CN107370406A - The level MMC submodules of failure self-cleaning three and the transverter with the submodule - Google Patents
The level MMC submodules of failure self-cleaning three and the transverter with the submodule Download PDFInfo
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- CN107370406A CN107370406A CN201710753770.7A CN201710753770A CN107370406A CN 107370406 A CN107370406 A CN 107370406A CN 201710753770 A CN201710753770 A CN 201710753770A CN 107370406 A CN107370406 A CN 107370406A
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- switch
- phases
- bridge arm
- cleaning
- diode
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
Abstract
The present invention provides a kind of level MMC submodules of failure self-cleaning three and the transverter with the submodule, and the economy of system is improved by reducing device number or reducing device rated voltage.The level MMC submodules of failure self-cleaning three of the present invention are by 5 switch elements, 2 capacitors and corresponding wire are formed, exportable three level altogether, the structure of 5 switch elements is identical in submodule, is made up of 1 all-controlling power electronics device and 1 corresponding diode inverse parallel；The converter structure with the level MMC submodules of failure self-cleaning three of the present invention is symmetrical three-phase structure, and the upper and lower bridge arm of each phase is in series by the level MMC submodules of failure self-cleaning three of more than 2 with inductance.The level MMC submodules of failure self-cleaning three of the present invention and the transverter with the submodule are applied in flexible direct current power transmission system, the self-cleaning of fault current can be quickly realized when monopole short trouble or bipolar short trouble occur for DC side, improves the security of system.
Description
Technical field
The present invention relates to a kind of MMC submodules.More particularly to a kind of level MMC submodules of failure self-cleaning three and have
The transverter of the submodule.
Background technology
Technology of HVDC based Voltage Source Converter can not only realize the independent control of active power and reactive power, also be provided simultaneously with easily
In trend upset, construction cost is low, output waveform quality is high the advantages that.The technology can effectively solve the grid-connected problem of new energy,
Realize making full use of for regenerative resource.Suitable for flexible direct current power transmission system transverter mainly have two level, three level and
Modularization multi-level converter (modular multilevel converter, MMC), wherein, MMC is by high pressure resistant, loss
It is small, easy expand, manufacture difficulty is low etc., and advantage is widely applied.
Flexible DC power transmission demonstration project is typically employed in the power transmission mode of underground laying cable and overhead transmission line, no matter adopts
With which kind of power transmission mode, direct-current short circuit failure inevitably occurs, and the overcurrent as caused by DC Line Fault then can be serious
Performance and the life-span of MMC devices are had influence on, therefore, DC Line Fault is the key issue that MMC systems must solve.
Three kinds of modes of MMC systems generally use remove fault current at present, i.e.,：AC circuit breaker, dc circuit breaker and tool
The MMC submodules topology of standby failure blocking ability.Wherein, AC circuit breaker response time and reboot time are longer, are not suitable for
Instantaneous short-circuit failure.The dc circuit breaker that ABB AB develops can quickly remove DC Line Fault, but the equipment manufacturing cost is higher, will
It is engineered application and also needs further to improve.The defects of in order to overcome breaker, can using, there is DC Line Fault to remove energy
The MMC submodules topology of power, traditional half-bridge submodule are common because diode continuousing flow effect can not actively remove fault current
Possessing the submodule topology of fault clearance ability has full-bridge submodule and clamper Shuangzi module.Full-bridge submodule switching tube number is
Twice of half-bridge submodule, construction cost are far above half-bridge submodule, and running wastage is larger；Exportable 3 electricity of clamper Shuangzi module
Flat, the structure devices number is less than full-bridge submodule, but still increases 1.5 diodes and 0.5 switching tube than half-bridge submodule more,
And its control is complex.MMC can be made to possess fault clearance based on half-bridge submodule and full-bridge submodule Mixed cascading structure
Ability simultaneously reduces switching tube quantity, but is compared with clamper Shuangzi module, and its device number is not obvious to be reduced.Device number
Increase and bring being doubled and redoubled for MMC costs, be unfavorable for the raising of economic benefit.
