CN104037733A - Direct current fault isolation type flexible direct current transmission converter station subelement topology - Google Patents
Direct current fault isolation type flexible direct current transmission converter station subelement topology Download PDFInfo
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- CN104037733A CN104037733A CN201410243027.3A CN201410243027A CN104037733A CN 104037733 A CN104037733 A CN 104037733A CN 201410243027 A CN201410243027 A CN 201410243027A CN 104037733 A CN104037733 A CN 104037733A
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Abstract
The invention discloses a direct current fault isolation type flexible direct current transmission converter station subelement topology, comprising a first capacitor set C1, a second capacitor set C2, four full-controlled semiconductor devices T1, T2, T3 and T4 and a fault isolation combined circuit (7). The first full-controlled semiconductor device (T1) and the second full-controlled semiconductor device (T2) are connected with the first capacitor set (C1) to form a half-bridge subelement, and the third full-controlled semiconductor device (T3) and the fourth full-controlled semiconductor device (T4) are connected with the second capacitor set (C1) to form a half-bridge subelement. Six leading-out terminals (11, 12, 13, 14, 15, 16) of the fault isolation combined circuit (7) are respectively connected with the anode (1) and cathode (2) of the first capacitor set (C1), the anode (3) and cathode (4) of the second capacitor set (C2), the joint point (5) of T1 and T2 and the joint point (6) of T3 and T4.
Description
Technical field
The present invention relates to a kind of DC Line Fault isolated form flexible DC power transmission current conversion station subelement.
Background technology
Due to the advantage of the direct current transportation uniqueness based on voltage source conversion, the fields such as it is grid-connected at cleaning new energy, city power transmission and distribution capacity-increasing transformation, marine island load power transmission have broad application prospects.Based on modularization multi-level converter (modular multilevel converter, MMC) owing to adopting the form of half-bridge submodule cascade, have and device is unanimously triggered to the plurality of advantages such as dynamic voltage balancing requirement is low, favorable expandability, output voltage waveforms quality is high, switching frequency is low, running wastage is low, become the main flow trend that current converter is selected.Yet there is the inherent shortcoming that cannot effectively process DC Line Fault in this structure.When DC side breaks down, full-controlled switch device antiparallel fly-wheel diode easily form the energy that fault point is directly communicated with AC system and be fed to loop, cannot rely on merely converter to move the removing of DC side fault current.The VSC-HVDC engineering having put into operation at present adopts cable laying circuit mostly, to reduce DC Line Fault probability of happening, but involve great expense, deficiency in economic performance.
Utilize converter self to control the self-cleaning of realizing DC side fault, without plant equipment action, therefore system recovery is very fast, this technology has been widely used in traditional HVDC Transmission Technology, by forcing phase shift to eliminate fast arc road electric current.Searching has the novel converter of DC Line Fault ride-through capability, and this is the study hotspot of academic circles at present and industrial quarters.ALSTOM companies in 2010 have proposed the hybrid converter of multiple combination tradition two level converters and MMC design feature on international conference on large HV electric systems, and its bridge arm alternate conduction multilevel converter and Mixed cascading multilevel converter all have DC Line Fault ride-through capability.But control comparatively complexity, the equilibrium of subelement capacitance voltage is difficulty comparatively.Adopt full-bridge submodule (full bridge sub-module, FBSM) although also there is direct current locking function, while normally moving loss larger, and current conversion station cost significantly increases.
Summary of the invention
The object of the invention is to overcome prior art deficiency, propose a kind of new DC Line Fault isolated form flexible DC power transmission current conversion station subelement topology.The present invention can make whole current conversion station when possessing DC side troubleshooting capability, reduces the wastage as far as possible, and can reduce current conversion station construction cost while normally moving.
DC Line Fault isolated form flexible DC power transmission current conversion station subelement of the present invention can be by the first capacitance group, the second capacitance group, and four full-control type semiconductor device, and Fault Isolation combinational circuit composition, its connected mode is as follows:
The positive pole of the first capacitance group is connected with the collector electrode of the first full-control type semiconductor device; The emitter of the first full-control type semiconductor device is connected with the collector electrode of the second full-control type semiconductor device, as the first full-control type device tie point; The emitter of the second full-control type semiconductor device is connected with the negative pole of the first capacitance group; The positive pole of the second capacitance group is connected with the collector electrode of the 3rd full-control type semiconductor device; The emitter of the 3rd full-control type semiconductor device is connected with the collector electrode of the 4th full-control type semiconductor device, as the second full-control type device tie point; The emitter of the 4th full-control type semiconductor device is connected with the negative pole of the second capacitance group.
The first leading-out terminal of Fault Isolation combinational circuit is connected with the positive pole of the first capacitance group, the second leading-out terminal of Fault Isolation combinational circuit is connected with the negative pole of the first capacitance group, three terminal of Fault Isolation combinational circuit is connected with the positive pole of the second capacitance group, the 4th leading-out terminal of Fault Isolation combinational circuit is connected with the negative pole of the second capacitance group, the 5th leading-out terminal of Fault Isolation combinational circuit is connected with the first full-control type device tie point, and the 5th leading-out terminal of Fault Isolation combinational circuit is connected with the second full-control type device tie point.The 7th terminal of Fault Isolation combinational circuit is as the first leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement, and the 8th terminal of Fault Isolation combinational circuit is as the second leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement.
When described subelement is normally worked, when the first full-control type semiconductor device turn-offs, the second full-control type semiconductor device is open-minded, the 3rd full-control type semiconductor device is open-minded, when the 4th full-control type semiconductor device turn-offs, between described subelement the first leading-out terminal and the second leading-out terminal, voltage is not place in circuit of 0, the first capacitance group and the second capacitance group.
When the first full-control type semiconductor device turn-offs, the second full-control type semiconductor device is open-minded, the 3rd full-control type semiconductor device turn-offs, and when the 4th full-control type semiconductor device is opened, between described subelement the first leading-out terminal and the second leading-out terminal, voltage is the second capacitance group both end voltage; The first capacitance group is place in circuit not.
When the first full-control type semiconductor device open-minded, the second full-control type semiconductor device turn-offs, the 3rd full-control type semiconductor device turn-offs, and when the 4th full-control type semiconductor device is opened, between described subelement the first leading-out terminal and the second leading-out terminal, voltage is the first capacitance group both end voltage; The second capacitance group is place in circuit not.
When the first full-control type semiconductor device open-minded, the second full-control type semiconductor device turn-offs, the 3rd full-control type semiconductor device is open-minded, when the 4th full-control type semiconductor device turn-offs, between described subelement the first leading-out terminal and the second leading-out terminal, voltage is the first capacitance group and the second capacitance group both end voltage sum.
