CN107395042A - Possess the MMC submodules for the ability of removing obstacles and the transverter with the submodule - Google Patents
Possess the MMC submodules for the ability of removing obstacles and the transverter with the submodule Download PDFInfo
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- CN107395042A CN107395042A CN201710753769.4A CN201710753769A CN107395042A CN 107395042 A CN107395042 A CN 107395042A CN 201710753769 A CN201710753769 A CN 201710753769A CN 107395042 A CN107395042 A CN 107395042A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
- H02H7/1227—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters responsive to abnormalities in the output circuit, e.g. short circuit
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/26—Sectionalised protection of cable or line systems, e.g. for disconnecting a section on which a short-circuit, earth fault, or arc discharge has occured
- H02H7/268—Sectionalised protection of cable or line systems, e.g. for disconnecting a section on which a short-circuit, earth fault, or arc discharge has occured for dc systems
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The present invention provides a kind of MMC submodules for possessing the ability of removing obstacles and the transverter with the submodule, and the MMC submodules that the present invention possesses the ability of removing obstacles mainly include：3 switch elements, 1 diode and 1 capacitor, the structure of wherein switch element is identical, is formed by 1 all-controlling power electronics device is corresponding with 1 diode inverse parallel；It is symmetrical three-phase structure with the converter structure for possessing the ability of removing obstacles, the upper and lower bridge arm of each phase is in series by the MMC submodules for possessing the ability of removing obstacles of more than 2 with inductance.The MMC submodules for possessing the ability of removing obstacles of the present invention and the transverter device number with the submodule are few, it is simple to control, fault current can be quickly removed when monopole short trouble or bipolar short trouble occur for DC side, and can realize under transient fault it is quick restarting, the effective guarantee stable operation of system.
Description
Technical field
The present invention relates to a kind of MMC submodules.More particularly to a kind of MMC submodules for possessing the ability of removing obstacles and with this
The transverter of submodule.
Background technology
Modularization multi-level converter from the R.Marquardt by German Bundeswehr Munich universities in 2002 and
A.Lesnicar has obtained extensive concern both domestic and external after proposing, as the preferred change of current in high voltage direct current transmission project
Device.Compared with traditional voltage source converter, MMC mainly has the following advantages：
(1) the easy dilatation of modular construction, enough submodule quantities are set to meet the need of different voltages and power grade
Ask；
(2) redundancy submodule makes system possess preferable troubleshooting capability and reliability；
(3) output waveform quality is higher, and harmonic content is low.
Straight-flow system is not because electric current has zero crossing, and fault current climbing is higher when DC side breaks down, and can cause
Larger overcurrent, the security of system is seriously endangered, and the removing difficulty of fault current is more than AC system, therefore, directly
The short trouble of Flow Line is one of key issue of MMC urgent need to resolve.Cut-off breaker is that a kind of tradition removes fault current
Means, comprising AC breaker and DC side breaker two ways, wherein dc circuit breaker can quickly remove failure electricity
Stream, but it is applied to the exploitation of the dc circuit breaker of high-power occasion and develops larger difficulty be present.In addition, two kinds disconnected
All there is the problem of reboot time is longer in road device, weaker to the disposal ability of the transient fault of DC side.Compared with breaker, electricity
The switching speed of power electronic device is very fast, therefore, in order to reduce research and development difficulty, improves the dynamic responding speed of system, can be right
MMC submodule carries out functions expanding, submodule itself is possessed the ability for removing fault current.
Submodule topology is half-bridge submodule topology used by common MMC in engineering, even if during system jam
Locking pulse signal, the backward dioded of half-bridge submodule can still provide current path, cause fault current constantly to increase.Can be clear
Except it is most representational in the MMC of fault current be full-bridge submodule and clamping type Shuangzi module.Full-bridge submodule has 4
Switching tube, exportable 0, three level of+U ,-U, and-U belongs to unnecessary state, actual full-bridge submodule in MMC practical applications
Block is equal to two level submodules, and the submodule can remove fault current by locking pulse signal, but switching tube is individual
Number is more, higher to the coherence request of device trigger signal；Clamper Shuangzi module device has 5 switching tubes, exportable altogether
0, U, tri- level of 2U, are compared with full-bridge submodule, and the actually available level number of submodule device increases, and device number substantially drops
It is low, but the coupling of the sub-modular structure adds the complexity and control difficulty of system.
