CN106981975A - A kind of direct current submodule - Google Patents

A kind of direct current submodule Download PDF

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Publication number
CN106981975A
CN106981975A CN201710339050.6A CN201710339050A CN106981975A CN 106981975 A CN106981975 A CN 106981975A CN 201710339050 A CN201710339050 A CN 201710339050A CN 106981975 A CN106981975 A CN 106981975A
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CN
China
Prior art keywords
igbt
diode
direct current
submodule
current submodule
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CN201710339050.6A
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Chinese (zh)
Inventor
张明
王栋煜
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华中科技大学
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Priority to CN201710339050.6A priority Critical patent/CN106981975A/en
Publication of CN106981975A publication Critical patent/CN106981975A/en

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M2001/0067Converter structures employing plural converter units, other than for parallel operation of the units on a single load
    • H02M2001/007Plural converter units in cascade

Abstract

The invention discloses a kind of direct current submodule, including the first IGBT, the 2nd IGBT, the first diode, the second diode, the 3rd diode, the 4th diode, the 5th diode, electric capacity, resistance, current sensor and voltage sensor;This direct current submodule that the present invention is provided lets out energy, locking, the switching for turning off three states by controlling two IGBT switch to realize, the dynamic for completing module voltage by the discharge and recharge constraint to electric capacity is adjusted, so as to reduce module excessive pressure damages risk;In addition, in external equipment short trouble, excessively stream infringement can be suppressed by the through-current capabilities of two branch road transient increase modules in parallel;The direct current sub-modular structure that the present invention is provided is simple, with very high flexibility, replaces IGBT direct series connection by the cascade concatenation of the submodule unit, is applicable to high-voltage electric switch field.

Description

A kind of direct current submodule

Technical field

The invention belongs to power power electronic module technical field, more particularly, to a kind of direct current submodule.

Background technology

With continuing to develop for Power Electronic Technique, voltage, the capacity of power-supply device are improved constantly, at present in high-pressure frequency-conversion Device, direct current transportation, nuclear fusion field, supply voltage mostly ten kilovolts even hundred kilovolts of grades, this high-tension apparatus it is reliable, High-performance operation be unable to do without a set of perfect switch protection measure.Current high-voltage switch gear is divided into mechanical switch and solid-state switch, Mechanical switch voltage class is high, and current capacity is strong, but its response time, closing time are longer, are unfavorable for the protection of power supply;Cause This, the solid-state switch using IGBT, IGCT as core starts to flourish.

In order to bear voltage levels, common solution is that the semiconductor devices such as IGBT are directly connected, but It is due to the influence such as stray inductance of nuance between each device and circuit, each device in switching process can be caused to hold Pressure is unbalanced, and the service life and operating efficiency of strong influence switch cause device breakdown to damage, and one in link in tandem The damage of device, even if there is redundancy, it is also possible to cause the failure entirely switched.In addition, in high-voltage dc transmission electrical domain Occur in that with modularization multi-level converter (Modular Multilever Converter, MMC) to be that the new of representative is opened up Flutter, it uses the mentality of designing of sub-module cascade, improve the expansion of switch, reduce device and press, trigger wanting for uniformity Ask, its submodule is usually full-bridge, half-bridge, class full bridge structure, due to operationally needing to be charged in advance to each submodule, and And actively change bridge arm voltage by control algolithm switching submodule state, therefore these submodules topology is not suitable for height Compress switch.

The content of the invention

For the disadvantages described above or Improvement requirement of prior art, the invention provides a kind of direct current submodule, it is intended to improves The expansion and reliability of high-voltage switch gear.

To achieve the above object, according to one aspect of the present invention, there is provided a kind of direct current submodule, including first IGBT, the 2nd IGBT, the first diode, the second diode, the 3rd diode, the 4th diode, the 5th diode, electric capacity, electricity Resistance, current sensor and voltage sensor;

Wherein, the first IGBT colelctor electrode is used as the positive pole of the direct current submodule, the first IGBT emitter stage and first The negative electrode of diode, the anode of the 3rd diode are connected with the negative pole of electric capacity, the first IGBT colelctor electrode and the first diode Negative electrode is connected;2nd IGBT emitter stage as the direct current submodule negative pole and be connected with the negative electrode of the second diode, Two IGBT colelctor electrode is connected with the anode, the negative electrode of the 4th diode and the anode of the 5th diode of the second diode;3rd The negative electrode of diode is connected with the 2nd IGBT emitter stage, and the anode of the 4th diode is connected with the first IGBT colelctor electrode;The Five diodes are in parallel with a resistor, and the negative electrode of the 5th diode is connected with the positive pole of electric capacity;The collection of current sensor and the first IGBT Electrode is connected, and voltage sensor is connected with electric capacity negative pole.

It is preferred that, above-mentioned direct current submodule, the first IGBT is identical with the 2nd IGBT models, the first diode and the two or two Pole pipe model is identical, and the 3rd diode is identical with the 4th diode model.

It is preferred that, above-mentioned direct current submodule, when the first IGBT and the 2nd IGBT is both turned on, the direct current submodule enters Letting out can state;In the case where letting out energy state, current flow paths include following 3 branch roads:

The diodes of (1) the first IGBT- the 3rd;

(2) the 4th the-the two IGBT of diode;

(3) the first the-the two IGBT of IGBT- capacitance-resistances;

In the case where letting out energy state, direct current submodule is due to the parallel connection of multiple branch circuit, with stronger conveyance capacity;And electric capacity electricity Pressure declines with the release of capacitance current.

It is preferred that, above-mentioned direct current submodule, when the first IGBT and the 2nd IGBT is turned off, the direct current submodule enters Off state;In the off case, current flow paths are:

4th the-the five diodes of the diode-diode of electric capacity-the three, capacitance voltage rises because constantly charging.

It is preferred that, above-mentioned direct current submodule, when the first IGBT conductings, when the 2nd IGBT is turned off, direct current submodule enters Blocking;Under the blocking, current flow paths are:The diodes of first IGBT- the 3rd, capacitance voltage remains unchanged.

It is preferred that, above-mentioned direct current submodule, when the first IGBT shut-offs, when the 2nd IGBT is turned on, direct current submodule enters Blocking;Under the blocking, current flow paths are:4th the-the two IGBT of diode, capacitance voltage remains unchanged.

It is preferred that, above-mentioned direct current submodule, when direct current submodule needs to flow through load current in normal operation, Control IGBT makes direct current submodule enter blocking, and the direct current submodule is due to load current path, capacitance voltage It will not raise;When direct current submodule needs cut-out load current in normal operation, control IGBT enters direct current submodule Enter off state, the direct current submodule does not have load current path, and capacitance voltage can be raised;When current sensor is detected When overcurrent or voltage sensor senses are to overvoltage, by controlling IGBT direct current submodule is entered energy state of letting out, electric capacity electricity Drops.

It is preferred that, above-mentioned direct current submodule, wherein, IGBT can be using the full control such as IGCT, IGCT, IEGT or MOSFET Type semiconductor switch device is replaced;

When replacing IGBT using IGCT, the anode correspondence IGBT of IGCT colelctor electrode, the negative electrode correspondence of IGCT IGBT emitter stage;

When replacing IGBT using IGCT, IGCT anode correspondence IGBT colelctor electrode, IGCT negative electrode correspondence IGBT's Emitter stage;

When replacing IGBT using IEGT, IEGT colelctor electrode correspondence IGBT colelctor electrode, IEGT negative electrode correspondence IGBT Emitter stage;

When replacing IGBT using MOSFET, MOSFET drain electrode correspondence IGBT colelctor electrode, MOSFET source electrode correspondence IGBT emitter stage.

In general, by the contemplated above technical scheme of the present invention compared with prior art, it can obtain down and show Beneficial effect:

(1) direct current submodule provided by the present invention, with locking, turn off, let out can Three models, under non-blocking mode only There is 1 IGBT conducting, can turn on the alternate conduction between load current, two branch roads can substantially reduce in submodule each The heat radiation power of semiconductor devices, reduces cooling device volume, and capacitance voltage without discharge loop because keep constant;Work as inspection When measuring overcurrent, another IGBT can be also switched on making submodule switch to let out can pattern, quickly improve current capacity, electric capacity Voltage is discharged and declined by resistance;In the shutdown mode, 2 IGBT are turned off, the resistance due to bypass diode, therefore electricity Hold can with quick charge, when detect capacitance voltage it is too high when, can open any one IGBT makes submodule switch to locking mould Formula, clamp voltage avoids each device because of excessive pressure damages;

(2) this direct current submodule that the present invention is provided, which only needs to 2 IGBT, just can be adjusted flexibly submodule voltage;Than existing There is the voltage control of the MMC bridge arm submodules of technology simple;

(3) reliability for this direct current submodule that the present invention is provided is high, and module voltage adjustment is rapid easy, even if one Branch road is damaged, and still has the negotiable load current of another branch road;By the way that submodule unit is cascaded into the direct string that concatenation replaces IGBT It is combined when high-voltage switch gear, the reliability of high-voltage switch gear can be improved;

(4) this direct current submodule flexibility that the present invention is provided is strong, circuit design module, is easy to cascade and later stage Safeguard and change;The expansion of high-voltage switch gear can be improved by using it for high-voltage switch gear.

Brief description of the drawings

Fig. 1 is the principle schematic of direct current submodule provided in an embodiment of the present invention;

Fig. 2 is the internal topology of IGBT module employed in the embodiment of the present invention;

Fig. 3 is current path schematic diagram of the direct current submodule provided in an embodiment of the present invention in the case where letting out energy state;

Fig. 4 is the current path schematic diagram of direct current submodule provided in an embodiment of the present invention in the off case;

Fig. 5 is a kind of current path schematic diagram of the direct current submodule provided in an embodiment of the present invention under blocking;

Fig. 6 is current path schematic diagram of the direct current submodule provided in an embodiment of the present invention under another blocking.

Embodiment

In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and It is not used in the restriction present invention.As long as in addition, technical characteristic involved in each embodiment of invention described below Not constituting conflict each other can just be mutually combined.

It is the principle schematic of direct current submodule provided in an embodiment of the present invention shown in Fig. 1;The direct current submodule includes the The one IGBT diodes of T1, the 2nd IGBTT 2i, first D1, the second diode D2, the 3rd diode D3, the 4th diode D4, the Five diode D5, electric capacity C, resistance R, current sensor AT and voltage sensor VT;

Wherein, IGBT module uses infineon FD250R65KE3, and its topological structure is as shown in Fig. 2 include one IGBT and its anti-paralleled diode and a fly-wheel diode, wherein IGBT make as first (two) IGBT, anti-paralleled diode For first (two) diode, fly-wheel diode is as the 3rd (four) diode, and the 5th diode is using infineon's DD200S33K2C, includes the diode of 2 series connection;Electric capacity uses EACO STF-3000-0.068, and resistance is using Vishay's Thick-film resistor LPS 600;Voltage sensor uses the Hall voltage sensor DV 4200 of LEM companies, and current sensor uses space The CHB-500T of ripple module.

The connected mode of direct current submodule that embodiment is provided is:First IGBT colelctor electrode as direct current submodule just Pole, emitter stage connects the anode of the 3rd diode and the negative pole of electric capacity, the first diode and its inverse parallel;2nd IGBT transmitting Pole as sub- direct current submodule negative pole, colelctor electrode connect the 4th diode negative electrode and the 5th diode anode, the two or two Pole pipe and its inverse parallel;The negative electrode of 3rd diode connects the negative pole of submodule, the anode connection submodule of the 4th diode Positive pole;5th diode is in parallel with a resistor, and the negative electrode of the 5th diode connects the positive pole of electric capacity;Current sensor is connected to direct current The positive pole of submodule, voltage sensor and capacitance connection.

When the first IGBT and the 2nd IGBT are both turned on, direct current submodule, which enters, lets out energy state;Let out the electric current under energy state Circulation path as shown in Figure 3, including the diodes of the first IGBT- the 3rd, the 4th the-the two IGBT of diode, the first IGBT- electricity The IGBT of appearance-resistance-the two totally 3 branch roads;In this case, direct current submodule is due to the parallel connection of multiple branch circuit, with stronger mistake Stream ability;And with the release of capacitance current, capacitance voltage declines, and capacitance voltage change is shown below:

Wherein, vCFor electric capacity instantaneous voltage,For the 2nd IGBT conducting voltage,For the 3rd diode Conduction voltage drop, VCElectric capacity initial voltage when letting out energy state to enter, R is resistance, and C is capacitor's capacity, and t is when letting out energy Between;The length of energy time can be let out by control, the size of capacitance voltage is controlled.

When the first IGBT and the 2nd IGBT are turned off, direct current submodule enters off state;Electric current under off state Circulation path as shown in figure 4, including the 4th the-the five diodes of diode-diode of electric capacity-the three totally one article of branch road,;This feelings Under condition, capacitance voltage rises because constantly charging, and capacitance voltage change is shown below:

Wherein, vCFor electric capacity instantaneous voltage, VdcFor DC bus-bar voltage, VCElectric capacity is initially electric during to enter off state Pressure, R is resistance, and C is capacitor's capacity, and t is the turn-off time;When the direct current submodule is used alone, with the turn-off time Growth, capacitance voltage can be improved constantly until reach busbar voltage;It is contemplated that in sub-module cascade application, bus electricity More than the withstanding voltage of submodule, the theoretical voltage of each direct current submodule should be V to pressuredc/ n, if some direct current submodule is in Off state overlong time, then easily cause the excessive pressure damages of submodule with the increase of capacitance voltage;Wherein n is the son of cascade Number of modules.

When the first IGBT conductings, when the 2nd IGBT is turned off, the electric current that direct current submodule enters under blocking, blocking Circulation path is as shown in figure 5, including the diodes of the first IGBT- the 3rd totally one article of branch road, capacitance voltage remains unchanged.

When the first IGBT shut-offs, when the 2nd IGBT is turned on, the electric current that direct current submodule enters under blocking, blocking Circulation path is as shown in fig. 6, including the 4th the-the two IGBT of diode totally one article of branch road, capacitance voltage remains unchanged.

High-voltage switch gear is constituted by multiple direct current sub-module cascades, when high-voltage switch gear is turned off, all direct current submodules enter Off state;If direct current submodule voltage is more than DC bus-bar voltage, excess voltage is the three or two in each direct current submodule Pole pipe, the 4th diode are born;If direct current submodule voltage is less than DC bus-bar voltage, dc bus is given by diode Electric capacity charging in each direct current submodule;When Partial DC submodule overtension, then the direct current submodule is set to enter locking State is to keep direct current submodule voltage to remain unchanged, it is to avoid direct current submodule is because of excessive pressure damages.

When high-voltage switch gear is opened, all direct current submodules enter blocking;In high-voltage switch gear conducting phase, controlled The direct current submodule of pressure, which enters, lets out energy state decompression;If the excessively stream caused by short trouble, all direct current submodules are controlled to enter Let out energy state to increase the instantaneous carrying-current ability of high-voltage switch gear, it is to avoid submodule is because of overcurrent damage.

IGBT in embodiment can be using full-control type semiconductor switch device generations such as IGCT, IGCT, IEGT or MOSFET Replace;When replacing IGBT using IGCT, the anode correspondence IGBT of IGCT colelctor electrode, the negative electrode correspondence IGBT's of IGCT Emitter stage, it is corresponding to be connected with miscellaneous part;When replacing IGBT using IGCT, IGCT anode correspondence IGBT colelctor electrode, IGCT negative electrode correspondence IGBT emitter stage, it is corresponding to be connected with miscellaneous part;When replacing IGBT using IEGT, IEGT collection Electrode pair answers IGBT colelctor electrode, and IEGT negative electrode correspondence IGBT emitter stage is corresponding to be connected with miscellaneous part;Work as use When MOSFET replaces IGBT, MOSFET drain electrode correspondence IGBT colelctor electrode, MOSFET source electrode correspondence IGBT emitter stage is right That answers is connected with miscellaneous part.

As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, it is not used to The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the invention etc., it all should include Within protection scope of the present invention.

Claims (8)

1. a kind of direct current submodule, it is characterised in that including the first IGBT, the 2nd IGBT, the first diode, the second diode, 3rd diode, the 4th diode, the 5th diode, electric capacity, resistance, current sensor and voltage sensor;
The colelctor electrode of first IGBT is used as the positive pole of the direct current submodule, the first IGBT emitter stage and the first diode Negative electrode, the anode of the 3rd diode be connected with the negative pole of electric capacity, the first IGBT colelctor electrode and the negative electrode phase of the first diode Even;2nd IGBT emitter stage as the direct current submodule negative pole and be connected with the negative electrode of the second diode, the 2nd IGBT Colelctor electrode be connected with the anode, the negative electrode of the 4th diode and the anode of the 5th diode of the second diode;3rd diode Negative electrode be connected with the 2nd IGBT emitter stage, the anode of the 4th diode is connected with the first IGBT colelctor electrode;Five or two pole Pipe is in parallel with a resistor, and the negative electrode of the 5th diode is connected with the positive pole of electric capacity;The colelctor electrode phase of current sensor and the first IGBT Even, voltage sensor is connected with electric capacity negative pole.
2. direct current submodule as claimed in claim 1, it is characterised in that the first IGBT is identical with the 2nd IGBT models, First diode is identical with the second diode model, and the 3rd diode is identical with the 4th diode model.
3. direct current submodule as claimed in claim 1 or 2, it is characterised in that when the first IGBT and the 2nd IGBT is led When logical, the direct current submodule, which enters, lets out energy state;Let out described under energy state, the current flow paths of the direct current submodule Including following 3 branch roads:
The diodes of (1) the first IGBT- the 3rd;
(2) the 4th the-the two IGBT of diode;
(3) the first the-the two IGBT of IGBT- capacitance-resistances;
Let out described under energy state, direct current submodule includes three branch roads in parallel, with stronger conveyance capacity;And electric capacity Voltage declines with the release of capacitance current.
4. direct current submodule as claimed in claim 1 or 2, it is characterised in that when the first IGBT and the 2nd IGBT is closed When disconnected, the direct current submodule enters off state;Under the off state, current flow paths are:
4th the-the five diodes of the diode-diode of electric capacity-the three, capacitance voltage rises because constantly charging.
5. direct current submodule as claimed in claim 1 or 2, it is characterised in that when the first IGBT conductings, the 2nd IGBT are closed When disconnected, the direct current submodule enters blocking;In the lockout condition, current flow paths are:First IGBT- the 3rd Diode, capacitance voltage remains unchanged.
6. direct current submodule as claimed in claim 1 or 2, it is characterised in that when the first IGBT shut-offs, the 2nd IGBT are led When logical, the direct current submodule enters blocking;In the lockout condition, current flow paths are:4th diode-the Two IGBT, capacitance voltage remains unchanged.
7. direct current submodule as claimed in claim 1 or 2, it is characterised in that when the direct current submodule is in normal work shape When needing to flow through load current under state, control IGBT makes direct current submodule enter blocking, the direct current submodule due to Load current path, capacitance voltage will not be raised;When direct current submodule needs cut-out load current in normal operation, control IGBT processed makes direct current submodule enter off state, and the direct current submodule does not have load current path, and capacitance voltage can rise It is high;When current sensor detects overcurrent or voltage sensor senses to overvoltage, by controlling IGBT to make direct current submodule Block, which enters, lets out energy state, and capacitance voltage declines.
8. direct current submodule as claimed in claim 1, it is characterised in that replaced using IGCT, IGCT, IEGT or MOSFET IGBT;
When replacing IGBT using IGCT, the anode correspondence IGBT of IGCT colelctor electrode, the negative electrode correspondence IGBT of IGCT Emitter stage;
When replacing IGBT using IGCT, IGCT anode correspondence IGBT colelctor electrode, IGCT negative electrode correspondence IGBT transmitting Pole;
When replacing IGBT using IEGT, IEGT colelctor electrode correspondence IGBT colelctor electrode, IEGT negative electrode correspondence IGBT hair Emitter-base bandgap grading;
When replacing IGBT using MOSFET, MOSFET drain electrode correspondence IGBT colelctor electrode, MOSFET source electrode correspondence IGBT Emitter stage.
CN201710339050.6A 2017-05-15 2017-05-15 A kind of direct current submodule CN106981975A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0798857A2 (en) * 1996-03-25 1997-10-01 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Direct current regulator
US5946178A (en) * 1995-03-02 1999-08-31 Abb Research Ltd. Protective circuit for series-connected power semiconductors
CN103986177A (en) * 2014-05-09 2014-08-13 华北电力大学 LCC-HVDC topological structure into which controllable sub-modules are connected in series
CN104009450A (en) * 2014-05-07 2014-08-27 华南理工大学 Module combination high-voltage direct-current breaker
CN204068699U (en) * 2014-09-11 2014-12-31 华南理工大学 A kind of MMC submodule with direct-current short circuit fault self-cleaning ability

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5946178A (en) * 1995-03-02 1999-08-31 Abb Research Ltd. Protective circuit for series-connected power semiconductors
EP0798857A2 (en) * 1996-03-25 1997-10-01 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Direct current regulator
CN104009450A (en) * 2014-05-07 2014-08-27 华南理工大学 Module combination high-voltage direct-current breaker
CN103986177A (en) * 2014-05-09 2014-08-13 华北电力大学 LCC-HVDC topological structure into which controllable sub-modules are connected in series
CN204068699U (en) * 2014-09-11 2014-12-31 华南理工大学 A kind of MMC submodule with direct-current short circuit fault self-cleaning ability

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