CN110534514B - Groove-shaped terminal structure of transverse high-voltage power semiconductor device - Google Patents
Groove-shaped terminal structure of transverse high-voltage power semiconductor device Download PDFInfo
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Abstract
The invention provides a groove-shaped terminal structure of a transverse high-voltage power semiconductor device, and belongs to the technical field of semiconductor power devices. A groove-shaped dielectric strip ring is introduced into an N-type lightly doped drift region at the curvature terminal part of the transverse high-voltage power semiconductor device, so that the ring-shaped dielectric in the N-type lightly doped drift region bears the main voltage resistance, and the phenomenon that the high electric field peak value is generated at the metallurgical interface of a source end PN junction caused by the high voltage applied to a drain end, and the voltage resistance of the device is reduced is avoided. Because the critical breakdown electric field of the dielectric groove is far higher than that of the silicon material, the invention can reduce the width of the curvature terminal of the device, leads the electric field lines to be more concentrated without breakdown in advance, saves the layout area of the device, is compatible with the CMOS process, and can be used for manufacturing a transverse high-voltage power device with high voltage, high speed and low conduction loss.
Description
Technical Field
The invention belongs to the technical field of semiconductor power devices, and particularly relates to a groove-type terminal structure of a transverse high-voltage power device.
Background
The development of high voltage power integrated circuits has not been feasible with integrated lateral high voltage power devices. High voltage power devices are required to have high breakdown voltage, low on-resistance, and low switching loss. The realization of a high breakdown voltage of a lateral high-voltage power device requires that a drift region for bearing withstand voltage has low doping concentration, but in order to meet the requirement of low on-resistance of the device, the drift region serving as a current channel is required to have high doping concentration. The contradictory relation between the low on-resistance of the MOS device and the voltage resistance of the device limits the application of the device in the field of high voltage and large current. The transverse high-voltage power device is usually in a closed structure, and comprises a circular structure, a racetrack structure, an interdigital structure and the like. For a closed runway-type structure and an interdigital structure, a small-curvature terminal can appear at a curve part and a fingertip part, electric field lines can be concentrated at a small-curvature radius, avalanche breakdown easily occurs in advance at the small-curvature radius of the whole device, and the layout structure of the transverse high-voltage power device is provided with a new challenge. In order to reduce the curvature effect, the widths of a straight path part and an interdigital linear part are often increased to increase the curvature radius of a curve and an interdigital fingertip part, or the straight path part and the interdigital linear part of a device adopt a common structure, the curvature radius is increased at a small curvature radius to form a dumbbell-shaped structure, but the structure occupies a larger chip area by increasing the curvature radius of the curve part and the interdigital fingertip part, thereby bringing unnecessary waste of the layout area of the device and causing the increase of the specific on-resistance of the device.
Disclosure of Invention
The invention aims to solve the technical problem in the prior art and provides a groove-type terminal structure of a transverse high-voltage power device.
In order to solve the above technical problem, an embodiment of the present invention provides a trench terminal structure of a lateral high-voltage power device, including a linear junction terminal structure and a curvature junction terminal structure;
the linear junction terminal structure comprises a P-type substrate, a P-type doped region, an N-type lightly doped drift region, an N-type doped region, a drain region N-type heavily doped contact region, a source region P-type heavily doped contact region, a gate oxide layer, a first dielectric oxide layer, a second dielectric oxide layer, a polysilicon gate, a polysilicon material and a metal material;