Based on above mentioned problem, study a kind of control and the fairly simple MMC submodules for possessing the ability of removing obstacles of structure are opened up
Flutter, be advantageous to the simplification of whole system structure and control system.
The content of the invention
It is simple the technical problem to be solved by the invention is to provide a kind of control and can quickly remove the tool of fault current
The MMC submodules of standby ability of removing obstacles and the transverter with the submodule.
The technical solution adopted in the present invention is：A kind of MMC submodules for possessing the ability of removing obstacles include being sequentially connected in series
First switch K1, the 4th diode D4With second switch K2, the first switch K1The other end connect the first electric capacity C1One
End and the 3rd switch K3One end, the second switch K2With the 4th diode D4Connected intersection point connects the first electric capacity C1's
The other end, the second switch K2The other end connection the 3rd switch K3The other end, the first switch K1With the 4th diode
D4Connected intersection point forms the positive pole for the MMC submodules for possessing the ability of removing obstacles, the second switch K2With the described 3rd switch K3Phase
Intersection point even forms the negative pole for the MMC submodules for possessing the ability of removing obstacles.
Described first switch K1, second switch K2, the 3rd switch K3Structure is identical, is by a full-control type electric power electricity
Sub- device T1/T2/T3A corresponding and diode D1/D2/D3Inverse parallel connects and composes, i.e. the all-controlling power electronics device
T1/T2/T3Drain electrode correspondingly connect diode D1/D2/D3Negative pole, the all-controlling power electronics device T1/T2/T3Source electrode
Corresponding connection diode D1/D2/D3Positive pole, wherein, first switch K1In all-controlling power electronics device T1Source electrode and two
Pole pipe D1Positive pole jointly connection the 4th diode D4Negative pole, and first switch K1In the first all-controlling power electronics device
T1Drain electrode and the first diode D1Negative pole jointly connection the first electric capacity C1One end and the 3rd switch K3In the 3rd full control
Type power electronic devices T3Drain electrode and the 3rd diode D3Negative pole, second switch K2In all-controlling power electronics device T2
Source electrode and the second diode D2Positive pole jointly connection the 4th diode D4Positive pole, and second switch K2In the second full control
Type power electronic devices T2Drain electrode and the second diode D2Negative pole jointly connection the 3rd switch K3In the 3rd full-control type electric power
Electronic device T3Source electrode and the 3rd diode D3Positive pole.
Heretofore described all-controlling power electronics device T1/T2/T3/T4/T5, it is insulated gate bipolar transistor
(IGBT), or integrated gate commutated thyristor (IGCT), OR gate pole cut-off crystal brake tube (GTO), or electron injection enhancement grid are brilliant
Body pipe (IEGT).
The transverter of the described MMC submodules for possessing ability of removing obstacles, include the A phases bridge arm being in parallel, B phase bridges
Arm and C phase bridge arms, described A phase bridge arms are to be connected in series to form by bridge arm under bridge arm in A phases and A phases, and bridge arm is remote in the A phases
From the positive pole of one end connection dc bus of bridge arm under A phases, the one end of bridge arm away from bridge arm in A phases connects direct current under the A phases
Bus negative pole, the intersection point that bridge arm is connected with bridge arm under A phases in the A phases draw a phases of three phase mains, and described B phase bridge arms are
It is connected in series and is formed by bridge arm under bridge arm in B phases and B phases, one end connection direct current of the bridge arm away from bridge arm under B phases is female in the B phases
The positive pole of line, the one end of bridge arm away from bridge arm in B phases connects dc bus negative pole under the B phases, bridge arm and B phases in the B phases
The connected intersection point of lower bridge arm draws the b phases of three phase mains, and described C phase bridge arms are made up of bridge arm under bridge arm in C phases and C phases,
The one end of bridge arm away from bridge arm under C phases connects the positive pole of dc bus in the C phases, and bridge arm is away from bridge arm in C phases under the C phases
One end connection dc bus negative pole, the c phases for the intersection point extraction three phase mains that bridge arm is connected with bridge arm under C phases in the C phases, its
It is characterised by, bridge arm under bridge arm, A phases in described A phases, bridge arm under bridge arm, B phases in B phases, bridge arm knot under bridge arm and C phases in C phases
Structure is identical, is by the MMC submodules for possessing the ability of removing obstacles and inductance (L1/L4/L2/L5/L3/L6) string of more than 2
Connection connects and composes, and each MMC submodule for possessing the ability of removing obstacles includes：The first switch K being sequentially connected in series1, the 4th
Diode D4With second switch K2, the first switch K1The other end connect the first electric capacity C1One end and the 3rd switch K3's
One end, the second switch K2With the 4th diode D4Connected intersection point connects the first electric capacity C1The other end, the second switch
K2The other end connection the 3rd switch K3The other end, the first switch K1With the 4th diode D4Connected intersection point forms tool
The positive pole of the MMC submodules of standby ability of removing obstacles, the second switch K2With the described 3rd switch K3Connected intersection point, which is formed, to be possessed clearly
The negative pole of the MMC submodules of barrier ability.
Described first switch K1, second switch K2, the 3rd switch K3Structure is identical, is by a full-control type electric power electricity
Sub- device T1/T2/T3A corresponding and diode D1/D2/D3Inverse parallel connects and composes, i.e. the all-controlling power electronics device
T1/T2/T3Drain electrode correspondingly connect diode D1/D2/D3Negative pole, the all-controlling power electronics device T1/T2/T3Source electrode
Corresponding connection diode D1/D2/D3Positive pole, wherein, first switch K1In all-controlling power electronics device T1Source electrode and two
Pole pipe D1Positive pole jointly connection the 4th diode D4Negative pole, and first switch K1In the first all-controlling power electronics device
T1Drain electrode and the first diode D1Negative pole jointly connection the first electric capacity C1One end and the 3rd switch K3In the 3rd full control
Type power electronic devices T3Drain electrode and the 3rd diode D3Negative pole, second switch K2In all-controlling power electronics device T2
Source electrode and the second diode D2Positive pole jointly connection the 4th diode D4Positive pole, and second switch K2In the second full control
Type power electronic devices T2Drain electrode and the second diode D2Source electrode jointly connection the 3rd switch K3In the 3rd full-control type electric power
Electronic device T3Source electrode and the 3rd diode D3Positive pole.
Equally, in the transverter for possessing ability MMC submodules of removing obstacles of the invention, described full-control type power electronic
Device T1/T2/T3/T4/T5, it is insulated gate bipolar transistor (IGBT), or integrated gate commutated thyristor (IGCT), OR gate pole
Turn-off thyristor (GTO), or electron injection enhancement gate transistor (IEGT).
The MMC submodules for possessing the ability of removing obstacles of the present invention and the transverter with the submodule, submodule control is simple,
Can directly transplanting half-bridge submodule control method, reduce the research and development difficulty of control system, compared with bridge-type submodule, together
Reduce an all-controlling power electronics device etc. submodule under voltage class, be advantageous to the hardware cost of control system；And pincers
Position Shuangzi module compares the complexity for then reducing control and structure, reduce further MMC construction cost.
Brief description of the drawings
Fig. 1 is the schematic diagram for the MMC submodules that the present invention possesses the ability of removing obstacles；
Fig. 2 is the composition block diagram of the transverter for the MMC submodules that the present invention possesses ability of removing obstacles；
Fig. 3 is that electric current flows into MMC submodule current paths when negative pole flows out from MMC submodules positive pole in DC Line Fault；
Fig. 4 is that electric current flows into MMC submodule current paths when positive pole flows out from MMC submodules negative pole in DC Line Fault.
In figure
1：Bridge arm 2 in A phases：Bridge arm in B phases
3：Bridge arm 4 in C phases：Bridge arm under A phases
5：Bridge arm 6 under B phases：Bridge arm under C phases
Embodiment
A kind of MMC submodules for possessing the ability of removing obstacles of the present invention are made specifically with reference to embodiment and accompanying drawing
It is bright.
As shown in figure 1, a kind of MMC submodules for possessing the ability of removing obstacles of the present invention, including first be sequentially connected in series
Switch K1, the 4th diode D4With second switch K2, the first switch K1The other end connect the first electric capacity C1One end and
3rd switch K3One end, the second switch K2With the 4th diode D4Connected intersection point connects the first electric capacity C1The other end,
The second switch K2The other end connection the 3rd switch K3The other end, the first switch K1With the 4th diode D4It is connected
Intersection point form possess the ability of removing obstacles MMC submodules positive pole, the second switch K2With the described 3rd switch K3Connected friendship
Point forms the negative pole for the MMC submodules for possessing the ability of removing obstacles.
