CN108092536A - A kind of five flat current transformer of device mixed type active clamper - Google Patents
A kind of five flat current transformer of device mixed type active clamper Download PDFInfo
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- CN108092536A CN108092536A CN201711442097.1A CN201711442097A CN108092536A CN 108092536 A CN108092536 A CN 108092536A CN 201711442097 A CN201711442097 A CN 201711442097A CN 108092536 A CN108092536 A CN 108092536A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/487—Neutral point clamped inverters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Inverter Devices (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a kind of five flat current transformer of device mixed type active clamper, which uses A, B, C three-phase circuit structure, and the current transformer is made of filter circuit, switching device and capacitor；The switching device is managed by SiC MOSFET, the mixing of silicon substrate IGBT module forms.The present invention effectively plays the high frequency characteristics of SiC MOSFET pipes, reduces the capacity of suspension clamp capacitor and output filter circuit size, and reduces the switching loss of power frequency operation pattern IGBT；The method of operation of five level increases equivalent switching frequency, reduces the volume of passive device, and reduces the resistance to pressure request of each device；The current transformer output waveform quality is good, and circuit anti-interference performance is strong, and operational efficiency is high and at low cost.Using the device of the prior art and existing market, DC power supply can reach 7.5kV grades, it can be achieved that high voltage, high-frequency and high power density, suitable for middle-high voltage converter field；If by the direct serial connection technology of device, current transformer working voltage is also by higher.
Description
Technical field
The present invention relates to Multilevel Inverters technical field more particularly to a kind of five flat unsteady flows of device mixed type active clamper
Device.
Background technology
In recent years, the capacity of wind electric converter rises to 10MW grades by MW, it is clear that with the rising of single-machine capacity, originally
Two level current transformer circuits of 690V can not meet this high current application scenario.Therefore, more common method is at present
The DC voltage of current transformer is improved, however, the IGBT module of more high voltage becomes the characteristic for making current transformer and overall efficiency very
Difference, can not large-scale promotion, the then application of three clamping even more high level current transformers increasingly attracts attention.More level
Current transformer has output waveform quality good, equivalent switching frequency is high, system effectiveness height etc. as a kind of high-voltage large-capacity current transformer
Advantage, but the MW grade converter switches frequencies based on high pressure silicon substrate IGBT module are only capable of within several kHz, and filter circuit is passive
Device volume is larger, and power density is difficult to improve.If novel high speed SiC MOSFET is selected to be mixed with silicon substrate IGBT module,
The advantages of the two being utilized respective, realize high voltage, high frequency and high power density, and cost is relatively low.Up to the present, although
Only 1200V and 1700V SiC MOSFET have some commercially produced products, and higher voltage grade silicon carbide device is also in experiment
Room conceptual phase, but with the silicon carbide device development with serial connection technology in itself, high voltagehigh frequency silicon carbide device will be using will be more next
It is more universal.In addition, to overcome the problems, such as that capacity increase and DC voltage are continuously improved, Multilevel Inverters will progressively substitute complexity
With the power frequency isolation transformer of high cost, it is increasingly being applied to that high voltage converter, direct-current grid etc. be high-power, mesohigh
Field.
The content of the invention
To solve the above-mentioned problems, the invention discloses a kind of five flat current transformer of device mixed type active clamper, using silicon
The components such as base IGBT module and SiC MOSFET pipes mix, and reduce cost, have played the characteristic of each component, improved electricity
The efficiency of road operation.
In order to achieve the above object, technical scheme is as follows：
A kind of five flat current transformer of device mixed type active clamper, the current transformer use A, B, C three-phase circuit structure, each mutually electricity
Road is identical, and connection mode is identical；The current transformer is made of filter circuit, switching device and capacitor；The switching device by
SiC MOSFET pipes, silicon substrate IGBT module mixing composition；Each circuitry phase includes 1 wave filter L, 4 SiC MOSFET pipes MT1、
MT2、MT3、MT4, 4 silicon substrate IGBT module IT1、IT2、IT3、IT4With 3 capacitor C1、C2、C3；IT1C poles and public direct-current
Positive bus-bar connects, IT1E poles and IT2C poles connection, IT2E poles and IT3C poles connection, IT3E poles and IT4C poles connect
It connects, IT4E poles be connected with public direct-current negative busbar, capacitance C2To connect public direct-current positive bus-bar and clamper respectively neutral at both ends
Point, capacitance C3Both ends connect public direct-current negative busbar and clamper neutral point respectively；IT1E poles and MT1D poles connection, MT1's
S poles and MT2D poles connection, MT2S poles and MT3D poles connection, MT3S poles and MT4D poles connection, MT4S poles and IT3's
E poles connect, capacitance C1Both ends connect MT respectively1S poles and MT3S poles；MT2S poles as exchange output point；IT2E poles
Clamper neutral point as converter circuit；Each cross streams output point connection respective filter L one end, each phase filter L's is another
One end is exchange side tie point, independently of each other, and connects each phase external ac power source U or load；The clamper of each circuitry phase is neutral
Point is all connected with common DC bus midpoint.
Preferably, the silicon substrate IGBT module includes anti-paralleled diode.
Preferably, the capacitance C2And C3Capacitance it is equal.
Preferably, the filter circuit L can be inductance L-type or LC types or LCL type.
Preferably, the SiC MOSFET pipes and silicon substrate IGBT module mixing composition switching device, according to different voltage
Grade, the switching device can be managed by 650V, 1200V, 1700V, 3300V, 6500V silicon substrate IGBT module or SiC MOSFET
It is one or more in series.
Compared with prior art, the beneficial effects of the invention are as follows a kind of device mixed type active clampers five of the present invention
Flat current transformer：(1) circuit medium-high frequency switch has used SiC MOSFET to manage, and the high frequency for effectively playing SiC MOSFET pipes is special
Property, the loss of switch is reduced, reduces the capacity of suspension clamp capacitor and output filter circuit size；(2) IGBT moulds are utilized
The power frequency operation mode and low drop-out nature of block reduce the switching loss and conduction loss of IGBT module；The operation of (3) five level
Mode effectively increases the frequency of equivalent switch, reduces the volume of the passive device of output filter circuit, and reduces single device
The resistance to pressure request of part；(4) output waveform quality is preferable, and circuit anti-interference performance is strong, and operational efficiency is high, at low cost.
Description of the drawings
Fig. 1：Device mixed type active clamper Five-level converter circuit diagram；
Fig. 2：During forward current, V0Circuit circulation figure under on off state；
Fig. 3：During forward current, V1Circuit circulation figure under on off state；
Fig. 4：During forward current, V2Circuit circulation figure under on off state；
Fig. 5：During forward current, V3Circuit circulation figure under on off state；
Fig. 6：During forward current, V4Circuit circulation figure under on off state；
Fig. 7：During forward current, V5Circuit circulation figure under on off state；
Fig. 8：During forward current, V6Circuit circulation figure under on off state；
Fig. 9：During forward current, V7Circuit circulation figure under on off state；
Figure 10：During reverse current, V0Circuit circulation figure under on off state；
Figure 11：During reverse current, V1Circuit circulation figure under on off state；
Figure 12：During reverse current, V2Circuit circulation figure under on off state；
Figure 13：During reverse current, V3Circuit circulation figure under on off state；
Figure 14：During reverse current, V4Circuit circulation figure under on off state；
Figure 15：During reverse current, V5Circuit circulation figure under on off state；
Figure 16：During reverse current, V6Circuit circulation figure under on off state；
Figure 17：During reverse current, V7Circuit circulation figure under on off state；
Symbol description：
La：Filter circuit；
Ca1~Ca3：Capacitance；
MTa1~MTa4：SiC MOSFET are managed；
ITa1~ITa4:Silicon substrate IGBT module (contains anti-paralleled diode).
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment belongs to the scope of protection of the invention.
A kind of five flat current transformer of device mixed type active clamper disclosed by the invention, the current transformer use A, B, C three-phase electricity
Line structure, each circuitry phase is identical, and connection mode is identical；The current transformer is made of filter circuit, switching device and capacitor；Institute
Switching device is stated to be made of SiC MOSFET pipes, the mixing of silicon substrate IGBT module；Current transformer in the present embodiment is by 3 filtered electricals
Road, 12 SiC MOSFET pipes, 12 silicon substrate IGBT modules and 9 capacitor compositions；Each circuitry phase includes 1 wave filter L, 4
A SiC MOSFET pipes MT1、MT2、MT3、MT4, 4 silicon substrate IGBT module IT1、IT2、IT3、IT4With 3 capacitor C1、C2、C3；
IT1C poles be connected with public direct-current positive bus-bar, IT1E poles and IT2C poles connection, IT2E poles and IT3C poles connection, IT3
E poles and IT4C poles connection, IT4E poles be connected with public direct-current negative busbar, capacitance C2Both ends connect public direct-current respectively
Positive bus-bar and clamper neutral point, capacitance C3Both ends connect public direct-current negative busbar and clamper neutral point respectively；IT1E poles with
MT1D poles connection, MT1S poles and MT2D poles connection, MT2S poles and MT3D poles connection, MT3S poles and MT4D poles connect
It connects, MT4S poles and IT3E poles connection, capacitance C1Both ends connect MT respectively1S poles and MT3S poles；MT2S poles as hand over
Flow output point；IT2Clamper neutral point of the E poles as converter circuit；Each cross streams output point connection respective filter L mono-
End, the other end of each phase filter L is exchange side tie point, independently of each other, and connects each phase external ac power source U or load；
The DC side positive and negative busbar tie point of each circuitry phase is all connected with corresponding public direct-current positive and negative busbar tie point；The pincers of each circuitry phase
Position neutral point is all connected with common DC bus midpoint.
Further improvement of the present invention, the silicon substrate IGBT module include anti-paralleled diode, are the circulation of bidirectional current
Passage is provided, reduces switching loss and conduction loss.
Further improvement of the present invention, capacitance C2And C3Capacitance it is equal, and normal operating voltage is of substantially equal, reduces
Suspension clamp capacitor C1Capacity, and flying capacitor C1Both end voltage is approximately equal to capacitance C2The half of both end voltage.
Further improvement of the present invention, the filter circuit L can be inductance L-type or LC types or LCL type.
Further improvement of the present invention, the SiC MOSFET pipes and silicon substrate IGBT module mixing composition switching device, root
According to different voltage class, the switching device can by 650V, 1200V, 1700V, 3300V, 6500V silicon substrate IGBT module or
SiC MOSFET pipe one or more is in series, passes through the single or multiple direct strings of the switching device of different voltages grade
Connection improves the voltage of current transformer operation, meets various high-voltage great-current application scenarios.
As described in Figure 1, by taking A circuitry phases as an example, A circuitry phases include 1 wave filter La, 4 SiC MOSFET pipes MTa1、
MTa2、MTa3、MTa4, 4 silicon substrate IGBT module ITa1、ITa2、ITa3、ITa4With 3 capacitor Ca1、Ca2、Ca3；ITa1C poles with
Public direct-current positive bus-bar connects, ITa1E poles and ITa2C poles connection, ITa2E poles and ITa3C poles connection, ITa3E poles with
ITa4C poles connection, ITa4E poles be connected with public direct-current negative busbar, capacitance Ca2Both ends connect public direct-current positive bus-bar respectively
With clamper neutral point, capacitance Ca3Both ends connect public direct-current negative busbar and clamper neutral point respectively；ITa1E poles and MTa1D
Pole connects, MTa1S poles and MTa2D poles connection, MTa2S poles and MTa3D poles connection, MTa3S poles and MTa4D poles connect
It connects, MTa4S poles and ITa3E poles connection, capacitance Ca1Both ends connect MT respectivelya1S poles and MTa3S poles；MTa2S poles make
To exchange output point；ITa2Clamper neutral point of the E poles as converter circuit；The exchange output point connection wave filter LaOne
End, wave filter LaOther end connection external ac power source UAThe clamper neutral point is connected with common DC bus midpoint, described
Capacitance Ca2And Ca3Capacitance it is equal, and normal operating voltage is of substantially equal, flying capacitor Ca1Both end voltage is approximately equal to capacitance Ca2Two
The half of terminal voltage.B, C circuitry phases are identical with A circuitry phases, and B, C circuit wiring pattern are identical with A circuitry phases.
A kind of operation principle of five flat current transformer of device mixed type active clamper of the present invention：By taking A circuitry phases as an example, it is assumed that outstanding
Floating capacitance Ca1Voltage be Vdc, capacitance Ca2And Ca3On voltage be 2Vdc, common DC bus total voltage is 4Vdc.Due to
SiC MOSFET pipes MTa1、MTa2, silicon substrate IGBT module ITa1、ITa3Respectively with SiC MOSFET pipes MTa4、MTa3, silicon substrate IGBT moulds
Block ITa2、ITa4Complementation, so SiC MOSFET pipes MTa1、MTa2, silicon substrate IGBT module ITa1、ITa3The on off state of expression with it is right
The SiC MOSFET pipes MT answereda4、MTa3, silicon substrate IGBT module ITa2、ITa4The on off state of expression is opposite.
By taking A phase currents flow into current transformer as an example, by table 1SiC MOSFET pipes MTa1、MTa2, silicon substrate IGBT module ITa1、ITa3
The on off state of expression can be seen that current transformer of the present invention shares eight kinds of different on off states, different at this eight kinds
Under on off state, -2V can be exporteddc、-Vdc、0、Vdc、2VdcFive kinds of different level, the ladder realized between more level turn
It changes.Similarly, B, C circuitry phase also respectively have 8 kinds of different on off states.The method of operation of five level effectively increases equivalent switch frequency
Rate reduces the volume of the passive device of filter circuit, reduces the resistance to pressure request of device.
During forward current, specific current flowing process of the output level under different on off states is as follows：
As shown in Fig. 2, switch is in V0During state：Electric current is by A phase power supplys UAAnode input, pass through A phase filters La,
Then MT is passed through respectivelya3Passage, MTa4Passage, ITa4IGBT and capacitance Ca3, eventually passing back to earth point, (i.e. A phases power supply is negative
End), the anode of A phase power supplys is then returned to by power supply, output voltage is -2Vdc。
As shown in figure 3, switch is in V1During state：Electric current is by A phase power supplys UAAnode input, pass through A phase filters La,
Then MT is passed through respectivelya2The MT of backward dioded or synchronous rectification patterna2Passage, capacitance Ca1、MTa4Passage, ITa4IGBT and
Capacitance Ca3, earth point (i.e. the negative terminal of A phases power supply) is eventually passed back to, the anode of A phase power supplys, output voltage are then returned to by power supply
For-Vdc。
As shown in figure 4, switch is in V2During state：Electric current is by A phase power supplys UAAnode input, pass through A phase filters La,
Then MT is passed through respectivelya3Passage, capacitance Ca1、MTa1The MT of backward dioded or synchronous rectification patterna1Passage, ITa2IGBT,
Earth point (i.e. the negative terminal of A phases power supply) is eventually passed back to, the anode of A phase power supplys is then returned to by power supply, output voltage is-Vdc。
As shown in figure 5, switch is in V3During state：Electric current is by A phase power supplys UAAnode input, pass through A phase filters La,
Then MT is distinguisheda2The MT of backward dioded or synchronous rectification patterna2Passage, MTa1Backward dioded or synchronous rectification pattern
MTa1Passage, ITa2IGBT, eventually pass back to earth point (i.e. the negative terminal of A phases power supply), A phases power supply then returned to just by power supply
End, output voltage 0.
As shown in fig. 6, switch is in V4During state：Electric current is by A phase power supplys UAAnode input, pass through A phase filters La,
Then MT is passed through respectivelya3Passage, MTa4Passage, ITa3Backward dioded, eventually pass back to earth point (i.e. the negative terminal of A phases power supply),
Then the anode of A phase power supplys, output voltage 0 are returned to by power supply.
As shown in fig. 7, switch is in V5During state：Electric current is by A phase power supplys UAAnode input, pass through A phase filters La,
Then MT is passed through respectivelya2The MT of backward dioded or synchronous rectification patterna2Passage, capacitance Ca1、MTa4Passage, ITa3Reversed two
Pole pipe eventually passes back to earth point (i.e. the negative terminal of A phases power supply), and the anode of A phase power supplys is then returned to by power supply, and output voltage is
Vdc。
As shown in figure 8, switch is in V6During state：Electric current is by A phase power supplys UAAnode input, pass through A phase filters La,
Then MT is passed through respectivelya3Passage, capacitance Ca1、MTa1The MT of backward dioded or synchronous rectification patterna1Passage, ITa1Reversed two
Pole pipe and capacitance Ca2, earth point (i.e. the negative terminal of A phases power supply) is eventually passed back to, the anode of A phase power supplys is then returned to by power supply, is exported
Voltage is Vdc。
As shown in figure 9, switch is in V7During state：Electric current is by A phase power supplys UAAnode input, pass through A phase filters La,
Then MT is passed through respectivelya2The MT of backward dioded or synchronous rectification patterna2Passage, MTa1Backward dioded or synchronous rectification pattern
MTa1Passage, ITa1Backward dioded and capacitance Ca2, earth point (i.e. the negative terminal of A phases power supply) is eventually passed back to, then by power supply
Return to the anode of A phase power supplys, output voltage 2Vdc。
During 1 forward current of table, the on off state and current status of device mixed type active clamper Five-level converter
| ITa1 | ITa3 | MTa1 | MTa2 | U0 | i1 | i2 | On off state |
| 0 | 0 | 0 | 0 | -2Vdc | 0 | 0 | V0 |
| 0 | 0 | 0 | 1 | -Vdc | i0 | 0 | V1 |
| 0 | 0 | 1 | 0 | -Vdc | -i0 | i0 | V2 |
| 0 | 0 | 1 | 1 | 0 | 0 | i0 | V3 |
| 1 | 1 | 0 | 0 | 0 | 0 | i0 | V4 |
| 1 | 1 | 0 | 1 | Vdc | i0 | i0 | V5 |
| 1 | 1 | 1 | 0 | Vdc | -i0 | 0 | V6 |
| 1 | 1 | 1 | 1 | 2Vdc | 0 | 0 | V7 |
During reverse current, specific current flowing process of the output level under different on off states is as follows：
As shown in Figure 10, in switch V0During state：Electric current is inputted by earth point (i.e. the negative terminal of A phases power supply), is led to respectively
Cross capacitance Ca3、ITa4Anti-paralleled diode, MTa4The MT of backward dioded or synchronous rectification patterna4Passage and MTa3Reversed two pole
The MT of pipe or synchronous rectification patterna3Then passage passes through A phase filters La, eventually pass back to A phase power supplys UAAnode, i.e., by electricity
The negative terminal in source returns to earth point, and output voltage is -2Vdc。
As shown in figure 11, in switch V1During state：Electric current is inputted by earth point (i.e. the negative terminal of A phases power supply), is led to respectively
Cross capacitance Ca3、ITa4Anti-paralleled diode, MTa4The MT of backward dioded or synchronous rectification patterna4Passage, capacitance Ca1And MTa2It is logical
Then road passes through A phase filters La, eventually pass back to A phase power supplys UAAnode, i.e., earth point is returned to by the negative terminal of power supply, output electricity
It presses as-Vdc。
As shown in figure 12, in switch V2During state：Electric current is inputted by earth point (i.e. the negative terminal of A phases power supply), is led to respectively
Cross ITa2Anti-paralleled diode, MTa1Passage, capacitance Ca1And MTa3The MT of backward dioded or synchronous rectification patterna3Passage, then
Pass through A phase filters La, eventually pass back to A phase power supplys UAAnode, i.e., earth point is returned to by the negative terminal of power supply, output voltage for-
Vdc。
As shown in figure 13, in switch V3During state：Electric current is inputted by earth point (i.e. the negative terminal of A phases power supply), is led to respectively
Cross ITa2Anti-paralleled diode, MTa1Passage and MTa2Then passage passes through A phase filters La, eventually pass back to A phase power supplys UAJust
End, i.e., return to earth point, output voltage 0 by the negative terminal of power supply
As shown in figure 14, in switch V4During state：Electric current is inputted by earth point (i.e. the negative terminal of A phases power supply), is led to respectively
Cross ITa3IGBT, MTa4The MT of backward dioded or synchronous rectification patterna4Passage and MTa3Backward dioded or synchronous rectification mould
The MT of formulaa3Then passage passes through A phase filters La, eventually pass back to A phase power supplys UAAnode, i.e., returned to and connect by the negative terminal of power supply
Place, output voltage 0.
As shown in figure 15, switch is in V5During state：Electric current is inputted by earth point (i.e. the negative terminal of A phases power supply), is led to respectively
Cross ITa3IGBT, MTa4The MT of backward dioded or synchronous rectification patterna4Passage, capacitance Ca1And MTa2Then passage passes through A
Phase filter La, eventually pass back to A phase power supplys UAAnode, i.e., earth point, output voltage V are returned to by the negative terminal of power supplydc。
As shown in figure 16, switch is in V6During state：Electric current is inputted by earth point (i.e. the negative terminal of A phases power supply), is led to respectively
Cross ITa1IGBT, MTa1Passage, capacitance Ca1And MTa3The MT of backward dioded or synchronous rectification patterna3Then passage passes through A
Phase filter La, eventually pass back to A phase power supplys UAAnode, i.e., earth point, output voltage V are returned to by the negative terminal of power supplydc。
As shown in figure 17, switch is in V7During state：Electric current is inputted by earth point (i.e. the negative terminal of A phases power supply), is led to respectively
Cross ITa1IGBT, MTa1Passage and MTa2Then passage passes through A phase filters La, eventually pass back to A phase power supplys UAAnode, i.e., by
The negative terminal of power supply returns to earth point, output voltage 2Vdc。
During 2 reverse current of table, the on off state and current status of device mixed type active clamper Five-level converter
| ITa1 | ITa3 | MTa1 | MTa2 | U0 | i1 | i2 | On off state |
| 0 | 0 | 0 | 0 | -2Vdc | 0 | 0 | V0 |
| 0 | 0 | 0 | 1 | -Vdc | -i0 | 0 | V1 |
| 0 | 0 | 1 | 0 | -Vdc | i0 | -i0 | V2 |
| 0 | 0 | 1 | 1 | 0 | 0 | -i0 | V3 |
| 1 | 1 | 0 | 0 | 0 | 0 | -i0 | V4 |
| 1 | 1 | 0 | 1 | Vdc | -i0 | -i0 | V5 |
| 1 | 1 | 1 | 0 | Vdc | i0 | 0 | V6 |
| 1 | 1 | 1 | 1 | 2Vdc | 0 | 0 | V7 |
B, C phase currents flow into current transformer, during forward and reverse electric current, specific electricity of each phase output level under different on off states
It is identical with A circuitry phases to flow the process of circulation.Current transformer control in the present embodiment is simple, and trouble point is low, and output waveform quality is high, energy
Enhance the stability of circuit, improve the operational efficiency of device and the economy of circuit.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention have the following claims and their equivalents restriction.
Claims (5)
1. a kind of five flat current transformer of device mixed type active clamper, it is characterised in that：The current transformer uses A, B, C three-phase circuit knot
Structure, each circuitry phase is identical, and connection mode is identical；The current transformer is made of filter circuit, switching device and capacitor；It is described to open
Device is closed to be made of SiC MOSFET pipes, the mixing of silicon substrate IGBT module；Each circuitry phase includes 1 wave filter L, 4 SiC
MOSFET pipes MT1、MT2、MT3、MT4, 4 silicon substrate IGBT module IT1、IT2、IT3、IT4With 3 capacitor C1、C2、C3；IT1C
Pole is connected with public direct-current positive bus-bar, IT1E poles and IT2C poles connection, IT2E poles and IT3C poles connection, IT3E poles with
IT4C poles connection, IT4E poles be connected with public direct-current negative busbar, capacitance C2Both ends connect respectively public direct-current positive bus-bar and
Clamper neutral point, capacitance C3Both ends connect public direct-current negative busbar and clamper neutral point respectively；IT1E poles and MT1D poles connect
It connects, MT1S poles and MT2D poles connection, MT2S poles and MT3D poles connection, MT3S poles and MT4D poles connection, MT4S
Pole and IT3E poles connection, capacitance C1Both ends connect MT respectively1S poles and MT3S poles；MT2S poles as exchange output point；
IT2Clamper neutral point of the E poles as converter circuit；Each cross streams output point connection respective filter L one end, it is each mutually to filter
The other end of device L is exchange side tie point, independently of each other, and connects each phase external ac power source U or load；The pincers of each circuitry phase
Position neutral point is all connected with common DC bus midpoint.
2. a kind of five flat current transformer of device mixed type active clamper according to claim 1, it is characterised in that：The silicon substrate
IGBT module includes anti-paralleled diode.
3. a kind of five flat current transformer of device mixed type active clamper according to claim 1, it is characterised in that：The capacitance C2
And C3Capacitance it is equal.
4. a kind of five flat current transformer of device mixed type active clamper according to claim 1, it is characterised in that：The filtered electrical
Road can be inductance L-type or LC types or LCL type.
5. a kind of five flat current transformer of device mixed type active clamper according to claim 4, it is characterised in that：According to different
Voltage class, the switching device can be by 650V, 1200V, 1700V, 3300V, 6500V silicon substrate IGBT module or SiC
MOSFET pipe one or more is in series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711442097.1A CN108092536A (en) | 2017-12-27 | 2017-12-27 | A kind of five flat current transformer of device mixed type active clamper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711442097.1A CN108092536A (en) | 2017-12-27 | 2017-12-27 | A kind of five flat current transformer of device mixed type active clamper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108092536A true CN108092536A (en) | 2018-05-29 |
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| CN111628670A (en) * | 2020-06-10 | 2020-09-04 | 杜凝晖 | SiC/Si hybrid ANPC five-level inverter topological structure |
| WO2022226942A1 (en) * | 2021-04-29 | 2022-11-03 | Huawei Technologies Co., Ltd. | Converter for power conversion, three-phase converter arrangement and method for packaging a converter |
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