CN107404246A - Failure self-cleaning MMC submodules and the transverter with the submodule - Google Patents
Failure self-cleaning MMC submodules and the transverter with the submodule Download PDFInfo
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- CN107404246A CN107404246A CN201710682872.4A CN201710682872A CN107404246A CN 107404246 A CN107404246 A CN 107404246A CN 201710682872 A CN201710682872 A CN 201710682872A CN 107404246 A CN107404246 A CN 107404246A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Rectifiers (AREA)
Abstract
A kind of failure self-cleaning MMC submodules and the transverter with the submodule, failure self-cleaning MMC submodules include the first switch being sequentially connected in series, second switch, 3rd switch, 4th switch and the 5th switch, the other end of first switch connects one end of the first electric capacity, the intersection point that first switch is connected with second switch is connected one end of the second electric capacity and the negative pole of the 6th diode respectively, the 3rd switch intersection point connected with the 4th switch is connected the other end of the second electric capacity, the 4th switch intersection point connected with the 5th switch is connected the other end of the first electric capacity, the other end of 5th switch connects the positive pole of the 6th diode, second switch forms the positive pole of failure self-cleaning MMC submodules with the intersection point that the 3rd switch is connected, the intersection point that 5th switch is connected with the 6th diode forms the negative pole of failure self-cleaning MMC submodules.The present invention exports three level using MMC submodules reduces the rated voltage or number of devices of power electronic devices, reduces investment, improves economy, realizes fault current self-cleaning.
Description
Technical field
The present invention relates to a kind of MMC submodules.More particularly to a kind of failure self-cleaning MMC submodules and there is the submodule
The transverter of block.
Background technology
HVDC transmission system is by Low investment, stability is high, controls the advantages that flexible in long-distance and large-capacity power transmission
Reasonability and applicability are had more in engineering, larger progradation is played in the development to China's power industry.But traditional height
The power that pressure DC transmission system easily influences system because of commutation failure recovers, and has that waveform quality is poor, high cost lacks
Fall into.With the development of power electronic devices, possess from the voltage source converter of commutation ability and fundamentally overcome above-mentioned lack
Fall into, therefore also there is good development prospect using the DC transmission system (flexible direct current power transmission system) of this kind of transverter.
Transverter is the important device of flexible direct current power transmission system, and common transverter has three kinds, i.e. two level converters,
Diode clamp bit-type three-level converter and modularization multi-level converter (MMC).Compared to other two kinds of topological structures,
MMC has apparent advantage, and such as manufacture difficulty is low, loss is small, waveform quality is high, troubleshooting capability is strong.It is in view of above-mentioned
Advantage, MMC transverters have turned into the main topology of flexible DC power transmission.Conventional flex direct current transportation is using laying ground end electricity
The mode of cable carries out electrical energy transportation, and engineering initial investment is huge, and overhead transmission line then can effectively reduce cost and be applied to ground end
The area of bad environments.But overhead transmission line is easily because direct-current short circuit failure occurs in extraneous or line influence.
The flexible DC power transmission engineering generally use that input engineering uses at present is half-bridge submodule, and direct current occurs for system
During short trouble, alternating current continues Injection Current through diode paths to trouble point, can cause drastically increasing for electric current, significantly
Add the risk of device failure.Conventional AC breaker can block exchange to export, but its reboot time is grown；Dc circuit breaker
It is difficult then to there is exploitation, invests the problems such as larger, the stable operation of system can not obtain effective guarantee.Possesses failure self-cleaning energy
The MMC of power is the effective way to solve the above problems.
The common MMC submodules for possessing failure self-cleaning ability have bridge-type and clamper double type, wherein, full-bridge modules
Power device number is more, high in current conversion station first stage of construction cost of investment；The exportable more level of clamper Shuangzi module, although the knot
Structure reduces the quantity of power device, but the rated voltage level of its additional device is one times of other devices, is not dropped effectively
Low investment cost.
