CN102510232A

CN102510232A - Five-level voltage source inverter

Info

Publication number: CN102510232A
Application number: CN2011104322547A
Authority: CN
Inventors: 谭国俊; 刘战; 何凤有
Original assignee: China Mining Drives and Automation Co Ltd
Current assignee: China Mining Drives and Automation Co Ltd
Priority date: 2011-12-21
Filing date: 2011-12-21
Publication date: 2012-06-20

Abstract

The invention discloses a five-level voltage source inverter, belonging to the field of power electronic inverters. The five-level voltage source inverter comprises a DC (direct current) power source E, three electrolytic capacitors (C1, C2 and Cph) and eight insulated gate bipolar transistors (IGBT1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7 and IGBT8). The five-level voltage source inverter has the beneficial effects that the quantity of the used electrolytic capacitors is few, clamping diodes are not required, and each phase is only provided with one electrolytic capacitor; and a circuit structure is simple and flexible in control.

Description

A kind of five-power level voltage source inverter

Technical field

The present invention relates to a kind of electronic power inverter product, relate in particular to a kind of five-power level voltage source inverter, belong to the electronic power inverter field.

Background technology

In recent years, along with the development in an all-round way of power electronic technology and control technology, power electronic equipment is widely used, and people are more and more stronger to the requirement of high-power, high pressure resistant, the low harmonic disturbance of power electronic equipment.Advantage such as the multi-level inverse conversion device has that power is big, switching frequency is low, output harmonic wave is little, rapid dynamic response speed, Electro Magnetic Compatibility are good; And can make the low power electronic device of withstand voltage reliably be applied to the high-power field, and reduce the high order harmonic component that pulse-width modulation (being called for short PWM) control produces effectively.But; Because the number of diodes of known diode clamp type five level inverters is many, electric capacity flies that the control of the type of striding five level inverters is complicated, H bridge cascade connection type five level inverters needs independently DC source all have inherent defect, suppressed popularization and the use of five level inverters in reality.

Summary of the invention

To the problem that above-mentioned prior art exists, the present invention provides a kind of five-power level voltage source inverter, and it is few to have used electrochemical capacitor quantity, does not have clamp diode, and each only has an electrochemical capacitor mutually, and circuit structure is simple, controls effect flexibly.

To achieve these goals; The technical scheme that the present invention adopts is: a kind of five-power level voltage source inverter; Comprise DC power supply E; Three electrochemical capacitor C1, C2, Cph; Eight insulated gate bipolar transistor IGBTs 1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8; The positive terminal of the positive terminal of DC power supply E, electrochemical capacitor C1 connects the collector electrode of insulated gate bipolar transistor IGBT 1; The negative pole end of the negative pole end of DC power supply E, electrochemical capacitor C2 connects the emitter of insulated gate bipolar transistor IGBT 4; The emitter of the positive terminal of the negative pole end of electrochemical capacitor C1, electrochemical capacitor C2, insulated gate bipolar transistor IGBT 2 links to each other with the collector electrode of insulated gate bipolar transistor IGBT 3; The collector electrode of the emitter of insulated gate bipolar transistor IGBT 1, insulated gate bipolar transistor IGBT 2 connects the collector electrode of insulated gate bipolar transistor IGBT 5, and the emitter of the emitter of insulated gate bipolar transistor IGBT 3, insulated gate bipolar transistor IGBT 6 connects the collector electrode of insulated gate bipolar transistor IGBT 4, and the collector electrode of the emitter of insulated gate bipolar transistor IGBT 5, insulated gate bipolar transistor IGBT 7 connects the positive terminal of electrochemical capacitor Cph; The emitter of the collector electrode of insulated gate bipolar transistor IGBT 6, insulated gate bipolar transistor IGBT 8 connects the negative pole end of electrochemical capacitor Cph, and the collector electrode of the emitter of insulated gate bipolar transistor IGBT 7, insulated gate bipolar transistor IGBT 8 connects the output of A phase.

Said each igbt also can be by two or more igbt series connection.

Said each electrochemical capacitor also can be by a plurality of electrochemical capacitor serial or parallel connections, and perhaps series and parallel mixes again.

Said each igbt also can be used by other full-control type device replacements, and other full-control type devices comprise integrated gate commutated thyristor, gate level turn-off thyristor, power transistor, field of electric force effect transistor.

The invention has the beneficial effects as follows: used electrochemical capacitor quantity is few, does not have clamp diode, and each mutually only has an electrochemical capacitor, and circuit structure is simple, and control flexibly.

Description of drawings

Fig. 1 is an A phase topology diagram of the present invention;

Fig. 2 is a three-phase topology diagram of the present invention.

Embodiment

To combine accompanying drawing that the present invention is described further below.

As depicted in figs. 1 and 2; The present invention includes DC power supply E; Three electrochemical capacitor C1, C2, Cph; Eight insulated gate bipolar transistor IGBTs 1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8; The positive terminal of the positive terminal of DC power supply E, electrochemical capacitor C1 connects the collector electrode of insulated gate bipolar transistor IGBT 1; The negative pole end of the negative pole end of DC power supply E, electrochemical capacitor C2 connects the emitter of insulated gate bipolar transistor IGBT 4; The emitter of the positive terminal of the negative pole end of electrochemical capacitor C1, electrochemical capacitor C2, insulated gate bipolar transistor IGBT 2 links to each other with the collector electrode of insulated gate bipolar transistor IGBT 3; The collector electrode of the emitter of insulated gate bipolar transistor IGBT 1, insulated gate bipolar transistor IGBT 2 connects the collector electrode of insulated gate bipolar transistor IGBT 5; The emitter of the emitter of insulated gate bipolar transistor IGBT 3, insulated gate bipolar transistor IGBT 6 connects the collector electrode of insulated gate bipolar transistor IGBT 4; The collector electrode of the emitter of insulated gate bipolar transistor IGBT 5, insulated gate bipolar transistor IGBT 7 connects the positive terminal of electrochemical capacitor Cph, and the emitter of the collector electrode of insulated gate bipolar transistor IGBT 6, insulated gate bipolar transistor IGBT 8 connects the negative pole end of electrochemical capacitor Cph, and the collector electrode of the emitter of insulated gate bipolar transistor IGBT 7, insulated gate bipolar transistor IGBT 8 connects the output of A phase; Each igbt also can be by two or more igbt series connection; Each electrochemical capacitor also can be by a plurality of electrochemical capacitor serial or parallel connections, and perhaps series and parallel mixes again; Each igbt also can be used by other full-control type device replacements, and other full-control type devices comprise integrated gate commutated thyristor, gate level turn-off thyristor, power transistor, field of electric force effect transistor.

The present invention can be easy to realize the output of five level voltages through conducting and the shutoff of control different insulative grid bipolar transistor IGBT 1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8; And used electrochemical capacitor quantity is few; There is not clamp diode; And each only has an electrochemical capacitor mutually, and circuit structure is simple, and control flexibly.

Claims

1. five-power level voltage source inverter; It is characterized in that; Comprise DC power supply E; Three electrochemical capacitor C1, C2, Cph; Eight insulated gate bipolar transistor IGBTs 1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8; The positive terminal of the positive terminal of DC power supply E, electrochemical capacitor C1 connects the collector electrode of insulated gate bipolar transistor IGBT 1; The negative pole end of the negative pole end of DC power supply E, electrochemical capacitor C2 connects the emitter of insulated gate bipolar transistor IGBT 4; The emitter of the positive terminal of the negative pole end of electrochemical capacitor C1, electrochemical capacitor C2, insulated gate bipolar transistor IGBT 2 links to each other with the collector electrode of insulated gate bipolar transistor IGBT 3; The collector electrode of the emitter of insulated gate bipolar transistor IGBT 1, insulated gate bipolar transistor IGBT 2 connects the collector electrode of insulated gate bipolar transistor IGBT 5, and the emitter of the emitter of insulated gate bipolar transistor IGBT 3, insulated gate bipolar transistor IGBT 6 connects the collector electrode of insulated gate bipolar transistor IGBT 4, and the collector electrode of the emitter of insulated gate bipolar transistor IGBT 5, insulated gate bipolar transistor IGBT 7 connects the positive terminal of electrochemical capacitor Cph; The emitter of the collector electrode of insulated gate bipolar transistor IGBT 6, insulated gate bipolar transistor IGBT 8 connects the negative pole end of electrochemical capacitor Cph, and the collector electrode of the emitter of insulated gate bipolar transistor IGBT 7, insulated gate bipolar transistor IGBT 8 connects the output of A phase.

2. a kind of five-power level voltage source inverter according to claim 1 is characterized in that, said each igbt also can be by two or more igbt series connection.

3. a kind of five-power level voltage source inverter according to claim 1 is characterized in that, said each electrochemical capacitor also can be by a plurality of electrochemical capacitor serial or parallel connections, and perhaps series and parallel mixes again.

4. a kind of five-power level voltage source inverter according to claim 1; It is characterized in that; Said each igbt also can be used by other full-control type device replacements, and other full-control type devices comprise integrated gate commutated thyristor, gate level turn-off thyristor, power transistor, field of electric force effect transistor.