KR20160147162A - Apparatus and method for treating a substrate - Google Patents

Apparatus and method for treating a substrate Download PDF

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Publication number
KR20160147162A
KR20160147162A KR1020150083354A KR20150083354A KR20160147162A KR 20160147162 A KR20160147162 A KR 20160147162A KR 1020150083354 A KR1020150083354 A KR 1020150083354A KR 20150083354 A KR20150083354 A KR 20150083354A KR 20160147162 A KR20160147162 A KR 20160147162A
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South Korea
Prior art keywords
substrate
drying
organic solvent
chamber
cleaning
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KR1020150083354A
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Korean (ko)
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KR101736845B1 (en
Inventor
이영훈
임의상
이재명
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세메스 주식회사
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Priority to KR1020150083354A priority Critical patent/KR101736845B1/en
Publication of KR20160147162A publication Critical patent/KR20160147162A/en
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Publication of KR101736845B1 publication Critical patent/KR101736845B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method. According to an embodiment of the present invention, there is provided a substrate processing method including: a cleaning process of supplying a cleaning liquid to a substrate and cleaning the substrate; supplying an organic solvent to upper and rear surfaces of the substrate to replace the cleaning liquid attached to the substrate with the organic solvent; A rear surface drying step of supplying a drying gas to the rear surface of the substrate to remove the organic solvent adhered to the rear surface of the substrate, and a top surface drying step of drying the top surface of the substrate by supplying supercritical fluid to the substrate And a substrate processing method.

Description

[0001] DESCRIPTION [0002] APPARATUS AND METHOD FOR TREATING A SUBSTRATE [0003]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for processing a substrate and a method for processing the substrate, and more particularly to a substrate processing apparatus and a substrate processing method for performing a cleaning process on a substrate.

Generally, a semiconductor device is formed through various processes such as a photo process, an etching process, an ion implantation process, and a deposition process for a substrate such as a silicon wafer .

Various processes such as particles, organic contaminants, metallic impurities, and the like are generated during the respective processes. These foreign substances cause defects on the substrate, which directly affect the performance and yield of the semiconductor device. Therefore, a cleaning process for removing foreign substances is essentially involved in the manufacturing process of the semiconductor device.

The cleaning process includes a chemical treatment process for removing contaminants on a substrate by a chemical, a wet cleaning process for removing a chemical solution remaining on the substrate by pure water, And a drying process for drying the pure water remaining on the surface.

On the other hand, in the drying process, the rear surface of the substrate is cleaned with pure water, and a drying process is performed by supplying dry gas. However, when the substrate is dried with the supercritical fluid after the process, the pure water remaining on the back surface of the substrate is not removed well in the supercritical drying process. The pure water that is not removed becomes a foreign matter, causing a problem of transferring the substrate or remaining in the chamber and contaminating the subsequent substrate.

The present invention provides a substrate processing apparatus and a substrate processing method capable of improving efficiency in a substrate drying process.

Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of improving drying efficiency on the top and rear surfaces of a substrate in a substrate drying process.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and the problems not mentioned can be clearly understood by those skilled in the art from the description and the accompanying drawings will be.

The present invention provides a method of treating a substrate.

According to an embodiment of the present invention, there is provided a substrate processing method including: a cleaning process of supplying a cleaning liquid to a substrate and cleaning the substrate; supplying a cleaning liquid attached to the substrate to the organic solvent by supplying an organic solvent to upper and rear surfaces of the substrate; Substituting substitution steps and

A rear surface drying step of supplying a drying gas to the rear surface of the substrate to remove organic solvent adhered to the rear surface of the substrate, and a top surface drying step of drying the top surface of the substrate by supplying a supercritical fluid to the substrate have.

According to one embodiment, in the replacement step, the organic solvent may be supplied to the substrate in a liquid phase.

According to one embodiment, the backside drying process is performed in a cleaning chamber, and the topside drying process may be performed in a drying chamber different from the cleaning chamber.

According to an embodiment, when the substrate is transferred from the cleaning chamber to the drying chamber, a liquid organic solvent film is formed on the top surface of the substrate, and the bottom surface of the substrate may be dried.

According to an embodiment, the organic solvent may be supplied to the upper surface of the substrate while the drying gas is supplied to the rear surface of the substrate in the rear drying process.

According to an embodiment, the time for supplying the organic solvent to the rear surface in the replacing step may be shorter than the time for supplying the organic solvent to the top surface.

According to another embodiment of the present invention, there is provided a method of processing a substrate, comprising: supplying an organic solvent to an upper surface and a rear surface of the substrate; supplying a drying gas to the rear surface of the substrate to dry the rear surface of the substrate; And a top-surface drying step of drying the substrate by supplying a supercritical fluid.

According to an embodiment, the organic solvent supply step and the back side drying step are performed in a cleaning chamber, and the top side drying step may be performed in a drying chamber different from the cleaning chamber.

According to an embodiment of the present invention, before the organic solvent supply step, the cleaning liquid may be supplied to the substrate to clean the substrate.

According to an embodiment, the organic solvent supplying step may be performed on the upper surface of the substrate during the back drying step.

According to one embodiment, the top-surface drying step may dry the top and rear surfaces of the substrate.

The present invention provides an apparatus for processing a substrate.

According to an embodiment of the present invention, the substrate processing apparatus includes a cleaning chamber for performing a cleaning process on a substrate, a drying chamber for supplying a supercritical fluid to the substrate to dry the substrate, and a drying chamber for transporting the substrate to the cleaning chamber and the drying chamber And a control unit for controlling the cleaning chamber, the drying chamber, and the transfer chamber, wherein the cleaning chamber includes a container having a processing space therein, a support unit for supporting the substrate when the processing chamber is located within the processing space, An upper nozzle unit including a first nozzle member for supplying a cleaning liquid to an upper portion of the substrate placed on the support unit and a second nozzle member for supplying an organic solvent; And a rear nozzle for supplying a drying gas, wherein the drying chamber comprises a housing having a drying space therein, And a fluid supply unit for supplying a supercritical fluid to the substrate, wherein the control unit supplies a cleaning liquid to the substrate and performs a cleaning process for cleaning the substrate, and a cleaning process for cleaning the substrate with an organic solvent A rear surface drying step of supplying a drying gas to the rear surface of the substrate to remove the organic solvent adhering to the rear surface of the substrate, The drying chamber and the transfer chamber may be controlled so as to sequentially perform an upper surface drying process of supplying the fluid and drying the upper surface of the substrate.