In view of the above problems, a kind of low MMC submodules for the possessing DC Line Fault Scavenging activity topology of cost is studied, for
Improve the economy important in inhibiting of flexible DC power transmission.
The content of the invention
It can overcome while fault current self-cleaning is realized the technical problem to be solved by the invention is to provide one kind
Level MMC submodules of failure self-cleaning three due to the cost caused by device count and electric stress is high the defects of and with should
The transverter of submodule.
The technical solution adopted in the present invention is：A kind of level MMC submodules of failure self-cleaning three include the company of being sequentially connected in series
The first switch K connect1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5, the first switch K1It is another
One end connects the first electric capacity C1One end, the first switch K1With second switch K2Connected intersection point connects the second electric capacity C2's
One end, the 3rd switch K3With the 4th switch K4Connected intersection point connects the second electric capacity C2The other end, it is described 4th switch K4
With the 5th switch K5Connected intersection point connects the first electric capacity C1The other end, it is described 5th switch K5The other end form failure from
Remove the negative pole of three level MMC submodules, the second switch K2With the 3rd switch K3Connected intersection point forms failure self-cleaning three
The positive pole of level MMC submodules.
Described first switch K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5Structure is identical,
It is by an all-controlling power electronics device T1/T2/T3/T4/T5A corresponding and diode D1/D2/D3/D4/D5Inverse parallel connects
Connect composition, i.e. the all-controlling power electronics device T1/T2/T3/T4/T5Drain electrode correspondingly connect diode D1/D2/D3/D4/D5
Negative pole, the all-controlling power electronics device T1/T2/T3/T4/T5Source electrode correspondingly connect diode D1/D2/D3/D4/D5's
Positive pole, wherein, first switch K1, second switch K2, the 3rd switch K3With the 4th switch K4It is previous switch K1/K2/K3In
All-controlling power electronics device T1/T2/T3Source electrode and diode D1/D2/D3Positive pole connect next switch K jointly2/K3/
K4In all-controlling power electronics device T2/T3/T4Drain electrode and diode D2/D3/D4Negative pole, and first switch K1In
One all-controlling power electronics device T1Drain electrode and the first diode D1Negative pole jointly connection the first electric capacity C1One end, and
Five switch K5In the 5th all-controlling power electronics device T5Source electrode and the 5th diode D5Positive pole connect one jointly and open
Close i.e. the 4th switch K4In the 4th all-controlling power electronics device T4Source electrode and the 4th diode D4Positive pole, the described 5th
All-controlling power electronics device T5Drain electrode and the 5th diode D5Negative pole collectively form the level MMC submodules of failure self-cleaning three
The negative pole of block.
Heretofore described all-controlling power electronics device T1/T2/T3/T4/T5, it is insulated gate bipolar transistor
(IGBT), or integrated gate commutated thyristor (IGCT), OR gate pole cut-off crystal brake tube (GTO), or electron injection enhancement grid are brilliant
Body pipe (IEGT).
