CN110476259B - 用于制造光电子器件的方法和光电子器件 - Google Patents

用于制造光电子器件的方法和光电子器件 Download PDF

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CN110476259B
CN110476259B CN201880020669.3A CN201880020669A CN110476259B CN 110476259 B CN110476259 B CN 110476259B CN 201880020669 A CN201880020669 A CN 201880020669A CN 110476259 B CN110476259 B CN 110476259B
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metal
layer
seed layer
semiconductor chip
light sources
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CN110476259A (zh
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吉多·韦斯
克里斯托弗·施瓦茨迈尔
多米尼克·斯科尔茨
妮科尔·海策尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Abstract

本发明涉及一种用于制造光电子器件的方法，包括如下方法步骤：A)提供半导体芯片(1)，所述半导体芯片具有有源区(11)，所述有源区设计用于发射辐射，B)将种晶层(4)施加到半导体芯片(1)上，其中种晶层(4)具有第一金属和与第一金属不同的第二金属，其中第二金属不如第一金属贵重，C)将结构化的光刻胶层(9)直接施加到种晶层(4)上，以及D)将焊料层(10)至少施加到种晶层(4)的未被光刻胶层(9)覆盖的区域上，其中在种晶层(4)中第一金属与第二金属的比例在95:5至99:1之间。

Description

用于制造光电子器件的方法和光电子器件
技术领域
本发明涉及一种用于制造光电子器件的方法。此外，本发明涉及一种光电子器件。
背景技术
为了电镀地沉积焊料层的金属，例如由金构成的焊料层的金属，需要由金构成的种晶层来进行生长。焊料层可以借助于光刻技术结构化地施加。为此，需要薄的氮化硅层作为增附剂，所述氮化硅层施加在种晶层与光刻胶层之间，以便能够实现光刻胶层充分粘附在种晶层上。然而，必须将由氮化硅构成的增附剂在电镀之前打开并且再次去除。在去除增附剂时通常使用等离子体工艺。然而，所述等离子体工艺的刻蚀结果并不可复现地良好，使得增附剂至少部分地保留在器件中。
发明内容
本发明的目的是，提供一种改进的光电子器件。尤其地，应克服上文所描述的缺点。此外，本发明的目的是，提供一种改进的用于制造光电子器件的方法。
所述目的通过一种用于制造光电子器件的方法来实现。本发明的有利的设计方案和改进方案是下面描述的主题。此外，所述目的通过一种光电子器件来实现。本发明的有利的设计方案和改进方案是下面描述的主题。
在至少一个实施方式中，用于制造光电子器件的方法具有如下方法步骤：
A)提供半导体芯片，所述半导体芯片具有有源区，所述有源区设计用于发射辐射，
B)将种晶层施加到半导体芯片上，其中种晶层具有第一金属和与第一金属不同的第二金属，其中第二金属不如第一金属贵重，
C)将结构化的光刻胶层直接施加到种晶层上，以及
D)将焊料层至少施加到种晶层的未被光刻胶层覆盖的区域上，其中在种晶层(4)中第一金属与第二金属的比例在95:5到99:1之间。
