CN110444544A - Three-dimensional storage and forming method thereof - Google Patents
Three-dimensional storage and forming method thereof Download PDFInfo
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- CN110444544A CN110444544A CN201910842809.1A CN201910842809A CN110444544A CN 110444544 A CN110444544 A CN 110444544A CN 201910842809 A CN201910842809 A CN 201910842809A CN 110444544 A CN110444544 A CN 110444544A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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Abstract
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of three-dimensional storage and forming method thereof.The forming method of the three-dimensional storage includes the following steps: to provide a substrate have stack layer on the substrate, the stack layer includes nucleus and the staircase areas positioned at the nucleus periphery；Several subregion hierarchic structures area is formed in the staircase areas；Multiple child partitions arranged in the first direction are formed in subregion hierarchic structure area, each child partition includes multiple minor structures along the stepped arrangement of the first direction, and the multistage ladder that each minor structure arranges in a second direction, the ladder height in any two described child partitions are different.This invention simplifies the manufacturing process of three-dimensional storage, the manufacturing cost of three-dimensional storage is reduced, while realizing the raising of three-dimensional storage performance.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of three-dimensional storage and forming method thereof.
Background technique
With the development of plane flash memories, the production technology of semiconductor achieves huge progress.But recently
Several years, the development of plane flash memory encountered various challenges: physics limit, the existing developing technique limit and storage electron density
Limit etc..In this context, to solve the difficulty that encounters of planar flash memory and pursue being produced into for lower unit storage unit
This, a variety of different three-dimensional (3D) flash memories structures are come into being, such as 3D NOR (3D or non-) flash memory and 3D NAND
(3D and non-) flash memory.
Wherein, storage element is used three dimensional pattern layer using its small size, large capacity as starting point by 3D nand memory
Folded highly integrated of layer heap is design concept, produces high unit area storage density, the memory of efficient storage unit performance,
Have become the prevailing technology of emerging memory design and producing.
But in existing three-dimensional storage, not only manufacturing process is complicated, manufacturing cost is high for stepped area, but also
Stepped area side wall deformation problems are more serious, to constrain the raising of three-dimensional storage performance, even three-dimensional caused to be deposited
Reservoir is scrapped.
Therefore, how to simplify the manufacturing process of three-dimensional storage, improve the performance of three-dimensional storage, be urgently to be resolved at present
The technical issues of.
Summary of the invention
One is three-dimensional storage and its manufacturing methods for present invention offer, for solving the manufacture of existing three-dimensional storage
The poor problem of higher cost, performance.
To solve the above-mentioned problems, the present invention provides a kind of forming method of three-dimensional storage, include the following steps:
One substrate is provided, there is stack layer on the substrate, the stack layer includes nucleus and is located at the core
The staircase areas of heart area periphery；
Several subregion hierarchic structures area is formed in the staircase areas；
Multiple child partitions arranged in the first direction are formed in subregion hierarchic structure area, each child partition includes
Along multiple minor structures of the stepped arrangement of the first direction, and each minor structure include arrange in a second direction it is more
Grade ladder, the ladder height in any two described child partitions is different, described in the second direction and the nucleus are directed toward
The direction of staircase areas is parallel, and the first direction and the substrate are parallel and perpendicular to the second direction.
Preferably, the specific steps for forming several subregion hierarchic structures area in the staircase areas include:
The staircase areas is etched along the first direction, is formed along the multiple first of the stepped arrangement of the first direction
Beginning minor structure；
The staircase areas is etched in a second direction, is formed in each initial minor structure and is arranged along the second direction
The multistage ladder of column.
Preferably, more in the initial minor structure along the direction that the staircase areas is directed toward the nucleus
The height of grade ladder is sequentially increased.
Preferably, include: in multiple initial minor structures
One first initial minor structure, positioned at the center in subregion hierarchic structure area；
Two the second initial minor structures, along the first direction, two second initial minor structures are symmetrical
In the opposite sides of the described first initial minor structure.