the P-type doped region and the N-type lightly doped drift region are positioned on the P-type substrate, the N-type lightly doped drift region is positioned on two sides of the P-type doped region, and the side surfaces of the P-type doped region and the N-type lightly doped drift region are mutually contacted; the second dielectric oxide layer and the polycrystalline silicon material form a discontinuous longitudinal floating field plate which is uniformly distributed in the N-type lightly doped drift region and forms an internal equipotential ring by depending on a metal material, and the first dielectric oxide layer and the metal material are positioned on a first part of the N-type lightly doped drift region; the upper layer of the P-type doped region is provided with a source region N-type heavily doped contact region and a source region P-type heavily doped contact region which are connected with the metalized source electrode, the source region N-type heavily doped contact region is positioned on two sides of the source region P-type heavily doped contact region, and the side surfaces of the source region N-type heavily doped contact region and the source region P-type heavily doped contact region are mutually contacted; the gate oxide layer is positioned on the P-type doped region, the N-type heavily doped contact region of the partial source region and the second part of the N-type lightly doped drift region, and the polycrystalline silicon gate is positioned on the gate oxide layer;
the curvature junction terminal structure comprises a P-type substrate, a P-type doped region, an N-type lightly doped drift region, an N-type doped region, a drain region N-type heavily doped contact region, a source region P-type heavily doped contact region, a gate oxide layer, a first dielectric oxide layer, a second dielectric oxide layer, a polysilicon gate, a polysilicon material and a metal material; the gate oxide layer and the first dielectric oxide layer are positioned on the third part of the N-type lightly doped drift region, the polysilicon gate is positioned on the gate oxide layer, and the polysilicon gate, the gate oxide layer, the first dielectric oxide layer, the metal material, the N-type lightly doped drift region and the N-type heavily doped drain region contact region in the curvature junction terminal structure are respectively connected with the polysilicon gate, the gate oxide layer, the first dielectric oxide layer, the metal material, the N-type lightly doped drift region and the N-type heavily doped drain region contact region in the linear junction terminal structure to form an annular structure; the N-type heavily doped contact region of the drain region in the curvature junction terminal structure surrounds the N-type lightly doped drift region, and the N-type lightly doped drift region in the curvature junction terminal structure surrounds the gate oxide layer and the first dielectric oxide layer;
second dielectric oxide layer and poly-N-type lightly doped drift region of curvature junction termination structureA plurality of equipotential dielectric rings are formed by crystalline silicon materials; and L isa≥2LbWherein L isaDenotes the lateral length of the curvature junction termination structure, LbThe longitudinal length of the curvature junction termination structure is indicated.
On the basis of the technical scheme, the invention can be further improved as follows.
Further, LbForeshortening and reducing or removing a portion of one of the plurality of dielectric rings.
Further, a P-type doping layer is introduced on the surface of the N-type lightly doped drift region in the linear junction terminal structure and the curvature junction terminal structure to form a double RESURF structure.
Further, the P-type doped layer adopts a linear variable doping technology: the N-type heavily doped contact region is closer to the drain region, and the doping concentration is higher.
Further, a P-type doped layer is introduced into the N-type lightly doped drift region in the linear junction terminal structure and the curvature junction terminal structure to form a triple RESURF structure.
Furthermore, a longitudinal super junction structure is introduced on the surface of the N-type lightly doped drift region in the linear junction terminal structure and the curvature junction terminal structure, wherein the longitudinal super junction structure is composed of an N-type doped layer and a P-type doped layer which are longitudinally distributed.
Furthermore, a transverse super junction structure is introduced on the surface of the N-type lightly doped drift region in the linear junction terminal structure and the curvature junction terminal structure, wherein the transverse super junction structure is composed of an N-type doped layer and a P-type doped layer which are transversely distributed, and the positions of the N-type doped layer and the P-type doped layer can be interchanged.
Further, the second dielectric oxide layer and the polysilicon material extend downwards into the P-type substrate through the N-type lightly doped drift region.
The invention has the beneficial effects that: according to the invention, a plurality of communicated equipotential dielectric rings are introduced into the curvature junction terminal structure, so that the withstand voltage of the terminal region is borne by not only the curvature PN junction formed by the N-type drift region and the P-type doped region, but also the dielectric rings participate in the withstand voltage, and compared with the terminal structure without the dielectric rings, most of the withstand voltage is borne by the introduction of the dielectric rings. Because the critical breakdown electric field of the medium is far higher than that of the silicon material, the collection of more dense power lines can be borne, so that the area of the terminal area is reduced and the layout area of a device is saved on the premise of ensuring the withstand voltage of the terminal area.
