CN110473864A - Led装置和使用led装置的led灯 - Google Patents
Led装置和使用led装置的led灯 Download PDFInfo
- Publication number
- CN110473864A CN110473864A CN201910039439.8A CN201910039439A CN110473864A CN 110473864 A CN110473864 A CN 110473864A CN 201910039439 A CN201910039439 A CN 201910039439A CN 110473864 A CN110473864 A CN 110473864A
- Authority
- CN
- China
- Prior art keywords
- light
- emitting diode
- transparent substrate
- led
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 239000010410 layer Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 22
- 230000005540 biological transmission Effects 0.000 claims description 15
- 238000005452 bending Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 239000011777 magnesium Substances 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- 239000011135 tin Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- PGTXKIZLOWULDJ-UHFFFAOYSA-N [Mg].[Zn] Chemical compound [Mg].[Zn] PGTXKIZLOWULDJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001548 drop coating Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910010092 LiAlO2 Inorganic materials 0.000 description 1
- 229910010936 LiGaO2 Inorganic materials 0.000 description 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011222 crystalline ceramic Substances 0.000 description 1
- 229910002106 crystalline ceramic Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 208000021760 high fever Diseases 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S4/00—Lighting devices or systems using a string or strip of light sources
- F21S4/20—Lighting devices or systems using a string or strip of light sources with light sources held by or within elongate supports
- F21S4/28—Lighting devices or systems using a string or strip of light sources with light sources held by or within elongate supports rigid, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/235—Details of bases or caps, i.e. the parts that connect the light source to a fitting; Arrangement of components within bases or caps
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/238—Arrangement or mounting of circuit elements integrated in the light source
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
- F21Y2105/14—Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array
- F21Y2105/16—Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array square or rectangular, e.g. for light panels
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2107/00—Light sources with three-dimensionally disposed light-generating elements
- F21Y2107/30—Light sources with three-dimensionally disposed light-generating elements on the outer surface of cylindrical surfaces, e.g. rod-shaped supports having a circular or a polygonal cross section
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2107/00—Light sources with three-dimensionally disposed light-generating elements
