CN1105399C - 将内引线焊接到半导体集成电路上的无凸缘方法 - Google Patents

将内引线焊接到半导体集成电路上的无凸缘方法 Download PDF

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CN1105399C
CN1105399C CN97101097A CN97101097A CN1105399C CN 1105399 C CN1105399 C CN 1105399C CN 97101097 A CN97101097 A CN 97101097A CN 97101097 A CN97101097 A CN 97101097A CN 1105399 C CN1105399 C CN 1105399C
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近藤敏成
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Abstract

将内引线焊接到集成电路芯片电极的一种方法，该方法是将内引线的尖端用加热过的焊具压在金属电极上。焊具的热量使内引线尖端软化，从而使内引线可以无需加入软金属凸缘直接压焊到金属电极上。

Description

将内引线焊接到半导体集成 电路上的无凸缘方法
技术领域：
本发明涉及内引线焊接到半导体集成电路芯片金属电极的一种方法
背景技术：
一般应用在载带自动键合的内引线焊接法，举例说，采用象黄金之类的软金属制成的凸缘，这些凸缘在金属电极或内引线本身上形成。这些软金属凸缘虽然给内引线和电极的焊接带来了方便，但制造工艺成本高，需要独立的设备和额外的劳力，而且凸缘的制造方法需要一定的时间去学。这样，凸缘的制造工艺大大增加了半导体器件成品的成本。
发明内容：
因此，本发明的目的是无需制造凸缘而将内引线连接到半导体集成电路芯片的金属电极。
本发明的方法用经加热的焊具将内引线尖端压接在金属电极上。焊具的热量使内引线的尖端软化，因而压在金属电极上时无需软的金属凸缘就可直接压焊到金属电极上。
本发明的方法还可以包括一个或多个以下的辅助工序：退火预软化内引线；待压接在所述金属电极的内引线表面的粗糙化；和在内引线尖端形成台面；
附图说明：
附图中：
图1是塑料膜引线框架同内引线的平面图；
图2是图1沿X-X线截取的剖视图；
图3是退火炉的示意图；
图4是温度与引线硬度的关系曲线图；
图5是引线焊接之前安置在塑料膜引线框架的IC芯片的平面图；
图6是沿图5中的Y-Y线截取的剖视图，说明内引线的焊接工艺；
图7是表面粗糙化过的内引线剖视图；
图8是内引线连同其台面平面的剖视图；
图9是说明图8中内引线的焊接的剖视图。
现在参看附图说明本发明的一些实施例。同样的编号用以表示不同附图中等效或相同的元件。
具体实施方式：
第一实施例
图1示出例如载带自动键合中使用的那种塑料膜引线框架的一部分。引线框架的聚酰亚胺膜2，中心开孔4，上面焊接有多个内引线6在中心孔4上方延伸。引线框架沿X-X线的横截面结构如图2中所示。各内引线6由厚约35微米的铜箔线芯8被覆以厚约5微米的镀金层10组成。内引线6用粘结剂12粘附到聚酰亚胺膜2上。
图1和图2中所示的引线框架是这样制备的：将粘结剂12涂遍聚酰亚胺膜2表面，用粘结剂12将铜箔片粘附到聚酰亚胺膜2的整个表面(包括中心孔4在内)，制作铜箔图形，除去那些不成为内引线6的部分，于是留下来的是粘附在聚酰亚胺膜2上的内引线铜箔心8，再将铜箔8露出的表面(包括上表面和下表面)镀金。如此得出的内引线6，其维氏硬度(HV)值通常在110至120的范围。
内引线6焊接到半导体集成电路芯片(以下简称IC芯片)之前，引线框架先放放图3所示的那种退火炉，在如氮之类起还原作用的氛围中和大约200℃至大约300℃的温度范围退火30分钟左右。这个退火工序起了预软化引线6的作用，使其硬度降低到80至100HV左右。
退火可根据内引线中使用的铜箔类型采用不同的退火温度。图4示出退火温度与引线硬度之间的关系，前者在水平坐标轴上标出，后者在垂直坐标轴上标出。白点是内引线通常使用的一种铜箔的数据点，其退火温度以大约300℃为宜。黑点是内引线通常使用的另一种铜箔的数据点，其退火温以较低为宜。
参看图5。引线框架安置在焊接设备下面，以便可以将经退火的内引线6焊接到IC芯片14上。IC芯片14配置在中心孔4上，焊接是用焊具16进行的。
图6中的剖视图更清楚地说明了焊接过程。IC芯片14安置在加热到100℃的工作台18中央。焊具16安置在工作台中央上方，加热到500℃。夹具20安置在工作台18上，聚酰亚胺膜2安置在夹具20上固定就位，使内引线6的尖端处在IC芯片14铝电极22的正上方。接着，将焊具16降下来使其将内引线6的尖端压在铝电极22上，同时将内引线6的尖端加热到500℃。压力维持在1公斤力，历时十分之八秒钟(0.8秒)。高温再加上高压使内引线6的镀金层与电极22的铝形成合金，从而使内引线6直接压焊到铝电极22上。
内引线6的尖端与500℃的焊具接触，从而软化到大约40HV至60HV的硬度，从图4可以证实到这一点。这个硬度值与现有技术内引线焊接采用的金凸缘硬度类似。因此，本发明的方法无需凸台缘就能使焊点可靠性可与现有技术的媲美。效果是大大节省了设备和劳动成本。
本发明方法的另一个优点是，由于引线无需凸缘而直接焊到铝电极上，因而焊点的断面低而均匀，不出现升高的凸缘。
第二实施例
本发明方法的第二个实施例与第一个实施例类似，只是取消了内引线的退火工序，焊具16的温度提高到560℃。焊接压力也是1.0公斤，持续0.8秒之久。在这些温度和时间的情况下，虽然引线的初始硬度是从110HV至120HV，内引线6的尖端却能软化到40HV至60HV的硬度。
第二实施例达到第一实施例类似的效果，而由于取消了退火工序，因而还有更短、更简单的优点。
第三实施例
第三实施例与第一实施例类似，但增加了内引线6下表面粗糙化的工序。
粗糙化是在内引线6的铜箔芯8制成图形之后但引线6镀金之前通过腐蚀处理铜箔芯8表面进行的，镀金层10遍布引线所需露出的表面，包括粗糙化的表面在内。图7的剖视图示出内引线6的粗糙化表面24。粗糙度(粗糙化表面各毗邻的低谷之间的间距)约为1.0微米。粗糙化并没有改变内引线6的硬度，退火之前的硬度仍然约为110HV至120HV。
退火和焊接工序和第一实施例的一样进行，因而这里不再赘述。第三实施例的好处是，即使IC芯片14铝电极22的表面覆有厚的天然氧化层，当粗糙化表面24压在电极表面时，氧化层不难全压碎掉，从而能够可靠形成与第一实施例一样的铝-金合金焊点。
第三实施例可以和第二实施例一样通过取消退火工序进一步改善。若与铝电极22接触的部分已粗糙，第三实施例也可以不用整个而只是部分地将内引线6的底部表面粗糙化。
第四实施例
第四实施例与第一实施例类似，只是将内引线尖端制成台面形，这样内引线就可以无需在往四周围的钝化膜施加不必要压力的情况下焊接到铝电极上。
图8是第四实施例使用的那一种内引线6的剖视图。台面26是在内引线6通过去掉铜箔的不需要部分形成线路图形之后镀上镀金层10之前形成的。台面26是通过腐蚀减小铜箔芯8台面以外的厚度形成的。台面26可以是方的、圆的、六角形的、钻石形的或任何其它焊接到铝电极22上适用的形状。台面的形成并没有改变内引线6的硬度，硬度仍然和第一实施例的一样为110HV至120HV。
退火和焊接工序如第一实施例所述的一样进行。图9示出了内引线6焊接到周围都是钝化膜28且部分为钝化膜28覆盖住的铝电极22的情况。模具压下内引线6时，只有台面26与铝电极22接触。内引线6的任何部分都没有压在钝化膜28上。
台面26与铝电极22之间形成的焊点，其连接强度基本上与第一实施例中形成的焊点强度一样。第四实施例的好处是，钝化膜28不会因焊接压力而破裂。
第四实施例可以和第二实施例一样，通过取消退火工序加以改进。
本发明并非只能用在载带自动键合上，而是可以用在任何引线在键合到IC芯片的金属电极的工艺上，不管内引线本身是如何形成或安装的。
上述实施例中所述的200℃、300℃、500℃和560℃的温度和40HV、60HV、80HV、100HV、110HV和120HV的维低硬度值是作为一般指南提出的，本发明并不局限于和这些完全一样的温度或硬度值。采用退火工序时，退火时间并不限于30分钟。粗糙化内引线的粗糙度可以大于1.0微米，粗糙化的方法也不局限于腐蚀法。
内引线焊接好之后，IC芯片可以逐个封装或成为多芯片模件的一部分。
本技术领域的行家们都知道，在不脱离下面所述的发明范围的前提下是可以对上述实施例进一步进行修改的。