In view of the above problems, reduce the quantity of MMC submodule power devices or rated voltage and it is possessed DC Line Fault
Stable operation and construction investment important in inhibiting of the self-cleaning ability for flexible DC power transmission.
The content of the invention
It can overcome while fault current self-cleaning is realized the technical problem to be solved by the invention is to provide one kind
Failure self-cleaning MMC submodules due to the cost caused by device count and electric stress is high the defects of and there is the submodule
Transverter.
The technical solution adopted in the present invention is：A kind of failure self-cleaning MMC submodules, including be sequentially connected in series
One switch, second switch, the 3rd switch, the 4th switch and the 5th switch, the other end of the first switch connect the first electric capacity
One end, intersection point that the first switch and second switch are connected is connected one end and the 6th diode of the second electric capacity respectively
Negative pole, the 3rd switch intersection point connected with the 4th switch are connected the other end of the second electric capacity, the 4th switch and the 5th
The connected intersection point of switch connects the other end of the first electric capacity, and the other end of the 5th switch is connecting the 6th diode just
Pole, the second switch form the positive pole of failure self-cleaning MMC submodules, the 5th switch with the intersection point that the 3rd switch is connected
The intersection point being connected with the 6th diode forms the negative pole of failure self-cleaning MMC submodules.
Described first switch, second switch, third switch, the 4th switch are identical with the 5th construction of switch, are by one
Individual all-controlling power electronics device is corresponding to be connected and composed with a diode inverse parallel, i.e. the all-controlling power electronics device
The corresponding connection diode of drain electrode negative pole, the source electrode of the all-controlling power electronics device correspondingly connects the positive pole of diode,
Wherein, first switch, second switch, third switch and the 4th switch are the all-controlling power electronics devices in previous switch
Source electrode and the positive pole of diode connect drain electrode and the diode of all-controlling power electronics device in next switch jointly
Negative pole, and the drain electrode of the first all-controlling power electronics device in first switch and the negative pole of the first diode connect first jointly
One end of electric capacity, and the source electrode of the 5th all-controlling power electronics device and the positive pole of the 5th diode in the 5th switch connect jointly
The source electrode of the 4th all-controlling power electronics device and the positive pole of the 4th diode in a switch of switch the i.e. the 4th are connected, it is described
The drain electrode of 5th all-controlling power electronics device and the negative pole of the 5th diode connect the positive pole of the 6th diode, and structure jointly
Into the negative pole of failure self-cleaning MMC submodules.
Described all-controlling power electronics device is insulated gate bipolar transistor, or integrated gate commutated thyristor,
Or gate level turn-off thyristor, or electron injection enhancement gate transistor.
A kind of transverter with failure self-cleaning MMC submodules, includes A phases bridge arm, B phases bridge arm and the C being in parallel
Phase bridge arm, described A phase bridge arms are to be connected in series to form by bridge arm under bridge arm in A phases and A phases, and bridge arm is away from A phases in the A phases
One end of lower bridge arm connects the positive pole of dc bus, and one end connection dc bus of the bridge arm away from bridge arm in A phases is born under the A phases
Pole, the intersection point that bridge arm is connected with bridge arm under A phases in the A phases draw a phases of three phase mains, and described B phase bridge arms are by B phases
Bridge arm is connected in series composition under bridge arm and B phases, and the one end of bridge arm away from bridge arm under B phases is connecting dc bus just in the B phases
Pole, the one end of bridge arm away from bridge arm in B phases connects dc bus negative pole under the B phases, bridge arm under bridge arm and B phases in the B phases
Connected intersection point draws the b phases of three phase mains, and described C phase bridge arms are made up of bridge arm under bridge arm in C phases and C phases, the C phases
Positive pole of the upper bridge arm away from one end connection dc bus of bridge arm under C phases, the one end of bridge arm away from bridge arm in C phases under the C phases
Dc bus negative pole is connected, the c phases for the intersection point extraction three phase mains that bridge arm is connected with bridge arm under C phases in the C phases, described A
Bridge arm under bridge arm, A phases in phase, bridge arm under bridge arm, B phases in B phases, bridge arm is identical with bridge arm structure under C phases in C phases, is by 2
Failure self-cleaning MMC submodules and an inductance above is connected in series composition, and each failure self-cleaning MMC submodule wraps
Include：First switch, second switch, third switch, the 4th switch and the 5th switch being sequentially connected in series, the first switch
The other end connects one end of the first electric capacity, and the intersection point that the first switch is connected with second switch is connected the one of the second electric capacity respectively
End and the negative pole of the 6th diode, the 3rd switch intersection point connected with the 4th switch are connected the other end of the second electric capacity,
4th switch intersection point connected with the 5th switch is connected the other end of the first electric capacity, the other end connection of the 5th switch
The positive pole of 6th diode, the intersection point that the second switch is connected with the 3rd switch form failure self-cleaning MMC submodules
Positive pole, it is described 5th switch be connected with the 6th diode intersection point composition failure self-cleaning MMC submodules negative pole.