- F21Y2107/70—Light sources with three-dimensionally disposed light-generating elements on flexible or deformable supports or substrates, e.g. for changing the light source into a desired form
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
本申请提供一种发光二极管(LED)装置和一种LED灯。LED装置包括:透明基板,其具有第一表面和与所述第一表面相对的第二表面;LED阵列,其设置在所述透明基板的所述第一表面和所述第二表面中的至少一个上,并且包括彼此电连接的多个LED芯片;控制器,其设置在所述第一表面和所述第二表面中的至少一个上,并且电连接到所述LED阵列以控制所述LED阵列;连接端子,其设置在所述透明基板的一端,并与所述LED阵列和所述控制器电连接;以及波长转换器,其覆盖所述透明基板的所述第一表面和所述第二表面以及所述LED阵列。
Description
相关申请的交叉引用
本申请要求于2018年5月9日向韩国知识产权局提交的韩国专利申请No.10-2018-0053146的优先权,其公开内容通过引用整体并入本文。
技术领域
与本发明构思的示例实施例一致的设备涉及发光二极管(LED)装置和使用该LED装置的LED灯。
背景技术
通常,白炽灯或荧光灯已经普遍用于室内和室外照明装置中。然而,存在这样的问题,即这种白炽灯或荧光灯由于其寿命相对较短,可能需要频繁地更换。
为了解决这样的问题,已开发出包括LED的照明设备,其具有诸如以下的特性:优异的可控性、相对高的响应速度、相对高的光转换效率、相对长的寿命、相对低的功耗水平以及相对高的亮度。换句话说,由于LED具有相对高的光转换效率,因此其功耗相对较低。另外,由于LED不通过加热发光,因此不需要预热时间,由此在打开和关闭LED时响应速度相对较高。
此外,与相关技术的白炽灯和荧光灯相比,LED更耐冲击、消耗更少的电力、其寿命是半永久性的并且可以产生各种颜色的照明效果。另外,由于LED使用相对小的光源,因此LED可以小型化,从而扩展了照明工业的应用领域。
这样,随着使用LED的照明工业的应用领域的扩展,对LED照明设备的各种需求已经增加。此外,除了仅仅是使用较低水平的电力提供与相关技术的照明设备相同量的光之外,对比相关技术的照明设备成本更低的照明设备的需求也已增加。
发明内容
本发明构思的各个方面提供了一种LED装置和使用该LED装置的LED灯,其可以以降低的制造成本制造。
根据示例实施例,提供了一种LED装置,其可包括:透明基板,其包括第一表面和与所述第一表面相对的第二表面;LED阵列,其设置在所述透明基板的所述第一表面和所述第二表面中的至少一个上,并且包括彼此电连接的多个LED芯片;控制器,其设置在所述第一表面和所述第二表面中的至少一个上,并且电连接到所述LED阵列以控制所述LED阵列;连接端子,其设置在所述透明基板的一端,并与所述LED阵列和所述控制器电连接;以及波长转换器,其覆盖所述透明基板的所述第一表面和所述第二表面以及所述LED阵列。
根据示例实施例,提供了一种LED灯,其可包括:具有内部空间的灯泡;和设置在所述内部空间中的至少一个LED装置,其中,所述至少一个LED装置包括:透明基板,其具有第一表面和与所述第一表面相对的第二表面;LED阵列,其设置在所述透明基板的所述第一表面和所述第二表面中的至少一个上,并且具有彼此电连接的多个LED芯片;控制器,其设置在所述第一表面和所述第二表面中的至少一个上,并且电连接到所述LED阵列以控制所述LED阵列;连接端子,其设置在所述透明基板的至少一端,并与所述LED阵列和所述控制器电连接,其中所述连接端子的一个区域被暴露到所述灯泡的外部;以及波长转换器,其覆盖所述透明基板的所述第一表面和所述第二表面以及所述LED阵列。
根据示例实施例,提供了一种LED灯,其可包括:至少一个LED装置;和密封LED装置的透光模具,其中,所述至少一个LED装置包括:透明基板,其具有第一表面和与所述第一表面相对的第二表面;LED阵列,其设置在所述透明基板的所述第一表面和所述第二表面中的至少一个上,并且包括彼此电连接的多个LED芯片;控制器,其设置在所述第一表面和所述第二表面中的至少一个上,并且电连接到所述LED阵列以控制所述LED阵列;连接端子,其设置在所述透明基板的至少一端,并与所述LED阵列和所述控制器电连接,其中所述连接端子的一个区域被暴露到所述模具的外部;以及波长转换器,其覆盖所述透明基板的所述第一表面和所述第二表面以及所述LED阵列。
附图说明
通过以下结合附图的详细描述,将更清楚地理解本发明构思的上述和其他方面、特征和优点,其中:
图1是根据示例实施例的LED灯的立体图;
图2是根据示例实施例的图1的移除了波长转换器的LED装置的立体图;
图3是根据示例实施例的图2的部分A的放大视图。
图4是根据示例实施例的图2的LED阵列和控制器的电路图;
图5A是根据示例实施例的沿图1的线I-I'截取的剖视图;
图5B、图5C和图5D是根据示例实施例的图5A的变型示例;
图6是根据示例实施例的沿图1的线II-II'截取的剖视图;
图7是根据示例实施例的图6的部分B的放大视图;
图8是根据示例实施例的图7的LED芯片的变型示例;
图9和图10是根据示例实施例的图1和图2的变型示例;以及图11至图13是根据示例实施例的图1的LED灯的变型示例。
具体实施方式
在下文中,将参照附图描述本发明构思的示例实施例。
图1是根据示例实施例的LED灯的立体图,图2是根据示例实施例的图1的移除了波长转换器的LED装置的立体图。
参照图1,根据示例实施例的LED灯10可以包括灯泡400和容纳并设置在灯泡400的内部空间410中的LED装置100。虽然已通过将LED装置100容纳在灯泡400的内部空间中的示例描述了示例实施例,但本发明构思不限于此,并且可以修改为通过利用透光树脂模制LED装置100来形成LED灯10。这将在另一示例实施例中描述。
灯泡400可以是由玻璃、硬质玻璃、石英玻璃或透光树脂制成的透明盖或磨砂盖。另外,灯泡400可以是乳白色的、无光泽的或彩色的盖。灯泡400的一端可以通过高温热处理密封以形成内部空间。因此,容纳在灯泡400的内部空间中的LED装置100可以屏蔽外部湿气。在密封之前,可以将诸如氦气或氧气的气体注入灯泡400的内部空间中。可以将诸如氦气或氧气的气体注入灯泡400的内部空间中然后密封。灯泡400可以设置为相关技术的照明装置的灯泡,例如A型、G型、R型、PAR型、T型、S型、蜡烛型、P型、PS型、BR型、ER型或BRL型的照明装置。在示例实施例中,以灯泡400是G9型灯泡的情况为例进行描述。