According to one embodiment, the control unit can control the second nozzle member and the rear nozzle so that the organic solvent is supplied to the substrate in the liquid phase in the replacing step.

According to an embodiment, the back-side drying process is performed in the cleaning chamber, and the top-side drying process may control the cleaning chamber, the drying chamber, and the transfer chamber to be performed in the drying chamber.

According to one embodiment, the control unit controls the second nozzle member and the rear nozzle so that the organic solvent is supplied to the upper surface of the substrate while the drying gas is supplied to the rear surface of the substrate in the rear surface drying process have.

According to an embodiment of the present invention, the organic solvent may be supplied to the top and back surfaces of the substrate during the drying process of the substrate to improve the efficiency of the substrate drying process.

According to an embodiment of the present invention, organic solvent may be supplied to the rear surface of the substrate to improve the cleaning efficiency of the back surface of the substrate.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.

1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention.
Figure 2 is a cross-sectional view of the cleaning chamber of Figure 1;
3 is a perspective view showing the support unit and the rear nozzle of Fig. 2;
Figure 4 is a cross-sectional view of the support unit and back nozzle of Figure 2;
Figure 5 is a cross-sectional view of the drying chamber of Figure 1;
Fig. 6 is a schematic view of a controller for controlling the transport chamber, the cleaning chamber, and the drying chamber of Fig. 1;
7 is a flowchart sequentially showing a substrate processing method according to an embodiment of the present invention.
8 to 16 are views schematically showing a substrate processing method according to an embodiment of the present invention.
17 is a flowchart sequentially showing a substrate processing method according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described. In this embodiment, a cleaning process is performed on the substrate as an example. Here, the substrate is a comprehensive concept including both semiconductor elements, flat panel displays (FPDs), and other substrates used for manufacturing a circuit pattern formed on a thin film. Examples of such substrates include various wafers including silicon wafers, glass substrates, organic substrates, and the like.

1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 1, the substrate processing apparatus 10 includes an index module 1000 and a processing module 2000. The index module 1000 and the process module 2000 are disposed in a first direction 12. Here, the first direction 12 is a direction in which the index module 1000 and the process module 2000 are disposed, and the second direction 14 is a direction perpendicular to the second direction 14 when viewed from above , And the third direction (16) is a direction perpendicular to both the first direction (12) and the second direction (14).

The index module 1000 can carry the substrate W from the outside and carry the substrate W to the processing module 2000. The process module 2000 can perform a cleaning process on the substrate W. [ For example, the cleaning process may include a supercritical drying process.

The index module 1000 is provided as a facility front end module (EFEM). The index module 1000 includes a load port 1100 and a transfer frame 1200.

The load port 1100 is provided with a container C in which the substrate W is accommodated. The container C may be a front opening unified pod (FOUP). The container C can be carried from the outside to the load port 1100 or taken out from the load port 1100 by an overhead transfer (OHT). A plurality of load ports 1100 are provided. A plurality of load ports (1100) are disposed along the second direction (14). In this embodiment, four load ports 1100 are provided. Alternatively, the load port 1100 may be provided in a different number from the present embodiment.

The transfer frame 1200 conveys the substrate W between the container C placed on the load port 1100 and the process module 2000. The transfer frame 1200 is located adjacent to the load port 1100. The load port 1100 and the transfer frame 1200 are disposed along the first direction 12.

The transfer frame 1200 includes an index robot 1210 and an index rail 1220. The index robot 1210 moves on the index rail 1220 and can transport the substrate W. [ The index rail 1220 is provided along its second direction 14 in its longitudinal direction.

The process module 2000 is a module for performing a process on the substrate W. For example, the substrate processing process may perform a cleaning process. The process module 2000 includes a buffer chamber 2100, a transfer chamber 2200, a cleaning chamber 3000, a drying chamber 4000 and a control unit 5000 (5000).

The buffer chamber 2100 provides a space for temporarily holding the substrate W carried between the index module 1000 and the processing module 2000. The buffer chamber 2100 is positioned between the index module 1000 and the transfer chamber 2200. The buffer chamber 2100 is disposed adjacent to the index module 1000. The buffer chamber 2100 is arranged along the first direction 12 sequentially with the index module 1000, the buffer chamber 2100 and the transfer chamber 2200. [ The buffer chamber 2100 may be provided with a buffer slot (not shown) in which the substrate W is placed. The index robot 1210 can take the substrate W out of the container C and place it in the buffer slot and the transfer robot 2210 of the transfer chamber 2200 can take out the substrate W placed in the buffer slot And can be transported to the cleaning chamber 3000 or the drying chamber 4000. The buffer chamber 2100 may be provided with a plurality of buffer slots so that a plurality of substrates W can be placed.

The transfer chamber 2200 has a buffer chamber 2100, a cleaning chamber 3000, and a drying chamber 4000 disposed therearound. The transfer chamber 2200 transports the substrate W between the buffer chamber 2100, the cleaning chamber 3000 and the drying chamber 4000. The transfer chamber 2200 may include a transfer robot 2210 and a transfer rail 2220. The transfer robot 2210 moves on the transfer rail 2220 and can transfer the substrate W. [

The cleaning chamber 3000 and the drying chamber 4000 can perform a cleaning process. The cleaning process can be performed sequentially in the cleaning chamber 3000 and the drying chamber 4000. [ For example, in the cleaning chamber 3000, a chemical process, a rinsing process, and an organic solvent process can be performed during the cleaning process. In the drying chamber 4000, a supercritical drying process can be performed.

The cleaning chamber 3000 is disposed at one side of the transfer chamber 2200. The drying chamber 4000 is disposed on the other side of the transfer chamber 2200. The cleaning chamber 3000, the transfer chamber 2200, and the drying chamber 4000 are disposed along the second direction 14. The cleaning chamber 3000 and the drying chamber 4000 may be arranged to face each other on the other side of the transport chamber 2200.

