CN104134630A - Method for reducing damage to side wall of ultralow-dielectric-constant thin film - Google Patents
Method for reducing damage to side wall of ultralow-dielectric-constant thin film Download PDFInfo
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- CN104134630A CN104134630A CN201410411972.XA CN201410411972A CN104134630A CN 104134630 A CN104134630 A CN 104134630A CN 201410411972 A CN201410411972 A CN 201410411972A CN 104134630 A CN104134630 A CN 104134630A
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- dielectric constant
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- ultralow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
Abstract
The invention provides a method for reducing damage to the side wall of an ultralow-dielectric-constant thin film. The method comprises the steps of S01, depositing a dielectric barrier layer and a low-dielectric-constant layer with a pore-forming agent on a semiconductor substrate sequentially; S02, leading in carbonic gas to carry out plasma processing on the surface of the low-dielectric-constant layer; S03, removing the pore-forming agent; S04, forming a dielectric barrier layer and a metal hard mask layer on the surface of the low-dielectric-constant layer sequentially; S05, etching the metal hard mask layer, the dielectric barrier layers, a carbonic oxidation layer and the low-dielectric-constant layer to form a trench. According to the method, the carbonic gas is led in to carry out plasma processing on the low-dielectric-constant layer, the etching rate of the carbonic oxidation layer in a chemical solution approximates that of the low-dielectric-constant layer due to doped carbon, and therefore the side wall of the trench structure is prevented from being sunken; in addition, the doped carbon can decrease the dielectric constant value of the thin film and improve the electrical performance of a device.
Description
Technical field
The present invention relates to semiconductor integrated circuit and manufacture field thereof, relate in particular to a kind of method that reduces ultralow dielectric constant film sidewall damage.
Background technology
Along with the integrated level of integrated circuit improves constantly, also lasting develop rapidly of semiconductor technology.In semiconductor fabrication process, because aluminum interconnecting has good electric conductivity, and there is good adhesion property between aluminium and dielectric material, semi-conducting material, so be widely used in the back segment interconnection of integrated circuit; Yet, along with the further raising of integrated level, make the size of wire more and more less, and that the resistance of aluminum conductor just seem is higher, be difficult to meet the requirement of high current density, so aluminum interconnecting is transitioned into copper conductor gradually.
In addition, utilize dielectric layer with low dielectric constant as dielectric layer between metal layers, can effectively reduce electric capacity.Dielectric layer between metal layers (the intermetal dielectric that copper interconnection technology collocation advanced low-k materials forms, IMD) be current most popular interconnection structure process combination, it can effectively improve the phenomenon that resistance capacitance postpones, and it will become one of standard interconnection technique of semiconductor technology of future generation.
In integrated circuit technology, ultralow dielectric constant material must meet many conditions, for example: enough mechanical strengths are to support the framework of multilayer interconnection, high young's modulus, high-breakdown-voltage, low electric leakage, high thermal stability, good bonding strength, low water absorbable, low membrane stress, high planarization capability, low-heat is opened the compatibility of coefficient and CMP (Chemical Mechanical Polishing) process etc.
The method of the ultralow dielectric constant film of current existing formation is: step S01, deposit dielectric barrier layer 20 and the low-dielectric constant layer 30 (as shown in Figure 1) that contains pore-foaming agent 40 in Semiconductor substrate 10; Step S02, carries out oxygen gas plasma processing to low-dielectric constant layer 30 surfaces, to remove the reactant predecessor of low-dielectric constant layer 30 remained on surface, and forms oxide layer 50 (as shown in Figure 2) on low-dielectric constant layer 30 surfaces; Step S03, removes the pore-foaming agent 40 in low-dielectric constant layer 30, to form the low-dielectric constant layer 30 (as shown in Figure 3) of micropore; Step S04, low-dielectric constant layer 30 surfaces after processing form dielectric barrier layer 20 and metal hard mask layer 60 (as shown in Figure 4) successively; Step S05: adopt etching technics described metal hard mask layer 60, dielectric barrier layer 20, oxide layer 50 and low-dielectric constant layer 30 form groove 70 (as shown in Figure 5) in forming stepped construction; Step S06: at the interior filling metallic copper of groove 70, described metallic copper fills up the metal hard mask layer 60 of groove 70 covering groove 70 both sides; Step S07: adopt cmp to described metallic copper and above-mentioned stepped construction planarization, to exposing described low-dielectric constant layer 30.
But, in said method, owing to adopting oxygen gas plasma to process, remove residual reactant predecessor in reaction chamber, can cause film surface can form the relatively fine and close oxide layer of one deck, in the process of following adopted chemical solution etching groove, because the etch rate of oxide layer in chemical solution is greater than the etch rate of low-dielectric constant layer conventionally, thereby often there are recessed curved looks (please refer to Fig. 5) in the sidewall that causes groove 70 structures, with respect to the sidewall of low-dielectric constant layer 30, the side walls collapse of oxide layer 50 is often darker, thereby make the sidewall of groove 70 structures occur depression 80, the existence of depression 80 can affect follow-up manufacturing process, for example, in follow-up copper fill process, easily form the defects such as copper filling hole.Therefore, provide a kind of method that reduces ultralow dielectric constant film sidewall damage to become those skilled in the art's problem demanding prompt solution.
Summary of the invention
The object of this invention is to provide a kind of method that reduces ultralow dielectric constant film sidewall damage, can repair the harmful effect that sidewall damage that ultralow dielectric constant film brings due to etching causes, the sidewall planarization that keeps the groove structure after etching, this technique can make the K value of dielectric constant lower simultaneously.
For addressing the above problem, the invention provides a kind of method that reduces ultralow dielectric constant film sidewall damage, comprising:
Step S01: deposit dielectric barrier layer and low-dielectric constant layer successively in Semiconductor substrate, wherein, described low-dielectric constant layer contains pore-foaming agent;
Step S02: pass into carbonaceous gas plasma treatment is carried out in described low-dielectric constant layer surface, to remove the reactant on described low-dielectric constant layer surface, and form carbon containing oxide layer on described low-dielectric constant layer surface;
Step S03: described low-dielectric constant layer is carried out to UV treatment or heat treated, to remove described pore-foaming agent;
Step S04: the low-dielectric constant layer surface after processing forms dielectric barrier layer and metal hard mask layer successively;
Step S05: adopt etching technics to form groove in described metal hard mask layer, dielectric barrier layer, carbon containing oxide layer and low-dielectric constant layer form stepped construction.
Preferably, described carbonaceous gas is O
2with CO
2mist or pure CO
2gas.
Preferably, it is 2～10 holders that described carbonaceous gas is processed the required pressure of described low-dielectric constant layer, and power is 300～1500W, and gas flow is 100～2000sccm, and the processing time is 2s～20s.
Preferably, described carbonaceous gas also comprises inert gas.
Preferably, described inert gas is the combination of helium, argon gas, nitrogen, nitrogen fluoride or wherein one or more of carbon tetrafluoride.
Preferably, to described low-dielectric constant layer, mix carbon.
The method of preferably, mixing carbon is Implantation or plasma doping.
Preferably, the chemical vapour deposition (CVD) of described low-dielectric constant layer using plasma or spin coating-gel method forms, and the dielectric constant of described low-dielectric constant layer is 2.2-2.8.
Preferably, the material of described metal hard mask layer is Ta or Ti or W or TaN or TiN or WN.
Preferably, the material of the dielectric barrier layer in described step S1 is SiN or SiCN.
From technique scheme, can find out, in the method for the ultralow dielectric constant film of minimizing provided by the invention sidewall damage, pass into carbonaceous gas plasma treatment is carried out in described low-dielectric constant layer surface, the carbon mixing makes the etch rate of carbon containing oxide layer in chemical solution approach the etch rate of low-dielectric constant layer, thereby avoid the sidewall of groove structure to occur recessed curved looks, make the trenched side-wall after etching keep planarization, in addition, mix the dielectric constant values that carbon can also reduce the normal film of low dielectric, method provided by the invention is easy to realize, and the treatment effect of low-dielectric constant layer is more remarkable, improved the electric property of device.
Accompanying drawing explanation
Fig. 1 to Fig. 5 is the cross-sectional view of the low-dielectric constant layer that method forms of the ultralow dielectric constant film of existing formation.
Fig. 6 is the schematic flow sheet that the present invention reduces an execution mode of method of ultralow dielectric constant film sidewall damage;
Fig. 7 to Figure 11 by the present invention, reduce in embodiment of method of ultralow dielectric constant film sidewall damage the cross-sectional view of formation low-dielectric constant layer.
Embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.Secondly, the present invention utilizes schematic diagram to carry out detailed statement, and when example of the present invention is described in detail in detail, for convenience of explanation, schematic diagram does not amplify according to general ratio is local, should not using this as limitation of the invention.
Above-mentioned and other technical characterictic and beneficial effect, be elaborated to the method for the ultralow dielectric constant film of minimizing of the present invention sidewall damage in connection with embodiment and accompanying drawing 6 to Figure 11.Fig. 6 is the schematic flow sheet of a preferred embodiment of the present invention's method of reducing the damage of ultralow dielectric constant film sidewall; Fig. 7～11 are for adopting the schematic diagram of formation low-dielectric constant layer that method forms shown in Fig. 6.
Refer to Fig. 6, in the present embodiment, the invention provides a kind of method that reduces ultralow dielectric constant film sidewall damage and specifically comprise the following steps:
Step S01: deposit dielectric barrier layer 20 and low-dielectric constant layer 30 successively in Semiconductor substrate 10, wherein, described low-dielectric constant layer 30 contains pore-foaming agent 40 (as shown in Figure 7).
Wherein, the material of Semiconductor substrate 10 is monocrystalline silicon, can be that silicon, germanium silicon can also be other semi-conducting materials, does not repeat them here.
Concrete, in the present embodiment, the material of dielectric barrier layer 20 can be, but not limited to SiN or SiCN, low-dielectric constant layer 30 is preferably the silicon oxide layer that contains pore-foaming agent 40, described dielectric barrier layer 20 or low-dielectric constant layer 30 all can adopt existing plasma activated chemical vapour deposition or spin coating-gel growth, the dielectric constant of described low-dielectric constant layer is preferably 2.2-2.8, and the parameter adopting in forming process is such as pressure, reaction gas flow, temperature etc. can require to set according to actual process.Deposition process comprises the introducing of pore-foaming agent 40, and pore-foaming agent 40 is organic substance, mainly contains carbon and hydrogen and forms, and after ultraviolet ray irradiation or heating, can dissociate and volatilize forms cavity, thereby reduces the dielectric constant values of low-dielectric constant layer 30.
Step S02: pass into carbonaceous gas plasma treatment is carried out in described low-dielectric constant layer 30 surfaces, to remove the reactant on described low-dielectric constant layer 30 surfaces, and form 50 (as shown in Figure 8) of carbon containing oxide layer on described low-dielectric constant layer 30 surfaces.
Plasma is the 4th state of material, the vaporous material of ionization that the positron-electron that atom after being deprived of by portions of electronics and atom are ionized rear generation forms, this ionized gas is by atom, molecule, atomic group, ion, electronics forms, be subject to electric field action, they bump and form plasma, the activity of these ions is very high, its energy is enough to destroy nearly all chemical bond, surface in any exposure causes chemical reaction, the plasma of gas with various has different chemical properties, as existing oxygen gas plasma, it has very high oxidizability, can be oxidized photoresist reaction and generate gas, thereby reach the effect of cleaning.But after passing into oxygen, can form oxide layer 50 on low-dielectric constant layer 30 surfaces, and oxide layer 50 is different from the etch rate of low-dielectric constant layer 30 in chemical solution, causes the sidewall of groove 70 in successive process to produce 80 (as shown in Figure 5) of caving in.
Concrete, in the present embodiment, described carbonaceous gas can be, but not limited to mist or the pure CO2 gas of O2 and CO2, it is 2～10 holders that carbonaceous gas is processed the required pressure of described low-dielectric constant layer 30, power is 300～1500W, gas flow is 100～2000sccm, and the processing time is 2s～20s.Pass into carbonaceous gas plasma treatment is carried out in described low-dielectric constant layer 30 surfaces, the carbon mixing can make the etch rate of carbon containing oxide layer 50 in chemical solution approach the etch rate of low-dielectric constant layer 30, and reduce the dielectric constant values of carbon containing oxide layer 50, improve the electric property of semiconductor device.
In order further to reduce the etch rate of carbon containing oxide layer 50 in chemical solution, carbon containing oxide layer 50 and the etch rate of described low-dielectric constant layer 30 are consistent, carbonaceous gas can also comprise inert gas, and described inert gas can be, but not limited to the combination of helium, argon gas, nitrogen, nitrogen fluoride or wherein one or more of carbon tetrafluoride.
In the present embodiment, can also mix carbon to described low-dielectric constant layer 30, wherein, the method for mixing carbon can be Implantation or plasma doping, and wherein, carbon can be the molecule of carbon atom or carbon containing.By mixing carbon to low-dielectric constant layer 30, can further regulate the etch rate of low dielectric constant layer, both etch rates are consistent, thereby avoid the sidewall of groove 70 to occur depression.
Step S03: described low-dielectric constant layer 30 is carried out to UV treatment or heat treated, to remove described pore-foaming agent 40 (as shown in Figure 9).
Concrete, in the present embodiment, ultraviolet ray is irradiated or heat treated can be by organic substance decomposing, then the form with gas departs from film, forms hole, and ultraviolet ray simultaneously also can link the silicon-carbon bonds in film again, form finer and close skeleton structure, support like this hole.The time of UV treatment is preferably between 20s-500s, and treatment temperature is between 300 degree-480 degree.
Step S04: low-dielectric constant layer 30 surfaces after processing form dielectric barrier layer 20 and metal hard mask layer 60 (as shown in figure 10) successively.
Wherein, low-dielectric constant layer 30 is preferably the porous oxidation silicon layer of doping carbon, and the material of metal hard mask layer 60 can be, but not limited to Ta or Ti or W or TaN or TiN or WN.
Step S05: adopt etching technics described metal hard mask layer 60, dielectric barrier layer 20, carbon containing oxide layer 50 and low-dielectric constant layer 30 form groove 70 (as shown in figure 11) in forming stepped construction.
Concrete, in the present embodiment, etching technics is preferably wet-etching technology, while adopting wet-etching technology etching groove 70, preferably adopts diluted hydrofluoric acid (Dilute Hydrofluoric Acid, DHF) solution etching groove 70.The parameters such as the temperature of wet-etching technology, time can require to set according to actual process, stricter to the parameter request of the concentration of DHF and time in existing method.The concentration of DHF is preferably used low concentration, also can adopt high concentration, and the DHF of employing high concentration can accelerate to remove the efficiency of oxide layer, and the concentration of DHF is generally selected 200: 1, and the concentration ratio of described DHF is the volume ratio of the hydrofluoric acid of deionized water and 49%.
After completing above-mentioned steps, can continue to carry out other techniques that form cmos device Tong Hou road, these processing steps can adopt the familiar method of those skilled in the art to form, and therefore not to repeat here.
In sum, in the method for the ultralow dielectric constant film of minimizing provided by the invention sidewall damage, pass into carbonaceous gas plasma treatment is carried out in described low-dielectric constant layer surface, the carbon mixing makes the etch rate of carbon containing oxide layer in chemical solution approach the etch rate of low-dielectric constant layer, thereby avoid the sidewall of groove structure to occur recessed curved looks, make the trenched side-wall after etching keep planarization, in addition, mix the dielectric constant values that carbon can also reduce the normal film of low dielectric, method provided by the invention is easy to realize, and the treatment effect of low-dielectric constant layer is more remarkable, improved the electric property of device.
Above is only the preferred embodiments of the present invention, and embodiment is not in order to limit scope of patent protection of the present invention, and the equivalent structure that therefore every utilization specification of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (10)
1. a method that reduces ultralow dielectric constant film sidewall damage, is characterized in that, comprising:
Step S01: deposit dielectric barrier layer and low-dielectric constant layer successively in Semiconductor substrate, wherein, described low-dielectric constant layer contains pore-foaming agent;
Step S02: pass into carbonaceous gas plasma treatment is carried out in described low-dielectric constant layer surface, to remove the reactant on described low-dielectric constant layer surface, and form carbon containing oxide layer on described low-dielectric constant layer surface;
Step S03: described low-dielectric constant layer is carried out to UV treatment or heat treated, to remove described pore-foaming agent;
Step S04: the low-dielectric constant layer surface after processing forms dielectric barrier layer and metal hard mask layer successively;
Step S05: adopt etching technics to form groove in described metal hard mask layer, dielectric barrier layer, carbon containing oxide layer and low-dielectric constant layer form stepped construction.
2. the method for the ultralow dielectric constant film of minimizing as claimed in claim 1 sidewall damage, is characterized in that, described carbonaceous gas is O
2with CO
2mist or pure CO
2gas.
3. the method that the ultralow dielectric constant film of minimizing as claimed in claim 2 sidewall damages, it is characterized in that, it is 2～10 holders that described carbonaceous gas is processed the required pressure of described low-dielectric constant layer, and power is 300～1500W, gas flow is 100～2000sccm, and the processing time is 2s～20s.
4. the method for the ultralow dielectric constant film of minimizing as claimed in claim 1 sidewall damage, is characterized in that, described carbonaceous gas also comprises inert gas.
5. the method for the ultralow dielectric constant film of minimizing as claimed in claim 4 sidewall damage, is characterized in that, described inert gas is the combination of helium, argon gas, nitrogen, nitrogen fluoride or wherein one or more of carbon tetrafluoride.
6. the method for the ultralow dielectric constant film of minimizing as claimed in claim 1 sidewall damage, is characterized in that, to described low-dielectric constant layer, mixes carbon.
7. the method for the ultralow dielectric constant film of minimizing as claimed in claim 7 sidewall damage, is characterized in that, the method for mixing carbon is Implantation or plasma doping.
8. the method that the ultralow dielectric constant film of minimizing as claimed in claim 1 sidewall damages, it is characterized in that, the chemical vapour deposition (CVD) of described low-dielectric constant layer using plasma or spin coating-gel method forms, and the dielectric constant of described low-dielectric constant layer is 2.2-2.8.
9. the method for the ultralow dielectric constant film of minimizing as claimed in claim 1 sidewall damage, is characterized in that, the material of described metal hard mask layer is Ta or Ti or W or TaN or TiN or WN.
10. the method for the ultralow dielectric constant film of minimizing as claimed in claim 1 sidewall damage, is characterized in that, the material of the dielectric barrier layer in described step S1 is SiN or SiCN.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104569009A (en) * | 2014-12-29 | 2015-04-29 | 云南电网公司电力科学研究院 | Method for measuring X-ray radiation damage of solid insulating material based on microstructure and electric performance |
| CN116798952A (en) * | 2023-08-21 | 2023-09-22 | 合肥晶合集成电路股份有限公司 | Method for manufacturing semiconductor device and semiconductor device |
| CN117253850A (en) * | 2023-11-15 | 2023-12-19 | 合肥晶合集成电路股份有限公司 | Method for forming interconnection opening and method for forming interconnection structure |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903667B (en) * | 2011-07-26 | 2016-05-25 | 中芯国际集成电路制造(上海)有限公司 | The formation method of semiconductor devices |
| CN103646914B (en) * | 2013-11-26 | 2016-01-27 | 上海华力微电子有限公司 | A kind of ultraviolet light treatment method of low dielectric constant films |
| CN103871963A (en) * | 2014-02-21 | 2014-06-18 | 上海华力微电子有限公司 | Filming method of low-dielectric-constant film |
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2014
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104569009A (en) * | 2014-12-29 | 2015-04-29 | 云南电网公司电力科学研究院 | Method for measuring X-ray radiation damage of solid insulating material based on microstructure and electric performance |
| CN116798952A (en) * | 2023-08-21 | 2023-09-22 | 合肥晶合集成电路股份有限公司 | Method for manufacturing semiconductor device and semiconductor device |
| CN116798952B (en) * | 2023-08-21 | 2023-11-14 | 合肥晶合集成电路股份有限公司 | Method for manufacturing semiconductor device and semiconductor device |
| CN117253850A (en) * | 2023-11-15 | 2023-12-19 | 合肥晶合集成电路股份有限公司 | Method for forming interconnection opening and method for forming interconnection structure |
| CN117253850B (en) * | 2023-11-15 | 2024-02-02 | 合肥晶合集成电路股份有限公司 | Method for forming interconnection opening and method for forming interconnection structure |
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