容纳在灯泡400的内部空间中的LED装置100包括具有彼此相对的第一表面S1和第二表面S2的透明基板110、设置在透明基板110上的LED阵列120、控制器130和连接端子300。
参照图2,透明基板110可以具有第一表面S1和与第一表面S1相对的第二表面S2,并且可以具有在一个方向上伸长的板形,换句话说,条形。透明基板110可以由例如玻璃、硬质玻璃、石英玻璃、透明陶瓷、蓝宝石、塑料等的透光材料制成。根据示例实施例,透明基板110可以是使用诸如聚酰亚胺树脂等的材料的柔性基板。因此,也可以将透明基板110弯曲成圆柱形或U形,使得其上安装有至少一个LED芯片的第一表面S1设置在外部。透明基板110的连接第一表面S1和第二表面S2的侧表面S3可以具有凹凸图案,以提高入射到透明基板110中的光的光提取效率。
包括至少一个LED芯片的LED阵列120和控制LED阵列120的控制器130可以设置在透明基板110的第一表面S1上。根据示例实施例,LED阵列120可以同时设置在第一表面S1和第二表面S2上。另外,LED阵列120可以设置在第一表面S1上,控制器130可以设置在第二表面S2上。另外,虽然图2示出了LED阵列120被设置为与透明基板110的设置有连接端子300的一端接触,但是本发明构思不限于此,并且控制器130可以设置成与透明基板110的设置有连接端子300的一端接触。
用于构成LED阵列120和控制器130的印刷电路图案121可以设置在透明基板110的第一表面S1和/或第二表面S2上。印刷电路图案121可以用作用于将LED阵列120的LED芯片和控制器130的半导体芯片安装在透明基板110上的布线。根据示例实施例,印刷电路图案121可以由透光电极形成,并且从安装在第一表面S1上的LED芯片发出的光透射通过印刷电路图案121以发射到透明基板110的第二表面S2。这种透光电极可以是透明导电氧化物层或氮化物层。例如,透光电极可以是选自以下材料中的至少一种:氧化铟锡(ITO)、锌掺杂的氧化铟锡(ZITO)、氧化锌铟(ZIO)、氧化镓铟(GIO)、氧化锌锡(ZTO)、氟掺杂的氧化锡(FTO)、铝掺杂的氧化锌(AZO)、镓掺杂的氧化锌(GZO)、In4Sn3O12和Zn(1-x)MgxO(氧化锌镁,0≤x≤1)。根据示例实施例,印刷电路图案121可以由诸如铜(Cu)、银(Ag)、镍(Ni)、铝(Al)、铑(Rh)、钯(Pd)、铱(Ir)、钌(Ru)、镁(Mg)、锌(Zn)、铂(Pt)、金(Au)等的材料制成。印刷电路图案121的一个区域可以用作连接件121a和连接件121b,用于连接用于施加电力的连接端子300,连接件121a和连接件121b可以设置在透明基板110的一端。
LED阵列120是安装LED芯片的区域,并且可以安装一个或多个LED芯片。根据示例实施例,多个LED芯片可以串联、并联或串并联地电连接和安装。在示例实施例中,将以安装多个LED芯片的情况为例进行描述。
参照图2,多个LED芯片可以沿透明基板110的纵向(图1中的D1的方向)设置在透明基板110上。然而,本发明构思不限于此,根据示例实施例,多个LED芯片可以沿透明基板110的宽度方向设置。
参照图7,多个LED芯片可以经由线560串联连接。然而,本发明构思不限于此,如上所述,多个LED芯片可以串联、并联或串并联地连接。LED芯片可以以板上芯片(COB)的形式直接安装在透明基板110上,而无需单独的封装。
参照图7,多个LED芯片可以分别包括发光结构520,发光结构520包括顺序地设置在透光衬底510上的第一导电半导体层520a、作为多量子阱结构的有源层520b和第二导电半导体层520c。
透光衬底510可以使用由诸如蓝宝石、SiC、MgAl2O4、MgO、LiAlO2、LiGaO2、GaN等的材料制成的半导体生长衬底。在这种情况下,蓝宝石是具有六方菱形(Hexa-Rhombo R3c)对称性并且在c轴和a轴方向上的晶格常数分别为13.00埃和4.76埃的晶体,并且可以具有C(0001)面、A(11-20)面、R(1-102)面等。在这种情况下,由于氮化物薄膜在C面上可以相对容易地生长、在相对高的温度下稳定,所以C面通常用作氮化物生长衬底。
透光衬底510可以具有彼此相对的表面,并且可以在其相对的表面中的至少一个上形成凹凸结构。可以通过刻蚀透光衬底510的一部分或通过形成与透光衬底510不同的异质材料层来提供凹凸结构。
第一导电半导体层520a可以被设为满足n型AlxInyGa1-x-yN(0≤x<1,0≤y<1,0≤x+y<1)的氮化物半导体,而n型杂质可以设为硅(Si)。第二导电半导体层520c可以被设为满足p型AlxInyGa1-x-yN(0≤x<1,0≤y<1,0≤x+y<1)的氮化物半导体层,而p型杂质可以设为镁(Mg)。例如,第一导电半导体层520a可以包括n型GaN,第二导电半导体层可以包括p型GaN。另外,第二导电半导体层520c可以实现为具有单层结构。然而,根据需要,第二导电半导体层520c可以具有包括不同组分的多层结构。
有源层520b可以具有MQW结构,其中量子阱层和量子势垒层交替地堆叠。例如,量子阱层和量子势垒层可以被设为具有不同组份的AlxInyGa1-x-yN(0≤x≤1,0≤y≤1,0≤x+y≤1)。在特定示例中,量子阱层可以被设为InxGa1-xN(0<x≤1),而量子势垒层可以被设为GaN或AlGaN。
LED芯片可以包括设置在第一导电半导体层520a上的第一电极540、顺序地设置在第二导电半导体层520c上的欧姆接触层530和第二电极550。
第一电极540和欧姆接触层530可以包括诸如银(Ag)、镍(Ni)、铝(Al)、铑(Rh)、钯(Pd)、铱(Ir)、钌(Ru)、镁(Mg)、锌(Zn)、铂(Pt)、金(Au)等的材料,并且可以采用单层结构或多层结构,但不限于此。第二电极550可以设为接触电极层并且可以包括铬(Cr)/金(Au)。
根据芯片结构,可以以各种方式实现欧姆接触层530。例如,在LED芯片具有倒装芯片结构的情况下,欧姆接触层530可以包括Ag。在具有以与倒装芯片结构相反的方式设置的结构的情况下,欧姆接触层530可以包括透光电极。透光电极可以设为透明导电氧化物层或氮化物层。例如,透光电极可以被设为选自以下材料中的至少一种:氧化铟锡(ITO)、锌掺杂的氧化铟锡(ZITO)、氧化锌铟(ZIO)、氧化镓铟(GIO)、氧化锌锡(ZTO)、氟掺杂的氧化锡(FTO)、铝掺杂的氧化锌(AZO)、镓掺杂的氧化锌(GZO)、In4Sn3O12和Zn(1-x)MgxO(氧化锌镁,0≤x≤1))。根据需要,欧姆接触层530可以包括石墨烯。第二电极550可以包括Au、Sn或Au/Sn。