A plurality of cleaning chambers 3000 may be provided. A plurality of drying chambers 4000 may be provided. The plurality of process chambers 3000, 4000 may be arranged in a line on the side of the transfer chamber 2200, or may be stacked on top of each other, or a combination thereof. The arrangement of the cleaning chamber 3000 and the drying chamber 4000 is not limited to the example described above and may be appropriately changed in consideration of various factors such as the footprint of the substrate processing apparatus 10 and the process efficiency.

2 is a cross-sectional view showing the cleaning chamber 3000 of FIG. The cleaning chamber 3000 includes a container 3100, a supporting unit 3200, an elevating unit 3300, an upper nozzle unit 3400 and a rear nozzle 3500. [

The vessel 3100 provides a processing space therein. The processing space is a space in which the substrate processing process is performed. The upper portion of the container 3100 is opened. The vessel 3100 has an inner recovery vessel 3110, an intermediate recovery vessel 3120, and an outer recovery vessel 3130. Each of the recovery cylinders 3110, 3120, and 3130 recovers the different treatment liquids among the treatment liquids used in the process. The inner recovery cylinder 3110 is provided in the shape of an annular ring surrounding the support unit 3200. The intermediate recovery cylinder 3120 is provided in the form of an annular ring surrounding the inner recovery cylinder 3110. The external recovery cylinder 3130 is provided in the shape of an annular ring surrounding the intermediate recovery cylinder 3120. The inner space 3111 of the inner recovery vessel 3110 and the space 3121 between the inner recovery vessel 3110 and the intermediate recovery vessel 3120 and the space 3121 between the intermediate recovery vessel 3120 and the outer recovery vessel 3130 3131 function as an inlet through which the process liquid flows into the inner recovery vessel 3110, the intermediate recovery vessel 3120, and the outer recovery vessel 3130, respectively. Recovery passages 3112, 3122, and 3132 extend vertically downward from the bottom of the recovery passages 3110, 3120, and 3130, respectively. Each of the recovery lines 3112, 3122, and 3132 discharges the processing liquid that has flowed through the respective recovery tubes 3110, 3120, and 3130. The discharged treatment liquid can be reused through an external treatment liquid recovery system (not shown).

The support unit 3200 supports the substrate W and rotates the substrate W during the process. The support unit 3200 has a body 3210, a support pin 3230, a chuck pin 3250, and a support shaft 3270. The body 3210 has a top surface that is generally circular when viewed from the top. A support shaft 3270 rotatable by a motor 3290 is fixedly coupled to the bottom surface of the body 3210.

A plurality of support pins 3230 are provided. The support pins 3230 are spaced apart from the edge of the upper surface of the body 3210 at predetermined intervals. The support plate 3230 protrudes upward from the body 3210. The supporting pins 3230 are formed on the rear surface of the substrate W so that the substrate W is spaced apart from the upper surface of the body 3210 by a predetermined distance, Supports the edge.

A plurality of the chuck pins 3250 are provided. The chuck pin 3250 is disposed farther away from the center of the body 3210 than the support pin 3230. The chuck pin 3250 is provided to protrude upward from the body 3210. The chuck pin 3250 supports the side of the substrate W so that the substrate W is not laterally displaced from the correct position when the support unit 3200 is rotated. The chuck pin 3250 is provided to allow linear movement between the standby position and the support position along the radial direction of the body 3210. The stand-by position is a distance from the center of the body 3210 relative to the support position. The chuck pin 3250 is positioned in the standby position when the substrate W is loaded or unloaded to the support unit 3200 and the chuck pin 3250 is positioned in the support position when the substrate W is being processed. At the support position, the chuck pin 3250 is in contact with the side of the substrate W.

The elevating unit 3300 linearly moves the container 3100 in the vertical direction. As the container 3100 is moved up and down, the relative height of the container 3100 to the supporting unit 3200 is changed. The elevating unit 3300 has a bracket 3310, a moving shaft 3330, and a driver 3350. The bracket 3310 is fixed to the outer wall of the container 3100 and the moving shaft 3330 which is moved in the vertical direction by the driver 3350 is fixedly coupled to the bracket 3310. The container 3100 is lowered so that the support unit 3200 protrudes to the upper portion of the container 3100 when the substrate W is placed on the support unit 3200 or lifted from the support unit 3200. [ When the process is performed, the height of the container 3100 is adjusted so that the process liquid may flow into the predetermined recovery containers 3110, 3120, and 3130 according to the types of the process liquid supplied to the substrate W. Alternatively, the elevating unit 3300 can move the supporting unit 3200 in the vertical direction.

The upper nozzle unit 3400 supplies the substrate W with fluid. The upper nozzle unit 3400 includes a first nozzle member 3410 and a second nozzle member 3430. The first nozzle member 3410 supplies the treatment liquid to the upper portion of the substrate W. [ For example, the treating liquid may be a washing liquid or a rinsing liquid.

The first nozzle member 3410 includes a first nozzle 3411, a first nozzle arm 3413, a first nozzle shaft 3415, and a first nozzle driver 3417. The first nozzle 3411 ejects the treatment liquid onto the substrate W. For example, the treatment liquid may be a chemiluminescent liquid or a washing liquid. For example, a chemical solution may be a solution of hydrogen peroxide (H 2 O 2) or a solution of hydrogen peroxide solution mixed with ammonia (NH 4 OH), hydrochloric acid (HCl) or sulfuric acid (H 2 SO 4), or a solution of hydrofluoric acid (HF). In one example, the wash liquid may be pure water.

The first nozzle 3411 is coupled to the first nozzle arm 3413. The first nozzle 3411 is installed at the bottom end of the first nozzle arm 3413. The first nozzle arm 3413 is positioned horizontally with the support unit 3200. The first nozzle arm 3413 is vertically coupled to the first nozzle axis 3415. The first nozzle axis 3415 is provided along its longitudinal direction in the third direction 16. A first nozzle driver 3417 is coupled to the lower end of the first nozzle shaft 3415.

