CN107612397B - Capacitance clamping sub-module, modularized multi-level converter applying same and working method - Google Patents
Capacitance clamping sub-module, modularized multi-level converter applying same and working method Download PDFInfo
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Abstract
The invention provides a capacitance clamping sub-module, a modularized multi-level converter using the same and a working method thereof, wherein the sub-module comprises a transistorT 1 、T 2 、T 3 Three diodesD 1 、D 2 、D 3 A capacitorC. Wherein, the liquid crystal display device comprises a liquid crystal display device,T 1 、T 2 、T 3 respectively with the collector electrodes of (a)D 1 、D 2 、D 3 Is connected to the cathode of the (c) battery,T 1 、T 2 、T 3 emitter of (a) are respectively connected withD 1 、D 2 、D 3 Is connected to the anode of the battery. Capacitor with a capacitor bodyCPositive terminal and (2) of (c)T 1 The collecting electrodes of the sub-modules are connected, and the high-voltage output ends of the sub-modules are led out from the connection parts of the collecting electrodes; capacitor with a capacitor bodyCIs connected to the negative terminal of (2)T 2 Is connected to the emitter of (c).T 3 Collector and of (a)T 2 The collecting electrodes of the sub-modules are connected, and the low-voltage output ends of the sub-modules are led out from the connection positions of the collecting electrodes;T 3 emitter and emitter of (2)T 1 Is connected to the emitter of (c). The invention can effectively block the direct current fault current; after the fully-controlled device is locked, the free-wheeling action of the bridge arm reactor can be inhibited through the unidirectional conductivity of the diode, and the fault blocking capability is strong.
Description
Technical Field
The invention belongs to the technical field of direct-current transmission of power systems, and relates to a capacitor clamping sub-module, a modularized multi-level converter applying the capacitor clamping sub-module and a working method of the modularized multi-level converter.
Background
The modularized multi-level converter (Modular Multilevel Converter, MMC) adopts a submodule cascading structure, and has the advantages of low switching frequency, low loss, high waveform quality and the like. The traditional Half-bridge Sub-module (HBSM) structure has low manufacturing cost and mature technology, and the flexible direct current transmission project put into operation in China almost adopts an MMC structure based on the Half-bridge Sub-module. When a short circuit fault occurs in a direct current line, fault current can be rapidly increased due to the capacitance discharge of the submodule and the energy feedback effect of an alternating current system, and the safety of equipment such as an inverter is threatened, so that the fault current must be immediately cut off. The diodes in the half-bridge sub-module do not have the ability to cut off fault current, since they can form a current path between the ac side and the fault point.
At present, in the method for processing MMC direct current faults, although the technology of a tripping alternating current breaker is mature, the defects of low response speed, long fault recovery time and the like exist; the high-voltage direct-current circuit breaker faces the technical problems of insufficient breaking voltage level, insufficient capacity and the like, and is not applied to actual engineering; the fault current is blocked by improving the topological structure of the submodule and controlling the on-off of the power electronic device in the submodule, mechanical switching is not needed, the system recovery speed is high, and the method has great research value and application prospect.
The Quan Qiaozi module and the clamping double sub-module all have direct current fault blocking capability. The Quan Qiaozi module has twice the number of devices as the half-bridge sub-module, and has higher operation loss. A pair of IGBT anti-parallel diodes used for connecting two half-bridge structures in the clamping double sub-module is required to be in a conducting state all the time in normal operation, and parameters such as current capacity, operation loss, device junction temperature and the like are higher than those of other semiconductor devices. Therefore, a submodule structure with better comprehensive performance needs to be studied.
Disclosure of Invention
Aiming at the problems of high loss of components, continuous conduction and the like of a submodule in the prior art, the invention provides a capacitor clamping submodule, a modularized multi-level converter applying the capacitor clamping submodule and a working method thereof; the power devices in the capacitance clamping submodules can be conducted in a balanced mode when the submodules are in a put-in and cut-out state; the modularized multi-level converter adopting the same as the sub-module has direct current fault current blocking capability.
The invention adopts the following technical scheme: a capacitance-clamping sub-module includes first to third transistors T 1 ～T 3 Capacitor C and first to third diodes D 1 ～D 3 The method comprises the steps of carrying out a first treatment on the surface of the The positive terminal of the capacitor C and the first transistor T 1 The collecting electrode of the sub-module is connected with the collecting electrode of the sub-module, and a high-voltage output end M of the sub-module is led out from the joint of the collecting electrode and the collecting electrode; the negative terminal of the capacitor C and the second transistor T 2 Is connected with the emitter of the (C); third transistor T 3 Collector of (a) and the second transistor T 2 The collecting electrode of the sub-module is connected with the collecting electrode of the sub-module, and a low-voltage output end N of the sub-module is led out from the connecting position of the collecting electrode and the collecting electrode; third transistor T 3 Emitter and first crystal of (a)Tube T 1 Is connected with the emitter of the (C); first diode D 1 Anode and first transistor T 1 Emitter connection of (a); first diode D 1 Cathode and first transistor T 1 Is connected with the collector electrode; second diode D 2 Anode and second transistor T 2 Emitter connection of (a); second diode D 2 Cathode and second transistor T 2 Is connected with the collector electrode; third diode D 3 Anode and third transistor T 3 Emitter connection of (a); third diode D 3 Cathode and third transistor T 3 Is connected to the collector of the capacitor.
In one embodiment of the present invention, the first to third transistors T 1 ～T 3 Are all insulated gate bipolar transistors.
The invention also provides a modularized multi-level converter applying the capacitor clamping sub-module, which comprises A, B, C three phases; each phase comprises an upper bridge arm and a lower bridge arm; each bridge arm is formed by cascading N capacitance clamping sub-modules, and each bridge arm is connected with a bridge arm reactor in series; n is a natural number not less than 1.
The invention also provides a working method of the capacitor clamping sub-module, which comprises the steps of inputting and cutting off two operation states; the input state is as follows: second transistor T 2 Turn on, the first transistor T 1 Third transistor T 3 Turn off with output level +u c The method comprises the steps of carrying out a first treatment on the surface of the When the current i is input MN >At 0, the current path is: m → capacitor C → second diode D 2 N, capacitor charging; i.e MN <At 0, the current path is: n→second transistor T 2 Capacitor C-M, capacitor discharge; the excision status is: second transistor T 2 Turn off, the first transistor T 1 Third transistor T 3 Opening, wherein the output level is 0; input current i MN >At 0, the current path is: m→first transistor T 1 Third diode D 3 N, the capacitance is bypassed; when the current i is input MN <At 0, the current path is: n→third transistor T 3 First diode D 1 The capacitance is bypassed.
In one embodiment of the present invention, the method further comprises a locking operation state: when a DC short circuit fault occurs, all transistors are blocked.
In one embodiment of the invention, the capacitive clamping sub-module is applied to a modular multilevel converter, which comprises A, B, C three phases; each phase comprises an upper bridge arm and a lower bridge arm; each bridge arm is formed by cascading N capacitance clamping sub-modules, and each bridge arm is connected with a bridge arm reactor in series; n is a natural number not less than 1; when the modularized multi-level converter fails, the direction of the fault current is opposite to the positive direction of the diode, the loop presents a high-resistance state, and the capacitor clamping sub-module is in a locking operation state.
In one embodiment of the invention, when the bipolar short-circuit fault occurs in the modularized multi-level converter, all transistors in the converter are locked, and an energy feedback path is formed by an alternating current power supply, a bridge arm reactor, a submodule capacitor and a diode.
Further, the capacitive clamping sub-module latch includes the following workflow: 1) Capacitor C voltage of capacitor-embedded submodule after transistor locking is u c ' A.C. line voltage u ab Second diode D 2 The positive pressure drop at two ends is u d2 The method comprises the steps of carrying out a first treatment on the surface of the Neglecting the voltage drop of bridge arm reactors, the line resistance, the reactance voltage drop and the residual voltage of fault points, and obtaining by a kirchhoff voltage law:
2) Before a fault occurs, the AC-DC side of the converter meets the following dynamic relationship:
wherein u is l-l For AC line voltage, u k_peak Is the peak value of the alternating-current phase voltage, omega is the angle corresponding to the fundamental wave power frequencySpeed u c The capacitance voltage before failure is represented by m, which is the modulation ratio;
3) After the fault occurs and before the transistor is locked, the capacitor is discharged through the transistor, but because the discharging time is very short, the voltage of the capacitor is approximately unchanged before and after the locking, namely u c ’≈u c From formulas (1) (2) (3):
the system modulation ratio m <1, therefore there is:
as shown in the formula (5), after the direct-current bipolar short-circuit fault occurs, the transistor is locked quickly, the sum of the capacitance voltages of the submodules in the fault current loop is larger than the maximum value of the alternating-current line voltage, and the second diode D is connected in series in the loop 2 Is subjected to a reverse voltage and therefore there is virtually no fault current path, i.e. the energy feed to the ac side fault point is blocked.
Preferably, the first to third transistors T 1 ～T 3 Are all insulated gate bipolar transistors.
Compared with the prior art, the capacitance clamping submodule reduces 25% of power electronic devices compared with a full-bridge submodule, and has better economy; the three insulated gate bipolar transistors in the submodule have the same conduction time when the submodule is in the input and cut-off state, devices with special current passing capability are not needed, and the investment cost is reduced; the modularized multi-level converter adopting the capacitor clamping submodule can rapidly block direct-current fault current.
Drawings
FIG. 1 is a block diagram of a capacitor clamping sub-module according to the present invention.
Fig. 2 is a topology diagram of a modular multilevel converter employing the capacitor clamping sub-module structure of the present invention as a sub-module.
Fig. 3 is a schematic diagram of fault current blocking of the modular multilevel converter under a direct current side bipolar short circuit fault.
Fig. 4 is a diagram of an equivalent circuit of reactance freewheeling of a bridge arm of the flexible direct current transmission system after the IGBT is locked in a modular multilevel converter using the capacitor-embedded sub-module structure of the present invention as a sub-module.
Fig. 5 is a dc-side bipolar short-circuit fault dc current waveform.
Fig. 6 is a comparison chart of dc waveforms of bipolar short-circuit faults on the dc side of three kinds of flexible dc power transmission systems.
Detailed Description
The invention is further illustrated by the following description in conjunction with the accompanying drawings and specific embodiments.
FIG. 1 shows a capacitor-clamping sub-module comprising first to third transistors T 1 ～T 3 Capacitor C and first to third diodes D 1 ～D 3 The method comprises the steps of carrying out a first treatment on the surface of the The positive terminal of the capacitor C and the first transistor T 1 The collecting electrode of the sub-module is connected with the collecting electrode of the sub-module, and a high-voltage output end M of the sub-module is led out from the joint of the collecting electrode and the collecting electrode; the negative terminal of the capacitor C and the second transistor T 2 Is connected with the emitter of the (C); third transistor T 3 Collector of (a) and the second transistor T 2 The collecting electrode of the sub-module is connected with the collecting electrode of the sub-module, and a low-voltage output end N of the sub-module is led out from the connecting position of the collecting electrode and the collecting electrode; third transistor T 3 Emitter of (c) and first transistor T 1 Is connected with the emitter of the (C); first diode D 1 Anode and first transistor T 1 Emitter connection of (a); first diode D 1 Cathode and first transistor T 1 Is connected with the collector electrode; second diode D 2 Anode and second transistor T 2 Emitter connection of (a); second diode D 2 Cathode and second transistor T 2 Is connected with the collector electrode; third diode D 3 Anode and third transistor T 3 Emitter connection of (a); third diode D 3 Cathode and third transistor T 3 Is connected to the collector of the capacitor.
Preferably, the first to third transistors T 1 ～T 3 Are all insulated gate bipolar transistors.
The invention also provides a modularized multi-level converter applying the capacitor clamping sub-module, which comprises A, B, C three phases; each phase comprises an upper bridge arm and a lower bridge arm; each bridge arm is formed by cascading N capacitance clamping sub-modules, and each bridge arm is connected with a bridge arm reactor in series; n is a natural number not less than 1. The main circuit topology is seen in fig. 2.
The invention also provides a working method of the capacitor clamping sub-module, and the sub-module has two operating states of input and cut-off when in normal operation. When T is 2 Turn on, T 1 、T 3 When the power-off is performed, the submodule is in a switching-on state, and the output level is +u c The method comprises the steps of carrying out a first treatment on the surface of the When T is 2 Turn off, T 1 、T 3 When the sub-module is on, the sub-module is in a cut-off state, and the output level is 0. When the sub-module is in the input state, i MN >At 0, the current path is: m, C and D 2 N, capacitor charging; i.e MN <At 0, the current path is: N.fwdarw.T 2 C-M, the capacitor discharges. When the sub-module is in the cut-out state, i MN >At 0, the current path is: M.fwdarw.T 1 →D 3 N, the capacitance is bypassed; i.e MN <At 0, the current path is: N.fwdarw.T 3 →D 1 The capacitance is bypassed.
In one embodiment of the present invention, the method further comprises a locking operation state: when a DC short circuit fault occurs, all transistors are blocked.
Applying the capacitive clamping sub-module to a modular multilevel converter, the modular multilevel converter comprising A, B, C three phases; each phase comprises an upper bridge arm and a lower bridge arm; each bridge arm is formed by cascading N capacitance clamping sub-modules, and each bridge arm is connected with a bridge arm reactor in series; n is a natural number not less than 1; when the modularized multi-level converter fails, the direction of the fault current is opposite to the positive direction of the diode, the loop presents a high-resistance state, and the capacitor clamping sub-module is in a locking operation state.
After a direct current short circuit fault occurs, all Insulated Gate Bipolar Transistors (IGBT) in the converter are blocked, and a reverse voltage is formed on the series diode by using the difference value of the capacitor voltage and the alternating current line voltage to block an energy feedback path between the alternating current side and a fault point. The analysis is performed using a bipolar short circuit fault as an example. When bipolar short-circuit fault occurs, all IGBTs in the converter are locked, but an energy feedback path consisting of an alternating current power supply, a bridge arm reactor, a submodule capacitor and a diode still exists. Taking A, B as an example, the paths of the energy feed to the side fault points of the alternating current which can be formed are shown in fig. 3.
As can be seen from fig. 3 (a), the fault current flows through the reactance L of the lower bridge arm of phase a when the phase a alternating current is greater than zero na Sub-module capacitor C, diode D 2 Fault point, B-phase upper bridge arm diode D 2 Sub-module capacitance, bridge arm reactance L pb . Let the capacitance voltage of the sub-module after IGBT latch-up be u c ' A.C. line voltage u ab Diode D 2 The positive pressure drop at two ends is u d2 . Neglecting the voltage drop of bridge arm reactors, the line resistance, the reactance voltage drop and the residual voltage of fault points, and obtaining by the kirchhoff voltage law:
before a fault occurs, the ac-dc side of the Modular Multilevel (MMC) converter satisfies the following dynamic relationship:
wherein u is l-l For AC line voltage, u k_peak Is the peak value of the alternating-current phase voltage, omega is the angular velocity corresponding to fundamental wave power frequency, u c The capacitance voltage before failure is represented by m, which is the modulation ratio. After the fault occurs and before the IGBT is locked, the capacitor is discharged through the IGBT, but the discharge time is very short, the voltage of the capacitor is considered to be approximately unchanged before and after the locking, namely u c ’≈u c From formulas (1) (2) (3):
in the normal case, the system modulation ratio m <1, therefore there is:
as can be seen from the formula (5), the IGBT is locked immediately after the DC bipolar short-circuit fault occurs, the sum of the series connection of the capacitance voltages of the submodules in the fault current loop is larger than the maximum value of the AC line voltage, and the diode D is connected in series in the loop 2 Is subjected to a reverse voltage and therefore there is virtually no fault current path, i.e. the energy feed to the ac side fault point is blocked. The phase a alternating current is less than zero and the fault current loop is shown in fig. 3 (b), which analysis is similar to the current being greater than zero.
An equivalent circuit of bridge reactance freewheeling of the flexible direct current transmission system after the IGBT is locked in the modularized multi-level converter taking the capacitor clamping sub-module structure as the sub-module is shown in figure 4. The direction of the follow current of the fault current is opposite to the positive direction of the diode, the loop presents a high-resistance state, and the follow current path of the fault current is blocked. After the IGBT is locked, the MMC adopting the full-bridge sub-module and the clamping double sub-modules has a follow current loop for charging the capacitor by the bridge arm reactor in an equivalent circuit of the flexible direct current system, so that the time for the fault current to decay to zero is longer than that of the MMC adopting the capacitance clamping sub-module, and the capacity of the capacitance clamping sub-module for blocking the direct current fault current is stronger.
The present invention is described in detail below by way of examples, which are necessary to be pointed out herein for further illustration only and are not to be construed as limiting the scope of the invention, as many insubstantial modifications and adaptations of the invention as described above will be within the skill of the art.
Examples:
the main system parameters of a modularized multi-level converter flexible direct current transmission system adopting the capacitor clamping sub-module provided by the invention are shown in table 1. And building a corresponding flexible direct current transmission system model in PSCAD/EMTDC simulation software.
TABLE 1 Main parameters of Flexible DC Transmission System
In order to verify that the modularized multi-level converter adopting the invention as the sub-module has the capability of blocking direct current fault current, the flexible direct current system is arranged to firstly run in a normal state, and then a direct current side transient positive and negative pole short circuit fault occurs at the moment of 2.5 s. Considering the time delay of the fault detection system, the IGBTs of all the sub-modules in the modularized multi-level converter are all locked after the fault occurs for 2ms, and the current simulation waveform of the direct current side of the flexible direct current transmission is shown in figure 5. As can be seen from fig. 5, the dc fault current rapidly rises to a large value (about 5.8 kA) at the moment of occurrence of the fault; after 2ms, the IGBT is locked, and the direct-current fault current immediately drops to zero at the moment, so that the modularized multi-level converter adopting the invention as the sub-module can effectively block the direct-current fault current.
In order to compare the modularized multi-level converter adopting the full-bridge sub-module and the clamping double sub-module structure as sub-modules with stronger fault blocking capability, the modularized multi-level converter adopting the full-bridge sub-module and the clamping double sub-module structure as sub-modules is respectively built in PSCAD/EMTDC simulation software, and the system parameters are all parameters in table 1. The flexible direct current transmission system of the modularized multi-level converter adopting the full-bridge sub-module and the clamping double sub-module structure as the sub-module is provided with the same faults as the flexible direct current transmission system of the modularized multi-level converter adopting the invention as the sub-module, and the IGBTs in the sub-module are locked after the same time delay. The dc fault current waveform pairs corresponding to the three flexible dc power transmission systems are shown in fig. 6. As can be seen from fig. 6, the dc fault current of the flexible dc power transmission system using the capacitor clamping sub-module is reduced to zero firstly, then the flexible dc power transmission system using the full-bridge sub-module is adopted, and finally the flexible dc power transmission system using the clamping double sub-module is adopted, which shows that the blocking capability of the modularized multi-level converter using the present invention as the sub-module to the dc fault current is stronger than that of the modularized multi-level converter using the full-bridge sub-module and the clamping double sub-module.
The above is a preferred embodiment of the present invention, and all changes made according to the technical solution of the present invention belong to the protection scope of the present invention when the generated functional effects do not exceed the scope of the technical solution of the present invention.
Claims (6)
1. A capacitive clamping sub-module, characterized by: comprising first to third transistorsT 1 ~T 3 CapacitorCFirst to third diodesD 1 ~D 3 ；
Capacitor with a capacitor bodyCPositive terminal of (1) and first transistorT 1 Is connected with the collector electrode of the sub-module and leads out the high-voltage output end of the sub-module at the joint of the collector electrode and the sub-moduleMThe method comprises the steps of carrying out a first treatment on the surface of the Capacitor with a capacitor bodyCNegative terminal of (2) and second transistorT 2 Is connected with the emitter of the (C); third transistorT 3 Collector electrode of (a) and second transistorT 2 Is connected with the collector electrode of the sub-module and leads out the low-voltage output end of the sub-module at the joint of the collector electrode and the sub-moduleNThe method comprises the steps of carrying out a first treatment on the surface of the Third transistorT 3 Emitter of (a) and first transistorT 1 Is connected with the emitter of the (C);
first diodeD 1 Anode and first transistorT 1 Emitter connection of (a); first diodeD 1 Cathode and first transistorT 1 Is connected with the collector electrode; second diodeD 2 Anode and second transistorT 2 Emitter connection of (a); second diodeD 2 Cathode and second transistorT 2 Is connected with the collector electrode; third diodeD 3 Anode and third transistorT 3 Emitter connection of (a); third diodeD 3 Cathode and third transistorT 3 Is connected with the collector electrode;
the working method of the capacitor clamping sub-module comprises the steps of inputting and cutting off two operation states;
the input state is as follows: second transistorT 2 Turn on, first transistorT 1 Third transistorT 3 Turn off, output level is +u c The method comprises the steps of carrying out a first treatment on the surface of the When inputting currenti MN >At 0, the current path is:M→capacitor with a capacitor bodyC→Second diodeD 2 →NCharging a capacitor;i MN <at 0, the current path is:N→second transistorT 2 →Capacitor with a capacitor bodyC→MDischarging the capacitor;
the excision status is: second transistorT 2 Turn off, the first transistorT 1 Third transistorT 3 Opening, wherein the output level is 0; input currenti MN >At 0, the current path is:M→first transistorT 1 →Third diodeD 3 →NThe capacitor is bypassed; when inputting currenti MN <At 0, the current path is:N→third transistorT 3 →First diodeD 1 →MThe capacitance is bypassed.
2. The capacitance clamping sub-module of claim 1, wherein: first to third transistorsT 1 ~T 3 Are all insulated gate bipolar transistors.
3. A modular multilevel converter employing the capacitive clamping sub-module of claim 1, characterized by: comprises A, B, C three phases; each phase comprises an upper bridge arm and a lower bridge arm; each bridge arm is formed by cascading N capacitance clamping sub-modules, and each bridge arm is connected with a bridge arm reactor in series; n is a natural number not less than 1.
4. A capacitive clamping sub-module according to claim 3, characterized in that: the method further comprises the steps of locking the operation state: when a DC short circuit fault occurs, all transistors are blocked.
5. A capacitive clamping sub-module according to claim 3, characterized in that: applying the capacitive clamping sub-module to a modular multilevel converter, the modular multilevel converter comprising A, B, C three phases; each phase comprises an upper bridge arm and a lower bridge arm; each bridge arm is formed by cascading N capacitance clamping sub-modules, and each bridge arm is connected with a bridge arm reactor in series; n is a natural number not less than 1; when the modularized multi-level converter fails, the direction of the fault current is opposite to the positive direction of the diode, the loop presents a high-resistance state, and the capacitor clamping sub-module is in a locking operation state.
6. The capacitive clamping sub-module of claim 5, wherein: when the bipolar short-circuit fault occurs in the modularized multi-level converter, all transistors in the converter are locked, and an energy feedback path is formed by an alternating current power supply, a bridge arm reactor, a submodule capacitor and a diode.
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| CN110224623B (en) * | 2019-06-12 | 2020-05-08 | 四川大学 | DC fault blocking modular multilevel converter and submodule |
| CN111917317B (en) * | 2020-07-03 | 2022-04-26 | 上海交通大学 | Flexible direct current converter capable of blocking direct current fault, submodule and protection method of flexible direct current converter |
| CN113824344B (en) * | 2021-11-01 | 2023-08-04 | 广东工业大学 | Doubly clamped self-blocking self-balancing sub-module and modularized multi-level converter |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103605850A (en) * | 2013-11-22 | 2014-02-26 | 国家电网公司 | MMC (modular multilevel converter) equivalent modeling method with module latching function |
| CN103731059A (en) * | 2013-06-13 | 2014-04-16 | 华北电力大学 | Novel double-clamping sub-module structure circuit of modular multilevel converter |
| CN104601017A (en) * | 2014-12-25 | 2015-05-06 | 清华大学 | Modularized multi-level converter being able to traverse direct current short circuit fault |
| CN104638615A (en) * | 2015-02-16 | 2015-05-20 | 天津大学 | Modular multilevel converter with direct-current fault isolation function and submodule thereof |
| KR20160117974A (en) * | 2015-04-01 | 2016-10-11 | 연세대학교 산학협력단 | Apparatus for protecting Capacitor over-voltage of DC fault blocking modules for sub module |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103731059A (en) * | 2013-06-13 | 2014-04-16 | 华北电力大学 | Novel double-clamping sub-module structure circuit of modular multilevel converter |
| CN103605850A (en) * | 2013-11-22 | 2014-02-26 | 国家电网公司 | MMC (modular multilevel converter) equivalent modeling method with module latching function |
| CN104601017A (en) * | 2014-12-25 | 2015-05-06 | 清华大学 | Modularized multi-level converter being able to traverse direct current short circuit fault |
| CN104638615A (en) * | 2015-02-16 | 2015-05-20 | 天津大学 | Modular multilevel converter with direct-current fault isolation function and submodule thereof |
| KR20160117974A (en) * | 2015-04-01 | 2016-10-11 | 연세대학교 산학협력단 | Apparatus for protecting Capacitor over-voltage of DC fault blocking modules for sub module |
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