコンバータであるミクロンレベル粒子の使用を必要とする用途において、シリカから作製されたキャリア粒子の表面は、ナノメータ粒径を有する望ましい蛍光体で装飾されていてよい。蛍光体は、X線下での正しい発光UV波長及び強度のために選択される。
ダウンコンバート粒子は、例えば、X線からUVまでの好適なダウンコンバージョン範囲を有する量子ドットであり得る。ダウンコンバージョンプロセスに使用される量子ドット及び/または酸化物は、プラズモン活性のために調整された、元素、または、化合物もしくは元素の合金をさらに含むことができる(図12を参照されたい)。好ましい実施形態において、量子ドットは、好ましくは、硫化亜鉛及びセレン化亜鉛の混合物を、より好ましくは、60%の硫化亜鉛、40%のセレン化亜鉛から70%の硫化亜鉛、30%のセレン化亜鉛の組成ウインドウ内の範囲で含む。プラズモニクスに使用される金属合金は、より好ましくは、60%の銀及び40%の金から70%の銀及び30%の金までの組成ウインドウ内の銀/金混合物を含む。
本発明は、ダウンコンバート特性を有するナノ粒子に光開始剤を連結することによる、既存の光開始剤の変更された使用についての特有の規定を包含する。光開始剤へのナノ粒子のこの近接近は、光開始または光触媒反応の機会を最大にし、改善された硬化効率を達成させることができる。(図14を参照されたい)
より明るい粒子を得ることは、2層の蛍光体で装飾されたキャリア粒子を有することによってなされ得る。まず、キャリア粒子がナノサイズの蛍光体で装飾され(図16A)、次いで、ゾルゲル誘導シリカを使用してコーティングされ、最後に、正確なサイズの蛍光体で2回目の装飾がされる(図16B)。この技術が繰り返されて、キャリア粒子の外層で、より多くの蛍光体またはダウンコンバージョン粒子を得ることができる。
接着は、機械的連動、吸着、静電気、拡散、弱い境界層、酸塩基、化学物質(共有結合性結合)などを含めた種々の因子を通して発生する。概して、ジョイント領域での表面ムラ及び空隙率が大きいほど、ジョイント強度が高くなる。接着剤のサイズの適合性及び被着体における隙間が大きいほど、結合強度が高くなり得る。表面の粗さは、ジョイント強度を増加または減少させ得る。
本発明における典型的な使用方法の1つの実施形態は、図62に要約され得る。
図においてナンバリングされているアイテムのリスト:
10:等方導電性ポリマー球体
10’:等方導電性ポリマー球体−部分的に平坦化
11:等方導電性のUVまたは可視光放出ポリマー球体
11’:等方導電性のUVまたは可視光放出ポリマー球体−部分的に平坦化
20:ポリマーコア
20’:ポリマーコア−部分的に平坦化
22:ニッケルめっき
22’:ニッケルめっき−部分的に平坦化
24:金めっき
24’:金めっき−−部分的に平坦化
26:ダウンコンバート光子放出体コーティング
26’:破砕ダウンコンバート光子放出体コーティング
28:フリップチップデバイス
30:基板
32:フリップチップデバイスバンプ
32’:基板半田バンプ
34:マトリクスエポキシ樹脂
35:X線活性化された、UVまたは可視光硬化性等方導電性接着剤(ACA)エポキシ
36:ポリマーコーティング
36’:破砕ポリマーコーティング
38:ダウンコンバート光子放出体
39:ウェハアライナ及びボンダ
40:上部集積回路(IC)ウェハ
41:底部集積回路(IC)ウェハ
42:スルーシリコンビア(TSV)コンタクト
44:真空板
46:スプリットフィールドプリズム及びレンズデバイス
47:固定されたレンズペア
48:印加された力
49:上部ウェハアライメント基準
49’:底部ウェハアライメント基準
50:X線露光デバイス
51:多重アライメント基準
52:X線撮像検出器
60:接着剤材料
60−1:液体封止材(アンダーフィル)
60−2:液体封止材(ノンフローアンダーフィル)
60−3:液体封止材(グロブトップ)
60−4:液体封止材(ダム)
60−5:液体封止材(成形)
60−6:熱伝導性接着剤
60−7:適切な樹脂ならびに適切な蛍光体及び光開始剤を含むフィルム接着剤
60’:スクリーン印刷のための修飾されたレオロジーによる接着剤ビーズ
60”:接着剤フィレット
70:接着剤分配器
72:基板
72’:PCB
72”:高密度回路
73:UV源
74:スペーサ要素
75:コンピュータ制御
76:機械駆動
77:機械アーム
78:機械カップリング
79:プラテン
79’:真空ポート
79”:サーモード
80:複合体基板
81:PET要素
82:X線源
100:ウェルジョイント特徴
101:突出部片
102:PET中の流体チャネル
102’:LCP中の流体チャネル
130:ピックアンドプレース
131:真空
132:接触パッド
132’:ワイヤボンド
133:金属リッド
133’:ガラスリッド
134:フレキシブル回路
140a:射出成形特徴を有するプラスチック
140b:鏡像射出成形特徴を有するプラスチック
140c:ボンディングされたプラスチック
150:ウェルを有するPETプラスチック
150’:液晶ポリマー
1.(任意選択的)表面調製−表面は、形成される接着剤が表面にボンディングし得る状態で配置されなければならない。この調製には、限定されないが、アルコール拭き取り、プラズマ処理、酸もしくは塩基処理、物理的アブレーション、または粗面化を含めた種々の異なる方法が含まれ得、表面調製の詳細な概説を与えている。
2.基板への接着剤の適用−接着剤は、プレ硬化接着剤組成物の粘度に応じて、任意の所望の方法を使用して適用され得る。
3.(任意選択的)品質の分配に関しての適用された接着剤の光学的な検査−これは、確実に、接着剤を適切に適用するためである(均等にコーティングする、滴状または線状などに適用する、など)。この工程は、接着剤と、これが適用される基板との間に視覚コントラストがあることを好ましくは必要とする。かかるコントラストは、1つ以上の従来の着色剤を接着剤に適用することを通して、または硬化の際に色を変化させる色変化接着剤の使用を通して与えられ得る。
4.硬化のための基板の配置−これにより、一緒に接着される片が、適切なアライメントにあるようにする。
5.X線を使用した硬化及び最終検査の実施
6.(任意選択的)自動化ラインにおけるリアルタイム閉ループフィードバックの付与(オープンリール式または自動化の島を介して)。これは、大量生産においてかなり早くに欠陥が検出されることを可能にし、これにより、片のミスアライメントまたは不完全な硬化に起因する廃棄を最小にする。
任意選択的要素は、所望の機能、例えば、硬化ポリマーの導電性及び誘電特性の変更を実施するための種々の有機または無機材料及び添加剤を含んでいてよい。これらの要素の多くが当業者に周知である。
