CN204046460U - A kind of novel Modularized multi-level converter sub-module topology - Google Patents
A kind of novel Modularized multi-level converter sub-module topology Download PDFInfo
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- CN204046460U CN204046460U CN201420549153.7U CN201420549153U CN204046460U CN 204046460 U CN204046460 U CN 204046460U CN 201420549153 U CN201420549153 U CN 201420549153U CN 204046460 U CN204046460 U CN 204046460U
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- insulated gate
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Abstract
The utility model provides the submodule topological structure circuit of a kind of novel modularization multi-level converter for power transmission and distribution technical field.Its technical scheme is, described sub-module structure circuit comprises 3 insulated gate bipolar transistors, 2 reverse diodes, 2 identical capacitors and 1 H bridge construction.The utility model is applied in modular multi-electrical-level voltage source current converter, propose a kind of novel three level submodule topology, this topology can save the IGBT of 25% when realizing same level and exporting, simultaneously because single submodule can realize two level, thus the number of submodule also can along with minimizing, the overall volume of converter valve is reduced, reduces input cost and floor space.
Description
Technical field
The utility model relates to power transmission and distribution technical field, is specifically related to a kind of novel Modularized multi-level converter sub-module topology.
Background technology
In recent years, modularization multi-level converter (Modular multilevel converter, MMC) development rapidly, and oneself is through being successfully applied in HVDC (High Voltage Direct Current) transmission system (High Voltage Direct Current System, HVDC) field.MMC have employed a large amount of wholly-controled device insulated gate bipolar transistor IGBTs, this makes MMC-HVDC (ModularMultilevel Converter Based HVDC) have plurality of advantages, the flexible change of voltage and power grade can be realized by the series connection number adjusting submodule, and any level can be expanded to export, reduce the harmonic content of electromagnetic interference and output voltage, output voltage is very level and smooth and close to ideal sinusoidal waveform, therefore do not need Large Copacity alternating current filter in net side; The switching frequency of switching device is low, and switching loss is also just corresponding to be reduced; Because power dissipation is stored in each submodule electric capacity of brachium pontis by MMC topology, improve fault ride-through capacity, be very applicable to high voltage, powerful power supply occasion, have a extensive future.Half-bridge submodule (Half-Bridge Sub-Module, HBSM) structural circuit is the optional circuit structure of submodule of main MMC, because the loss of HBSM is little, cost is low, MMC-HVDC engineering nearly all is at present all is its circuit structure with semi-bridge type MMC (Half-Bridge MMC, HBMMC).But along with submodule drops into the increase of number, the cost of the converter constructed by semi-bridge type MMC increases, and the overall volume of converter also increases simultaneously thereupon.
Utility model content
For the shortcoming described by prior art background, the utility model provides a kind of novel Modularized multi-level converter sub-module topological structure circuit.
The utility model is achieved through the following technical solutions: a kind of novel Modularized multi-level converter sub-module topological structure circuit, it is characterized in that, described sub-module structure circuit comprises 3 insulated gate bipolar transistors (T1, T2, T3), 2 reverse diodes (D1, D2), 2 identical capacitor C1 and C2 and 1 H bridges be made up of 4 diodes (D3, D4, D5, D6);
Wherein, 2 described insulated gate bipolar transistors compose in parallel 2 groups of gate-controlled switches with corresponding 2 backward diodes respectively, its connected mode is that the collector electrode of insulated gate bipolar transistor and the negative electrode of backward diode are connected, and the emitter of insulated gate bipolar transistor and the anode of backward diode are connected;
In the negative electrode of the emitter of described insulated gate bipolar transistor T1 and the collector electrode of insulated gate bipolar transistor T2, backward diode D2, H bridge construction, the negative pole of the positive pole D6 of D3 is connected, and collector electrode and the capacitor C1 positive pole of insulated gate bipolar transistor T1 are connected;
In the collector electrode of described insulated gate bipolar transistor T3 and H bridge construction, the negative electrode of D3, D4 is connected, and in the emitter of insulated gate bipolar transistor T3 and H bridge construction, D5, D6 anode is connected;
The positive pole of described capacitor C1 is connected with the collector electrode of insulated gate bipolar transistor T1, the negative electrode of backward diode D1 respectively, and the negative pole of capacitor C1 is connected with the negative pole of the positive pole D5 of D4 in the positive pole of capacitor C2, H bridge construction respectively;
The positive pole of described capacitor C2 respectively in the negative pole of capacitor C1, H bridge construction the negative pole of the positive pole D5 of D4 be connected, the negative pole of capacitor C2 is connected with the emitter of insulated gate bipolar transistor T2, the anode of backward diode D2 respectively;
Described sub-module structure circuit level exports and comprises 3 kinds of level states.