Preferably, forming specific steps of multiple child partitions in subregion hierarchic structure area includes:
The partial region in a subregion hierarchic structure area is etched along the direction perpendicular to the substrate, forms multiple sons
Subregion, along the direction perpendicular to the substrate, the ladder height in any two described child partitions is different.
Preferably, the tool of the partial region in a subregion hierarchic structure area is etched along the direction perpendicular to the substrate
Body step includes:
Using the center line in the described first initial minor structure along second direction extension as cut-off rule, along the third party
It is located at the subregion hierarchic structure area of the cut-off rule side to etching, forms two child partitions.
Preferably, along the first direction, the width of the first initial minor structure is greater than the described second initial son
Structure.
Preferably, along the first direction, the width of multiple child partitions is different.
To solve the above-mentioned problems, the present invention also provides a kind of three-dimensional storages, comprising:
Substrate, has stack layer on the substrate, and the stack layer includes nucleus and is located at the nucleus
The staircase areas of periphery；
Positioned at several subregion hierarchic structures area of the staircase areas；
Positioned at subregion hierarchic structure area and multiple child partitions arranged in the first direction, each child partition packet
Include multiple minor structures along the stepped arrangement of the first direction, and the multistage that each minor structure arranges in a second direction
Ladder, the ladder height in any two described child partitions is different, and the second direction and the nucleus are directed toward the rank
The direction in terraced region is parallel, and the first direction and the substrate are parallel and perpendicular to the second direction.
Preferably, the quantity of minor structure is different in multiple child partitions.
Preferably, the quantity of minor structure is all the same in multiple child partitions.
Preferably, in the multistage rank along the direction that the staircase areas is directed toward the nucleus, in the minor structure
Ladder is sequentially increased in the height on the direction perpendicular to the substrate.
Preferably, along the first direction, multiple child partitions it is of same size.
Preferably, along the first direction, the width of multiple child partitions is different.
Preferably, in each child partition, multiple minor structures are along the of same size of the first direction.
Preferably, in the side along the center for being directed toward subregion hierarchic structure area from the edge in subregion hierarchic structure area
Upwards, the height of multiple minor structures in each child partition is sequentially increased.
Three-dimensional storage provided by the invention and forming method thereof, by being formed in a subregion hierarchic structure area along vertical
Directly there are multiple child partitions of different height in the direction of substrate, so as to draw grid with different depths in stack layer
Layer, on the one hand, improve the utilization rate of staircase areas；On the other hand, when forming total ladder series with identical quantity,
The present invention can reduce the quantity of mask and the number of etching, to simplify the manufacturing process of three-dimensional storage, reduce by three
Tie up the manufacturing cost of memory；In addition, less etching number can improve the deformation of staircase areas side wall, and then realize three-dimensional
The raising of memory performance.
Detailed description of the invention
Attached drawing 1 is the manufacturing method flow chart of three-dimensional storage in the specific embodiment of the invention；
Attached drawing 2A-2D is that the specific embodiment of the invention main technique section during manufacturing three-dimensional storage shows
It is intended to；
Attached drawing 3 is the structural schematic diagram of three-dimensional storage in the specific embodiment of the invention.
Specific embodiment
The specific embodiment of three-dimensional storage provided by the invention and forming method thereof is done in detail with reference to the accompanying drawing
Explanation.
Three-dimensional storage generally includes substrate and the stack layer on the substrate, and the stack layer includes core space
Domain and the staircase areas being arranged around the nucleus.The nucleus is used for the storage of information；The staircase areas
Positioned at the end of the stack layer, for transmitting control information to the nucleus, to realize information in the nucleus
Read-write.
Traditional staircase areas is unidirectional hierarchic structure.But as the number of plies of stack layer in three-dimensional storage constantly increases
Add, unidirectional hierarchic structure will lead to the increase of staircase areas area and the sharply raising of manufacturing cost.Based on this, subregion ladder
Structure (Staircase Divide Scheme, SDS) is come into being.Subregion hierarchic structure is multiple by being formed in staircase areas
Close step structure, such as using the staircase areas be directed toward nucleus direction as X-direction, it is parallel with substrate surface and with the side X
Be Y-direction to vertical direction, the subregion hierarchic structure just by forming multiple subregions along Y-direction in staircase areas, from
And reduce the area of staircase areas.
