CN110459518B - Surface-mounted diode structure - Google Patents
Surface-mounted diode structure Download PDFInfo
- Publication number
- CN110459518B CN110459518B CN201910774900.4A CN201910774900A CN110459518B CN 110459518 B CN110459518 B CN 110459518B CN 201910774900 A CN201910774900 A CN 201910774900A CN 110459518 B CN110459518 B CN 110459518B
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- Prior art keywords
- chip
- heat conduction
- diode structure
- hole
- protective shell
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- 230000001681 protective effect Effects 0.000 claims abstract description 17
- 239000003822 epoxy resin Substances 0.000 claims abstract description 11
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 11
- 238000003466 welding Methods 0.000 claims abstract description 11
- 230000000149 penetrating effect Effects 0.000 claims abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 239000011888 foil Substances 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 7
- 239000005030 aluminium foil Substances 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention provides a chip diode structure which comprises a chip, an epoxy resin layer wrapping the chip and a protective shell sleeved outside the epoxy resin layer, wherein pins are arranged at two ends of the chip, each pin comprises a contact part electrically connected with the chip, a limiting part connected to one end of the contact part and a welding part connected to one end of the limiting part, mounting plates are fixed on two end faces of the protective shell, a through hole for the welding part to pass through is formed in the middle of each mounting plate, a limiting groove for the limiting part to be accommodated is formed in the middle of each end face of the protective shell, a mounting hole penetrating through the end face of the chip is connected to the bottom of each limiting groove, and the contact part is located in the mounting hole. According to the chip diode structure, the pins are designed into an assembled structure, so that the pins are convenient to replace, and the chip diode structure is simple in structure and convenient to replace.
Description
Technical Field
The invention relates to the technical field of diodes, in particular to a surface mount diode structure.
Background
The diode is also called a crystal diode, and is called a diode for short. Among electronic components, a device having two electrodes allows current to flow only in a single direction, and many applications use the rectifying function thereof. The most common function of a diode is to allow current to pass in only one direction, known as forward bias, and to block in the reverse direction, known as reverse bias. Thus, the diode can be thought of as an electronic version of the check valve. A part of the semiconductor silicon or germanium is doped with a trace of trivalent element boron to form a P type semiconductor, and the other part of the semiconductor silicon or germanium is doped with a trace of pentavalent element phosphorus to form an N type semiconductor. A PN junction is formed at the junction of the P-type and N-type semiconductors. A PN junction is a diode, a lead wire of a P area is called an anode, and a lead wire of an N area is called a cathode.
In the diode in the prior art, a chip and part of pins are generally wrapped by thicker epoxy resin, and because part of the pins are easily damaged in the welding process or the using process, the whole diode can only be scrapped after the part of the pins is damaged, and the diode has a larger defect.
Disclosure of Invention
In order to solve the above problems, the invention provides a chip diode structure, which has a pin designed into an assembled structure, is convenient for replacing the pin, and has a simple structure and convenient replacement.
In order to achieve the purpose, the invention is solved by the following technical scheme:
the utility model provides a paster diode structure, is including the chip, wrapping up the epoxy layer of chip and cover are established the protective housing in the epoxy layer outside, the chip both ends all are equipped with the pin, the pin include with the contact site that the chip electricity is connected, connect spacing portion and the connection of contact site one end are in the weld part of spacing portion one end, protective housing both ends face all is fixed with the mounting panel, the mounting panel middle part is equipped with the confession the through-hole that the weld part passed, a confession has been seted up at protective housing both ends face middle part the spacing groove of spacing portion holding, spacing tank bottom is connected with and link up the mounting hole of chip terminal surface, the contact site is in the mounting hole.
Specifically, the mounting plate is fixedly connected with the protective shell through a screw.
Specifically, the screw inboard still is equipped with a heat conduction hole, the heat conduction hole is located the epoxy resin in situ, still be equipped with heat conduction aluminum plate in the epoxy resin in situ, heat conduction aluminum plate's edge with the heat conduction jogged joint.
Specifically, the through hole with the handing-over department of welding part still is equipped with the silica gel bed course.
Specifically, both end faces of the chip are connected with protruding aluminum foil layers, the aluminum foil layers are abutted to the contact portions, and elastic cushion layers are filled between the aluminum foil layers and the chip.
The invention has the beneficial effects that:
according to the diode structure, the pins are designed into an assembled structure, so that the pins are convenient to replace, the structure is simple, the replacement is convenient, the heat-conducting aluminum plate is additionally arranged, and the heat-conducting performance of the diode is improved.
Drawings
Fig. 1 is a schematic structural diagram of a patch diode structure according to the present invention.
Fig. 2 is an enlarged view of a portion a in fig. 1.
Fig. 3 is an enlarged view of a portion B in fig. 1.
The reference signs are: chip 1, epoxy layer 2, mounting hole 21, heat conduction hole 22, protective housing 3, spacing groove 31, pin 4, contact portion 41, spacing portion 42, welding part 43, mounting panel 5, screw 51, heat conduction aluminum plate 6, silica gel bed course 7, aluminium foil layer 8, elastic cushion layer 9.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the embodiments of the present invention are not limited thereto.