Described first switch, second switch, third switch, the 4th switch are identical with the 5th construction of switch, are by one
Individual all-controlling power electronics device is corresponding to be connected and composed with a diode inverse parallel, i.e. the all-controlling power electronics device
The corresponding connection diode of drain electrode negative pole, the source electrode of the all-controlling power electronics device correspondingly connects the positive pole of diode,
Wherein, first switch, second switch, third switch and the 4th switch are the all-controlling power electronics devices in previous switch
Source electrode and the positive pole of diode connect drain electrode and the diode of all-controlling power electronics device in next switch jointly
Negative pole, and the drain electrode of the all-controlling power electronics device in first switch and the negative pole of the first diode connect the first electric capacity jointly
One end, and the 5th switch in the 5th all-controlling power electronics device source electrode and the 5th diode positive pole jointly connection on
The source electrode of the 4th all-controlling power electronics device and the positive pole of the 4th diode in one switch i.e. the 4th switch, the described 5th
Draining for all-controlling power electronics device connects the positive pole of the 6th diode with the negative pole of the 5th diode jointly, and forms event
Hinder the negative pole of self-cleaning MMC submodules.
Described all-controlling power electronics device is insulated gate bipolar transistor, or integrated gate commutated thyristor,
Or gate level turn-off thyristor, or electron injection enhancement gate transistor.
The failure self-cleaning MMC submodules of the present invention and the transverter with the submodule, using submodule simple in construction
Block topology three level of output reduce the rated voltage or number of devices of power electronic devices, reduce investment, improve economy, introduce
Extra power electronic devices blocks direct fault current, realizes fault current self-cleaning.Failure self-cleaning MMC of the present invention
Module and the transverter with the submodule, under equal voltage class, using bridge-type submodule for reference, in the equal level of output
During number, submodule number is only the half of full-bridge submodule, device number be only its 5/8, each device rated voltage level one
Cause, the present invention is reducingd the construction costs by reducing device number.In the case of using identical submodule number, using this hair
Bright failure self-cleaning MMC submodule output levels number is 2 times of full-bridge, and waveform quality is more preferable；Although device number is the latter
1.25 times, but all device rated voltages are only bridge-type submodule half, and holistic cost has larger reduction.To sum up, two kinds
Under scheme, MMC construction costs have declined.
Brief description of the drawings
Fig. 1 is the schematic diagram of failure self-cleaning MMC submodules of the present invention；
Fig. 2 is the composition block diagram for the transverter that the present invention has failure self-cleaning MMC submodules；
Fig. 3 is that electric current flows into MMC submodule current paths when negative pole flows out from MMC submodules positive pole in DC Line Fault；
Fig. 4 is that electric current flows into MMC submodule current paths when positive pole flows out from MMC submodules negative pole in DC Line Fault.