But current subregion hierarchic structure needs to be formed by more processing step, such as is with stacking number
For 64 layers, due to the limitation of process, need multiple mask plates that could complete the formation process of staircase areas, including
Multiple finishing/etching (Trim-Etch), so as to cause the rising of manufacturing cost and the increase of manufacturing process complexity.In addition,
Multiple finishing/etching also results in stepped area side wall deformation (sidewall shift) and further deteriorates, so that three-dimensional
Memory performance reduces.
For the manufacturing process of the simplified three-dimensional storage with subregion hierarchic structure, improve the performance of three-dimensional storage,
Present embodiment provides a kind of three-dimensional storage, and attached drawing 1 is the system of three-dimensional storage in the specific embodiment of the invention
Method flow diagram is made, attached drawing 2A-2D is the specific embodiment of the invention main technique during manufacturing three-dimensional storage
Schematic cross-section.Three-dimensional storage described in present embodiment can be but not limited to 3D nand memory.As Fig. 1,
Shown in Fig. 2A-Fig. 2 D, the three-dimensional storage that present embodiment provides includes the following steps:
Step S11 provides a substrate 20, has stack layer 21 on the substrate 20, and the stack layer 21 includes core space
Domain A and staircase areas B positioned at the periphery nucleus A, as shown in Figure 2 A.
Specifically, the substrate 20 can be Si substrate, Ge substrate, SiGe substrate, SOI (Silicon On
Insulator, silicon-on-insulator) substrate or GOI (Germanium On Insulator, germanium on insulator) substrate etc..At this
In specific embodiment, the substrate 20 is preferably silicon substrate, is used to support device architecture on it.The stack layer 21 wraps
Include the interlayer insulating film and sacrificial layer being alternately stacked along the direction (i.e. Z-direction in Fig. 2A) perpendicular to the substrate 20.Institute
The stacking number those skilled in the art for stating stack layer 21 can select according to actual needs, such as 32 layers, 64 layers, 128
Layer or other numbers of plies.In general, stacking number is more, and the integrated level of three-dimensional storage is higher.The interlayer insulating film
Material can be but not limited to oxide material, and the material of the sacrificial layer can be but not limited to nitride material.
Step S12 forms several subregion hierarchic structures area in the staircase areas B, as shown in Figure 2 C.
Preferably, the specific steps for forming several subregion hierarchic structures area in the staircase areas B include:
The staircase areas B is etched along first direction, is formed along the multiple initial of the stepped arrangement of the first direction
Minor structure, the first direction is parallel with the substrate 20, as shown in Figure 2 B；
The staircase areas B is etched in a second direction, is formed in each initial minor structure along the second direction
The multistage ladder 24 of arrangement, the second direction is parallel with the direction that the nucleus A is directed toward the staircase areas B, and institute
State second direction perpendicular to the first direction, as shown in Figure 2 C.
Preferably, along the direction that the staircase areas B is directed toward the nucleus A, in the initial minor structure
Multistage ladder 24 is sequentially increased in the height on the direction perpendicular to the substrate 20.
Preferably, include: in multiple initial minor structures
One first initial minor structure 231, positioned at the center in subregion hierarchic structure area；
Two the second initial minor structures 232, along the first direction, two second initial minor structures 232 are right
Claim the opposite sides for being distributed in the described first initial minor structure 231.
Specifically, before forming subregion hierarchic structure area, it is also necessary to using photoetching process to the stepped region
Domain B is performed etching close to the part of the nucleus A, forms top area 22 selection grid (Top Selected Gate, TSG).