The described transverter with the level MMC submodules of failure self-cleaning three, includes the A phases bridge arm being in parallel, B phases
Bridge arm and C phase bridge arms, described A phase bridge arms are to be connected in series to form by bridge arm under bridge arm in A phases and A phases, bridge arm in the A phases
One end away from bridge arm under A phases connects the positive pole of dc bus, and one end connection of the bridge arm away from bridge arm in A phases is straight under the A phases
Bus negative pole is flowed, a phases for the intersection point extraction three phase mains that bridge arm is connected with bridge arm under A phases in the A phases, described B phase bridge arms
It is to be connected in series to form by bridge arm under bridge arm in B phases and B phases, the one end of bridge arm away from bridge arm under B phases connects direct current in the B phases
The positive pole of bus, the one end of bridge arm away from bridge arm in B phases connects dc bus negative pole under the B phases, bridge arm and B in the B phases
The connected intersection point of bridge arm draws the b phases of three phase mains under phase, and described C phase bridge arms are by bridge arm structure under bridge arm in C phases and C phases
Into the one end of bridge arm away from bridge arm under C phases connects the positive pole of dc bus in the C phases, and bridge arm is away from C phases under the C phases
One end connection dc bus negative pole of bridge arm, the c for the intersection point extraction three phase mains that bridge arm is connected with bridge arm under C phases in the C phases
Phase, it is characterised in that bridge arm under bridge arm, A phases in described A phases, bridge arm under bridge arm, B phases in B phases, in C phases under bridge arm and C phases
Bridge arm structure is identical, is by the level MMC submodules of failure self-cleaning three and an inductance (L1/L4/L2/L5/ of more than 2
L3/L6 composition) is connected in series, each level MMC submodule of failure self-cleaning three includes：Including be sequentially connected in series
One switch K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5, the first switch K1The other end connect
Meet the first electric capacity C1One end, the first switch K1With second switch K2Connected intersection point connects the second electric capacity C2One end, institute
State the 3rd switch K3With the 4th switch K4Connected intersection point connects the second electric capacity C2The other end, it is described 4th switch K4With the 5th
Switch K5Connected intersection point connects the first electric capacity C1The other end, it is described 5th switch K5The other end form failure self-cleaning three
The negative pole of level MMC submodules, the second switch K2With the 3rd switch K3Connected intersection point forms the level of failure self-cleaning three
The positive pole of MMC submodules.
Described first switch K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5Structure is identical,
It is by an all-controlling power electronics device T1/T2/T3/T4/T5A corresponding and diode D1/D2/D3/D4/D5Inverse parallel connects
Connect composition, i.e. the all-controlling power electronics device T1/T2/T3/T4/T5Drain electrode correspondingly connect diode D1/D2/D3/D4/
1D5Negative pole, the all-controlling power electronics device T1/T2/T3/T4/T5Source electrode correspondingly connect diode D1/D2/D3/D4/D5
Positive pole, wherein, first switch K1, second switch K2, the 3rd switch K3With the 4th switch K4It is previous switch K1/K2/K3
In all-controlling power electronics device T1/T2/T3Source electrode and diode D1/D2/D3Positive pole connect next switch K jointly2/
K3/K4In all-controlling power electronics device T2/T3/T4Drain electrode and diode D2/D3/D4Negative pole, and first switch K1In
First all-controlling power electronics device T1Drain electrode and the first diode D1Negative pole jointly connection the first electric capacity C1One end, and
5th switch K5In the 5th all-controlling power electronics device T5Source electrode and the 5th diode D5Positive pole connect one jointly
Switch i.e. the 4th switch K4In the 4th all-controlling power electronics device T4Source electrode and the 4th diode D4Positive pole, described
Five all-controlling power electronics device T5Drain electrode and the 5th diode D5Negative pole collectively form level MMC of failure self-cleaning three
The negative pole of module.
Equally, in the transverter with the level MMC submodules of failure self-cleaning three of the invention, described full-control type electricity
Power electronic device T1/T2/T3/T4/T5, it is insulated gate bipolar transistor (IGBT), or integrated gate commutated thyristor (IGCT),
OR gate pole cut-off crystal brake tube (GTO), or electron injection enhancement gate transistor (IEGT).
The level MMC submodules of failure self-cleaning three of the present invention and the transverter with the submodule, it is extra by introducing
Power electronic devices directly or indirectly block direct fault current, and the rated voltage or device of power electronic devices can be reduced
Number of packages amount, so as to reduce investment raising system overall economy quality.The present invention the level MMC submodules of failure self-cleaning three and have
The transverter of the submodule, when using the switching tube of same nominal voltage, submodule number is only the half of full-bridge submodule,
Device total number is only the 5/8 of the latter, and the present invention is reducingd the construction costs by reducing device number under the program.Using phase
In the case of with submodule number, using the level MMC submodules of failure self-cleaning three of the present invention, its output level number is more than complete
Bridge submodule, harmonic wave of output voltage content is low, meanwhile, submodule switching device rated voltage is bridge-type submodule half, drop
The low requirement to switching device, holistic cost have larger reduction.To sum up, under two schemes, MMC construction costs under
Drop.
