CN207410245U - The clamped submodule of capacitance, the modularization multi-level converter using it - Google Patents
The clamped submodule of capacitance, the modularization multi-level converter using it Download PDFInfo
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Abstract
The utility model provides a kind of clamped submodule of capacitance, the modularization multi-level converter using it, and the clamped submodule of capacitance includes transistorT 1 、T 2 、T 3, three diodesD 1 、D 2 、D 3, a capacitorC.Wherein,T 1 、T 2 、T 3Collector respectively withD 1 、D 2 、D 3Cathode be connected,T 1 、T 2 、T 3Emitter respectively withD 1 、D 2 、D 3Anode be connected.CapacitorCPositive terminal withT 1Collector be connected, and the two junction draw submodule high-voltage output end；CapacitorCNegative pole end withT 2Emitter be connected.T 3Collector withT 2Collector be connected, and the two junction draw submodule low-voltage output；T 3Emitter withT 1Emitter be connected.The utility model can effectively block direct fault current；After wholly-controled device locking, it can be acted on by the one-way conduction of diode to inhibit the afterflow of bridge arm reactor, failure blocking ability is stronger.
Description
Technical field
The utility model belongs to electric system technical field of direct current power transmission, is related to a kind of clamped submodule of capacitance, using it
Modularization multi-level converter.
Background technology
Modularization multi-level converter (Modular Multilevel Converter, MMC) uses sub-module cascade knot
Structure has many advantages, such as that switching frequency is relatively low, loss is smaller, waveform quality is high.Traditional half-bridge submodule (Half-bridge
Sub-module, HBSM) structural cost is low, technology maturation, and the flexible DC power transmission engineering that China has put into operation nearly all uses base
In the MMC structures of half-bridge submodule.When short trouble occurs for DC line, due to the electric discharge of submodule capacitance and AC system feedback
Energy effect, fault current can increase rapidly, threaten the safety of the equipment such as transverter, it is therefore necessary to disengagement failure electric current immediately.But
Since half-bridge submodule diode in the block can form the current path between exchange side and trouble point, so it does not possess excision event
Hinder the ability of electric current.
At present, in the method for handling MMC DC Line Faults, although tripping AC circuit breaker technology maturation, there is response speed
The shortcomings of degree is slow, failure recovery time is long；High voltage DC breaker is faced with drop-out voltage rank deficient height, and capacity is not big etc. enough
Technical problem is not yet applied in Practical Project；And by improving submodule topological structure, control submodule internal power electronics
The break-make of device blocks fault current, fast without mechanical switch action, system resume speed, have larger researching value and
Application prospect.
Full-bridge submodule, clamp Shuangzi module all have DC Line Fault blocking ability.The device count of full-bridge submodule is
Twice of half-bridge submodule, running wastage is higher.It clamps anti-for connecting a pair of of IGBT of two half-bridge structures in Shuangzi module
Parallel diode needs to be constantly in conducting state, the parameters such as through-current capability, running wastage, device junction temperature in normal operation
It is above other semiconductor devices.Therefore, it is necessary to comprehensive study performance more preferably sub-modular structures.
The content of the invention
In view of the above-mentioned problems, the utility model proposes a kind of clamped submodule of capacitance, the modular multilevels using it
Transverter；The clamped submodule of its capacitance power device in the block balanced can be turned on when submodule is in input and excision state；
There is direct fault current blocking ability using its modularization multi-level converter as submodule.
The utility model uses following technical scheme：A kind of clamped submodule of capacitance, including first to third transistor
T1~T3, capacitor C and first to the 3rd diode D1~D3；The positive terminal of capacitor C and the first transistor T1Collector phase
Even, and in the two junction submodule high-voltage output end M is drawn；The negative pole end of capacitor C and second transistor T2Emitter
It is connected；Third transistor T3Collector and second transistor T2Collector be connected, and the two junction draw submodule it is low
Press output terminal N；Third transistor T3Emitter and the first transistor T1Emitter be connected；First diode D1Anode and
One transistor T1Emitter connection；First diode D1Cathode and the first transistor T1Collector connection；Second diode D2
Anode and second transistor T2Emitter connection；Second diode D2Cathode and second transistor T2Collector connection；3rd
Diode D3Anode and third transistor T3Emitter connection；3rd diode D3Cathode and third transistor T3Collector
Connection.
In one embodiment of the utility model, first to third transistor T1~T3It is insulated gate bipolar transistor.