Those skilled in the art can be set according to actual needs the number of initial minor structure in subregion hierarchic structure area
Amount, present embodiment are not construed as limiting this, below by taking subregion hierarchic structure area includes four initial minor structures as an example
It is illustrated.In fig. 2b, the first direction is X-direction, and the second direction is Y direction, perpendicular to the substrate
20 direction is Z-direction.By being performed etching to the staircase areas B, can be formed successively arrange along the y axis it is multiple
Subregion hierarchic structure area (illustrates only a subregion hierarchic structure area) in Fig. 2 B, and adjacent sectors hierarchic structure area is spaced apart
Preset distance, the shape in area's hierarchic structure area for example can be long strip type.Each subregion hierarchic structure area includes equal
For four initial minor structures of strip, i.e., the first initial minor structure 231, the second initial minor structure 232, the initial minor structure of third
233 and the 4th initial minor structure 234.The initial minor structure in subregion hierarchic structure area in present embodiment is in
The hierarchic structure of centre, i.e., the described first initial minor structure 231 is located at the center in subregion hierarchic structure area, at the beginning of described first
The opposite sides of beginning minor structure 231 along the y axis is distributed with the initial son knot of the described second initial minor structure 232, the third
Structure 233 and the 4th initial minor structure 234.In the side of the described first initial minor structure 231, the 4th initial minor structure
234, the initial minor structure 233 of the third, the second initial minor structure 232, the first initial minor structure 231 along Y-axis just
The ladder-like arrangement that direction gradually rises in height；In the other side of the described first initial minor structure 231, the described 4th initial son
The initial minor structure 233 of structure 234, the third, the second initial minor structure 232, the first initial minor structure 231 are along Y
The ladder-like arrangement that axis negative direction gradually rises in height.Each initial minor structure is along Y-axis side in subregion hierarchic structure area
To width and adjacent initial minor structure between along Z-direction ladder height can it is identical, can also be different, this field skill
Art personnel can select according to actual needs, and present embodiment is not construed as limiting this.
The staircase areas B is being etched in a second direction, is formed in each initial minor structure and is arranged along the second direction
When the multistage ladder of column, finishing/etching technics can be used.Specifically, firstly, covering light in subregion hierarchic structure area
Photoresist；Then, synchronous to multiple initial minor structures in subregion hierarchic structure area to carry out first time etching, in each initial
First order ladder is formed in minor structure；Later, make the photoresist along X-axis positive direction (i.e. institute by modes such as oxygen calcinations
State the direction that staircase areas B is directed toward the nucleus A) one ladder width of reduction；Then, to subregion hierarchic structure area
In multiple initial minor structures it is synchronous carry out second and etch, second level ladder is formed in each initial minor structure；Later, lead to
Cross the modes such as oxygen calcination make the photoresist along X-axis positive direction (the i.e. described staircase areas B is directed toward the nucleus A's
Direction) reduce after a ladder width again, it is synchronous to multiple initial minor structures in subregion hierarchic structure area to carry out the
It etches three times, forms third level ladder in each initial minor structure.By the way that above-mentioned photoresist reduction, etching step is repeated several times
Suddenly, the multistage ladder arranged along the x axis, and lower layer's ladder of the closer substrate 20 are formed in each initial minor structure
Upper layer ladder adjacent thereto is protruded from along X-axis negative direction.
Step S13 forms multiple child partitions arranged in the first direction in subregion hierarchic structure area, each son
Subregion includes multiple minor structures along the stepped arrangement of the first direction, and each minor structure includes in a second direction
The multistage ladder of arrangement, the ladder height in any two described child partitions is different, the second direction and the nucleus
The direction for being directed toward the staircase areas is parallel, and the first direction and the substrate are parallel and perpendicular to the second direction, such as
Shown in Fig. 2 D.
Preferably, forming specific steps of multiple child partitions in subregion hierarchic structure area includes:
The partial region in a subregion hierarchic structure area is etched along the direction perpendicular to the substrate 20, is formed multiple
Child partition, along the direction perpendicular to the substrate 20, the ladder height of any two child partitions is different.
Specifically, (Chop Etch) technique, i.e. one along Z-direction etching predetermined number of layers are lost by using nicking
Partial region in subregion hierarchic structure area, etching height H can be selected according to actual needs, so that at described point
The different child partition of height is formed in hierarchic structure area, area.The equal difference of the ladder height of any two child partitions refers to, multiple described
Height of the ladder of identical series in Z-direction is different in child partition.There is no along Z in subregion hierarchic structure area
The identical two-stage ladder of height in axis direction, i.e. height of all ladders in Z-direction in subregion hierarchic structure area
It is different, the identical two-stage ladder of height is not present in child partition described in any two, connects in order to subsequent with metal contact line
It connects.