LED芯片可以通过粘合层570附接到透明基板110。粘合层570可以由具有相对高热导率的材料形成,使得LED芯片产生的热量可以快速传输到透明基板110。具体地,可以在粘合层570上使用透明硅酮粘合剂、包含导热金属填料的粘合剂等,也可以使用Ag膏。因此,由于从LED芯片发射的光被传输的同时LED芯片的热量被快速消散,所以LED芯片的可靠性可增加。可以使用氧化铝填料作为金属填料,但是本发明构思不限于此。
另外,如图8所示,LED芯片可以以倒装芯片的形式(其中第一电极540和第二电极550附接到焊料580)安装在透明基板110的印刷电路图案1121a和1121b上。
参照图2,用于向LED阵列120和控制器130供电的第一连接端子310和第二连接端子320可以连接到印刷电路图案121的连接件121a和121b。
控制器130可以包括用于控制LED阵列120的各种电路。例如,控制器130可以包括交流到直流(AC/DC)整流器电路,用于向LED阵列120提供DC电力。此外,控制器130还可以包括各种控制电路,例如使用雷达(RADAR)装置感测用户的移动的运动感测电路、用于识别用户的语音以将语音转换为电信号的语音识别电路、光学传感器电路,等等。在示例实施例中,将以控制器130由包括四个二极管131和一个恒流二极管132的AC/DC整流器电路形成的情况为例进行描述。
由于控制器130可以与LED阵列120一起设置在单个透明基板110上,因此与LED阵列120和控制器130设置在分离的基板上的情况相比,可以降低制造成本。此外,由于控制器130使用单个透明基板110,因此与LED阵列120和控制器130设置在分离的基板上的情况相比,LED阵列120可以广泛地布置在灯泡400的有限的内部空间中。因此,可以进一步增加LED灯10的光量。
控制器130可以包括构成AC/DC整流器电路、运动感测电路或语音识别电路的半导体芯片。反射层134可以设置在半导体芯片的表面上,以防止光在半导体芯片的表面上被吸收。例如,图3示出了将反射层134设置在恒流二极管132(即,控制器130中包括的半导体芯片中的一个)的表面上。可以通过将包含诸如TiO2的反射材料的树脂形成为片状并将该树脂附接到半导体芯片上来形成反射层134,或者通过在半导体芯片的表面上施加其中分散有反射材料的树脂来形成反射层134。
图4是LED装置100的电路图,根据图4,LED阵列120包括彼此串联连接的54个LED芯片LED1至LED54,并且控制器130由包括四个二极管131和一个恒流二极管132的AD/DC整流器电路形成。
参照图1,波长转换器200可以包括分别覆盖透明基板110的第一表面S1和第二表面S2的第一波长转换器210和第二波长转换器220。波长转换器200可以转换从LED芯片发射的光的波长。波长转换器200可以被限制地设置在LED阵列120上,而不设置在控制器130上。因此,防止波长转换器200不必要地设置在控制器130上,从而提高控制器130的热效率并防止不必要地处理昂贵的波长转换器200,因而可以降低制造成本。另外,通过将波长转换器200限制性地仅设置在LED阵列120上而不设置在控制器130上,可以防止控制器130接收的信号受到干扰。
波长转换器200可以通过在半固化树脂材料中混合磷光体、量子点等来形成为覆盖透明基板110和LED芯片的表面。波长转换器200可以是B级复合材料,其中磷光体与由树脂、固化剂、固化催化剂等制成的聚合物粘合剂混合并且是半固化的。
作为磷光体,可以使用石榴石基磷光体(YAG、TAG、LuAG)、硅酸盐基磷光体、氮化物基磷光体、硫化物基磷光体、氧化物基磷光体等,磷光体可包括单一种类或以预定比率混合的多个种类。
波长转换器200中使用的树脂可以是环氧基树脂或硅树脂、无机聚合物、能够满足高粘合性、高透光率、高耐热性、高折射率、耐湿性的要求的树脂,等等。为了确保高粘合性,作为用于改善粘合性的添加剂,例如,可以使用硅烷基材料。
波长转换器200可以以各种方式形成。例如,含有磷光体的树脂可以以片的形式形成、并且被切割并被附接,或者含有磷光体的树脂可以通过喷嘴排出在安装有LED芯片的透明基板110上以形成第一波长转换器210,并且含有磷光体的树脂可以再次通过喷嘴排出以形成第二波长转换器220。
图5A示出了分别设置在透明基板110的两侧的片状第一波长转换器210和第二波长转换器220。
图5B至图5D是波长转换器200的各种变型示例。省略相同的配置以避免重复说明。
图5B是通过滴涂(dispensing)形成波长转换器200a以使得波长转换器200a不仅覆盖透明基板110的两个表面还覆盖其侧表面的示例。
图5C是这样的示例:通过分别在透明基板110的两个表面上形成透明树脂层210b和220b以及通过滴涂形成波长转换器200b以覆盖透明树脂层210b和220b,将波长转换器200b与LED芯片间隔开。
图5D是这样的示例:LED芯片分别安装在透明基板110a的两个表面上,形成过孔121e以穿透透明基板110a的两个表面并且分别设置在透明基板110a的两个表面上的印刷电路图案121c和121d彼此电连接。
图9和图10是图1和图2的变型示例,与上述示例实施例不同,控制器2130形成为设置为与透明基板2110的设置有连接端子2300的一端接触。
LED灯20包括LED装置2100和灯泡2400,连接端子2300设置在LED装置2100的一端,连接端子2300包括第一连接端子2310和第二连接端子2320,与上述示例实施例相同,因此将省略其详细描述。片状的第一波长转换器2210和第二波长转换器2220分别设置在透明基板2110的两侧。
另外,LED装置2100包括透明基板2110,透明基板2110包括第一表面S4、第二表面S5和侧表面S6,LED阵列2120和控制器2130设置在第一表面S4上,LED阵列2120包括多个LED芯片,并且多个LED芯片沿透明基板的纵向方向(图9的D2方向)设置,与上述示例性实施例相同,因此将省略详细描述。
用于构成LED阵列2120和控制器2130的印刷电路图案2121设置在透明基板110的第一表面S4上,连接件2121a和2121b设置在印刷电路图案2121的用于与连接端子2300连接的一端,并且控制器2130是包括四个二极管2131和一个恒流二极管2132的AC/DC整流器电路,也与上述示例性实施例相同,因此将省略详细描述。
图11至图13是图1的LED灯10的变型示例。
图11的LED灯30与上述示例实施例中的LED灯10的不同之处在于采用柔性透明基板3110并且透明基板3110沿着围绕设置在LED灯30的纵向方向上的中心轴D3的方向D4弯曲。另外,与示例性实施例不同,LED装置3100不是通过灯泡而是通过透光模具3400密封。