Brief description of the drawings
Fig. 1 is the schematic diagram of the level MMC submodules of failure self-cleaning three of the present invention；
Fig. 2 is the composition block diagram for the transverter that the present invention has the level MMC submodules of failure self-cleaning three；
Fig. 3 is that electric current flows into MMC submodule current paths when negative pole flows out from MMC submodules positive pole in DC Line Fault；
Fig. 4 is that electric current flows into MMC submodule current paths when positive pole flows out from MMC submodules negative pole in DC Line Fault.
In figure
1：Bridge arm 2 in A phases：Bridge arm in B phases
3：Bridge arm 4 in C phases：Bridge arm under A phases
5：Bridge arm 6 under B phases：Bridge arm under C phases
Embodiment
To the level MMC submodules of a kind of failure self-cleaning three of the invention and there is the son with reference to embodiment and accompanying drawing
The transverter of module is described in detail.
As shown in figure 1, a kind of level MMC submodules of failure self-cleaning three of the present invention, including the be sequentially connected in series
One switch K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5, the first switch K1The other end connect
Meet the first electric capacity C1One end, the first switch K1With second switch K2Connected intersection point connects the second electric capacity C2One end, institute
State the 3rd switch K3With the 4th switch K4Connected intersection point connects the second electric capacity C2The other end, it is described 4th switch K4With the 5th
Switch K5Connected intersection point connects the first electric capacity C1The other end, it is described 5th switch K5The other end form failure self-cleaning three
The negative pole of level MMC submodules, the second switch K2With the 3rd switch K3Connected intersection point forms the level of failure self-cleaning three
The positive pole of MMC submodules.
Described first switch K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5Structure is identical,
It is by an all-controlling power electronics device T1/T2/T3/T4/T5A corresponding and diode D1/D2/D3/D4/D5Inverse parallel connects
Connect composition, i.e. the all-controlling power electronics device T1/T2/T3/T4/T5Drain electrode correspondingly connect diode D1/D2/D3/D4/D5
Negative pole, the all-controlling power electronics device T1/T2/T3/T4/T5Source electrode correspondingly connect diode D1/D2/D3/D4/D5's
Positive pole, wherein, first switch K1, second switch K2, the 3rd switch K3With the 4th switch K4It is previous switch K1/K2/K3In
All-controlling power electronics device T1/T2/T3Source electrode and diode D1/D2/D3Positive pole connect next switch K jointly2/K3/
K4In all-controlling power electronics device T2/T3/T4Drain electrode and diode D2/D3/D4Negative pole, and first switch K1In
One all-controlling power electronics device T1Drain electrode and the first diode D1Negative pole jointly connection the first electric capacity C1One end, and
Five switch K5In the 5th all-controlling power electronics device T5Source electrode and the 5th diode D5Positive pole connect one jointly and open
Close i.e. the 4th switch K4In the 4th all-controlling power electronics device T4Source electrode and the 4th diode D4Positive pole, the described 5th
All-controlling power electronics device T5Drain electrode and the 5th diode D5Negative pole collectively form the level MMC submodules of failure self-cleaning three
The negative pole of block.
Heretofore described all-controlling power electronics device T1/T2/T3/T4/T5, it is insulated gate bipolar transistor
(IGBT), or integrated gate commutated thyristor (IGCT), OR gate pole cut-off crystal brake tube (GTO), or electron injection enhancement grid are brilliant
Body pipe (IEGT).
A kind of level MMC submodules of failure self-cleaning three of the present invention, enable MMC submodule topologys to possess failure self-cleaning
The key of power is the 5th all-controlling power electronics device T5, the 5th diode D5Link position and connected mode.Sent out in system
During raw DC Line Fault, all switching tube signals of locking, MMC submodules are under diode action, in MMC submodule electric currents by positive pole
MMC the first electric capacity of submodule C is introduced during inflow into current path1Voltage suppress line voltage, two poles in current path
Pipe will be forced closed under backward voltage effect, direct by anti-paralleled diode when MMC submodule electric currents are flowed into by negative pole
Current path is blocked to reach the purpose for removing fault current.