During described subelement locking, according to the difference of Fault Isolation combinational circuit structure, operation principle is also different.
Described Fault Isolation combinational circuit can be comprised of the first diode (led) module and the 6th full-control type semiconductor device, also can be formed by the second diode (led) module and the 5th full-control type semiconductor device, also can be formed by the first diode (led) module and the 5th full-control type semiconductor device, also can be formed by the second diode (led) module and the 6th full-control type semiconductor device, also can be formed by the first diode (led) module, the second diode (led) module, the 5th full-control type semiconductor device and the 6th full-control type semiconductor device.
When described Fault Isolation combinational circuit is by the first diode (led) module, the second diode (led) module, the 5th full-control type semiconductor device, when the 6th full-control type semiconductor device forms, the negative electrode of the first diode (led) module is connected with the first terminal of Fault Isolation combinational circuit, the anode of the first diode (led) module is connected with the collector electrode of the 5th full-control type semiconductor device, the emitter of the 5th full-control type semiconductor device is connected with the second terminal of Fault Isolation combinational circuit, the collector electrode of the 6th full-control type semiconductor device is connected with the 3rd terminal of Fault Isolation combinational circuit, the emitter of the 6th full-control type semiconductor device is connected with the negative electrode of the second diode (led) module, the anode of the second diode (led) module is connected with the 4th terminal of Fault Isolation combinational circuit.The emitter of the 6th full-control type semiconductor device is connected with the collector electrode of the 5th full-control type semiconductor device.The Five-terminals of Fault Isolation combinational circuit is connected with the 7th terminal of Fault Isolation combinational circuit, and the 6th terminal of Fault Isolation combinational circuit is connected with the 8th terminal.After the locking of all full-control type semiconductor device, when electric current flows into from described subelement the first leading-out terminal, the first capacitance group, the second capacitance group forward-, series place in circuit, the first capacitance group both end voltage and the second capacitance group both end voltage sum form back electromotive force, blocking-up inflow current.When electric current flows into from described subelement the second leading-out terminal, the first capacitance group, the second capacitance group forward-, series place in circuit, the first capacitance group both end voltage and the second capacitance group both end voltage sum form back electromotive force, blocking-up inflow current.
When described Fault Isolation combinational circuit is comprised of the first diode (led) module and the 6th full-control type semiconductor device, the emitter of the 6th full-control type semiconductor device is connected with the Five-terminals of Fault Isolation combinational circuit, and the collector electrode of the 6th full-control type semiconductor device is connected with the 3rd terminal of Fault Isolation combinational circuit.The negative electrode of the first diode (led) module is connected with the first terminal of Fault Isolation combinational circuit, and the anode of the first diode (led) module is connected with the 4th terminal of Fault Isolation combinational circuit.Under this connected mode, the first terminal of Fault Isolation combinational circuit is connected with the 7th terminal of Fault Isolation combinational circuit, and the 6th terminal of Fault Isolation combinational circuit is connected with the 8th terminal.The second terminal of Fault Isolation combinational circuit is vacant.After the locking of all full-control type semiconductor device, when electric current flows into from described subelement the first leading-out terminal, the first capacitance group, the second capacitance group forward-, series place in circuit, the first capacitance group both end voltage and the second capacitance group both end voltage sum form back electromotive force, blocking-up inflow current.When electric current flows into from described subelement the second leading-out terminal, the first capacitance group, the second capacitance group forward-, series place in circuit, the first capacitance group bypass, the second capacitance group forward place in circuit, the second capacitance group both end voltage forms back electromotive force, blocking-up inflow current.
When described Fault Isolation combinational circuit is comprised of the 5th full-control type semiconductor device, the second diode (led) module.The emitter of the 5th full-control type semiconductor device is connected with the second terminal of Fault Isolation combinational circuit, and the collector electrode of the 5th full-control type semiconductor device is connected with the 3rd terminal of Fault Isolation combinational circuit.The negative electrode of the second diode (led) module is connected with the first terminal of Fault Isolation combinational circuit, and the anode of the first diode (led) module is connected with the 4th terminal of Fault Isolation combinational circuit.The Five-terminals of Fault Isolation combinational circuit is connected with the 7th terminal of Fault Isolation combinational circuit, and the 4th terminal of Fault Isolation combinational circuit is connected with the 8th terminal.The 3rd terminal of Fault Isolation combinational circuit is vacant.After the locking of all full-control type semiconductor device, when electric current flows into from described subelement the first leading-out terminal, the first capacitance group, the second capacitance group forward-, series place in circuit, the first capacitance group both end voltage and the second capacitance group both end voltage sum form back electromotive force, blocking-up inflow current.When electric current flows into from described subelement the second leading-out terminal, the second capacitance group bypass, the first capacitance group forward place in circuit, the first capacitance group both end voltage forms back electromotive force, blocking-up inflow current.
This DC Line Fault isolated form flexible DC power transmission current conversion station subelement topology also can be only by the first capacitance group, the first full-control type semiconductor device, the second full-control type semiconductor device and Fault Isolation the electric circuit constitute; The positive pole of the first capacitance group is connected with the collector electrode of the first full-control type semiconductor device; The emitter of the first full-control type semiconductor device (T1) is connected with the collector electrode of the second full-control type semiconductor device, as the first full-control type device tie point; The emitter of the second full-control type semiconductor device is connected with the negative pole of the first capacitance group.
The first leading-out terminal of described Fault Isolation combinational circuit is connected with the positive pole of the first capacitance group, the second leading-out terminal of Fault Isolation combinational circuit is connected with the negative pole of the first capacitance group, the 5th leading-out terminal of Fault Isolation combinational circuit is connected with the first full-control type device tie point, the 7th terminal of Fault Isolation combinational circuit is as the first leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement, and the 8th terminal of Fault Isolation combinational circuit is as the second leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement.
Described Fault Isolation combinational circuit is comprised of the first diode and the 5th full-control type semiconductor device; The negative electrode of the first diode is connected with the first terminal of Fault Isolation combinational circuit, the anode of the first diode is connected with the collector electrode of the 5th full-control type semiconductor device, and the emitter of the 5th full-control type semiconductor device is connected with the second terminal of Fault Isolation combinational circuit.
The Five-terminals of described Fault Isolation combinational circuit is connected with the 7th terminal of Fault Isolation combinational circuit, and the 8th terminal of Fault Isolation combinational circuit is connected with the collector electrode of the 5th full-control type semiconductor device; The 3rd terminal of Fault Isolation combinational circuit, the 4th terminal, the 6th terminal are vacant.After the locking of all full-control type semiconductor device, when electric current flows into from described subelement the first leading-out terminal, the first capacitance group forward place in circuit, the first capacitance group both end voltage forms back electromotive force, blocking-up inflow current.When electric current flows into from described subelement the second leading-out terminal, the first capacitance group forward place in circuit, the first capacitance group both end voltage forms back electromotive force, blocking-up inflow current.
This DC Line Fault isolated form flexible DC power transmission current conversion station subelement topology also can be only by the second capacitance group, the 3rd full-control type semiconductor device, the 4th full-control type semiconductor device and Fault Isolation the electric circuit constitute; The positive pole of the second capacitance group is connected with the collector electrode of the 3rd full-control type semiconductor device; The emitter of the 3rd full-control type semiconductor device is connected with the collector electrode of the 4th full-control type semiconductor device, as the second full-control type device tie point; The emitter of the 4th full-control type semiconductor device is connected with the negative pole of the second capacitance group.
Three terminal of Fault Isolation combinational circuit is connected with the positive pole of the second capacitance group, the 4th leading-out terminal of Fault Isolation combinational circuit is connected with the negative pole of the second capacitance group, and the 5th leading-out terminal of Fault Isolation combinational circuit is connected with the second full-control type device tie point; The 7th terminal of Fault Isolation combinational circuit is as the first leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement, and the 8th terminal of Fault Isolation combinational circuit is as the second leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement.
Fault Isolation circuit is comprised of the 6th full-control type semiconductor device, the second diode (led) module; The collector electrode of the 6th full-control type semiconductor device is connected with the 3rd terminal of Fault Isolation combinational circuit, the emitter of the 6th full-control type semiconductor device is connected with the negative electrode of the second diode, and the anode of the second diode is connected with the 4th terminal of Fault Isolation combinational circuit.
The 6th terminal of described Fault Isolation combinational circuit is connected with the 8th terminal of Fault Isolation combinational circuit, and the 7th terminal of Fault Isolation combinational circuit is connected with the emitter of the 6th full-control type semiconductor device; The first terminal of Fault Isolation combinational circuit, the second terminal, Five-terminals are vacant.After the locking of all full-control type semiconductor device, when electric current flows into from described subelement the first leading-out terminal, the second capacitance group forward place in circuit, the second capacitance group both end voltage forms back electromotive force, blocking-up inflow current.When electric current flows into from described subelement the second leading-out terminal, the second capacitance group forward place in circuit, the second capacitance group both end voltage forms back electromotive force, blocking-up inflow current.
The first diode (led) module in described Fault Isolation combinational circuit and the second diode (led) module are by a diode and b resistance, and c electric capacity, and d inductance be composed in series together, a is more than or equal to 1 integer, and b, c, d are the integer that is more than or equal to 0.
Under normal operating condition, due to the reverse blocking voltage of diode, electric current can not flow through diode.When fault occurs, if the anode of the diode of electric current from the first diode (led) module or the second diode (led) module flows through to negative electrode, inductance, resistance and the electric capacity in the first diode (led) module or the second diode (led) module all can seal in circuit.The resistance fault energy that can be used for dissipating, inductance can be used for suppressing fault current climbing speed, and electric capacity is charged by fault current, can increase the equivalent capacity voltage that seals in circuit, thereby contributes to block fault current.
Flexible DC power transmission current conversion station brachium pontis is comprised of m described DC Line Fault isolated form flexible DC power transmission current conversion station subelement and the cascade of n semi-bridge type subelement, and m is more than or equal to 1 integer, and n is more than or equal to 0 integer.
Described six full-control type semiconductor device are composed in series by the IGBT of at least one, also can be composed in series by the full-control type device with anti-paralleled diode of at least one other types GTO for example, IGCT etc.
The first described capacitance group, the second capacitance group can or compose in parallel by one or more capacitor's seriess.Described capacitance group can be added the adjunct circuit unit such as bleeder resistance, pre-charge circuit.
Advantage of the present invention:
A. compare with half-bridge MMC subelement, possess DC side troubleshooting capability;
B. compare with full-bridge MMC subelement, cost significantly reduces;
C. compare with full-bridge MMC subelement, loss significantly reduces.
Accompanying drawing explanation
Fig. 1 electrical block diagram of the present invention;
The circuit theory diagrams of Fig. 2 embodiment of the present invention 1;
The circuit theory diagrams of Fig. 3 embodiment of the present invention 2;
The circuit theory diagrams of Fig. 4 embodiment of the present invention 3;
The circuit theory diagrams of Fig. 5 embodiment of the present invention 4;
The circuit theory diagrams of Fig. 6 embodiment of the present invention 5;
Fig. 7 the present invention and semi-bridge type subelement form the embodiment schematic diagram of converter bridge arm jointly;
The circuit theory diagrams of Fig. 8 embodiment of the present invention 7;
The circuit theory diagrams of Fig. 9 embodiment of the present invention 8;
The circuit theory diagrams of Figure 10 embodiment of the present invention 9;
The circuit theory diagrams of Figure 11 embodiment of the present invention 10.
Embodiment
Below in conjunction with the drawings and the specific embodiments, the invention will be further described.
As shown in Figure 1, DC Line Fault isolated form flexible DC power transmission current conversion station subelement of the present invention is by the first capacitance group C1, the second capacitance group C2, and four full-control type semiconductor device T1, T2, T3, T4, and Fault Isolation combinational circuit 7 forms; The positive pole 1 of the first capacitance group C1 is connected with the collector electrode of the first full-control type semiconductor device T1; The emitter of the first full-control type semiconductor device T1 is connected with the collector electrode of the second full-control type semiconductor device T2, as the first full-control type device tie point 5; The second emitter of full-control type semiconductor device T2 and the negative pole 2 of the first capacitance group C1 are connected; The positive pole 3 of the second capacitance group C2 is connected with the collector electrode of the 3rd full-control type semiconductor device T3; The emitter of the 3rd full-control type semiconductor device T3 is connected with the collector electrode of the 4th full-control type semiconductor device T4, as the second full-control type device tie point 6; The 4th emitter of full-control type semiconductor device T4 and the negative pole 4 of the second capacitance group C2 are connected.
The first leading-out terminal 11 of Fault Isolation combinational circuit 7 is connected with the positive pole 1 of the first capacitance group C1, the second leading-out terminal 12 of Fault Isolation combinational circuit 7 is connected with the negative pole 2 of the first capacitance group C1, three terminal 13 of Fault Isolation combinational circuit 7 is connected with the positive pole 3 of the second capacitance group C2, the 4th leading-out terminal 14 of Fault Isolation combinational circuit 7 is connected with the negative pole 4 of the second capacitance group C2, the 5th leading-out terminal 15 of Fault Isolation combinational circuit 7 is connected with the first full-control type device tie point 5, the 5th leading-out terminal 16 of Fault Isolation combinational circuit 7 is connected with the second full-control type device tie point 6.The 7th terminal 17 of Fault Isolation combinational circuit 7 is as the first leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement, and the 8th terminal 18 of Fault Isolation combinational circuit 7 is as the second leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement.
Embodiment 1
Figure 2 shows that specific embodiments of the invention 1.As shown in Figure 2, the DC Line Fault isolated form flexible DC power transmission current conversion station subelement of the embodiment of the present invention 1 comprises: the first capacitance group C1, the second capacitance group C2, four full-control type semiconductor device T1, T2, T3, T4, and Fault Isolation combinational circuit 7.Connected mode is as follows:
The positive pole 1 of the first capacitance group C1 is connected with the collector electrode of the first full-control type semiconductor device T1; The emitter of the first full-control type semiconductor device T1 is connected with the collector electrode of the second full-control type semiconductor device T2, as the first full-control type device tie point 5; The second emitter of full-control type semiconductor device T2 and the negative pole 2 of the first capacitance group C1 are connected; The positive pole 3 of the second capacitance group C2 is connected with the collector electrode of the 3rd full-control type semiconductor device T3; The emitter of the 3rd full-control type semiconductor device T3 is connected with the collector electrode of the 4th full-control type semiconductor device T4, as the second full-control type device tie point 6; The 4th emitter of full-control type semiconductor device T4 and the negative pole 4 of the second capacitance group C2 are connected.
The first leading-out terminal 11 of Fault Isolation combinational circuit 7 is connected with the positive pole 1 of the first capacitance group C1, the second leading-out terminal 12 of Fault Isolation combinational circuit 7 is connected with the negative pole 2 of the first capacitance group C1, three terminal 13 of Fault Isolation combinational circuit 7 is connected with the positive pole 3 of the second capacitance group C2, the 4th leading-out terminal 14 of Fault Isolation combinational circuit 7 is connected with the negative pole 4 of the second capacitance group C2, the 5th leading-out terminal 15 of Fault Isolation combinational circuit 7 is connected with the first full-control type device tie point 5, the 5th leading-out terminal 16 of Fault Isolation combinational circuit 7 is connected with the second full-control type device tie point 6.The 7th terminal 17 of Fault Isolation combinational circuit 7 is as the first leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement, and the 8th terminal 18 of Fault Isolation combinational circuit 7 is as the second leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement.
Described Fault Isolation combinational circuit 7 is comprised of the 5th full-control type semiconductor device T5, the 6th full-control type semiconductor device T6, the first diode (led) module D1, the second diode (led) module D2.The negative electrode of the first diode (led) module D1 is connected with the first terminal 11 of Fault Isolation combinational circuit 7, the anode of the first diode (led) module D1 is connected with the collector electrode 19 of the 5th full-control type semiconductor device T5, the emitter of the 5th full-control type semiconductor device T5 is connected with the second terminal 12 of Fault Isolation combinational circuit 7, the collector electrode of the 6th full-control type semiconductor device T6 is connected with the 3rd terminal 13 of Fault Isolation combinational circuit 7, the emitter 20 of the 6th full-control type semiconductor device T6 is connected with the negative electrode of the second diode (led) module D2, the anode of the second diode (led) module D2 is connected with the 4th terminal 14 of Fault Isolation combinational circuit 7.The emitter 20 of the 6th full-control type semiconductor device T6 is connected with the collector electrode 19 of the 5th full-control type semiconductor device T5.The Five-terminals 15 of Fault Isolation combinational circuit 7 is connected with the 7th terminal 17 of Fault Isolation combinational circuit 7, and the 6th terminal 16 of Fault Isolation combinational circuit 7 is connected with the 8th terminal 18.
Embodiment 2
Figure 3 shows that specific embodiments of the invention 2.As shown in Figure 3, the DC Line Fault isolated form flexible DC power transmission current conversion station subelement of the embodiment of the present invention 2 comprises: the first capacitance group C1, the second capacitance group C2, four full-control type semiconductor device T1, T2, T3, T4, and Fault Isolation combinational circuit 7.Connected mode is as follows:
The positive pole 1 of the first capacitance group C1 is connected with the collector electrode of the first full-control type semiconductor device T1; The emitter of the first full-control type semiconductor device T1 is connected with the collector electrode of the second full-control type semiconductor device T2, as the first full-control type device tie point 5; The second emitter of full-control type semiconductor device T2 and the negative pole 2 of the first capacitance group C1 are connected; The positive pole 3 of the second capacitance group C2 is connected with the collector electrode of the 3rd full-control type semiconductor device T3; The emitter of the 3rd full-control type semiconductor device T3 is connected with the collector electrode of the 4th full-control type semiconductor device T4, as the second full-control type device tie point 6; The 4th emitter of full-control type semiconductor device T4 and the negative pole 4 of the second capacitance group C2 are connected.
The first leading-out terminal 11 of Fault Isolation combinational circuit 7 is connected with the positive pole 1 of the first capacitance group C1, the second leading-out terminal 12 of Fault Isolation combinational circuit 7 is connected with the negative pole 2 of the first capacitance group C1, three terminal 13 of Fault Isolation combinational circuit 7 is connected with the positive pole 3 of the second capacitance group C2, the 4th leading-out terminal 14 of Fault Isolation combinational circuit 7 is connected with the negative pole 4 of the second capacitance group C2, the 5th leading-out terminal 15 of Fault Isolation combinational circuit 7 is connected with the first full-control type device tie point 5, the 5th leading-out terminal 16 of Fault Isolation combinational circuit 7 is connected with the second full-control type device tie point 6.The 7th terminal 17 of Fault Isolation combinational circuit 7 is as the first leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement, and the 8th terminal 18 of Fault Isolation combinational circuit 7 is as the second leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement.
Described Fault Isolation combinational circuit 7 is comprised of the 6th full-control type semiconductor device T6, the first diode (led) module D1.The emitter of the 6th full-control type semiconductor device T6 is connected with the Five-terminals 15 of Fault Isolation combinational circuit 7, and the collector electrode of the 6th full-control type semiconductor device T6 is connected with the 3rd terminal 13 of Fault Isolation combinational circuit 7.The negative electrode of the first diode (led) module D1 is connected with the first terminal 11 of Fault Isolation combinational circuit 7, and the anode of the first diode (led) module D1 is connected with the 4th terminal 14 of Fault Isolation combinational circuit 7.The first terminal 11 of Fault Isolation combinational circuit 7 is connected with the 7th terminal 17 of Fault Isolation combinational circuit 7, and the 6th terminal 16 of Fault Isolation combinational circuit 7 is connected with the 8th terminal 18.The second terminal 12 of Fault Isolation combinational circuit 7 is vacant.
Embodiment 3
Figure 4 shows that specific embodiments of the invention 3.As shown in Figure 4, the DC Line Fault isolated form flexible DC power transmission current conversion station subelement of the embodiment of the present invention 3 comprises: the first capacitance group C1, the second capacitance group C2, four full-control type semiconductor device T1, T2, T3, T4, and Fault Isolation combinational circuit 7.Connected mode is as follows:
The positive pole 1 of the first capacitance group C1 is connected with the collector electrode of the first full-control type semiconductor device T1; The emitter of the first full-control type semiconductor device T1 is connected with the collector electrode of the second full-control type semiconductor device T2, as the first full-control type device tie point 5; The second emitter of full-control type semiconductor device T2 and the negative pole 2 of the first capacitance group C1 are connected; The positive pole 3 of the second capacitance group C2 is connected with the collector electrode of the 3rd full-control type semiconductor device T3; The emitter of the 3rd full-control type semiconductor device T3 is connected with the collector electrode of the 4th full-control type semiconductor device T4, as the second full-control type device tie point 6; The 4th emitter of full-control type semiconductor device T4 and the negative pole 4 of the second capacitance group C2 are connected.
The first leading-out terminal 11 of Fault Isolation combinational circuit 7 is connected with the positive pole 1 of the first capacitance group C1, the second leading-out terminal 12 of Fault Isolation combinational circuit 7 is connected with the negative pole 2 of the first capacitance group C1, three terminal 13 of Fault Isolation combinational circuit 7 is connected with the positive pole 3 of the second capacitance group C2, the 4th leading-out terminal 14 of Fault Isolation combinational circuit 7 is connected with the negative pole 4 of the second capacitance group C2, the 5th leading-out terminal 15 of Fault Isolation combinational circuit 7 is connected with the first full-control type device tie point 5, the 5th leading-out terminal 16 of Fault Isolation combinational circuit 7 is connected with the second full-control type device tie point 6.The 7th terminal 17 of Fault Isolation combinational circuit 7 is as the first leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement, and the 8th terminal 18 of Fault Isolation combinational circuit 7 is as the second leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement.
Described Fault Isolation combinational circuit 7 is comprised of the 5th full-control type semiconductor device T5, the second diode (led) module D2.The emitter of the 5th full-control type semiconductor device T5 is connected with the second terminal 12 of Fault Isolation combinational circuit 7, and the collector electrode of the 5th full-control type semiconductor device T6 is connected with the 3rd terminal 13 of Fault Isolation combinational circuit 7.The negative electrode of the second diode (led) module D2 is connected with the first terminal 11 of Fault Isolation combinational circuit 7, and the anode of the second diode (led) module D2 is connected with the 4th terminal 14 of Fault Isolation combinational circuit 7.The Five-terminals 15 of Fault Isolation combinational circuit 7 is connected with the 7th terminal 17 of Fault Isolation combinational circuit 7, and the 4th terminal 14 of Fault Isolation combinational circuit 7 is connected with the 8th terminal 18.The 3rd terminal 13 of Fault Isolation combinational circuit 7 is vacant.
Embodiment 4
Figure 5 shows that specific embodiments of the invention 4.As shown in Figure 5, the DC Line Fault isolated form flexible DC power transmission current conversion station subelement of the embodiment of the present invention 4 comprises: the first capacitance group C1, two full-control type semiconductor device T1, T2, and Fault Isolation combinational circuit 7.Connected mode is as follows:
The positive pole 1 of the first capacitance group C1 is connected with the collector electrode of the first full-control type semiconductor device T1; The emitter of the first full-control type semiconductor device T1 is connected with the collector electrode of the second full-control type semiconductor device T2, as the first full-control type device tie point 5; The second emitter of full-control type semiconductor device T2 and the negative pole 2 of the first capacitance group C1 are connected.
The first leading-out terminal 11 of Fault Isolation combinational circuit 7 is connected with the positive pole 1 of the first capacitance group C1, the second leading-out terminal 12 of Fault Isolation combinational circuit 7 is connected with the negative pole 2 of the first capacitance group C1, and the 5th leading-out terminal 15 of Fault Isolation combinational circuit 7 is connected with the first full-control type device tie point 5.The 7th terminal 17 of Fault Isolation combinational circuit 7 is as the first leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement, and the 8th terminal 18 of Fault Isolation combinational circuit 7 is as the second leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement.
Described Fault Isolation combinational circuit 7 is comprised of the 5th full-control type semiconductor device T5, the first diode (led) module D1.The Five-terminals 15 of Fault Isolation combinational circuit 7 is connected with the 7th terminal 17 of Fault Isolation combinational circuit 7, and the 8th terminal 18 of Fault Isolation combinational circuit 7 is connected with the collector electrode 19 of the 5th full-control type semiconductor device T5.The 3rd terminal 13 of Fault Isolation combinational circuit 7, the 4th terminal 14, the 6th terminal 16 are vacant.
Embodiment 5
Figure 6 shows that specific embodiments of the invention 5.As shown in Figure 6, the DC Line Fault isolated form flexible DC power transmission current conversion station subelement of the embodiment of the present invention 5 comprises: the second capacitance group C2, two full-control type semiconductor device T3, T4, and Fault Isolation combinational circuit 7.Connected mode is as follows:
The positive pole 3 of the second capacitance group C2 is connected with the collector electrode of the 3rd full-control type semiconductor device T3; The emitter of the 3rd full-control type semiconductor device T3 is connected with the collector electrode of the 4th full-control type semiconductor device T4, as the second full-control type device tie point 6; The 4th emitter of full-control type semiconductor device T4 and the negative pole 4 of the second capacitance group C2 are connected.
Three terminal 13 of Fault Isolation combinational circuit 7 is connected with the positive pole 3 of the second capacitance group C2, the 4th leading-out terminal 14 of Fault Isolation combinational circuit 7 is connected with the negative pole 4 of the second capacitance group C2, and the 5th leading-out terminal 16 of Fault Isolation combinational circuit 7 is connected with the second full-control type device tie point 6.The 7th terminal 17 of Fault Isolation combinational circuit 7 is as the first leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement, and the 8th terminal 18 of Fault Isolation combinational circuit 7 is as the second leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement.
Described Fault Isolation combinational circuit 7 is comprised of the 6th full-control type semiconductor device T6, the second diode (led) module D2.The 6th terminal 16 of Fault Isolation combinational circuit 7 is connected with the 8th terminal 18 of Fault Isolation combinational circuit 7, and the 7th terminal 17 of Fault Isolation combinational circuit 7 is connected with the emitter 20 of the 6th full-control type semiconductor device T6.The first terminal 11 of Fault Isolation combinational circuit 7, the second terminal 12, Five-terminals 15 are vacant.
Embodiment 6
Fig. 7 is specific embodiments of the invention 6.As shown in Figure 7, the converter bridge arm of embodiment 6 is by m described DC Line Fault isolated form flexible DC power transmission current conversion station subelement ISM1, ISM2 ... ISMm and n semi-bridge type subelement SM1, SM2 ... SMn cascade forms.The first leading-out terminal of the first DC Line Fault isolated form flexible DC power transmission current conversion station subelement ISM1 is as the first leading-out terminal of brachium pontis, the second leading-out terminal of the first DC Line Fault isolated form flexible DC power transmission current conversion station subelement ISM1 is connected with the first leading-out terminal of the second DC Line Fault isolated form flexible DC power transmission current conversion station subelement ISM2, by that analogy, the second leading-out terminal of m DC Line Fault isolated form flexible DC power transmission current conversion station subelement ISMm is connected with the first leading-out terminal of the first semi-bridge type subelement SM1, the second leading-out terminal of the first semi-bridge type subelement SM1 is connected with the first leading-out terminal of the second semi-bridge type subelement SM2, all the other semi-bridge type subelement connected modes by that analogy, the second leading-out terminal of n semi-bridge type subelement SMn is connected with one end of inductance L, the other end of inductance L is as the second leading-out terminal of brachium pontis.Wherein m is more than or equal to 1 integer, and n is more than or equal to 0 integer.
Embodiment 7
Fig. 8 is embodiments of the invention 7, and the second diode (led) module in Fig. 8 is composed in series by a diode 31 and an electric capacity 32.
Embodiment 8
Fig. 9 is embodiments of the invention 8, and the second diode (led) module in Fig. 9 is composed in series by a diode 31 and an electric capacity 32 and a resistance 33.
Embodiment 9
Figure 10 is embodiments of the invention 9, and the second diode (led) module in Figure 10 is composed in series by a diode 31 and a resistance 33.
Embodiment 10
Figure 11 is embodiments of the invention 10, and the second diode (led) module in Figure 10 is composed in series by a diode 31 and an electric capacity 32 and a resistance 33 and an inductance.
Claims (10)
1. a DC Line Fault isolated form flexible DC power transmission current conversion station subelement is topological, it is characterized in that: described DC Line Fault isolated form flexible DC power transmission current conversion station subelement is by the first capacitance group (C1), the second capacitance group (C2), four full-control type semiconductor device (T1, T2, T3, T4), and Fault Isolation combinational circuit (7) forms; The positive pole (1) of the first capacitance group (C1) is connected with the collector electrode of the first full-control type semiconductor device (T1); The emitter of the first full-control type semiconductor device (T1) is connected with the collector electrode of the second full-control type semiconductor device (T2), as the first full-control type device tie point (5); The emitter of the second full-control type semiconductor device (T2) is connected with the negative pole (2) of the first capacitance group (C1); The positive pole (3) of the second capacitance group (C2) is connected with the collector electrode of the 3rd full-control type semiconductor device (T3); The emitter of the 3rd full-control type semiconductor device (T3) is connected with the collector electrode of the 4th full-control type semiconductor device (T4), as the second full-control type device tie point (6); The emitter of the 4th full-control type semiconductor device (T4) is connected with the negative pole (4) of the second capacitance group (C2);
First leading-out terminal (11) of described Fault Isolation combinational circuit (7) is connected with the positive pole (1) of the first capacitance group (C1), second leading-out terminal (12) of Fault Isolation combinational circuit (7) is connected with the negative pole (2) of the first capacitance group (C1), three terminal (13) of Fault Isolation combinational circuit (7) is connected with the positive pole (3) of the second capacitance group (C2), the 4th leading-out terminal (14) of Fault Isolation combinational circuit (7) is connected with the negative pole (4) of the second capacitance group (C2), the 5th leading-out terminal (15) of Fault Isolation combinational circuit (7) is connected with the first full-control type device tie point (5), the 5th leading-out terminal (16) of Fault Isolation combinational circuit (7) is connected with the second full-control type device tie point (6), the 7th terminal (17) of Fault Isolation combinational circuit (7) is as the first leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement, and the 8th terminal (18) of Fault Isolation combinational circuit (7) is as the second leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement.
2. according to DC Line Fault isolated form flexible DC power transmission current conversion station subelement topology claimed in claim 1, it is characterized in that: described Fault Isolation combinational circuit (7) is by the 5th full-control type semiconductor device (T5), the 6th full-control type semiconductor device (T6), the first diode (led) module (D1), and the second diode (led) module (D2) forms, the negative electrode of the first diode (led) module (D1) is connected with the first terminal (11) of Fault Isolation combinational circuit (7), the anode of the first diode (led) module (D1) is connected with the collector electrode (19) of the 5th full-control type semiconductor device (T5), the emitter of the 5th full-control type semiconductor device (T5) is connected with second terminal (12) of Fault Isolation combinational circuit (7), the collector electrode of the 6th full-control type semiconductor device (T6) is connected with the 3rd terminal (13) of Fault Isolation combinational circuit (7), the emitter (20) of the 6th full-control type semiconductor device (T6) is connected with the negative electrode of the second diode (led) module (D2), the anode of the second diode (led) module (D2) is connected with the 4th terminal (14) of Fault Isolation combinational circuit (7), the emitter (20) of the 6th full-control type semiconductor device (T6) is connected with the collector electrode (19) of the 5th full-control type semiconductor device (T5), the Five-terminals (15) of Fault Isolation combinational circuit (7) is connected with the 7th terminal (17) of Fault Isolation combinational circuit (7), and the 6th terminal (16) of Fault Isolation combinational circuit (7) is connected with the 8th terminal (18).
3. according to DC Line Fault isolated form flexible DC power transmission current conversion station subelement topology claimed in claim 1, it is characterized in that: described Fault Isolation combinational circuit (7) is comprised of the 6th full-control type semiconductor device (T6) and the first diode (led) module (D1); The emitter of the 6th full-control type semiconductor device (T6) is connected with the Five-terminals (15) of Fault Isolation combinational circuit (7), and the collector electrode of the 6th full-control type semiconductor device (T6) is connected with the 3rd terminal (13) of Fault Isolation combinational circuit (7); The negative electrode of the first diode (led) module (D1) is connected with the first terminal (11) of Fault Isolation combinational circuit (7), and the anode of the first diode (led) module (D1) is connected with the 4th terminal (14) of Fault Isolation combinational circuit (7); The first terminal (11) of Fault Isolation combinational circuit (7) is connected with the 7th terminal (17) of Fault Isolation combinational circuit (7), and the 6th terminal (16) of Fault Isolation combinational circuit (7) is connected with the 8th terminal (18); Second terminal (12) of Fault Isolation combinational circuit (7) is vacant.
4. according to DC Line Fault isolated form flexible DC power transmission current conversion station subelement topology claimed in claim 1, it is characterized in that: described Fault Isolation combinational circuit (7) is comprised of the 5th full-control type semiconductor device (T5), the second diode (led) module (D2); The emitter of the 5th full-control type semiconductor device (T5) is connected with second terminal (12) of Fault Isolation combinational circuit (7), and the collector electrode of the 5th full-control type semiconductor device (T6) is connected with the 3rd terminal (13) of Fault Isolation combinational circuit (7); The negative electrode of the second diode (led) module (D2) is connected with the first terminal (11) of Fault Isolation combinational circuit (7), and the anode of the second diode (led) module (D2) is connected with the 4th terminal (14) of Fault Isolation combinational circuit (7); The Five-terminals (15) of Fault Isolation combinational circuit (7) is connected with the 7th terminal (17) of Fault Isolation combinational circuit (7), and the 4th terminal (14) of Fault Isolation combinational circuit (7) is connected with the 8th terminal (18); The 3rd terminal (13) of Fault Isolation combinational circuit (7) is vacant.
5. a DC Line Fault isolated form flexible DC power transmission current conversion station subelement topology, is characterized in that: described DC Line Fault isolated form flexible DC power transmission current conversion station subelement is comprised of with Fault Isolation circuit (7) the first capacitance group (C1), the first full-control type semiconductor device (T1), the second full-control type semiconductor device (T2); The positive pole (1) of the first capacitance group (C1) is connected with the collector electrode of the first full-control type semiconductor device (T1); The emitter of the first full-control type semiconductor device (T1) is connected with the collector electrode of the second full-control type semiconductor device (T2), as the first full-control type device tie point (5); The emitter of the second full-control type semiconductor device (T2) is connected with the negative pole (2) of the first capacitance group (C1);
First leading-out terminal (11) of described Fault Isolation combinational circuit (7) is connected with the positive pole (1) of the first capacitance group (C1), second leading-out terminal (12) of Fault Isolation combinational circuit (7) is connected with the negative pole (2) of the first capacitance group (C1), the 5th leading-out terminal (15) of Fault Isolation combinational circuit (7) is connected with the first full-control type device tie point (5), the 7th terminal (17) of Fault Isolation combinational circuit (7) is as the first leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement, the 8th terminal (18) of Fault Isolation combinational circuit (7) is as the second leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement,
Described Fault Isolation combinational circuit (7) is comprised of the first diode (led) module (D1) and the 5th full-control type semiconductor device (T5); The negative electrode of the first diode (led) module (D1) is connected with the first terminal (11) of Fault Isolation combinational circuit (7), the anode of the first diode (led) module (D1) is connected with the collector electrode (19) of the 5th full-control type semiconductor device (T5), and the emitter of the 5th full-control type semiconductor device (T5) is connected with second terminal (12) of Fault Isolation combinational circuit (7);
The Five-terminals (15) of described Fault Isolation combinational circuit (7) is connected with the 7th terminal (17) of Fault Isolation combinational circuit (7), and the 8th terminal (18) of Fault Isolation combinational circuit (7) is connected with the collector electrode (19) of the 5th full-control type semiconductor device (T5); The 3rd terminal (13) of Fault Isolation combinational circuit (7), the 4th terminal (14), the 6th terminal (16) are vacant.
6. a DC Line Fault isolated form flexible DC power transmission current conversion station subelement topology, is characterized in that: described DC Line Fault isolated form flexible DC power transmission current conversion station subelement is comprised of the second capacitance group (C2), the 3rd full-control type semiconductor device (T3), the 4th full-control type semiconductor device (T4) and Fault Isolation circuit (7); The positive pole (3) of the second capacitance group (C2) is connected with the collector electrode of the 3rd full-control type semiconductor device (T3); The emitter of the 3rd full-control type semiconductor device (T3) is connected with the collector electrode of the 4th full-control type semiconductor device (T4), as the second full-control type device tie point (6); The emitter of the 4th full-control type semiconductor device (T4) is connected with the negative pole (4) of the second capacitance group (C2);
Three terminal (13) of Fault Isolation combinational circuit (7) is connected with the positive pole (3) of the second capacitance group (C2), the 4th leading-out terminal (14) of Fault Isolation combinational circuit (7) is connected with the negative pole (4) of the second capacitance group (C2), and the 5th leading-out terminal (16) of Fault Isolation combinational circuit (7) is connected with the second full-control type device tie point (6); The 7th terminal (17) of Fault Isolation combinational circuit (7) is as the first leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement, and the 8th terminal (18) of Fault Isolation combinational circuit (7) is as the second leading-out terminal of DC Line Fault isolated form flexible DC power transmission current conversion station subelement;
Fault Isolation circuit (7) is comprised of the 6th full-control type semiconductor device (T6), the second diode (led) module (D2); The collector electrode of the 6th full-control type semiconductor device (T6) is connected with the 3rd terminal (13) of Fault Isolation combinational circuit (7), the emitter (20) of the 6th full-control type semiconductor device (T6) is connected with the negative electrode of the second diode (led) module (D2), and the anode of the second diode (led) module (D2) is connected with the 4th terminal (14) of Fault Isolation combinational circuit (7);
The 6th terminal (16) of described Fault Isolation combinational circuit (7) is connected with the 8th terminal (18) of Fault Isolation combinational circuit (7), and the 7th terminal (17) of Fault Isolation combinational circuit (7) is connected with the emitter (20) of the 6th full-control type semiconductor device (T6); The first terminal (11) of Fault Isolation combinational circuit (7), the second terminal (12), Five-terminals (15) are vacant.
7. according to DC Line Fault isolated form flexible DC power transmission current conversion station subelement topology claimed in claim 2, it is characterized in that: the first diode (led) module (D1) in described Fault Isolation combinational circuit (7) and the second diode (led) module (D2) are by a diode and b resistance, and c electric capacity, and d inductance is composed in series together, a is more than or equal to 1 integer, and b, c, d are the integer that is more than or equal to 0.
8. according to the DC Line Fault isolated form flexible DC power transmission current conversion station subelement topology described in claim 3 or 5, it is characterized in that: the first diode (led) module (D1) in described Fault Isolation combinational circuit (7) is by a diode and b resistance, and c electric capacity, and d inductance is composed in series together, a is more than or equal to 1 integer, and b, c, d are the integer that is more than or equal to 0.
9. according to the DC Line Fault isolated form flexible DC power transmission current conversion station subelement topology described in claim 4 or 6, it is characterized in that: the second diode (led) module (D2) in described Fault Isolation combinational circuit (7) is by a diode and b resistance, and c electric capacity, and d inductance is composed in series together, a is more than or equal to 1 integer, and b, c, d are the integer that is more than or equal to 0.
