CN204068699U - A kind of MMC submodule with direct-current short circuit fault self-cleaning ability - Google Patents

A kind of MMC submodule with direct-current short circuit fault self-cleaning ability Download PDF

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Publication number
CN204068699U
CN204068699U CN201420520633.0U CN201420520633U CN204068699U CN 204068699 U CN204068699 U CN 204068699U CN 201420520633 U CN201420520633 U CN 201420520633U CN 204068699 U CN204068699 U CN 204068699U
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China
Prior art keywords
switching tube
electric capacity
submodule
switch transistor
mmc submodule
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CN201420520633.0U
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Chinese (zh)
Inventor
张波
付坚
丘东元
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华南理工大学
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Priority to CN201420520633.0U priority Critical patent/CN204068699U/en
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Abstract

The utility model provides a kind of MMC submodule with direct-current short circuit fault self-cleaning ability.The utility model MMC submodule is made up of the first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, diode, the first electric capacity and the second electric capacity; Described switching tube is IGBT.The course of work of the utility model MMC submodule is equivalent to two half-bridge modules, and loss is lower, has the self-purging ability of DC transmission system DC side fault, and the device count formed is less.Compared with existing half-bridge submodule, there is the self-purging ability of DC transmission system DC side fault; Compared with existing full-bridge submodule, number of switches reduces to some extent; Compared with existing pair of clamper submodule, decrease a diode, and in the course of work, the switching tube number of conducting is few, loss is lower.

Description

A kind of MMC submodule with direct-current short circuit fault self-cleaning ability
Technical field
The utility model relates to composite module multi-level converter field, is specifically related to a kind of MMC submodule with direct-current short circuit fault self-cleaning ability.
Background technology
Along with the development of high voltage direct current transmission, multi-level converter obtains huge development.Wherein, block combiner multi-level converter (Modular Multilevel Converter, MMC) as a kind of novel many level topologys, except having the advantage of traditional multi-level converter, block combiner multi-level converter adopts Modular Structure Design, is convenient to System Expansion and redundancy of effort; Have unbalanced operation ability, fault traversing and recovery capability, system reliability is high; Owing to having common DC bus, block combiner multi-level converter is particularly useful for HVDC (High Voltage Direct Current) transmission system application.
At present, MMC submodule mainly contains half-bridge submodule, full-bridge submodule and clamper Shuangzi module.Half-bridge submodule as shown in Figure 1, is made up of two switching tubes and an electric capacity, and structure is simple, but cannot the fault of self-cleaning DC transmission system DC side.Full-bridge submodule as shown in Figure 2, is made up of four switching tubes and an electric capacity, when MMC DC side is short-circuited all switching tubes of fail lockout, full-bridge submodule is made to export positive level or negative level, thus self-cleaning DC side fault, but switching tube number is too many, and cost is high.Clamper Shuangzi module as shown in Figure 3, be made up of five switching tubes, two diodes and two electric capacity, the course of work is equivalent to two half-bridge submodules, when MMC DC side is short-circuited all switching tubes of fail lockout, clamper Shuangzi module is made to export positive level or negative level, thus self-cleaning DC side fault.Clamper Shuangzi module number of switches compared with full-bridge submodule reduces to some extent, but device count is still a lot.
Utility model content
The purpose of this utility model is to overcome above-mentioned the deficiencies in the prior art, proposes the MMC submodule that a kind of mould has direct-current short circuit fault self-cleaning ability.
The technical solution adopted in the utility model is:
There is a MMC submodule for direct-current short circuit fault self-cleaning ability, be made up of the first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, diode, the first electric capacity and the second electric capacity; Described switching tube is IGBT; The port voltage of MMC submodule is u sM, the input current of MMC submodule is i sM; The voltage of the first electric capacity is u c1 , the voltage of the second electric capacity is u c2 , and u c1 = u c2 = u c , u c for set-point.
The emitter of the first switching tube is connected with the collector electrode of second switch pipe, the negative electrode of diode, the collector electrode of the first switching tube is connected with the positive pole of the first electric capacity, the emitter of second switch pipe is connected with the emitter of the 5th switching tube, the collector electrode of the 5th switching tube is connected with the positive pole of the negative pole of the first electric capacity, the second electric capacity, the collector electrode of the 4th switching tube, the emitter of the 4th switching tube is connected with the collector electrode of the 3rd switching tube, and the emitter of the 3rd switching tube is connected with the negative pole of the anode of diode, the second electric capacity; The emitter of the first switching tube and the collector electrode of the 3rd switching tube are as the output of MMC submodule.
Compared with prior art, the advantage that the utility model has is: the course of work is equivalent to two half-bridge modules, and loss is lower, has the self-purging ability of DC transmission system DC side fault, and the device count formed is less.Compared with existing half-bridge submodule, there is the self-purging ability of DC transmission system DC side fault; Compared with existing full-bridge submodule, number of switches reduces to some extent; Compared with existing pair of clamper submodule, decrease a diode, and in the course of work, the switching tube number of conducting is few, loss is lower.
Accompanying drawing explanation
Fig. 1 is the circuit structure diagram of existing half-bridge submodule;
Fig. 2 is the circuit structure diagram of existing full-bridge submodule;
Fig. 3 is the circuit structure diagram of existing pair of clamper submodule;
Fig. 4 is a kind of circuit structure diagram with the MMC submodule of direct-current short circuit fault self-cleaning ability of the present utility model;
Fig. 5 a, 5b, 5c, 5d are four kinds of mode that circuit shown in Fig. 4 normally works respectively;
Fig. 6 a, 6b are two kinds of mode of the situation of circuit interlocking shown in Fig. 4 respectively.
Embodiment
For setting forth content of the present utility model and feature further, below in conjunction with accompanying drawing, specific embodiments of the present utility model is specifically described, but enforcement of the present utility model is not limited thereto.If there is the not special control procedure described in detail below, be all that those skilled in the art can refer to existing techniques in realizing.
With reference to figure 4, a kind of MMC submodule with direct-current short circuit fault self-cleaning ability of the present utility model is by the first switch transistor T 1, second switch pipe T 2, the 3rd switch transistor T 3, the 4th switch transistor T 4, the 5th switch transistor T 5, diode D, the first electric capacity C 1with the second electric capacity C 2form; Described switching tube is IGBT; The port voltage of MMC submodule is u sM, the input current of MMC submodule is i sM; First electric capacity C 1voltage be u c1 , the second electric capacity C 2voltage be u c2 , u c1 equal u c2 and be set point u c .
First switch transistor T 1emitter and second switch pipe T 2collector electrode, diode D negative electrode connect, the first switch transistor T 1collector electrode and the first electric capacity C 1positive pole connect, second switch pipe T 2emitter and the 5th switch transistor T 5emitter connect, the 5th switch transistor T 5collector electrode and the first electric capacity C 1negative pole, the second electric capacity C 2positive pole, the 4th switch transistor T 4collector electrode connect, the 4th switch transistor T 4emitter and the 3rd switch transistor T 3collector electrode connect, the 3rd switch transistor T 3emitter and anode, the second electric capacity C of diode D 2negative pole connect; First switch transistor T 1emitter and the 3rd switch transistor T 3collector electrode as the output of MMC submodule.
MMC submodule provided by the utility model normally works and has 4 mode, controls the 5th switch transistor T when MMC normally runs 5always open-minded:
Mode 1: as shown in Figure 5 a, controls second switch pipe T 2with the 4th switch transistor T 4open-minded, the first switch transistor T 1with the 3rd switch transistor T 3turn off, diode D ends, MMC submodule output voltage u sM=0.When MMC submodule input current i sMduring >0, the path of electric current as shown in dotted line 5a1, electric current i sMby second switch pipe T 2, the 4th switch transistor T 4with the 5th switch transistor T 5anti-paralleled diode, the first electric capacity C 1with the second electric capacity C 2neither charge and also do not discharge; When MMC submodule input current i sMduring <0, electric current i sMby second switch pipe T 2anti-paralleled diode, the 4th switch transistor T 4with the 5th switch transistor T 5, the path of electric current as shown in dotted line 5a2, the first electric capacity C 1with the second electric capacity C 2neither charge and also do not discharge.
Mode 2: as shown in Figure 5 b, controls the first switch transistor T 1with the 4th switch transistor T 4open-minded, second switch pipe T 2with the 3rd switch transistor T 3turn off, diode D ends, MMC submodule output voltage u sM= u c ( u c= u c1= u c2).When MMC submodule input current i sMduring >0, the path of electric current as shown in dotted line 5b2, electric current i sMby the first switch transistor T 1anti-paralleled diode and the 4th switch transistor T 4to the first electric capacity C 1charging, the second electric capacity C 2neither charge and also do not discharge; When MMC submodule input current i sMduring <0, the path of electric current as shown in dotted line 5b1, the first electric capacity C 1by the first switch transistor T 1with the 4th switch transistor T 4anti-paralleled diode electric discharge, the second electric capacity C 2neither charge and also do not discharge.
Mode 3: as shown in Figure 5 c, controls second switch pipe T 2with the 3rd switch transistor T 3open-minded, the first switch transistor T 1with the 4th switch transistor T 4turn off, diode D ends, MMC submodule output voltage u sM= u c .When MMC submodule input current i sMduring >0, the path of electric current as shown in dotted line 5c1, the first electric capacity C 1neither charge and also do not discharge, electric current i sMby second switch pipe T 2, the 3rd switch transistor T 3anti-paralleled diode and the 5th switch transistor T 5anti-paralleled diode give the second electric capacity C 2charging; When MMC submodule input current i sMduring <0, the path of electric current as shown in dotted line 5c2, the first electric capacity C 1neither charge and also do not discharge, the second electric capacity C 2by second switch pipe T 2anti-paralleled diode, the 3rd switch transistor T 3with the 5th switch transistor T 5electric discharge.
Mode 4: as fig 5d, controls the first switch transistor T 1with the 3rd switch transistor T 3open-minded, second switch pipe T 2with the 4th switch transistor T 4turn off, diode D ends, MMC submodule output voltage u sM=2 u c .When MMC submodule input current i sMduring >0, the path of electric current as shown in dotted line 5d1, electric current i sMby the first switch transistor T 1anti-paralleled diode and the 3rd switch transistor T 3anti-paralleled diode give the first electric capacity C 1with the second electric capacity C 2charging; When MMC submodule input current i sMduring <0, the path of electric current as shown in dotted line 5d2, the first electric capacity C 1with the second electric capacity C 2by the first switch transistor T 1with the 3rd switch transistor T 3electric discharge.
When DC transmission system DC side is short-circuited fault, the switching tube that locking is all, namely controls all switching tubes when MMC DC side is short-circuited fault and all turns off, and MMC submodule has two mode.
Mode 1: when MMC submodule input current i sMduring >0, current path as shown in Figure 6 a, the output voltage of MMC submodule u sM=2 u c , electric current i sMby the first switch transistor T 1anti-paralleled diode and the 3rd switch transistor T 3anti-paralleled diode give the first electric capacity C 1with the second electric capacity C 2charging.
Mode 2: when MMC submodule input current i sMduring <0, current path as shown in Figure 6 b, the output voltage of MMC submodule u sM=- u c , the first electric capacity C 1with the second electric capacity C 2by diode D and the 4th switch transistor T 4anti-paralleled diode electric discharge.
Visible, when MMC DC side is short-circuited fault by all switching tubes of locking, make MMC submodule export positive level or negative level, thus self-cleaning DC side fault.
Above-described embodiment is the utility model preferably execution mode; but execution mode of the present utility model is not limited by the examples; change, the modification done under other any does not deviate from Spirit Essence of the present utility model and principle, substitute, combine, simplify; all should be the substitute mode of equivalence, be included within protection range of the present utility model.

Claims (2)

1. there is a MMC submodule for direct-current short circuit fault self-cleaning ability, it is characterized in that comprising the first switching tube (T 1), second switch pipe (T 2), the 3rd switching tube (T 3), the 4th switching tube (T 4), the 5th switching tube (T 5), diode (D), the first electric capacity (C 1) and the second electric capacity (C 2); First electric capacity (C 1) voltage be u c1 , the second electric capacity (C 2) voltage be u c2 ; First switching tube (T 1) emitter and second switch pipe (T 2) collector electrode, diode (D) negative electrode connect, the first switching tube (T 1) collector electrode and the first electric capacity (C 1) positive pole connect, second switch pipe (T 2) emitter and the 5th switching tube (T 5) emitter connect, the 5th switching tube (T 5) collector electrode and the first electric capacity (C 1) negative pole, the second electric capacity (C 2) positive pole, the 4th switching tube (T 4) collector electrode connect, the 4th switching tube (T 4) emitter and the 3rd switching tube (T 3) collector electrode connect, the 3rd switching tube (T 3) emitter and anode, the second electric capacity (C of diode (D) 2) negative pole connect; First switching tube (T 1) emitter and the 3rd switching tube (T 3) collector electrode as the output of MMC submodule.
2. a kind of MMC submodule with direct-current short circuit fault self-cleaning ability according to claim 1, is characterized in that: described switching tube is IGBT.
CN201420520633.0U 2014-09-11 2014-09-11 A kind of MMC submodule with direct-current short circuit fault self-cleaning ability CN204068699U (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106329950A (en) * 2015-07-01 2017-01-11 南京南瑞继保电气有限公司 Driving signal modulation method of modular multilevel converter and fault isolation method
CN106981975A (en) * 2017-05-15 2017-07-25 华中科技大学 A kind of direct current submodule
CN107196539A (en) * 2017-06-23 2017-09-22 西安交通大学 A kind of MMC zero DC voltage fault traversing control methods under bridge arm parameter unbalance state
CN108957271A (en) * 2017-05-26 2018-12-07 许继集团有限公司 A kind of IGBT driving over current fault monitoring method and device
CN110098598A (en) * 2019-05-15 2019-08-06 重庆大学 Inverse-impedance type mixing submodule and its failure blocking-up method with failure blocking ability
CN110247566A (en) * 2019-07-05 2019-09-17 沈阳工业大学 A kind of detection of the DC side failure based on MMC dissymmetric network and blocking-up method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106329950A (en) * 2015-07-01 2017-01-11 南京南瑞继保电气有限公司 Driving signal modulation method of modular multilevel converter and fault isolation method
CN106329950B (en) * 2015-07-01 2019-01-08 南京南瑞继保电气有限公司 Modularization multi-level converter driving signal modulator approach and failure separation method
CN106981975A (en) * 2017-05-15 2017-07-25 华中科技大学 A kind of direct current submodule
CN108957271A (en) * 2017-05-26 2018-12-07 许继集团有限公司 A kind of IGBT driving over current fault monitoring method and device
CN107196539A (en) * 2017-06-23 2017-09-22 西安交通大学 A kind of MMC zero DC voltage fault traversing control methods under bridge arm parameter unbalance state
CN110098598A (en) * 2019-05-15 2019-08-06 重庆大学 Inverse-impedance type mixing submodule and its failure blocking-up method with failure blocking ability
CN110247566A (en) * 2019-07-05 2019-09-17 沈阳工业大学 A kind of detection of the DC side failure based on MMC dissymmetric network and blocking-up method

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