CN207265894U - Bi-directional failure current blocking MMC submodules and the transverter with the submodule - Google Patents
Bi-directional failure current blocking MMC submodules and the transverter with the submodule Download PDFInfo
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- CN207265894U CN207265894U CN201721087259.XU CN201721087259U CN207265894U CN 207265894 U CN207265894 U CN 207265894U CN 201721087259 U CN201721087259 U CN 201721087259U CN 207265894 U CN207265894 U CN 207265894U
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Abstract
The utility model provides a kind of bi-directional failure current blocking MMC submodules and the transverter with the submodule, and the economy of system is improved by reducing device number or reducing device rated voltage.The bi-directional failure current blocking MMC submodules of the utility model are made of 5 switch elements, 2 capacitors and corresponding conducting wire, wherein each switch element structure is identical, are formed by 1 all-controlling power electronics device and 1 corresponding diode inverse parallel；The transverter with bi-directional failure current blocking MMC submodules of the utility model is made of symmetrical three-phase structure, and the upper and lower bridge arm of each phase is in series by more than 2 bi-directional failure current blocking MMC submodules with inductance.The bi-directional failure current blocking MMC submodules of the utility model and the transverter with the submodule are applied in DC transmission system, can block fault current when monopole short trouble or bipolar short trouble occur for DC side, improve the security of system.
Description
Technical field
It the utility model is related to a kind of MMC submodules.More particularly to a kind of bi-directional failure current blocking MMC submodules and
Transverter with the submodule.
Background technology
Flexible DC transmission technology can not only realize the independent control of active power and reactive power, also be provided simultaneously with easily
In trend upset, construction cost is low, output waveform quality is high the advantages that.The technology can effectively solve the grid-connected problem of new energy,
Realize making full use of for regenerative resource.Suitable for flexible direct current power transmission system transverter mainly have two level, three level and
Modularization multi-level converter (modular multilevel converter, MMC), wherein, MMC is by high pressure resistant, loss
It is small, easy expand, manufacture difficulty is low etc., and advantage is widely applied.
Flexible DC power transmission demonstration project is typically employed in the power transmission mode of underground laying cable and overhead transmission line, no matter adopts
With which kind of power transmission mode, direct-current short circuit failure inevitably occurs, and the overcurrent as caused by DC Line Fault then can be serious
Performance and the service life of MMC devices are influenced, therefore, DC Line Fault is the key issue that MMC systems must solve.
Three kinds of modes of MMC systems generally use remove fault current at present, i.e.,：AC circuit breaker, dc circuit breaker and tool
The MMC submodules topology of standby failure blocking ability.Wherein, AC circuit breaker response time and reboot time are longer, are not suitable for
Instantaneous short-circuit failure.The dc circuit breaker that ABB AB develops can quickly remove DC Line Fault, but the equipment manufacturing cost is higher, will
It is engineered application and also needs further to improve.The defects of in order to overcome breaker, can using, there is DC Line Fault to remove energy
The MMC submodules topology of power, the common submodule topology for possessing fault current blocking ability have full-bridge submodule and clamper pair
Submodule.The switching tube number of full-bridge submodule is twice of half-bridge submodule, and construction cost is big compared with high and running wastage；Clamper
Exportable 3 level of Shuangzi module, device number is less than full-bridge submodule, but still increases during output unit level than half-bridge submodule more
1.5 diodes and 0.5 switching tube are added, and its control is complex.Mixed based on half-bridge submodule and full-bridge submodule
Cascade structure can make MMC possess fault clearance ability and reduce switching tube quantity, but be compared with clamper Shuangzi module, its device
Part number is not obvious to be reduced.Existing the increasing for MMC submodule device numbers for possessing fault current blocking ability brings MMC
Cost is doubled and redoubled, and is unfavorable for the raising of economic benefit.
In view of the above problems, a kind of low MMC submodules for the possessing fault current blocking ability topology of cost is studied, for
The security and economy important in inhibiting of system.
The content of the invention
Technical problem to be solved in the utility model is to provide one kind and can block fault current and can overcome existing
Have bi-directional failure current blocking MMC submodule of the technology due to of high cost caused by device count and electric stress the defects of and
Transverter with the submodule.