因此,透明基板3110可以弯曲成圆柱形状以便设置,波长转换器3200的第一波长转换器3210可以设置在弯曲成圆柱形状的透明基板3110的外表面上,第二波长转换器3220可以设置在弯曲成圆柱形状的透明基板3110的内表面上。与将透明基板设置为板状的示例实施例相比,通过将透明基板3110设置为圆柱形状,可以扩展导光角度。另外,根据示例实施例,LED灯30的附件可以设置在由透明基板3110形成的圆柱的内部空间3500中。
通过在LED装置3100的表面上模制透光树脂来形成透光模具3400。通过施加透光树脂并在透明基板3110弯曲的状态下使其固化,透光模具3400可以在透明基板3110弯曲的状态下被固定。
由于连接端子3300包括第一连接端子3310和第二连接端子3320并且设置在透明基板3110的一端与上述示例实施例相同,因此将省略其详细描述。
图12与图11的变型示例的LED灯30的不同之处在于,柔性透明基板4110附接到圆柱形透光柱4500,波长转换器4200的第二波长转换器4220设置在透光柱4500的上部上。由于透明基板4110附接到透光柱4500以形成弯曲状态的模具4400,因此制造比上述变型示例更容易。LED装置4100由透光模具4400密封。波长转换器4200的第一波长转换器4210可以设置在弯曲成圆柱形状的透明基板4110的外表面上。
与上述变型示例相同,透明基板4110沿着围绕设置在LED灯40的纵向方向上的中心轴D5的方向D6弯曲。另外,由于连接端子4300包括第一连接端子4310和第二连接端子4320并且设置在透明基板4110的一端与上述示例实施例相同,因此将省略其详细描述。
图13与上述示例性实施例的LED灯10的不同之处在于,柔性透明基板5110弯曲成U型,并且第一连接端子5310和第二连接端子5320分别设置在透明基板5110的两端5110a和5110b。由于连接端子5300包括第一连接端子5310和第二连接端子5320与上述示例实施例相同,因此将省略其详细描述。LED装置5100由透光模具5400密封。波长转换器5200的第一波长转换器5210可以设置在弯曲成U型的透明基板5110的外表面上,并且第二波长转换器5220可以设置在弯曲成U型的透明基板5110的内表面上。
如上所述,根据示例实施例,LED装置和使用该LED装置的LED灯可以降低制造成本。
虽然已经在上文示出和描述了示例实施例,但是对于本领域技术人员来说显而易见的是,在不脱离由所附权利要求限定的本发明构思的范围的情况下,可以进行变型和变化。
Claims (20)
1.一种发光二极管装置,包括:
透明基板,其包括第一表面和与所述第一表面相对的第二表面;
发光二极管阵列,其设置在所述透明基板的所述第一表面和所述第二表面中的至少一个上,并且包括彼此电连接的多个发光二极管芯片;
控制器,其设置在所述第一表面和所述第二表面中的至少一个上,并且电连接到所述发光二极管阵列以控制所述发光二极管阵列;
连接端子,其设置在所述透明基板的一端,并与所述发光二极管阵列和所述控制器电连接;以及
波长转换器,其覆盖所述透明基板的所述第一表面和所述第二表面以及所述发光二极管阵列。
2.根据权利要求1所述的发光二极管装置,其中,所述波长转换器被设置为仅覆盖所述发光二极管阵列和所述控制器中的所述发光二极管阵列。
3.根据权利要求1所述的发光二极管装置,其中,所述多个发光二极管芯片通过由透明导电材料形成的印刷电路图案电连接。
4.根据权利要求1所述的发光二极管装置,其中,所述控制器包括构成交流到直流(AC/DC)整流器电路的半导体芯片。
5.根据权利要求4所述的发光二极管装置,其中,所述半导体芯片的表面设置有反射层。
6.根据权利要求4所述的发光二极管装置,其中,所述半导体芯片通过透光粘合层附接到所述透明基板。
7.根据权利要求1所述的发光二极管装置,其中,所述发光二极管阵列设置在所述透明基板的所述第一表面和所述第二表面中的每一个上。
8.根据权利要求1所述的发光二极管装置,其中,所述透明基板的侧表面包括凹凸图案。
9.根据权利要求1所述的发光二极管装置,其中,所述透明基板是柔性基板。
10.根据权利要求9所述的发光二极管装置,其中,所述透明基板被弯曲,使得所述第一表面设置在外部。
11.根据权利要求10所述的发光二极管装置,其中,所述透明基板基于中心轴弯曲,其中所述第一表面连接所述透明基板的所述一端和另一端。
12.根据权利要求11所述的发光二极管装置,还包括设置在所述中心轴上的透光柱,并且附接所述透明基板以围绕所述透光柱。
13.根据权利要求1所述的发光二极管装置,其中,所述多个发光二极管芯片串联电连接。
14.根据权利要求1所述的发光二极管装置,其中,所述控制器设置在所述透明基板的另一端。
15.一种发光二极管灯,包括:
具有内部空间的灯泡;和
设置在所述内部空间中的至少一个发光二极管装置,
其中,所述至少一个发光二极管装置包括:
透明基板,其包括第一表面和与所述第一表面相对的第二表面;
发光二极管阵列,其设置在所述透明基板的所述第一表面和所述第二表面中的至少一个上,并且包括彼此电连接的多个发光二极管芯片;
控制器,其设置在所述第一表面和所述第二表面中的至少一个上,并且电连接到所述发光二极管阵列以控制所述发光二极管阵列;
连接端子,其设置在所述透明基板的至少一端,并与所述发光二极管阵列和所述控制器电连接,其中,所述连接端子的一个区域被暴露到所述灯泡的外部;以及
波长转换器,其覆盖所述透明基板的所述第一表面和所述第二表面以及所述发光二极管阵列。
16.根据权利要求15所述的发光二极管灯,其中,所述内部空间填充有氦气和氧气中的至少一种。
17.根据权利要求15所述的发光二极管灯,其中,所述波长转换器是片状的。
18.根据权利要求15所述的发光二极管灯,其中,所述波长转换器延伸为覆盖设置在所述透明基板的所述第一表面和所述第二表面之间的侧表面。
19.根据权利要求15所述的发光二极管灯,其中,所述灯泡的内侧是磨砂的。
20.一种发光二极管灯,包括:
至少一个发光二极管装置;和
密封所述至少一个发光二极管装置的透光模具,
其中,所述至少一个发光二极管装置包括:
透明基板,其包括第一表面和与所述第一表面相对的第二表面;
发光二极管阵列,其设置在所述透明基板的所述第一表面和所述第二表面中的至少一个上,并且包括彼此电连接的多个发光二极管芯片;
控制器,其设置在所述第一表面和所述第二表面中的至少一个上,并且电连接到所述发光二极管阵列以控制所述发光二极管阵列;
连接端子,其设置在所述透明基板的至少一端,并与所述发光二极管阵列和所述控制器电连接,其中,所述连接端子的一个区域被暴露到所述透光模具的外部;以及
波长转换器,其覆盖所述透明基板的所述第一表面和所述第二表面以及所述发光二极管阵列。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2018-0053146 | 2018-05-09 | ||
KR1020180053146A KR102550415B1 (ko) | 2018-05-09 | 2018-05-09 | Led 장치 및 이를 이용한 led 램프 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110473864A true CN110473864A (zh) | 2019-11-19 |
Family
ID=68464517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910039439.8A Pending CN110473864A (zh) | 2018-05-09 | 2019-01-16 | Led装置和使用led装置的led灯 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10711958B2 (zh) |
KR (1) | KR102550415B1 (zh) |
CN (1) | CN110473864A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022036681A1 (zh) * | 2020-08-21 | 2022-02-24 | 柯银湖 | Led发光源装置及其制造方法 |
CN114415449A (zh) * | 2022-01-24 | 2022-04-29 | 深圳颂威科技有限公司 | 灯板和聚光灯 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA3058851A1 (en) * | 2018-12-24 | 2020-06-24 | Axis Lighting Inc. | Outdoor light fixtures |
US11592166B2 (en) * | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001202803A (ja) * | 2000-01-20 | 2001-07-27 | Matsushita Electric Ind Co Ltd | 発光ダイオードを用いた信号表示灯 |
JP2008300645A (ja) * | 2007-05-31 | 2008-12-11 | Sharp Corp | 窒化物系半導体ledチップの製造方法 |
CN102226995A (zh) * | 2011-05-25 | 2011-10-26 | 映瑞光电科技(上海)有限公司 | 一种led封装结构及其制备方法 |
CN102338319A (zh) * | 2010-07-26 | 2012-02-01 | 富士迈半导体精密工业(上海)有限公司 | 交流发光二极管照明装置 |
CN102913787A (zh) * | 2012-09-26 | 2013-02-06 | 厦门华联电子有限公司 | 一种新型的led光源及采用此光源制造的灯泡 |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1143394C (zh) | 1996-08-27 | 2004-03-24 | 精工爱普生株式会社 | 剥离方法、溥膜器件的转移方法和薄膜器件 |
USRE38466E1 (en) | 1996-11-12 | 2004-03-16 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
US7208725B2 (en) | 1998-11-25 | 2007-04-24 | Rohm And Haas Electronic Materials Llc | Optoelectronic component with encapsulant |
JP2001127278A (ja) | 1999-10-25 | 2001-05-11 | Rohm Co Ltd | 複合半導体装置 |
JP3906654B2 (ja) | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 半導体発光素子及び半導体発光装置 |
CN1241272C (zh) | 2001-08-22 | 2006-02-08 | 索尼公司 | 氮化物半导体器件及其制造方法 |
US7048423B2 (en) * | 2001-09-28 | 2006-05-23 | Visteon Global Technologies, Inc. | Integrated light and accessory assembly |
JP2003218034A (ja) | 2002-01-17 | 2003-07-31 | Sony Corp | 選択成長方法、半導体発光素子及びその製造方法 |
JP3815335B2 (ja) | 2002-01-18 | 2006-08-30 | ソニー株式会社 | 半導体発光素子及びその製造方法 |
KR100499129B1 (ko) | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | 발광 다이오드 및 그 제조방법 |
US7002182B2 (en) | 2002-09-06 | 2006-02-21 | Sony Corporation | Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit |
FR2850191B1 (fr) * | 2003-01-21 | 2006-04-28 | Atmel Grenoble Sa | Procede et dispositif de securisation par reconnaissance de personne |
KR100714639B1 (ko) | 2003-10-21 | 2007-05-07 | 삼성전기주식회사 | 발광 소자 |
KR20080099352A (ko) * | 2003-12-11 | 2008-11-12 | 필립스 솔리드-스테이트 라이팅 솔루션스, 인크. | 조명 소자를 위한 열 관리 방법 및 조명 고정구 |
KR100506740B1 (ko) | 2003-12-23 | 2005-08-08 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
KR100664985B1 (ko) | 2004-10-26 | 2007-01-09 | 삼성전기주식회사 | 질화물계 반도체 소자 |
WO2006091538A2 (en) * | 2005-02-22 | 2006-08-31 | Kevin Doyle | An led pool or spa light having a unitary lens body |
KR100665222B1 (ko) | 2005-07-26 | 2007-01-09 | 삼성전기주식회사 | 확산재료를 이용한 엘이디 패키지 및 그 제조 방법 |
KR100661614B1 (ko) | 2005-10-07 | 2006-12-26 | 삼성전기주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
KR100968843B1 (ko) | 2005-12-16 | 2010-07-09 | 서울옵토디바이스주식회사 | 다수의 발광셀이 어레이된 발광소자 |
KR100723247B1 (ko) | 2006-01-10 | 2007-05-29 | 삼성전기주식회사 | 칩코팅형 led 패키지 및 그 제조방법 |
KR100735325B1 (ko) | 2006-04-17 | 2007-07-04 | 삼성전기주식회사 | 발광다이오드 패키지 및 그 제조방법 |
KR100930171B1 (ko) | 2006-12-05 | 2009-12-07 | 삼성전기주식회사 | 백색 발광장치 및 이를 이용한 백색 광원 모듈 |
KR100855065B1 (ko) | 2007-04-24 | 2008-08-29 | 삼성전기주식회사 | 발광 다이오드 패키지 |
KR100982980B1 (ko) | 2007-05-15 | 2010-09-17 | 삼성엘이디 주식회사 | 면 광원 장치 및 이를 구비하는 lcd 백라이트 유닛 |
KR101164026B1 (ko) | 2007-07-12 | 2012-07-18 | 삼성전자주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
KR100891761B1 (ko) | 2007-10-19 | 2009-04-07 | 삼성전기주식회사 | 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지 |
KR101423457B1 (ko) * | 2007-12-18 | 2014-07-28 | 서울반도체 주식회사 | 방열 구조를 갖는 면광원용 led 램프 |
KR101463039B1 (ko) | 2008-02-15 | 2014-11-19 | 삼성디스플레이 주식회사 | 백라이트 유닛 및 이를 구비하는 표시 장치 |
KR101332794B1 (ko) | 2008-08-05 | 2013-11-25 | 삼성전자주식회사 | 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법 |
KR20100030470A (ko) | 2008-09-10 | 2010-03-18 | 삼성전자주식회사 | 다양한 색 온도의 백색광을 제공할 수 있는 발광 장치 및 발광 시스템 |
KR101530876B1 (ko) | 2008-09-16 | 2015-06-23 | 삼성전자 주식회사 | 발광량이 증가된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법 |
US8008683B2 (en) | 2008-10-22 | 2011-08-30 | Samsung Led Co., Ltd. | Semiconductor light emitting device |
US20110149201A1 (en) * | 2009-10-16 | 2011-06-23 | Karlton David Powell | Lightguide illuminator embedded display |
KR20120112936A (ko) * | 2011-04-04 | 2012-10-12 | 주식회사 허니리츠 | 양면 발광 엘이디 모듈을 갖는 램프 패키지 |
JP2012244018A (ja) | 2011-05-20 | 2012-12-10 | Toshiba Lighting & Technology Corp | 発光モジュール及び照明器具 |
JP5935643B2 (ja) | 2012-10-10 | 2016-06-15 | サンケン電気株式会社 | 半導体発光装置 |
KR101412749B1 (ko) * | 2013-02-22 | 2014-07-01 | 주식회사 지앤씨 | 이물질 차단기능을 갖는 발광 다이오드 조명장치 |
JP2015159020A (ja) | 2014-02-24 | 2015-09-03 | アイリスオーヤマ株式会社 | Led照明装置 |
US20160154170A1 (en) * | 2014-06-12 | 2016-06-02 | Nthdegree Technologies Worldwide Inc. | Ultra-thin display using thin flexible led light sheet |
US9826599B2 (en) | 2015-12-28 | 2017-11-21 | Amazon Technologies, Inc. | Voice-controlled light switches |
KR20170119513A (ko) * | 2016-04-19 | 2017-10-27 | 주식회사 루멘스 | 발광소자 및 이를 포함하는 발광벌브 |
KR20170123153A (ko) * | 2016-04-28 | 2017-11-07 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 포함하는 조명 장치 |
US10211151B2 (en) * | 2016-06-30 | 2019-02-19 | International Business Machines Corporation | Enhanced self-alignment of vias for asemiconductor device |