 The first nozzle driver 3417 operates to rotate and lift the first nozzle shaft 3415. The first nozzle 3411 is moved to the process position and the standby position by the first nozzle driver 3417. For example, the first nozzle 3411 may move between a process position and a standby position through a swing motion. The process position is the position where the first nozzle 3411 is disposed in the vertical upper portion of the container, and the standby position is the position where the first nozzle 3411 is out of the vertical upper portion of the container.

The second nozzle member 3430 supplies the treatment liquid to the upper portion of the substrate W. [ For example, the treatment liquid may be an organic solvent. The second nozzle member 3430 includes a second nozzle 3431, a second nozzle arm 3433, a second nozzle axis 3435, and a second nozzle driver 3437.

The second nozzle 3431 ejects the processing liquid onto the substrate W. For example, the treatment liquid may be an organic solvent. As the organic solvent, isopropyl alcohol may be provided. Alternatively, it is possible to use ethyl glycol, 1-propanol, tetra hydraulic franc, 4-hydroxy, 4-methyl, 2-pentanone, A solution or gas of 1-butanol, 2-butanol, methanol, ethanol, n-propyl alcohol or dimethylether may be used.

The second nozzle 3431 is coupled to the second nozzle arm 3433. The second nozzle 3431 is installed at the bottom end of the second nozzle arm 3433. The second nozzle arm 3433 is positioned horizontally with the support unit 3200. The second nozzle arm 3433 is vertically coupled to the second nozzle axis 3435. [ The second nozzle axis 3435 is provided along its length direction in the third direction 16. A second nozzle driver 3437 is coupled to the lower end of the second nozzle shaft 3435. The second nozzle driver 3437 operates to rotate and lift the second support shaft. The second nozzle 3431 is moved to the process position and the standby position by the second nozzle driver 3437. For example, the second nozzle 3431 can move between the process position and the standby position through a swing motion. The process position is the position where the second nozzle 3431 is disposed in the vertical upper portion of the container, and the standby position is the position where the second nozzle 3431 is out of the vertical upper portion of the container.

The rear nozzle 3500 supplies fluid to the rear surface of the substrate W to clean the rear surface of the substrate W. The fluid supplied from the rear nozzle 3500 may be a treatment liquid and a drying gas.

The rear nozzle 3500 includes a base plate 3510, a first back nozzle 3520, a second back nozzle 3530, a third back nozzle 3540, a fourth back nozzle 3550, a fixing plate 3560, Member 3570 as shown in FIG.

The base plate 3510 is located in the central region of the body 3210. The base plate 3510 is located on the upper side of the fixing plate 3560. The base plate 3510 has a top surface provided in a circular shape when viewed from above. The base plate 3510 may be provided in a truncated cone shape.

The first back nozzle 3520, the second back nozzle 3530, the third back nozzle 3540 and the fourth back nozzle 3550 are located in the central region of the base plate 3510. The first back nozzle 3520, the second back nozzle 3530, the third back nozzle 3540 and the fourth back nozzle 3550 are provided through the base plate 3510. The first back nozzle 3520, the second back nozzle 3530, the third back nozzle 3540 and the fourth back nozzle 3550 supply fluid to the rear surface of the substrate W. For example, the first back nozzle 3520 can supply a chemical liquid to the rear surface of the substrate W. [ The chemical liquid may be supplied as a solution of hydrogen peroxide (H 2 O 2) or a solution of hydrogen peroxide solution mixed with ammonia (NH 4 OH), hydrochloric acid (HCl) or sulfuric acid (H 2 SO 4), or a solution of hydrofluoric acid (HF). The second back nozzle 3530 can supply the cleaning liquid to the rear surface of the substrate W. [ The wash liquid may be pure.

 The third back nozzle 3540 can supply an organic solvent. As the organic solvent, isopropyl alcohol may be provided. Alternatively, it is possible to use ethyl glycol, 1-propanol, tetra hydraulic franc, 4-hydroxy, 4-methyl, 2-pentanone, A solution or gas of 1-butanol, 2-butanol, methanol, ethanol, n-propyl alcohol or dimethylether may be used. The fourth back nozzle 3550 can supply dry gas to the rear surface of the substrate W. [ The dry gas may be provided as a refractory gas. For example, nitrogen gas.

The first back nozzle 3520, the second back nozzle 3530, the third back nozzle 3540 and the fourth back nozzle 3550 may be provided in the form of a circular tube. In the above example, the chemical liquid, the rinsing liquid, the organic solvent, and the drying gas are supplied from the first back nozzle 3520, the second back nozzle 3530, the third back nozzle 3540 and the fourth back nozzle 3550, Alternatively, any one of the above fluids may be provided in each back nozzle.

The fixing plate 3560 is coupled to the body 3210. The fixing plate 3560 is disposed in the central region of the body 3210. The fixing plate 3560 is coupled to the upper portion of the body 3210. The fixing plate 3560 has a top surface provided in a circular shape when viewed from above. The fixing plate 3560 may be provided as a circular plate. The fixing plate 3560 is fixedly coupled to the body 3210 by a fastening member 3570.

The fastening member 3570 engages the fastening plate 3560 with the body 3210. A plurality of fastening members 3570 are provided. As an example, the fastening member 3570 is provided with a bolt. The plurality of bolts are located at the same distance from the center of the body 3210. Although six bolts 341a are provided in the present embodiment, they may be provided in different numbers from the present embodiment.

The drying chamber 4000 may include a housing 4100, a substrate support unit 4200, a heating unit 4300, a fluid supply unit 4500, a blocking unit 4600 and an exhaust unit 4700.

The housing 4100 provides a drying space therein. In the drying space, a supercritical drying process is performed on the substrate W. The housing 4100 is provided with a material capable of withstanding a high pressure exceeding a critical pressure.

The housing 4100 includes an upper body 4110, a lower body 4120, and an elevating member 4130. The upper body 4110 is fixedly installed. The lower body 4120 is located at the lower portion of the upper body 4110. The lower body 4120 can move up and down. When the lower body 4120 descends and is separated from the upper body 4110, the inner space of the drying chamber 4000 is opened. When the housing 4100 is opened, the substrate W can be carried into or taken out of the inner space of the drying chamber 4000. The substrate W transferred into the drying chamber 4000 may be in a state where the organic solvent remains in the cleaning chamber 3000 through the organic solvent process.