Technical solution is used by the utility model：A kind of bi-directional failure current blocking MMC submodules include going here and there successively
Join the first switch K of connection1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5, the first switch K1
The other end connect the first capacitance C1One end, the first switch K1With second switch K2Connected intersection point connects the second capacitance
C2One end, it is described 3rd switch K3With the 4th switch K4Connected intersection point connects the second capacitance C2The other end, the described 4th opens
Close K4With the 5th switch K5Connected intersection point connects the first capacitance C1The other end, it is described 5th switch K5The other end form it is double
The anode of MMC submodules, the second switch K are blocked to fault current2With the 3rd switch K3Connected intersection point forms bi-directional failure
The cathode of current blocking MMC submodules.
The first switch K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5Structure is identical,
It is by an all-controlling power electronics device T1/T2/T3/T4/T5A corresponding and diode D1/D2/D3/D4/D5Inverse parallel connects
Connect composition, i.e. the all-controlling power electronics device T1/T2/T3/T4/T5Drain electrode correspond to connection diode D1/D2/ID3/D4/
D5Anode, the all-controlling power electronics device T1/T2/T3/T4/T5Source electrode correspond to connection diode D1/D2/D3/D4/ID5
Cathode, wherein, first switch K1, second switch K2, the 3rd switch K3With the 4th switch K4It is previous switch K1/K2/K3
In all-controlling power electronics device T1/T2/T3Source electrode and diode D1/D2/D3Cathode connect next switch K jointly2/
K3/K4In all-controlling power electronics device T2/T3/T4Drain electrode and diode D2/D3/D4Anode, and first switch K1In
First all-controlling power electronics device T1Drain electrode and the first diode D1Anode jointly connection the first capacitance C1One end, and
5th switch K5In the 5th all-controlling power electronics device T5Source electrode and the 5th diode D5Cathode connect one jointly
Switch i.e. the 4th switch K4In the 4th all-controlling power electronics device T4Source electrode and the 4th diode D4Cathode, described
Five all-controlling power electronics device T5Drain electrode and the 5th diode D5Anode collectively form bi-directional failure current blocking MMC
The anode of module.
All-controlling power electronics device T described in the utility model1/T2/T3/T4/T5, it is insulated gate bipolar transistor
(IGBT), or integrated gate commutated thyristor (IGCT), OR gate pole cut-off crystal brake tube (GTO), or electron injection enhancement grid are brilliant
Body pipe (IEGT).
The transverter with bi-directional failure current blocking MMC submodules, includes the A phases bridge arm being in parallel, B phases
Bridge arm and C phase bridge arms, the A phase bridge arms are connected in series and are formed by bridge arm in A phases and A phase lower bridge arms, bridge arm in the A phases
The cathode of one end connection dc bus away from A phase lower bridge arms, one end connection of the A phases lower bridge arm away from bridge arm in A phases are straight
Busbar anode is flowed, the intersection point that bridge arm is connected with A phase lower bridge arms in the A phases draws a phases of three phase mains, the B phase bridge arms
It is to be connected in series and formed by bridge arm in B phases and B phase lower bridge arms, one end connection direct current of the bridge arm away from B phase lower bridge arms in the B phases
The cathode of busbar, the one end of the B phases lower bridge arm away from bridge arm in B phases connect dc bus anode, bridge arm and B in the B phases
The intersection point that phase lower bridge arm is connected draws the b phases of three phase mains, and the C phase bridge arms are by bridge arm in C phases and C phase lower bridge arm structures
Into the cathode of one end connection dc bus of the bridge arm away from C phase lower bridge arms in the C phases, the C phases lower bridge arm is away from C phases
One end connection dc bus anode of bridge arm, the intersection point that bridge arm is connected with C phase lower bridge arms in the C phases draw the c of three phase mains
Phase, it is characterised in that bridge arm in the A phases, A phases lower bridge arm, bridge arm in B phases, B phases lower bridge arm, in C phases under bridge arm and C phases
Bridge arm structure is identical, is by the bi-directional failure current blocking MMC submodules and an inductance (L1/L4/L2/L5/ of more than 2
L3/L6 composition) is connected in series, each bi-directional failure current blocking MMC submodule includes：Including be sequentially connected in series
One switch K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5, the first switch K1The other end connect
Meet the first capacitance C1One end, the first switch K1With second switch K2Connected intersection point connects the second capacitance C2One end, institute
State the 3rd switch K3With the 4th switch K4Connected intersection point connects the second capacitance C2The other end, it is described 4th switch K4With the 5th
Switch K5Connected intersection point connects the first capacitance C1The other end, it is described 5th switch K5The other end form bi-directional failure electric current
Block the anode of MMC submodules, the second switch K2With the 3rd switch K3Connected intersection point forms bi-directional failure current blocking
The cathode of MMC submodules.