During normal work, the first electric capacity C1Both end voltage is the second electric capacity C2Twice of terminal voltage, i.e. UC1=2UC2=2U；
First all-controlling power electronics device T1With the 4th all-controlling power electronics device T4, the second all-controlling power electronics device T2With
3rd all-controlling power electronics device T3Using the logical triggering signal of complementary conducting, i.e. the first full-control type power electronic device
Part T14th all-controlling power electronics device T when opening4Shut-off, the second all-controlling power electronics device T23rd full control when opening
Type power electronic devices T3Shut-off, the first all-controlling power electronics device T1With the second all-controlling power electronics device T2Logic
Signal is not interfere with each other, with the first all-controlling power electronics device T1~the four all-controlling power electronics device T4Antiparallel two pole
Pipe turns in turn according to MMC submodules input voltage；5th all-controlling power electronics device T5It is independent to trigger logical signal, normally
Trigger signal is always 1 during work.Under the mode of operation, the combination of switching tube difference pulse signal makes module export 0, U, 2U tri-
Level voltage.
As shown in Fig. 2 a kind of transverter with the level MMC submodules of failure self-cleaning three of the present invention, includes phase
A phases bridge arm, B phases bridge arm and C phase bridge arms in parallel, described A phase bridge arms are by the company of series connection of bridge arm 4 under bridge arm 1 in A phases and A phases
Connect composition, positive pole of the bridge arm 1 away from one end connection dc bus of bridge arm 4 under A phases in the A phases, bridge arm 4 is remote under the A phases
From one end connection dc bus negative pole of bridge arm 1 in A phases, the intersection point that bridge arm 1 is connected with bridge arm 4 under A phases in the A phases draws three
The a phases of phase power supply, described B phase bridge arms are to be connected in series to form by bridge arm 5 under bridge arm 2 in B phases and B phases, bridge arm in the B phases
2 one end away from bridge arm 5 under B phases connect the positive poles of dc bus, and the one end of bridge arm 5 away from bridge arm 2 in B phases connects under the B phases
Connect dc bus negative pole, the intersection point that bridge arm 2 is connected with bridge arm 5 under B phases in the B phases draws the b phases of three phase mains, described C
Phase bridge arm is made up of bridge arm 6 under bridge arm 3 in C phases and C phases, and one end connection of the bridge arm 3 away from bridge arm 6 under C phases is straight in the C phases
The positive pole of bus is flowed, the one end of bridge arm 6 away from bridge arm 3 in C phases connects dc bus negative pole under the C phases, bridge arm in the C phases
3 intersection points being connected with bridge arm 6 under C phases draw the c phases of three phase mains.Bridge arm 4 under bridge arm 1, A phases, bridge in B phases in described A phases
Bridge arm 5 under arm 2, B phases, the structure of bridge arm 6 is identical under bridge arm 3 and C phases in C phases, is by the level of failure self-cleaning three of more than 2
MMC submodules A and an inductance L1/L4/L2/L5/L3/L6 are connected in series composition, each failure self-cleaning three level MMC
Modules A includes：Including the first switch K being sequentially connected in series1, second switch K2, the 3rd switch K3, the 4th switch K4With
Five switch K5, the first switch K1The other end connect the first electric capacity C1One end, the first switch K1With second switch K2
Connected intersection point connects the second electric capacity C2One end, it is described 3rd switch K3With the 4th switch K4The connected electricity of intersection point connection second
Hold C2The other end, it is described 4th switch K4With the 5th switch K5Connected intersection point connects the first electric capacity C1The other end, described
Five switch K5The other end form the negative poles of the level MMC submodules of failure self-cleaning three, the second switch K2With the 3rd switch K3
Connected intersection point forms the positive pole of the level MMC submodules of failure self-cleaning three.