When the lower body 4120 rises and comes into close contact with the upper body 4110, the drying space is sealed inside the drying chamber 4000. Inside the drying space, a supercritical drying process can be performed. Unlike the above-described example, the lower body 4120 may be fixedly installed, and the upper body 4110 may be elevated.

The elevating member 4130 moves the lower body 4120 up and down. The elevating member 4130 includes a lifting cylinder 4210 and a lifting rod 4220. [ The lifting cylinder 4210 is coupled to the lower body 4120. The lifting rod 4220 generates a lifting force in the vertical direction. The elevating cylinder 4210 can overcome the high pressure of the critical pressure inside the drying chamber 4000 while the supercritical drying process is performed and close the drying chamber 4000 by bringing the upper body 4110 and the lower body 4120 into close contact with each other .

One end of the lifting rod 4220 is inserted into the lifting cylinder 4210 and extends vertically upward. The other end of the lifting rod 4220 is coupled to the upper body 4110. When the driving force is generated in the lifting cylinder 4210, the lifting cylinder 4210 and the lifting rod 4220 are relatively lifted and the lifting body 4120 coupled to the lifting cylinder 4210 can be lifted and lowered. The lifting rod 4220 prevents the upper body 4110 and the lower body 4120 from moving in the horizontal direction while the lower body 4120 is lifted and lowered by the lifting cylinder 4210. The lifting rod 4220 guides the lifting direction of the lower body 4120. The lifting rod 4220 can prevent the upper body 4110 and the lower body 4120 from deviating from each other at a predetermined position.

Unlike the above-described example, the housing 4100 may be provided as a single housing 4100 having an opening formed at one side thereof. The housing 4100 may further include a door (not shown). The door (not shown) can be lifted up and down to open and close the opening, and seal the housing 4100.

The substrate supporting unit 4200 supports the substrate W between the upper body 4110 and the lower body 4120. The substrate supporting unit 4200 is fixed to the lower surface of the upper body 4110. The substrate supporting unit 4200 may be provided with a structure that extends vertically downward and is bent perpendicularly in the horizontal direction at the lower end thereof. The substrate supporting unit 4200 can support the edge region of the substrate W. [ The substrate supporting unit 4200 contacts the edge region of the substrate W to support the substrate W so that the supercritical drying process can be performed on the entire upper surface and most of the lower surface of the substrate W. [ Here, the upper surface of the substrate W may be a pattern surface, and the lower surface thereof may be a non-pattern surface.

The substrate supporting unit 4200 is installed on a fixed body 4110 to support the substrate W relatively stably while the lower body 4120 moves up and down.

The upper body 4110 is provided with a horizontal adjusting member 4111. The horizontal adjusting member 4111 adjusts the horizontality of the upper body 4110. The horizontal adjusting member 4111 adjusts the horizontal degree of the upper body 4110 to adjust the horizontal degree of the substrate supporting unit 4200. [ When the substrate W is tilted in the supercritical drying process, the organic solvent remaining on the substrate W flows on the inclined surface to dry or overdry a specific portion of the substrate W, . The horizontal adjustment member 4111 can prevent the organic solvent from flowing through the horizontal alignment of the substrate W. [ Alternatively, when the upper body 4110 is elevated and the lower body 4120 is fixed or the substrate supporting unit 4200 is installed on the lower body 4120, the horizontal adjusting member 4111 may be installed on the lower body 4120 It is possible.

The heating unit 4300 heats the inside of the drying chamber 4000. The heating unit 4300 may heat the supercritical fluid supplied inside the drying chamber 4000 to a supercritical fluid temperature by heating the supercritical fluid to a supercritical fluid temperature above the critical temperature. The heating unit 4300 may be embedded in a wall of at least one of the upper body 4110 and the lower body 4120. As an example, the heating unit 4300 may be provided as a heater.

The fluid supply unit 4500 supplies the supercritical fluid to the drying chamber 4000. The fluid supply unit 4500 may be connected to a supply line 4550 for supplying supercritical fluid.

The supply line 4550 may be provided with valves 4560 and 4570. Valves 4560 and 4570 regulate the flow rate of the supplied supercritical fluid.

The fluid supply unit fluid supply unit 4500 supplies the supercritical fluid to the substrate W. [ The fluid supply unit 4500 can inject supercritical fluid into the central region of the substrate W. [ The fluid supply unit 4500 may include an upper fluid supply member 4510 and a lower fluid supply member 4520.

The upper fluid supply member 4510 supplies the supercritical fluid to the upper surface of the substrate W. [ The upper fluid supply member 4510 is connected to the upper surface of the housing 4100. The upper fluid supply member 4510 is connected to the upper body 4110. The upper fluid supply member 4510 may be located above the central vertical position of the substrate W placed on the substrate supporting unit 4200. [

The lower fluid supply member 4520 supplies the supercritical fluid to the lower surface of the substrate W. [ The lower fluid supply member 4520 is connected to the lower surface of the housing 4100. The lower fluid supply member 4520 is connected to the lower body 4120. The lower fluid supply member 4520 may be positioned vertically downward from the center of the substrate W placed on the substrate supporting unit 4200. [

In the upper fluid supply member 4510 and the lower fluid supply member 4520, first, the lower fluid supply member 4520 supplies the supercritical fluid, and the upper fluid supply member 4510 supplies the supercritical fluid. The supercritical drying process can be started in a state where the inside of the drying chamber 4000 is initially below the critical pressure so that the supercritical fluid supplied into the drying chamber 4000 can be liquefied. Therefore, when the supercritical fluid is supplied to the upper fluid supply member 4510 at an early stage of the supercritical drying process, the supercritical fluid may be liquefied and fall into the substrate W by gravity to damage the substrate W .

The supercritical fluid supply member 4510 is supplied with supercritical fluid to the drying chamber 4000 through the lower fluid supply member 4520 to supply the supercritical fluid after the inner pressure of the drying chamber 4000 reaches the critical pressure It is possible to prevent the supplied supercritical fluid from liquefying and dropping onto the substrate W. [

The blocking unit 4600 blocks the supercritical fluid supplied through the fluid supply unit 4500 from being directly injected onto the substrate W. [ The blocking unit 4600 includes a blocking plate 4610 and a support base 4620.