The first switch K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5Structure is identical,
It is by an all-controlling power electronics device T1/T2/T3/T4/T5A corresponding and diode D1/D2/D3/D4/D5Inverse parallel connects
Connect composition, i.e. the all-controlling power electronics device T1/T2/T3/T4/T5Drain electrode correspond to connection diode D1/D2/D3/D4/D5
Anode, the all-controlling power electronics device T1/T2/T3/T4/T5Source electrode correspond to connection diode D1/D2/D3/D4/D5's
Cathode, wherein, first switch K1, second switch K2, the 3rd switch K3With the 4th switch K4It is previous switch K1/K2/K3In
All-controlling power electronics device T1/T2/T3Source electrode and diode D1/D2/D3Cathode connect next switch K jointly2/K3/
K4In all-controlling power electronics device T2/T3/T4Drain electrode and diode D2/D3/D4Anode, and first switch K1In
One all-controlling power electronics device T1Drain electrode and the first diode D1Anode jointly connection the first capacitance C1One end, and
Five switch K5In the 5th all-controlling power electronics device T5Source electrode and the 5th diode D5Cathode connect one jointly and open
Close i.e. the 4th switch K4In the 4th all-controlling power electronics device T4Source electrode and the 4th diode D4Cathode, the described 5th
All-controlling power electronics device T5Drain electrode and the 5th diode D5Anode collectively form bi-directional failure current blocking MMC submodules
The anode of block.
Equally, in the transverter with bi-directional failure current blocking MMC submodules of the utility model, the full-control type
Power electronic devices T1/T2/T3/T4/T5, it is insulated gate bipolar transistor (IGBT), or integrated gate commutated thyristor
(IGCT), OR gate pole cut-off crystal brake tube (GTO), or electron injection enhancement gate transistor (IEGT).
The bi-directional failure current blocking MMC submodules of the utility model and the transverter with the submodule, pass through introducing
Extra power electronic devices directly or indirectly blocks direct fault current, and can reduce the rated voltage of power electronic devices
Or number of devices, so as to reduce investment raising system overall economy quality.The bi-directional failure current blocking MMC submodules of the utility model
Block and the transverter with the submodule, when using the switching tube of same nominal voltage, submodule number is only full-bridge submodule
The half of block, device total number be only its 5/8, under the program the utility model by reduce device number reduce build into
This.In the case of using identical submodule number, using the utility model bi-directional failure current blocking MMC submodules, its is defeated
Go out level number and be more than full-bridge submodule, harmonic wave of output voltage content is low, and switching device rated voltage is bridge-type submodule one
Half, the requirement to switching device is reduced, holistic cost has larger reduction.To sum up, under two schemes, MMC construction costs have
Declined.
Brief description of the drawings
Fig. 1 is the schematic diagram of the utility model bi-directional failure current blocking MMC submodules；
Fig. 2 is the composition block diagram for the transverter that the utility model has bi-directional failure current blocking MMC submodules；
Fig. 3 is that electric current flows into MMC submodule current paths when anode flows out from MMC submodules cathode in DC Line Fault；
Fig. 4 is that electric current flows into MMC submodule current paths when cathode flows out from MMC submodules anode in DC Line Fault.
In figure
1：Bridge arm 2 in A phases：Bridge arm in B phases
3：Bridge arm 4 in C phases：A phase lower bridge arms
5：B phases lower bridge arm 6：C phase lower bridge arms
Embodiment
To a kind of bi-directional failure current blocking MMC submodules of the utility model and have with reference to embodiment and attached drawing
The transverter of the submodule is described in detail.
As shown in Figure 1, a kind of bi-directional failure current blocking MMC submodules of the utility model, include the company of being sequentially connected in series
The first switch K connect1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5, the first switch K1It is another
One end connects the first capacitance C1One end, the first switch K1With second switch K2Connected intersection point connects the second capacitance C2's
One end, the 3rd switch K3With the 4th switch K4Connected intersection point connects the second capacitance C2The other end, it is described 4th switch K4
With the 5th switch K5Connected intersection point connects the first capacitance C1The other end, it is described 5th switch K5The other end form it is two-way therefore
Hinder the anode of current blocking MMC submodules, the second switch K2With the 3rd switch K3Connected intersection point forms bi-directional failure electric current
Block the cathode of MMC submodules.