By being formed in a subregion hierarchic structure area along the mutually different multiple child partitions of Z-direction height,
Such as two mutually different child partitions of height, i.e. the first child partition D1 and the second child partition D2 are shown in Fig. 2 D, and first
Child partition D1 and the second child partition D2 includes four minor structures.Include in the second child partition D2 is in ladder along the y axis
Shape arrangement the 4th minor structure 334, third minor structure 333, the second minor structure 332 and the first minor structure 331, and along perpendicular to
On the direction of the substrate 20, the 4th minor structure 334, third minor structure 333, the second minor structure 332 and the first minor structure 331
Height is sequentially increased along Y-axis positive direction.Correspondingly, also including stepped arrangement along the y axis in the first child partition D1
Four minor structures, and in the first child partition D1 four minor structures height with four sons in the second child partition D2
The height of structure is different, i.e., the height of any two-stage ladder is not in the described first child partition D1 and the second child partition D2
Together.
By using above structure, so that the number for the grid layer that can be drawn in a subregion hierarchic structure area
Increase at double (such as forms two child partitions, the number for the grid layer that can be drawn in subregion hierarchic structure area
Double), improve the utilization rate of the staircase areas.Moreover, in this embodiment, only having carried out once repairing
Whole/etch step simplifies the manufacturing step of three-dimensional storage, saves manufacturing cost.Moreover, finishing/quarter of fewer number
Step is lost, the deformation of side wall between adjacent steps can be alleviated, to realize the improvement to three-dimensional storage performance.
Preferably, the tool of the partial region in a subregion hierarchic structure area is etched along the direction perpendicular to the substrate
Body step includes:
Using in the described first initial minor structure 231 along the second direction extend center line as cut-off rule, along perpendicular to
The direction etching of the substrate is located at the subregion hierarchic structure area of the cut-off rule side, forms two child partitions.
Specifically, in the first direction (i.e. Y direction), the width of the first initial minor structure 231 can
To be greater than the described second initial minor structure 232, might be less that or be equal to the described second initial minor structure 232.By with institute
Stating the center line extended along the x axis in the first initial minor structure 231 is cut-off rule, to one in subregion hierarchic structure area
Half carries out nicking erosion, can form the first child partition D1 and the second child partition D2 as shown in Figure 2 D, and first child partition
The height of same size but along Z-direction of D1 and the second child partition D2 along the y axis is different.
Specifically, if the number of plies of stack layer is c in the three-dimensional storage, each subregion hierarchic structure is distinguished
For b initial minor structures, when etching the staircase areas B in a second direction and forming the multistage ladder arranged in a second direction,
Finishing/etching number is T (a-1) E (a), and the number of child partition is d in subregion hierarchic structure area, then it is following right to exist
Should be related to c=a × b × d, wherein T (a-1) indicate finishing/etching process in photoresist reduction number, E (a) indicate finishing/
The number etched in etching process.For example, as c=64, d=2, b=4, photoresist reduces in finishing/etching process
Number is 8, the number of etching is 9.
Preferably, along the first direction, the width of multiple child partitions is different.
In other specific embodiments, those skilled in the art can control the first child partition D1 and described second
Child partition D2 along the y axis of different size.