In figure
1：Bridge arm 2 in A phases：Bridge arm in B phases
3：Bridge arm 4 in C phases：Bridge arm under A phases
5：Bridge arm 6 under B phases：Bridge arm under C phases
Embodiment
A kind of failure self-cleaning MMC submodules of the present invention are described in detail with reference to embodiment and accompanying drawing.
As shown in figure 1, a kind of failure self-cleaning MMC submodules of the present invention, including the first switch being sequentially connected in series
K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5, the first switch K1The other end connection first
Electric capacity C1One end, the first switch K1With second switch K2Connected intersection point connects the second electric capacity C respectively2One end and
6th diode D6Negative pole, it is described 3rd switch K3With the 4th switch K4Connected intersection point connects the second electric capacity C2The other end,
The 4th switch K4With the 5th switch K5Connected intersection point connects the first electric capacity C1The other end, it is described 5th switch K5It is another
One end connects the 6th diode D6Positive pole, the second switch K2With the 3rd switch K3Connected intersection point forms failure certainly
Remove the positive pole of MMC submodules, the 5th switch K5With the 6th diode D6Connected intersection point forms failure self-cleaning
The negative pole of MMC submodules.
Described first switch K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5Structure is identical,
It is by an all-controlling power electronics device T1/T2/T3/T4/T5A corresponding and diode D1/D2/D3/D4/D5Inverse parallel connects
Connect composition, i.e. the all-controlling power electronics device T1/T2/T3/T4/T5Drain electrode correspondingly connect diode D1/D2/D3/D4/D5
Negative pole, the all-controlling power electronics device T1/T2/T3/T4/T5Source electrode correspondingly connect diode D1/D2/D3/D4/D5's
Positive pole, wherein, first switch K1, second switch K2, the 3rd switch K3With the 4th switch K4It is previous switch K1/K2/K3In
All-controlling power electronics device T1/T2/T3Source electrode and diode D1/D2/D3Positive pole connect next switch K jointly2/K3/
K4In all-controlling power electronics device T2/T3/T4Drain electrode and diode D2/D3/D4Negative pole, and first switch K1In
One all-controlling power electronics device T1Drain electrode and the first diode D1Negative pole jointly connection the first electric capacity C1One end, and
Five switch K5In the 5th all-controlling power electronics device T5Source electrode and the 5th diode D5Positive pole connect one jointly and open
Close i.e. the 4th switch K4In the 4th all-controlling power electronics device T4Source electrode and the 4th diode D4Positive pole, the described 5th
All-controlling power electronics device T5Drain electrode and the 5th diode D5Negative pole jointly connection the 6th diode D6Positive pole, and
Form the negative pole of failure self-cleaning MMC submodules.
Heretofore described all-controlling power electronics device T1/T2/T3/T4/T5, it is insulated gate bipolar transistor
(IGBT), or integrated gate commutated thyristor (IGCT), OR gate pole cut-off crystal brake tube (GTO), or electron injection enhancement grid are brilliant
Body pipe (IEGT).
A kind of failure self-cleaning MMC submodules of the present invention, make MMC submodule topologys possess the pass of failure self-cleaning ability
Key is the 5th all-controlling power electronics device T5, the 5th diode D5With the 6th diode D6Link position and connected mode.
When DC Line Fault occurs for system, all switching tube signals of locking, MMC submodules are under diode action, according to MMC submodules
MMC the first electric capacity of submodule C is introduced in different sense of current current paths1Or the second electric capacity C2Voltage suppress line voltage.
Diode in current path will be forced closed under backward voltage effect, reach the purpose for removing fault current.
