CN103219907A - Five-level inverter - Google Patents
Five-level inverter Download PDFInfo
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- CN103219907A CN103219907A CN2013100909838A CN201310090983A CN103219907A CN 103219907 A CN103219907 A CN 103219907A CN 2013100909838 A CN2013100909838 A CN 2013100909838A CN 201310090983 A CN201310090983 A CN 201310090983A CN 103219907 A CN103219907 A CN 103219907A
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Abstract
The invention provides a five-level inverter. A first capacitor is connected with a second capacitor in series, and connecting points of the first capacitor and the second capacitor are capacitor midpoints; a first switch tube and a second switch tube are sequentially connected between the first capacitor and the second capacitor in series, a seventh switch tube and an eighth switch tube are sequentially connected between the first capacitor and the second capacitor in series, the first switch tube and the second switch tube are connected with a third node, and the seventh switch tube and the eighth switch tube are connected with a fourth node; a third switch tube is connected with a fourth switch tube in series, a fifth switch tube and a sixth switch tube are connected in series and then connected in parallel, a parallel branch is connected among the third node and the capacitor midpoints, the third switch tube and the fifth switch tube are connected with a first node, and the fourth switch tube and the sixth switch tube are connected with a second node; the first node is connected with the capacitor midpoints, and the second node is connected with the third node; and the other end of the third node is connected with one end of a filter, the other end of the filter is connected with the fourth node, and a first diode, a second diode, a third diode, a fourth diode, a fifth diode, a sixth diode, a seventh diode and an eighth diode are respectively and correspondingly connected with two ends of the first switch tube, the second switch tube, the third switch tube, the fourth switch tube, the fifth switch tube, the sixth switch tube, the seventh switch tube and the eighth switch tube in parallel. The five-level inverter can obviously reduce loss of a common five-level circuit and improves efficiency of the inverter.
Description
Technical field
The present invention relates to electric and electronic technical field, particularly, relate to a kind of inverter, especially a kind of five-electrical level inverter.
Background technology
Along with the continuous development of wind power generation, photovoltaic generation, UPS (uninterrupted power supply) technology, the requirement of inverter efficiency also more and more is much accounted of, so five-electrical level inverter just arises at the historic moment.
Such as, traditional five-electrical level inverter shown in Figure 1, it can export five level, compares with two level, tri-level circuit to have lower loss, can reduce the harmonic wave of output current simultaneously, reduces the output filter size.But as circuit output Vdc, Vdc/2,0 ,-Vdc/2 ,-during Vdc, tube current is not positive and negative, and shown in solid line and dotted arrow among Fig. 2-4, electric current all needs to have higher conduction loss through three power devices.
Summary of the invention
At defective of the prior art, the purpose of this invention is to provide a kind of five-electrical level inverter, reduce conduction loss, improve the efficient of inverter.
For achieving the above object, the invention provides a kind of five-electrical level inverter, comprise: first electric capacity, second electric capacity, first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube, the 7th switching tube, the 8th switching tube, first diode, second diode, the 3rd diode, the 4th diode, the 5th diode, the 6th diode, the 7th diode, the 8th diode and inductance, wherein:
Described first electric capacity and described second capacitances in series, and both tie points are the electric capacity mid point;
Described first switching tube, described second switch pipe are connected between described first electric capacity and described second electric capacity successively; Described first switching tube and described first electric capacity are connected in the 5th node, and described second switch pipe and described second electric capacity are connected in the 6th node; Described first switching tube and described second switch pipe are connected in the 3rd node;
Described the 7th switching tube and described the 8th switching tube are connected in series; Described the 7th switching tube is connected in described the 5th node, and described the 8th switching tube is connected in described the 6th node; Described the 7th switching tube and described the 8th switching tube are connected in the 4th node;
Described the 3rd switching tube and the series connection of described the 4th switching tube, described the 5th switching tube and the series connection of described the 6th switching tube, these two series arms are in parallel again, this parallel branch is connected between the 3rd node and the electric capacity mid point, wherein said the 3rd switching tube and described the 5th switching tube are connected in first node, and described the 4th switching tube and described the 6th switching tube are connected in Section Point; Described first node is connected to the electric capacity mid point, and described Section Point is connected to described the 3rd node; Described the 3rd node other end connects inductance one end;
Be connected described the 4th node after the described inductance other end and the load series connection;
Described first diode, second diode, the 3rd diode, the 4th diode, the 5th diode, the 6th diode, the 7th diode and the 8th diode correspond respectively to described first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube the 6th switching tube, the 7th switching tube and the 8th switching tube, and the corresponding two ends that are connected in parallel on each switching tube.
Preferably, the anode of described first diode is connected in the 3rd node, and the negative electrode of described first diode is connected in first electric capacity; The negative electrode of described second diode is connected in the 3rd node, and the anode of described second diode is connected in second electric capacity; The anode of described the 3rd diode is connected in described first node, and the negative electrode of described the 3rd diode is connected in the negative electrode of described the 4th switching tube and described the 4th diode, and the anode of described the 4th diode is connected to Section Point; The anode of described the 5th diode is connected in described the 6th switching tube and the 6th diode anode, and the negative electrode of described the 5th diode is connected in described first node, and the negative electrode of described the 6th diode is connected in described Section Point; The anode of described the 7th diode is connected in the 4th node, and the negative electrode of described the 7th diode is connected in the 5th node; The negative electrode of described the 8th diode is connected in the 4th node, and the anode of described the 8th diode is connected in the 6th node.
Above-mentioned first switching tube, second switch pipe, the 7th switching tube, the 8th switching tube of the present invention is IGBT pipe (insulated gate bipolar transistor).
The 4th switching tube that the present invention is above-mentioned, the 6th switching tube adopts the switching tube of identical type; The 3rd above-mentioned switching tube, the 5th switching tube adopts the switching tube of identical type; The kind of the kind of the 4th switching tube, the 6th switching tube and the 3rd switching tube, the 5th switching tube can be identical or different.
The the 3rd～the 6th switching tube of the present invention specifically can adopt the pipe as MOSFET, and PowerMosfet manages (power field effect pipe), Coolmosfet pipe, any one in the switching tubes such as IGBT pipe.
Preferably, described first switching tube, second switch pipe, the 3rd switching tube the 5th switching tube, the 7th switching tube and the 8th switching tube are IGBT pipe (insulated gate bipolar transistor), wherein: the emitter of described first switching tube is connected in the 3rd node, and collector electrode is connected in first electric capacity; The collector electrode of described second switch pipe is connected in the 3rd node, and emitter is connected in second electric capacity; The emitter of described the 3rd switching tube is connected in first node, and collector electrode is connected in the 4th switching tube; The emitter of described the 5th switching tube is connected in the 6th switching tube, and collector electrode is connected in first node; The emitter of described the 7th switching tube is connected in the 4th node, and collector electrode is connected in the 5th node; The collector electrode of described the 8th switching tube is connected in the 4th node, and emitter is connected in the 6th node.The equal connection control signal of the base stage of these six IGBT pipes.
Preferably, described the 4th switching tube and the 6th switching tube all adopt the Coolmosfet pipe, and wherein: the drain electrode of described the 4th switching tube is connected in the collector electrode of the 3rd switching tube, and the source electrode of described the 4th switching tube is connected in Section Point; The drain electrode of described the 6th switching tube is connected in Section Point, and the source electrode of described the 6th switching tube is connected in the emitter of the 5th switching tube.The equal connection control signal of the grid of these two Coolmosfet pipes.
Compared with prior art, the present invention has following beneficial effect:
Five-electrical level inverter of the present invention has all advantages of traditional five level, but different with traditional five-electrical level inverter circuit, and it is at output Vdc, Vdc/2 ,-Vdc/2 is during-Vdc, tube current is not positive and negative, and electric current all only through two power devices, has lower conduction loss.Though also need by three power devices at 0 o'clock electric current of output, new topology reduces conduction loss by constructing two shunt circuits; Mixed structure by IGBT and Coolmosfet adapts to the system that wind-powered electricity generation, photovoltaic etc. have power fluctuation simultaneously.All can reach the purpose of optimization system efficient in the occasion of watt level.Generally speaking, it can obviously improve the loss of five level circuits commonly used, improves efficient, the especially grid-connected power generation system such as wind power generation, photovoltaic generation of inverter.
Description of drawings
By reading the detailed description of non-limiting example being done with reference to the following drawings, it is more obvious that other features, objects and advantages of the present invention will become:
Fig. 1 is traditional five-electrical level inverter circuit diagram;
Fig. 2-Fig. 4 is the current path figure of traditional five-electrical level inverter;
Fig. 5 is one embodiment of the invention five-electrical level inverter circuit diagram;
Fig. 6-Fig. 8 is the positive half cycle equivalent circuit diagram of one embodiment of the invention five-electrical level inverter;
Fig. 9-Figure 11 is the negative half period equivalent circuit diagram of one embodiment of the invention five-electrical level inverter.
Embodiment
The present invention is described in detail below in conjunction with specific embodiment.Following examples will help those skilled in the art further to understand the present invention, but not limit the present invention in any form.Should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, can also make some distortion and improvement.These all belong to protection scope of the present invention.
As shown in Figure 5, the embodiment of the invention provides a kind of five-electrical level inverter, comprise: first capacitor C 1, second capacitor C 2, first switch transistor T 1, second switch pipe T2, the 3rd switch transistor T 3, the 4th switch transistor T 4, the 5th switch transistor T 5, the 6th switch transistor T 6,, the 7th switching tube T7, the 8th switching tube T8, the first diode D1, the second diode D2, the 3rd diode D3, the 4th diode D4, the 5th diode D5, the 6th diode D6, the 7th diode D7, the 8th diode D8, inductance L and electrical network Grid(or other load), wherein:
Described first capacitor C 1 and 2 series connection of described second capacitor C, described first capacitor C 1 and described second capacitor C, 2 tie points are electric capacity mid point O;
Described first switch transistor T 1, described second switch pipe T2 are connected between described first capacitor C 1 and described second capacitor C 2 successively; Described first switch transistor T 1 and described first capacitor C 1 are connected in the 5th node O5, and described second switch pipe T2 and described second capacitor C 2 are connected in the 6th node O6; Described first switch transistor T 1 and described second switch pipe T2 are connected in the 3rd node O3;
Described the 7th switching tube T7 and described the 8th switching tube T8 are connected in series, and described the 7th switching tube T7 is connected in described the 5th node O5, and described the 8th switching tube T8 is connected in described the 6th node O6; Described the 7th switching tube T7 and described the 8th switching tube T8 are connected in the 4th node O4;
Described the 3rd switch transistor T 3 and 4 series connection of described the 4th switch transistor T, described the 5th switch transistor T 5 and 6 series connection of described the 6th switch transistor T, these two series arms are in parallel again, this parallel branch is connected between the 3rd node O3 and the electric capacity mid point O, wherein said the 3rd switch transistor T 3 and described the 5th switch transistor T 5 are connected in first node O1, and described the 4th switch transistor T 4 and described the 6th switch transistor T 6 are connected in Section Point O2; Described first node O1 is connected to electric capacity mid point O, and described Section Point O2 is connected to described the 3rd node O3; Described the 3rd node O3 other end connects an end of described inductance L;
Be connected described the 4th node O4 after the other end of described inductance L and the described electrical network Grid series connection;
The described first diode D1, the second diode D2, the 3rd diode D3, the 4th diode D4, the 5th diode D5, the 6th diode D6, the 7th diode D7 and the 8th diode D8 correspond respectively to described first switch transistor T 1, second switch pipe T2, the 3rd switch transistor T 3, the 4th switch transistor T 4, the 5th switch transistor T 5, the 6th switch transistor T 6, the 7th switching tube T7 and the 8th switching tube T8, and the corresponding two ends that are connected in parallel on each switching tube;
The anode of the described first diode D1 is connected in the 3rd node O3, and the negative electrode of the described first diode D1 is connected in first capacitor C 1; The negative electrode of the described second diode D2 is connected in the 3rd node O3, and the anode of the described second diode D2 is connected in second capacitor C 2; The anode of described the 3rd diode D3 is connected in described first node O1, and the negative electrode of described the 3rd diode D3 is connected in the negative electrode of described the 4th switch transistor T 4 and described the 4th diode D4, and the anode of described the 4th diode D4 is connected to Section Point O2; The anode of described the 5th diode D5 is connected in described the 6th switch transistor T 6 and the 6th diode D6 anode, and the negative electrode of described the 5th diode D5 is connected in described first node O1, and the negative electrode of described the 6th diode D6 is connected in described Section Point O2; The anode of described the 7th diode D7 is connected in the 4th node O4, and the negative electrode of described the 7th diode D7 is connected in the 5th node O5; The negative electrode of described the 8th diode D8 is connected in the 4th node O4, and the anode of described the 8th diode D8 is connected in the 6th node O6.
Described first switch transistor T 1, second switch pipe T2, the 3rd switch transistor T 3, the 5th switch transistor T 5, the 7th switching tube T7 and the 8th switching tube T8 are IGBT pipe (insulated gate bipolar transistor), wherein: the emitter of described first switch transistor T 1 is connected in the 3rd node O3, and collector electrode is connected in first capacitor C 1; The collector electrode of described second switch pipe T2 is connected in the 3rd node O3, and emitter is connected in second capacitor C 2; The emitter of described the 3rd switch transistor T 3 is connected in first node O1, and collector electrode is connected in the 4th switch transistor T 4; The emitter of described the 5th switch transistor T 5 is connected in the 6th switch transistor T 6, and collector electrode is connected in first node O1; The emitter of described the 7th switching tube T7 is connected in the 4th node O4, and collector electrode is connected in the 5th node O5; The collector electrode of described the 8th switching tube T8 is connected in the 4th node O4, and emitter is connected in the 6th node O6.The equal connection control signal of the base stage of these six IGBT pipes.
Described the 4th switch transistor T 4 and the 6th switch transistor T 6 all adopt the Coolmosfet pipe, and wherein: the drain electrode of described the 4th switch transistor T 4 is connected in the collector electrode of the 3rd switch transistor T 3, and the source electrode of described the 4th switch transistor T 4 is connected in Section Point O2; The drain electrode of described the 6th switch transistor T 6 is connected in Section Point O2, and the source electrode of described the 6th switch transistor T 6 is connected in the emitter of the 5th switch transistor T 5.The equal connection control signal of the grid of these two Coolmosfet pipes.
Shown in Fig. 6-8, when positive half cycle, circuit can export 0, Vdc/2 and Vdc, when opening the first and the 8th switching tube T1, and T8 and when closing other switching tube, circuit output Vdc.At this moment, if the sense of current for just, then shown in the solid arrow among Fig. 6, electric current flows to load through first switch transistor T 1, the 8th switching tube T8.When the sense of current is that electric current is then got back to positive bus-bar through the 8th diode D8 and the first diode D1 when bearing shown in another arrow.
When opening switch transistor T 3, T4, T5, T6, T8 and when closing other switching tube, circuit output Vdc/2.At this moment, if the sense of current is for just, then shown in the solid arrow among Fig. 7, electric current flows to load through the 3rd diode D3 and the 4th switch transistor T 4, the 8th switching tube, and simultaneously electric current is through the 5th switch transistor T 5 and the 6th diode D6 shunt circuit, flow to load-side through the 8th switching tube T8.When the sense of current is that electric current is then got back to electric capacity mid point O through the 8th diode, the 4th diode D4 and the 3rd switch transistor T 3 and the 8th diode, the 6th switch transistor T 6 and the 5th diode D5 shunt circuit when bearing shown in another arrow.
And when opening second switch pipe T2, the 8th switching tube T8, circuit output 0.Electric current is timing, and flow through D2, load, T8 of electric current constitutes the loop; When electric current was negative, electric current constituted the loop through D8, load, T2.As shown in Figure 8.
Shown in Fig. 9-11, in like manner can analyze the negative half period situation, when negative half period, circuit can export 0 ,-Vdc/2 and-Vdc, when opening the second and the 7th switching tube T2, T7 and when closing other switching tube, circuit output-Vdc.At this moment, if the sense of current for just, then shown in the solid arrow among Fig. 9, electric current is then got back to positive bus-bar through the 7th diode D7 and the second diode D2.If the sense of current is for negative, electric current arrives negative busbar through the 7th switching tube T7, load, second switch pipe T2.
When closing other switching tube when opening the 3rd switch transistor T 3, the four switch transistor T, 4, the five switch transistor T 5, the six switch transistor T, 6, the eight switching tube T8, circuit output Vdc/2.At this moment, if the sense of current for just, then shown in the solid arrow among Figure 10, electric current constitutes the loop through the 3rd diode D3 and the 4th switch transistor T 4, load and the 8th switching tube T8.Electric current constitutes the shunt circuit through the 5th switch transistor T 5 and the 6th diode D6, load and the 8th switching tube T8 simultaneously.When the sense of current for negative shown in another arrow the time, electric current is then got back to electric capacity mid point O through the 8th diode D8, the 4th diode D4 and the 3rd switch transistor T 3 and the 8th diode D8, the 6th switch transistor T 6 and the 5th diode D5 shunt circuit.
And when opening first switch transistor T 1, the 7th switching tube T7, circuit output 0.Electric current is timing, and flow through first switch transistor T 1, load, the 7th diode D7 of electric current constitutes the loop; When electric current was negative, electric current constituted the loop through the 7th switching tube T7, load, the first diode D1, as shown in figure 11.
Should be understood that each switching tube in the foregoing description structure has multiple choices, be listed below 3 kinds: intermediate switch pipe T3, T4, T5, T6 all adopt CoolMosfet, or all adopt IGBT, or all adopt the MOSFET form.Same switch transistor T 1, T2, T7, T8 also can adopt forms such as MOSFET or Coolmosfet, enumerate no longer one by one herein, and it realizes that principle is identical with above preferred embodiment or similar.
More than specific embodiments of the invention are described.It will be appreciated that the present invention is not limited to above-mentioned specific implementations, those skilled in the art can make various distortion or modification within the scope of the claims, and this does not influence flesh and blood of the present invention.
Claims (7)
1. five-electrical level inverter, it is characterized in that comprising: first electric capacity, second electric capacity, first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube, the 7th switching tube, the 8th switching tube, first diode, second diode, the 3rd diode, the 4th diode, the 5th diode, the 6th diode, the 7th diode, the 8th diode and inductance, wherein:
Described first electric capacity and described second capacitances in series, and both tie points are the electric capacity mid point;
Described first switching tube, described second switch pipe are connected between described first electric capacity and described second electric capacity successively; Described first switching tube and described first electric capacity are connected in the 5th node, and described second switch pipe and described second electric capacity are connected in the 6th node; Described first switching tube and described second switch pipe are connected in the 3rd node;
Described the 7th switching tube and described the 8th switching tube are connected in series; Described the 7th switching tube is connected in described the 5th node, and described the 8th switching tube is connected in described the 6th node; Described the 7th switching tube and described the 8th switching tube are connected in the 4th node;
Described the 3rd switching tube and the series connection of described the 4th switching tube, described the 5th switching tube and the series connection of described the 6th switching tube, these two series arms are in parallel again, this parallel branch is connected between the 3rd node and the electric capacity mid point, wherein said the 3rd switching tube and described the 5th switching tube are connected in first node, and described the 4th switching tube and described the 6th switching tube are connected in Section Point; Described first node is connected to the electric capacity mid point, and described Section Point is connected to described the 3rd node; Described the 3rd node other end connects an end of inductance;
Be connected described the 4th node after the described inductance other end and the load series connection;
Described first diode, second diode, the 3rd diode, the 4th diode, the 5th diode, the 6th diode, the 7th diode and the 8th diode correspond respectively to described first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube, the 7th switching tube and the 8th switching tube, and the corresponding two ends that are connected in parallel on each switching tube.
2. five-electrical level inverter according to claim 1 is characterized in that: the anode of described first diode is connected in the 3rd node, and the negative electrode of described first diode is connected in first electric capacity; The negative electrode of described second diode is connected in the 3rd node, and the anode of described second diode is connected in second electric capacity; The anode of described the 3rd diode is connected in described first node, and the negative electrode of described the 3rd diode is connected in the negative electrode of described the 4th switching tube and described the 4th diode, and the anode of described the 4th diode is connected to Section Point; The anode of described the 5th diode is connected in described the 6th switching tube and the 6th diode anode, and the negative electrode of described the 5th diode is connected in described first node, and the negative electrode of described the 6th diode is connected in described Section Point; The anode of described the 7th diode is connected in the 4th node, and the negative electrode of described the 7th diode is connected in the 5th node; The negative electrode of described the 8th diode is connected in the 4th node, and the anode of described the 8th diode is connected in the 6th node.
3. five-electrical level inverter according to claim 1 is characterized in that, described first switching tube, second switch pipe, the 7th switching tube, the 8th switching tube are the IGBT pipe.
4. according to each described five-electrical level inverter of claim 1-3, it is characterized in that described the 4th switching tube, the 6th switching tube adopt the switching tube of identical type; Described the 3rd switching tube, the 5th switching tube adopt the switching tube of identical type; The kind of the 4th switching tube, the 6th switching tube is identical or different with the kind of the 3rd switching tube, the 5th switching tube.
5. five-electrical level inverter according to claim 4 is characterized in that, described the 3rd～the 6th switching tube adopts the MOSFET pipe, PowerMosfet pipe, Coolmosfet pipe, any one in the IGBT pipe.
6. five-electrical level inverter according to claim 5, it is characterized in that, described first switching tube, second switch pipe, the 3rd switching tube, the 5th switching tube, the 7th switching tube and the 8th switching tube are the IGBT pipe, wherein: the emitter of described first switching tube is connected in the 3rd node, and collector electrode is connected in first electric capacity; The collector electrode of described second switch pipe is connected in the 3rd node, and emitter is connected in second electric capacity; The emitter of described the 3rd switching tube is connected in first node, and collector electrode is connected in the 4th switching tube; The emitter of described the 5th switching tube is connected in the 6th switching tube, and collector electrode is connected in first node; The emitter of described the 7th switching tube is connected in the 4th node, and collector electrode is connected in the 5th node; The collector electrode of described the 8th switching tube is connected in the 4th node, and emitter is connected in the 6th node, the equal connection control signal of the base stage of these six IGBT pipes.
7. five-electrical level inverter according to claim 5, it is characterized in that, described the 4th switching tube and the 6th switching tube all adopt the Coolmosfet pipe, and wherein: the drain electrode of described the 4th switching tube is connected in the collector electrode of the 3rd switching tube, and the source electrode of described the 4th switching tube is connected in Section Point; The drain electrode of described the 6th switching tube is connected in Section Point, and the source electrode of described the 6th switching tube is connected in the emitter of the 5th switching tube; The equal connection control signal of the grid of these two Coolmosfet pipes.
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| CN201310090983.8A CN103219907B (en) | 2013-03-20 | 2013-03-20 | Five-level inverter |
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| CN201310090983.8A CN103219907B (en) | 2013-03-20 | 2013-03-20 | Five-level inverter |
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| CN111082680A (en) * | 2019-12-13 | 2020-04-28 | 三峡大学 | Single-phase five-level rectifier based on T-shaped structure |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103684019A (en) * | 2013-12-16 | 2014-03-26 | 上海交通大学无锡研究院 | Five-level inverter and control method thereof |
| CN103731057A (en) * | 2013-12-26 | 2014-04-16 | 安徽巨日华电新能源有限公司 | T-shaped three-level inverter |
| CN108092536A (en) * | 2017-12-27 | 2018-05-29 | 南京工程学院 | A kind of five flat current transformer of device mixed type active clamper |
| CN110880864A (en) * | 2019-12-13 | 2020-03-13 | 三峡大学 | Single-phase five-level power factor correction circuit based on hybrid H bridge |
| CN111030441A (en) * | 2019-12-13 | 2020-04-17 | 三峡大学 | Single-phase power factor correction circuit based on three-tube five-level topology |
| CN111030440A (en) * | 2019-12-13 | 2020-04-17 | 三峡大学 | Single-phase two-tube five-level rectifier based on hybrid H bridge |
| CN111082680A (en) * | 2019-12-13 | 2020-04-28 | 三峡大学 | Single-phase five-level rectifier based on T-shaped structure |
| CN111082680B (en) * | 2019-12-13 | 2021-05-04 | 三峡大学 | Single-phase five-level rectifier based on T-shaped structure |
| CN111030441B (en) * | 2019-12-13 | 2021-06-04 | 三峡大学 | Single-phase power factor correction circuit based on three-tube five-level topology |
| CN110880864B (en) * | 2019-12-13 | 2021-07-06 | 三峡大学 | Single-phase five-level power factor correction circuit based on hybrid H bridge |
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