CN110473940A - 紫外led的外延结构 - Google Patents
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- 230000004888 barrier function Effects 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000000737 periodic effect Effects 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 12
- 230000005699 Stark effect Effects 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 13
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
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- 238000005036 potential barrier Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 229910000077 silane Inorganic materials 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
本发明提供了一种紫外LED的外延结构，包括：在生长衬底表面依次生长的应力控制层、n型电流扩展层、有源区发光层及p型电流扩展层；其中，有源区发光层为由InaGa1‑aN量子阱层和AlbGa1‑bN势垒层形成的周期性结构，周期为4～7；在该周期性结构中，由下到上InaGa1‑aN量子阱层的厚度逐层增加15％，0.01<a<0.05，最下层的InaGa1‑aN量子阱层的厚度为2～4nm；由下到上AlbGa1‑bN势垒层中的Al组分b逐层增加15％，最下层的AlbGa1‑bN势垒层中0.06<b<0.08，有效缓解了InGaN/AlGaN多量子阱结构的应力，减少晶格缺陷的产生，缓解结构中的量子限制stark效应。
Description
技术领域
本发明涉及LED技术领域，尤其是一种紫外LED的外延结构。
背景技术
在生长短波长365nm-370nm范围的紫外LED结构时，为了减少外延层内部的光子吸收，通常使用N型的AlGaN替代GaN作为电流扩展层；同时，采用高Al组分的AlGaN作为势垒层把载流子限制在多量子阱中进行复合。但是，N型AlGaN电流扩展层和高Al组分的AlGaN势垒层对InGaN量子阱层施加了较大的压应力，产生了诸如界面缺陷等高密度非辐射复合中心的同时，加剧了量子限制stark效应，限制了InGaN量子阱厚度的增加，从而制约了紫外LED光效的提高。
发明内容
为了克服以上不足，本发明提供了一种紫外LED的外延结构，有效缓解现有紫外LED的外延结构中出现的压应力较大等技术问题。
本发明提供的技术方案为：
一种紫外LED的外延结构，包括：在生长衬底表面依次生长的应力控制层、n型电流扩展层、有源区发光层及p型电流扩展层；其中，有源区发光层为由InaGa1-aN量子阱层和AlbGa1-bN势垒层形成的周期性结构，周期为4～7；
在该周期性结构中，由下到上InaGa1-aN量子阱层的厚度逐层增加15％，0.01<a<0.05，最下层的InaGa1-aN量子阱层的厚度为2～4nm；由下到上AlbGa1-bN势垒层中的Al组分b逐层增加15％，最下层的AlbGa1-bN势垒层中0.06<b<0.08。
在本发明提供的紫外LED的外延结构中，有源区发光层中的InaGa1-aN量子阱层厚度逐渐增加，AlbGa1-bN势垒层中的Al组分逐渐提高，有效缓解了InGaN/AlGaN多量子阱结构的应力，减少晶格缺陷的产生，缓解结构中的量子限制stark效应。此外，由结构中压应力的缓冲，靠近电子阻挡层的最后一个周期的发光阱的厚度大幅增加，大大提高了紫外LED的发光效率。
附图说明
图1为本发明中紫外LED的外延结构示意图；
图2为一实例中有源区发光层结构示意图。
附图标记：
1-生长衬底层，2-应力控制层，3-n型电流扩展层，4-有源区发光层，5-p型电流扩展层。
具体实施方式
为了更清楚地说明本发明实施案例或现有技术中的技术方案，下面将对照附图说明本发明的具体实施方式。显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图，并获得其他的实施方式。
如图1所示为本发明提供的紫外LED(发光波长365-370nm)外延结构示意图，从图中看出，该紫外LED的外延结构中包括：在生长衬底(图示中，为硅衬底层1)表面依次生长的应力控制层2、n型电流扩展层3、有源区发光层4及p型电流扩展层5；其中，有源区发光层为由InaGa1-aN量子阱层和AlbGa1-bN势垒层形成的周期性结构，周期为4～7。在该周期性结构中，由下到上InaGa1-aN量子阱层的厚度逐层增加15％，0.01<a<0.05，最下层的InaGa1-aN量子阱层(最靠近电流扩展层3的InaGa1-aN量子阱层)的厚度为2～4nm；由下到上AlbGa1-bN势垒层中的Al组分b逐层增加15％，最下层的AlbGa1-bN势垒层(最靠近电流扩展层3的AlbGa1-bN势垒层)中0.06<b<0.08，且AlbGa1-bN势垒层的厚度为10～15nm，所有AlbGa1-bN势垒层中掺杂有浓度在5×1016～5×1018cm-2之间的硅。
如图2所示，在一实例中，有源区发光层为由3个周期的InaGa1-aN量子阱层和AlbGa1-bN势垒层形成，最下层的InaGa1-aN量子阱层厚度为3nm，往上两个周期InaGa1-aN量子阱层的厚度分别为3.45nm和3.9675nm，a的取值根据发光波长的需求在0.01～0.05之间调整，3个周期中InaGa1-aN量子阱层中的Al组分a不变、AlbGa1-bN势垒层中的Al组分b逐层增加15％，其中，最下层的AlbGa1-bN势垒层中的Al组分b为0.07，往上两个周期AlbGa1-bN势垒层中的Al组分b依次为0.0805和0.092575，厚度均为12nm。
在一实例中，使用MOCVD生长设备、选用Si(111)衬底为硅衬底层1、非掺杂AlN/AlGaN层为应力控制层2，Si掺杂的AlGaN层作为n型电流扩展层3，InaGa1-aN量子阱层和AlbGa1-bN势垒层组成的多量子阱结构作为有源区发光层4，Mg掺杂的AlGaN层作为p型电流扩展层5，具体：
首先，将硅衬底层1放置到MOCVD反应室中，升温到1100℃，并通入H2进行高温表面清洁处理。
随后，将反应室温度设定在800～1200℃，往反应室中通入三甲基铝(TMAl)、氨气(NH3)，在H2作为载气的条件下生长一层AlN，相同条件下在AlN上通过三甲基铝(TMAl)、三甲基镓(TMGa)、氨气(NH3)生长一层AlGaN，形成应力控制层2。
紧接着，以硅烷(SiH4)作为掺杂剂，掺杂浓度为8×1018cm-3，生长温度在900～1100℃，实现n型电流扩展层3的生长，生长出来的n型电流扩展层3为Al组分7％的n型Al0.07Ga0.93N层，厚度3000nm。
之后，反应室温度为750℃，以氮气(N2)作为载气，通入三甲基铟(TMIn)、三乙基镓(TEGa)、氨气(NH3)生长厚度为3nm的In0.02Ga0.98N量子阱层；接着将反应室温度升高到850℃，通入三甲基铝(TMAl)、三乙基镓(TEGa)、氨气(NH3)生长厚度为12nm的Al0.07Ga0.93N势垒层，同时通入硅烷(SiH4)进行掺杂，掺杂浓度2×1018cm-3。之后，以相同的生长条件生长有源区发光层中剩余4个周期，其中，以3nm厚的In0.02Ga0.98N量子阱层为基准，每个周期中的In0.02Ga0.98N量子阱层的厚度逐层增加15％，分别为3.45nm、3.97nm、4.56nm及5.28nm；以Al0.07Ga0.93N势垒层为基准，势垒层中的Al组分逐层增加15％，分比为0.0805和0.0926、0.1065及0.1224，得到有源区发光层。
最后，以H2或者N2作为载气，通入TMAl、TMGa及NH3，且以二茂镁(Cp2Mg)作为掺杂剂在外延生长温度为900℃～1000℃的条件下生长p型电流扩展层5，厚度为80nm。
将紫外LED芯片(包括本实例中紫外LED外延结构制备的紫外LED芯片和普通InGaN/AlGaN量子阱结构制备的紫外LED芯片)切割成1.125*1.125mm大小，在350mA电流下进行光功率测量，本实例中LED芯片的光功率为427mW，普通InGaN/AlGaN量子阱结构的紫外LED芯片的光功率为406mW，可见，使用本发明方法制备得到的紫外LED芯片的光功率得到了提升。
应当说明的是，上述实施例均可根据需要自由组合。以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。
Claims (3)
1.一种紫外LED的外延结构，其特征在于，包括：在生长衬底表面依次生长的应力控制层、n型电流扩展层、有源区发光层及p型电流扩展层；其中，有源区发光层为由InaGa1-aN量子阱层和AlbGa1-bN势垒层形成的周期性结构，周期为4～7；
在该周期性结构中，由下到上InaGa1-aN量子阱层的厚度逐层增加15％，0.01<a<0.05，最下层的InaGa1-aN量子阱层的厚度为2～4nm；由下到上AlbGa1-bN势垒层中的Al组分b逐层增加15％，最下层的AlbGa1-bN势垒层中0.06<b<0.08。
2.如权利要求1所述的紫外LED的外延结构，其特征在于，AlbGa1-bN势垒层的厚度为10～15nm。
3.如权利要求1或2所述的紫外LED的外延结构，其特征在于，AlbGa1-bN势垒层中掺杂有浓度在5×1016～5×1018cm-2之间的硅。
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| CN112382708A (zh) * | 2020-10-30 | 2021-02-19 | 苏州紫灿科技有限公司 | 一种具有组分渐变量子阱结构的深紫外led及制备方法 |
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| CN111129243A (zh) * | 2019-12-02 | 2020-05-08 | 晶能光电（江西）有限公司 | GaN基紫外LED外延结构 |
| CN111129243B (zh) * | 2019-12-02 | 2024-05-17 | 晶能光电股份有限公司 | GaN基紫外LED外延结构 |
| CN112382708A (zh) * | 2020-10-30 | 2021-02-19 | 苏州紫灿科技有限公司 | 一种具有组分渐变量子阱结构的深紫外led及制备方法 |
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