CN110429843A - A kind of MMC Shuangzi module topology with DC side failure self-cleaning ability - Google Patents

A kind of MMC Shuangzi module topology with DC side failure self-cleaning ability Download PDF

Info

Publication number
CN110429843A
CN110429843A CN201910696447.XA CN201910696447A CN110429843A CN 110429843 A CN110429843 A CN 110429843A CN 201910696447 A CN201910696447 A CN 201910696447A CN 110429843 A CN110429843 A CN 110429843A
Authority
CN
China
Prior art keywords
insulated gate
gate bipolar
diode
bipolar transistor
mmc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910696447.XA
Other languages
Chinese (zh)
Inventor
张祝祥
张忠德
贾立新
杨立霞
王毅
翟志豪
朱耿超
齐亚周
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ningxia Northwest Courser Motor Manufacturing Co Ltd
Xian Jiaotong University
Original Assignee
Ningxia Northwest Courser Motor Manufacturing Co Ltd
Xian Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ningxia Northwest Courser Motor Manufacturing Co Ltd, Xian Jiaotong University filed Critical Ningxia Northwest Courser Motor Manufacturing Co Ltd
Priority to CN201910696447.XA priority Critical patent/CN110429843A/en
Publication of CN110429843A publication Critical patent/CN110429843A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J3/00—Circuit arrangements for ac mains or ac distribution networks
    • H02J3/36—Arrangements for transfer of electric power between ac networks via a high-tension dc link
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/325—Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/60—Arrangements for transfer of electric power between AC networks or generators via a high voltage DC link [HVCD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)

Abstract

A kind of MMC Shuangzi module topology with DC side failure self-cleaning ability disclosed by the invention is connected two half-bridge submodules by a connection circuit, in the input terminal and output end of Shuangzi module a reverse blocking circuit in parallel.Connection circuit in Shuangzi module is formed by an insulated gate bipolar transistor and a diode reverse parallel connection；Reverse blocking circuit is formed by a capacitor and a Diode series.When DC side breaks down, reverse blocking circuit plays the role of removing fault current, which has good versatility, can be used for mixing submodule topology, so that inverter has DC Line Fault Scavenging activity, to guarantee MMC-HVDC system safe and reliable operation.

Description

A kind of MMC Shuangzi module topology with DC side failure self-cleaning ability
Technical field
The invention belongs to modularization multi-level converter in flexible DC transmission (MMC) submodule topological structure field, tools Body is related to a kind of MMC Shuangzi module topology with DC side failure self-cleaning ability.
Background technique
In recent years, with the fast development of such as wind energy, the solar energy distributed energy, it is based on the modular multilevel change of current The D.C. high voltage transmission (MMC-HVDC) of device is used widely.With the voltage source converters phase such as two level or three level Than MMC has the advantages such as low switching frequency, high waveform quality, high failure tolerant rate.Currently, the main direction of studying of MMC includes The topology of inverter and its submodule, system control strategy, capacitance voltage balance policy, loop current suppression strategy and error protection Deng wherein error protection plays the safe and reliable operation of MMC-HVDC system crucial effect.
Compared to the internal fault of exchange side failure and inverter in error protection, the error protection difficulty of DC side is more Greatly, cost is higher.There are three types of the processing methods for being directed to DC side failure at present: first is that using exchange side breaker；Second is that using DC side breaker；Third is that using the topology with fault clearance ability, including inverter topology and submodule in inverter inside Block topology.First two method is since using mechanical switch, response speed is slower, and under high pressure to breaker It is required that higher, cost is accordingly higher.The third method cooperates the control of power device by improving the topology of inverter inside again Signal come achieve the purpose that remove fault current, to protect inverter.At present the third method achieved it is certain at Fruit, wherein the submodule with DC side fault clearance ability has full-bridge submodule (FBSM) and series connection Shuangzi module (SDSM) Deng.From the point of view of the power device quantity that submodule needs, every one level of output of FBSM needs 4 power devices, and cost is obvious It is higher；And SDSM is then to need 2.5 power devices, and most intermediate power device needs to bear 2 times of capacitance voltage.
Summary of the invention
For the DC side failure problems of MMC in the prior art, the present invention provides a kind of with DC side failure self-cleaning The MMC Shuangzi module topology of ability, to remove DC side fault current.
The present invention is to be achieved through the following technical solutions:
A kind of MMC Shuangzi module topology with DC side failure self-cleaning ability, including the identical half-bridge of two structures Submodule, two half-bridge submodules are connected by connection circuit, two concatenated half-bridge submodules reverse blocking circuits in parallel, Reverse blocking circuit is connect with input terminal, and reverse blocking circuit is used to block the failure electricity for flowing into Shuangzi module from input cathode Stream；
Half-bridge submodule includes two insulated gate bipolar transistors, two diodes and a capacitor；
Two diodes are in parallel with two insulated gate bipolar transistors respectively, the cathode and insulated gate bipolar of diode The anode of transistor collector connection, diode is connect with insulated gate bipolar transistor emitter；First insulated gate bipolar The emitter of transistor is connect with the second insulated gate bipolar transistor collector, capacitor and two concatenated insulated gate bipolars Coupled in parallel；
The connection section of the emitter of first insulated gate bipolar transistor and the second insulated gate bipolar transistor collector Point is the input terminal of half-bridge submodule, and the emitter of the second insulated gate bipolar transistor and the connecting node of capacitor are half-bridge The output end of module；
One end of connection circuit is connect with the output end of the first half-bridge submodule, connects the other end and the second half-bridge of circuit The input terminal of submodule connects；One end of reverse blocking circuit is connect with the input terminal of the first half-bridge submodule, reverse blocking electricity The other end on road is connect with the input terminal of the second half-bridge submodule.
Preferably, the connection circuit includes an insulated gate bipolar transistor and a diode, and diode is born Pole is connect with insulated gate bipolar transistor collector,The anode of diode is connect with insulated gate bipolar transistor emitter；
The source level of insulated gate bipolar transistor connects the output end of the first half-bridge submodule, insulated gate bipolar transistor Drain electrode connection the second half-bridge submodule input terminal.
Preferably, the reverse blocking circuit includes diode and capacitor, and one end of capacitor and the anode of diode connect, The cathode of diode is connect with the input terminal of the first half-bridge submodule, and the cathode of diode is the anode input of MMC Shuangzi module End, the output end of the other end of capacitor and the second half-bridge submodule, and be the negative input of MMC Shuangzi module.
Compared with prior art, the invention has the following beneficial technical effects:
The invention discloses a kind of MMC Shuangzi module topologies with DC side failure self-cleaning ability, are connected by one Circuit connects two half-bridge submodules, in the input terminal and output end of Shuangzi module a reverse blocking circuit in parallel.It is double Connection circuit in submodule is formed by an insulated gate bipolar transistor and a diode reverse parallel connection；Reverse blocking Circuit is formed by a capacitor and a Diode series.When DC side breaks down, all insulated gate bipolars are brilliant The locking of body pipe, reverse blocking circuit play the role of removing fault current.Compared with full-bridge submodule, which is being exported Less power device is used under conditions of same level number, to reduce cost.On control strategy, in Shuangzi module half Bridge submodule is consistent with normal half-bridge submodule, does not need additional control algolithm.In addition, the Shuangzi module has very well Versatility, can be used for mixing submodule topology so that inverter has DC Line Fault Scavenging activity, to guarantee MMC-HVDC System safe and reliable operation.
Detailed description of the invention
Fig. 1 is Shuangzi module topology structure of the present invention；
Fig. 2 is the circuit diagram of the Shuangzi module topology of the present invention current path that electric current is flowed into from anode in failure conditions；
Fig. 3 is the circuit diagram of the Shuangzi module topology of the present invention current path that electric current is flowed into from cathode in failure conditions.
Specific embodiment
Present invention will be described in further detail below with reference to the accompanying drawings, described to be explanation of the invention rather than limit It is fixed.
Refering to fig. 1, a kind of MMC Shuangzi module topology with DC side failure self-cleaning ability, including it is connection circuit, anti- To blocking circuit and the identical half-bridge submodule (HBSM) of two structures.
Two half-bridge submodules are by connection circuit series connection, and reverse blocking circuit is in parallel with two half-bridge submodules, reversely Circuit is blocked to connect with input terminal.
Half-bridge submodule HBSM1Including insulated gate bipolar transistor T1, insulated gate bipolar transistor T2, diode D1、 Diode D2With capacitor C1；
Diode D1With insulated gate bipolar transistor T1Parallel connection, diode D1Cathode and insulated gate bipolar transistor T1Collector connection,Diode D1Anode with insulated gate bipolar transistor T1Emitter connection；
Diode D2With insulated gate bipolar transistor T2Parallel connection, diode D2Cathode and insulated gate bipolar transistor T2Collector connection,Diode D2Anode with insulated gate bipolar transistor T2Emitter connection；
Insulated gate bipolar transistor T1With insulated gate bipolar transistor T2Series connection, insulated gate bipolar transistor T1's Emitter and insulated gate bipolar transistor T2Collector connection, capacitor C1With insulated gate bipolar transistor T1It is double with insulated gate Bipolar transistor T2Parallel connection, capacitor C1One end and insulated gate bipolar transistor T1Collector connection, capacitor C1The other end With insulated gate bipolar transistor T2Emitter connection；
Insulated gate bipolar transistor T1Emitter and insulated gate bipolar transistor T2The connecting node of collector is half Bridge submodule HBSM1Input terminal, insulated gate bipolar transistor T2Emitter and capacitor C1Connecting node be half-bridge submodule HBSM1Output end.
Half-bridge submodule HBSM2Including insulated gate bipolar transistor T3, insulated gate bipolar transistor T4, diode D3、 Diode D4With capacitor C2；
Because of half-bridge submodule HBSM1With half-bridge submodule HBSM2Structure is identical, the connection type of specific electrical component with Half-bridge submodule HBSM1It is identical, therefore repeat no more.
Insulated gate bipolar transistor T3Emitter and insulated gate bipolar transistor T4The connecting node of collector is half Bridge submodule HBSM2Input terminal, insulated gate bipolar transistor T4Emitter and capacitor C2Connecting node be half-bridge submodule HBSM2Output end.
Connecting circuit includes an insulated gate bipolar transistor T5With a diode D5, diode D5It is double with insulated gate Bipolar transistor T5Parallel connection, diode D5Cathode and insulated gate bipolar transistor T1Collector connection,Diode D5Anode With insulated gate bipolar transistor T5Emitter connection；
Insulated gate bipolar transistor T5Source level connect half-bridge submodule HBSM1Output end, insulated gate bipolar crystal Pipe T5Drain electrode connect half-bridge submodule HBSM2Input terminal.
Reverse blocking circuit includes diode D6With capacitor C3, capacitor C3One end and diode D6Anode connection, two poles Pipe D6Cathode respectively with half-bridge submodule HBSM1Input terminal and input terminal anode connection, capacitor C3The other end respectively with Half-bridge submodule HBSM2Output end connected with the cathode of input terminal.
Below to a kind of work of the MMC Shuangzi module topology with DC side failure self-cleaning ability provided by the invention Principle is described in detail.
When normal work, two half-bridge submodule independent controls are consistent with normal half-bridge submodule；When malfunction, All insulated gate bipolar transistors are all latched, so that fault current is quickly removed, the operating mode of MMC Shuangzi module topology See Table 1 for details.
The operating mode of table 1MMC Shuangzi module topology
(1) when working normally, insulated gate bipolar transistor T5It remains opening state, is broadly divided into 4 modes:
①T2=T4=1, T1=T3When=0, the output voltage U of MMC Shuangzi module topologyo=0；
②T1=T4=1, T2=T3When=0, the output voltage U of MMC Shuangzi module topologyo=Uc；
③T2=T3=1, T1=T4When=0, the output voltage U of MMC Shuangzi module topologyo=Uc；
④T1=T3=1, T2=T4When=0, the output voltage U of MMC Shuangzi module topologyo=2Uc。
(2) under malfunction, as shown in Figures 2 and 3, all insulated gate bipolar transistors are all latched, and are divided into two Mode:
1. group blocks current ismWhen > 0, MMC Shuangzi module topology output voltage Uo=2Uc；
2. group blocks current ismWhen < 0, MMC Shuangzi module topology output voltage Uo=-Uc。
(3) below by taking ab phase circuit as an example, the DC side fault clearance ability of Shuangzi module proposed by the present invention is carried out Analysis:
When fault current is flowed into from anode, according to circuit theory and the fundamental property of MMC, meet
In formula, uabTo exchange side phase voltage instantaneous value, UDFor diode voltage, Uc1And Uc2Respectively represent C1And C2Reality Voltage, UlaFor arm inductive drop, UabFor phase voltage uabAmplitude.
By abbreviation, obtain
It can be seen that diode is not turned on, therefore the MMC Shuangzi module since the sum of three diode voltage is less than 0 Topology can quickly remove fault current with this condition.Similarly, also available fault current from cathode flow into when as a result, C3After being charged to certain value, fault current can be blocked.
MMC Shuangzi module topology provided by the invention with DC Line Fault Scavenging activity, compared to full-bridge submodule, energy Enough significantly reduce cost.In the normal mode of operation, MMC Shuangzi module topology proposed by the present invention is equivalent to two half-bridge submodules Block respectively works independently, therefore the control strategy of half-bridge submodule and normal half-bridge submodule one in the Shuangzi module proposed It causes, varies without, effectively save computing resource.
MMC Shuangzi module topology provided by the invention with DC Line Fault Scavenging activity has technology effect beneficial below Fruit:
(1) the MMC Shuangzi module topology with DC Line Fault Scavenging activity, the insulated gate bipolar connected in circuit are brilliant Body pipe T5It only need to keep open-minded in normal operating phase, be not required to excessive algorithm control, computing resource can be saved.
(2) half-bridge circuit and normal half-bridge submodule controlling party under normal mode of operation, in MMC Shuangzi module topology Method is consistent, varies without control method, can export three kinds of level.
(3) no matter fault current is flowed into from anode inflow or cathode, and MMC Shuangzi module topology all has removing failure The effect of electric current.
(4) every one level of output of MMC Shuangzi module topology needs 2.5 insulated gate bipolar transistors, 3 two poles Pipe, 1.5 capacitors can significantly reduce device cost compared with full-bridge submodule.
The above content is merely illustrative of the invention's technical idea, and this does not limit the scope of protection of the present invention, all to press According to technical idea proposed by the present invention, any changes made on the basis of the technical scheme each falls within claims of the present invention Protection scope within.

Claims (3)

1. a kind of MMC Shuangzi module topology with DC side failure self-cleaning ability, which is characterized in that including two structure phases Same half-bridge submodule, two half-bridge submodules are by connection circuit series connection, and two concatenated half-bridge submodules parallel connections one are reversely Circuit is blocked, reverse blocking circuit is connect with input terminal, and reverse blocking circuit flows into Shuangzi mould for blocking from input cathode The fault current of block；
Half-bridge submodule includes two insulated gate bipolar transistors, two diodes and a capacitor；
Two diodes are in parallel with two insulated gate bipolar transistors respectively, the cathode and insulated gate bipolar crystal of diode The anode of pipe collector connection, diode is connect with insulated gate bipolar transistor emitter；First insulated gate bipolar crystal The emitter of pipe is connect with the second insulated gate bipolar transistor collector, capacitor and two concatenated insulated gate bipolar crystal Pipe is in parallel；
The emitter of first insulated gate bipolar transistor and the connecting node of the second insulated gate bipolar transistor collector are The input terminal of half-bridge submodule, the emitter of the second insulated gate bipolar transistor and the connecting node of capacitor are half-bridge submodule Output end；
One end of connection circuit is connect with the output end of the first half-bridge submodule, connects the other end and the second half-bridge submodule of circuit The input terminal of block connects；One end of reverse blocking circuit is connect with the input terminal of the first half-bridge submodule, reverse blocking circuit The other end is connect with the input terminal of the second half-bridge submodule.
2. according to claim 1 with the MMC Shuangzi module topology of DC side failure self-cleaning ability, which is characterized in that The connection circuit includes an insulated gate bipolar transistor and a diode, the cathode and insulated gate bipolar of diode Transistor collector connection,The anode of diode is connect with insulated gate bipolar transistor emitter；
The source level of insulated gate bipolar transistor connects the output end of the first half-bridge submodule, the leakage of insulated gate bipolar transistor Pole connects the input terminal of the second half-bridge submodule.
3. according to claim 1 with the MMC Shuangzi module topology of DC side failure self-cleaning ability, which is characterized in that The reverse blocking circuit includes diode and capacitor, and one end of capacitor and the anode of diode connect, the cathode of diode with The input terminal of first half-bridge submodule connects, and the cathode of diode is the electrode input end of MMC Shuangzi module, the other end of capacitor With the output end of the second half-bridge submodule, and be MMC Shuangzi module negative input.
CN201910696447.XA 2019-07-30 2019-07-30 A kind of MMC Shuangzi module topology with DC side failure self-cleaning ability Pending CN110429843A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910696447.XA CN110429843A (en) 2019-07-30 2019-07-30 A kind of MMC Shuangzi module topology with DC side failure self-cleaning ability

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910696447.XA CN110429843A (en) 2019-07-30 2019-07-30 A kind of MMC Shuangzi module topology with DC side failure self-cleaning ability

Publications (1)

Publication Number Publication Date
CN110429843A true CN110429843A (en) 2019-11-08

Family

ID=68411450

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910696447.XA Pending CN110429843A (en) 2019-07-30 2019-07-30 A kind of MMC Shuangzi module topology with DC side failure self-cleaning ability

Country Status (1)

Country Link
CN (1) CN110429843A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110890743A (en) * 2019-11-25 2020-03-17 上海交通大学 Low-loss modular multilevel DC transformer with fault blocking capability
CN110890742A (en) * 2019-11-25 2020-03-17 上海交通大学 Direct-current side fault ride-through method of low-loss modular multilevel direct-current transformer
CN110994974A (en) * 2019-11-25 2020-04-10 上海交通大学 Low-loss modular multi-level direct current-direct current converter and submodule thereof
CN111342690A (en) * 2020-03-13 2020-06-26 南京理工大学 Split capacitor power unit multilevel converter and modulation strategy thereof
CN112865506A (en) * 2021-03-17 2021-05-28 西安交通大学 MMC dual-sub-module with bidirectional fault current removal capability
CN113193774A (en) * 2021-05-10 2021-07-30 昆明理工大学 MMC five-level half-bridge anti-series submodule FLHASM topological structure
CN113972633A (en) * 2021-10-21 2022-01-25 广东电网有限责任公司 Modular multilevel converter submodule topological structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103904926A (en) * 2014-03-17 2014-07-02 华北电力大学 Improved modular multilevel transverter submodule topology
CN105281555A (en) * 2015-11-05 2016-01-27 特变电工新疆新能源股份有限公司 Module topology and MMC flexible direct-current transmission system based on same
CN106505897A (en) * 2016-12-29 2017-03-15 华北电力大学 A kind of low-loss MMC submodules topology for possessing DC Line Fault ride-through capability
CN109039100A (en) * 2018-07-25 2018-12-18 许继集团有限公司 A kind of semibridge system submodule of modularization multi-level converter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103904926A (en) * 2014-03-17 2014-07-02 华北电力大学 Improved modular multilevel transverter submodule topology
CN105281555A (en) * 2015-11-05 2016-01-27 特变电工新疆新能源股份有限公司 Module topology and MMC flexible direct-current transmission system based on same
CN106505897A (en) * 2016-12-29 2017-03-15 华北电力大学 A kind of low-loss MMC submodules topology for possessing DC Line Fault ride-through capability
CN109039100A (en) * 2018-07-25 2018-12-18 许继集团有限公司 A kind of semibridge system submodule of modularization multi-level converter

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
XIAOFENG YANG,ET AL: "Reverse Blocking Sub-Module Based Modular Multilevel Converter with DC Fault Ride-Through Capability", 《 2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)》 *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110890743A (en) * 2019-11-25 2020-03-17 上海交通大学 Low-loss modular multilevel DC transformer with fault blocking capability
CN110890742A (en) * 2019-11-25 2020-03-17 上海交通大学 Direct-current side fault ride-through method of low-loss modular multilevel direct-current transformer
CN110994974A (en) * 2019-11-25 2020-04-10 上海交通大学 Low-loss modular multi-level direct current-direct current converter and submodule thereof
CN110994974B (en) * 2019-11-25 2020-11-20 上海交通大学 Low-loss modular multi-level direct current-direct current converter and submodule thereof
CN110890743B (en) * 2019-11-25 2020-11-20 上海交通大学 Low-loss modular multilevel DC transformer with fault blocking capability
CN110890742B (en) * 2019-11-25 2020-11-20 上海交通大学 Direct-current side fault ride-through method of low-loss modular multilevel direct-current transformer
CN111342690A (en) * 2020-03-13 2020-06-26 南京理工大学 Split capacitor power unit multilevel converter and modulation strategy thereof
CN111342690B (en) * 2020-03-13 2021-09-03 南京理工大学 Modulation method of split capacitor power unit multilevel converter
CN112865506A (en) * 2021-03-17 2021-05-28 西安交通大学 MMC dual-sub-module with bidirectional fault current removal capability
CN113193774A (en) * 2021-05-10 2021-07-30 昆明理工大学 MMC five-level half-bridge anti-series submodule FLHASM topological structure
CN113193774B (en) * 2021-05-10 2023-10-31 昆明理工大学 MMC five-level half-bridge anti-serial sub-module FLHASM topological structure
CN113972633A (en) * 2021-10-21 2022-01-25 广东电网有限责任公司 Modular multilevel converter submodule topological structure

Similar Documents

Publication Publication Date Title
CN110429843A (en) A kind of MMC Shuangzi module topology with DC side failure self-cleaning ability
CN206602450U (en) A kind of MMC submodules with direct-current short circuit electric current self-cleaning ability
CN103219738B (en) Direct current transmission system based on three-pole type structure
CN107204626A (en) A kind of LCC MMC interlock hybrid bypolar DC transmission system
CN107968572A (en) A kind of DC solid transformer and its control method with fault ride-through capacity
CN104617803B (en) Multilevel Inverters submodule and its inverter circuit of making, MMC topologys
CN107039980B (en) High-voltage direct current power flow controller
CN108471246B (en) Control method for reducing pressure bearing of switching device of modular multilevel converter
CN105356770B (en) A kind of MMC submodule topological structure based on H bridge
CN108306534B (en) A kind of Modular multilevel converter and its submodule topological structure
CN110224623A (en) A kind of modularization multi-level converter and submodule that DC Line Fault blocks
CN104993716A (en) Modular multilevel converter and hybrid double-unit sub-module
Xu et al. An improved fault-tolerant control strategy for high-power ANPC three-level inverter under short-circuit fault of power devices
CN107947613A (en) A kind of high-voltage large-capacity modularization multi-level converter based on IGCT
CN204046460U (en) A kind of novel Modularized multi-level converter sub-module topology
CN109347335A (en) A kind of multi-level inverter bridge arm topology suitable for current source control
CN207265895U (en) DC Line Fault passes through MMC submodules and the transverter with the submodule
CN109861512A (en) A kind of clamper Shuangzi module with DC Line Fault self-cleaning ability
CN209170243U (en) A kind of modularization multi-level converter
CN207265879U (en) Possess the MMC submodules of fault clearance and the transverter with the submodule
CN207410245U (en) The clamped submodule of capacitance, the modularization multi-level converter using it
CN108092536A (en) A kind of five flat current transformer of device mixed type active clamper
CN107370406A (en) The level MMC submodules of failure self-cleaning three and the transverter with the submodule
CN107404246A (en) Failure self-cleaning MMC submodules and the transverter with the submodule
CN113258802A (en) Submodule topological structure with direct current fault clearing and self-voltage-sharing capabilities

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20191108

RJ01 Rejection of invention patent application after publication