The blocking plate 4610 is disposed between the fluid supply unit 4500 and the substrate W supported by the substrate support unit 4200. The blocking plate 4610 may be disposed between the lower fluid supplying member 4520 and the substrate supporting unit 4300 and positioned below the substrate W. [ The blocking plate 4610 can prevent the supercritical fluid supplied through the lower fluid supplying member 4520 from being directly injected onto the lower surface of the substrate W. [

The shielding plate 4610 may have the same radius as the substrate W or may be provided larger than the substrate W. [ The supercritical fluid can be completely prevented from being supplied directly to the substrate W when the blocking plate 4610 is provided larger than the radius of the substrate W. [ Alternatively, the blocking plate 4610 may be provided with a smaller radius than the substrate W. [ The supercritical fluid is prevented from being sprayed directly onto the substrate W when the blocking plate 4610 is provided to be smaller than the radius of the substrate W and the flow rate of the supercritical fluid is minimized, The fluid can reach relatively easily.

The support base 4620 supports the blocking plate 4610. The blocking plate 4610 may be placed at one end of the support 4620. The support base 4620 extends vertically upward from the lower surface of the housing 4100. The support plate 4620 and the shield plate 4610 can be installed such that the shield plate 4610 is simply placed on the support 4620 by gravity without any additional engagement. Alternatively, the support base 4620 and the blocking plate 4610 may be coupled by a coupling means such as a nut or a bolt. In this case, a supercritical fluid having excellent permeability may penetrate between the supercritical fluids and generate contaminants. Optionally, the support 4620 and the isolation plate 4610 may be provided integrally.

In the embodiment of the present invention, the blocking unit 4600 is provided on the lower body 4120, but the blocking unit 4600 may be provided on the upper body 4110. [ And may be selectively provided between the substrate W and the upper body 4110 and between the substrate W and the lower body 4120. [

The exhaust unit 4700 exhausts the supercritical fluid from the drying chamber 4000. The exhaust unit 4700 may be connected to an exhaust line 4750 which exhausts the supercritical fluid. The exhaust unit 4700 may be provided with a valve (not shown) for regulating the flow rate of supercritical fluid to be exhausted to the exhaust line 4750. The supercritical fluid exhausted through the exhaust line 4750 may be released to the atmosphere or may be supplied to a supercritical fluid regeneration system (not shown).

The exhaust unit 4700 may be formed in the lower body 4120. In the latter stage of the supercritical drying process, the supercritical fluid is discharged from the drying chamber 4000 and the pressure inside the drying chamber 4000 is lowered to the critical pressure or less, so that the supercritical fluid can be liquefied. The liquefied supercritical fluid may be discharged through the exhaust unit 4700 formed in the lower body 4120 by gravity.

The control unit 5000 controls the cleaning chamber 3000, the drying chamber 4000 and the transfer chamber 2200. [ The control unit 5000 controls the cleaning chamber 3000 so that the cleaning process of cleaning the substrate W by supplying the cleaning liquid to the substrate W is performed. The control unit 5000 controls the cleaning chamber 3000 so that a replacement process of supplying the organic solvent to the upper surface and back of the substrate W and replacing the cleaning liquid attached to the substrate W with the organic solvent is performed. The control unit 5000 controls the second nozzle member 3430 and the rear nozzle 3500 so that the organic solvent is supplied to the substrate W in the liquid phase in the replacement step. The control unit 5000 controls the cleaning chamber 3000 to perform a back drying process for controlling the organic solvent adhered to the rear surface of the substrate W by supplying a drying gas to the rear surface of the substrate W. [ The control unit 5000 controls the second nozzle member 3430 and the rear nozzle 3500 so that the organic solvent is supplied to the upper surface of the substrate W while the drying gas is supplied to the rear surface of the substrate W in the rear- do. The control unit 5000 controls the cleaning chamber 3000, the drying chamber 4000, and the transfer chamber 4000 to transfer the substrate W to the drying chamber 4000 after the replacement process and the back drying process are performed on the substrate W of the cleaning chamber 3000 Thereby controlling the chamber 2200. The control unit 5000 controls the drying chamber 4000 such that a top surface drying process for drying the upper surface of the substrate W is performed by supplying supercritical fluid to the substrate W. [

Hereinafter, a substrate processing method (S100) according to an embodiment of the present invention will be described.

FIG. 7 is a flowchart sequentially illustrating a substrate processing method according to an embodiment of the present invention, and FIGS. 8 to 16 are views schematically showing a substrate processing method according to an embodiment of the present invention.

7 to 16, the substrate processing method S100 includes a cleaning step S110, a replacement step S120, a rear cleaning step S130, and a top surface cleaning step S140.

The substrate W is transferred from the container C to the cleaning chamber 3000 to the load port 1100. [ The substrate W is moved from the buffer chamber 2100 to the cleaning chamber 3000 by the transfer chamber 2200. [ The substrate W is placed on the support unit 3200 in the processing space of the cleaning chamber 3000 as shown in Fig. After the substrate W is placed, the first nozzle member 3410 moves the first nozzle 3411 to the process position. In the first nozzle 3411, the cleaning liquid is supplied onto the substrate W as shown in FIG. 9, and a cleaning process (S110) for cleaning the substrate W is performed. At this time, the cleaning process (S110) may also be performed by supplying the cleaning liquid to the rear surface of the substrate W in the rear nozzle 3500 as well. The cleaning liquid is supplied to the entire area of the substrate W.

