CN110473938A - 一种新型碱抛选择性发射极制程工艺 - Google Patents
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Abstract
本发明涉及碱抛选择性发射极领域。一种新型碱抛选择性发射极制程工艺,碱抛选择性发射极整体的工艺流程采用制绒—扩散—正面激光—碱抛—氧化—正面镀膜—背面镀膜—背面开膜—印刷,在扩散工艺中采用低浓度磷源沉积、高温推进PN结、高浓度表面磷源沉积、后低温推进氧化,正面激光工艺中,单个激光光斑长度为120μm,光斑间距20μm,激光功率30‑34W,激光调制频率200‑240kHz,激光头打标速度25000‑25500mm/min,碱抛工艺中,前后减重控制在0.13‑0.24g。
Description
技术领域
本发明涉及碱抛选择性发射极领域。
背景技术
近期光伏市场已经转为单晶的天下,PERC技术的成熟直接推动单晶产能的快速扩大。目前,单晶PERC背面刻蚀应用较多的主要是酸抛工艺,但酸抛在环保与排废处理方面的压力成为其未来发展的一大阻力。碱抛工艺利用无机碱反应,不存在含氟含氮的情况,成为当前单晶PERC发展的新方向。由于碱抛使用特殊添加剂对非抛光面进行相应的保护,其机理是利用正背面不一样的亲水性实现扩散面的保护,但在实际应用中发现,基体硅材料中掺入杂质磷原子后会极大降低无机碱与硅的反应速率。
发明内容
本发明所要解决的技术问题是:如何在扩散、正面激光、碱抛工艺中进行相关优化调整,充分保护激光掺杂的区域。
本发明所采用的技术方案是:一种新型碱抛选择性发射极制程工艺,碱抛选择性发射极整体的工艺流程采用制绒—扩散—正面激光—碱抛—氧化—正面镀膜—背面镀膜—背面开膜—印刷,在扩散工艺中采用低浓度磷源沉积、高温推进PN结、高浓度表面磷源沉积、后低温推进氧化,正面激光工艺中,单个激光光斑长度为120μm,光斑间距20μm,激光功率30-34W,激光调制频率200-240kHz,激光头打标速度25000-25500mm/min,碱抛工艺中,前后减重控制在0.13-0.24g。
扩散工艺的详细过程为
步骤一、低浓度磷源沉积,沉积压力100-120mbar,沉积温度780-820℃,通大氮流量1200-1400sccm,携磷源小氮流量400-600sccm,通氧气流量350-450sccm,沉积时间17-19min;
步骤二、高温推进PN结,推进压力100-120mbar,温度845-865℃,通大氮流量1500-1900sccm,时间20-25min;
步骤三、高浓度表面磷源沉积,沉积压力100-120mbar,温度810-820℃,通工艺大氮流量500-700sccm,携磷源小氮流量800-1000sccm,通工艺氧气流量750-850sccm,沉积时间6-8min;
步骤四、后低温推进氧化:推进压力100-120mbar,温度720-790℃,通大氮流量1200-1400sccm,通氧流量600-800sccm,时间5-7min。
本发明的有益效果是:1、在扩散过程中,沉积表面磷源时在相对较高的温度下(810℃或者以上),沉积较厚的表面磷源,在后低温推进氧化过程,增加磷源的推进与氧化过程(温度小于等于790℃,大氮流量大于等于1200sccm,氧气流量大于等于600sccm),进一步增厚磷硅玻璃的厚度使得硅基体磷掺杂浓度降低的同时,推结相对较深一些。2、正面激光工艺中,采用镂空激光线(激光光斑不重叠且有一定的间隔),最大程度降低对表面磷硅玻璃的损伤,同时不影响金属化过程中的接触电阻,当硅片浸泡在无机碱溶液中时,非打标区域可充分利用亲水性包围打标区域,更好的保护激光掺杂(打标)的区域。3、在使用合适的现有添加剂的同时,严格控制碱抛前后的减重变化,使添加剂粘附在磷硅玻璃表面保护正面不被刻蚀存在时间临界点,如果在固定碱液浓度下,反应时间越长,越容易出现被刻蚀的情况。
具体实施方式
具体的工艺实施过程如下:
制绒—扩散—正面激光—碱抛—氧化—正面镀膜—背面镀膜—背面开膜—印刷
扩散工艺。最终形成相对较高的表面浓度Ns以及较厚的表面磷硅玻璃X0,但同时整体掺杂浓度较低,PN结较深一些,具体工艺如下:
1)低浓度磷源沉积。首先高温沉积压力100-120mbar,沉积温度780-820℃,通工艺大氮流量1200-1400sccm,携磷源小氮流量400-600sccm,通工艺氧气流量350-450sccm,沉积时间17-19min。
2)高温推进PN结:推进压力100-120mbar,温度845-865℃,通工艺大氮流量流量1500-1900 sccm,时间20-25min;
3)高浓度表面磷源沉积:沉积压力100-120mbar,温度800-810℃,通工艺大氮流量500-700sccm,携磷源小氮流量800-1000sccm,通工艺氧气流量750-850sccm,沉积时间6-8min。
4)后低温推进氧化:推进压力100-120mbar,温度720-790℃,通工艺大氮流量1200-1400sccm,通工艺氧流量600-800sccm,时间5-7min。
正面激光工艺。
最终经激光加工后,单个激光光斑长度为120μm,光斑间距20μm,具体的激光工艺如下:激光功率30-34W,激光调制频率200-240kHz,激光头打标速度25000-25500mm/min。
碱抛工艺。
碱抛工艺碱抛槽添加剂体积浓度2.6-2.9%,前后减重控制在0.13-0.24g。
Claims (2)
1.一种新型碱抛选择性发射极制程工艺,其特征在于:碱抛选择性发射极整体的工艺流程采用制绒—扩散—正面激光—碱抛—氧化—正面镀膜—背面镀膜—背面开膜—印刷,在扩散工艺中采用低浓度磷源沉积、高温推进PN结、高浓度表面磷源沉积、后低温推进氧化,正面激光工艺中,单个激光光斑长度为120μm,光斑间距20μm,激光功率30-34W,激光调制频率200-240kHz,激光头打标速度25000-25500mm/min,碱抛工艺中,前后减重控制在0.13-0.24g。
2.根据权利要求1所述的一种新型碱抛选择性发射极制程工艺,其特征在于:扩散工艺的详细过程为
步骤一、低浓度磷源沉积,沉积压力100-120mbar,沉积温度780-820℃,通大氮流量1200-1400sccm,携磷源小氮流量400-600sccm,通氧气流量350-450sccm,沉积时间17-19min;
步骤二、高温推进PN结,推进压力100-120mbar,温度845-865℃,通大氮流量1500-1900sccm,时间20-25min;
步骤三、高浓度表面磷源沉积,沉积压力100-120mbar,温度810-820度℃,通工艺大氮流量500-700sccm,携磷源小氮流量800-1000sccm,通工艺氧气流量750-850sccm,沉积时间6-8min;
步骤四、后低温推进氧化:推进压力100-120mbar,温度720-790℃,通大氮流量1200-1400sccm,通氧流量600-800sccm,时间5-7min。
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