Moreover, present embodiment additionally provides a kind of three-dimensional storage, and attached drawing 3 is specific embodiment party of the present invention
The structural schematic diagram of three-dimensional storage in formula, three-dimensional storage described in present embodiment can use A- as shown in Figure 1, Figure 2
Method shown in Fig. 2 D is formed.Three-dimensional storage described in present embodiment can be but not limited to 3D NAND storage
Device.Shown in A- Fig. 2 D and Fig. 3 as shown in Figure 1, Figure 2, the three-dimensional storage that present embodiment provides includes:
Substrate 20, has stack layer 21 on the substrate 20, and the stack layer 21 includes nucleus A and is located at described
The staircase areas B of the periphery nucleus A；
Positioned at several subregion hierarchic structures area of the staircase areas B；
Positioned at subregion hierarchic structure area and multiple child partitions arranged in the first direction, each child partition packet
Include multiple minor structures along the stepped arrangement of the first direction, and the multistage that each minor structure arranges in a second direction
Ladder, the ladder height in any two described child partitions is different, and the second direction and the nucleus A are directed toward the rank
The direction of terraced region B is parallel, and the first direction and the substrate 20 are parallel and perpendicular to the second direction.
The specific value of height difference H between neighboring sub-partition between the ladder of identical series, those skilled in the art can
To be arranged according to actual needs, such as H is greater than the difference in height between adjacent sectors.Present embodiment is not construed as limiting this.
For example, as shown in figure 3, subregion hierarchic structure area includes the first child partition D1 and the second child partition D2, and described the
The height of one child partition D1 is higher than the height of the second child partition D2, i.e., any ladder is along Z axis in the described first child partition D1
The height in direction (i.e. perpendicular to the direction of the substrate 20) is greater than any ladder in the second child partition D2 along Z-direction
Highly.Such as: including the 4th minor structure 334 of stepped arrangement, third sub- knot along the y axis in the second child partition D2
Structure 333, the second minor structure 332 and the first minor structure 331, and along direction of the edge perpendicular to the substrate 20, the 4th minor structure
334, the height of third minor structure 333, the second minor structure 332 and the first minor structure 331 is sequentially increased along Y-axis positive direction.Accordingly
, four minor structures in the first child partition D1 also including stepped arrangement along the y axis, and first child partition
The height of four minor structures is different from the height of four minor structures in the second child partition D2 in D1, i.e., described first son point
Area D1 and the height of two-stage ladder any in the second child partition D2 are different.
Preferably, the quantity of minor structure is different in multiple child partitions.
Preferably, the quantity of minor structure is all the same in multiple child partitions.
Preferably, in the multistage along the direction that the staircase areas B is directed toward the nucleus A, in the minor structure
Ladder is sequentially increased in the height on the direction perpendicular to the substrate 20.
For example, the first direction is Y direction, the second direction is X-direction.The second child partition D2
In include the 4th minor structure 334 along the stepped arrangement of Y-axis positive direction, third minor structure 333, the second minor structure 332 and
One minor structure 331, the first child partition D1 and the second child partition D2 are symmetrical about X-axis.Each minor structure
In include the multistage ladder arranged along the x axis.In same minor structure in adjacent two-stage ladder, the closer substrate 20
One ladder protrudes from another ladder along X-axis negative direction.
Preferably, along the first direction, multiple child partitions it is of same size.
Preferably, along the first direction, the width of multiple child partitions is different.
Preferably, in each child partition, multiple minor structures are along the of same size of the first direction.
Preferably, in the side along the center for being directed toward subregion hierarchic structure area from the edge in subregion hierarchic structure area
Upwards, the height of multiple minor structures in each child partition is sequentially increased.
The three-dimensional storage and forming method thereof that present embodiment provides, by a subregion hierarchic structure area
Multiple child partitions that there is different height along the direction perpendicular to substrate are formed, so as to draw there are different depths in stack layer
The grid layer of degree, on the one hand, improve the utilization rate of staircase areas；On the other hand, when formation has total ladder of identical quantity
When series, the present invention can reduce the quantity of mask and the number of etching, thus the manufacturing process of simplified three-dimensional storage,
Reduce the manufacturing cost of three-dimensional storage；In addition, less etching number can improve the deformation of staircase areas side wall, Jin Ershi
The raising of existing three-dimensional storage performance.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (16)
1. a kind of forming method of three-dimensional storage, which comprises the steps of:
One substrate is provided, there is stack layer on the substrate, the stack layer includes nucleus and is located at the core space
The overseas staircase areas enclosed；
Several subregion hierarchic structures area is formed in the staircase areas；
Multiple child partitions arranged in the first direction are formed in subregion hierarchic structure area, each child partition includes along institute
Multiple minor structures of the stepped arrangement of first direction are stated, and each minor structure includes the multistage rank arranged in a second direction
Ladder, the ladder height in any two described child partitions is different, and the second direction and the nucleus are directed toward the ladder
The direction in region is parallel, and the first direction and the substrate are parallel and perpendicular to the second direction.