After the cleaning process (S110), the substrate W is subjected to the replacement process (S120). After the cleaning process (S110), the first nozzle 3410 moves to the standby position by the first nozzle member 3410. The second nozzle member 3430 moves the second nozzle 3431 to the process position as shown in Fig. Then, as shown in FIG. 11, the second nozzle 3431 carries out a replacement step (S120) for supplying organic solvent to the upper surface and the rear surface of the substrate W. The replacing step (S120) is a step of replacing the cleaning liquid attached to the substrate (W) with an organic solvent. The organic solvent is supplied from the upper surface of the substrate W through the second nozzle 3431. At the same time, organic solvent is supplied to the rear surface of the substrate W by the rear nozzle 3500. The organic solvent is continuously supplied to the upper surface of the substrate W while supplying the organic solvent to the rear surface of the substrate W. The supply of the organic solvent continues to the upper surface of the substrate W even after the supply of the organic solvent to the rear surface of the substrate W is completed. In the replacement step (S120), the time for supplying the organic solvent to the rear surface is shorter than the time for supplying the organic solvent to the top surface of the substrate (W). The organic solvent may be supplied to the rear surface of the substrate W after the organic solvent is supplied to the upper surface of the substrate W, unlike the above example.

After the organic solvent is supplied to the rear surface of the substrate W, the rear surface drying step (S130) proceeds. During the back drying step (S130), the replacement step (S120) for supplying the organic solvent may be continuously performed on the upper surface of the substrate. In the rear-side drying step (S130), dry gas is supplied to the rear surface of the substrate W. The drying gas is supplied through the rear nozzle 3500. The drying gas is supplied to the rear surface of the substrate W to remove the organic solvent adhering to the rear surface of the substrate W. [ 12, the organic solvent may be supplied to the upper surface of the substrate W while the drying gas is supplied to the rear surface of the substrate W. In this case, The dry gas may be supplied to the rear surface of the substrate W after the organic solvent is supplied to the upper surface of the substrate W. [ The rear surface drying step (S130) of the substrate W is performed in the cleaning chamber 3000.

After the back drying step S130, the substrate W is transferred from the cleaning chamber 3000 to the drying chamber 4000 as shown in FIG. The transfer of the substrate W is carried out through the transfer robot 2210 of the transfer chamber 2200. When the substrate W is transported from the cleaning chamber 3000 to the drying chamber 4000, a liquid organic solvent film is formed on the upper surface of the substrate W as shown in Figs. 13 and 14, It is in a state of primary drying.

The substrate W is transferred to the drying chamber 4000, and then the upper surface drying step (S140) is performed. As shown in Fig. 15, the substrate W is transported to the substrate supporting unit 4200 in a state where the drying space is open. In a state in which the substrate W is supported by the finger support unit 3200, the housing 4100 is squeezed by the movement of the lower body 4120 as shown in Fig. After the drying space is sealed in the drying chamber 4000, the fluid supply unit 4500 supplies the supercritical fluid to the drying space. The supercritical fluid is supplied to the substrate W so that the upper surface of the substrate W is dried. In this process, a portion of the organic solvent remaining on the rear surface of the substrate W is also dried. The substrate is secondarily dried through the top surface drying step (S140).

In the above-described substrate processing method, the organic solvent is supplied to the rear surface of the substrate W, the cleaning liquid is replaced with the organic solvent, and then the rear surface of the substrate W is dried through the drying gas. In addition, the organic solvent remaining on the back surface of the substrate W can be dried through the substrate drying process using the subsequent supercritical fluid.

In this substrate processing method (S100), pure water remaining on the rear surface of the substrate (W) can be removed by replacing pure water with organic solvent on the rear surface of the substrate (W) Further, the pure water remaining on the back surface of the substrate W is not removed in the subsequent supercritical fluid drying process, and the remaining substrate W, which remains in the drying chamber 4000, the transfer chamber 2200, and the container C, Contamination can be prevented. In addition, the organic solvent remaining on the upper surface and the rear surface of the substrate W may be removed through the supercritical fluid drying process, thereby improving the efficiency of the substrate cleaning process.

Unlike the above-described substrate processing method, the substrate processing method (S200) may include a cleaning step (S210), an organic solvent supply step (S220), a back side drying step (S230), and a top side drying step (S240).

The cleaning step S210 is a step of cleaning the substrate W by supplying a cleaning liquid to the substrate W. The cleaning step S210 may be performed in the cleaning chamber 3000. In the cleaning step S210, the cleaning liquid is supplied to the upper surface and the rear surface of the substrate W to perform the process.

In the organic solvent supply step (S220), organic solvent is supplied to the upper surface and the rear surface of the substrate W. In the organic solvent supply step (S220), the cleaning liquid remaining on the substrate (W) is replaced with an organic solvent. For example, in the organic solvent supply step S220, the organic solvent may be supplied to the rear surface of the substrate W while supplying the organic solvent to the upper surface of the substrate W. At this time, the organic solvent can be simultaneously supplied to the upper surface and the rear surface of the substrate W. Alternatively, the organic solvent may be supplied to the rear surface of the substrate W after a predetermined period of time after the organic solvent is first supplied to the upper surface of the substrate W.

During the back-drying step (S230), the organic solvent supply step (S220) continues on the upper surface of the substrate. The rear drying step S230 is a step of drying the rear surface of the substrate W by supplying drying gas to the rear surface of the substrate W. The rear drying step S230 is performed by supplying drying gas to the rear surface of the substrate W after the supply of the organic solvent is completed. Unlike the above-described example, the back-drying step S230 may be performed after the organic solvent supply step S220 is completed.

 The upper surface drying step S240 is a step of drying the upper surface and the rear surface of the substrate W. The upper surface drying step S240 is a step of drying the substrate W by supplying a supercritical fluid to the substrate W.

