CN111200366A - MMC submodule topological structure of equivalent full-bridge submodule with direct-current fault blocking capability - Google Patents
MMC submodule topological structure of equivalent full-bridge submodule with direct-current fault blocking capability Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J3/00—Circuit arrangements for ac mains or ac distribution networks
- H02J3/36—Arrangements for transfer of electric power between ac networks via a high-tension dc link
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0067—Converter structures employing plural converter units, other than for parallel operation of the units on a single load
- H02M1/007—Plural converter units in cascade
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/60—Arrangements for transfer of electric power between AC networks or generators via a high voltage DC link [HVCD]
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Abstract
The invention discloses an MMC submodule topological structure of a direct-current fault blocking capability equivalent full-bridge submodule, which comprises a first output end, a second output end, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first diode, a second diode, a third diode, a fourth diode, a fifth diode, a sixth diode, a seventh diode, an eighth diode, a first voltage-stabilizing capacitor and a second voltage-stabilizing capacitor, wherein the first voltage-stabilizing capacitor, the first transistor, the second transistor, the first diode and the second diode form a first submodule; the second voltage-stabilizing capacitor, the third transistor, the fourth transistor, the third diode and the fourth diode form a second half-bridge submodule, the structure has the direct-current fault blocking capacity equal to that of a full-bridge submodule, fault current can be effectively blocked when a direct-current fault occurs, and the cost is low.
Description
Technical Field
The invention belongs to the technical field of flexible direct current transmission, and relates to an MMC sub-module topological structure of a direct current fault blocking capability equivalent full-bridge sub-module.
Background
In recent years, the flexible direct-current transmission technology becomes a hot point of research in the field of power transmission, and has a remarkable effect in promoting the development of new technologies such as large-scale wind power integration, urban power supply and island power supply, meeting the continuously increasing energy demand, promoting the clean and efficient utilization of energy and the like. The voltage source converters adopted in the existing flexible direct current transmission project mainly have three types: two-level voltage source converter, three-level voltage source converter, Modular Multilevel Converter (MMC). The voltage source converters of two levels and three levels all have the problem of capacitance voltage sharing and the problem that harmonic content is big, MMC can reduce the harmonic content of output alternating voltage through increasing submodule piece figure, improve the electric energy quality, and its transverter loss is little, becomes gentle first-selected of straight engineering.
The MMC module topology is generally formed by cascading a plurality of submodules having the same structure, and generally adopts a half-bridge submodule or a full-bridge submodule. An MMC module topological structure formed by cascading half-bridge sub-modules cannot effectively lock a direct current fault, and once the direct current fault occurs, power devices such as transistors and diodes can be burnt down due to flowing fault current; the full-bridge sub-module can block direct current faults, but the number of required transistors is large, and the cost is high. At present, many scholars propose improved sub-module topologies, and most of the improved sub-module topologies have the problem of weak direct current fault blocking capability, or the transistors are required to bear higher voltage during direct current fault, which brings difficulty to the selection of the transistors and increases the equipment cost.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides an MMC sub-module topological structure with the equivalent direct-current fault blocking capability of a full-bridge sub-module, the structure has the direct-current fault blocking capability equivalent to that of the full-bridge sub-module, can effectively block fault current when a direct-current fault occurs, and is low in cost.
In order to achieve the above object, the MMC submodule topology of the equivalent full-bridge submodule with direct-current fault blocking capability according to the present invention includes a first output terminal, a second output terminal, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first diode, a second diode, a third diode, a fourth diode, a fifth diode, a sixth diode, a seventh diode, an eighth diode, a first voltage-stabilizing capacitor and a second voltage-stabilizing capacitor, wherein the first voltage-stabilizing capacitor, the first transistor, the second transistor, the first diode and the second diode constitute a first half-bridge submodule; a second half-bridge submodule is formed by the second voltage-stabilizing capacitor, the third transistor, the fourth transistor, the third diode and the fourth diode;
the first output end is connected with an emitting electrode of the first transistor and a collecting electrode of the second transistor, an emitting electrode of the second transistor is connected with an emitting electrode of the fifth transistor and a negative electrode of the first voltage-stabilizing capacitor, a positive electrode of the first voltage-stabilizing capacitor is connected with a collecting electrode of the first transistor and a negative electrode of the seventh diode, a collecting electrode of the fifth transistor is connected with an emitting electrode of the sixth transistor, a positive electrode of the seventh diode and a negative electrode of the eighth diode, an emitting electrode of the sixth transistor is connected with a positive electrode of the second voltage-stabilizing capacitor and a collecting electrode of the third transistor, a emitting electrode of the third transistor is connected with a collecting electrode of the fourth transistor, and a emitting electrode of the fourth transistor is connected with a negative electrode of the second voltage-stabilizing capacitor and a positive electrode of the eighth diode;
the cathode of the first diode is connected with the collector of the first transistor, and the anode of the first diode is connected with the emitter of the first transistor;
the cathode of the second diode is connected with the collector of the second transistor, and the anode of the second diode is connected with the emitter of the second transistor;
the cathode of the third diode is connected with the collector of the third transistor, and the anode of the third diode is connected with the emitter of the third transistor;
the cathode of the fourth diode is connected with the collector of the fourth transistor, and the anode of the fourth diode is connected with the emitter of the fourth transistor;
the negative electrode of the fifth diode is connected with the collector of the fifth transistor, and the positive electrode of the fifth diode is connected with the emitter of the fifth transistor;
the cathode of the sixth diode is connected with the collector of the sixth transistor, and the anode of the sixth diode is connected with the emitter of the sixth transistor.