US10269716B2 (en) * | 2016-07-01 | 2019-04-23 | Intel Corporation | Device, system and method to interconnect circuit components on a transparent substrate |
US9942960B2 (en) * | 2016-07-13 | 2018-04-10 | HealthCo LLC | Ambient flame style flicker lighting system and methods |
-
2018
- 2018-05-09 KR KR1020180053146A patent/KR102550415B1/ko active IP Right Grant
- 2018-10-16 US US16/161,948 patent/US10711958B2/en active Active
-
2019
- 2019-01-16 CN CN201910039439.8A patent/CN110473864A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001202803A (ja) * | 2000-01-20 | 2001-07-27 | Matsushita Electric Ind Co Ltd | 発光ダイオードを用いた信号表示灯 |
JP2008300645A (ja) * | 2007-05-31 | 2008-12-11 | Sharp Corp | 窒化物系半導体ledチップの製造方法 |
CN102338319A (zh) * | 2010-07-26 | 2012-02-01 | 富士迈半导体精密工业(上海)有限公司 | 交流发光二极管照明装置 |
CN102226995A (zh) * | 2011-05-25 | 2011-10-26 | 映瑞光电科技(上海)有限公司 | 一种led封装结构及其制备方法 |
CN102913787A (zh) * | 2012-09-26 | 2013-02-06 | 厦门华联电子有限公司 | 一种新型的led光源及采用此光源制造的灯泡 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022036681A1 (zh) * | 2020-08-21 | 2022-02-24 | 柯银湖 | Led发光源装置及其制造方法 |
EP3978797A4 (en) * | 2020-08-21 | 2022-06-08 | Ko, Yin-Hu | LED LIGHT EMITTING SOURCE DEVICE AND METHOD FOR MAKING IT |
CN114415449A (zh) * | 2022-01-24 | 2022-04-29 | 深圳颂威科技有限公司 | 灯板和聚光灯 |
CN114415449B (zh) * | 2022-01-24 | 2024-05-24 | 深圳颂威科技有限公司 | 灯板和聚光灯 |
Also Published As
Publication number | Publication date |
---|---|
KR20190128870A (ko) | 2019-11-19 |
US10711958B2 (en) | 2020-07-14 |
US20190346094A1 (en) | 2019-11-14 |
KR102550415B1 (ko) | 2023-07-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10347804B2 (en) | Light source package and display device including the same | |
EP2362455B1 (en) | Light emitting device | |
CN110473864A (zh) | Led装置和使用led装置的led灯 | |
CN102800781B (zh) | 半导体发光装置及其制造方法 | |
US9478718B2 (en) | Light emitting device | |
EP2367211B1 (en) | Light emitting diode and light emitting diode package | |
US9472740B2 (en) | Light emitting diode package and lighting device using the same | |
EP2466653B1 (en) | Light emitting device, light emitting device package and lighting system | |
CN108376680B (zh) | Led器件和包括led器件的led灯 | |
TWI489655B (zh) | 發光裝置封裝件及照明系統 | |
CN104953000B (zh) | 发光二极管及发光装置 | |
WO2012177316A1 (en) | Led structure with enhanced mirror reflectivity | |
CN104465940B (zh) | 发光器件封装件 | |
CN102820404A (zh) | 发光二极管封装 | |
KR20160098580A (ko) | 광학 소자 및 이를 포함하는 광원 모듈 | |
CN102969415A (zh) | 发光器件 | |
US9897298B2 (en) | Light emitting module and light unit having the same | |
KR20130140417A (ko) | 발광 소자 및 그 제조방법 | |
EP2453487B1 (en) | Light emitting device | |
KR20160143984A (ko) | 광학 소자 및 이를 포함하는 광원 모듈 | |
KR101907618B1 (ko) | 발광소자 | |
KR102019497B1 (ko) | 발광소자 | |
KR102065375B1 (ko) | 발광소자 | |
KR20120044037A (ko) | 발광소자 | |
KR20140097604A (ko) | 발광 소자 및 그를 포함하는 발광소자 패키지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |