CN110544654B - Silicon wafer processing device and method - Google Patents
Silicon wafer processing device and method Download PDFInfo
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- CN110544654B CN110544654B CN201910795184.8A CN201910795184A CN110544654B CN 110544654 B CN110544654 B CN 110544654B CN 201910795184 A CN201910795184 A CN 201910795184A CN 110544654 B CN110544654 B CN 110544654B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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Abstract
The invention provides a silicon wafer processing device and a processing method, wherein the processing device comprises: the device comprises a tank body, a first clamping device and a second clamping device, wherein a chamber for containing a treatment liquid is defined in the tank body; the bracket is arranged in the cavity to place a silicon wafer; the clamping mechanism is used for clamping the silicon wafer; a liquid level meter for detecting a liquid level of the processing liquid in the chamber; the control mechanism is used for controlling the clamping mechanism to clamp the part of the silicon wafer, which is exposed out of the treatment liquid, and moving the silicon wafer to be separated from the support when the treatment liquid in the tank body is discharged and the liquid level meter detects that the liquid level is lowered to a first liquid level; when the liquid level is the first liquid level, the silicon wafer partially exposes the treatment liquid and the contact part of the bracket and the silicon wafer does not expose the treatment liquid. The method has the advantages that moisture at the contact position of the silicon wafer and the support can smoothly leave the surface of the silicon wafer, the drying effect of the silicon wafer is improved, the risk of generating watermarks in the subsequent processing process is avoided, and the processing quality of the silicon wafer is improved.
Description
Technical Field
The invention relates to the field of silicon wafer processing, in particular to a silicon wafer processing device and a silicon wafer processing method.
Background
With the increasingly refined semiconductor elements, the requirements of the silicon wafer cleaning process are more and more strict, a drying step is arranged at the tail end of the cleaning process to prevent pollution caused by moisture adsorption of other particles in air, the drying mode is drying by a drying machine at first, the drying mode brings large particle contamination due to mechanical motion, the drying mode cannot be adopted in the 12-inch silicon wafer cleaning process, and an infrared heating mode is adopted, the drying mode does not cause contamination in the process due to mechanical motion, and the drying mode is a widely used mode. And a drying mode is adopted, and most of water can fall along with the liquid level in the process of slowly falling the water surface by utilizing the surface tension and the free energy of water, so that the effect of drying the surface of the silicon wafer is achieved. The water tank is internally provided with two or three silicon wafer support frames which are contacted with the silicon wafers, the moisture of the silicon wafers and the positions of the support frames in the water tank can not smoothly leave the surfaces of the silicon wafers in the liquid level descending process, the moisture exists on the parts of the surfaces of the silicon wafers in the subsequent processing process, the moisture retention time of the positions is too long, and when the silicon wafers have chemical atmosphere or unsatisfactory cleanliness in the subsequent movement track, the risk of generating watermarks can be caused, and the processing quality of the silicon wafers is influenced.
Disclosure of Invention
In view of the above, the invention provides a silicon wafer processing device and a silicon wafer processing method, which are used for solving the problems that moisture at the contact position of a silicon wafer and a support cannot smoothly leave the surface of the silicon wafer, so that the drying effect of the silicon wafer is poor, and watermarks are easily generated in the subsequent silicon wafer processing process.
In order to solve the technical problems, the invention adopts the following technical scheme:
in a first aspect, a silicon wafer processing apparatus according to an embodiment of the present invention includes:
the device comprises a tank body, a first clamping device and a second clamping device, wherein a chamber for containing a treatment liquid is defined in the tank body;
the bracket is arranged in the cavity to place a silicon wafer;
the clamping mechanism is used for clamping the silicon wafer;
a liquid level meter for detecting a liquid level of the processing liquid in the chamber;
the control mechanism is used for controlling the clamping mechanism to clamp the part of the silicon wafer, which is exposed out of the treatment liquid, and moving the silicon wafer to be separated from the support when the treatment liquid in the tank body is discharged and the liquid level meter detects that the liquid level is lowered to a first liquid level;
when the liquid level is the first liquid level, the silicon wafer partially exposes the treatment liquid and the contact part of the bracket and the silicon wafer does not expose the treatment liquid.