The first switch K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5Structure is identical,
It is by an all-controlling power electronics device T1/T2/T3/T4/T5A corresponding and diode D1/D2/D3/D4/D5Inverse parallel connects
Connect composition, i.e. the all-controlling power electronics device T1/T2/T3/T4/T5Drain electrode correspond to connection diode D1/D2/D3/D4/D5
Anode, the all-controlling power electronics device T1/T2/T3/T4/T5Source electrode correspond to connection diode D1/D2/D3/D4/D5's
Cathode, wherein, first switch K1, second switch K2, the 3rd switch K3With the 4th switch K4It is previous switch K1/K2/K3In
All-controlling power electronics device T1/T2/T3Source electrode and diode D1/D2/D3Cathode connect next switch K jointly2/K3/
K4In all-controlling power electronics device T2/T3/T4Drain electrode and diode D2/D3/D4Anode, and first switch K1In
One all-controlling power electronics device T1Drain electrode and the first diode D1Anode jointly connection the first capacitance C1One end, and
Five switch K5In the 5th all-controlling power electronics device T5Source electrode and the 5th diode D5Cathode connect one jointly and open
Close i.e. the 4th switch K4In the 4th all-controlling power electronics device T4Source electrode and the 4th diode D4Cathode, the described 5th
All-controlling power electronics device T5Drain electrode and the 5th diode D5Anode collectively form bi-directional failure current blocking MMC submodules
The anode of block.
All-controlling power electronics device T described in the utility model1/T2/T3/T4/T5, it is insulated gate bipolar transistor
(IGBT), or integrated gate commutated thyristor (IGCT), OR gate pole cut-off crystal brake tube (GTO), or electron injection enhancement grid are brilliant
Body pipe (IEGT).
A kind of bi-directional failure current blocking MMC submodules of the utility model, make MMC submodule topologys possess failure blocking
The key of ability is the 5th all-controlling power electronics device T5, the 5th diode D5Link position and connection mode.In system
During generation DC Line Fault, all switching tube signals of locking, MMC submodules are under diode action, in MMC submodule electric currents by just
MMC the first capacitances of submodule C is introduced when pole flows into current path1Voltage suppress line voltage, two in current path
Pole pipe will be forced closed under backward voltage effect, straight by anti-paralleled diode when MMC submodule electric currents are flowed into by anode
Connect and block current path to achieve the purpose that to remove fault current.
During normal work, the first capacitance C1Both end voltage is the second capacitance C2Twice of terminal voltage, i.e. UC1=2UC2=2U；
First all-controlling power electronics device T1With the 4th all-controlling power electronics device T4, the second all-controlling power electronics device T2With
3rd all-controlling power electronics device T3Using the logical triggering signal of complementary conducting, i.e. the first full-control type power electronic device
Part T14th all-controlling power electronics device T when opening4Shut-off, the second all-controlling power electronics device T23rd full control when opening
Type power electronic devices T3Shut-off, the first all-controlling power electronics device T1With the second all-controlling power electronics device T2Logic
Signal is not interfere with each other, with the first all-controlling power electronics device T1~the four all-controlling power electronics device T4Antiparallel two pole
Pipe turns in turn according to MMC submodules input voltage；5th all-controlling power electronics device T5It is independent to trigger logical signal, normally
Trigger signal is always 1 during work.Under the operating mode, the combination of switching tube difference pulse signal makes module export 0, U, 2U tri-
Level voltage.