異方性導電ポリマー球体の一例を図17の10に概して表す。この例において、球体は、めっき金24、及び別の、より脆性の、薄いポリマーコーティング外層36の下のめっきニッケル薄層22によって包囲されている弾性ポリマーコア20からなる。当該分野において周知されているように、等方導電性接着剤(ACA)は、5ミクロンの見かけ直径を有するおよそ4%の導電性ポリマー球体で充填されている迅速な(スナップ硬化)熱硬化性エポキシ樹脂から製造され得る。ポリマー球体は、圧縮されたときに弾性変形して、外側の金めっき表面を露出させ、これが、次いで、積層ICチップ、ウェハまたは他の基板の配列された接触パッド間の狭いギャップを横断して電気的導通を確立させることができるように設計されている。
本発明の樹脂または接着剤組成物は、種々の方法で導電性にされ得る。導電性フィラーの使用が上記で考察されており、本発明の樹脂または接着剤組成物を導電性または半導性組成物とするための1つの方法である。本発明の樹脂または接着剤組成物の代替の実施形態は、組成物を導電性にするための添加剤として導電性ポリマー球体を使用する。導電性ポリマー球体の使用は、どの型のポリマー球体が使用されるかに応じて、等方または異方導電性を組成物に付与することができる。異方性ポリマー球体添加剤の使用の場合、得られる組成物は、圧力単独の印加、または圧力及びX線の印加によって、異方導電性(すなわち、1つの面において、または1つの軸に沿っては導電性であるが、直交する面または軸においては非導電性である)にされ得る。
外的に印加された力を使用して表面が圧縮して保持されながら、熱硬化エポキシが、外力が除去された後に圧縮の状態で導電性ポリマー球体を維持するために迅速に硬化される。熱硬化エポキシは、適切な熱源、例えば、カートリッジヒータ、マイクロ波もしくは超音波発生器、IR加熱ランプ、レーザー線によって、またはボンディングされている表面に熱を印加する種々の他の手段によって、存速に硬化され得る。しかし、熱は、エポキシの迅速な硬化を達成するために概してかなり高く(>250℃)しなければならず、また、多くの場合、当該熱は、力の印加を達成するのに使用される表面、ならびに、共にボンディングされているチップ及び/または基板を通して伝導される必要がある。電気的かつ機械的にボンディングされている材料が、それらの特徴的な熱膨張係数(CTE)において有意な差を示すとき、エポキシが硬化されて材料が室温に戻った後、高い状態の剪断応力がこれらの表面間に存在し得る。この剪断応力は、配列された接触パッド間の電気的導通の早期の不良につながり得るため、望ましくない。この問題は、ボンディングされている材料間で相対的なサイズに大きな差があるときに、より顕著である。
室温での迅速な接着剤硬化のための1つの可能な解決策は、上記のACA接着剤を製造するための紫外線(UV)硬化性または可視光硬化性接着剤の置き換えである。いくつかの文献には、この問題に関して書かれているが、基本的な問題は、マイクロ電子アセンブリで一般に遭遇する、光学的に不透明な表面を通して十分な(硬化)UVまたは光エネルギーに接着剤を暴露させようとするときに生じる。適切なUVまたは可視光照明なしでは、エポキシが完全に重合し得ない。いくつかの製造者が、UVエネルギーで部分的に硬化し続いて最終的に熱硬化することが可能になるエポキシ内で特性を組み合わせることによって、この状況を是正しようとしている。しかし、ACA用途のための理想的なUVまたは光硬化性エポキシは、外部のUVもしくは可視光源またはさらなる熱硬化工程を必要とすることなく完全に硬化され得ると、実現されよう。
上記のUV接着剤ボンディング技術を商業的に実行するために、UVまたは可視光硬化性接着剤を(インサイチュで)活性化するために正確なX線露光量を安全に与え、同時に、同じX線エネルギーを使用して、得られる硬化ボンド部を画像化及び記録するように企図された機器を有することが望ましいようである。好適なX線アライナ及びボンダのいくつかの例が図24A〜C、25A〜C及び26A〜Cに部分的に示されている。
混合の順序を調査した。種々の混合順序が作動可能である。しかし、調製の好ましい実施形態は、樹脂材料を80℃に加熱すること、続いて、光開始剤を添加すること、及び混合することによって得られる。樹脂及び光開始剤の混合及び加熱は、クリアな(気泡不含)溶液が得られるまで継続される。混合は、樹脂及び光開始剤の剪断を回避するように穏やかになされる。加熱は、この工程において著しい影響を及ぼすことが分かった。蛍光体は、3番目に添加され、続いて混合される。この場合、混合は、蛍光体がフィラー材料を添加する前に溶液内でよく分散されるまで継続される。ミクロンスケールの粒径分布を有する蛍光体材料が最も良好である。フィラー材料は最後に添加される。最も良好な形態において、フィラー材料は、Y2O3:Gdナノ粒子、及び分割量のAerosil(または活性シリカ)である。ナノスケール粒径におけるフィラー材料が最も良好に機能した。この場合、Y2O3:Gdが5〜60nmの粒子からなること及びAerosil材料がファイバ様形態を有していることに注意することが興味深い。また、Y2O3:Gd粒子が集塊し得、ミクロンレベルの凝集体を形成し得ることに注意することも興味深い。これらの凝集体が何を助け得るかについての解決策は明らかでない。
第1基板は所定の位置に位置付けられる。基板の箇所及び機械的登録が記録される。接着剤は次いで第1基板に適用される。接着剤は、第1基板の上部におけるビーズパターンを解像する造影剤を含有していてよい。かかる場合において、黒色である第1基板は、黒色である接着剤色を有するべきではない。白色またはオフホワイト色のビーズがより好適であり得る。TiO2のような白色剤が造影剤として使用され得る。この場合、基板の色は関連せず、また、検査がX線放射線を使用して実施され得るため、ビーズの検査は、可視の色の対比に関わらず簡単になされ得る。
(図24A及び24Bに記載されている方法を使用して)ウェハアライメントが完了した後、ウェハがクランプ治具88を使用して一緒にクランプされる。クランプ治具は、ウェハが輸送の際にアライメントされたままであることを可能にする。クランプ治具は、典型的にはウェハの除外領域内の深さでウェハ裏面においてウェハに接触する。ウェハは、図38A及び図38Bに示されているように回転アーム87を用いて回転台89に配置され得る。回転台は、最大40kNまでの圧力に耐えることが可能である。圧力は、2つの鏡像回転台を使用して印加され得る。クランプ治具88は、2つの回転台が嵌合されたら除去され得る。
クリーンルーム用の非接触設計(図41〜42を参照されたい)
容器は上下に持ち上げられて、処理チャンバに入るアセンブリ160をゲーティングすることができる。キャビティ90’の部分は、持ち上げられて、アセンブリ160のバッチ化を可能にし得る。
複合パネル80に接着剤60が分配される。金属締結部110は、空気圧で駆動されるピックアンドプレースシステム(112)を使用して基板80の上部に配置される。ピックアンドプレース112及び接着剤分配器111は、両方が、KUKAロボット113に搭載されている。X線源82は、ボルト110の底部にカップリングする僅かな角度で配置されている。
以下の図は、パッケージング及び封入に関する,半導体における種々の用途を示す。これらとして、グロブトップ、ダムアンドフィル、成形(PMC、挿入成形)及びフリップチップアンダーフィルが挙げられる。
IC28は、バンプ32が電気パッド132と電気接触するように所定の位置に半田付けされる。望ましい接着剤60−1は、分配システム70によって適用される(図44を参照されたい)。基板が室温の20℃上まで加熱されると、接着剤は、チップと基板72との間に設定された毛管力によりチップ下にウィッキングされる。接着剤がIC下に分配及びウィッキングされたら、接着剤は、硬化する準備が整い、任意選択的に、硬化の前に検査が実施される。標準方法は、光学的手段を使用して接着剤を検査することである。しかし、接着剤60−1にはX線領域に吸収特性を有する蛍光体が投入されているため、検査は、X線放射線を使用して実施され得る。X線を使用する検査は、IC28下に存在し得る任意のストライエーションを明らかにすることができる。接着剤の均一性は、接着剤が樹脂豊富なまたは樹脂不十分な領域に分離しているか否かを見て決定され得る。接着剤は、続いて、X線で硬化され得る。
基板が高密度回路(72”)であるとき、同様のプロセスが適用され得る。アセンブリが形成されたら、アセンブリは、半田バンプ(32’)を使用してPCまたはサーバのマザーボードに配置され得る。このプロセスは、ロジックアセンブリ(例えば、マイクロプロセッサ及び高密度相互接続デバイス)を搭載するために使用されるものと同様である。図45は種々の要素を示す。
接着剤ウィッキングの際に起こる時間遅延と、IC(28)を基板(72’)上に接続するための半田付けプロセスとの組み合わせを回避するために、封止材(60−2)が、接触パッド(132)のエリアアレイの上の基板(72’)の上部に分配され得る。図46を参照されたい。光学検査が実施される。チップは、真空(131)に関する規定を有するプログラミング可能な「ピックアンドプレース」(130)を使用して採取される。アクティブアライメントは、チップが、ICバンプ(32)がPCB電気パッド(132)と電気接触するようにPCB(72’)上に設置される前に、実施される。ノンフロー接着剤は、X線を使用して検査及び硬化され得る。
グロブトップアプリケーションは、PCB(72’)上にダイ取り付けされてワイヤボンディングされ、IC(28)のアクティブエリアとPCB基板(72’)に設けられている電気パッド(132)との電気接触を確立したIC(28)の上部に電子ポリマーを分配することを含む。図47を参照されたい。適切な蛍光体及び光開始剤を含有する特有の接着剤(60−3)が、IC(28)に適用され得、十分な時間により、電子ポリマーが流動してIC(28)及びワイヤボンド(132’)を被覆することを可能にする。アセンブリが次いでX線放射線を使用して検査され、X線放射線処理またはレジピを使用して硬化される。X線処理は、アセンブリへのいずれのダメージも誘発することなく接着剤を硬くするのに適切な制御可能な継続期間のパルスからなり得る。
いくつかの用途において、ダム(60−4)または第1接着剤ビーズを適用し、続いて、第1ビーズを硬化した後に、X線硬化に必要とされる適切な蛍光体及び光開始剤を含有する封止材(60−1)を分配することが有利である。現在の技術は、X線放射線を使用した、60−1及び60−4の両方の同時硬化を可能にする。図48を参照されたい。配合物60−4に投入される蛍光体の量は、60−1よりも速く硬化するように意図的に高くされ得る。
封入を適用する別の標準方法は注入成形によるものである。樹脂をモールドレベルで適用する。この場合、IC(28)が基板(72”)に取り付けられ、次いで、モールド内に挿入される。モールドが次いで高圧でクランプされ、高温の液体樹脂が高圧で射出されてワイヤボンド(132’)とIC(28)との間の空間を満たす。図49を参照されたい。射出成形工程は、次いで、伸長した熱処理によって達成される。本発明は、適切な蛍光体及び光開始剤を含有する低粘度樹脂(60−5)の使用を通して可能になる。低温での射出成形が実施された後、X線検査及びX線硬化が行われ得る。本発明を使用する利益は様々であるが、最も顕著な利益は、後成形で確立され得る全ての応力を解放することである。これにより、応力解放に必要とされる大部分の熱アニーリング工程が排除される。これらの応力解放工程は、最大4時間かかる可能性があり、進行中の作業を増加させ、経済面では良好にならない。
半導体及びMEMSに関連する別の適用は、リッドシールである。図50A及び50Bを参照されたい。この適用において、3つの異なる接着剤が使用され得る。3つの異なる接着剤:1−接着剤ビーズ(60)、2−アンダーフィル接着剤(60−1)、及び3−IC28をリッド133に接続する熱伝導性接着剤(60−6)、の組み合わせが使用され得る。半導体では、リッド133が典型的には金属製である。MEMS用途では、リッド133’はガラスであり得る。
マイクロボールグリッドアレイは、グロブトップ封入に関して記載されているものとほぼ同じ方法で封入され得る。アセンブリの構成はチップオンボード適用と異なるが、ワイヤボンド132’の封入は依然同じである。(図51を参照されたい)適切な粘度での適切な封入60−3は、X線下で硬化するような量の光開始剤及び蛍光体を含有するように調製される。
テープ自動ボンディング(TAB)技術は、現出願によって向上され得る。TABは、フレキシブル回路134を半導体IC(28)に電気的に接続するのに使用される。図52を参照されたい。フレキシブル回路は、電気パッド132を含有する。封止材60−3は、TAB領域に設けられ得る。封止材の適用に続いて次いでX線検査及び硬化となる。
鏡像特徴を有するプラスチック部分140−aからプラスチック部分140−bへの接続は、流体を収容し、かつ、流体を容器の一方の側から他の側に向かわせることができる使用可能な流体チャネルを有する機能性プラスチック容器を構築するのに使用され得る。接続可能な特徴を有する2片のプラスチックは、フィルム接着剤60−7を使用して共に接続されて片140cを形成する。(断面図を示す)。フィルム60−7は、適切な樹脂ならびに適切な蛍光体及び光開始剤を有する。形成されるプラスチックハウジングは、部140dとして示されている(上面図)。図53を参照されたい。