Described sub-module structure circuit comprises 4 kinds of running statuses.
The beneficial effects of the utility model are, a kind of novel Modularized multi-level converter sub-module topological circuit is applied in modular multi-electrical-level voltage source current converter, compared to semi-bridge type MMC sub modular structure, the single submodule of the utility model can realize two level and export, this topology can save the IGBT of 25% when realizing same level and exporting, thus the use number of submodule also can, along with minimizing, make the overall volume of converter valve reduce, and reduces input cost and floor space.
Accompanying drawing explanation
Fig. 1 is the exemplary topology diagram of modularization multi-level converter MMC.
Fig. 2 is a kind of novel Modularized multi-level converter sub-module topological structure that the utility model provides.
Fig. 3 is the MMC converter circuit figure adopting the utility model sub-module structure circuit.
Fig. 4 is the direction of current flow under a kind of novel Modularized multi-level converter sub-module topological structure circuit steady-state operating condition that the utility model provides; A () represents state 1, submodule is in input state, exports 2 level; B () represents state 2, submodule is in excision state, exports 0 level; C () represents state 3, submodule is in input state, exports 1 level, and (d) represents state 4, and submodule is in blocking, exports 0 level or 2 level.
Each symbol in figure: SM in Fig. 1
1, SM
2..., SM
nto represent in MMC brachium pontis the 1st, 2 ..., N number of sub-module structure circuit, Ls represents brachium pontis reactor, U
dcrepresent the voltage difference between MMC both positive and negative polarity DC bus, P is positive DC bus, and N is negative DC bus.
In Fig. 2, TI, T2, T3 represent 3 insulated gate bipolar transistors respectively, and D1, D2 represent 2 backward diodes, U
smrepresent submodule output voltage, i
smrepresent and flow into the electric current of sub-module structure circuit, C1 represents first capacitor in submodule, and C2 represents second capacitor in submodule, D3, D4, D5, D6,4 diodes for composition H bridge.
Symbol in Fig. 3 with Fig. 4 is identical with meaning in Fig. 1 with Fig. 2.
Embodiment
By reference to the accompanying drawings, preferred embodiment is described in detail.
Fig. 1 is the exemplary topology diagram of modularization multi-level converter MMC.In Fig. 1, the topological structure of modular multi-electrical-level voltage source current converter (MMC), often have upper and lower two brachium pontis mutually, each brachium pontis is made up of N number of tandem circuit.
Fig. 2 is a kind of novel Modularized multi-level converter sub-module topological structure circuit diagram that the utility model provides.In Fig. 2, described sub-module structure circuit comprises 3 insulated gate bipolar transistors (T1, T2, T3), 2 reverse diodes (D1, D2), 2 identical capacitor C1 and C2 and 1 H bridges be made up of 4 diodes (D3, D4, D5, D6);
Wherein, 2 described insulated gate bipolar transistors compose in parallel 2 groups of gate-controlled switches with corresponding 2 backward diodes respectively, its connected mode is that the collector electrode of insulated gate bipolar transistor and the negative electrode of backward diode are connected, and the emitter of insulated gate bipolar transistor and the anode of backward diode are connected;
In the negative electrode of the emitter of described insulated gate bipolar transistor T1 and the collector electrode of insulated gate bipolar transistor T2, backward diode D2, H bridge construction, the negative pole of the positive pole D6 of D3 is connected, and collector electrode and the capacitor C1 positive pole of insulated gate bipolar transistor T1 are connected;
In the collector electrode of described insulated gate bipolar transistor T3 and H bridge construction, the negative electrode of D3, D4 is connected, and in the emitter of insulated gate bipolar transistor T3 and H bridge construction, D5, D6 anode is connected;
The positive pole of described capacitor C1 respectively with the negative electrode of the collector electrode of insulated gate bipolar transistor T1, backward diode D1, be connected, the negative pole of capacitor C1 is connected with the negative pole of the positive pole D5 of D4 in the positive pole of capacitor C2, H bridge construction respectively;
The positive pole of described capacitor C2 respectively in the negative pole of capacitor C1, H bridge construction the negative pole of the positive pole D5 of D4 be connected, the negative pole of capacitor C2 is connected with the emitter of insulated gate bipolar transistor T2, the anode of backward diode D2 respectively;
Fig. 3 is the MMC converter circuit figure adopting the utility model structural circuit, adopts the utility model structural circuit can realize adopting the function of half-bridge sub-module structure circuit HBMMC equally.