When the system works normally, the fifth transistor and the sixth transistor are in a conducting state, and working current sequentially passes through the fifth transistor and the sixth transistor; when a direct-current fault occurs in the system, the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor are closed, the first voltage-stabilizing capacitor and the second voltage-stabilizing capacitor are located on a fault loop, double blocking voltage is provided through the first voltage-stabilizing capacitor and the second voltage-stabilizing capacitor, so that fault current is inhibited, and the fault blocking capability of the topological structure of the MMC sub-module is equal to that of the full-bridge sub-module.
When the system has a direct current fault, the fifth transistor or the sixth transistor is closed.
The invention has the following beneficial effects:
when the MMC sub-module topological structure of the equivalent full-bridge sub-module with the direct-current fault blocking capability is in specific operation, when a system has a direct-current fault, the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor are closed, the first voltage stabilizing capacitor and the second voltage stabilizing capacitor are positioned on a fault loop, double blocking voltage is provided through the first voltage stabilizing capacitor and the second voltage stabilizing capacitor to inhibit fault current, and the fault blocking capability of the topological structure of the MMC sub-module is equal to that of the full-bridge sub-module, so that a power device in the topological structure is protected. Compared with a full-bridge submodule, the invention saves two transistors and diodes connected in anti-parallel with the transistors, two common diodes are used for replacing the transistors, and when the needed MMC submodule has more number, the economic cost can be obviously reduced.
Drawings
FIG. 1 is a topology diagram of the present invention;
FIG. 2 is a current path diagram of the sub-module when a forward operating current flows;
FIG. 3 is a diagram of the current path taken by the sub-module when a reverse operating current is flowing;
FIG. 4 is a fault current path diagram of the sub-module in the event of a DC fault;
FIG. 5 is a diagram of a simulation model of a flexible DC power transmission system;
FIG. 6 is an MMC topology diagram;
FIG. 7 is a waveform diagram of the active and reactive power transmitted by the system during normal operation;
FIG. 8 is a current diagram on the DC side during normal operation;
FIG. 9 is a voltage diagram of the bridge arm in normal operation;
FIG. 10 is a current diagram of the sub-module in normal operation;
FIG. 11 is a current diagram on the DC side of a DC fault;
FIG. 12 is a current diagram of the sub-modules at DC side fault;
fig. 13 is a diagram showing a fault current flowing through the diode VD7 at the time of a dc-side fault.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings:
referring to fig. 1, the MMC submodule topology of the full-bridge submodule with equivalent direct-current fault blocking capability according to the present invention includes a first output end a, a second output end B, a first transistor VT1, a second transistor VT2, a third transistor VT3, a fourth transistor VT4, a fifth transistor VT5, a sixth transistor VT6, a first diode VD1, a second diode VD2, a third diode VD3, a fourth diode VD4, a fifth diode VD5, a sixth diode VD6, a seventh diode VD7, an eighth diode VD8, a first voltage-stabilizing capacitor C1, and a second voltage-stabilizing capacitor C2, where the first voltage-stabilizing capacitor C1, the first VT transistor 1, the second transistor VT2, the first diode VD1, and the second diode VD2 constitute a first half-bridge submodule 1; a second half-bridge submodule 2 is formed by a second voltage-stabilizing capacitor C2, a third transistor VT3, a fourth transistor VT4, a third diode VD3 and a fourth diode VD 4; the first output end a is connected with an emitter of a first transistor VT1 and a collector of a second transistor VT2, an emitter of the second transistor VT2 is connected with an emitter of a fifth transistor VT5 and a cathode of a first voltage-stabilizing capacitor C1, an anode of a first voltage-stabilizing capacitor C1 is connected with a collector of a first transistor VT1 and a cathode of a seventh diode VD7, a collector of the fifth transistor VT5 is connected with an emitter of a sixth transistor VT6, an anode of a seventh diode VD7 and a cathode of an eighth diode VD8, an emitter of the sixth transistor VT6 is connected with an anode of a second voltage-stabilizing capacitor C2 and a collector of a third transistor VT3, an emitter of the third transistor 3 is connected with a collector of a fourth transistor VT4, and an emitter of the fourth transistor VT4 is connected with a cathode of a second voltage-stabilizing capacitor C2 and an anode of an eighth diode VD 8;