During normal work, the first electric capacity C1Both end voltage is the second electric capacity C2Twice of terminal voltage, i.e. UC1=2UC2=2U；
First all-controlling power electronics device T1With the 4th all-controlling power electronics device T4, the second all-controlling power electronics device T2With
3rd all-controlling power electronics device T3Using the logical triggering signal of complementary conducting, i.e. the first full-control type power electronic device
Part T14th all-controlling power electronics device T when opening4Shut-off, the second all-controlling power electronics device T23rd full control when opening
Type power electronic devices T3Shut-off, the first all-controlling power electronics device T1With the second all-controlling power electronics device T2Logic
Signal is not interfere with each other, with the first all-controlling power electronics device T1~the four all-controlling power electronics device T4Antiparallel two pole
Pipe turns in turn according to MMC submodules input voltage；5th all-controlling power electronics device T5It is independent to trigger logical signal, normally
Trigger signal is always 1 during work；6th diode D6In the second electric capacity C2End all the time under the backward voltage effect of application.Should
Under mode of operation, the combination of switching tube difference pulse signal makes module export the level voltages of 0, U, 2U tri-.
A kind of transverter with failure self-cleaning MMC submodules of the present invention, includes the A phases bridge arm being in parallel, B phases
Bridge arm and C phase bridge arms, described A phase bridge arms are to be connected in series to form by bridge arm 4 under bridge arm 1 in A phases and A phases, bridge in the A phases
Positive pole of the arm 1 away from one end connection dc bus of bridge arm 4 under A phases, the one end of bridge arm 4 away from bridge arm 1 in A phases under the A phases
Dc bus negative pole is connected, a phases for the intersection point extraction three phase mains that bridge arm 1 is connected with bridge arm 4 under A phases in the A phases are described
B phase bridge arms are to be connected in series to form by bridge arm 5 under bridge arm 2 in B phases and B phases, and bridge arm 2 is away from bridge arm 5 under B phases in the B phases
One end connects the positive pole of dc bus, and the one end of bridge arm 5 away from bridge arm 2 in B phases connects dc bus negative pole, institute under the B phases
The b phases that the intersection point that bridge arm 2 is connected with bridge arm 5 under B phases in B phases draws three phase mains are stated, described C phase bridge arms are by bridge in C phases
Bridge arm 6 is formed under arm 3 and C phases, and positive pole of the bridge arm 3 away from one end connection dc bus of bridge arm 6 under C phases, described in the C phases
The one end of bridge arm 6 away from bridge arm 3 in C phases connects dc bus negative pole under C phases, and bridge arm 3 is connected with bridge arm 6 under C phases in the C phases
Intersection point draw three phase mains c phases.Bridge arm 4 under bridge arm 1, A phases in described A phases, bridge arm 5, C phases under bridge arm 2, B phases in B phases
The structure of bridge arm 6 is identical under upper bridge arm 3 and C phases, is by the failure self-cleaning MMC submodules A and an inductance L1/ of more than 2
L4/L2/L5/L3/L6 is connected in series composition, and each failure self-cleaning MMC submodule A includes：Be sequentially connected in series
One switch K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5, the first switch K1The other end connect
Meet the first electric capacity C1One end, the first switch K1With second switch K2Connected intersection point connects the second electric capacity C respectively2One
End and the 6th diode D6Negative pole, it is described 3rd switch K3With the 4th switch K4Connected intersection point connects the second electric capacity C2's
The other end, the 4th switch K4With the 5th switch K5Connected intersection point connects the first electric capacity C1The other end, it is described 5th switch
K5The other end connect the 6th diode D6Positive pole, the second switch K2With the 3rd switch K3Connected intersection point is formed
The positive pole of failure self-cleaning MMC submodules, the 5th switch K5With the 6th diode D6Connected intersection point forms failure certainly
Remove the negative pole of MMC submodules.