Described first switch K1, second switch K2, the 3rd switch K3, the 4th switch K4With the 5th switch K5Structure is identical,
It is by an all-controlling power electronics device T1/T2/T3/T4/T5A corresponding and diode D1/D2/D3/D4/D5Inverse parallel connects
Connect composition, i.e. the all-controlling power electronics device T1/T2/T3/T4/T5Drain electrode correspondingly connect diode D1/D2/D3/D4/
1D5Negative pole, the all-controlling power electronics device T1/T2/T3/T4/T5Source electrode correspondingly connect diode D1/D2/D3/D4/D5
Positive pole, wherein, first switch K1, second switch K2, the 3rd switch K3With the 4th switch K4It is previous switch K1/K2/K3
In all-controlling power electronics device T1/T2/T3Source electrode and diode D1/D2/D3Positive pole connect next switch K jointly2/
K3/K4In all-controlling power electronics device T2/T3/T4Drain electrode and diode D2/D3/D4Negative pole, and first switch K1In
First all-controlling power electronics device T1Drain electrode and the first diode D1Negative pole jointly connection the first electric capacity C1One end, and
5th switch K5In the 5th all-controlling power electronics device T5Source electrode and the 5th diode D5Positive pole connect one jointly
Switch i.e. the 4th switch K4In the 4th all-controlling power electronics device T4Source electrode and the 4th diode D4Positive pole, described
Five all-controlling power electronics device T5Drain electrode and the 5th diode D5Negative pole collectively form level MMC of failure self-cleaning three
The negative pole of module.
Equally, in the transverter with the level MMC submodules of failure self-cleaning three of the invention, described full-control type electric power
Electronic device T1/T2/T3/T4/T5, it is insulated gate bipolar transistor (IGBT), or integrated gate commutated thyristor (IGCT), or
Gate level turn-off thyristor (GTO), or electron injection enhancement gate transistor (IEGT).
Fig. 3 is in the case where flowing into negative pole outflow from MMC submodules positive pole, and DC line occurs short trouble and (included
Monopolar grounding fault and bipolar short trouble) locking whole switching tube afterwards trigger signal, now MMC submodules electric current is by positive pole
Flow into, negative pole outflow, electric current flows through the second diode D2→ the first diode D1→ the first electric capacity C1→ the five diode D5, therefore
Barrier electric current is the first electric capacity C1Charging.The structure is extended in whole MMC submodules, all switching tubes in block sytem, electricity
Capacitance voltage sum in logical circulation road is more than AC voltage (monopole is phase voltage when being grounded, and is line voltage when bipolar short-circuit)
Absolute value, all diodes will bear backward voltage and end under voltage effect in current path, so as to block electric current to lead to
Road, the self-cleaning of system failure electric current is realized in the presence of it need not disconnect AC breaker.
Fig. 4 is that DC line generation short trouble (comprising monopolar grounding fault and bipolar short trouble) afterwards all open by locking
The current path of the trigger signal of pipe is closed, after submodule electric current is flowed into by negative pole, because of D in submodule5And D4Opposite direction connection, circuit
Middle no current path is present, and fault current is blocked at once.
Claims (6)
1. a kind of level MMC submodules of failure self-cleaning three, it is characterised in that including the first switch (K being sequentially connected in series1)、
Second switch (K2), the 3rd switch (K3), the 4th switch (K4) and the 5th switch (K5), the first switch (K1) the other end connect
Meet the first electric capacity (C1) one end, the first switch (K1) and second switch (K2) connected intersection point connects the second electric capacity (C2)
One end, it is described 3rd switch (K3) and the 4th switch (K4) connected intersection point connects the second electric capacity (C2) the other end, described
Four switch (K4) and the 5th switch (K5) connected intersection point connects the first electric capacity (C1) the other end, it is described 5th switch (K5)
The other end forms the negative pole of the level MMC submodules of failure self-cleaning three, the second switch (K2) and the 3rd switch (K3) be connected
Intersection point forms the positive pole of the level MMC submodules of failure self-cleaning three.