インクジェットカートリッジは、例えば基材として、熱可塑性成形用樹脂、例えばポリエチレンテレフタレート(PET)、ポリエチレン、またはポリスルホンからできているプラスチックハウジングから典型的にはできている。ポリスルホンは、靱性、機械的安定性及びインク耐性を有する熱可塑性ポリマーのファミリーを記載する。
ファイバエレメント91は、種々の形状をとるように直線状であっても可撓性であってもよい。ファイバエレメントは、そのコアの周囲に、かつ、UV光の伝播方向に沿ってUVエネルギーを漏洩する。光がその端部からカップリングされると、当該光は、ファイバに沿って伝播して、その環境にUV光を漏洩する。(図56A及び56Bを参照されたい)
CaWO4蛍光体及びCaWO4:Pbは、X線エネルギー下において、可視及びUVAで発光する。これらの蛍光体は、両方が、評判の悪い遅い減衰時間を有する。この蛍光体は、開始エネルギーが停止した後でも可視及びUV光を放出し続ける。この放出は、X線エネルギー照射が停止した後60〜100秒間にわたって強いままである。
本発明接着剤はまた、層状複合体の基本的な構成単位である、2つ以上のプライの接着によって、複合体の形成においても使用され得る。複合体は、プライを層状にすることによって構築され得、プライが本発明の接着剤組成物を使用して一方から他方に接着されている。任意の従来のプライ、例えば、−45+45アセンブリ(図59A及びBを参照されたい)、0+90複合体(図60A及びBを参照されたい)が調製され得る。
本発明の接着剤組成物は、代替的には、ネガ型またはポジ型のいずれかのフォトレジスト現像を達成するための硬化性樹脂としてフォトリソグラフィにおいて使用され得る。重金属マスク要素の使用により、本発明組成物の選択的硬化を達成して所望のパターンまたは半導体素子を形成することが可能である。素子が導電性であることが望ましいとき、接着剤組成物は、所望により、導電性フィラーによってドーピングされていてよい。
半導体集積回路(IC)デバイスの製造において、ICデバイスは、多くの場合、ICデバイスに取り付けられた半田ボールを使用して基板に導電的に取り付けられ、次いで、半田ボールが、基板に取り付けられた導電性電気パッドに設置される。図63A〜Gは、ICデバイスと電気パッドとの間の高い導電性を維持しながら、かかる半田ボール及び半田マスクの使用を代用するような方法における本発明の接着剤及び導電性樹脂組成物の一使用の代表を提供する。図63Aにおいて、半導体IC(300)、例えば、ロジックまたはメモリデバイス、システムチップまたはオプトエレクトロニクスデバイスに存在するもの、特に、GaInNAsまたはGaAsをベースとするデバイスは、半導体IC(300)の片側に取り付けられた突出部(301)と他の場合には称される、複数の「バンプ」、「ピン」または「フィート」を有し、ここで、突出部(301)は、導電性硬化性樹脂、好ましくは、本発明の金属銀フレーク及びエネルギーコンバータを含有する導電性硬化性樹脂、最も好ましくは、本発明の金属銀フレーク及びエネルギーコンバータを含有する導電性硬化性エポキシから形成されている。アイテムにおける突出部(301)という用語には、限定されないが、上記のアイテム32:フリップチップデバイスバンプ、及び32’:基板半田バンプが含まれる。複数の突出部(301)は、いずれの所望の方法を通して半導体IC(300)に適用されてもよい。好ましくは、突出部(301)は、特定のデバイスの所望の箇所に突出部(301)を配置するために、ジェッティング、スクリーン印刷、電解めっき、または別の分配手段によって適用され得る。突出部(301)は、2つの例に言及するのに望ましいパターン、例えば、エリアアレイまたはペリメータアレイ構成に追随し得る。
Claims (27)
- 基板に取り付けられた半導体デバイス
を含む電子部品であって、
前記半導体デバイスは、前記基板上にある複数の電気パッドと電気接触するように構成されている、前記半導体デバイスの一方の側に取り付けられた複数の剛性突出部を通して前記基板に取り付けられており、
前記複数の剛性突出部は、
少なくとも1つの重合可能なモノマーを含む有機ビヒクルと、
選択された光波長に応答する少なくとも1つの光開始剤と、
選択された付与放射線に暴露されたときに前記の光波長を放出するように選択された少なくとも1つのエネルギー変換材料と、
を含む第1硬化性樹脂または接着剤組成物から形成されていて、
その結果、前記選択された付与放射線の印加の際に、前記第1硬化性樹脂または接着剤組成物が硬化されて、前記半導体デバイスと前記基板上の前記複数の電気パッドとの間に前記剛性突出部を与えるようになっている、前記電子部品。 - 前記複数の剛性突出部が導電性である、請求項1に記載の電子部品。
- 前記半導体デバイスと基板との間、及び前記複数の突出部のそれぞれと電気パッドとの間に層を形成するアンダーフィル材料をさらに含み、前記アンダーフィル材料が、
少なくとも1つの重合可能なモノマーを含む有機ビヒクルと、
選択された光波長に応答する少なくとも1つの光開始剤と、
選択された付与放射線に暴露されたときに前記の光波長を放出するように選択された少なくとも1つのエネルギー変換材料と
を含む第2硬化性樹脂または接着剤組成物から形成された第2の硬化樹脂を含む、請求項1に記載の電子部品。 - 前記複数の突出部を有する前記の側とは反対の前記半導体要素の側に取り付けられた金属ヒートシンク層をさらに含み、前記金属ヒートシンク層が、
少なくとも1つの重合可能なモノマーを含む有機ビヒクルと、
選択された光波長に応答する少なくとも1つの光開始剤と、
選択された付与放射線に暴露されたときに前記の光波長を放出するように選択された少なくとも1つのエネルギー変換材料と、
を含む第3硬化性樹脂または接着剤組成物から形成された第3の硬化樹脂を使用して前記半導体要素に取り付けられており、
前記第3の硬化樹脂が熱伝導性である、請求項1に記載の電子部品。 - 前記第3の硬化樹脂が、前記第3の硬化樹脂に粒子を含むことによって熱伝導性とされ、前記粒子が、金属粒子及び金属窒化物粒子からなる群から選択される、請求項4に記載の電子部品。
- 粒子が金属窒化物粒子である、請求項5に記載の電子部品。
- 前記金属窒化物粒子が、AlN及びBNからなる群から選択されるメンバーである、請求項6に記載の電子部品。
- 前記複数の突出部を有する前記の側とは反対の前記半導体要素の側に取り付けられた金属ヒートシンク層をさらに含み、前記金属ヒートシンク層が、
少なくとも1つの重合可能なモノマーを含む有機ビヒクルと、
選択された光波長に応答する少なくとも1つの光開始剤と、
選択された付与放射線に暴露されたときに前記の光波長を放出するように選択された少なくとも1つのエネルギー変換材料と、
を含む第3硬化性樹脂または接着剤組成物から形成された第3の硬化樹脂を使用して前記半導体要素に取り付けられており、