10. according to the DC Line Fault isolated form flexible DC power transmission current conversion station subelement topology described in claim 1 or 5 or 6, it is characterized in that: flexible DC power transmission current conversion station brachium pontis is comprised of m described DC Line Fault isolated form flexible DC power transmission current conversion station subelement and the cascade of n semi-bridge type subelement, m is more than or equal to 1 integer, and n is more than or equal to 0 integer.
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| CN201410243027.3A CN104037733B (en) | 2014-06-03 | 2014-06-03 | A kind of DC Line Fault isolated form flexible direct current transmission converter station subelement topology |
| PCT/CN2014/086070 WO2015161610A1 (en) | 2014-04-25 | 2014-09-05 | Direct-current fault isolation type subunit and bridge arm topology structure for flexible direct-current power transmission converter station |
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| CN201410243027.3A CN104037733B (en) | 2014-06-03 | 2014-06-03 | A kind of DC Line Fault isolated form flexible direct current transmission converter station subelement topology |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104267615A (en) * | 2014-09-17 | 2015-01-07 | 华南理工大学 | MMC flexible direct-current system |
| CN104617757A (en) * | 2015-01-30 | 2015-05-13 | 天津大学 | Improved overvoltage preventing type MMC current converter structure having direct-current fault current-limiting capacity |
| CN104617783A (en) * | 2014-12-29 | 2015-05-13 | 天津大学 | Improved structure of MMC (Modular Multilevel Converter) current converter with direct-current fault current-limiting capacity and isolating method |
| CN104638615A (en) * | 2015-02-16 | 2015-05-20 | 天津大学 | Modular multilevel converter with direct-current fault isolation function and submodule thereof |
| CN104821734A (en) * | 2015-04-30 | 2015-08-05 | 华南理工大学 | Sub module circuit of modular multi-level converter |
| CN104993683A (en) * | 2015-07-15 | 2015-10-21 | 南方电网科学研究院有限责任公司 | Modular multi-level current converter sub-module circuit |
| CN105720569A (en) * | 2014-12-05 | 2016-06-29 | 中国科学院电工研究所 | Flexible direct current transmission converter station topology with trouble isolation capability |
| CN106787882A (en) * | 2017-01-18 | 2017-05-31 | 国家电网公司 | A kind of MMC submodules for improving transient overvoltage tolerance |
| CN106998138A (en) * | 2016-01-25 | 2017-08-01 | 华北电力大学 | Bidirectional DC-DC converter without Pressure and Control |
| CN107196539A (en) * | 2017-06-23 | 2017-09-22 | 西安交通大学 | A kind of MMC zero DC voltage fault traversing control methods under bridge arm parameter unbalance state |
| CN108900103A (en) * | 2018-08-23 | 2018-11-27 | 中国能源建设集团广东省电力设计研究院有限公司 | The converter power module and inverter for having DC Line Fault self-cleaning ability |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2674341B2 (en) * | 1991-03-27 | 1997-11-12 | 三菱電機株式会社 | Snubber circuit of power converter |
| CN102420533A (en) * | 2011-12-04 | 2012-04-18 | 中国科学院电工研究所 | Hybrid multilevel current conversion circuit topology structure and control method thereof |
| CN103236788A (en) * | 2013-01-14 | 2013-08-07 | 燕山大学 | Bootstrap dual-input direct current converter |
| CN103280989A (en) * | 2013-05-15 | 2013-09-04 | 南京南瑞继保电气有限公司 | Current converter and control method thereof |
-
2014
- 2014-06-03 CN CN201410243027.3A patent/CN104037733B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2674341B2 (en) * | 1991-03-27 | 1997-11-12 | 三菱電機株式会社 | Snubber circuit of power converter |
| CN102420533A (en) * | 2011-12-04 | 2012-04-18 | 中国科学院电工研究所 | Hybrid multilevel current conversion circuit topology structure and control method thereof |
| CN103236788A (en) * | 2013-01-14 | 2013-08-07 | 燕山大学 | Bootstrap dual-input direct current converter |
| CN103280989A (en) * | 2013-05-15 | 2013-09-04 | 南京南瑞继保电气有限公司 | Current converter and control method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 薛英林等: "C-MMC直流故障穿越机理及改进拓扑方案", 《中国电机工程学报》 * |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104267615A (en) * | 2014-09-17 | 2015-01-07 | 华南理工大学 | MMC flexible direct-current system |
| CN105720569A (en) * | 2014-12-05 | 2016-06-29 | 中国科学院电工研究所 | Flexible direct current transmission converter station topology with trouble isolation capability |
| CN104617783A (en) * | 2014-12-29 | 2015-05-13 | 天津大学 | Improved structure of MMC (Modular Multilevel Converter) current converter with direct-current fault current-limiting capacity and isolating method |
| CN104617757A (en) * | 2015-01-30 | 2015-05-13 | 天津大学 | Improved overvoltage preventing type MMC current converter structure having direct-current fault current-limiting capacity |
| CN104638615A (en) * | 2015-02-16 | 2015-05-20 | 天津大学 | Modular multilevel converter with direct-current fault isolation function and submodule thereof |
| CN104821734A (en) * | 2015-04-30 | 2015-08-05 | 华南理工大学 | Sub module circuit of modular multi-level converter |
| CN104821734B (en) * | 2015-04-30 | 2017-10-20 | 华南理工大学 | A kind of submodular circuits for block combiner multi-level converter |
| CN104993683A (en) * | 2015-07-15 | 2015-10-21 | 南方电网科学研究院有限责任公司 | Modular multi-level current converter sub-module circuit |
| CN104993683B (en) * | 2015-07-15 | 2018-06-19 | 南方电网科学研究院有限责任公司 | Modularized multi-level converter sub-module circuit |
| CN106998138A (en) * | 2016-01-25 | 2017-08-01 | 华北电力大学 | Bidirectional DC-DC converter without Pressure and Control |
| CN106998138B (en) * | 2016-01-25 | 2019-07-05 | 华北电力大学 | Bidirectional DC-DC converter without Pressure and Control |
| CN106787882A (en) * | 2017-01-18 | 2017-05-31 | 国家电网公司 | A kind of MMC submodules for improving transient overvoltage tolerance |
| CN106787882B (en) * | 2017-01-18 | 2023-06-23 | 国家电网公司 | MMC submodule capable of improving transient overvoltage tolerance |
| CN107196539A (en) * | 2017-06-23 | 2017-09-22 | 西安交通大学 | A kind of MMC zero DC voltage fault traversing control methods under bridge arm parameter unbalance state |
| CN108900103A (en) * | 2018-08-23 | 2018-11-27 | 中国能源建设集团广东省电力设计研究院有限公司 | The converter power module and inverter for having DC Line Fault self-cleaning ability |
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