2. the level MMC submodules of failure self-cleaning three according to claim 1, it is characterised in that described first switch
(K1), second switch (K2), the 3rd switch (K3), the 4th switch (K4) and the 5th switch (K5) structure is identical, it is complete by one
Control type power electronic device (T1/T2/T3/T4/T5) a corresponding and diode (D1/D2/D3/D4/D5) inverse parallel connects and composes,
That is, described all-controlling power electronics device (T1/T2/T3/T4/T5) drain electrode correspondingly connect diode (D1/D2/D3/D4/D5)
Negative pole, the all-controlling power electronics device (T1/T2/T3/T4/T5) source electrode correspondingly connect diode (D1/D2/D3/D4/D5)
Positive pole, wherein, first switch (K1), second switch (K2), the 3rd switch (K3) and the 4th switch (K4) it is previous switch
(K1/K2/K3) in all-controlling power electronics device (T1/T2/T3) source electrode and diode (D1/D2/D3) positive pole connect jointly
Next switch (K2/K3/K4) in all-controlling power electronics device (T2/T3/T4) drain electrode and diode (D2/D3/D4) it is negative
Pole, and first switch (K1) in the first all-controlling power electronics device (T1) drain electrode and the first diode (D1) negative pole be total to
With the first electric capacity (C of connection1) one end, and the 5th switch (K5) in the 5th all-controlling power electronics device (T5) source electrode and
5th diode (D5) positive pole connect jointly one switch the i.e. the 4th switch (K4) in the 4th all-controlling power electronics device
(T4) source electrode and the 4th diode (D4) positive pole, the 5th all-controlling power electronics device (T5) drain electrode and the five or two
Pole pipe (D5) negative pole collectively form the negative poles of the level MMC submodules of failure self-cleaning three.
3. the level MMC submodules of failure self-cleaning three according to claim 2, it is characterised in that described full-control type electricity
Power electronic device (T1/T2/T3/T4/T5) it is insulated gate bipolar transistor, or integrated gate commutated thyristor, or gate pole
Turn-off thyristor, or electron injection enhancement gate transistor.
4. a kind of transverter of the level MMC submodules of failure self-cleaning three with described in claim 1, includes what is be in parallel
A phases bridge arm, B phases bridge arm and C phase bridge arms, described A phase bridge arms are connected in series by bridge arm (4) under bridge arm (1) in A phases and A phases
Form, positive pole of the bridge arm (1) away from one end connection dc bus of bridge arm (4) under A phases in the A phases, bridge arm under the A phases
(4) one end away from bridge arm (1) in A phases connects dc bus negative pole, and bridge arm (1) is connected with bridge arm (4) under A phases in the A phases
Intersection point draw three phase mains a phases, described B phase bridge arms are to be connected in series structure by bridge arm (5) under bridge arm (2) in B phases and B phases
Into, positive pole of the bridge arm (2) away from one end connection dc bus of bridge arm (5) under B phases in the B phases, bridge arm (5) under the B phases
One end connection dc bus negative pole away from bridge arm (2) in B phases, bridge arm (2) and the friendship that bridge arm (5) is connected under B phases in the B phases
Point draws the b phases of three phase mains, and described C phase bridge arms are made up of bridge arm (6) under bridge arm (3) in C phases and C phases, in the C phases
The one end of bridge arm (3) away from bridge arm (6) under C phases connects the positive pole of dc bus, and bridge arm (6) is away from bridge arm in C phases under the C phases
(3) one end connects dc bus negative pole, and bridge arm (3) draws three-phase electricity with the intersection point that bridge arm (6) is connected under C phases in the C phases
The c phases in source, it is characterised in that bridge arm (4) under bridge arm (1), A phases in described A phases, bridge arm (5) under bridge arm (2), B phases in B phases,
Bridge arm (3) is identical with bridge arm (6) structure under C phases in C phases, is by the level MMC submodules of failure self-cleaning three of more than 2
(A) and an inductance (L1/L4/L2/L5/L3/L6) is connected in series composition, each level MMC submodule of failure self-cleaning three
(A) include：Including the first switch (K being sequentially connected in series1), second switch (K2), the 3rd switch (K3), the 4th switch
(K4) and the 5th switch (K5), the first switch (K1) the other end connect the first electric capacity (C1) one end, the first switch
(K1) and second switch (K2) connected intersection point connects the second electric capacity (C2) one end, it is described 3rd switch (K3) switched with the 4th
(K4) connected intersection point connects the second electric capacity (C2) the other end, it is described 4th switch (K4) and the 5th switch (K5) connected friendship
The first electric capacity (C of point connection1) the other end, it is described 5th switch (K5) the other end form the level MMC submodules of failure self-cleaning three
The negative pole of block, the second switch (K2) and the 3rd switch (K3) connected intersection point forms the level MMC submodules of failure self-cleaning three
Positive pole.