前記第3の硬化樹脂が熱伝導性である、請求項2に記載の電子部品。 - 前記第3の硬化樹脂が、前記第3の硬化樹脂に粒子を含むことによって熱伝導性とされ、前記粒子が、金属粒子及び金属窒化物粒子からなる群から選択される、請求項8に記載の電子部品。
- 粒子が金属窒化物粒子である、請求項9に記載の電子部品。
- 前記金属窒化物粒子が、AlN及びBNからなる群から選択されるメンバーである、請求項10に記載の電子部品。
- 前記複数の突出部を有する前記の側とは反対の前記半導体要素の側に取り付けられた金属ヒートシンク層をさらに含み、前記金属ヒートシンク層が、
少なくとも1つの重合可能なモノマーを含む有機ビヒクルと、
選択された光波長に応答する少なくとも1つの光開始剤と、
選択された付与放射線に暴露されたときに前記の光波長を放出するように選択された少なくとも1つのエネルギー変換材料と、
を含む第3硬化性樹脂または接着剤組成物から形成された第3の硬化樹脂を使用して前記半導体要素に取り付けられており、
前記第3の硬化樹脂が熱伝導性である、請求項3に記載の電子部品。 - 前記第3の硬化樹脂が、前記第3の硬化樹脂に粒子を含むことによって熱伝導性とされ、前記粒子が、金属粒子及び金属窒化物粒子からなる群から選択される、請求項12に記載の電子部品。
- 粒子が金属窒化物粒子である、請求項13に記載の電子部品。
- 前記金属窒化物粒子が、AlN及びBNからなる群から選択されるメンバーである、請求項14に記載の電子部品。
- 請求項1〜15のいずれか一項に記載の電子部品を含むパッケージングされたデバイスであって、前記金属ヒートシンク層が、前記半導体デバイスのエッジを超えて延在しており、また、前記基板から前記金属ヒートシンク層を支持して前記半導体デバイスを密閉シールする支持側に接続されている、前記デバイス。
- 前記金属ヒートシンク層の少なくとも一部が、前記半導体要素によって受容または透過される光の1つ以上の波長に透明であるウインドウによって置き換えられている、請求項16に記載のパッケージングされたデバイス。
- 少なくとも1つの支持側の少なくとも一部が、前記半導体要素によって受容または透過される光の1つ以上の波長に透明であるウインドウによって置き換えられている、請求項17に記載のパッケージングされたデバイス。
- 少なくとも1つの支持側の少なくとも一部が、前記半導体要素によって受容または透過される光の1つ以上の波長に透明であるウインドウによって置き換えられている、請求項16に記載のパッケージングされたデバイス。
- 請求項1の電子部品を含む封入された半導体デバイスであって、少なくとも前記基板、突出部及び電気パッドを封入するグロブトップを有する、前記半導体デバイス。
- 前記グロブトップが、
少なくとも1つの重合可能なモノマーを含む有機ビヒクルと、
選択された光波長に応答する少なくとも1つの光開始剤と、
選択された付与放射線に暴露されたときに前記の光波長を放出するように選択された少なくとも1つのエネルギー変換材料と、
を含む硬化性樹脂または接着剤組成物を硬化することから形成されている、請求項20に記載の封入された半導体デバイス。 - 前記グロブトップが高い光透過率を有する、請求項20に記載の封入された半導体デバイス。
- 前記少なくとも1つのエネルギー変換材料が、所望の光透過率を有するグロブトップを与えるために、前記の硬化樹脂または接着剤組成物の所望の透過率波長より小さい粒径を有する、請求項21に記載の封入された半導体デバイス。
- 前記少なくとも1つのエネルギー変換材料が、400nm以下の粒径を有する、請求項23に記載の封入された半導体デバイス。
- 光学的に透明な樹脂または接着剤組成物であって、
重合の際、光学的に透明な樹脂または接着剤を形成する少なくとも1つの重合可能なモノマーを含む有機ビヒクルと、
選択された光波長に応答する少なくとも1つの光開始剤と、
選択された付与放射線に暴露されたときに前記の光波長を放出するように選択された少なくとも1つのエネルギー変換材料であって、前記の硬化した光学的に透明な樹脂または接着剤を通して透過される所望の透過率波長未満の粒径を有している、前記少なくとも1つのエネルギー変換材料と
を含む、前記光学的に透明な樹脂または接着剤組成物。 - 前記少なくとも1つのエネルギー変換材料が、400nm以下の粒径を有する、請求項25に記載の光学的に透明な樹脂または接着剤組成物。
- 導電性樹脂または接着剤組成物であって、
重合の際、導電性樹脂または接着剤を形成する少なくとも1つの重合可能なモノマーを含む有機ビヒクルと、
選択された光波長に応答する少なくとも1つの光開始剤と、
選択された付与放射線に暴露されたときに前記の光波長を放出するように選択された少なくとも1つのエネルギー変換材料と、
を含み、
その結果、形成される前記樹脂または接着剤組成物が、導電性添加剤の存在なしに導電性または半導電性を示す、前記導電性樹脂または接着剤組成物。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/459,907 | 2017-03-15 | ||
US15/459,907 US10283476B2 (en) | 2017-03-15 | 2017-03-15 | Adhesive bonding composition and electronic components prepared from the same |
PCT/US2018/022669 WO2018170286A1 (en) | 2017-03-15 | 2018-03-15 | Adhesive bonding composition and electronic components prepared from the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020519000A true JP2020519000A (ja) | 2020-06-25 |
JP7086095B2 JP7086095B2 (ja) | 2022-06-17 |
Family
ID=63519635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019550775A Active JP7086095B2 (ja) | 2017-03-15 | 2018-03-15 | 接着剤ボンディング組成物及びこれから作製される電子部品 |
Country Status (6)
Country | Link |
---|---|
US (3) | US10283476B2 (ja) |
EP (1) | EP3596184A4 (ja) |
JP (1) | JP7086095B2 (ja) |
KR (2) | KR102623783B1 (ja) |
CN (1) | CN110546228B (ja) |