The utility model also provides a kind of modularization multi-level converter using the above-mentioned clamped submodule of capacitance, including
A, B, C three-phase；Contain upper and lower two bridge arm per phase；It is formed per bridge arm by the clamped sub-module cascade of N number of capacitance, the series connection one per bridge arm
A bridge arm reactor；N is the natural number not less than 1.
Preferably, first to third transistor T1~T3It is insulated gate bipolar transistor.
Compared with prior art, the clamped submodule of the capacitance of the utility model reduces 25% compared to full-bridge submodule
Power electronic devices, economy are more preferable；Three insulated gate bipolar transistors inside submodule are in submodule to be put into, cuts
ON time during except state is identical, without the device of special through-current capability, reduces cost of investment；It is clamped using capacitance
The modularization multi-level converter of submodule can block rapidly direct fault current.
Description of the drawings
Fig. 1 is the clamped sub-modular structure figure of capacitance of the utility model.
Fig. 2 is as the modularization multi-level converter of submodule using the clamped sub-modular structure of the utility model capacitance
Topology diagram.
Fig. 3 is that the fault current of the bipolar short trouble lower module multilevel converter of DC side blocks schematic diagram.
Fig. 4 is using modularization multi-level converter of the clamped sub-modular structure of capacitance of the utility model as submodule
Flexible direct current power transmission system bridge arm reactance afterflow equivalent circuit diagram after middle IGBT lockings.
Fig. 5 is the bipolar short trouble dc current waveform figure of DC side
Fig. 6 is the bipolar short trouble dc current waveform comparison diagram of three kinds of flexible direct current power transmission system DC sides.
Specific embodiment
Explanation is further explained to the utility model in the following with reference to the drawings and specific embodiments.
Fig. 1 is the clamped submodule of capacitance provided by the utility model, including first to third transistor T1~T3, capacitance
Device C and first to the 3rd diode D1~D3；The positive terminal of capacitor C and the first transistor T1Collector be connected, and in the two
Draw submodule high-voltage output end M in junction；The negative pole end of capacitor C and second transistor T2Emitter be connected；3rd is brilliant
Body pipe T3Collector and second transistor T2Collector be connected, and draw submodule low-voltage output N in the two junction；
Third transistor T3Emitter and the first transistor T1Emitter be connected；First diode D1Anode and the first transistor T1
Emitter connection；First diode D1Cathode and the first transistor T1Collector connection；Second diode D2Anode and second
Transistor T2Emitter connection；Second diode D2Cathode and second transistor T2Collector connection；3rd diode D3Sun
Pole and third transistor T3Emitter connection；3rd diode D3Cathode and third transistor T3Collector connection.
Preferably, first to third transistor T1~T3It is insulated gate bipolar transistor.
The utility model also provides a kind of modularization multi-level converter using the above-mentioned clamped submodule of capacitance, including
A, B, C three-phase；Contain upper and lower two bridge arm per phase；It is formed per bridge arm by the clamped sub-module cascade of N number of capacitance, the series connection one per bridge arm
A bridge arm reactor；N is the natural number not less than 1.Main circuit topology figure is referring to Fig. 2.
Capacitance clamped submodule has two kinds of operating statuses of input and excision when working normally.Work as T2It is open-minded, T1、T3During shut-off,
Submodule is in input state, and output level is+uc；Work as T2Shut-off, T1、T3When opening, submodule is in excision state, output
Level is 0.When submodule is in input state, iMN>When 0, current path is：M→C→D2→ N, capacitance charge；iMN<When 0, electricity
Logical circulation road is：N→T2→ C → M, capacitance electric discharge.When submodule is in excision state, iMN>When 0, current path is：M→ T1→
D3→ N, capacitance are bypassed；iMN<When 0, current path is：N→T3→D1→ M, capacitance are bypassed.
The clamped submodule of capacitance is applied to modularization multi-level converter, modularization multi-level converter includes A, B, C
Three-phase；Contain upper and lower two bridge arm per phase；It is formed per bridge arm by the clamped sub-module cascade of N number of capacitance, a bridge arm of connecting per bridge arm
Reactor；N is the natural number not less than 1；When modularization multi-level converter breaks down, fault current afterflow direction with
For diode positive direction on the contrary, high-impedance state is presented in circuit, the clamped submodule of capacitance is in locking operating status.
After direct-current short circuit failure occurs, all insulated gate bipolar transistors (IGBT) in transverter are latched, utilize electricity
The difference for holding voltage and ac line voltage forms backward voltage to block the feedback between exchange side and trouble point to series diode
It can access.It is analyzed by taking bipolar short trouble as an example.During the bipolar short trouble of generation, all IGBT in transverter are latched, but
There are still the energy regenerative accesses being made of AC power, bridge arm reactor, submodule capacitance, diode.It, can by taking A, B phase as an example
The access for the lateral trouble point energy regenerative of exchange that can be formed is as shown in Figure 3.
When A cross streams electric current is more than zero, from Fig. 3 a, fault current flows through A phase lower bridge arm reactance Lna, submodule capacitance
C, diode D2, trouble point, bridge arm diode D in B phases2, submodule capacitance, bridge arm reactance Lpb.If submodule after IGBT lockings
Capacitance voltage is uc', ac line voltage uab, diode D2Both ends forward voltage drop is ud2.Ignore bridge arm reactor pressure drop, circuit
Resistance, reactance pressure drop and trouble point residual voltage, can be obtained by Kirchhoff's second law：
Before failure occurs, modular multilevel (MMC) transverter alternating current-direct current side meets following dynamic relationship：
Wherein, ul-lFor ac line voltage, uk_peakFor ac phase voltage peak value, ω is the corresponding angular speed of fundamental wave power frequency,
ucFor the capacitance voltage before failure, m is modulation ratio.After failure occurs, before IGBT lockings, capacitance can be discharged by IGBT,
But since discharge time is very of short duration, it is believed that capacitance voltage constant, i.e. u of approximation before and after lockingc’≈ucIt can by (1) (2) (3) formula
：
Under normal conditions, system modulation compares m<1, therefore have：
From (5) formula, IGBT is latched rapidly after DC bipolar short trouble occurs, the son in fault current circuit
Module capacitance Voltage Series summation will be greater than the maximum of ac line voltage, the diode D to connect in circuit2Bear reversed electricity
Pressure, therefore not actually exist fault current path, that is, block the energy feed-in of the lateral trouble point of exchange.A cross streams electric currents
Fault current circuit is as shown in Figure 3b, similar when analyzing with electric current more than zero during less than zero.
Using modularization multi-level converter of the clamped sub-modular structure of capacitance provided by the utility model as submodule
The equivalent circuit of flexible direct current power transmission system bridge reactance afterflow is as shown in Figure 4 after middle IGBT lockings.Fault current afterflow direction with
On the contrary, high-impedance state is presented in circuit, the freewheeling path of fault current is blocked diode positive direction.Using full-bridge submodule and pincers
The MMC of position Shuangzi module is after IGBT lockings, and there are bridge arm reactors to capacitor in the equivalent circuit of flexible direct current system
The continuous current circuit of charging, therefore fault current decays to the MMC long of zero time submodule more clamped than use capacitance, therefore capacitance
Clamped submodule blocks the ability of direct fault current stronger.
The utility model is specifically described below by embodiment, it is necessary to which indicated herein is the present embodiment
For the utility model to be further described, it is impossible to the limitation to scope of protection of the utility model is interpreted as, the field
Person skilled in the art can make some nonessential modifications and adaptations according to the content of above-mentioned utility model.
Embodiment：
Certain uses the modularization multi-level converter flexible DC power transmission of the clamped submodule of capacitance provided by the utility model
The Major Systems parameter of system is as shown in table 1.Corresponding flexible DC power transmission system has been built in PSCAD/EMTDC simulation softwares
System model.
1 flexible direct current power transmission system major parameter of table
DC Line Fault electricity is blocked to verify as the modularization multi-level converter of submodule to have using the utility model
The ability of stream sets above-mentioned flexible direct current system to operate in normal condition first, and it is instantaneous that DC side then occurs at the 2.5s moment
Property positive and negative anodes short trouble.Consider the time delay of fault detection system, all submodules in setup module multilevel converter
The IGBT of block is all latched after 2ms occurs for failure, and flexible DC power transmission DC side current simulations waveform is as shown in Figure 5.From Fig. 5
It understands, moment occurs for failure, and direct fault current rises very rapidly up to higher value (about 5.8kA)；IGBT is latched after 2ms, at this time
Direct fault current is reduced to zero immediately, and illustrating can be effective as the modularization multi-level converter of submodule using the utility model
Block direct fault current.
Full-bridge submodule, pincers are relatively used using modularization multi-level converter of the utility model as submodule to compare
Position Shuangzi modular structure has stronger failure blocking ability as the modularization multi-level converter of submodule, in PSCAD/
It has been built respectively in EMTDC simulation softwares more as the modularization of submodule using full-bridge submodule, clamp Shuangzi modular structure
Level converter flexible direct current power transmission system, systematic parameter is using parameter in table 1.To using full-bridge submodule, clamp Shuangzi
Modular structure is set as the modularization multi-level converter flexible direct current power transmission system of submodule with being made using the utility model
For the identical failure of the flexible direct current power transmission system of the modularization multi-level converter of submodule, and son is made after identical delay
Mould IGBT lockings in the block.The corresponding direct fault current comparison of wave shape of three kinds of flexible direct current power transmission systems is as shown in Figure 6.From figure
6 as can be seen that be reduced to zero, followed by first using the direct fault current of the flexible direct current power transmission system of the clamped submodule of capacitance
Using the flexible direct current power transmission system of full-bridge submodule, it is finally using the flexible direct current power transmission system of clamp Shuangzi module, says
It is bright using the utility model as submodule modularization multi-level converter compared with using full-bridge submodule, clamp Shuangzi module
Modularization multi-level converter is stronger to the blocking ability of direct fault current.
The above are the preferred embodiment of the utility model, all changes made according to technical solutions of the utility model are produced
Function without departing from technical solutions of the utility model scope when, belong to the scope of protection of the utility model.
Claims (4)
1. a kind of clamped submodule of capacitance, it is characterised in that：Including first to third transistorT 1 ~T 3, capacitorCAnd first to
3rd diodeD 1~D 3；
CapacitorCPositive terminal and the first transistorT 1Collector be connected, and the two junction draw submodule High voltage output
EndM；CapacitorCNegative pole end and second transistorT 2Emitter be connected；Third transistorT 3Collector and second transistorT 2Collector be connected, and the two junction draw submodule low-voltage outputN；Third transistorT 3Emitter and first
TransistorT 1Emitter be connected；
First diodeD 1Anode and the first transistorT 1Emitter connection；First diodeD 1Cathode and the first transistorT 1's
Collector connects；Second diodeD 2Anode and second transistorT 2Emitter connection；Second diodeD 2Cathode and the second crystalline substance
Body pipeT 2Collector connection；3rd diodeD 3Anode and third transistorT 3Emitter connection；3rd diodeD 3Cathode
With third transistorT 3Collector connection.
2. the clamped submodule of capacitance according to claim 1, it is characterised in that：First to third transistorT 1 ~T 3It is exhausted
Edge grid bipolar transistor.
3. a kind of modularization multi-level converter for applying the clamped submodule of capacitance as described in claim 1, it is characterised in that：
Including A, B, C three-phase；Contain upper and lower two bridge arm per phase；It is formed per bridge arm by the clamped sub-module cascade of N number of capacitance, per bridge arm string
Join a bridge arm reactor；N is the natural number not less than 1.
4. modularization multi-level converter according to claim 3, it is characterised in that：First to third transistorT 1 ~T 3
For insulated gate bipolar transistor.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110247566A (en) * | 2019-07-05 | 2019-09-17 | 沈阳工业大学 | A kind of detection of the DC side failure based on MMC dissymmetric network and blocking-up method |
| CN112311214A (en) * | 2019-07-26 | 2021-02-02 | 南京南瑞继保电气有限公司 | Self-energy-discharging device, current conversion chain system, current converter, control method, equipment and medium |
-
2017
- 2017-10-31 CN CN201721424542.7U patent/CN207410245U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110247566A (en) * | 2019-07-05 | 2019-09-17 | 沈阳工业大学 | A kind of detection of the DC side failure based on MMC dissymmetric network and blocking-up method |
| CN110247566B (en) * | 2019-07-05 | 2021-04-13 | 沈阳工业大学 | Direct current side fault detection and blocking method based on MMC asymmetric network |
| CN112311214A (en) * | 2019-07-26 | 2021-02-02 | 南京南瑞继保电气有限公司 | Self-energy-discharging device, current conversion chain system, current converter, control method, equipment and medium |
| CN112311214B (en) * | 2019-07-26 | 2022-03-29 | 南京南瑞继保电气有限公司 | Self-energy-discharging device, current conversion chain system, current converter, control method, equipment and medium |
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