the cathode of the first diode VD1 is connected with the collector of the first transistor VT1, and the anode of the first diode VD1 is connected with the emitter of the first transistor VT 1; the cathode of the second diode VD2 is connected to the collector of the second transistor VT2, and the anode of the second diode VD2 is connected to the emitter of the second transistor VT 2; the cathode of the third diode VD3 is connected to the collector of the third transistor VT3, and the anode of the third diode VD3 is connected to the emitter of the third transistor VT 3; the cathode of the fourth diode VD4 is connected to the collector of the fourth transistor VT4, and the anode of the fourth diode VD4 is connected to the emitter of the fourth transistor VT 4; the cathode of the fifth diode VD5 is connected to the collector of the fifth transistor VT5, and the anode of the fifth diode VD5 is connected to the emitter of the fifth transistor VT 5; a cathode of the sixth diode VD6 is connected to a collector of the sixth transistor VT6, and an anode of the sixth diode VD6 is connected to an emitter of the sixth transistor VT 6.
When the system works normally, the fifth transistor VT5 and the sixth transistor VT6 are in a conducting state, and the working current passes through the fifth transistor VT5 and the sixth transistor VT6 in sequence; when a direct-current fault occurs in the system, the first transistor VT1, the second transistor VT2, the third transistor VT3, the fourth transistor VT4, the fifth transistor VT5 and the sixth transistor VT6 are closed, the first voltage-stabilizing capacitor C1 and the second voltage-stabilizing capacitor C2 are positioned on a fault loop, double blocking voltage is provided through the first voltage-stabilizing capacitor C1 and the second voltage-stabilizing capacitor C2 to suppress fault current, and the fault blocking capability of the MMC sub-module topological structure is equal to that of a full-bridge sub-module; when the system has a dc fault, the fifth transistor VT5 or the sixth transistor VT6 is turned off.
When the system works normally, the fifth transistor VT5 and the sixth transistor VT6 are always in a conducting state, the first transistor VT1 and the second transistor VT2 are turned on in turn, and the third transistor VT3 and the fourth transistor VT4 are turned on in turn. When the sub-module flows forward current and flows backward current, 4 working states exist respectively in the two half-bridge sub-modules. The voltage of two voltage-stabilizing capacitors is VdcTable 1 shows 4 operating states and output voltages respectively corresponding to the forward current and the reverse current.
TABLE 1
When the sub-module flows the forward working current, the corresponding current paths in the 4 working states are as shown in fig. 2.
1) The first transistor VT1 and the third transistor VT3 are turned on, the second transistor VT2 and the fourth transistor VT4 are turned off: the first output terminal a → the first diode VD1 → the first voltage-stabilizing capacitor C1 → the fifth diode VD5 → the sixth diode VD6 → the third transistor VT3 → the second output terminal B.
(2) The first transistor VT1 and the fourth transistor VT4 are turned on, the second transistor VT2 and the third transistor VT3 are turned off: the first output terminal a → the first diode VD1 → the first voltage-stabilizing capacitor C1 → the fifth diode VD5 → the sixth diode VD6 → the second voltage-stabilizing capacitor C2 → the fourth diode VD4 → the second output terminal B.
(3) The second transistor VT2 and the third transistor VT3 are turned on, and the first transistor VT1 and the fourth transistor VT4 are turned off: the first output terminal a → the second transistor VT2 → the fifth diode VD5 → the sixth diode VD6 → the third transistor VT3 → the second output terminal B.
(4) The second transistor VT2 and the fourth transistor VT4 are turned on, the first transistor VT1 and the third transistor VT3 are turned off: the first output terminal a → the second transistor VT2 → the fifth diode VD5 → the sixth diode VD6 → the second voltage stabilizing capacitor C2 → the fourth diode VD4 → the second output terminal B.
When the sub-modules flow the reverse working current, the corresponding current paths in the 4 working states are as shown in fig. 3.
(1) The first transistor VT1 and the third transistor VT3 are turned on, the second transistor VT2 and the fourth transistor VT4 are turned off: the second output terminal B → the third diode VD3 → the sixth transistor VT6 → the fifth transistor VT5 → the first voltage stabilizing capacitor C1 → the first transistor VT1 → the first output terminal a.
(2) The first transistor VT1 and the fourth transistor VT4 are turned on, the second transistor VT2 and the third transistor VT3 are turned off: the second output terminal B → the fourth transistor VT4 → the second voltage-stabilizing capacitor C2 → the sixth transistor VT6 → the fifth transistor VT5 → the first voltage-stabilizing capacitor C1 → the first transistor VT1 → the first output terminal a.
(3) The second transistor VT2 and the third transistor VT3 are turned on, and the first transistor VT1 and the fourth transistor VT4 are turned off: the second output terminal B → the third diode VD3 → the sixth transistor VT6 → the fifth transistor VT5 → the second diode VD2 → the first output terminal a.
(4) The second transistor VT2 and the fourth transistor VT4 are turned on, the first transistor VT1 and the third transistor VT3 are turned off: the second output terminal B → the fourth transistor VT4 → the second voltage-stabilizing capacitor C2 → the sixth transistor VT6 → the fifth transistor VT5 → the second diode VD2 → the first output terminal a.
When a dc fault occurs in the system, all transistors in the sub-modules are all turned off, and the fault current path is as shown in fig. 4.
(1) When the fault current is in a forward direction, the current path is as follows: the first output terminal a → the first diode VD1 → the first voltage-stabilizing capacitor C1 → the fifth diode VD5 → the sixth diode VD6 → the second voltage-stabilizing capacitor C2 → the fourth diode VD4 → the second output terminal B, and the voltage of the first output terminal a and the second output terminal B is 2V at this timedcFifth transistor VT5 and sixth transistor VT6The reverse voltage is the conduction voltage drop of the diode.
(2) When the fault current is in the reverse direction, the current path is as follows: the second output terminal B → the third diode VD3 → the second voltage-stabilizing capacitor C2 → the eighth diode VD8 → the seventh diode VD7 → the first voltage-stabilizing capacitor C1 → the second diode VD2 → the first output terminal a, and the voltage of the second output terminal B and the first output terminal a is-2VdcThe back voltage applied to the fifth transistor VT5 and the sixth transistor VT6 is Vdc。
Therefore, when a system has a direct-current fault, the two voltage-stabilizing capacitors are both positioned in a fault loop and can effectively block fault current, so that power devices in the system are protected. And in case of failure, the fifth transistor VT5 and the sixth transistor VT6 do not need to bear high back pressure, so that the transistors do not need to be distinguished from other transistors in the submodule, and additional cost is not increased.
Example one
A flexible direct current transmission system simulation model is built in MATLAB/Simulink, as shown in FIG. 5, the topology of the MMC converter station is as shown in FIG. 6, wherein each bridge arm comprises a sub-module number n which is 6, the sub-modules adopt the topological structure provided by the invention, and the flexible direct current transmission system simulation model parameters are as shown in the following table 2.
TABLE 2
When the system works normally, the active and reactive power waveform diagrams transmitted by the system are shown in fig. 7, the direct current is shown in fig. 8, the bridge arm voltage is shown in fig. 9, and the submodule current is shown in fig. 10. It can be seen that the system runs stably, the fluctuation of active power and reactive power is small, the fluctuation of direct current side current is small, the bridge arm voltage is close to sine, the sine and symmetry of submodule current are good, and the topology has good working performance.
In order to verify the direct current fault blocking capability of the invention, when t is 5s, a direct current fault is constructed, at the moment, a direct current side current is shown in fig. 11, a submodule current is shown in fig. 12, a fault current flowing through a seventh diode VD7 is shown in fig. 13, it can be seen that when a fault occurs on the direct current side, a reverse fault current flows through the seventh diode VD7 and an eighth diode VD8, both voltage stabilizing capacitors are in a fault loop, the submodule current is reduced to 0 within 0.15 milliseconds, and the direct current side current is reduced to zero within 2.5 milliseconds, so that direct current blocking is realized, which indicates that the invention has good direct current fault blocking capability, and can rapidly block the fault current, thereby protecting power devices therein.