发明人已认识到，通过这里所描述的方法不再需要薄的粘附层，尤其由氮化硅构成的粘附层，该粘附层用作为光刻胶层和种晶层之间的增附剂。在此，避免例如借助于等离子体工艺耗费地去除增附剂。这节约了时间、材料和成本。此外，该方法由于工艺节省而具有更高的收益获取、工艺简化和成本降低。
优选地，该方法以方法步骤的所给出的顺序来执行。
根据至少一个实施方式，该方法具有步骤A)：提供半导体芯片。半导体芯片具有有源区。有源区设计为发射辐射。
根据至少一个实施方式，半导体芯片具有至少一个半导体层序列。该半导体层序列优选具有III-V族化合物半导体材料。该半导体材料例如是氮化物化合物半导体材料，如AlnIn1-n-mGamN，或是磷化物化合物半导体材料，如AlnIn1-n-mGamP，或也是砷化物化合物半导体材料，如AlnIn1-n-mGamAs，其中分别有0≤n≤1，0≤m≤1且n+m≤1。在此，半导体层序列可以具有掺杂材料以及附加的组成部分。然而出于简单原因，仅说明半导体层序列的晶格的主要组成部分，即Al、As、Ga、In、N或P，即使这些组成部分可以部分被少量其他物质替代和/或补充时也如此。
半导体层序列包含有源区，所述有源区具有至少一个pn结和/或具有一个或多个量子阱结构。在半导体芯片运行中，在有源区中产生电磁辐射。辐射的波长优选在紫外和/或可见范围中，尤其在420nm和680nm之间的、例如在440nm和480nm之间的波长处，其中包括边界值。
根据至少一个实施方式，半导体芯片是发光二极管，简称LED。半导体层序列于是优选设计为发射蓝色光。该器件优选设计为，发射白色光、蓝色光、红色光或绿色光。
除了半导体层序列之外，半导体芯片可以具有附加的接触部。尤其地，半导体芯片具有p型接触部和n型接触部。接触部设计为，向外电接触相应的半导体层序列，即n型掺杂的半导体层和p型掺杂的半导体层。接触部可以设置在半导体层序列和种晶层之间。
根据至少一个实施方式，该方法包括附加的方法步骤：借助于剥离方法(lift-off)去除光刻胶层。该方法步骤优选在步骤D)之后进行。
光刻胶层在此尤其用于掩盖，以便能够实现结构化地施加焊料层。光刻胶层尤其并不残留在制成的器件中。因此，必须去除所述光刻胶层。
根据至少一个实施方式，该方法包括附加的方法步骤：将种晶层的未被或未曾被光刻胶层覆盖的区域去除。去除可以借助于湿化学刻蚀方法、例如利用氰化钾溶液来进行。
尤其地，该方法步骤在去除光刻胶层之后进行。种晶层尤其可以在结构化的焊料层的区域之间被去除。由此可以产生结构化的种晶层。
根据至少一个实施方式，该方法具有步骤B)：将种晶层施加到半导体芯片上。尤其地，将种晶层直接施加到半导体芯片上。直接在此表示紧邻，即在种晶层和半导体芯片之间没有设置其他元件和/或层。替选地，种晶层也可以间接地、即非紧邻地设置在半导体芯片上。
根据至少一个实施方式，该器件具有种晶层。种晶层具有第一金属。第一金属可以是金、银、铂或铜。
根据至少一个实施方式，种晶层具有与第一金属不同的第二金属。第二金属不如第一金属贵重。第二金属优选是锌、锡或铝。
不贵重在此可以表示：第二金属具有关于标准氢电极的负的标准电位。非贵金属、如例如锌在正常条件下与空气中的氧反应成氧化锌，即所述非贵金属氧化。铝同样可以氧化成氧化铝并且由此构成耐腐蚀的氧化物层，所述氧化物层阻止进一步氧化。第二金属不如第一金属贵重，也可以表示：第二金属具有比第一金属更小的标准电位。相应的金属的以伏特为单位的标准电位E0从如下表中获取。
标准电位在标准条件下在25℃和1.013bar下在1摩尔溶液中测量。
根据至少一个实施方式，在种晶层中第一金属是金和第二金属是锌。
根据至少一个实施方式，第二金属的份额在0.5重量％和10重量％之间，尤其在1重量％和4重量％之间，特别优选在2重量％和3.5重量％之间，例如为3重量％。第二金属优选是锌。