And a discharge structure for discharging the treatment liquid in the cavity is arranged on the groove body.
And a discharge port communicated with the cavity is formed in the bottom of the groove body and used for discharging the treatment liquid in the cavity.
And the control mechanism is used for controlling the discharge structure to stop discharging the treatment liquid and controlling the clamping mechanism to clamp the part of the silicon wafer, which is exposed out of the treatment liquid, and move along the vertical direction when the liquid level meter detects that the liquid level drops to the first liquid level, so that the silicon wafer is separated from the support.
When the liquid level meter detects that the liquid level drops to the first liquid level, the clamping mechanism moves the silicon wafer to be separated from the support along the vertical direction at a first speed, and the first speed is the same as the dropping speed of the liquid level of the processing liquid before the processing liquid drops to the first liquid level.
The control mechanism is used for controlling the clamping mechanism to stop moving and controlling the discharge structure to start discharging the treatment liquid after the silicon wafer is clamped and moved by the clamping mechanism and is separated from the support; and controlling the discharge structure to stop discharging the processing liquid when the silicon wafer is completely exposed out of the processing liquid.
In a second aspect, a method for processing a silicon wafer according to an embodiment of the present invention includes the steps of:
placing a silicon wafer on a bracket in a tank body and immersing the silicon wafer in the treatment liquid in the tank body;
discharging the treatment liquid in the tank body to expose part of the silicon wafer to the treatment liquid, wherein the treatment liquid is not exposed at the contact part of the bracket and the silicon wafer; or lifting the silicon wafer by adopting a lifting mechanism so as to expose part of the silicon wafer out of the treatment liquid, wherein the treatment liquid is not exposed at the contact part of the lifting mechanism and the silicon wafer;
and clamping the part of the silicon wafer, which is exposed out of the treatment liquid, and separating the silicon wafer from the treatment liquid.
Wherein the holding the portion of the silicon wafer exposed from the treatment liquid and the separating the silicon wafer from the treatment liquid comprises:
when the liquid level of the treatment liquid is reduced to a first liquid level, clamping the part of the silicon wafer, which is exposed out of the treatment liquid, moving the silicon wafer to be separated from the support and separating the silicon wafer from the treatment liquid;
when the liquid level is the first liquid level, part of the silicon wafer is exposed out of the treatment liquid, and the contact part of the bracket and the silicon wafer is not exposed out of the treatment liquid.
Wherein, when the liquid level of the treatment liquid drops to a first liquid level, the part of the silicon wafer, which is exposed out of the treatment liquid, is clamped, and the silicon wafer is moved to be separated from the support and separated from the treatment liquid, and the method comprises the following steps:
and stopping discharging the treatment liquid when the liquid level is lowered to the first liquid level, clamping the part of the silicon wafer, which is exposed out of the treatment liquid, moving the silicon wafer along the vertical direction to separate from the support, and separating the silicon wafer from the treatment liquid.
Wherein stopping discharging the processing liquid when the liquid level drops to the first liquid level, holding a portion of the silicon wafer exposed from the processing liquid and moving the silicon wafer in a vertical direction to be detached from the holder, and detaching the silicon wafer from the processing liquid, comprises:
and when the liquid level is lowered to a first liquid level, the silicon wafer is moved to be separated from the support along the vertical direction at a first speed, and the first speed is the same as the lowering speed of the liquid level of the treatment liquid before the treatment liquid is lowered to the first liquid level.
Wherein stopping discharging the processing liquid when the liquid level drops to the first liquid level, holding a portion of the silicon wafer exposed from the processing liquid and moving the silicon wafer in a vertical direction to be detached from the holder, and detaching the silicon wafer from the processing liquid, comprises:
when the silicon wafer is separated from the support, stopping moving the silicon wafer and starting to discharge the treatment liquid;
and stopping discharging the treatment liquid when the silicon wafer is completely exposed out of the treatment liquid.
Wherein, after holding the part of the silicon wafer exposed out of the processing liquid and separating the silicon wafer from the processing liquid, the method further comprises:
and drying the silicon wafer after the treatment liquid is removed.