5. the transverter according to claim 4 with the level MMC submodules of failure self-cleaning three, it is characterised in that institute
First switch (the K stated1), second switch (K2), the 3rd switch (K3), the 4th switch (K4) and the 5th switch (K5) structure is identical,
It is by an all-controlling power electronics device (T1/T2/T3/T4/T5) a corresponding and diode (D1/D2/D3/D4/D5) it is anti-simultaneously
Connection connects and composes, i.e. the all-controlling power electronics device (T1/T2/T3/T4/T5) drain electrode correspondingly connect diode (D1/D2/
D3/D4/D5) negative pole, the all-controlling power electronics device (T1/T2/T3/T4/T5) source electrode correspondingly connect diode (D1/
D2/D3/D4/D5) positive pole, wherein, first switch (K1), second switch (K2), the 3rd switch (K3) and the 4th switch (K4) be
Previous switch (K1/K2/K3) in all-controlling power electronics device (T1/T2/T3) source electrode and diode (D1/D2/D3) just
Next switch (K is extremely connected jointly2/K3/K4) in all-controlling power electronics device (T2/T3/T4) drain electrode and diode
(D2/D3/D4) negative pole, and first switch (K1) in the first all-controlling power electronics device (T1) drain electrode and the first diode
(D1) negative pole jointly connection the first electric capacity (C1) one end, and the 5th switch (K5) in the 5th all-controlling power electronics device
(T5) source electrode and the 5th diode (D5) positive pole connect jointly one switch the i.e. the 4th switch (K4) in the 4th full-control type
Power electronic devices (T4) source electrode and the 4th diode (D4) positive pole, the 5th all-controlling power electronics device (T5)
Drain electrode and the 5th diode (D5) negative pole collectively form the negative poles of the level MMC submodules of failure self-cleaning three.
6. the transverter according to claim 5 with the level MMC submodules of failure self-cleaning three, it is characterised in that institute
All-controlling power electronics device (the T stated1/T2/T3/T4/T5) it is insulated gate bipolar transistor, or integrated gate commutated brilliant lock
Pipe, or gate level turn-off thyristor, or electron injection enhancement gate transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710753770.7A CN107370406A (en) | 2017-08-29 | 2017-08-29 | The level MMC submodules of failure self-cleaning three and the transverter with the submodule |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710753770.7A CN107370406A (en) | 2017-08-29 | 2017-08-29 | The level MMC submodules of failure self-cleaning three and the transverter with the submodule |
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| CN107370406A true CN107370406A (en) | 2017-11-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710753770.7A Pending CN107370406A (en) | 2017-08-29 | 2017-08-29 | The level MMC submodules of failure self-cleaning three and the transverter with the submodule |
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| CN (1) | CN107370406A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110098598A (en) * | 2019-05-15 | 2019-08-06 | 重庆大学 | Inverse-impedance type mixing submodule and its failure blocking-up method with failure blocking ability |
| CN110943636A (en) * | 2019-11-25 | 2020-03-31 | 国网山东省电力公司潍坊供电公司 | Multi-level module for clearing direct current short-circuit current |
-
2017
- 2017-08-29 CN CN201710753770.7A patent/CN107370406A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110098598A (en) * | 2019-05-15 | 2019-08-06 | 重庆大学 | Inverse-impedance type mixing submodule and its failure blocking-up method with failure blocking ability |
| CN110943636A (en) * | 2019-11-25 | 2020-03-31 | 国网山东省电力公司潍坊供电公司 | Multi-level module for clearing direct current short-circuit current |
| CN110943636B (en) * | 2019-11-25 | 2023-04-28 | 国网山东省电力公司潍坊供电公司 | Multi-level module for eliminating direct current short-circuit current |
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Application publication date: 20171121 |