Described first switch K1, second switch K2, the 3rd switch K3Structure is identical, is by a full-control type electric power electricity
Sub- device T1/T2/T3A corresponding and diode D1/D2/D3Inverse parallel connects and composes, i.e. the all-controlling power electronics device
T1/T2/T3Drain electrode correspondingly connect diode D1/D2/D3Negative pole, the all-controlling power electronics device T1/T2/T3Source electrode
Corresponding connection diode D1/D2/D3Positive pole, wherein, first switch K1In all-controlling power electronics device T1Source electrode and two
Pole pipe D1Positive pole jointly connection the 4th diode D4Negative pole, and first switch K1In the first all-controlling power electronics device
T1Drain electrode and the first diode D1Negative pole jointly connection the first electric capacity C1One end and the 3rd switch K3In the 3rd full control
Type power electronic devices T3Drain electrode and the 3rd diode D3Negative pole, second switch K2In all-controlling power electronics device T2
Source electrode and the second diode D2Positive pole jointly connection the 4th diode D4Positive pole, and second switch K2In the second full control
Type power electronic devices T2Drain electrode and the second diode D2Negative pole jointly connection the 3rd switch K3In the 3rd full-control type electric power
Electronic device T3Source electrode and the 3rd diode D3Positive pole.
Heretofore described all-controlling power electronics device T1/T2/T3/T4/T5, it is insulated gate bipolar transistor
(IGBT), or integrated gate commutated thyristor (IGCT), OR gate pole cut-off crystal brake tube (GTO), or electron injection enhancement grid are brilliant
Body pipe (IEGT).
A kind of MMC submodules for possessing the ability of removing obstacles of the present invention, make MMC submodule topologys possess failure self-cleaning ability
Key be the first all-controlling power electronics device T1, the first diode D1, the second all-controlling power electronics device T2, second
Diode D2, the 3rd all-controlling power electronics device T3, the 3rd diode D3And the 4th diode D4Link position and connection
Mode.When DC Line Fault occurs in system, i.e., by all switching tube signals of locking under submodule diode action, according to
Submodule electric capacity C is introduced in the different sense of current current path of submodule1Voltage suppress line voltage.In current path
Diode will be forced closed under backward voltage effect, so as to remove fault current.
During normal work, the first all-controlling power electronics device T1Trigger signal is always 1, the second full-control type power electronic
Device T2With the 3rd all-controlling power electronics device T3Using the logical triggering signal of complementary conducting, i.e. the second full-control type electricity
Power electronic device T23rd all-controlling power electronics device T when opening3Turn off, under the mode of operation, switching tube difference pulse signal
Combination make submodule two kinds of level of exportable 0, U.
As shown in Fig. 2 the transverter of the submodule for possessing ability of removing obstacles of the present invention, includes the A phases being in parallel
Bridge arm, B phases bridge arm and C phase bridge arms, described A phase bridge arms are to be connected in series to form by bridge arm 4 under bridge arm 1 in A phases and A phases, institute
The positive pole of one end connection dc bus of bridge arm 4 under the remote A phases of bridge arm 1 in A phases is stated, bridge arm 4 is away from A phases under the A phases
One end connection dc bus negative pole of bridge arm 1, the intersection point extraction three phase mains that bridge arm 1 is connected with bridge arm 4 under A phases in the A phases
A phases, described B phase bridge arms are to be connected in series to form by bridge arm 5 under bridge arm 2 in B phases and B phases, and bridge arm 2 is remote in the B phases
From the positive pole of one end connection dc bus of bridge arm 5 under B phases, one end of bridge arm 2 connects in the remote B phases of bridge arm 5 under the B phases
Dc bus negative pole, the intersection point that bridge arm 2 is connected with bridge arm 5 under B phases in the B phases draw the b phases of three phase mains, described C phases
Bridge arm is made up of bridge arm 6 under bridge arm 3 in C phases and C phases, and one end connection of bridge arm 6 is straight under the remote C phases of bridge arm 3 in the C phases
The positive pole of bus is flowed, one end of bridge arm 3 connects dc bus negative pole in remote the C phases of bridge arm 6 under the C phases, bridge in the C phases
The intersection point that arm 3 is connected with bridge arm 6 under C phases draws the c phases of three phase mains.
Bridge arm 4 under bridge arm 1, A phases in described A phases, bridge arm 5 under bridge arm 2, B phases in B phases, bridge under bridge arm 3 and C phases in C phases
The structure of arm 6 is identical, is by the MMC submodules A for possessing the ability of removing obstacles and an inductance L1/L4/L2/L5/L3/ of more than 2
L6 is connected in series composition, and each MMC submodules A for possessing the ability of removing obstacles includes as shown in Figure 1：Including being sequentially connected in series
First switch K1, the 4th diode D4With second switch K2, the first switch K1The other end connect the first electric capacity C1One
End and the 3rd switch K3One end, the second switch K2With the 4th diode D4Connected intersection point connects the first electric capacity C1's
The other end, the second switch K2The other end connection the 3rd switch K3The other end, the first switch K1With the 4th diode
D4Connected intersection point forms the positive pole for the MMC submodules for possessing the ability of removing obstacles, the second switch K2With the described 3rd switch K3Phase
Intersection point even forms the negative pole for the MMC submodules for possessing the ability of removing obstacles.
Described first switch K1, second switch K2, the 3rd switch K3Structure is identical, is by a full-control type electric power electricity
Sub- device T1/T2/T3A corresponding and diode D1/D2/D3Inverse parallel connects and composes, i.e. the all-controlling power electronics device
T1/T2/T3Drain electrode correspondingly connect diode D1/D2/D3Negative pole, the all-controlling power electronics device T1/T2/T3Source electrode
Corresponding connection diode D1/D2/D3Positive pole, wherein, first switch K1In all-controlling power electronics device T1Source electrode and two
Pole pipe D1Positive pole jointly connection the 4th diode D4Negative pole, and first switch K1In the first all-controlling power electronics device
T1Drain electrode and the first diode D1Negative pole jointly connection the first electric capacity C1One end and the 3rd switch K3In the 3rd full control
Type power electronic devices T3Drain electrode and the 3rd diode D3Negative pole, second switch K2In all-controlling power electronics device T2
Source electrode and the second diode D2Positive pole jointly connection the 4th diode D4Positive pole, and second switch K2In the second full control
Type power electronic devices T2Drain electrode and the second diode D2Negative pole jointly connection the 3rd switch K3In the 3rd full-control type electric power
Electronic device T3Source electrode and the 3rd diode D3Positive pole.
Equally, in the transverter for possessing ability MMC submodules of removing obstacles of the invention, described full-control type power electronic
Device T1/T2/T3/T4/T5, it is insulated gate bipolar transistor (IGBT), or integrated gate commutated thyristor (IGCT), OR gate pole
Turn-off thyristor (GTO), or electron injection enhancement gate transistor (IEGT).
Fig. 3 is that DC line generation short trouble (comprising monopolar grounding fault and bipolar short trouble) afterwards all open by locking
The current path of pipe trigger signal is closed, now submodule electric current is flowed into by positive pole, and negative pole outflow, electric current flows through the first diode D1
→ the first electric capacity C1→ the second diode D2, fault current is the first electric capacity C1Charging.The structure is extended in whole MMC, closed
All switching tubes in lock system, the capacitance voltage sum on current path be more than AC voltage (monopole is phase voltage when being grounded,
It is line voltage when bipolar short-circuit) absolute value of amplitude, all diodes will bear backward voltage and in the voltage in current path
Effect is lower to be ended, and so as to block current path, direct fault current is removed in the presence of it need not disconnect AC breaker.
Fig. 4 is that DC line generation short trouble (comprising monopolar grounding fault and bipolar short trouble) afterwards all open by locking
The trigger signal of pipe is closed, now submodule electric current is flowed into by negative pole, positive pole flows out, and electric current is through the 3rd diode D3→ the first electric capacity
C1→ the four diode D4, the first electric capacity C1Charging, the structure is extended in whole MMC, all switching tubes in block sytem,
Capacitance voltage sum on current path is more than AC voltage (monopole is phase voltage when being grounded, and is line voltage when bipolar short-circuit)
Positive amplitude, all switching tubes bear backward voltage cut-off in current path, block current path, break that need not disconnect AC
The self-cleaning of system failure electric current is realized in the presence of the device of road.
Claims (6)
1. a kind of MMC submodules for possessing the ability of removing obstacles, it is characterised in that including the first switch (K being sequentially connected in series1),
Four diode (D4) and second switch (K2), the first switch (K1) the other end connect the first electric capacity (C1) one end and
3rd switch (K3) one end, the second switch (K2) and the 4th diode (D4) connected intersection point connects the first electric capacity (C1)
The other end, the second switch (K2) the other end connection the 3rd switch (K3) the other end, the first switch (K1) and the
Four diode (D4) connected intersection point forms the positive poles of the MMC submodules for possessing the ability of removing obstacles, the second switch (K2) with it is described
3rd switch (K3) connected intersection point forms the negative poles of the MMC submodules for possessing the ability of removing obstacles.
2. the MMC submodules according to claim 1 for possessing the ability of removing obstacles, it is characterised in that described first switch
(K1), second switch (K2), the 3rd switch (K3) structure is identical, it is by an all-controlling power electronics device (T1/T2/T3) right
Ying Yuyi diode (D1/D2/D3) inverse parallel connects and composes, i.e. the all-controlling power electronics device (T1/T2/T3) leakage
Extremely corresponding connection diode (D1/D2/D3) negative pole, the all-controlling power electronics device (T1/T2/T3) source electrode corresponding connect
Diode (D1/D2/D3) positive pole, wherein, first switch (K1) in all-controlling power electronics device (T1) source electrode and two poles
Manage (D1) positive pole jointly connection the 4th diode (D4) negative pole, and first switch (K1) in the first full-control type power electronic
Device (T1) drain electrode and the first diode (D1) negative pole jointly connection the first electric capacity (C1) one end and the 3rd switch (K3)
In the 3rd all-controlling power electronics device (T3) drain electrode and the 3rd diode (D3) negative pole, second switch (K2) in it is complete
Control type power electronic device (T2) source electrode and the second diode (D2) positive pole jointly connection the 4th diode (D4) positive pole,
And second switch (K2) in the second all-controlling power electronics device (T2) drain electrode and the second diode (D2) negative pole connect jointly
Meet the 3rd switch (K3) in the 3rd all-controlling power electronics device (T3) source electrode and the 3rd diode (D3) positive pole.
3. the MMC submodules according to claim 2 for possessing the ability of removing obstacles, it is characterised in that described full-control type electric power
Electronic device (T1/T2/T3) it is insulated gate bipolar transistor, or integrated gate commutated thyristor, or gate electrode capable of switching off are brilliant
Brake tube, or electron injection enhancement gate transistor.
4. a kind of transverter with the MMC submodules for possessing the ability of removing obstacles with described in claim 1, includes and is in parallel
A phases bridge arm, B phases bridge arm and C phase bridge arms, described A phase bridge arms be by under bridge arm (1) in A phases and A phases bridge arm (4) series connection connect
Connect composition, positive pole of the bridge arm (1) away from one end connection dc bus of bridge arm (4) under A phases in the A phases, bridge arm under the A phases
(4) one end away from bridge arm (1) in A phases connects dc bus negative pole, and bridge arm (1) is connected with bridge arm (4) under A phases in the A phases
Intersection point draw three phase mains a phases, described B phase bridge arms are to be connected in series structure by bridge arm (5) under bridge arm (2) in B phases and B phases
Into, positive pole of the bridge arm (2) away from one end connection dc bus of bridge arm (5) under B phases in the B phases, bridge arm (5) under the B phases
One end connection dc bus negative pole away from bridge arm (2) in B phases, bridge arm (2) and the friendship that bridge arm (5) is connected under B phases in the B phases
Point draws the b phases of three phase mains, and described C phase bridge arms are made up of bridge arm (6) under bridge arm (3) in C phases and C phases, in the C phases
The one end of bridge arm (3) away from bridge arm (6) under C phases connects the positive pole of dc bus, and bridge arm (6) is away from bridge arm in C phases under the C phases
(3) one end connects dc bus negative pole, and bridge arm (3) draws three-phase electricity with the intersection point that bridge arm (6) is connected under C phases in the C phases
The c phases in source, it is characterised in that bridge arm (4) under bridge arm (1), A phases in described A phases, bridge arm (5) under bridge arm (2), B phases in B phases,
In C phases bridge arm (3) is identical with bridge arm (6) structure under C phases, is to possess the MMC submodules (A) and one removed obstacles by more than 2
Individual inductance (L1/L4/L2/L5/L3/L6) is connected in series composition, and each MMC submodule (A) for possessing the ability of removing obstacles includes：
Including the first switch (K being sequentially connected in series1), the 4th diode (D4), second switch (K2), the first switch (K1)
The other end connects the first electric capacity (C1) one end and the 3rd switch (K3), the second switch (K2) and the 4th diode (D4)
Connected intersection point connects the first electric capacity (C1) the other end, the second switch (K2) the other end connection the 3rd switch (K3)
The other end, affiliated first switch (K1) and the 4th diode (D4) connected intersection point forms the MMC submodules that possess the ability of removing obstacles
Positive pole, the second switch (K2) and the described 3rd switch (K3) connected intersection point forms the MMC submodules that possess the ability of removing obstacles
Negative pole.