The technical scheme of the invention has the following beneficial effects:
according to the silicon wafer processing device provided by the embodiment of the invention, the control mechanism is used for controlling the clamping mechanism to clamp the part of the silicon wafer, which is exposed out of the processing liquid, and moving the silicon wafer to be separated from the bracket when the processing liquid in the groove body is discharged and the liquid level is reduced to the first liquid level, so that the part of the silicon wafer, which is exposed out of the processing liquid and the contact part of the bracket and the silicon wafer, is not exposed out of the processing liquid when the liquid level is the first liquid level, the moisture at the contact position of the silicon wafer and the bracket can smoothly leave the surface of the silicon wafer, the drying effect of the silicon wafer is improved, the risk of generating watermarks in the subsequent processing process is avoided, and the processing quality of the silicon wafer is improved.
Drawings
FIG. 1 is a schematic structural view of a silicon wafer processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view showing a structure of a silicon wafer contacting a support in the silicon wafer processing apparatus according to the embodiment of the present invention;
FIG. 3a is a schematic view of a silicon wafer placed in a treating liquid in a treating method according to an embodiment of the present invention;
FIG. 3b is a schematic view showing a part of a silicon wafer exposed from a treating solution in the treating method according to the embodiment of the present invention;
FIG. 3c is a schematic view of a treatment fluid at a first fluid level during a treatment process according to an embodiment of the present invention;
FIG. 3d is a schematic diagram illustrating the process of clamping a silicon wafer according to the embodiment of the invention;
FIG. 3e is a schematic view illustrating the clamping of the silicon wafer off the support in the processing method according to the embodiment of the invention;
FIG. 3f is a schematic view of a silicon wafer being removed from the processing liquid in the processing method according to the embodiment of the present invention;
FIG. 3g is another schematic view of the silicon wafer being removed from the processing liquid in the processing method according to the embodiment of the present invention.
Reference numerals
A tank body 10; a chamber 11; a discharge port 12;
a support 20;
a clamping mechanism 30;
a liquid level meter 40;
a silicon wafer 50.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
First, a silicon wafer processing apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
As shown in fig. 1 and 2, the silicon wafer processing apparatus according to the embodiment of the present invention includes a tank 10, a holder 20, a holding mechanism 30, a liquid level meter 40, and a control mechanism.
Specifically, a chamber 11 for containing a treatment liquid is defined in the tank body 10, the bracket 20 is arranged in the chamber 11 for placing a silicon wafer, the clamping mechanism 30 is used for clamping the silicon wafer 50, and the liquid level meter 40 is used for detecting the liquid level of the treatment liquid in the chamber 11; the control mechanism is used for controlling the clamping mechanism 30 to clamp the part of the silicon wafer 50 exposed out of the treatment liquid and moving the silicon wafer 50 to be separated from the bracket 20 when the treatment liquid in the tank body 10 is discharged and the liquid level meter 40 detects that the liquid level is lowered to a first liquid level; when the liquid level is the first liquid level, the processing liquid is partially exposed from the silicon wafer 50, and the processing liquid is not exposed from the contact part of the support 20 and the silicon wafer 50.
That is to say, the silicon wafer processing apparatus mainly comprises a tank 10, a bracket 20, a clamping mechanism 30, a liquid level meter 40 and a control mechanism, wherein a chamber 11 can be defined in the tank 10, one side of the chamber 11 is open, the chamber 11 can be used for containing processing liquid, the processing liquid can be deionized water, mixed solution or other pure solvents, in order to facilitate rapid drying of the silicon wafer after coming out of the processing liquid, the processing liquid can be heated, so that the processing liquid is within a preset temperature range, for example, the processing liquid can be heated to 60-85 ℃ when being deionized water. The support 20 may be disposed in the chamber 11 for placing the silicon wafer, and the support 20 may include a plurality of rods, for example, two rods, which are spaced apart from each other and may be disposed in parallel, and the silicon wafer may be disposed between the two rods. In addition, the support 20 may also be movable in the chamber 11, for example, the support 20 may be raised or lowered, a silicon wafer on the support 20 may be raised by raising the support 20, and a driving structure may be disposed in the chamber 11, the driving structure being connected to the support 20, and the support 20 may be driven to move by the driving structure.
The clamping mechanism 30 can be used for clamping the silicon wafer 50, and the clamping mechanism 30 can be moved, so that the silicon wafer 50 can be moved by the movement of the clamping mechanism 30, for example, the silicon wafer 50 can be lifted or the silicon wafer 50 can be driven to be separated from the support by the movement of the clamping mechanism 30. The liquid level meter 40 can be used for detecting the liquid level of the processing liquid in the chamber 11, the liquid level meter 40 can be arranged in the chamber 11, and the liquid level meter 40 can be arranged between the silicon wafer taking position and the highest point of the contact position of the bracket and the silicon wafer, so that the liquid level meter 40 can detect the liquid level conveniently. The control mechanism can be used for controlling the clamping mechanism 30 to clamp the part of the silicon wafer 50, which exposes the treatment liquid, and moving the silicon wafer 50 to be separated from the support 20 when the liquid level gauge 40 detects that the liquid level drops to a first liquid level, so that the treatment liquid or water at the contact part of the silicon wafer and the support is separated from the surface of the silicon wafer, wherein when the liquid level is the first liquid level, the part of the silicon wafer 50 exposes the treatment liquid and the contact part of the support 20 and the silicon wafer 50 does not expose the treatment liquid, because the treatment liquid of the part exposing the treatment liquid is evaporated, when the silicon wafer 50 is moved to be separated from the support 20, the silicon wafer 50 and the support 20 are already separated in the treatment liquid, and when the silicon wafer 50 is completely separated from the treatment liquid, the treatment liquid cannot be left at the contact position of the silicon wafer 50 and the support 20, and no treatment liquid trace can be generated. The processing device in the embodiment of the invention can enable the moisture at the contact position of the silicon wafer and the bracket to smoothly leave the surface of the silicon wafer, prevent the processing liquid from staying at the contact position of the silicon wafer and the bracket, obtain cleaner silicon wafers, improve the cleaning quality and the drying effect, avoid the risk of generating watermarks in the subsequent processing process and improve the processing quality of the silicon wafers.
In some embodiments of the present invention, the tank body 10 may be provided with a discharge structure for discharging the treatment liquid in the chamber 11, the discharge structure may include a drain pipe and a suction pump, one end of the drain pipe may be disposed in the chamber 11, and the other end of the drain pipe may be communicated with an inlet of the suction pump, and the treatment liquid in the chamber 11 may be discharged through the suction pump and the drain pipe.
Alternatively, the bottom of the tank 10 may be provided with a discharge port 12 communicating with the chamber 11, the discharge port 12 may be used for discharging the processing liquid in the chamber 11, and a valve may be provided at the position of the discharge port 12, so that the opening or closing of the discharge port 12 may be controlled by the valve, thereby facilitating the control of the discharge of the processing liquid.
In other embodiments of the present invention, the control mechanism may be configured to control the discharge mechanism to stop discharging the processing liquid when the liquid level gauge 40 detects that the liquid level falls to the first liquid level, and control the clamping mechanism 30 to clamp the portion of the silicon wafer 50 exposed to the processing liquid and to move the silicon wafer 50 in the vertical direction away from the support 20. That is, when the liquid level meter 40 detects that the liquid level drops to the first liquid level, the silicon wafer 50 partially exposes the processing liquid and the contact portion between the support 20 and the silicon wafer 50 does not expose the processing liquid, the control mechanism can control the discharge structure to stop discharging the processing liquid, and control the clamping mechanism 30 to clamp the portion of the silicon wafer 50 exposed from the processing liquid, and move the silicon wafer 50 away from the support 20 along the vertical direction, the clamping mechanism 30 can move up to two stages, and the silicon wafer can be moved up at a slow speed first to leave the support, and then moved up at a fast speed.
Since the processing liquid in the portion exposed to the processing liquid is evaporated, when the silicon wafer 50 is moved to be detached from the holder 20, the silicon wafer 50 is separated from the holder 20 in the processing liquid, and when the silicon wafer 50 is completely detached from the processing liquid, the processing liquid does not remain on the surface and no trace of the processing liquid is generated.
According to some embodiments of the present invention, the control mechanism may be configured to move the silicon wafer 50 in the vertical direction away from the support 20 at a first speed by the clamping mechanism 30 when the liquid level gauge 40 detects that the liquid level drops to a first liquid level, the first speed being the same as the dropping speed of the liquid level of the processing liquid before the processing liquid drops to the first liquid level, so that the silicon wafer and the processing liquid are separated at substantially the same speed, thereby preventing uneven drying of the surface of the silicon wafer due to the difference in the separating speed of the silicon wafer and the processing liquid and preventing local retention of the processing liquid or traces.
According to other embodiments of the present invention, the control mechanism may be configured to control the clamping mechanism 30 to stop moving and control the discharging mechanism to start discharging the processing liquid after the silicon wafer 50 is clamped and moved by the clamping mechanism 30 to be separated from the support 20, so as to improve the drying efficiency of the silicon wafer, so that the separation speed of the silicon wafer and the processing liquid is substantially stable, and the silicon wafer is prevented from staying; when the silicon wafer 50 is completely exposed out of the treatment liquid, the discharge structure is controlled to stop discharging the treatment liquid, so that the waste of the treatment liquid is reduced, and the adding amount of subsequent treatment liquid is reduced.
The embodiment of the invention also provides a silicon wafer processing method.
The silicon wafer processing method provided by the embodiment of the invention comprises the following steps:
placing a silicon wafer 50 on the bracket 20 in the tank body 10 and immersing the silicon wafer in the treatment liquid in the tank body 10; discharging the treatment liquid in the tank body 10 to expose part of the silicon wafer from the treatment liquid, wherein the treatment liquid is not exposed at the contact part of the bracket 20 and the silicon wafer 50; or the silicon wafer 50 is lifted by adopting a lifting mechanism so that part of the silicon wafer is exposed out of the treatment liquid, and the treatment liquid is not exposed out of the contact part of the lifting mechanism and the silicon wafer 50; the silicon wafer 50 is held between the portions of the silicon wafer 50 exposed from the processing liquid and the silicon wafer 50 is removed from the processing liquid.
That is, in the process of processing the silicon wafer, the silicon wafer 50 is placed on the support 20 in the tank 10 and immersed in the processing liquid in the tank 10, and then part of the silicon wafer is exposed out of the processing liquid, and there are two methods for exposing part of the silicon wafer out of the processing liquid: one is that the treatment liquid in the tank body 10 is discharged to expose part of the silicon wafer, and the treatment liquid is not exposed at the contact part of the bracket 20 and the silicon wafer 50; the other method is to adopt a lifting mechanism to lift the silicon wafer 50 to enable part of the silicon wafer to be exposed out of the treatment liquid, the lifting mechanism can be a support 20 capable of being lifted, or can be a lifting structure additionally arranged, the contact part of the lifting mechanism and the silicon wafer 50 is not exposed out of the treatment liquid, so that the part of the silicon wafer exposed out of the treatment liquid is ensured to be in the treatment liquid at the contact position of the silicon wafer 50 and the support 20 or the lifting mechanism, the silicon wafer 50 can be separated from the support 20 or the lifting mechanism in the treatment liquid, then the part of the silicon wafer 50 exposed out of the treatment liquid is clamped, the silicon wafer 50 is separated from the treatment liquid, and the treatment liquid cannot be retained on the surface and no treatment liquid trace can be generated when the silicon wafer 50 is completely separated from the treatment liquid. By the processing method, moisture at the contact position of the silicon wafer and the support can smoothly leave the surface of the silicon wafer, the drying effect of the silicon wafer is improved, the risk of generating watermarks in the subsequent processing process is avoided, and the processing quality of the silicon wafer is improved. The processing method in the embodiment of the invention can be realized by the silicon wafer processing device in the embodiment.
In some embodiments of the present invention, holding the portion of the wafer 50 exposed to the processing liquid and releasing the wafer 50 from the processing liquid may include:
when the liquid level of the processing liquid drops to a first liquid level, the part of the silicon wafer 50, which is exposed out of the processing liquid, is clamped, the silicon wafer 50 is moved to be separated from the support 20, and the silicon wafer 50 is separated from the processing liquid, wherein when the liquid level is the first liquid level, the part of the silicon wafer 50 is exposed out of the processing liquid, and the contact part of the support 20 and the silicon wafer 50 is not exposed out of the processing liquid. Since the processing liquid of the part exposed out of the processing liquid is evaporated, when the silicon wafer 50 is moved to be separated from the support 20, the silicon wafer 50 and the support 20 are separated in the processing liquid, and when the silicon wafer 50 is completely separated from the processing liquid, the processing liquid is not left at the contact position of the silicon wafer 50 and the support 20, and no trace of the processing liquid is generated.
In other embodiments of the present invention, holding the portion of the silicon wafer 50 exposed to the processing liquid when the level of the processing liquid drops to the first level, moving the silicon wafer 50 off the support 20 and releasing the silicon wafer 50 from the processing liquid includes:
when the liquid level drops to the first liquid level, the discharge of the processing liquid is stopped, the portion of the silicon wafer 50 exposed from the processing liquid is held, and the silicon wafer 50 is moved in the vertical direction to be separated from the holder 20, and the silicon wafer 50 is separated from the processing liquid.
For example, when the liquid level meter 40 detects that the liquid level drops to a first liquid level, part of the silicon wafer 50 is exposed out of the processing liquid, and the contact part of the support 20 and the silicon wafer 50 is not exposed out of the processing liquid, the discharge structure can be controlled by the control mechanism to stop discharging the processing liquid, the clamping mechanism 30 is controlled to clamp the part of the silicon wafer 50 exposed out of the processing liquid, and the silicon wafer 50 is moved in the vertical direction to be separated from the support 20, because the part of the processing liquid exposed out of the processing liquid is evaporated, when the silicon wafer 50 is moved to be separated from the support 20, the silicon wafer 50 and the support 20 are already separated in the processing liquid, and the processing liquid cannot be left on the surface when the silicon wafer 50 is completely separated from the processing liquid.
Alternatively, stopping the discharge of the processing liquid when the liquid level drops to the first liquid level, holding the portion of the silicon wafer 50 exposed to the processing liquid and moving the silicon wafer 50 in the vertical direction to be separated from the support 20, and separating the silicon wafer 50 from the processing liquid may include:
when the level drops to a first level, the silicon wafer 50 is moved vertically away from the support 20 at a first speed that is the same as the rate of drop of the level of the process fluid before the process fluid drops to the first level. The separation speed of the silicon wafer and the treatment liquid is basically the same, uneven drying of the surface of the silicon wafer caused by unstable separation speed of the silicon wafer and the treatment liquid is avoided, and local retention of the treatment liquid or traces is avoided.
In some embodiments of the present invention, stopping the discharge of the processing liquid when the liquid level drops to the first liquid level, holding a portion of the silicon wafer 50, which is exposed to the processing liquid, and moving the silicon wafer 50 in a vertical direction to be separated from the support 20, and separating the silicon wafer 50 from the processing liquid, includes: when the silicon wafer 50 is detached from the holder 20, stopping moving the silicon wafer 50 and starting discharging the processing liquid; the discharge of the processing liquid is stopped when the silicon wafer 50 is completely exposed to the processing liquid.
For example, when the clamping mechanism 30 clamps and moves the silicon wafer 50 to separate from the support 20, the clamping mechanism 30 can be controlled by the control mechanism to stop moving, and the discharge structure is controlled to start discharging the treatment liquid, so that the drying treatment efficiency of the silicon wafer is improved, the separation speed of the silicon wafer and the treatment liquid is basically stable, and the silicon wafer is prevented from staying; when the silicon wafer 50 is completely exposed out of the treatment liquid, the discharge structure is controlled to stop discharging the treatment liquid, so that the waste of the treatment liquid is reduced, and the adding amount of subsequent treatment liquid is reduced.
In other embodiments of the present invention, after holding the portion of the silicon wafer 50 exposed to the processing liquid and removing the silicon wafer 50 from the processing liquid, the method may further include: and drying the silicon wafer after the treatment liquid is removed. After the silicon wafer is completely removed from the processing liquid, the silicon wafer may be dried, and in order to prevent partial incomplete drying of the silicon wafer, the silicon wafer 50 may be dried again after being removed from the processing liquid, for example, by using dry nitrogen gas.
As shown in fig. 3a to 3g, the silicon wafer is processed by the processing apparatus in the above embodiment. As shown in fig. 3a, a processing solution is contained in the chamber 11 of the bath 10, the silicon wafer is completely immersed in the processing solution, as shown in fig. 3b, the processing liquid is discharged such that the silicon wafer is partially exposed to the processing liquid, and the contact position of the silicon wafer 50 with the holder 20 is in the processing liquid, as shown in fig. 3c, when the liquid level drops to the first liquid level, the discharge of the processing liquid is stopped, as shown in fig. 3d, the portion of the silicon wafer 50 exposed to the processing liquid is clamped by the clamping mechanism 30, as shown in fig. 3e, the clamping mechanism 30 clamps the silicon wafer 50 and moves the silicon wafer 50 in a vertical direction away from the support 20, as shown in fig. 3f, the silicon wafer 50 is separated from the processing liquid by discharging the processing liquid, the silicon wafer 50 is separated from the holder 20 in the processing liquid, when the silicon wafer 50 is completely separated from the treatment liquid, the treatment liquid does not remain on the surface, the silicon wafer can be dried, as shown in FIG. 3g, the silicon wafer 50 is taken out by the holding mechanism 30 moving continuously in the vertical direction while holding the silicon wafer 50.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object to be described is changed, the relative positional relationships are changed accordingly.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. An apparatus for processing a silicon wafer, comprising:
the device comprises a tank body, a first clamping device and a second clamping device, wherein a chamber for containing a treatment liquid is defined in the tank body;
the bracket is arranged in the cavity to place a silicon wafer;
the clamping mechanism is used for clamping the silicon wafer;
a liquid level meter for detecting a liquid level of the processing liquid in the chamber;
the control mechanism is used for controlling the clamping mechanism to clamp the part of the silicon wafer, which is exposed out of the treatment liquid, and moving the silicon wafer to be separated from the support when the treatment liquid in the tank body is discharged and the liquid level meter detects that the liquid level is lowered to a first liquid level;
when the liquid level is the first liquid level, the silicon wafer partially exposes out of the treatment liquid and the contact part of the bracket and the silicon wafer does not expose out of the treatment liquid;
the control mechanism is used for controlling the discharge structure to stop discharging the treatment liquid when the liquid level meter detects that the liquid level drops to the first liquid level, and controlling the clamping mechanism to clamp the part of the silicon wafer, which is exposed out of the treatment liquid, and move the silicon wafer along the vertical direction to be separated from the support;
the control mechanism is used for moving the silicon wafer to be separated from the support along the vertical direction at a first speed when the liquid level meter detects that the liquid level is lowered to the first liquid level, and the first speed is the same as the lowering speed of the liquid level of the treatment liquid before the treatment liquid is lowered to the first liquid level.
2. The silicon wafer processing apparatus as claimed in claim 1, wherein a discharge structure for discharging the processing liquid in the chamber is provided on the tank body.
3. The silicon wafer processing apparatus as claimed in claim 2, wherein a discharge port communicating with the chamber is provided at the bottom of the tank body for discharging the processing liquid in the chamber.
4. The silicon wafer processing apparatus according to claim 2,
the control mechanism is used for controlling the clamping mechanism to stop moving and controlling the discharge structure to start discharging the treatment liquid after the silicon wafer is clamped and moved by the clamping mechanism to be separated from the support; and controlling the discharge structure to stop discharging the processing liquid when the silicon wafer is completely exposed out of the processing liquid.
5. A silicon wafer processing method applied to the silicon wafer processing apparatus according to any one of claims 1 to 4, comprising the steps of:
placing a silicon wafer on a bracket in a tank body and immersing the silicon wafer in the treatment liquid in the tank body;
discharging the treatment liquid in the tank body to expose part of the silicon wafer to the treatment liquid, wherein the treatment liquid is not exposed at the contact part of the bracket and the silicon wafer; or lifting the silicon wafer by adopting a lifting mechanism so as to expose part of the silicon wafer out of the treatment liquid, wherein the treatment liquid is not exposed at the contact part of the lifting mechanism and the silicon wafer;
and clamping the part of the silicon wafer, which is exposed out of the treatment liquid, and separating the silicon wafer from the treatment liquid.
6. The processing method according to claim 5, wherein the holding the portion of the silicon wafer exposed to the processing liquid and the releasing the silicon wafer from the processing liquid comprises:
when the liquid level of the treatment liquid is reduced to a first liquid level, clamping the part of the silicon wafer, which is exposed out of the treatment liquid, moving the silicon wafer to be separated from the support and separating the silicon wafer from the treatment liquid;
when the liquid level is the first liquid level, part of the silicon wafer is exposed out of the treatment liquid, and the contact part of the bracket and the silicon wafer is not exposed out of the treatment liquid.
7. The processing method of claim 6, wherein the holding the portion of the wafer exposed to the processing liquid when the level of the processing liquid drops to a first level, moving the wafer off the support and away from the processing liquid comprises:
and stopping discharging the treatment liquid when the liquid level is lowered to the first liquid level, clamping the part of the silicon wafer, which is exposed out of the treatment liquid, moving the silicon wafer along the vertical direction to separate from the support, and separating the silicon wafer from the treatment liquid.
8. The processing method of claim 7, wherein stopping the discharge of the processing liquid when the liquid level drops to the first liquid level, holding a portion of the wafer where the processing liquid is exposed and moving the wafer in a vertical direction to disengage the support and disengage the wafer from the processing liquid comprises:
and when the liquid level is lowered to a first liquid level, the silicon wafer is moved to be separated from the support along the vertical direction at a first speed, and the first speed is the same as the lowering speed of the liquid level of the treatment liquid before the treatment liquid is lowered to the first liquid level.
9. The processing method of claim 7, wherein stopping the discharge of the processing liquid when the liquid level drops to the first liquid level, holding a portion of the wafer where the processing liquid is exposed and moving the wafer in a vertical direction to disengage the support and disengage the wafer from the processing liquid comprises:
when the silicon wafer is separated from the support, stopping moving the silicon wafer and starting to discharge the treatment liquid;
and stopping discharging the treatment liquid when the silicon wafer is completely exposed out of the treatment liquid.
10. The processing method according to claim 5, further comprising, after holding a portion of the silicon wafer exposed to the processing liquid and removing the silicon wafer from the processing liquid:
and drying the silicon wafer after the treatment liquid is removed.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| NL8900480A (en) * | 1989-02-27 | 1990-09-17 | Philips Nv | METHOD AND APPARATUS FOR DRYING SUBSTRATES AFTER TREATMENT IN A LIQUID |
| KR0179783B1 (en) * | 1995-12-19 | 1999-04-15 | 문정환 | Cleaning apparatus of semiconductor wafer |
| JP3043709B2 (en) * | 1997-11-19 | 2000-05-22 | 株式会社カイジョー | Substrate drying equipment |
| US6216709B1 (en) * | 1998-09-04 | 2001-04-17 | Komag, Inc. | Method for drying a substrate |
| US6571806B2 (en) * | 1998-09-04 | 2003-06-03 | Komag, Inc. | Method for drying a substrate |
| MY140644A (en) * | 2001-04-17 | 2010-01-15 | Komag Inc | Method and apparatus for drying a substrate. |
| KR20030048682A (en) * | 2001-12-12 | 2003-06-25 | 삼성전자주식회사 | Wafer guide and wet etching apparatus having it |
| US6875289B2 (en) * | 2002-09-13 | 2005-04-05 | Fsi International, Inc. | Semiconductor wafer cleaning systems and methods |
| KR20050015411A (en) * | 2003-08-05 | 2005-02-21 | 삼성전자주식회사 | Cleaning Apparatus and cleaning method using the same |
| KR101484162B1 (en) * | 2008-08-22 | 2015-01-22 | 주식회사 케이씨텍 | Apparatus for drying substrate |
| JP2013187401A (en) * | 2012-03-08 | 2013-09-19 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate processing method |
| KR102138383B1 (en) * | 2014-02-14 | 2020-07-27 | 에스케이실트론 주식회사 | Wafer cleaning apparatus |
| JP6534160B2 (en) * | 2014-07-31 | 2019-06-26 | 株式会社資源開発研究所 | Cleaning device |
| KR101899435B1 (en) * | 2015-04-15 | 2018-09-17 | 주식회사 케이씨텍 | Wafer treatment apparatus |
| CN108962720A (en) * | 2017-05-18 | 2018-12-07 | 上海新昇半导体科技有限公司 | A kind of drying means of silicon wafer |
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Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |