CN102610516A - Method for improving adhesion force between photoresist and metal/metallic compound surface - Google Patents
Method for improving adhesion force between photoresist and metal/metallic compound surface Download PDFInfo
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- CN102610516A CN102610516A CN2011102064466A CN201110206446A CN102610516A CN 102610516 A CN102610516 A CN 102610516A CN 2011102064466 A CN2011102064466 A CN 2011102064466A CN 201110206446 A CN201110206446 A CN 201110206446A CN 102610516 A CN102610516 A CN 102610516A
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Abstract
The invention relates to the field of manufacturing semiconductors, in particular relating to a method for improving an adhesion force between photoresist and a metal/metallic compound surface. The method comprises the following steps of: adding oxidation atmosphere in a traditional process flow, oxidizing metal on the upper surface of the metal/metallic compound, and growing an adhersion transition layer so as to modifying the adhesion force of the upper surface of the metal/metallic compound and the photoresist, reduce the risk of photoresist removal and generation of process defect, and improve the process stability and the yield of devices.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of method that improves adhesion between photoresist and the metal/metal compound surface.
Background technology
Improve constantly along with what semiconducting behavior required; The size of IC chip is also more and more littler; And 45 complete nanometer technology chips, the difference of looking performance requirement approximately needs 40 to 60 photo-mask processs, so photoetching process just becomes operation most crucial in the chip manufacturing.Because dwindling also of device size constantly dwindled, and the size after the thickness that causes photoresist and the photoetching completion is also more and more littler, i.e. photoetching becomes a precision processing technology along with the figure of photoetching.For example; Along with chip production technology from micron order nanometer technology up till now; The employed wavelength of photoetching is also along with the progress of chip technology is constantly dwindled, and from the I anchor line (string) of mercury, the G anchor line (string) is to the 193nm ultraviolet ray of ultraviolet region; Extreme ultraviolet line (extreme ultraviolet is called for short EUV) and even electron beam.
Current, the manufacturing of chip has proposed very harsh process conditions to photoetching process, comprises edge roughness, size evenness, photoresist (Photoresist is called for short PR) cross section pattern, defective or the like.Photoresist and substrate caking power are not enough, can cause the photoresist perk, a series of problems such as generation defective, etching undercutting that come off, and wherein, it is the most serious defective that photoresist comes off, and can cause figure to lose efficacy, even cause sources of particles to jeopardize the zone of periphery.
Because the hydrophilic characteristics of metal surface, and photoresist shows as hydrophobicity, thereby causes metal than common oxide or silica-base film is more difficult combines closely with photoresist.Capacitance structure obtains application more and more widely in microwave or radio frequency chip along with metal-insulator-metal (metal-insulator-metal is called for short MIM), and the top crown of this kind electric capacity is exactly metal or metallic compound.Therefore, how to avoid photoresist to come off simply and effectively, become a very valuable research topic.
Avoid coming off of photoresist, most critical be the adhesive force that improves photoresist and substrate.Several kinds of methods that improve adhesive force comparatively commonly used at present have following several kinds:
The enhancing photoresist that integrated circuit manufacturing industry circle is at present general and the way of substrate caking power are to adopt the organic surperficial adhesion promotor of spin coating, and commonly used at present is hmds (Hexamethyldisilazane is called for short HMDS).Because photoresist is a kind of organic compound; Show as hydrophobicity; And be generally through the crystal column surface after the technologies such as the etching in the ic manufacturing process, pickling, washing, drying is hydrophilic metal/metal compound, therefore is difficult to directly form comparatively firm combining with photoresist.
Shown in Fig. 1-3, be conventional lithography process flowage structure sketch map.At first on the upper surface of the electric pole plate 11 of mim capacitor structure 1, the organic surperficial adhesion promotor HMDS molecular layer 12 of spin coating covers top crowns 11, and spin coating photoresist 13 covers HMDS molecular layers 12 then, to photoresist 13 make public, developing process.HMDS molecular layer 12 is as a kind of surfactant; Through HMDS molecular layer 12 at electric pole plate 11 surface-coated layer of surface activating agents; Its thickness is merely molecular layer one or two, and the lower surface of the upper strata of HMDS molecular layer 12 and photoresist 13 combines, and the upper surface of the lower floor of HMDS molecular layer 12 and electric pole plate 11 also can combine very closely; Thereby improve the binding ability of photoresist 13 and electric pole plate 11, the problem of avoiding photoresist 13 to come off; But the adhesive force of HMDS molecular layer is limited, and the gas in exposure, developing process, liquid, high temperature all can be to the photoresists 13 that retains
1The generation effect is because adhesion is not enough to resist above-mentioned effect, the photoresist 13 that retains
1Will perk, come off, thereby figure is changed and process failure, HMDS can produce amine simultaneously, not only to the toxic effect of PR, also can produce extra defective.
Chinese patent (publication number 1166798 is used for microelectronic no amine photoresist adhesion promoters) discloses a kind of organic bonding promoter, and its principle and above-mentioned principle are similar.But the weak point of the surperficial adhesion promotion agent method of putting down in writing in this patent is that the adhesive force that improves is limited; And desire obtains higher binding ability just must strengthen adhesive consumption; And the control of too thick development that can influence photoetching of adhesive and photoetching pattern, size; And the price of adhesive is higher, causes its cost expensive.
United States Patent (USP) (patent No. US6251804B1; Strengthen the method (Method for enhancing adhesion of photo-resist to silicon nitride surfaces) of silicon nitride with the adhesive force of photoresist on polycrystalline silicon gate pole surface) a kind of method that is used to strengthen the adhesive force of surperficial silicon nitride of polycrystalline silicon gate pole and photoresist disclosed; It mainly is to introduce an oxidizing process; Oxidant is the deionized water of dissolved ozone; The mixed liquor of oxygen gas plasma or dioxysulfate water is through changing the adhesion that nitrogen silicon dangling bonds improve silicon nitride layer and HMDS.But this invention is the reinforcement that is used for the nitride silicon based end of polysilicon gate, and to not doing elaboration at the bottom of the metal/metal compound-base.
United States Patent (USP) (patent No. US4332881A, the adhesion process in the integrated circuit (Resist adhesion in integrated circuit processing)) discloses a kind of technology that photoresist is divided into twice coating.At first be coated with the thin photoresist of one deck, high-temperature baking makes photoresist and substrate good combination then, carries out thicker photoresist coating then, can combine preferably than thick photoresist and thin photoresist, thereby reach the purpose that improves adhesion.But this method receives the photoresist Effect on Performance, and the adhesion that can improve is also limited, and owing to need repeatedly coating, to the exposure ability deleterious impact of whole photoresist, as dimensional homogeneity be difficult to control, follow-up remove photoresist bring defective etc.; In addition, this method also need repeatedly be coated with photoresist, causes the rising of production efficiency reduction and technology cost.
Form because metal and organic bonding are difficult, therefore, the adhesion with photoresist at the bottom of the metal/metal compound-base more is weaker than silicon or silicide substrate.Though and above-mentioned several method all has its advantage, all less than the adhesion that openly can effectively improve metal/metal compound-base basal surface and photoresist.
Along with development of technology, can become the surface that directly contacts with photoresist at the bottom of the increasing metal/metal compound-base, like the metal polar plate layer of electric capacity, metal line, metal hard mask plate etc.Therefore, how to find a kind of method can realize fast, cheap, the adhesion that improves between metal/metal compound surface and the photoresist of method becomes the important technology difficult problem that a semiconductor industry needs to be resolved hurrily reliably.
Summary of the invention
The invention discloses a kind of method that improves adhesion between photoresist and the metal/metal compound surface, the upper surface of the mim structure that semiconductor device comprised is provided with the metal/metal compound layer, wherein, comprises the steps:
Step S1: the plasma that under hot conditions, utilizes oxygen-containing gas carries out oxidation reaction to the upper surface of metal/metal compound layer, and making the burning on the upper surface of metal/metal compound layer is metal oxide;
Step S2: utilize the plasma of silica-based organic gas that metal oxide is handled, form the bonding transition zone of the upper surface that covers the metal/metal compound layer;
Step S3: after applying adhesion-promoting layer on the bonding transition zone, spin coating photoresist or directly spin coating photoresist on the bonding transition zone again.
The method of adhesion between described raising photoresist and the metal/metal compound surface, wherein, the scope of high temperature is 100-700 ℃ among the step S1.
The method of adhesion between described raising photoresist and the metal/metal compound surface, wherein, oxygen-containing gas is oxygen, ozone, carbon dioxide etc. among the step S1.
The method of adhesion between described raising photoresist and the metal/metal compound surface, wherein, the silica-based organic gas among the step S2 is the organic compound gas that contains silicon, carbon, hydrogen etc., preferably gas such as methane, dimethylsilane.
The method of adhesion between described raising photoresist and the metal/metal compound surface, wherein, the thickness of bonding transition zone is several thickness to the dozens of atomic layer among the step S2.
The method of adhesion between described raising photoresist and the metal/metal compound surface, wherein, the material of said adhesion-promoting layer is a hmds.
The method of adhesion between described raising photoresist and the metal/metal compound surface, wherein, the material of said metal/metal compound layer is aluminium, copper, tantalum, tantalum nitride, titanium, titanium nitride or tungsten etc.
In sum; Owing to adopted technique scheme; The present invention proposes a kind of method that improves adhesion between photoresist and the metal/metal compound surface, through in traditional technological process, adding oxidizing atmosphere, the metal of oxidized metal/metal compound layer upper surface; And one deck adhesive transition layer of growing on it; Thereby improve the adhesive force of metal/metal compound layer upper surface and photoresist, to reduce the risk and the generation of defective workmanship that photoresist comes off, the yield of raising technology stability and device.
Description of drawings
Fig. 1-the 3rd, conventional lithography process flowage structure sketch map in the background technology of the present invention;
Fig. 4-the 7th, the present invention improve the flowage structure sketch map of the method for adhesion between photoresist and the metal/metal compound surface.
Embodiment
Be further described below in conjunction with the accompanying drawing specific embodiments of the invention:
Shown in Fig. 4-7, the invention provides a kind of method that improves adhesion between photoresist and the metal/metal compound surface, on substrate 2, be sequentially set with first pole plate 21, dielectric layer 22 from bottom to up.Wherein, First pole plate 21 can be the copper with certain figure of reservation or the metal interconnecting wires of aluminium, also can be to utilize deposited by pvd metallic aluminium, copper, tantalum, tantalum nitride, titanium, titanium nitride to equal the metal/metal compound layer that forms on the substrate 2; Dielectric layer 22 is for utilizing chemical vapour deposition (CVD) (Chemical Vapor Deposition; Abbreviation CVD), ald (Atomic layer deposition; Be called for short ALD) or the boiler tube growth technique; Growth one deck contains silica, silicon nitride, silicon oxynitride, carborundum, the insulation dielectric layer of the high-k of any one or a few in fire sand, hafnium oxide or the aluminium oxide on first pole plate 21.
At first; In dielectric layer 22 upper surfaces growth material is second pole plate 23 of metal/metal compounds such as aluminium, copper, tantalum, tantalum nitride, titanium, titanium nitride or tungsten; After forming the MIM electric capacity mechanism of three level stack structure; In temperature is controlled at 100-700 ℃ of scope under the prerequisite; Adopting gases such as oxygen-containing gas such as oxygen, ozone, carbon dioxide, preferably adopt oxygen that the upper surface of second pole plate 23 is carried out the high-temperature oxydation Technology for Heating Processing, is metal oxide with the burning on the upper surface of oxidation second pole plate 23.In actual production process; Owing at the bottom of capacitive-based, be ready to carry out photoetching; A stand-by period is arranged, may produce particle or other defect, and the growth course of second pole plate 23 also can exist certain defective and inhomogeneities; Can eliminate the pickup or the other defect that possibly exist on second pole plate, 23 surfaces effectively through the high-temperature oxydation Technology for Heating Processing, return to the clean surface of atom level.It is can intensified response active that present embodiment preferably adopts oxygen gas plasma to carry out the high-temperature oxydation Technology for Heating Processing, thereby reduce reaction temperature, shortening the process time, and then reduces energy consumption, increases output.In the actual fabrication technology according to reaction speed, the temperature of device tolerance, factors such as cleaning efficiency are selected suitable oxidation processes mode and parameter.
Then; After the high-temperature oxydation Technology for Heating Processing is accomplished; Adopt the organic compound gas of siliceous, carbon, hydrogen, like gases such as methane, dimethylsilane, under plasma-activated effect; The upper surface of the above-mentioned organic compound gas and second pole plate 23 generates the bonding transition zone 24 of layer of metal-silicon-oxygen, and the thickness of bonding transition zone 24 is several thickness to the dozens of atomic layer.At this moment, the hydrophilic metal atomic layer of the upper surface of second pole plate 23 is modified as the easier bonding transition zone 24 that combines with photoresist or HMDS adhesion promotion layer 25, thereby its adhesion is greatly strengthened.The amplitude that promotes according to required adhesion in the actual fabrication technology is come choice reaction thing and response parameter.
At last, splash HMDS steam forms the HMDS adhesion promotion layer 25 that covers bonding transition zone 24, and its thickness is the thickness of several molecular layers; Spin coating photoresist 26 covers HMDS adhesion promotion layer 25, and after exposure, the development, the graphic structure of preparation definition is owing to changed the water-wet behavior of the upper surface of second pole plate 23, remaining photoresist 26
1Be difficult for producing the appearance of the peeling and the defective that comes off.
Wherein, the order between the technology of high-temperature oxydation Technology for Heating Processing and generation bonding transition zone can be inverted, and also can only adopt the arbitrary technology in two technologies to prepare.
Owing to adopted high-temperature oxydation Technology for Heating Processing and the technology that generates the bonding transition zone; Make the adhesion between photoresist and the metal/metal compound layer strengthen greatly; Therefore effectively the peeling of control photoresist with come off, thereby improve the reliability and the yield of technology.
Further, the present invention improves the method for adhesion between photoresist and the metal/metal compound surface, also can be used in the photoetching process of doing over again.At first, with the wafer behind the exposure imaging of failure, through the conventional technology of removing photoresist, after ashing and the pickling, with impurity such as the photoresistance of removal crystal column surface, HMDS.Then, adopt and embodiment one similar processing step, through the high-temperature plasma oxidation processes, it is residual with acid to remove the residual organic pickup of possibility, improves the crystal column surface state, obtains the clean surface; , utilize the organic compound plasma of siliceous, carbon etc. generate bonding transition zone,, thereby reduce the peeling of photoresist and the appearance of the defective that comes off with the cohesive force of the metal/metal compound layer after improving photoresist and doing over again thereafter.
In sum, owing to adopted technique scheme, the present invention to propose a kind of method that improves adhesion between photoresist and the metal/metal compound surface; Through the high-temperature oxydation Technology for Heating Processing; Remove the pickup and the inhomogeneous state of metal/metal compound-base basal surface effectively, and change the hydrophilicity at the bottom of the metal/metal compound-base, utilize gas to soak into absorption thereafter; Plasma reaction generates the layer of adhered transition zone then; With improve metallic substrates and photoresistance or with the adhesion of HMDS, reduce defective and photoresist obscission, lifting reliability of technology and yield.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (7)
1. method that improves adhesion between photoresist and the metal/metal compound surface, the upper surface of the mim structure that semiconductor device comprised is provided with the metal/metal compound layer, it is characterized in that, comprises the steps:
Step S1: the plasma that under hot conditions, utilizes oxygen-containing gas carries out oxidation reaction to the upper surface of metal/metal compound layer, and making the burning on the upper surface of metal/metal compound layer is metal oxide;
Step S2: utilize the plasma of silica-based organic gas that metal oxide is handled, form the bonding transition zone of the upper surface that covers the metal/metal compound layer;
Step S3: after applying adhesion-promoting layer on the bonding transition zone, spin coating photoresist or directly spin coating photoresist on the bonding transition zone again.
2. the method for adhesion is characterized in that between raising photoresist according to claim 1 and the metal/metal compound surface, and the scope of high temperature is 100-700 ℃ among the step S1.
3. the method for adhesion is characterized in that between raising photoresist according to claim 1 and the metal/metal compound surface, and oxygen-containing gas is oxygen, ozone, carbon dioxide among the step S1.
4. the method for adhesion between raising photoresist according to claim 1 and the metal/metal compound surface; It is characterized in that; Silica-based organic gas among the step S2 is the organic compound gas that contains silicon, carbon, hydrogen, preferably methane, dimethylsilane.
5. the method for adhesion is characterized in that between raising photoresist according to claim 1 and the metal/metal compound surface, and the thickness of bonding transition zone is several thickness to the dozens of atomic layer among the step S2.
6. the method for adhesion is characterized in that between raising photoresist according to claim 1 and the metal/metal compound surface, and the material of said adhesion-promoting layer is a hmds.
7. the method for adhesion is characterized in that between raising photoresist according to claim 1 and the metal/metal compound surface, and the material of said metal/metal compound layer is aluminium, copper, tantalum, tantalum nitride, titanium, titanium nitride or tungsten.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835727A (en) * | 2014-02-11 | 2015-08-12 | 北大方正集团有限公司 | Manufacturing method of semiconductor device back electrode |
| WO2019223631A1 (en) * | 2018-05-24 | 2019-11-28 | 京东方科技集团股份有限公司 | Method for preparing thin film transistor substrate, thin film transistor substrate, and display device |
| CN110660839A (en) * | 2019-11-13 | 2020-01-07 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof |
| CN110854075A (en) * | 2019-11-13 | 2020-02-28 | 上海华力集成电路制造有限公司 | CMOS device manufacturing method |
| WO2021067632A3 (en) * | 2019-10-02 | 2021-05-14 | Lam Research Corporation | Substrate surface modification with high euv absorbers for high performance euv photoresists |
| US11209729B2 (en) | 2014-01-31 | 2021-12-28 | Lam Research Corporation | Vacuum-integrated hardmask processes and apparatus |
| US11314168B2 (en) | 2020-01-15 | 2022-04-26 | Lam Research Corporation | Underlayer for photoresist adhesion and dose reduction |
| CN115373056A (en) * | 2022-07-29 | 2022-11-22 | 深圳通感微电子有限公司 | Microlens and method for manufacturing the same |
| US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1166798A (en) * | 1994-11-22 | 1997-12-03 | 配合液系统公司 | Non-aminic photoresist adhesion promoters for microelectronic applications |
| JPH1041222A (en) * | 1996-07-23 | 1998-02-13 | Japan Energy Corp | Manufacture of semiconductor device |
| CN101431015A (en) * | 2007-10-23 | 2009-05-13 | 应用材料股份有限公司 | Plasma surface treatment to prevent pattern collapse in immersion lithography |
| CN101719469A (en) * | 2009-11-10 | 2010-06-02 | 上海宏力半导体制造有限公司 | Method for manufacturing CVD silicon oxide capable of improving forming quality |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1166798C (en) * | 2001-03-14 | 2004-09-15 | 中国科学院金属研究所 | Wear-resistant Co-base alloy material |
-
2011
- 2011-07-22 CN CN201110206446.6A patent/CN102610516B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1166798A (en) * | 1994-11-22 | 1997-12-03 | 配合液系统公司 | Non-aminic photoresist adhesion promoters for microelectronic applications |
| JPH1041222A (en) * | 1996-07-23 | 1998-02-13 | Japan Energy Corp | Manufacture of semiconductor device |
| CN101431015A (en) * | 2007-10-23 | 2009-05-13 | 应用材料股份有限公司 | Plasma surface treatment to prevent pattern collapse in immersion lithography |
| CN101719469A (en) * | 2009-11-10 | 2010-06-02 | 上海宏力半导体制造有限公司 | Method for manufacturing CVD silicon oxide capable of improving forming quality |
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|---|---|---|---|---|
| US11209729B2 (en) | 2014-01-31 | 2021-12-28 | Lam Research Corporation | Vacuum-integrated hardmask processes and apparatus |
| CN104835727B (en) * | 2014-02-11 | 2017-08-25 | 北大方正集团有限公司 | Semiconductor devices backplate preparation method |
| CN104835727A (en) * | 2014-02-11 | 2015-08-12 | 北大方正集团有限公司 | Manufacturing method of semiconductor device back electrode |
| WO2019223631A1 (en) * | 2018-05-24 | 2019-11-28 | 京东方科技集团股份有限公司 | Method for preparing thin film transistor substrate, thin film transistor substrate, and display device |
| US11205667B2 (en) | 2018-05-24 | 2021-12-21 | HEFEI BOE OPTOELECTRONICS TECHNOLOGY, Co., Ltd. | Method of preparing thin film transistor substrate |
| US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
| WO2021067632A3 (en) * | 2019-10-02 | 2021-05-14 | Lam Research Corporation | Substrate surface modification with high euv absorbers for high performance euv photoresists |
| CN110660839A (en) * | 2019-11-13 | 2020-01-07 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof |
| CN110660839B (en) * | 2019-11-13 | 2022-04-29 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof |
| US11398410B2 (en) | 2019-11-13 | 2022-07-26 | Shanghai Huali Integrated Circuit Corporation | Method for manufacturing a CMOS device |
| CN110854075A (en) * | 2019-11-13 | 2020-02-28 | 上海华力集成电路制造有限公司 | CMOS device manufacturing method |
| US11314168B2 (en) | 2020-01-15 | 2022-04-26 | Lam Research Corporation | Underlayer for photoresist adhesion and dose reduction |
| CN115373056A (en) * | 2022-07-29 | 2022-11-22 | 深圳通感微电子有限公司 | Microlens and method for manufacturing the same |
| CN115373056B (en) * | 2022-07-29 | 2024-04-05 | 深圳通感微电子有限公司 | Microlens and method for manufacturing same |
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