As shown in Fig. 2, the transverter with bi-directional failure current blocking MMC submodules of the utility model, includes phase
A phases bridge arm, B phases bridge arm and C phase bridge arms in parallel, the A phase bridge arms are by 4 company of series connection of bridge arm 1 in A phases and A phases lower bridge arm
Connect composition, the cathode of one end connection dc bus of the bridge arm 1 away from A phases lower bridge arm 4, the A phases lower bridge arm 4 are remote in the A phases
From one end connection dc bus anode of bridge arm 1 in A phases, the intersection point that bridge arm 1 is connected with A phases lower bridge arm 4 in the A phases draws three
The a phases of phase power supply, the B phase bridge arms are connected in series and are formed by bridge arm 2 in B phases and B phases lower bridge arm 5, bridge arm in the B phases
The cathode of 2 one end connection dc bus away from B phases lower bridge arm 5, the one end of the B phases lower bridge arm 5 away from bridge arm 2 in B phases connects
Connect dc bus anode, the intersection point that bridge arm 2 is connected with B phases lower bridge arm 5 in the B phases draws the b phases of three phase mains, the C
Phase bridge arm is made of bridge arm 3 in C phases and C phases lower bridge arm 6, and one end connection of the bridge arm 3 away from C phases lower bridge arm 6 is straight in the C phases
The cathode of busbar is flowed, the one end of the C phases lower bridge arm 6 away from bridge arm 3 in C phases connects dc bus anode, bridge arm in the C phases
3 intersection points being connected with C phases lower bridge arm 6 draw the c phases of three phase mains.Bridge arm 1 in the A phases, A phases lower bridge arm 4, bridge in B phases
Arm 2, B phases lower bridge arm 5, bridge arm 3 and C phases 6 structures of lower bridge arm are identical in C phases, are by the bi-directional failure current blocking of more than 2
MMC submodules A and an inductance L1/L4/L2/L5/L3/L6 are connected in series composition, each bi-directional failure current blocking MMC
Module includes：Including the first switch K being sequentially connected in series1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th
Switch K5, the first switch K1The other end connect the first capacitance C1One end, the first switch K1With second switch K2Phase
Intersection point even connects the second capacitance C2One end, it is described 3rd switch K3With the 4th switch K4Connected intersection point connects the second capacitance
C2The other end, it is described 4th switch K4With the 5th switch K5Connected intersection point connects the first capacitance C1The other end, the described 5th
Switch K5The other end form bi-directional failure current blocking MMC submodules anode, the second switch K2With the 3rd switch K3Phase
Intersection point even forms the cathode of bi-directional failure current blocking MMC submodules.
The first switch K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5Structure is identical,
It is by an all-controlling power electronics device T1/T2/T3/T4/T5A corresponding and diode D1/D2/D3/D4/D5Inverse parallel connects
Connect composition, i.e. the all-controlling power electronics device T1/T2/T3/T4/T5Drain electrode correspond to connection diode D1/D2/D3/D4/
ID5Anode, the all-controlling power electronics device T1/T2/T3/T4/T5Source electrode correspond to connection diode D1/D2/D3/D4/D5
Cathode, wherein, first switch K1, second switch K2, the 3rd switch K3With the 4th switch K4It is previous switch K1/K2/K3
In all-controlling power electronics device T1/T2/T3Source electrode and diode D1/D2/D3Cathode connect next switch K jointly2/
K3/K4In all-controlling power electronics device T2/T3/T4Drain electrode and diode D2/D3/D4Anode, and first switch K1In
First all-controlling power electronics device T1Drain electrode and the first diode D1Anode jointly connection the first capacitance C1One end, and
5th switch K5In the 5th all-controlling power electronics device T5Source electrode and the 5th diode D5Cathode connect one jointly
Switch i.e. the 4th switch K4In the 4th all-controlling power electronics device T4Source electrode and the 4th diode D4Cathode, described
Five all-controlling power electronics device T5Drain electrode and the 5th diode D5Anode collectively form bi-directional failure current blocking MMC
The anode of module.
Equally, in the transverter with bi-directional failure current blocking MMC submodules of the utility model, the full-control type
Power electronic devices T1/T2/T3/K4/T5, it is insulated gate bipolar transistor (IGBT), or integrated gate commutated thyristor
(IGCT), OR gate pole cut-off crystal brake tube (GTO), or electron injection enhancement gate transistor (IEGT).
Fig. 3 is in the case where flowing into anode outflow from MMC submodules cathode, and DC line occurs short trouble and (includes
Monopolar grounding fault and bipolar short trouble) locking whole switching tube afterwards trigger signal, MMC submodules electric current is by cathode at this time
Flow into, anode outflow, electric current flows through the second diode D2→ the first diode D1→ the first capacitance C1→ the five diode D5, therefore
Barrier electric current is the first capacitance C1Charging.The structure is extended in whole MMC submodules, all switching tubes in block sytem, electricity
The sum of capacitance voltage in logical circulation road is more than exchange side voltage (monopole is phase voltage when being grounded, and is line voltage when bipolar short-circuit)
Absolute value, all diodes will bear backward voltage and end under voltage effect in current path, so as to block electric current to lead to
Road, blocks the fault current of system under the action of it need not disconnect exchange side breaker.