The organic solvent supply step (S220) and the back side drying step (S230) are performed in the cleaning chamber (3000). The top surface drying step S240 is performed in a drying chamber 4000 different from the cleaning chamber 3000. [

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

10: substrate processing apparatus 1000: index module
2000 process processing module 2100: buffer chamber
2200: transfer chamber 3000: cleaning chamber
3100: container 3200: support unit
3300: lift unit 3400: upper nozzle unit
3410: first nozzle member 3430: second nozzle member
3500: rear nozzle 4000: drying chamber
4100: housing 4200: substrate support unit
4300: heating unit 4500: fluid supply unit
4600: breaking unit 4700: exhaust unit
5000: control unit

Claims (15)

A method of processing a substrate,
A cleaning process of supplying a cleaning liquid to the substrate and cleaning the substrate;
A replacement step of supplying an organic solvent to the upper surface and the rear surface of the substrate to replace the cleaning solution attached to the substrate with the organic solvent;
A backside drying step of supplying a drying gas to the rear surface of the substrate to remove the organic solvent adhered to the rear surface of the substrate; And
An upper surface drying step of supplying supercritical fluid to the substrate to dry the upper surface of the substrate; ≪ / RTI > The method according to claim 1,
Wherein the organic solvent is supplied to the substrate in a liquid phase in the replacing step. The method according to claim 1,
Wherein the back side drying step is performed in a cleaning chamber, and the top side drying step is performed in a drying chamber different from the cleaning chamber. The method of claim 3,
Wherein a liquid organic solvent film is formed on an upper surface of the substrate when the substrate is transferred from the cleaning chamber to the drying chamber, and a bottom surface of the substrate is in a dried state. The method according to claim 1,
Wherein the organic solvent is supplied to the upper surface of the substrate while the drying gas is supplied to the rear surface of the substrate in the rear drying step. The method according to claim 1,
Wherein the time for supplying the organic solvent to the rear surface in the replacing step is shorter than the time for supplying the organic solvent to the top surface. A method of processing a substrate,
An organic solvent supply step of supplying an organic solvent to the upper surface and the rear surface of the substrate;
A backside drying step of drying the backside of the substrate by supplying a drying gas to the backside of the substrate;
And drying the substrate by supplying a supercritical fluid. 8. The method of claim 7,
Wherein the organic solvent supply step and the rear surface drying step are performed in a cleaning chamber, and the top surface drying step is performed in a drying chamber different from the cleaning chamber. 8. The method of claim 7,
And a cleaning step of cleaning the substrate by supplying a cleaning liquid to the substrate before the organic solvent supply step. 8. The method of claim 7,
Wherein the organic solvent supply step is performed on the upper surface of the substrate while the rear surface drying step is performed. 8. The method of claim 7,
Wherein the top surface drying step comprises drying the top and back surfaces of the substrate. An apparatus for processing a substrate,
A cleaning chamber for performing a cleaning process on the substrate;
A drying chamber for supplying supercritical fluid to the substrate to dry the substrate;
A transfer chamber for transferring the substrate to the cleaning chamber and the drying chamber; And
And a control unit for controlling the cleaning chamber, the drying chamber, and the transfer chamber,
The cleaning chamber includes:
A vessel having a processing space therein;
A support unit for supporting the substrate when it is positioned in the processing space;
An upper nozzle unit including a first nozzle member for supplying the cleaning liquid to the upper portion of the substrate placed on the support unit and a second nozzle member for supplying the organic solvent; And
And a rear nozzle disposed inside the support unit for supplying the organic solvent and the drying gas to the rear surface of the substrate,
The drying chamber includes:
A housing having a drying space therein;
A substrate supporting unit for supporting the substrate;
And a fluid supply unit for supplying a supercritical fluid to the substrate,
Wherein the control unit includes a cleaning step of supplying a cleaning liquid to the substrate and cleaning the substrate, a replacement step of supplying organic solvent to the upper and the rear surfaces of the substrate to replace the cleaning liquid attached to the substrate with the organic solvent, Drying the substrate by supplying a drying gas to remove the organic solvent adhering to the back surface of the substrate, and supplying the supercritical fluid to the substrate to dry the top surface of the substrate, And controls the drying chamber and the transfer chamber. 13. The method of claim 12,
Wherein the control unit controls the second nozzle member and the rear nozzle so that the organic solvent is supplied to the substrate in a liquid phase in the replacing step. 13. The method of claim 12,
Wherein the control unit controls the cleaning chamber, the drying chamber, and the transfer chamber so that the rear surface drying process is performed in the cleaning chamber, and the top surface drying process is performed in the drying chamber. 13. The method of claim 12,
Wherein the control unit controls the second nozzle member and the rear nozzle so that the organic solvent is supplied to the upper surface of the substrate while the drying gas is supplied to the rear surface of the substrate in the rear drying process.
KR1020150083354A 2015-06-12 2015-06-12 Apparatus and method for treating a substrate KR101736845B1 (en)

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CN108807141A (en) * 2017-05-02 2018-11-13 细美事有限公司 Chamber cleaning method, substrate processing method using same and substrate board treatment
KR20200009397A (en) * 2018-07-18 2020-01-30 세메스 주식회사 Apparatus and method for treating substrate
KR20200076765A (en) * 2018-12-18 2020-06-30 세메스 주식회사 Apparatus and method for treating substrate
KR20200078128A (en) * 2018-12-21 2020-07-01 세메스 주식회사 Apparatus and method for processing substrate
CN112038260A (en) * 2019-06-04 2020-12-04 无尽电子有限公司 Substrate drying chamber

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Publication number Priority date Publication date Assignee Title
JP4042412B2 (en) 2002-01-11 2008-02-06 ソニー株式会社 Cleaning and drying method
JP3836040B2 (en) 2002-03-25 2006-10-18 大日本スクリーン製造株式会社 High pressure substrate processing equipment
JP2006130418A (en) 2004-11-05 2006-05-25 Ryusyo Industrial Co Ltd Supercritical fluid washing/drying apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108807141A (en) * 2017-05-02 2018-11-13 细美事有限公司 Chamber cleaning method, substrate processing method using same and substrate board treatment
KR20180122517A (en) * 2017-05-02 2018-11-13 세메스 주식회사 Method for cleaning a chamber, Method for treating a substrate, and Apparatus for treating a substrate
CN108807141B (en) * 2017-05-02 2023-10-27 细美事有限公司 Chamber cleaning method, substrate processing method, and substrate processing apparatus
KR20200009397A (en) * 2018-07-18 2020-01-30 세메스 주식회사 Apparatus and method for treating substrate
KR20200076765A (en) * 2018-12-18 2020-06-30 세메스 주식회사 Apparatus and method for treating substrate
KR20200078128A (en) * 2018-12-21 2020-07-01 세메스 주식회사 Apparatus and method for processing substrate
CN112038260A (en) * 2019-06-04 2020-12-04 无尽电子有限公司 Substrate drying chamber

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