2. the forming method of three-dimensional storage according to claim 1, which is characterized in that form several subregion hierarchic structures
The specific steps of staircase areas described in Qu Yu include:
The staircase areas is etched along the first direction, forms multiple initial sons along the stepped arrangement of the first direction
Structure；
The staircase areas is etched in a second direction, and formation is arranged along the second direction in each initial minor structure
Multistage ladder.
3. the forming method of three-dimensional storage according to claim 2, which is characterized in that be directed toward along the staircase areas
On the direction of the nucleus, the height of the multistage ladder in the initial minor structure is sequentially increased.
4. the forming method of three-dimensional storage according to claim 2, which is characterized in that in multiple initial minor structures
Include:
One first initial minor structure, positioned at the center in subregion hierarchic structure area；
Two the second initial minor structures, along the first direction, two second initial minor structures are symmetrically distributed in institute
State the opposite sides of the first initial minor structure.
5. the forming method of three-dimensional storage according to claim 4, which is characterized in that formed arranged in the first direction
Specific steps of multiple child partitions in subregion hierarchic structure area include:
The partial region in a subregion hierarchic structure area is etched along the direction perpendicular to the substrate, forms multiple sons point
Area, along the direction perpendicular to the substrate, the ladder height in any two described child partitions is different.
6. the forming method of three-dimensional storage according to claim 5, which is characterized in that along the side perpendicular to the substrate
The specific steps of partial region into one subregion hierarchic structure area of etching include: with edge in the described first initial minor structure
The center line that the second direction extends is cut-off rule, is located at the cut-off rule side along the direction etching perpendicular to the substrate
Subregion hierarchic structure area, form two child partitions.
7. the forming method of three-dimensional storage according to claim 6, which is characterized in that along the first direction,
The width of the first initial minor structure is greater than the described second initial minor structure.
8. the forming method of three-dimensional storage according to claim 1, which is characterized in that along the first direction,
The width of multiple child partitions is different.
9. a kind of three-dimensional storage characterized by comprising
Substrate, has stack layer on the substrate, and the stack layer includes nucleus and is located at the nucleus periphery
Staircase areas；
Positioned at several subregion hierarchic structures area of the staircase areas；
Positioned at subregion hierarchic structure area and multiple child partitions arranged in the first direction, each child partition includes edge
Multiple minor structures of the stepped arrangement of first direction, and the multistage rank that each minor structure arranges in a second direction
Ladder, the ladder height in any two described child partitions is different, and the second direction and the nucleus are directed toward the ladder
The direction in region is parallel, and the first direction and the substrate are parallel and perpendicular to the second direction.
10. three-dimensional storage according to claim 9, which is characterized in that the quantity of minor structure in multiple child partitions
It is different.
11. three-dimensional storage according to claim 9, which is characterized in that the quantity of minor structure in multiple child partitions
It is all the same.
12. three-dimensional storage according to claim 9, which is characterized in that be directed toward the core along the staircase areas
On the direction in region, the multistage ladder in the minor structure is sequentially increased in the height on the direction perpendicular to the substrate.
13. three-dimensional storage according to claim 9, which is characterized in that along the first direction, multiple sons
Subregion it is of same size.
14. three-dimensional storage according to claim 9, which is characterized in that along the first direction, multiple sons
The width of subregion is different.
15. three-dimensional storage according to claim 9, which is characterized in that in each child partition, multiple sons
Structure is of same size along the first direction.
16. three-dimensional storage according to claim 9, which is characterized in that along the side from subregion hierarchic structure area
Edge is directed toward on the direction at the center in subregion hierarchic structure area, and the height of multiple minor structures in each child partition is successively
Increase.
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