5. the transverter of the MMC submodules according to claim 4 for possessing ability of removing obstacles, it is characterised in that described
First switch (K1), second switch (K2), the 3rd switch (K3) structure is identical, it is by an all-controlling power electronics device
(T1/T2/T3) a corresponding and diode (D1/D2/D3) inverse parallel connects and composes, i.e. the all-controlling power electronics device
(T1/T2/T3) drain electrode correspondingly connect diode (D1/D2/D3) negative pole, the all-controlling power electronics device (T1/T2/T3)
Source electrode correspondingly connect diode (D1/D2/D3) positive pole, wherein, first switch (K1) in all-controlling power electronics device
(T1) source electrode and diode (D1) positive pole jointly connection the 4th diode (D4) negative pole, and first switch (K1) in
One all-controlling power electronics device (T1) drain electrode and the first diode (D1) negative pole jointly connection the first electric capacity (C1) one end
And the 3rd switch (K3) in the 3rd all-controlling power electronics device (T3) drain electrode and the 3rd diode (D3) negative pole,
Two switch (K2) in all-controlling power electronics device (T2) source electrode and the second diode (D2) positive pole jointly connection the four or two
Pole pipe (D4) positive pole, and second switch (K2) in the second all-controlling power electronics device (T2) drain electrode and the second diode
(D2) negative pole jointly connection the 3rd switch (K3) in the 3rd all-controlling power electronics device (T3) source electrode and the 3rd diode
(D3) positive pole.
6. the transverter of the MMC submodules according to claim 5 for possessing ability of removing obstacles, it is characterised in that described
All-controlling power electronics device (T1/T2/T3) it is insulated gate bipolar transistor, or integrated gate commutated thyristor, or
Gate level turn-off thyristor, or electron injection enhancement gate transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710753769.4A CN107395042A (en) | 2017-08-29 | 2017-08-29 | Possess the MMC submodules for the ability of removing obstacles and the transverter with the submodule |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710753769.4A CN107395042A (en) | 2017-08-29 | 2017-08-29 | Possess the MMC submodules for the ability of removing obstacles and the transverter with the submodule |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108964493A (en) * | 2018-08-20 | 2018-12-07 | 华北电力大学（保定） | A kind of MMC topological structure having DC Line Fault Scavenging activity |
| CN109617439A (en) * | 2018-12-28 | 2019-04-12 | 东南大学 | A kind of MMC topology with direct-current short circuit fault current blocking ability |
| CN113258802A (en) * | 2021-04-22 | 2021-08-13 | 昆明理工大学 | Submodule topological structure with direct current fault clearing and self-voltage-sharing capabilities |
-
2017
- 2017-08-29 CN CN201710753769.4A patent/CN107395042A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108964493A (en) * | 2018-08-20 | 2018-12-07 | 华北电力大学（保定） | A kind of MMC topological structure having DC Line Fault Scavenging activity |
| CN109617439A (en) * | 2018-12-28 | 2019-04-12 | 东南大学 | A kind of MMC topology with direct-current short circuit fault current blocking ability |
| CN109617439B (en) * | 2018-12-28 | 2020-01-03 | 东南大学 | MMC topology with direct current short-circuit fault current blocking capability |
| CN113258802A (en) * | 2021-04-22 | 2021-08-13 | 昆明理工大学 | Submodule topological structure with direct current fault clearing and self-voltage-sharing capabilities |
| CN113258802B (en) * | 2021-04-22 | 2024-02-02 | 昆明理工大学 | Submodule topological structure with direct-current fault clearing and self-voltage-equalizing capabilities |
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