Fig. 4 for DC line generation short trouble (including monopolar grounding fault and bipolar short trouble), all open afterwards by locking
The current path of the trigger signal of pipe is closed, after submodule electric current is flowed into by anode, because of D in submodule5And D4Opposite direction connection, circuit
Middle no current path exists, and fault current is blocked immediately.
Claims (6)
1. a kind of bi-directional failure current blocking MMC submodules, it is characterised in that including the first switch (K being sequentially connected in series1)、
Second switch (K2), the 3rd switch (K3), the 4th switch (K4) and the 5th switch (K5), the first switch (K1) the other end connect
Meet the first capacitance (C1) one end, the first switch (K1) and second switch (K2) connected intersection point connects the second capacitance (C2)
One end, it is described 3rd switch (K3) and the 4th switch (K4) connected intersection point connects the second capacitance (C2) the other end, described
Four switch (K4) and the 5th switch (K5) connected intersection point connects the first capacitance (C1) the other end, it is described 5th switch (K5)
The other end forms the anode of bi-directional failure current blocking MMC submodules, the second switch (K2) and the 3rd switch (K3) be connected
Intersection point forms the cathode of bi-directional failure current blocking MMC submodules.
2. bi-directional failure current blocking MMC submodules according to claim 1, it is characterised in that the first switch
(K1), second switch (K2), the 3rd switch (K3), the 4th switch (K4) and the 5th switch (K5) structure is identical, it is complete by one
Control type power electronic device (T1/T2/T3/T4/T5) a corresponding and diode (D1/D2/D3/D4/D5) inverse parallel connects and composes,
That is, described all-controlling power electronics device (T1/T2/T3/T4/T5) drain electrode correspond to connection diode (D1/D2/D3/D4/D5)
Anode, the all-controlling power electronics device (T1/T2/T3/T4/T5) source electrode correspond to connection diode (D1/D2/D3/D4/D5)
Cathode, wherein, first switch (K1), second switch (K2), the 3rd switch (K3) and the 4th switch (K4) it is previous switch
(K1/K2/K3) in all-controlling power electronics device (T1/T2/T3) source electrode and diode (D1/D2/D3) cathode connect jointly
Next switch (K2/K3/K4) in all-controlling power electronics device (T2/T3/T4) drain electrode and diode (D2/D3/D4) it is negative
Pole, and first switch (K1) in the first all-controlling power electronics device (T1) drain electrode and the first diode (D1) anode be total to
With the first capacitance (C of connection1) one end, and the 5th switch (K5) in the 5th all-controlling power electronics device (T5) source electrode and
5th diode (D5) cathode connect jointly one switch the i.e. the 4th switch (K4) in the 4th all-controlling power electronics device
(T4) source electrode and the 4th diode (D4) cathode, the 5th all-controlling power electronics device (T5) drain electrode and the five or two
Pole pipe (D5) anode collectively form the anode of bi-directional failure current blocking MMC submodules.
3. bi-directional failure current blocking MMC submodules according to claim 2, it is characterised in that the full-control type electricity
Power electronic device (T1/T2/T3/T4/T5) it is insulated gate bipolar transistor, or integrated gate commutated thyristor, or gate pole
Turn-off thyristor, or electron injection enhancement gate transistor.