As shown in fig. 1-3:
a chip diode structure comprises a chip 1, an epoxy resin layer 2 wrapping the chip 1, and a protective shell 3 sleeved outside the epoxy resin layer 2, wherein the chip 1 comprises a P area and an N area, the P area is formed by doping a part of semiconductor silicon or germanium with a trace of trivalent element boron, the N area is formed by doping another part of semiconductor silicon or germanium with a trace of pentavalent element phosphorus, a PN junction is formed at the junction of the P area and the N area, pins 4 are arranged at two ends of the chip 1, each pin 4 comprises a contact part 41 electrically connected with the chip 1, a limiting part 42 connected at one end of the contact part 41 and a welding part 43 connected at one end of the limiting part 42, mounting plates 5 are fixed on two end faces of the protective shell 3, through holes for the welding part 43 to pass through are arranged in the middle parts of the mounting plates 5, a limiting groove 31 for the limiting part 42 to accommodate is arranged in the middle parts of the two end faces, the bottom of the stopper groove 31 is connected to a mounting hole 21 penetrating the end face of the chip 1, and the contact portion 41 is located in the mounting hole 21.
Preferably, the connection mode of the mounting plate 5 and the protective casing 3 may be a detachable connection mode such as a screw connection, a snap connection, or the like, and in order to make the connection of the mounting plate 5 and the protective casing 3 more firm, the mounting plate 5 is fixedly connected with the protective casing 3 by a screw 51.
Preferably, in order to further improve the heat conduction performance inside the diode, the screw 51 is further provided with a heat conduction hole 22 inside, the heat conduction hole 22 is located in the epoxy resin layer 2, the epoxy resin layer 2 is further provided with a heat conduction aluminum plate 6 inside, the edge of the heat conduction aluminum plate 6 is connected with the heat conduction hole 22, and part of heat energy on the heat conduction aluminum plate 6 is transmitted to the screw 51 through the heat conduction hole 22 and is transmitted to the outside through the screw 51.
Preferably, in order to reduce the friction loss between the welding portion 43 and the mounting plate 5, a silicone cushion 7 is further provided at the junction of the through hole and the welding portion 43.
Preferably, chip 1 both ends face all is connected with bellied aluminium foil layer 8, and aluminium foil layer 8 offsets with contact site 41, and it has elastic cushion 9 to fill between aluminium foil layer 8 and the chip 1, and elastic cushion 9 can be elastic material such as silica gel, rubber for aluminium foil layer 8 is protruding, thereby has guaranteed the good electrical contact performance of aluminium foil layer 8 with contact site 41.
The above examples only show 1 embodiment of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (3)
1. A chip diode structure is characterized by comprising a chip (1), an epoxy resin layer (2) wrapping the chip (1) and a protective shell (3) sleeved outside the epoxy resin layer (2), wherein pins (4) are arranged at two ends of the chip (1), each pin (4) comprises a contact part (41) electrically connected with the chip (1), a limiting part (42) connected with one end of the contact part (41) and a welding part (43) connected with one end of the limiting part (42), mounting plates (5) are fixed on two end faces of the protective shell (3), through holes for the welding parts (43) to pass through are formed in the middle of the mounting plates (5), a limiting groove (31) for accommodating the limiting part (42) is formed in the middle of two end faces of the protective shell (3), a mounting hole (21) penetrating through the end face of the chip (1) is connected to the bottom of the limiting groove (31), contact site (41) are located in mounting hole (21), mounting panel (5) through screw (51) with protective housing (3) fixed connection, screw (51) inboard still is equipped with one heat conduction hole (22), heat conduction hole (22) are located in epoxy layer (2), still be equipped with heat conduction aluminum plate (6) in epoxy layer (2), the edge of heat conduction aluminum plate (6) with heat conduction hole (22) are connected.
2. A patch diode structure according to claim 1, wherein a silicone cushion (7) is further provided at the junction of the through hole and the soldering portion (43).
3. A patch diode structure according to claim 1, wherein two end faces of the chip (1) are connected with protruding aluminum foil layers (8), the aluminum foil layers (8) are in contact with the contact portions (41), and an elastic cushion layer (9) is filled between the aluminum foil layers (8) and the chip (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910774900.4A CN110459518B (en) | 2019-08-21 | 2019-08-21 | Surface-mounted diode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910774900.4A CN110459518B (en) | 2019-08-21 | 2019-08-21 | Surface-mounted diode structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110459518A CN110459518A (en) | 2019-11-15 |
| CN110459518B true CN110459518B (en) | 2021-02-05 |
Family
ID=68488265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910774900.4A Active CN110459518B (en) | 2019-08-21 | 2019-08-21 | Surface-mounted diode structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110459518B (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957851B (en) * | 2016-07-19 | 2018-06-08 | 如皋市大昌电子有限公司 | A kind of tube body for being conveniently replaceable diode pin |
| CN109216469A (en) * | 2017-06-29 | 2019-01-15 | 雷红景 | It can avoid the diode of pin bending |
| CN209150085U (en) * | 2018-12-26 | 2019-07-23 | 互创(东莞)电子科技有限公司 | A kind of dismountable diode |
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2019
- 2019-08-21 CN CN201910774900.4A patent/CN110459518B/en active Active
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| Publication number | Publication date |
|---|---|
| CN110459518A (en) | 2019-11-15 |
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Address after: 517300 No. 10-4, Shenzhen Bao'an (Longchuan) industrial transfer industrial park, Dengyun Town, Longchuan County, Heyuan City, Guangdong Province Patentee after: HEYUAN CHUANGJI ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: No. 10-4, Shenzhen Nanshan (Longchuan) industrial transfer park, Heyuan City, Guangdong Province, 517300 Patentee before: HEYUAN CHUANGJI ELECTRONIC TECHNOLOGY Co.,Ltd. |