Described first switch K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5Structure is identical,
It is by an all-controlling power electronics device T1/T2/T3/T4/T5A corresponding and diode D1/D2/D3/D4/D5Inverse parallel connects
Connect composition, i.e. the all-controlling power electronics device T1/T2/T3/T4/T5Drain electrode correspondingly connect diode D1/D2/D3/D4/D5
Negative pole, the all-controlling power electronics device T1/T2/T3/T4/T5Source electrode correspondingly connect diode D1/D2/D3/D4/D5's
Positive pole, wherein, first switch K1, second switch K2, the 3rd switch K3With the 4th switch K4It is previous switch K1/K2/K3In
All-controlling power electronics device T1/T2/T3Source electrode and diode D1/D2/D3Positive pole connect next switch K jointly2/K3/
K4In all-controlling power electronics device T2/T3/T4Drain electrode and diode D2/D3/D4Negative pole, and first switch K1In
One all-controlling power electronics device T1Drain electrode and the first diode D1Negative pole jointly connection the first electric capacity C1One end, and
Five switch K5In the 5th all-controlling power electronics device T5Source electrode and the 5th diode D5Positive pole connect one jointly and open
Close i.e. the 4th switch K4In the 4th all-controlling power electronics device T4Source electrode and the 4th diode D4Positive pole, the described 5th
All-controlling power electronics device T5Drain electrode and the 5th diode D5Negative pole jointly connection the 6th diode D6Positive pole, and
Form the negative pole of failure self-cleaning MMC submodules.
Equally, in the transverter with failure self-cleaning MMC submodules of the invention, described full-control type power electronic device
Part T1/T2/T3/T4/T5, it is insulated gate bipolar transistor (IGBT), or integrated gate commutated thyristor (IGCT), OR gate pole can
Cutoff thyristor (GTO), or electron injection enhancement gate transistor (IEGT).
Fig. 3 is in the case where flowing into negative pole outflow from MMC submodules positive pole, and DC line occurs short trouble and (included
Monopolar grounding fault and bipolar short trouble) locking whole switching tube afterwards trigger signal, now MMC submodules electric current is by positive pole
Flow into, negative pole outflow, electric current flows through the second diode D2→ the first diode D1→ the first electric capacity C1→ the five diode D5, therefore
Barrier electric current is the first electric capacity C1Charging.The structure is extended in whole MMC submodules, all switching tubes in block sytem, electricity
Capacitance voltage sum in logical circulation road is more than AC voltage (monopole is phase voltage when being grounded, and is line voltage when bipolar short-circuit)
Absolute value, all diodes will bear backward voltage and end under voltage effect in current path, so as to block electric current to lead to
Road, the self-cleaning of system failure electric current is realized in the presence of it need not disconnect AC breaker.
Fig. 4 be in DC Line Fault electric current from MMC submodules negative pole flow into positive pole outflow in the case of, DC line occur
The trigger signal of short trouble (comprising monopolar grounding fault and bipolar short trouble) locking whole switching tube afterwards, now submodule
Electric current is flowed into by negative pole, positive pole outflow, and electric current is through the 6th diode D6→ the second electric capacity C2→ the three diode D3Flow through, second
Electric capacity C2Charging, the structure is extended in whole MMC submodules, all switching tubes in block sytem, the electricity on current path
Hold voltage sum and be more than AC voltage (monopole is phase voltage when being grounded, and is line voltage when bipolar short-circuit) positive amplitude, electric current
All switching tubes bear backward voltage cut-off in path, current path are blocked, in the presence of it need not disconnect AC breaker
Realize the self-cleaning of system failure electric current.
Claims (6)
1. a kind of failure self-cleaning MMC submodules, it is characterised in that including the first switch (K being sequentially connected in series1), second open
Close (K2), the 3rd switch (K3), the 4th switch (K4) and the 5th switch (K5), the first switch (K1) the other end connection first
Electric capacity (C1) one end, the first switch (K1) and second switch (K2) connected intersection point connects the second electric capacity (C respectively2)
One end and the 6th diode (D6) negative pole, it is described 3rd switch (K3) and the 4th switch (K4) connected intersection point connection second
Electric capacity (C2) the other end, it is described 4th switch (K4) and the 5th switch (K5) connected intersection point connects the first electric capacity (C1) it is another
One end, the 5th switch (K5) the other end connect the 6th diode (D6) positive pole, the second switch (K2) and the
Three switch (K3) connected intersection point forms the positive poles of failure self-cleaning MMC submodules, the 5th switch (K5) and the described 6th 2
Pole pipe (D6) connected intersection point forms the negative poles of failure self-cleaning MMC submodules.