根据至少一个实施方式，将种晶层退火。退火例如可以在室温到350℃之间、例如在50℃和300℃之间、例如在150℃和250℃之间、例如在200℃的温度下进行。由此，第二金属、尤其锌可以扩散到种晶层的表面处并且可能氧化成氧化锌。由此，种晶层也承担增附层的功能，所述种晶层因此能够实现将光刻胶层粘附到种晶层上。在此不再需要例如由氮化硅构成的附加的增附层或粘附层，所述增附层或粘附层迄今为止需要用于将光刻胶层接合到金种晶层上。
尤其由于退火，锌扩散到种晶层的表面上。
根据至少一个实施方式，在种晶层中第一金属与第二金属的比例在95:5到99:3之间，尤其为98:2，尤其为97:3。
根据至少一个实施方式，种晶层具有在50nm到5000nm之间、尤其在100nm到500nm之间、特别优选在150nm和350nm之间、例如为200nm的层厚度。
根据至少一个实施方式，在光刻胶层与种晶层之间的区域没有增附剂层。尤其地，在焊料层的两个结构化的区域之间的横向区域没有用于增附的氮化物层，优选没有氮化硅。
发明人已认识到，通过种晶层的特定的组分，尤其通过将第二金属、如锌添加到种晶层中，可以省去用于接合光刻胶层的另外的粘附层。这节约了工艺成本，材料和时间。
根据至少一个实施方式，种晶层对于在有源区中产生的辐射反射性地构成。
根据至少一个实施方式，焊料层具有金属。焊料层也可以具有多于一种金属，例如两种或三种金属。这些金属在此可以作为混合物、例如作为共晶混合物或作为层序列存在。优选地，焊料层具有由金构成的层序列和后续设置的锡层。焊料层可以电镀地沉积。焊料层尤其具有金。焊料层可以具有多个子层。在沉积具有金属的第一子层之后，可以沉积具有其他金属的其他子层，所述其他金属同样是焊料层的组成部分。例如，锌可以沉积到焊料层的金层上。
根据至少一个实施方式，焊料层具有金属，所述金属电镀地沉积，并且对应于种晶层的第一金属。换言之，焊料层和种晶层具有相同的第一金属。优选地，第一金属是金。尤其，种晶层的第二金属不是焊料层的组成部分。
根据至少一个实施方式，器件设计为，安装在自适应探照灯中。尤其地，自适应探照灯是自适应前照灯。自适应探照灯、例如用于车辆的自适应探照灯是如下探照灯，其照明强度和方向可以匹配于行驶状态和交通状况，使得可以最优地照亮车道。
根据至少一个实施方式，器件具有多个光产生区域，所述光产生区域具有p型接触部和n型接触部。附加地，光产生区域可以矩阵形地设置。光产生区域优选地设置在与焊料层相对置的侧上，即形成半导体芯片的主辐射出射面。
根据至少一个实施方式，种晶层没有钛。发明人已认识到，通过使用这里所描述的种晶层可以省去增附剂，尤其由氮化硅构成的增附剂，和/或粘附层，尤其由钛构成的粘附层。由此，在施加种晶层之后例如电镀地省去用于选择性去除钛或氮化硅的等离子体工艺。此外，通过不完全地去除这里不再需要的钛，可以避免短路。这通过工艺步骤节省引起收益获取、工艺简化和成本节省。
此外，本发明涉及一种光电子器件。优选地，借助这里所描述的方法产生光电子器件。用于制造光电子器件的所有实施方式和定义也都适合于光电子器件，反之亦然。
根据至少一个实施方式，光电子器件具有带有有源区的半导体芯片。有源区设计为发射辐射。器件具有结构化的种晶层。种晶层具有第一金属和与第一金属不同的第二金属。第二金属不如第一金属贵重。种晶层尤其直接地或间接地设置在半导体芯片上。器件具有焊料层，该焊料层直接设置在种晶层上，其中在种晶层(4)中第一金属与第二金属的比例在95:5到99:1之间。
根据至少一个实施方式，焊料层结构化地施加。在这里和在下文中用结构化表示，焊料层和/或种晶层和/或光刻胶层非整面地施加到半导体芯片上，而是产生相应的层的如下区域，所述区域在侧向横截面中看横向地和空间上彼此间隔开。
根据至少一个实施方式，焊料层具有第一金属。
根据至少一个实施方式，焊料层除了第一金属之外还具有锡作为第二金属。
附图说明
其他优点、有利的实施方式和改进方案从下面结合附图所描述的实施例中得到。
附图示出：
图1A至1E示出用于制造光电子器件的方法，
图2A至2B示出根据一个实施方式的光电子器件的示意侧视图，
图3A至3D示出根据一个实施方式的光电子器件的示意俯视图或侧视图，
图4A至4C示出根据一个实施方式或根据比较例的光电子器件的示意俯视图或侧视图，以及
图5A和5B示出根据一个实施方式的半导体芯片。
具体实施方式
在这些实施例和附图中，相同的、相似的或作用相同的元件可以用相同的附图标记表示。所示出的元件以及其彼此间的大小关系并不能视为是合乎比例的。更确切地说，为了更好的可视性和/或为了更好的理解可夸大地示出个别元件，例如层、构件、器件和区域。
图1A至1E示出根据一个实施方式的用于制造光电子器件的方法。
如在图1A中所示，提供半导体芯片1。例如，半导体芯片1是氮化镓半导体芯片。在所述半导体芯片1上可以施加种晶层4，尤其整面地施加(图1B)。如在图1B中所示，将光刻胶层9结构化地施加到所述种晶层4上。将光刻胶层9优选直接施加到种晶层4上。光刻胶可以是正光刻胶、负光刻胶或反光刻胶。例如，AZ 15nXT可以用作为光刻胶。种晶层4具有第一金属、例如金和与第一金属不同的第二金属、例如锌。第一金属相对于第二金属的份额优选为97:3。
接着，如在图1C中所示，将焊料层10至少施加到种晶层4的未被光刻胶层9覆盖的区域上。换言之，光刻胶层9在此用作为掩模，其中在未被掩模覆盖的区域之间施加焊料层10。焊料层10相对于结构化的光刻胶层9横向地设置。
接着，如在图1D中所示，可以再次去除光刻胶层9。去除光刻胶层9可以借助于剥离方法进行。接着可以去除种晶层4的被光刻胶层9覆盖的区域。尤其在焊料层10的结构化的区域之间的区域中去除种晶层4可以借助于湿化学刻蚀方法去除(图1E)。优选地，种晶层4在所述区域中被完全去除，以便避免短路。
图2A和2B分别示出根据一个实施方式的光电子器件的示意性侧视图。器件具有半导体芯片1。在半导体芯片上优选结构化地设置有种晶层4。种晶层4紧跟着焊料层10。焊料层10优选由层序列成形，例如由金和锡构成的层序列。
图2B的器件与图2A的器件的区别在于，这里附加地示出半导体芯片1的接触部5、6，尤其半导体芯片的n型接触部5和p型接触部6。两个接触部5、6通过介电层2、例如由二氧化硅构成的介电层彼此电隔离，以便避免短路。此外，图2B的器件具有凹进部或加深部81。在制造期间由于去除光刻胶层9出现加深部。
图3A至3D示出根据一个实施方式的光电子器件100的示意俯视图或侧视图。
图3A示出具有多个光产生区域7的器件。光产生区域7这里矩阵形地设置。此外，图3A示出半导体芯片1的半导体层序列或上侧，即用于发射辐射的侧。
图3B示出半导体芯片1的背侧。在半导体芯片1的背侧上可以电镀地安置焊料层10。
图3C示出半导体芯片1的背侧的局部。示出n型接触部5和p型接触部6。这两个接触部在空间上和彼此电隔离。此外示出光刻胶层9。光刻胶层9在接着的方法步骤中再次去除。
图3D示出根据一个实施方式的光电子器件100的示意侧视图。与图2B的器件相比，图3D的器件附加地示出粘附层31。粘附层31例如可以由钛形成。也可以没有粘附层31。
图4A至4C示出根据比较例的器件的示意俯视图或侧视图。图4B和4C分别示出剖视图AA’，如在图4A中所示。这里，使用第二介电层8，尤其由氮化硅构成的第二介电层，以便能够实现将光刻胶层9粘附到种晶层4上。发明人现在已发现：当使用这里所描述的种晶层4、尤其由金和锌构成的种晶层时，可以完全省去第二介电层8。
图5A和5B分别示出根据一个实施方式的半导体芯片1的示意侧视图。
图5A的半导体芯片1具有载体16，在载体上设置有n型接触部5。在n型接触部5之上设置有p型接触部6。此外，半导体芯片1具有半导体层序列，所述半导体层序列具有至少一个p型掺杂的半导体层、至少一个n型掺杂的半导体层和有源区。n型接触部5延伸直至n型掺杂的半导体层进而电接触所述n型掺杂的半导体层。p型接触部6电接触p型掺杂的半导体层12。
图5B示出所谓的倒装芯片的示意侧视图。借此表示，接触部5、6设置在半导体芯片1的相同侧上。半导体芯片1可以设置在载体16上。在此，在图5A和5B中所描述的布置可以附加地具有根据上述实施方案的焊料层10和种晶层4并且可以相应地应用。
结合附图所描述的实施例和其特征也可以根据其他实施例彼此组合，即使这样的组合并未明确地在附图中示出时也如此。此外，结合附图描述的实施例可以具有根据概述部分中的描述的附加的或替换的特征。
本发明并不因根据实施例的描述而局限于此。更确切地说，本发明包括任意新特征以及特征的任意组合，这尤其包含实施例中的特征的任意组合，即使这些特征或组合本身并未明确地在实施例中予以说明时也如此。
本专利申请要求德国专利申请10 2017 106 410.9的优先权，其公开内容通过参引结合于此。
附图标记表
100 光电子器件
1   半导体芯片
11  有源区
12  p型掺杂的半导体层
13  n型掺杂的半导体层
2   介电层
31  粘附层
4   种晶层
5   n型接触部
6   p型接触部
7   光产生区域
8   第二介电层
9   光刻胶层
10  焊料层
81  加深部或凹进部
16  载体

Claims (15)

1.一种用于制造光电子器件的方法，所述方法包括如下方法步骤：
A)提供半导体芯片(1)，所述半导体芯片具有有源区(11)，所述有源区设计用于发射辐射，
B)将种晶层(4)施加到所述半导体芯片(1)上，其中所述种晶层(4)具有第一金属和与所述第一金属不同的第二金属，其中所述第二金属不如所述第一金属贵重，
C)将结构化的光刻胶层(9)直接施加到所述种晶层(4)上，以及
D)将焊料层(10)至少施加到所述种晶层(4)的未被所述光刻胶层(9)覆盖的区域上，
其中在所述种晶层(4)中第一金属与第二金属的比例在95:5至99:1之间。
2.根据权利要求1所述的方法，
其中将种晶层退火。
3.根据权利要求1所述的方法，
所述方法包括另一方法步骤：
借助于剥离方法去除所述光刻胶层(9)。
4.根据权利要求1所述的方法，
所述方法包括另一方法步骤：
借助于湿化学刻蚀方法将所述种晶层(4)的未被所述光刻胶层(9)覆盖的区域去除。
5.根据权利要求1所述的方法，
其中在所述光刻胶层(9)和所述种晶层(4)之间的区域没有用于增附的氮化物层。
6.根据权利要求1所述的方法，
其中所述种晶层(4)没有钛。
7.根据权利要求1所述的方法，
其中所述第一金属是金、银、铂或铜。
8.根据权利要求1所述的方法，
其中所述第二金属是锌、锡或铝。
9.根据权利要求1所述的方法，
其中在所述种晶层(4)中所述第一金属是金并且所述第二金属是锌。
10.根据权利要求1所述的方法，
其中在所述种晶层(4)中所述第二金属的份额在0.5重量％和10重量％之间。
11.根据权利要求1所述的方法，
其中所述种晶层(4)具有在50nm到5000nm之间的层厚度。
12.根据权利要求1所述的方法，
其中所述焊料层(10)具有金属，所述金属电镀地沉积并且对应于所述种晶层(4)的所述第一金属。
13.一种光电子器件(100)，所述光电子器件具有：
-半导体芯片(1)，所述半导体芯片具有有源区(11)，所述有源区设计用于发射辐射，
-结构化的种晶层(4)，所述种晶层具有第一金属和与所述第一金属不同的第二金属，其中所述第二金属不如所述第一金属贵重，其中所述种晶层(4)设置在所述半导体芯片(1)上，
-焊料层(10)，所述焊料层直接设置在所述种晶层(4)上，
其中在所述种晶层(4)中第一金属与第二金属的比例在95:5至99:1之间。
14.根据权利要求13所述的光电子器件(100)，
其中所述焊料层(10)具有第一金属。
15.根据权利要求13或14所述的光电子器件(100)，
其中所述焊料层(10)除了第一金属之外具有锡。
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