WO (1) | WO2018170286A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3839572B1 (en) * | 2010-05-06 | 2023-10-18 | Immunolight, Llc. | Adhesive bonding composition and method of use |
JP2018144325A (ja) * | 2017-03-03 | 2018-09-20 | キヤノン株式会社 | 樹脂層表面の押圧方法 |
US10283476B2 (en) | 2017-03-15 | 2019-05-07 | Immunolight, Llc. | Adhesive bonding composition and electronic components prepared from the same |
KR102038228B1 (ko) * | 2018-07-31 | 2019-10-29 | 도레이첨단소재 주식회사 | 색변환 시트 및 이를 포함하는 백라이트 유닛 |
US11107790B2 (en) * | 2018-09-03 | 2021-08-31 | Electronics And Telecommunications Research Institute | Laser bonding method |
DE102018126246A1 (de) * | 2018-10-22 | 2020-04-23 | Osram Opto Semiconductors Gmbh | Verbesserung der klebstoffschicht bei led flipchip anwendungen |
AU2020233571A1 (en) | 2019-03-04 | 2021-11-04 | Immunolight, Llc | Energy augmentation structures for use with energy emitters and collectors |
US11163151B2 (en) * | 2019-05-17 | 2021-11-02 | Microsoft Technology Licensing, Llc | Anisotropic conductive adhesive bond in a piezoelectric micro-electro-mechanical system scanning mirror system |
US11557692B2 (en) | 2019-06-11 | 2023-01-17 | Meta Platforms Technologies, Llc | Selectively bonding light-emitting devices via a pulsed laser |
US11201200B2 (en) * | 2019-08-23 | 2021-12-14 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
JP7342579B2 (ja) * | 2019-09-30 | 2023-09-12 | 日本ゼオン株式会社 | 積層体及びその製造方法 |
TWI703921B (zh) * | 2019-10-01 | 2020-09-01 | 十銓科技股份有限公司 | 散熱裝置 |
CN114080677A (zh) | 2019-10-15 | 2022-02-22 | 三星电子株式会社 | 显示模块及其制造方法 |
US20210134690A1 (en) * | 2019-11-01 | 2021-05-06 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages and methods of manufacturing the same |
CN113441019A (zh) * | 2020-03-24 | 2021-09-28 | 中昊晨光化工研究院有限公司 | 一种聚四氟乙烯复合过滤材料及其制法与应用 |
CN115427134A (zh) * | 2020-04-21 | 2022-12-02 | 汉高股份有限及两合公司 | 可光固化的变色组合物和使用可光固化的变色组合物在膜表面上形成特征物的方法 |
JP7538955B2 (ja) * | 2020-09-29 | 2024-08-22 | イー インク コーポレイション | 電気光学ディスプレイおよびそれにおける使用のための低い熱感度を有する複合材料 |
CN112538333B (zh) * | 2020-12-10 | 2022-04-29 | 江西晨光新材料股份有限公司 | 一种双组分室温硫化硅橡胶及其制备方法和应用 |
KR20220100748A (ko) * | 2021-01-08 | 2022-07-18 | 삼성디스플레이 주식회사 | 잉크 평탄화 장치 및 이를 이용한 표시 장치의 제조 방법 |
CN113022091A (zh) * | 2021-02-13 | 2021-06-25 | 江南大学 | 一种基于近红外固化的胶黏剂的应用方法 |
WO2022232583A1 (en) * | 2021-04-29 | 2022-11-03 | Soliyarn, Llc | Producting coated textiles using photo-initiated chemical vapor deposition |
US20220347990A1 (en) * | 2021-04-29 | 2022-11-03 | GM Global Technology Operations LLC | Flexible sheet of polyethylene terephthalate and heat-activated adhesive, and thermal cooling structure using the same |
CN113486592B (zh) * | 2021-07-19 | 2023-09-01 | 中国水利水电科学研究院 | 一种考虑多因素影响的胶结料结构性能演化预测方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11145185A (ja) * | 1997-11-12 | 1999-05-28 | Jsr Corp | 半導体装置およびその製造方法 |
JP2000150575A (ja) * | 1998-11-13 | 2000-05-30 | Sony Corp | 半導体装置の実装方法および半導体装置組立体 |
JP2001176993A (ja) * | 1999-12-21 | 2001-06-29 | Kyocera Corp | 半導体素子収納用パッケージおよびその製造方法 |