Claims (8)

1.一种内引线(6)的尖端焊接到半导体集成电路芯片(24)的金属电极(22)上的方法，既无需在所述内引线上形成凸缘，也无需在所述金属电极上形成凸缘，它包括下列工序：
加热焊具(16)的工序，所述加热工序将所述焊具(16)加热到至少460℃但不超过540℃的温度；和
用所述焊具(16)将所述内引线(6)的尖端压在所述金属电极(32)上，从而通过加热同时使所述内引线的所述尖端软化，并将所述内引线的所述尖端压焊到所述金属电极上，
其特征在于，它还包括另一个这样的工序：在所述压接工序之前将所述内引线(6)退火，使所述内引线预软化，所述退火工序是在至少150℃但不高于350℃的温度下进行的。
2.如权利要求1所述的方法，其特征在于，
在所述加热工序将焊具(16)加热到500℃的温度，和上述金属电极为铝电极。
3.如权利要求2所述的方法，其特征在于，所述温度高得足以使所述内引线(6)的所述尖端软化到不超过60的维氏硬度值。
4.如权利要求3所述的方法，其特征在于，所述温度不太高，因而所述内引线(6)的尖端只软化到小于40的维氏硬度值。
5.如权利要求2所述的方法，其特征在于，所述压接工序以至少0.5公斤的压力进行。
6.如权利要求5所述的方法，其特征在于，所述压接力不超过2公斤。
7.如权利要求6所述的方法，其特征在于，所述压接力持续至少0.4秒。
8.如权利要求7所述的方法，其特征在于，所述压接力的持续时间不超过1.6秒。
CN97101097A 1996-02-08 1997-02-05 将内引线焊接到半导体集成电路上的无凸缘方法 Expired - Fee Related CN1105399C (zh)

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EP0789392A3 (en) 1998-02-25
JPH09275125A (ja) 1997-10-21
DE69706720T2 (de) 2002-07-04
US5885892A (en) 1999-03-23
DE69706720D1 (de) 2001-10-25
EP0789392B1 (en) 2001-09-19
JP3558459B2 (ja) 2004-08-25
CN1161570A (zh) 1997-10-08
EP0789392A2 (en) 1997-08-13

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