Claims (3)
1. An MMC sub-module topological structure of a direct current fault blocking capability equivalent full-bridge sub-module, the circuit is characterized by comprising a first output end (A), a second output end (B), a first transistor (VT1), a second transistor (VT2), a third transistor (VT3), a fourth transistor (VT4), a fifth transistor (VT5), a sixth transistor (VT6), a first diode (VD1), a second diode (VD2), a third diode (VD3), a fourth diode (VD4), a fifth diode (VD5), a sixth diode (VD6), a seventh diode (VD7), an eighth diode (VD8), a first voltage-stabilizing capacitor (C1) and a second voltage-stabilizing capacitor (C2), the first half-bridge module (1) is composed of a first voltage-stabilizing capacitor (C1), a first transistor (VT1), a second transistor (VT2), a first diode (VD1) and a second diode (VD 2); a second half-bridge submodule (2) is formed by a second voltage-stabilizing capacitor (C2), a third transistor (VT3), a fourth transistor (VT4), a third diode (VD3) and a fourth diode (VD 4);
the first output end (A) is connected with an emitter of a first transistor (VT1) and a collector of a second transistor (VT2), an emitter of the second transistor (VT2) is connected with an emitter of a fifth transistor (VT5) and a cathode of a first voltage-stabilizing capacitor (C1), an anode of the first voltage-stabilizing capacitor (C1) is connected with a collector of the first transistor (VT1) and a cathode of a seventh diode (VD7), a collector of the fifth transistor (VT5) is connected with an emitter of a sixth transistor (VT6), the positive electrode of the seventh diode (VD7) is connected with the negative electrode of the eighth diode (VD8), the emitter of the sixth transistor (VT6) is connected with the positive electrode of the second voltage-stabilizing capacitor (C2) and the collector of the third transistor (VT3), the emitter of the third transistor (VT3) is connected with the collector of the fourth transistor (VT4), and the emitter of the fourth transistor (VT4) is connected with the negative electrode of the second voltage-stabilizing capacitor (C2) and the positive electrode of the eighth diode (VD 8);
the cathode of the first diode (VD1) is connected with the collector of the first transistor (VT1), and the anode of the first diode (VD1) is connected with the emitter of the first transistor (VT 1);
the cathode of the second diode (VD2) is connected with the collector of the second transistor (VT2), and the anode of the second diode (VD2) is connected with the emitter of the second transistor (VT 2);
the cathode of the third diode (VD3) is connected with the collector of the third transistor (VT3), and the anode of the third diode (VD3) is connected with the emitter of the third transistor (VT 3);
the cathode of the fourth diode (VD4) is connected with the collector of the fourth transistor (VT4), and the anode of the fourth diode (VD4) is connected with the emitter of the fourth transistor (VT 4);
the cathode of the fifth diode (VD5) is connected with the collector of the fifth transistor (VT5), and the anode of the fifth diode (VD5) is connected with the emitter of the fifth transistor (VT 5);
the cathode of the sixth diode (VD6) is connected to the collector of the sixth transistor (VT6), and the anode of the sixth diode (VD6) is connected to the emitter of the sixth transistor (VT 6).
2. The MMC sub-module topology of the DC fault blocking capability equivalent full-bridge sub-module of claim 1, wherein when the system is operating normally, the fifth transistor (VT5) and the sixth transistor (VT6) are in a conducting state, and the operating current passes through the fifth transistor (VT5) and the sixth transistor (VT6) in sequence; when a direct-current fault occurs in the system, the first transistor (VT1), the second transistor (VT2), the third transistor (VT3), the fourth transistor (VT4), the fifth transistor (VT5) and the sixth transistor (VT6) are turned off, the first voltage-stabilizing capacitor (C1) and the second voltage-stabilizing capacitor (C2) are located on a fault loop, double blocking voltage is provided through the first voltage-stabilizing capacitor (C1) and the second voltage-stabilizing capacitor (C2) to suppress fault current, and the fault blocking capability of the MMC sub-module topological structure is equal to that of a full-bridge sub-module.
3. The MMC sub-module topology of the DC fault blocking capability equivalent full-bridge sub-module of claim 1, wherein the fifth transistor (VT5) or the sixth transistor (VT6) is turned off when a DC fault occurs in the system.
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Application publication date: 20200526 |