US20120089180A1 (en) * | 2010-05-06 | 2012-04-12 | Duke University | Adhesive bonding composition and method of use |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5198541A (en) | 1987-08-11 | 1993-03-30 | New York University | Dna encoding bactericidal/permeability-increasing proteins |
US5847929A (en) | 1996-06-28 | 1998-12-08 | International Business Machines Corporation | Attaching heat sinks directly to flip chips and ceramic chip carriers |
US6580035B1 (en) | 1998-04-24 | 2003-06-17 | Amerasia International Technology, Inc. | Flexible adhesive membrane and electronic device employing same |
US6399178B1 (en) | 1998-07-20 | 2002-06-04 | Amerasia International Technology, Inc. | Rigid adhesive underfill preform, as for a flip-chip device |
US6646080B2 (en) | 2000-09-14 | 2003-11-11 | Dsm N.V. | Coating compositions for plastic substrates |
US6750266B2 (en) | 2001-12-28 | 2004-06-15 | 3M Innovative Properties Company | Multiphoton photosensitization system |
AU2003211368A1 (en) | 2002-03-07 | 2003-09-16 | Jsr Corporation | Anisotropic conductive connector and its production method, and circuit device test instrument |
JP2004177771A (ja) | 2002-11-28 | 2004-06-24 | Think Laboratory Co Ltd | ポジ型感光性組成物 |
WO2004070827A1 (ja) * | 2003-02-05 | 2004-08-19 | Senju Metal Industry Co., Ltd. | 端子間の接続方法及び半導体装置の実装方法 |
US7448734B2 (en) | 2004-01-21 | 2008-11-11 | Silverbrook Research Pty Ltd | Inkjet printer cartridge with pagewidth printhead |
GB2413306A (en) | 2004-04-23 | 2005-10-26 | Hewlett Packard Development Co | Ink cartridge having terminals and conductive tracks applied directly thereon. |
FR2869803B1 (fr) | 2004-05-10 | 2006-07-28 | Nanobiotix Sarl | Particules activables, preparation et utilisations |
US20060014309A1 (en) | 2004-07-13 | 2006-01-19 | Sachdev Krishna G | Temporary chip attach method using reworkable conductive adhesive interconnections |
US8376013B2 (en) | 2008-03-11 | 2013-02-19 | Duke University | Plasmonic assisted systems and methods for interior energy-activation from an exterior source |
KR101075265B1 (ko) * | 2009-04-24 | 2011-10-19 | 충주대학교 산학협력단 | 탄소섬유를 함유한 열전도성 점착제 조성물 및 이를 이용하여 제조한 점착 시트 |
KR101807325B1 (ko) * | 2009-09-07 | 2017-12-08 | 이데미쓰 고산 가부시키가이샤 | 도전성 조성물 |
US8498158B2 (en) * | 2010-10-18 | 2013-07-30 | Macronix International Co., Ltd. | System and method for controlling voltage ramping for an output operation in a semiconductor memory device |
KR102010799B1 (ko) * | 2012-01-13 | 2019-08-14 | 닛뽄 가야쿠 가부시키가이샤 | 광학 부재 및 그 제조에 사용하는 자외선 경화형 접착제 |
KR101766708B1 (ko) * | 2012-12-14 | 2017-08-09 | 후아웨이 테크놀러지 컴퍼니 리미티드 | 추출된 네트워크 자원 요건을 이용한 서비스 프로비저닝 |
WO2015138905A1 (en) * | 2014-03-14 | 2015-09-17 | Indium Corporation | Methods and compositions for forming solder bumps on a substrate with radiation curable or thermal curable solder flux |
ES2948676T3 (es) | 2014-03-18 | 2023-09-15 | Immunolight Llc | Composición de unión adhesiva mejorada y método de uso |
JP6361734B2 (ja) * | 2014-08-12 | 2018-07-25 | 三菱ケミカル株式会社 | 透明粘着シート |
WO2017035103A1 (en) * | 2015-08-25 | 2017-03-02 | Plant Pv, Inc | Core-shell, oxidation-resistant particles for low temperature conductive applications |
US10283476B2 (en) * | 2017-03-15 | 2019-05-07 | Immunolight, Llc. | Adhesive bonding composition and electronic components prepared from the same |
-
2017
- 2017-03-15 US US15/459,907 patent/US10283476B2/en active Active
-
2018
- 2018-03-15 CN CN201880025220.6A patent/CN110546228B/zh active Active
- 2018-03-15 JP JP2019550775A patent/JP7086095B2/ja active Active
- 2018-03-15 EP EP18768676.1A patent/EP3596184A4/en active Pending
- 2018-03-15 KR KR1020197029754A patent/KR102623783B1/ko active IP Right Grant
- 2018-03-15 WO PCT/US2018/022669 patent/WO2018170286A1/en unknown
- 2018-03-15 KR KR1020247000544A patent/KR20240007966A/ko not_active Application Discontinuation
-
2019
- 2019-01-18 US US16/252,060 patent/US10593642B2/en active Active
-
2020
- 2020-03-16 US US16/819,806 patent/US11476222B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11145185A (ja) * | 1997-11-12 | 1999-05-28 | Jsr Corp | 半導体装置およびその製造方法 |
JP2000150575A (ja) * | 1998-11-13 | 2000-05-30 | Sony Corp | 半導体装置の実装方法および半導体装置組立体 |
JP2001176993A (ja) * | 1999-12-21 | 2001-06-29 | Kyocera Corp | 半導体素子収納用パッケージおよびその製造方法 |
US20120089180A1 (en) * | 2010-05-06 | 2012-04-12 | Duke University | Adhesive bonding composition and method of use |
Also Published As
Publication number | Publication date |
---|---|
US20190157234A1 (en) | 2019-05-23 |
KR102623783B1 (ko) | 2024-01-10 |
EP3596184A1 (en) | 2020-01-22 |
US20180269174A1 (en) | 2018-09-20 |
US10593642B2 (en) | 2020-03-17 |
KR20240007966A (ko) | 2024-01-17 |
WO2018170286A1 (en) | 2018-09-20 |
US10283476B2 (en) | 2019-05-07 |
CN110546228A (zh) | 2019-12-06 |
EP3596184A4 (en) | 2021-04-21 |
US20200215611A1 (en) | 2020-07-09 |
US11476222B2 (en) | 2022-10-18 |
JP7086095B2 (ja) | 2022-06-17 |
KR20190122845A (ko) | 2019-10-30 |
CN110546228B (zh) | 2022-05-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7086095B2 (ja) | 接着剤ボンディング組成物及びこれから作製される電子部品 | |
US11270973B2 (en) | Adhesive bonding composition and electronic components prepared from the same | |
US12076579B2 (en) | Energy augmentation structures in adhesive bonding compositions | |
US11648750B2 (en) | Adhesive bonding composition and method of use | |
WO2007023834A1 (ja) | 接着剤組成物 | |
US20170096585A1 (en) | Improved adhesive bonding composition and method of use |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210308 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220216 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220221 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220414 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220509 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220607 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7086095 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |