CN110416310A - A kind of film transistor device and preparation method improving radiation resistance with hydrogen peroxide - Google Patents
A kind of film transistor device and preparation method improving radiation resistance with hydrogen peroxide Download PDFInfo
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- CN110416310A CN110416310A CN201910559526.6A CN201910559526A CN110416310A CN 110416310 A CN110416310 A CN 110416310A CN 201910559526 A CN201910559526 A CN 201910559526A CN 110416310 A CN110416310 A CN 110416310A
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- hydrogen peroxide
- precursor solution
- film transistor
- highly doped
- silicon substrate
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- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 230000005855 radiation Effects 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000002243 precursor Substances 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 238000004528 spin coating Methods 0.000 claims abstract description 10
- 239000000243 solution Substances 0.000 claims description 27
- 239000003814 drug Substances 0.000 claims description 19
- 229940079593 drug Drugs 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910001960 metal nitrate Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- 206010068150 Acoustic shock Diseases 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 238000005510 radiation hardening Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of film transistor devices and preparation method that radiation resistance is improved with hydrogen peroxide, including the gate electrode set gradually from top to bottom, highly doped silicon substrate, and dielectric layer, semiconductor layer, upper metal electrode；The upper metal electrode includes source electrode and drain electrode；Preparation method specific steps include: that precursor solution a) is prepared；B) hydrogen peroxide precursor solution is prepared；C) by hydrogen peroxide precursor solution ultrasonic vibration 15-60 minutes；D) highly doped silicon substrate is cleaned；E) it will be spin-coated on cleaned highly doped silicon substrate with the hydrogen peroxide precursor solution got ready；F) the highly doped silicon substrate of the good hydrogen peroxide precursor solution of spin coating is placed in annealing on hot plate and forms dielectric layer；G) semiconductor layer is prepared；H) upper metal electrode and gate electrode are deposited.This case improves the radiation resistance of film transistor device；Film transistor device it is stable and reliable for performance；It is compatible with traditional handicraft in technique, it can be effectively controlled preparation cost.
Description
Technical field
It is specifically a kind of to improve high dielectric constant material with hydrogen peroxide the present invention relates to a kind of technology of field of microelectronic devices
Expect (high-kMaterial) film transistor device (TFT device) radiation resistance method.
Background technique
With the fast development of space technology, space flight strategic arms and microelectric technique, more and more electronic components
It is used by space product.It is radiation-sensitive that wherein semiconductor devices (including: semi-conductor discrete device, integrated circuit etc.) is most of
Inductor component, radiation environment can generate different degrees of influence to the performance of these devices, or even make its failure.
Space radiation environment is mainly from cosmic ray, solar flare radiation and earth-circling inside and outside Van Allen radiation
Band etc..Although radiation dose rate is very low, since it is that a cumulative effect will lead to when dosage rate is accumulated to certain value
The performance of electronic device changes, and will lead to complete device failure when serious, makes electronic equipment cisco unity malfunction.
With the raising of device integration and the reduction of operating voltage, device is also big to the susceptibility of single particle effect
Amplitude improves, and traditional semiconductor devices based on silica has lower radiation resistance, is not enough to for a long time in spoke
It penetrates in environment and reliablely and stablely works.And some high-kSubstitute of the material as silica, radiation resistance are also required to
It improves.Therefore it needs for various radiation effects, in the material of device, circuit design, structure design, technique manufacture and encapsulation etc.
Links take reinforcement measure, make it have certain radiation resistance.The device of radiation hardening is applied to be radiated in space
In environment, the reliability and service life of spacecraft will be improved;It applies in strategic arms, its efficiency will be improved and dashes forward anti-
Ability.
Summary of the invention
Object of the present invention is to: one kind being based on high dielectric constant material (high- for existingkMaterial) semiconductor devices deposit
Above-mentioned deficiency, propose a kind of high dielectric constant material (high- that radiation resistance is goodkMaterial) film transistor device
(TFT device) meets semiconductor devices and needs for a long time under radiation environment the needs of reliable and stable work, while in technique
It is compatible with traditional handicraft, control preparation cost.
The technical scheme is that a kind of film transistor device that radiation resistance is improved with hydrogen peroxide, including under
To the gate electrode above set gradually, highly doped silicon substrate, dielectric layer, semiconductor layer, upper metal electrode；The upper metal electrode includes
Source electrode and drain electrode.
Preferably, the highly doped silicon substrate is the highly doped monocrystalline substrate of p-type<100>crystal orientation.
Preferably, the semiconductor layer material is selected from one of metal oxide.
Preferably, the gate electrode is one of titanium, aluminium, nickel, gold, silver or several laminations.
Preferably, the upper metal electrode is one of titanium, aluminium, nickel, gold, silver or several laminations.
A method of improving the film transistor device of radiation resistance with hydrogen peroxide, specific steps include:
A) presoma drug is dissolved in aqueous solution, obtaining concentration is 0.5-2.5mol/L precursor solution；
B) hydrogen peroxide is added in precursor solution, obtains hydrogen peroxide precursor solution；Hydrogen peroxide concentration is 1-10 mol/L；
C) by hydrogen peroxide precursor solution ultrasonic vibration 15-60 minutes；
D) highly doped silicon substrate is cleaned, highly doped silicon substrate is completely immersed in and is held in the aqueous solution containing 2%-5% hydrofluoric acid, is impregnated
After 30-120 seconds, highly doped silicon substrate is rinsed with deionized water and removes remaining impurity and with being dried with nitrogen；
E) it will be spin-coated on cleaned highly doped silicon substrate with the hydrogen peroxide precursor solution got ready, spin speed 3000-
5500 revolutions per seconds, spin-coating time 20-60s；
F) the highly doped silicon substrate of the good hydrogen peroxide precursor solution of spin coating is placed in annealing on hot plate and forms dielectric layer, annealing temperature is
150-300oC, annealing time are 40-80 minutes；
G) semiconductor layer is prepared；
H) upper metal electrode and gate electrode are deposited.
Preferably, the presoma drug is high dielectric constant metal nitrate, in high dielectric constant metal chloride
One or more of doping mutually, the presoma drug are one or more of nitrate or villaumite of high dielectric constant metal
Doping mutually, the ratio of the total drug concentration of doping metals drug concentration Zhan are 0-50%.
Preferably, the preparation step of the semiconductor layer includes: and semiconductor precursor drug is dissolved in aqueous solution first,
It is 0.5-2.5mol/L semiconductor precursor solution that concentration, which is made,；Semiconductor precursor drug be one of metal nitrate or
Two or more mutual doping, the ratio of the total drug concentration of doping metals drug concentration Zhan are 0-50%；It is again that semiconductor precursor is molten
Liquid ultrasonic vibration 15-60 minutes；Semiconductor precursor solution is spin-coated on the dielectric layer prepared afterwards, spin speed is
3000-5500 revolutions per seconds, spin-coating time 20-60s.
The invention has the advantages that
1, the radiation resistance of film transistor device is improved；
2, film transistor device is stable and reliable for performance；
3, compatible with traditional handicraft in technique, it can be effectively controlled preparation cost.
Detailed description of the invention
The invention will be further described with reference to the accompanying drawings and embodiments:
A kind of structural schematic diagram for the film transistor device improving radiation resistance with hydrogen peroxide described in Fig. 1 this case；
It is a kind of described in Fig. 2 this case to improve aluminium oxide thin tilm capacitor in the film transistor device of radiation resistance with hydrogen peroxide
Drift diagram of the flat-band voltage under back bias voltage radiation；
Wherein: 100, source electrode；101, drain electrode；200, semiconductor layer；300, dielectric layer；400, highly doped silicon substrate；500, grid
Electrode.
Specific embodiment
Embodiment:
As shown in Fig. 1, a kind of film transistor device improving radiation resistance with hydrogen peroxide, including set gradually from top to bottom
Gate electrode 500, highly doped silicon substrate 400, dielectric layer 300, semiconductor layer 200, upper metal electrode；The upper metal electrode includes
Source electrode 100 and drain electrode 101；The highly doped silicon substrate is the highly doped monocrystalline substrate of p-type<100>crystal orientation；It is described partly to lead
Body layer material is selected from one of metal oxide；The gate electrode is one of titanium, aluminium, nickel, gold, silver or several folded
Layer；The upper metal electrode is one of titanium, aluminium, nickel, gold, silver or several laminations.
A method of improving the film transistor device of radiation resistance with hydrogen peroxide, specific steps include:
A) presoma drug is dissolved in aqueous solution, obtains the precursor solution that concentration is 2.5mol/L, presoma drug is nitre
Sour aluminium and hafnium chloride doping, the two ratio are 8:2；
B) hydrogen peroxide is added in precursor solution, obtains hydrogen peroxide precursor solution；Hydrogen peroxide concentration is 7.5mol/L；
C) by hydrogen peroxide precursor solution ultrasonic vibration 15 minutes；
D) highly doped silicon substrate is cleaned, the highly doped silicon substrate is the highly doped monocrystalline substrate of p-type<100>crystal orientation, by highly doped silicon
Substrate, which is completely immersed in, to be held in the aqueous solution containing 2%-5% hydrofluoric acid, after impregnating 30-120 seconds, rinses highly doped silicon with deionized water
Substrate removes remaining impurity and with being dried with nitrogen；
E) it will be spin-coated on cleaned highly doped silicon substrate with the hydrogen peroxide precursor solution got ready, spin speed is 4500 turns/
Second, spin-coating time 40s；
F) the highly doped silicon substrate of the good hydrogen peroxide precursor solution of spin coating is placed in annealing on hot plate and forms dielectric layer, annealing temperature is
300oC, annealing time are 60 minutes；
G) semiconductor layer is prepared, the semiconductor layer material is indium oxide；The preparation step of the semiconductor layer includes: first will
Indium nitrate is dissolved in aqueous solution, the semiconductor precursor solution that concentration is 0.5mol/L is made, then by semiconductor precursor solution
Ultrasonic vibration 15 minutes；Then semiconductor precursor solution is spin-coated on the dielectric layer prepared, spin speed be 3000 turns/
Second, spin-coating time 20s；
H) deposit upper metal electrode and gate electrode, the gate electrode and upper metal electrode be one of titanium, aluminium, nickel, gold, silver or
Several lamination of person；This implementation preference deposited the metal with a thickness of 300nm by mask plate using electron beam evaporation
Aluminium, as aluminum metal source electrode 100, aluminum metal drain electrode 101 and aluminum gate electrode 500.
The strong oxidizing property of hydrogen peroxide can accelerate the decomposition of impurity in precursor solution at low temperature and form metal framework
Structure, while reducing the content of Lacking oxygen in film improves the quality of film, improve metal-oxide film and silicon substrate it
Between interface, to improve the radiation resistance of device.It is radiated from the flat-band voltage of Fig. 2 aluminium oxide thin tilm capacitor in back bias voltage
Under drift diagram as can be seen that circular data represent the MOS device containing hydrogen peroxide, flatband voltage shift after irradiation without
Significant change, radiation resistance are significantly improved, and triangle data represents the MOS device without hydrogen peroxide, after irradiation
Flatband voltage shift produces apparent degeneration.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any
Those skilled in the art all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.
Therefore, such as those of ordinary skill in the art without departing from revealed spirit of the invention under technical idea
All equivalent modifications completed or change should be covered by the claims of the present invention.
Claims (8)
1. a kind of film transistor device for improving radiation resistance with hydrogen peroxide, it is characterised in that: including successively setting from top to bottom
The gate electrode set, highly doped silicon substrate, dielectric layer, semiconductor layer, upper metal electrode；The upper metal electrode includes source electrode and leakage
Electrode.
2. a kind of film transistor device for improving radiation resistance with hydrogen peroxide according to claim 1, it is characterised in that:
The highly doped silicon substrate is the highly doped monocrystalline substrate of p-type<100>crystal orientation.
3. a kind of film transistor device for improving radiation resistance with hydrogen peroxide according to claim 1, it is characterised in that:
The semiconductor layer material is selected from one of metal oxide.
4. a kind of film transistor device for improving radiation resistance with hydrogen peroxide according to claim 1, it is characterised in that:
The gate electrode is one of titanium, aluminium, nickel, gold, silver or several laminations.
5. a kind of film transistor device for improving radiation resistance with hydrogen peroxide according to claim 1, it is characterised in that:
The upper metal electrode is one of titanium, aluminium, nickel, gold, silver or several laminations.
6. a kind of preparation method for the film transistor device for improving radiation resistance with hydrogen peroxide, it is characterised in that: specific steps
Include:
A) presoma drug is dissolved in aqueous solution, obtaining concentration is 0.5-2.5 mol/L precursor solution；
B) hydrogen peroxide is added in precursor solution, obtains hydrogen peroxide precursor solution；Hydrogen peroxide concentration is 1-10 mol/L；
C) by hydrogen peroxide precursor solution ultrasonic vibration 15-60 minutes；
D) highly doped silicon substrate is cleaned, highly doped silicon substrate is completely immersed in and is held in the aqueous solution containing 2%-5% hydrofluoric acid, is impregnated
After 30-120 seconds, highly doped silicon substrate is rinsed with deionized water and removes remaining impurity and with being dried with nitrogen；
E) it will be spin-coated on cleaned highly doped silicon substrate with the hydrogen peroxide precursor solution got ready, spin speed 3000-
5500 revolutions per seconds, spin-coating time 20-60s；
F) the highly doped silicon substrate of the good hydrogen peroxide precursor solution of spin coating is placed in annealing on hot plate and forms dielectric layer, annealing temperature is
150-300oC, annealing time are 40-80 minutes；
G) semiconductor layer is prepared；
H) upper metal electrode and gate electrode are deposited.
7. a kind of preparation method of film transistor device that radiation resistance is improved with hydrogen peroxide according to claim 6,
It is characterized by: the presoma drug is that one or more of nitrate or villaumite of high dielectric constant metal are mixed mutually
Miscellaneous, the ratio of the total drug concentration of doping metals drug concentration Zhan is 0-50%.
8. a kind of preparation method of film transistor device that radiation resistance is improved with hydrogen peroxide according to claim 6,
It is characterized by: the preparation step of the semiconductor layer includes: that semiconductor precursor drug is dissolved in aqueous solution first, it is made
Concentration is 0.5-2.5mol/L semiconductor precursor solution；Semiconductor precursor drug is one or both of metal nitrate
The above doping mutually, the ratio of the total drug concentration of doping metals drug concentration Zhan are 0-50%；Semiconductor precursor solution is surpassed again
Acoustic shock is swung 15-60 minutes；Semiconductor precursor solution is spin-coated on the dielectric layer prepared afterwards, spin speed 3000-
5500 revolutions per seconds, spin-coating time 20-60s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910559526.6A CN110416310A (en) | 2019-06-26 | 2019-06-26 | A kind of film transistor device and preparation method improving radiation resistance with hydrogen peroxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910559526.6A CN110416310A (en) | 2019-06-26 | 2019-06-26 | A kind of film transistor device and preparation method improving radiation resistance with hydrogen peroxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110416310A true CN110416310A (en) | 2019-11-05 |
Family
ID=68359742
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910559526.6A Pending CN110416310A (en) | 2019-06-26 | 2019-06-26 | A kind of film transistor device and preparation method improving radiation resistance with hydrogen peroxide |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112382573A (en) * | 2020-11-12 | 2021-02-19 | 西交利物浦大学 | Synapse type thin film transistor based on lithium-doped transparent oxide and preparation method thereof |
| CN112436060A (en) * | 2020-11-23 | 2021-03-02 | 西交利物浦大学 | Thin film transistor doped with potassium ions and preparation method thereof |
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| CN109244239A (en) * | 2018-07-18 | 2019-01-18 | 华南师范大学 | A kind of zirconium doping Organic Thin Film Transistors and preparation method thereof |
| CN109767988A (en) * | 2018-12-25 | 2019-05-17 | 西交利物浦大学 | Metal oxide thin-film transistor and preparation method thereof |
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2019
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| KR20030049590A (en) * | 2001-12-15 | 2003-06-25 | 주식회사 하이닉스반도체 | Method for forming transistor of semiconductor decice |
| CN105489486A (en) * | 2016-01-18 | 2016-04-13 | 青岛大学 | Method for preparing thin-film transistor based on ultra-thin magnesium oxide high-k dielectric layer |
| CN109037031A (en) * | 2018-07-11 | 2018-12-18 | 华东师范大学 | A kind of nickel-doped CuO film transistor and preparation method |
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| CN112382573A (en) * | 2020-11-12 | 2021-02-19 | 西交利物浦大学 | Synapse type thin film transistor based on lithium-doped transparent oxide and preparation method thereof |
| CN112436060A (en) * | 2020-11-23 | 2021-03-02 | 西交利物浦大学 | Thin film transistor doped with potassium ions and preparation method thereof |
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