2. failure self-cleaning MMC submodules according to claim 1, it is characterised in that described first switch (K1),
Two switch (K2), the 3rd switch (K3), the 4th switch (K4) and the 5th switch (K5) structure is identical, it is by a full-control type electricity
Power electronic device (T1/T2/T3/T4/T5) a corresponding and diode (D1/D2/D3/D4/D5) inverse parallel connects and composes, i.e. it is described
All-controlling power electronics device (T1/T2/T3/T4/T5) drain electrode correspondingly connect diode (D1/D2/D3/D4/D5) negative pole, institute
State all-controlling power electronics device (T1/T2/T3/T4/T5) source electrode correspondingly connect diode (D1/D2/D3/D4/D5) positive pole,
Wherein, first switch (K1), second switch (K2), the 3rd switch (K3) and the 4th switch (K4) it is previous switch (K1/K2/
K3) in all-controlling power electronics device (T1/T2/T3) source electrode and diode (D1/D2/D3) positive pole connect jointly it is next
Switch (K2/K3/K4) in all-controlling power electronics device (T2/T3/T4) drain electrode and diode (D2/D3/D4) negative pole, and
First switch (K1) in the first all-controlling power electronics device (T1) drain electrode and the first diode (D1) negative pole connect jointly
First electric capacity (C1) one end, and the 5th switch (K5) in the 5th all-controlling power electronics device (T5) source electrode and the five or two
Pole pipe (D5) positive pole connect jointly one switch the i.e. the 4th switch (K4) in the 4th all-controlling power electronics device (T4)
Source electrode and the 4th diode (D4) positive pole, the 5th all-controlling power electronics device (T5) drain electrode and the 5th diode
(D5) negative pole jointly connection the 6th diode (D6) positive pole, and form failure self-cleaning MMC submodules negative pole.
3. failure self-cleaning MMC submodules according to claim 2, it is characterised in that described full-control type power electronic
Device (T1/T2/T3/T4/T5) it is insulated gate bipolar transistor, or integrated gate commutated thyristor, or gate electrode capable of switching off
IGCT, or electron injection enhancement gate transistor.
4. a kind of transverter of the failure self-cleaning MMC submodules with described in claim 1, includes the A phase bridges being in parallel
Arm, B phases bridge arm and C phase bridge arms, described A phase bridge arms are to be connected in series to form by bridge arm (4) under bridge arm (1) in A phases and A phases,
The one end of bridge arm (1) away from bridge arm (4) under A phases connects the positive pole of dc bus in the A phases, and bridge arm (4) is remote under the A phases
One end of bridge arm (1) connects dc bus negative pole in A phases, and bridge arm (1) draws with the intersection point that bridge arm (4) is connected under A phases in the A phases
Go out a phases of three phase mains, described B phase bridge arms are to be connected in series to form by bridge arm (5) under bridge arm (2) in B phases and B phases, the B
The one end of bridge arm (2) away from bridge arm (5) under B phases connects the positive pole of dc bus in phase, and bridge arm (5) is away from B phases under the B phases
One end of bridge arm (2) connects dc bus negative pole, and bridge arm (2) draws three with the intersection point that bridge arm (5) is connected under B phases in the B phases
The b phases of phase power supply, described C phase bridge arms are made up of bridge arm (6) under bridge arm (3) in C phases and C phases, bridge arm (3) in the C phases
Positive pole away from one end connection dc bus of bridge arm (6) under C phases, under the C phases bridge arm (6) away from bridge arm (3) in C phases one
To hold and connect dc bus negative pole, bridge arm (3) draws the c phases of three phase mains with the intersection point that bridge arm (6) is connected under C phases in the C phases,
Characterized in that, bridge arm (4) under bridge arm (1), A phases in described A phases, bridge arm (5) under bridge arm (2), B phases, bridge in C phases in B phases
Arm (3) is identical with bridge arm (6) structure under C phases, is by the failure self-cleaning MMC submodules (A) and an inductance of more than 2
(L1/L4/L2/L5/L3/L6) composition is connected in series, each failure self-cleaning MMC submodules (A) include：The company of being sequentially connected in series
First switch (the K connect1), second switch (K2), the 3rd switch (K3), the 4th switch (K4) and the 5th switch (K5), described first
Switch (K1) the other end connect the first electric capacity (C1) one end, the first switch (K1) and second switch (K2) connected friendship
Point connects the second electric capacity (C respectively2) one end and the 6th diode (D6) negative pole, it is described 3rd switch (K3) opened with the 4th
Close (K4) connected intersection point connects the second electric capacity (C2) the other end, it is described 4th switch (K4) and the 5th switch (K5) be connected
Intersection point connects the first electric capacity (C1) the other end, it is described 5th switch (K5) the other end connect the 6th diode (D6)
Positive pole, the second switch (K2) and the 3rd switch (K3) connected intersection point forms the positive poles of failure self-cleaning MMC submodules, institute
State the 5th switch (K5) and the 6th diode (D6) connected intersection point forms the negative poles of failure self-cleaning MMC submodules.
5. the transverter according to claim 4 with failure self-cleaning MMC submodules, it is characterised in that described
One switch (K1), second switch (K2), the 3rd switch (K3), the 4th switch (K4) and the 5th switch (K5) structure is identical, be by
One all-controlling power electronics device (T1/T2/T3/T4/T5) a corresponding and diode (D1/D2/D3/D4/D5) inverse parallel connection
Form, i.e. the all-controlling power electronics device (T1/T2/T3/T4/T5) drain electrode correspondingly connect diode (D1/D2/D3/D4/
D5) negative pole, the all-controlling power electronics device (T1/T2/T3/T4/T5) source electrode correspondingly connect diode (D1/D2/D3/
D4/D5) positive pole, wherein, first switch (K1), second switch (K2), the 3rd switch (K3) and the 4th switch (K4) it is previous
Individual switch (K1/K2/K3) in all-controlling power electronics device (T1/T2/T3) source electrode and diode (D1/D2/D3) positive pole be total to
With the next switch (K of connection2/K3/K4) in all-controlling power electronics device (T2/T3/T4) drain electrode and diode (D2/D3/
D4) negative pole, and first switch (K1) in all-controlling power electronics device (T1) drain electrode and the first diode (D1) negative pole
The first electric capacity (C of common connection1) one end, and the 5th switch (K5) in the 5th all-controlling power electronics device (T5) source electrode
With the 5th diode (D5) positive pole connect jointly one switch the i.e. the 4th switch (K4) in the 4th full-control type power electronic device
Part (T4) source electrode and the 4th diode (D4) positive pole, the 5th all-controlling power electronics device (T5) drain electrode and the 5th
Diode (D5) negative pole jointly connection the 6th diode (D6) positive pole, and form the negative of failure self-cleaning MMC submodules
Pole.
6. the transverter according to claim 5 with failure self-cleaning MMC submodules, it is characterised in that described is complete
Control type power electronic device (T1/T2/T3/T4/T5) it is insulated gate bipolar transistor, or integrated gate commutated thyristor, or
It is gate level turn-off thyristor, or electron injection enhancement gate transistor.
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| CN110995039A (en) * | 2019-11-25 | 2020-04-10 | 上海交通大学 | Low-loss modular multilevel converter and parameter design method thereof |
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