4. a kind of transverter of the bi-directional failure current blocking MMC submodules with described in claim 1, includes what is be in parallel
A phases bridge arm, B phases bridge arm and C phase bridge arms, the A phase bridge arms are connected in series by bridge arm (1) in A phases and A phases lower bridge arm (4)
Form, the cathode of one end connection dc bus of the bridge arm (1) away from A phases lower bridge arm (4), the A phases lower bridge arm in the A phases
(4) one end away from bridge arm (1) in A phases connects dc bus anode, and bridge arm (1) is connected with A phases lower bridge arm (4) in the A phases
Intersection point draw three phase mains a phases, the B phase bridge arms are to be connected in series structure by bridge arm (2) in B phases and B phases lower bridge arm (5)
Into the cathode of one end connection dc bus of the bridge arm (2) away from B phases lower bridge arm (5), the B phases lower bridge arm (5) in the B phases
One end connection dc bus anode away from bridge arm (2) in B phases, the friendship that bridge arm (2) is connected with B phases lower bridge arm (5) in the B phases
Point draws the b phases of three phase mains, and the C phase bridge arms are made of bridge arm (3) in C phases and C phases lower bridge arm (6), in the C phases
The cathode of one end connection dc bus of the bridge arm (3) away from C phases lower bridge arm (6), the C phases lower bridge arm (6) is away from bridge arm in C phases
(3) one end connection dc bus anode, the intersection point extraction three-phase electricity that bridge arm (3) is connected with C phases lower bridge arm (6) in the C phases
The c phases in source, it is characterised in that bridge arm (1) in the A phases, A phases lower bridge arm (4), bridge arm (2) in B phases, B phases lower bridge arm (5),
Bridge arm (3) is identical with C phases lower bridge arm (6) structure in C phases, is by the bi-directional failure current blocking MMC submodules of more than 2
(A) and an inductance (L1/L4/L2/L5/L3/L6) is connected in series composition, each bi-directional failure current blocking MMC submodule
(A) include：Including the first switch (K being sequentially connected in series1), second switch (K2), the 3rd switch (K3), the 4th switch
(K4) and the 5th switch (K5), the first switch (K1) the other end connect the first capacitance (C1) one end, the first switch
(K1) and second switch (K2) connected intersection point connects the second capacitance (C2) one end, it is described 3rd switch (K3) switched with the 4th
(K4) connected intersection point connects the second capacitance (C2) the other end, it is described 4th switch (K4) and the 5th switch (K5) connected friendship
The first capacitance (C of point connection1) the other end, it is described 5th switch (K5) the other end form bi-directional failure current blocking MMC submodules
The anode of block, the second switch (K2) and the 3rd switch (K3) connected intersection point forms bi-directional failure current blocking MMC submodules
Cathode.
5. the transverter according to claim 4 with bi-directional failure current blocking MMC submodules, it is characterised in that institute
First switch (the K stated1), second switch (K2), the 3rd switch (K3), the 4th switch (K4) and the 5th switch (K5) structure is identical,
It is by an all-controlling power electronics device (T1/T2/T3/T4/T5) a corresponding and diode (D1/D2/D3/D4/D5) it is anti-simultaneously
Connection connects and composes, i.e. the all-controlling power electronics device (T1/T2/T3/T4/T5) drain electrode correspond to connection diode (D1/D2/
D3/D4/D5) anode, the all-controlling power electronics device (T1/T2/T3/T4/T5) source electrode correspond to connection diode (D1/
D2/D3/D4/D5) cathode, wherein, first switch (K1), second switch (K2), the 3rd switch (K3) and the 4th switch (K4) be
Previous switch (K1/K2/K3) in all-controlling power electronics device (T1/T2/T3) source electrode and diode (D1/D2/D3) just
Next switch (K is extremely connected jointly2/K3/K4) in all-controlling power electronics device (T2/T3/T4) drain electrode and diode
(D2/D3/D4) anode, and first switch (K1) in the first all-controlling power electronics device (T1) drain electrode and the first diode
(D1) anode jointly connection the first capacitance (C1) one end, and the 5th switch (K5) in the 5th all-controlling power electronics device
(T5) source electrode and the 5th diode (D5) cathode connect jointly one switch the i.e. the 4th switch (K4) in the 4th full-control type
Power electronic devices (T4) source electrode and the 4th diode (D4) cathode, the 5th all-controlling power electronics device (T5)
Drain electrode and the 5th diode (D5) anode collectively form the anode of bi-directional failure current blocking MMC submodules.
6. the transverter according to claim 5 with bi-directional failure current blocking MMC submodules, it is characterised in that institute
All-controlling power electronics device (the T stated1/T2/T3/T4/T5) it is insulated gate bipolar transistor, or integrated gate commutated brilliant lock
Pipe, or gate level turn-off thyristor, or electron injection enhancement gate transistor.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110994974A (en) * | 2019-11-25 | 2020-04-10 | 上海交通大学 | Low-loss modular multi-level direct current-direct current converter and submodule thereof |
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2017
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110994974A (en) * | 2019-11-25 | 2020-04-10 | 上海交通大学 | Low-loss modular multi-level direct current-direct current converter and submodule thereof |
| CN110994974B (en) * | 2019-11-25 | 2020-11-20 | 上海交通大学 | Low-loss modular multi-level direct current-direct current converter and submodule thereof |
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