KR101736845B1 - Apparatus and method for treating a substrate - Google Patents
Apparatus and method for treating a substrate Download PDFInfo
- Publication number
- KR101736845B1 KR101736845B1 KR1020150083354A KR20150083354A KR101736845B1 KR 101736845 B1 KR101736845 B1 KR 101736845B1 KR 1020150083354 A KR1020150083354 A KR 1020150083354A KR 20150083354 A KR20150083354 A KR 20150083354A KR 101736845 B1 KR101736845 B1 KR 101736845B1
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- South Korea
- Prior art keywords
- substrate
- drying
- organic solvent
- chamber
- cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to a substrate processing apparatus and a substrate processing method. According to an embodiment of the present invention, there is provided a substrate processing method including: a cleaning process of supplying a cleaning liquid to a substrate and cleaning the substrate; supplying an organic solvent to upper and rear surfaces of the substrate to replace the cleaning liquid attached to the substrate with the organic solvent; A rear surface drying step of supplying a drying gas to the rear surface of the substrate to remove the organic solvent adhered to the rear surface of the substrate, and a top surface drying step of drying the top surface of the substrate by supplying supercritical fluid to the substrate And a substrate processing method.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for processing a substrate and a method for processing the substrate, and more particularly to a substrate processing apparatus and a substrate processing method for performing a cleaning process on a substrate.
Generally, a semiconductor device is formed through various processes such as a photo process, an etching process, an ion implantation process, and a deposition process for a substrate such as a silicon wafer .
Various processes such as particles, organic contaminants, metallic impurities, and the like are generated during the respective processes. These foreign substances cause defects on the substrate, which directly affect the performance and yield of the semiconductor device. Therefore, a cleaning process for removing foreign substances is essentially involved in the manufacturing process of the semiconductor device.
The cleaning process includes a chemical treatment process for removing contaminants on a substrate by a chemical, a wet cleaning process for removing a chemical solution remaining on the substrate by pure water, And a drying process for drying the pure water remaining on the surface.
On the other hand, in the drying process, the rear surface of the substrate is cleaned with pure water, and a drying process is performed by supplying dry gas. However, when the substrate is dried with the supercritical fluid after the process, the pure water remaining on the back surface of the substrate is not removed well in the supercritical drying process. The pure water that is not removed becomes a foreign matter, causing a problem of transferring the substrate or remaining in the chamber and contaminating the subsequent substrate.
The present invention provides a substrate processing apparatus and a substrate processing method capable of improving efficiency in a substrate drying process.
Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of improving drying efficiency on the top and rear surfaces of a substrate in a substrate drying process.
The problems to be solved by the present invention are not limited to the above-mentioned problems, and the problems not mentioned can be clearly understood by those skilled in the art from the description and the accompanying drawings will be.
The present invention provides a method of treating a substrate.
According to an embodiment of the present invention, there is provided a substrate processing method including: a cleaning process of supplying a cleaning liquid to a substrate and cleaning the substrate; supplying a cleaning liquid attached to the substrate to the organic solvent by supplying an organic solvent to upper and rear surfaces of the substrate; Substituting substitution steps and
A rear surface drying step of supplying a drying gas to the rear surface of the substrate to remove organic solvent adhered to the rear surface of the substrate, and a top surface drying step of drying the top surface of the substrate by supplying a supercritical fluid to the substrate have.
According to one embodiment, in the replacement step, the organic solvent may be supplied to the substrate in a liquid phase.
According to one embodiment, the backside drying process is performed in a cleaning chamber, and the topside drying process may be performed in a drying chamber different from the cleaning chamber.
According to an embodiment, when the substrate is transferred from the cleaning chamber to the drying chamber, a liquid organic solvent film is formed on the top surface of the substrate, and the bottom surface of the substrate may be dried.
According to an embodiment, the organic solvent may be supplied to the upper surface of the substrate while the drying gas is supplied to the rear surface of the substrate in the rear drying process.
According to an embodiment, the time for supplying the organic solvent to the rear surface in the replacing step may be shorter than the time for supplying the organic solvent to the top surface.
According to another embodiment of the present invention, there is provided a method of processing a substrate, comprising: supplying an organic solvent to an upper surface and a rear surface of the substrate; supplying a drying gas to the rear surface of the substrate to dry the rear surface of the substrate; And a top-surface drying step of drying the substrate by supplying a supercritical fluid.
According to an embodiment, the organic solvent supply step and the back side drying step are performed in a cleaning chamber, and the top side drying step may be performed in a drying chamber different from the cleaning chamber.
According to an embodiment of the present invention, before the organic solvent supply step, the cleaning liquid may be supplied to the substrate to clean the substrate.
According to an embodiment, the organic solvent supplying step may be performed on the upper surface of the substrate during the back drying step.
According to one embodiment, the top-surface drying step may dry the top and rear surfaces of the substrate.
The present invention provides an apparatus for processing a substrate.
According to an embodiment of the present invention, the substrate processing apparatus includes a cleaning chamber for performing a cleaning process on a substrate, a drying chamber for supplying a supercritical fluid to the substrate to dry the substrate, and a drying chamber for transporting the substrate to the cleaning chamber and the drying chamber And a control unit for controlling the cleaning chamber, the drying chamber, and the transfer chamber, wherein the cleaning chamber includes a container having a processing space therein, a support unit for supporting the substrate when the processing chamber is located within the processing space, An upper nozzle unit including a first nozzle member for supplying a cleaning liquid to an upper portion of the substrate placed on the support unit and a second nozzle member for supplying an organic solvent; And a rear nozzle for supplying a drying gas, wherein the drying chamber comprises a housing having a drying space therein, And a fluid supply unit for supplying a supercritical fluid to the substrate, wherein the control unit supplies a cleaning liquid to the substrate and performs a cleaning process for cleaning the substrate, and a cleaning process for cleaning the substrate with an organic solvent A rear surface drying step of supplying a drying gas to the rear surface of the substrate to remove the organic solvent adhering to the rear surface of the substrate, The drying chamber and the transfer chamber may be controlled so as to sequentially perform an upper surface drying process of supplying the fluid and drying the upper surface of the substrate.
According to one embodiment, the control unit can control the second nozzle member and the rear nozzle so that the organic solvent is supplied to the substrate in the liquid phase in the replacing step.
According to an embodiment, the back-side drying process is performed in the cleaning chamber, and the top-side drying process may control the cleaning chamber, the drying chamber, and the transfer chamber to be performed in the drying chamber.
According to one embodiment, the control unit controls the second nozzle member and the rear nozzle so that the organic solvent is supplied to the upper surface of the substrate while the drying gas is supplied to the rear surface of the substrate in the rear surface drying process have.
According to an embodiment of the present invention, the organic solvent may be supplied to the top and back surfaces of the substrate during the drying process of the substrate to improve the efficiency of the substrate drying process.
According to an embodiment of the present invention, organic solvent may be supplied to the rear surface of the substrate to improve the cleaning efficiency of the back surface of the substrate.
The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.
1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention.
Figure 2 is a cross-sectional view of the cleaning chamber of Figure 1;
3 is a perspective view showing the support unit and the rear nozzle of Fig. 2;
Figure 4 is a cross-sectional view of the support unit and back nozzle of Figure 2;
Figure 5 is a cross-sectional view of the drying chamber of Figure 1;
Fig. 6 is a schematic view of a controller for controlling the transport chamber, the cleaning chamber, and the drying chamber of Fig. 1;
7 is a flowchart sequentially showing a substrate processing method according to an embodiment of the present invention.
8 to 16 are views schematically showing a substrate processing method according to an embodiment of the present invention.
17 is a flowchart sequentially showing a substrate processing method according to another embodiment of the present invention.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.
Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described. In this embodiment, a cleaning process is performed on the substrate as an example. Here, the substrate is a comprehensive concept including both semiconductor devices, flat panel displays (FPDs), and other substrates used for manufacturing a circuit pattern formed on a thin film. Examples of such substrates include various wafers including silicon wafers, glass substrates, organic substrates, and the like.
1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 1, the
The
The
The
The
The
The
The
The
The
The
A plurality of cleaning
2 is a cross-sectional view showing the
The vessel 3100 provides a processing space therein. The processing space is a space in which the substrate processing process is performed. The upper portion of the container 3100 is opened. The vessel 3100 has an
The
A plurality of
A plurality of the chuck pins 3250 are provided. The
The elevating
The
The
The
The
The
The
The
The
The
The
The
The
The
The fixing
The
The drying
The
The
When the
The elevating
One end of the lifting rod 4220 is inserted into the lifting cylinder 4210 and extends vertically upward. The other end of the lifting rod 4220 is coupled to the
Unlike the above-described example, the
The substrate supporting unit 4200 supports the substrate W between the
The substrate supporting unit 4200 is installed on a fixed
The
The
The
The
The
The upper
The lower
In the upper
The supercritical
The
The
The
The
In the embodiment of the present invention, the
The
The
The
Hereinafter, a substrate processing method (S100) according to an embodiment of the present invention will be described.
FIG. 7 is a flowchart sequentially illustrating a substrate processing method according to an embodiment of the present invention, and FIGS. 8 to 16 are views schematically showing a substrate processing method according to an embodiment of the present invention.
7 to 16, the substrate processing method S100 includes a cleaning step S110, a replacement step S120, a rear cleaning step S130, and a top surface cleaning step S140.
The substrate W is transferred from the container C to the
After the cleaning process (S110), the substrate W is subjected to the replacement process (S120). After the cleaning process (S110), the
After the organic solvent is supplied to the rear surface of the substrate W, the rear surface drying step (S130) proceeds. During the back drying step (S130), the replacement step (S120) for supplying the organic solvent may be continuously performed on the upper surface of the substrate. In the rear-side drying step (S130), dry gas is supplied to the rear surface of the substrate W. The drying gas is supplied through the
After the back drying step S130, the substrate W is transferred from the
The substrate W is transferred to the
In the above-described substrate processing method, the organic solvent is supplied to the rear surface of the substrate W, the cleaning liquid is replaced with the organic solvent, and then the rear surface of the substrate W is dried through the drying gas. In addition, the organic solvent remaining on the back surface of the substrate W can be dried through the substrate drying process using the subsequent supercritical fluid.
In this substrate processing method (S100), pure water remaining on the rear surface of the substrate (W) can be removed by replacing pure water with organic solvent on the rear surface of the substrate (W) Further, the pure water remaining on the back surface of the substrate W is not removed in the subsequent supercritical fluid drying process, and the remaining substrate W, which remains in the
Unlike the above-described substrate processing method, the substrate processing method (S200) may include a cleaning step (S210), an organic solvent supply step (S220), a back side drying step (S230), and a top side drying step (S240).
The cleaning step S210 is a step of cleaning the substrate W by supplying a cleaning liquid to the substrate W. The cleaning step S210 may be performed in the
In the organic solvent supply step (S220), organic solvent is supplied to the upper surface and the rear surface of the substrate W. In the organic solvent supply step (S220), the cleaning liquid remaining on the substrate (W) is replaced with an organic solvent. For example, in the organic solvent supply step S220, the organic solvent may be supplied to the rear surface of the substrate W while supplying the organic solvent to the upper surface of the substrate W. At this time, the organic solvent can be simultaneously supplied to the upper surface and the rear surface of the substrate W. Alternatively, the organic solvent may be supplied to the rear surface of the substrate W after a predetermined period of time after the organic solvent is first supplied to the upper surface of the substrate W.
During the back-drying step (S230), the organic solvent supply step (S220) continues on the upper surface of the substrate. The rear drying step S230 is a step of drying the rear surface of the substrate W by supplying drying gas to the rear surface of the substrate W. The rear drying step S230 is performed by supplying drying gas to the rear surface of the substrate W after the supply of the organic solvent is completed. Unlike the above-described example, the back-drying step S230 may be performed after the organic solvent supply step S220 is completed.
The upper surface drying step S240 is a step of drying the upper surface and the rear surface of the substrate W. The upper surface drying step S240 is a step of drying the substrate W by supplying a supercritical fluid to the substrate W.
The organic solvent supply step (S220) and the back side drying step (S230) are performed in the cleaning chamber (3000). The top surface drying step S240 is performed in a
The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.
10: substrate processing apparatus 1000: index module
2000 process processing module 2100: buffer chamber
2200: transfer chamber 3000: cleaning chamber
3100: container 3200: support unit
3300: lift unit 3400: upper nozzle unit
3410: first nozzle member 3430: second nozzle member
3500: rear nozzle 4000: drying chamber
4100: housing 4200: substrate support unit
4300: heating unit 4500: fluid supply unit
4600: breaking unit 4700: exhaust unit
5000: control unit
Claims (15)
A cleaning process of supplying a cleaning liquid to the substrate and cleaning the substrate;
A replacement step of supplying an organic solvent to the upper surface and the rear surface of the substrate to replace the cleaning solution attached to the substrate with the organic solvent;
A backside drying step of supplying a drying gas to the rear surface of the substrate to remove the organic solvent adhered to the rear surface of the substrate; And
An upper surface drying step of supplying supercritical fluid to the substrate to dry the upper surface of the substrate; ≪ / RTI >
Wherein the organic solvent is supplied to the substrate in a liquid phase in the replacing step.
Wherein the back side drying step is performed in a cleaning chamber, and the top side drying step is performed in a drying chamber different from the cleaning chamber.
Wherein a liquid organic solvent film is formed on an upper surface of the substrate when the substrate is transferred from the cleaning chamber to the drying chamber, and a rear surface of the substrate is dried.
Wherein the organic solvent is supplied to the upper surface of the substrate while the drying gas is supplied to the rear surface of the substrate in the rear drying step.
Wherein the time for supplying the organic solvent to the rear surface in the replacing step is shorter than the time for supplying the organic solvent to the top surface.
An organic solvent supply step of supplying an organic solvent to the upper surface and the rear surface of the substrate;
A backside drying step of drying the backside of the substrate by supplying a drying gas to the backside of the substrate;
And drying the substrate by supplying a supercritical fluid.
Wherein the organic solvent supply step and the rear surface drying step are performed in a cleaning chamber, and the top surface drying step is performed in a drying chamber different from the cleaning chamber.
And a cleaning step of cleaning the substrate by supplying a cleaning liquid to the substrate before the organic solvent supply step.
Wherein the organic solvent supply step is performed on the upper surface of the substrate while the rear surface drying step is performed.
Wherein the top surface drying step comprises drying the top and back surfaces of the substrate.
A cleaning chamber for performing a cleaning process on the substrate;
A drying chamber for supplying supercritical fluid to the substrate to dry the substrate;
A transfer chamber for transferring the substrate to the cleaning chamber and the drying chamber; And
And a control unit for controlling the cleaning chamber, the drying chamber, and the transfer chamber,
The cleaning chamber includes:
A vessel having a processing space therein;
A support unit for supporting the substrate when it is positioned in the processing space;
An upper nozzle unit including a first nozzle member for supplying a cleaning liquid to an upper surface of a substrate placed on the support unit and a second nozzle member for supplying an organic solvent; And
And a rear nozzle disposed inside the support unit for supplying the organic solvent and the drying gas to the rear surface of the substrate,
The drying chamber includes:
A housing having a drying space therein;
A substrate supporting unit for supporting the substrate;
And a fluid supply unit for supplying a supercritical fluid to the substrate,
The fluid supply unit includes:
An upper fluid supply member for supplying a supercritical fluid to the drying space at an upper portion of the substrate supporting unit;
And a lower fluid supply member for supplying supercritical fluid to the drying space at a lower portion of the substrate supporting unit,
Wherein the control unit includes a cleaning step of supplying a cleaning liquid to the substrate and cleaning the substrate, a replacement step of supplying organic solvent to the upper and the rear surfaces of the substrate to replace the cleaning liquid attached to the substrate with the organic solvent, Drying the substrate by supplying a drying gas to remove the organic solvent adhering to the back surface of the substrate, and supplying the supercritical fluid to the substrate to dry the top surface of the substrate, And controls the drying chamber and the transfer chamber.
Wherein the control unit controls the second nozzle member and the rear nozzle so that the organic solvent is supplied to the substrate in a liquid phase in the replacing step.
Wherein the control unit controls the cleaning chamber, the drying chamber, and the transfer chamber so that the rear surface drying process is performed in the cleaning chamber, and the top surface drying process is performed in the drying chamber.
Wherein the control unit controls the second nozzle member and the rear nozzle so that the organic solvent is supplied to the upper surface of the substrate while the drying gas is supplied to the rear surface of the substrate in the rear drying process.
Priority Applications (1)
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KR1020150083354A KR101736845B1 (en) | 2015-06-12 | 2015-06-12 | Apparatus and method for treating a substrate |
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KR1020150083354A KR101736845B1 (en) | 2015-06-12 | 2015-06-12 | Apparatus and method for treating a substrate |
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KR20160147162A KR20160147162A (en) | 2016-12-22 |
KR101736845B1 true KR101736845B1 (en) | 2017-05-18 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102030056B1 (en) * | 2017-05-02 | 2019-11-11 | 세메스 주식회사 | Method for cleaning a chamber, Method for treating a substrate, and Apparatus for treating a substrate |
KR102162188B1 (en) * | 2018-07-18 | 2020-10-07 | 세메스 주식회사 | Apparatus and method for treating substrate |
KR102262113B1 (en) * | 2018-12-18 | 2021-06-11 | 세메스 주식회사 | Apparatus and method for treating substrate |
KR102139606B1 (en) * | 2018-12-21 | 2020-07-30 | 세메스 주식회사 | Apparatus and method for processing substrate |
KR102285672B1 (en) * | 2019-06-04 | 2021-08-06 | 무진전자 주식회사 | Substrate drying chamber |
KR20230161671A (en) * | 2022-05-19 | 2023-11-28 | 세메스 주식회사 | Facility and method for processing substrate |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003206497A (en) | 2002-01-11 | 2003-07-22 | Sony Corp | Method for cleansing and drying |
JP2003282407A (en) | 2002-03-25 | 2003-10-03 | Dainippon Screen Mfg Co Ltd | High-pressure substrate treating apparatus |
JP2006130418A (en) | 2004-11-05 | 2006-05-25 | Ryusyo Industrial Co Ltd | Supercritical fluid washing/drying apparatus |
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2015
- 2015-06-12 KR KR1020150083354A patent/KR101736845B1/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003206497A (en) | 2002-01-11 | 2003-07-22 | Sony Corp | Method for cleansing and drying |
JP2003282407A (en) | 2002-03-25 | 2003-10-03 | Dainippon Screen Mfg Co Ltd | High-pressure substrate treating apparatus |
JP2006130418A (en) | 2004-11-05 | 2006-05-25 | Ryusyo Industrial Co Ltd | Supercritical fluid washing/drying apparatus |
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