Drawings
Fig. 1 is a schematic structural diagram of a fingertip portion of a slot termination structure of a lateral high-voltage power device according to a first embodiment of the present invention, wherein (a) is a top view and (b) is a front view;
fig. 2 is a schematic structural diagram of a fingertip portion of a slot termination structure of a lateral high-voltage power device according to a second embodiment of the present invention, wherein (a) is a top view and (b) is a front view;
fig. 3 is a schematic structural diagram of a fingertip portion of a slot termination structure of a lateral high-voltage power device according to a third embodiment of the present invention, wherein (a) is a top view and (b) is a front view;
fig. 4 is a schematic cross-sectional view of a trench termination structure of a lateral high-voltage power device according to a fourth embodiment of the present invention, wherein (a) is a three-dimensional schematic view of a linear junction termination structure of the device, and (b) is a three-dimensional schematic view of a part of the device of a curvature junction termination structure of the device;
fig. 5 is a schematic cross-sectional view of a trench termination structure of a lateral high-voltage power device according to a fifth embodiment of the present invention, wherein (a) is a three-dimensional schematic view of a linear junction termination structure of the device, and (b) is a three-dimensional schematic view of a part of the device of a curvature junction termination structure of the device;
fig. 6 is a schematic cross-sectional view of a trench termination structure of a lateral high-voltage power device according to a sixth embodiment of the present invention, wherein (a) is a three-dimensional schematic view of a linear junction termination structure of the device, and (b) is a three-dimensional schematic view of a part of the device of a curvature junction termination structure of the device;
fig. 7 is a schematic cross-sectional view of a trench termination structure of a lateral high-voltage power device according to a seventh embodiment of the present invention, wherein (a) is a three-dimensional schematic view of a linear junction termination structure of the device, and (b) is a three-dimensional schematic view of a part of the device with a curvature junction termination structure of the device;
fig. 8 is a schematic cross-sectional view of a trench termination structure of a lateral high-voltage power device according to an eighth embodiment of the present invention, wherein (a) is a three-dimensional schematic view of a linear junction termination structure of the device, and (b) is a three-dimensional schematic view of a portion of the device with a curvature junction termination structure of the device;
in the drawings, the components represented by the respective reference numerals are listed below:
1. the semiconductor device comprises a source region P type heavily doped contact region, 2 a source region N type heavily doped contact region, 3 a polysilicon gate, 4 a gate oxide layer, 5 a first dielectric oxide layer, 6 a metal material, 7 a P type doped region, 8 an N type lightly doped drift region, 9 a second dielectric oxide layer, 10 a polysilicon material, 11 a P type substrate, 12 an N type doped region, 13 a drain region N type heavily doped contact region, 14 a P type doped layer, 15 an N type doped layer.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1, a first embodiment of the present invention provides a trench type termination structure of a lateral high-voltage power device, which includes a linear junction termination structure and a curvature junction termination structure;
the linear junction terminal structure comprises a P-type substrate 11, a P-type doped region 7, an N-type lightly doped drift region 8, an N-type doped region 12, a drain region N-type heavily doped contact region 13, a source region N-type heavily doped contact region 2, a source region P-type heavily doped contact region 1, a gate oxide layer 4, a first dielectric oxide layer 5, a second dielectric oxide layer 9, a polycrystalline silicon gate 3, a polycrystalline silicon material 10 and a metal material 6;
the P-type doped region 7 and the N-type lightly doped drift region 8 are positioned on the P-type substrate 11, the N-type lightly doped drift region 8 is positioned on two sides of the P-type doped region 7, and the side surfaces of the P-type doped region 7 and the N-type lightly doped drift region 8 are mutually contacted; the second dielectric oxide layer 9 and the polysilicon material 10 form a discontinuous longitudinal floating field plate which is uniformly distributed in the N-type lightly doped drift region 8 and forms an internal equipotential ring by means of the metal material 6, and the first dielectric oxide layer 5 and the metal material 6 are positioned on a first part of the N-type lightly doped drift region 8; the upper layer of the P-type doped region 7 is provided with a source region N-type heavily doped contact region 2 and a source region P-type heavily doped contact region 1 which are connected with a metalized source electrode, the source region N-type heavily doped contact region 2 is positioned on two sides of the source region P-type heavily doped contact region 1, and the side surfaces of the source region N-type heavily doped contact region 2 and the source region P-type heavily doped contact region 1 are mutually contacted; the gate oxide layer 4 is positioned on the P-type doped region 7, the partial source region N-type heavily doped contact region 2 and the second part of the N-type lightly doped drift region 8, and the polysilicon gate 3 is positioned on the gate oxide layer 4;
the curvature junction terminal structure comprises a P-type substrate 11, a P-type doped region 7, an N-type lightly doped drift region 8, an N-type doped region 12, a drain region N-type heavily doped contact region 13, a source region N-type heavily doped contact region 2, a source region P-type heavily doped contact region 1, a gate oxide layer 4, a first dielectric oxide layer 5, a second dielectric oxide layer 9, a polycrystalline silicon gate 3, a polycrystalline silicon material 10 and a metal material 6; the gate oxide layer 4 and the first dielectric oxide layer 5 are positioned on the third part of the N-type lightly doped drift region 8, the polysilicon gate 3 is positioned on the gate oxide layer 4, and the polysilicon gate 3, the gate oxide layer 4, the first dielectric oxide layer 5, the metal material 6, the N-type lightly doped drift region 8 and the drain region N-type heavily doped contact region 13 in the curvature junction terminal structure are respectively connected with the polysilicon gate 3, the gate oxide layer 4, the first dielectric oxide layer 5, the metal material 6, the N-type lightly doped drift region 8 and the drain region N-type heavily doped contact region 13 in the linear junction terminal structure to form an annular structure; the N-type heavily doped contact region 13 of the drain region in the curvature junction terminal structure surrounds the N-type lightly doped drift region 8, and the N-type lightly doped drift region 8 in the curvature junction terminal structure surrounds the gate oxide layer 4 and the first dielectric oxide layer 5;
a second dielectric oxide layer 9 and a polycrystalline silicon material 10 in an N-type lightly doped drift region 8 of the curvature junction terminal structure form a plurality of equipotential dielectric rings; and L isa＞2LbWherein L isaDenotes the lateral length of the curvature junction termination structure, LbThe longitudinal length of the curvature junction termination structure is indicated.
In the above embodiment, the device of the present invention introduces a plurality of connected equipotential dielectric rings into the curvature junction termination structure, so that the withstand voltage of the termination region is not only borne by the curvature Pn junction formed by the N-type drift region and the P-type doped region, but also the dielectric rings participate in the withstand voltage, and compared with the termination structure without the dielectric rings, the introduction of the dielectric rings bears most of the withstand voltage. Because the critical breakdown electric field of the medium is far higher than that of the silicon material, the collection of more dense power lines can be borne, so that the area of the terminal area can be reduced and the layout area of a device can be saved on the premise of ensuring the voltage resistance of the terminal area. The longitudinal length a and the transverse length B of the dielectric ring may be the same or different.
The working principle of the invention is as follows:
the structure of the linear junction terminal is the same as that of the active region of the transverse high-voltage power device, the P-type doped region 7 is connected with the N-type lightly doped drift region 8, when high voltage is applied to the drain electrode, the Pn junction metallurgical junction surface formed by the P-type doped region 7 and the N-type lightly doped drift region 8 begins to be exhausted, the depletion region of the N-type lightly doped drift region 8 mainly bears withstand voltage, and the electric field peak value appears on the Pn junction metallurgical junction surface formed by the P-type doped region 7 and the N-type lightly doped drift region 8. If the curvature junction terminal structure of the device adopts a traditional structure, the electric field peak value at the Pn junction metallurgical junction surface formed by the P-type doped region 7 and the N-type lightly doped drift region 8 can quickly reach the critical electric field value of silicon due to the high concentration of the electric lines at the Pn junction metallurgical junction surface formed by the P-type doped region 7 and the N-type lightly doped drift region 8 caused by the curvature effect, so that the avalanche breakdown of the device occurs in advance. Therefore, the curvature junction terminal structure solves the problem that early avalanche breakdown occurs in the period caused by the high concentration of power lines of a Pn junction curvature metallurgical junction surface formed by the highly doped P-type doped region 7 and the N-type lightly doped drift region 8.
As shown in fig. 2, a second embodiment of the present invention provides a trench termination structure of a lateral high-voltage power device, and this embodiment is based on the first embodiment and makes L be LaIs equal to 2Lb。
As shown in fig. 3, a third embodiment of the present invention provides a trench termination structure of a lateral high-voltage power device, and this embodiment shortens L based on the first embodimentbAnd reducing the plurality of dielectric rings or removing a portion of one of the plurality of dielectric rings. The embodiment further reduces the area of the fingertip part of the device and saves the layout area of the device.
As shown in fig. 4, a fourth embodiment of the present invention provides a trench termination structure of a lateral high-voltage power device, and in this embodiment, on the basis of the first embodiment, a P-type doped layer 14 is introduced on the surface of an N-type lightly doped drift region 8 in the linear junction termination structure and the curvature junction termination structure, so as to form a dual RESURF structure.
As shown in fig. 5, a fifth embodiment of the present invention provides a trench termination structure of a lateral high-voltage power device, and this embodiment is based on the fourth embodiment, wherein the P-type doped layer 14 employs a linear variable doping technique: the doping concentration of the N-type heavily doped contact region 13 is higher as the contact region is closer to the drain region. In the above embodiment, the P-type doped layer 14 includes a plurality of regions 141, 142 … 14n, where n is a positive integer, and the doping concentrations of the regions are gradually increased.
As shown in fig. 6, a sixth embodiment of the present invention provides a trench termination structure of a lateral high-voltage power device, and in this embodiment, on the basis of the first embodiment, a P-type doped layer 14 is introduced into an N-type lightly doped drift region 8 in the linear junction termination structure and the curvature junction termination structure, so as to form a triple RESURF structure.
As shown in fig. 7, a seventh embodiment of the present invention provides a trench type termination structure of a lateral high-voltage power device, and in this embodiment, on the basis of the first embodiment, a longitudinal super junction structure is introduced on the surface of the N-type lightly doped drift region 8 in the linear junction termination structure and the curvature junction termination structure, where the longitudinal super junction structure is formed by the N-type doped layer 15 and the P-type doped layer 14 which are distributed longitudinally.
As shown in fig. 8, an eighth embodiment of the present invention provides a trench type termination structure of a lateral high-voltage power device, and in this embodiment, on the basis of the first embodiment, a lateral super junction structure is introduced on the surface of the N-type lightly doped drift region 8 in the linear junction termination structure and the curvature junction termination structure, where the lateral super junction structure is formed by laterally distributed N-type doped layer 15 and P-type doped layer 14, and the positions of the N-type doped layer 15 and the P-type doped layer 14 can be interchanged.
In the above embodiment, the super junction structure is composed of the P-type doped layer 14 and the N-type doped layer 15 which are arranged in the same manner, as shown in fig. 8, the super junction structure provides a low-resistance current path for the device in the on state, and maintains a high device withstand voltage in the off state, thereby well optimizing the relationship between the specific on-resistance and the breakdown voltage of the device. The difference in arrangement of the super junction structure P-type doped layer 14 and the N-type doped layer 15 on the surface of the N-type lightly doped drift region 8 may cause different electric field distribution conditions on the surface of the device, thereby affecting the breakdown voltage of the device.
Optionally, the second dielectric oxide layer 9 and the polysilicon material 10 extend down through the N-type lightly doped drift region 8 into the P-type substrate 11.
According to the device, the groove-shaped dielectric strip ring is introduced into the N-type lightly doped drift region at the end part of the curvature junction of the transverse high-voltage power semiconductor device, so that the ring-shaped dielectric in the N-type lightly doped drift region bears the main voltage resistance, and the situation that the high electric field peak value is generated on the metallurgical interface of the source end Pn junction caused by the high voltage applied to the drain end, and the voltage resistance of the device is reduced is avoided. Because the critical breakdown electric field of the dielectric groove is far higher than that of the silicon material, the invention can reduce the width of the curvature terminal of the device, leads the electric field lines to be more concentrated without breakdown in advance, saves the layout area of the device, is compatible with the CMOS process, and can be used for manufacturing a transverse high-voltage power device with high voltage, high speed and low conduction loss.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (8)
1. A groove-shaped terminal structure of a transverse high-voltage power device comprises a linear junction terminal structure and a curvature junction terminal structure;
the linear junction terminal structure comprises a P-type substrate (11), a P-type doped region (7), an N-type lightly doped drift region (8), an N-type doped region (12), a drain region N-type heavily doped contact region (13), a source region N-type heavily doped contact region (2), a source region P-type heavily doped contact region (1), a gate oxide layer (4), a first dielectric oxide layer (5), a second dielectric oxide layer (9), a polycrystalline silicon grid electrode (3), a polycrystalline silicon material (10) and a metal material (6);
the P-type doped region (7) and the N-type lightly doped drift region (8) are positioned on the P-type substrate (11), the N-type lightly doped drift region (8) is positioned on two sides of the P-type doped region (7), and the side surfaces of the P-type doped region (7) and the N-type lightly doped drift region (8) are mutually contacted; the second dielectric oxide layer (9) and the polycrystalline silicon material (10) form a discontinuous longitudinal floating field plate which is uniformly distributed in the N-type lightly doped drift region (8) and forms an in-vivo equipotential ring by means of the metal material (6), and the first dielectric oxide layer (5) and the metal material (6) are positioned on a first part of the N-type lightly doped drift region (8); the upper layer of the P-type doped region (7) is provided with a source region N-type heavily doped contact region (2) and a source region P-type heavily doped contact region (1) which are connected with a metalized source electrode, the source region N-type heavily doped contact region (2) is positioned on two sides of the source region P-type heavily doped contact region (1), and the side surfaces of the source region N-type heavily doped contact region (2) and the source region P-type heavily doped contact region (1) are mutually contacted; the gate oxide layer (4) is positioned on the P-type doped region (7), a part of the source region N-type heavily doped contact region (2) and a second part of the N-type lightly doped drift region (8), and the polysilicon gate (3) is positioned on the gate oxide layer (4);
the curvature junction terminal structure comprises a P-type substrate (11), a P-type doped region (7), an N-type lightly doped drift region (8), an N-type doped region (12), a drain region N-type heavily doped contact region (13), a source region N-type heavily doped contact region (2), a source region P-type heavily doped contact region (1), a gate oxide layer (4), a first dielectric oxide layer (5), a second dielectric oxide layer (9), a polycrystalline silicon grid electrode (3), a polycrystalline silicon material (10) and a metal material (6); the gate oxide layer (4) and the first medium oxide layer (5) are positioned on the third part of the N-type lightly doped drift region (8), the polysilicon gate (3) is positioned on the gate oxide layer (4), and the polysilicon gate (3), the gate oxide layer (4), the first medium oxide layer (5), the metal material (6), the N-type lightly doped drift region (8) and the drain region N-type heavily doped contact region (13) in the curvature junction terminal structure are respectively connected with the polysilicon gate (3), the gate oxide layer (4), the first medium oxide layer (5), the metal material (6), the N-type lightly doped drift region (8) and the drain region N-type heavily doped contact region (13) in the linear junction terminal structure to form an annular structure; the N-type heavily doped contact region (13) of the drain region in the curvature junction terminal structure surrounds the N-type lightly doped drift region (8), and the N-type lightly doped drift region (8) in the curvature junction terminal structure surrounds the gate oxide layer (4) and the first dielectric oxide layer (5);
the method is characterized in that a second dielectric oxide layer (9) in an N-type lightly doped drift region (8) of a curvature junction terminal structure and a polycrystalline silicon material (10) form a plurality of equipotential dielectric rings; and L isa≥2LbWherein L isaDenotes the lateral length of the curvature junction termination structure, LbThe longitudinal length of the curvature junction termination structure is indicated.
2. The trench termination structure of claim 1 wherein L is LbShortening and reducing the plurality of rings of equipotential media or removing a portion of one of the plurality of rings of equipotential media.
3. The trench termination structure of a lateral high voltage power device according to claim 1, wherein a P-type doped layer (14) is introduced at the surface of the N-type lightly doped drift region (8) in the straight junction termination structure and the curved junction termination structure to form a dual RESURF structure.
4. The trench termination structure of a lateral high-voltage power device according to claim 3, wherein the P-type doped layer (14) adopts a linear variable doping technique: the N type heavily doped contact region (13) is closer to the drain region, and the doping concentration is higher.
5. The trench termination structure of a lateral high voltage power device according to claim 1, characterized in that a P-type doped layer (14) is introduced inside the N-type lightly doped drift region (8) in the straight junction termination structure and the curved junction termination structure to form a triple RESURF structure.
6. The trench termination structure of a lateral high voltage power device according to claim 1, characterized in that a longitudinal super junction structure is introduced at the surface of the N-type lightly doped drift region (8) in the straight junction termination structure and the curvature junction termination structure, wherein the longitudinal super junction structure is composed of a longitudinally distributed N-type doped layer (15) and a longitudinally distributed P-type doped layer (14).
7. The trench termination structure of a lateral high voltage power device according to claim 1, characterized in that a lateral super junction structure is introduced at the surface of the N-type lightly doped drift region (8) in the straight junction termination structure and the curvature junction termination structure, wherein the lateral super junction structure is composed of a laterally distributed N-type doped layer (15) and a P-type doped layer (14), and the positions of the N-type doped layer (15) and the P-type doped layer (14) can be interchanged.
8. The trench termination structure of a lateral high voltage power device according to claim 1, characterized in that the second dielectric oxide layer (9) and the polysilicon material (10) extend down into the P-type substrate (11) through the N-type lightly doped drift region (8).
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| CN111816707B (en) * | 2020-08-28 | 2022-03-08 | 电子科技大学 | Equipotential drop field device for eliminating in-vivo curvature effect and manufacturing method thereof |
| CN112164719B (en) * | 2020-08-28 | 2022-03-08 | 电子科技大学 | Low resistance device with equipotential floating groove and manufacturing method thereof |
| CN114695511B (en) * | 2020-12-30 | 2023-11-24 | 无锡华润上华科技有限公司 | Lateral diffusion metal oxide semiconductor device and manufacturing method thereof |
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