Fig. 4 is direction of current flow figure under a kind of novel Modularized multi-level converter sub-module structural circuit stable situation that the utility model provides.The structural circuit that the utility model provides has 4 kinds of running statuses under steady state conditions, can produce 3 kinds of level states; Now analyze 4 kinds of running statuses, state 1: insulated gate bipolar transistor T1 is open-minded, T2 and T3 turns off, and electric current now still can two-way flow.When electric current flows from positive bus-bar to ac output end direction, electric current progressively can flow to ac output end from diode D1 through submodule two blocks of electric capacity, and now submodule is charged; When electric current flows from ac output end to positive direct-current generatrix direction, electric current can progressively flow to positive direct-current bus from two of each submodule block electric capacity through T1, now submodule capacitor discharge.This operating state, electric current can two-way flow, and tube current from what direction does not flow, and submodule output always draws submodule capacitor voltage; Two blocks of electric capacity in submodule can simultaneously discharge and recharge, and this depends on sense of current;
State 2: insulated gate bipolar transistor T2 is open-minded, T1 and T3 turns off, now electric current still can two-way flow, when electric current flows from positive direct-current bus to ac output end direction, electric current progressively can flow to ac output end from T2 without submodule two blocks of electric capacity, and capacitance voltage is now unaffected; When electric current flows from ac output end direction to positive direct-current generatrix direction, electric current can progressively flow to positive direct-current generatrix direction from the diode D2 below separately without submodule electric capacity, and now the electric capacity of submodule is also unaffected;
State 3: insulated gate bipolar transistor T3 is open-minded, T1 and T2 turns off, and electric current still can two-way flow.When electric current flows from positive direct-current bus to ac output end direction, electric current can progressively flow to output (although electric current also can circulate from diode VD1, can select the path that voltage is low) from T3 through electric capacity C2, and now electric capacity C2 charges; When electric current flows from ac output end direction to positive direct-current generatrix direction, electric current can progressively flow to positive direct-current bus from T3 through electric capacity, and now electric capacity C2 discharges.This operating state, electric current can two-way flow, and tube current all can not flow through T3 from that direction, and this module is used for independent control capacitance C2, plays a very important role for the voltage maintaining electric capacity C1, C2;
State 4: insulated gate bipolar transistor T1, T2 and T3 turn off, i.e. blocking, there will not be this kind of state in normal state, and not excessive system is in firm startup, or three IGBT meeting lockings during some malfunction; When electric current flows from positive bus-bar direction to ac output end, electric current progressively can flow to ac output end, now capacitor charging from sustained diode 1 above through two blocks of electric capacity of submodule; When electric current flows from ac output end to positive bus-bar direction, electric current can progressively flow to interchange positive bus-bar direction from each sustained diode 2 below without capacitor charging, and submodule electric capacity is now the state for being bypassed.
The above embodiment only have expressed several execution mode of the present utility model, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the utility model the scope of the claims.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection range of the present utility model.Therefore, the protection range of the utility model patent should be as the criterion with claims.
Claims (3)
1. a novel Modularized multi-level converter sub-module topological structure circuit, it is characterized in that, described sub-module structure circuit comprises 3 insulated gate bipolar transistors (T1, T2, T3), 2 reverse diodes (D1, D2), 2 identical capacitor C1 and C2 and 1 H bridges be made up of 4 diodes (D3, D4, D5, D6);
Wherein, 2 described insulated gate bipolar transistors compose in parallel 2 groups of gate-controlled switches with corresponding 2 backward diodes respectively, its connected mode is that the collector electrode of insulated gate bipolar transistor and the negative electrode of backward diode are connected, and the emitter of insulated gate bipolar transistor and the anode of backward diode are connected;
In the negative electrode of the emitter of described insulated gate bipolar transistor T1 and the collector electrode of insulated gate bipolar transistor T2, backward diode D2, H bridge construction, the negative pole of the positive pole D6 of D3 is connected, and collector electrode and the capacitor C1 positive pole of insulated gate bipolar transistor T1 are connected;
In the collector electrode of described insulated gate bipolar transistor T3 and H bridge construction, the negative electrode of D3, D4 is connected, and in the emitter of insulated gate bipolar transistor T3 and H bridge construction, D5, D6 anode is connected;
The positive pole of described capacitor C1 is connected with the collector electrode of insulated gate bipolar transistor T1, the negative electrode of backward diode D1 respectively, and the negative pole of capacitor C1 is connected with the negative pole of the positive pole D5 of D4 in the positive pole of capacitor C2, H bridge construction respectively;
The positive pole of described capacitor C2 respectively in the negative pole of capacitor C1, H bridge construction the negative pole of the positive pole D5 of D4 be connected, the negative pole of capacitor C2 is connected with the emitter of insulated gate bipolar transistor T2, the anode of backward diode D2 respectively.
2. a kind of novel Modularized multi-level converter sub-module topological structure circuit according to claim 1, is characterized in that, described sub-module structure circuit level exports and comprises 3 kinds of level states.
3. a kind of novel Modularized multi-level converter sub-module topological structure circuit according to claim 1, it is characterized in that, described sub-module structure circuit comprises 4 kinds of running statuses.
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| CN201420549153.7U CN204046460U (en) | 2014-09-23 | 2014-09-23 | A kind of novel Modularized multi-level converter sub-module topology |
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| CN201420549153.7U CN204046460U (en) | 2014-09-23 | 2014-09-23 | A kind of novel Modularized multi-level converter sub-module topology |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105553314A (en) * | 2015-12-21 | 2016-05-04 | 哈尔滨工业大学 | Hybrid modular multilevel converter topological structure based on three-level submodules and two-level submodules |
| CN106357138A (en) * | 2016-11-14 | 2017-01-25 | 国网江苏省电力公司经济技术研究院 | Rectifying circuit for ship shore power system |
| CN107370365A (en) * | 2017-08-02 | 2017-11-21 | 哈尔滨工业大学 | D.C. high voltage transmission DC DC converters and the method that voltage discharge and recharge is realized using the converter |
| CN112968588A (en) * | 2021-02-05 | 2021-06-15 | 中国矿业大学 | Universal multi-level topological structure |
| CN113300622A (en) * | 2021-04-14 | 2021-08-24 | 昆明理工大学 | Five-level clamping cross type submodule topological structure of modular multilevel converter |
-
2014
- 2014-09-23 CN CN201420549153.7U patent/CN204046460U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105553314A (en) * | 2015-12-21 | 2016-05-04 | 哈尔滨工业大学 | Hybrid modular multilevel converter topological structure based on three-level submodules and two-level submodules |
| CN106357138A (en) * | 2016-11-14 | 2017-01-25 | 国网江苏省电力公司经济技术研究院 | Rectifying circuit for ship shore power system |
| CN107370365A (en) * | 2017-08-02 | 2017-11-21 | 哈尔滨工业大学 | D.C. high voltage transmission DC DC converters and the method that voltage discharge and recharge is realized using the converter |
| CN112968588A (en) * | 2021-02-05 | 2021-06-15 | 中国矿业大学 | Universal multi-level topological structure |
| CN113300622A (en) * | 2021-04-14 | 2021-08-24 | 昆明理工大学 | Five-level clamping cross type submodule topological structure of modular multilevel converter |
| CN113300622B (en) * | 2021-04-14 | 2023-11-17 | 昆明理工大学 | Five-level clamping cross type sub-module topological structure of modularized multi-level converter |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141224 Termination date: 20150923 |
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| EXPY | Termination of patent right or utility model |