CN210866188U - Thin film transistor device for improving radiation resistance by using hydrogen peroxide - Google Patents
Thin film transistor device for improving radiation resistance by using hydrogen peroxide Download PDFInfo
- Publication number
- CN210866188U CN210866188U CN201920977069.8U CN201920977069U CN210866188U CN 210866188 U CN210866188 U CN 210866188U CN 201920977069 U CN201920977069 U CN 201920977069U CN 210866188 U CN210866188 U CN 210866188U
- Authority
- CN
- China
- Prior art keywords
- hydrogen peroxide
- thin film
- film transistor
- transistor device
- radiation resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Thin Film Transistor (AREA)
Abstract
The utility model discloses a thin film transistor device for improving radiation resistance by using hydrogen peroxide, which comprises a gate electrode, a highly doped silicon substrate, a dielectric layer, a semiconductor layer and an upper metal electrode which are arranged from bottom to top in sequence; the upper metal electrode includes a source electrode and a drain electrode. The scheme can improve the radiation resistance of the thin film transistor device; the performance of the thin film transistor device is stable and reliable; the process is compatible with the traditional process, and the preparation cost can be effectively controlled.
Description
Technical Field
The utility model relates to a technique in the microelectronic device field specifically is a high dielectric constant material (high-kMaterial) ofThin film transistor devices (TFT devices).
Background
With the rapid development of space technology, space strategy weapons and microelectronic technology, more and more electronic components are adopted by space products. Most of the semiconductor devices (including semiconductor discrete devices, integrated circuits, etc.) are radiation sensitive devices, and the radiation environment affects the performance of the devices to various degrees, even makes the devices fail.
The space radiation environment mainly comes from cosmic rays, solar flare radiation, an internal and external range surrounding the earth, an Allen radiation band and the like. Although the radiation dose rate is very low, because the radiation dose rate is an accumulative effect, when the dose rate is accumulated to a certain value, the performance of an electronic device is changed, and if the dose rate is serious, the device completely fails, so that the electronic equipment cannot work normally.
With the improvement of the integration level of the device and the reduction of the working voltage, the sensitivity of the device to the single event effect is greatly improved, and the traditional silicon dioxide-based semiconductor device has lower radiation resistance and is not enough to stably and reliably work in a radiation environment for a long time. And some high-kThe radiation resistance of the material as a substitute for silica also needs to be improved. Therefore, it is necessary to take reinforcement measures in the links of the device such as material, circuit design, structural design, process manufacturing and packaging, etc. for various radiation effects, so that the device has a certain radiation resistance. The radiation-resistant reinforced device can improve the reliability and the service life of the spacecraft when applied to a space radiation environment, and can improve the efficiency and the penetration resistance when applied to a strategic weapon.
Disclosure of Invention
The utility model discloses the purpose is: aiming at the existing high-dielectric-constant-material-based material (high-kMaterials) has the above disadvantages, a high dielectric constant material (high-kMaterial) of a thin film transistor device (TFT device), can improve the radiation resistance of the semiconductor device, and can satisfy the requirement of the semiconductor device for a long time in a radiation environmentThe requirement of stable and reliable work is met, and meanwhile, the process is compatible with the traditional process, so that the preparation cost is controlled.
The technical scheme of the invention is as follows: a thin film transistor device with hydrogen peroxide to improve radiation resistance comprises a gate electrode, a highly doped silicon substrate, a dielectric layer, a semiconductor layer and an upper metal electrode which are arranged from bottom to top in sequence; the upper metal electrode comprises a source electrode and a drain electrode; and placing the high-silicon-doped substrate spin-coated with the hydrogen peroxide precursor solution on a hot plate for annealing to form a dielectric layer.
Preferably, the high-doped silicon substrate is a high-doped monocrystalline silicon substrate with a P type <100> crystal orientation.
Preferably, the semiconductor layer material is selected from one of metal oxides.
Preferably, the gate electrode is a lamination of one or more of titanium, aluminum, nickel, gold and silver.
Preferably, the upper metal electrode is one or a plurality of stacked layers of titanium, aluminum, nickel, gold and silver.
A method for improving a thin film transistor device with radiation resistance by using hydrogen peroxide comprises the following specific steps:
a) dissolving the precursor medicine in an aqueous solution to obtain a precursor solution with the concentration of 0.5-2.5 mol/L;
b) adding hydrogen peroxide into the precursor solution to obtain hydrogen peroxide precursor solution; the concentration of hydrogen peroxide is 1-10 mol/L;
c) ultrasonically oscillating the hydrogen peroxide precursor solution for 15-60 minutes;
d) cleaning the high silicon-doped substrate, completely immersing the high silicon-doped substrate into an aqueous solution containing 2-5% hydrofluoric acid, soaking for 30-120 seconds, washing the high silicon-doped substrate with deionized water to remove residual impurities, and drying with nitrogen;
e) spin-coating the prepared hydrogen peroxide precursor solution on a cleaned high-silicon-doped substrate at the spin-coating speed of 3000-5500 rpm for 20-60 s;
f) placing the high-silicon-doped substrate spin-coated with the hydrogen peroxide precursor solution on a hot plate for annealing to form a dielectric layer, wherein the annealing temperature is 150℃ and 300 DEG CoC, during annealingThe time is 40-80 minutes;
g) preparing a semiconductor layer;
h) and depositing an upper metal electrode and a gate electrode.
Preferably, the precursor medicine is one or more of high dielectric constant metal nitrate and high dielectric constant metal chloride which are mutually doped, the precursor medicine is one or more of nitrate or chloride of high dielectric constant metal which are mutually doped, and the concentration of the doped metal medicine accounts for 0-50% of the total medicine concentration.
Preferably, the step of preparing the semiconductor layer comprises: firstly, dissolving a semiconductor precursor medicine in an aqueous solution to prepare a semiconductor precursor solution with the concentration of 0.5-2.5 mol/L; the semiconductor precursor medicine is one or more than two kinds of metal nitrates which are mutually doped, and the concentration of the doped metal medicine accounts for 0-50% of the total medicine concentration; then the semiconductor precursor solution is subjected to ultrasonic oscillation for 15-60 minutes; and then spin-coating the semiconductor precursor solution on the prepared dielectric layer at the spin-coating speed of 3000-5500 rpm for 20-60 s.
The invention has the advantages that:
1. the radiation resistance of the thin film transistor device is improved;
2. the performance of the thin film transistor device is stable and reliable;
3. the process is compatible with the traditional process, and the preparation cost can be effectively controlled.
Drawings
The invention is further described with reference to the following figures and examples:
FIG. 1 is a schematic diagram of a thin film transistor device with improved radiation resistance using hydrogen peroxide according to the present disclosure;
FIG. 2 is a graph illustrating the drift of the flat-band voltage of an alumina thin film capacitor under negative bias radiation in a thin film transistor device with improved radiation resistance using hydrogen peroxide according to the present disclosure;
wherein: 100. a source electrode; 101. a drain electrode; 200. a semiconductor layer; 300. a dielectric layer; 400. a highly doped silicon substrate; 500. and a gate electrode.
Detailed Description
Example (b):
as shown in fig. 1, a thin film transistor device with improved radiation resistance by using hydrogen peroxide comprises a gate electrode 500, a highly doped silicon substrate 400, a dielectric layer 300, a semiconductor layer 200, and an upper metal electrode, which are sequentially arranged from bottom to top; the upper metal electrode includes a source electrode 100 and a drain electrode 101; the high-doped silicon substrate is a high-doped monocrystalline silicon substrate with a P-type <100> crystal orientation; the semiconductor layer material is selected from one of metal oxides; the gate electrode is a lamination of one or more of titanium, aluminum, nickel, gold and silver; the upper metal electrode is one or a plurality of laminated layers of titanium, aluminum, nickel, gold and silver.
A method for improving a thin film transistor device with radiation resistance by using hydrogen peroxide comprises the following specific steps:
a) dissolving a precursor medicine into an aqueous solution to obtain a precursor solution with the concentration of 2.5mol/L, wherein the precursor medicine is doped with aluminum nitrate and hafnium chloride, and the ratio of the aluminum nitrate to the hafnium chloride is 8: 2;
b) adding hydrogen peroxide into the precursor solution to obtain hydrogen peroxide precursor solution; the concentration of hydrogen peroxide is 7.5 mol/L;
c) ultrasonically oscillating the hydrogen peroxide precursor solution for 15 minutes;
d) cleaning a highly-doped silicon substrate, wherein the highly-doped silicon substrate is a highly-doped monocrystalline silicon substrate with a P-type <100> crystal orientation, completely immersing the highly-doped silicon substrate into an aqueous solution containing 2-5% hydrofluoric acid, and after immersing for 30-120 seconds, washing the highly-doped silicon substrate with deionized water to remove residual impurities and drying the highly-doped silicon substrate with nitrogen;
e) spin-coating the prepared hydrogen peroxide precursor solution on a cleaned high-silicon-doped substrate at the spin-coating speed of 4500 rpm for 40 s;
f) placing the high-silicon-doped substrate spin-coated with the hydrogen peroxide precursor solution on a hot plate for annealing to form a dielectric layer, wherein the annealing temperature is 300 DEGoC, annealing for 60 minutes;
g) preparing a semiconductor layer, wherein the material of the semiconductor layer is indium oxide; the preparation steps of the semiconductor layer comprise: firstly, dissolving indium nitrate in an aqueous solution to prepare a semiconductor precursor solution with the concentration of 0.5mol/L, and then ultrasonically oscillating the semiconductor precursor solution for 15 minutes; then spin-coating the semiconductor precursor solution on the prepared dielectric layer at the speed of 3000 r/s for 20 s;
h) depositing an upper metal electrode and a gate electrode, wherein the gate electrode and the upper metal electrode are one or more of titanium, aluminum, nickel, gold and silver; in the preferred embodiment, electron beam evaporation is adopted, and metal aluminum with the thickness of 300nm is deposited through a mask plate to serve as the aluminum metal source electrode 100, the aluminum metal drain electrode 101 and the aluminum gate electrode 500.
The strong oxidizing property of the hydrogen peroxide can accelerate the decomposition of impurities in the precursor solution at low temperature and form a metal frame structure, simultaneously reduce the content of oxygen vacancies in the film, improve the quality of the film and improve the interface between the metal oxide film and the silicon substrate, thereby improving the radiation resistance of the device. As can be seen from the drift diagram of the flat band voltage of the alumina thin film capacitor under negative bias radiation in fig. 2, the circular data represents the MOS device containing hydrogen peroxide, the flat band voltage drift of the MOS device has no obvious change after radiation, and the radiation resistance is obviously improved, while the triangular data represents the MOS device without hydrogen peroxide, and the flat band voltage drift generates obvious degradation after radiation.
The above embodiments are merely illustrative of the principles and effects of the present invention, and are not to be construed as limiting the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and technical concepts of the present invention be covered by the claims of the present invention.
Claims (5)
1. A thin film transistor device for improving radiation resistance by using hydrogen peroxide is characterized in that: the high-doping silicon-based high-density metal gate electrode structure comprises a gate electrode, a high-doping silicon substrate, a dielectric layer, a semiconductor layer and an upper metal electrode which are arranged from bottom to top in sequence; the upper metal electrode comprises a source electrode and a drain electrode; and placing the high-silicon-doped substrate spin-coated with the hydrogen peroxide precursor solution on a hot plate for annealing to form a dielectric layer.
2. The thin film transistor device with improved radiation resistance by using hydrogen peroxide according to claim 1, wherein: the high-doped silicon substrate is a high-doped monocrystalline silicon substrate with a P-type <100> crystal orientation.
3. The thin film transistor device with improved radiation resistance by using hydrogen peroxide according to claim 1, wherein: the semiconductor layer material is selected from one of metal oxides.
4. The thin film transistor device with improved radiation resistance by using hydrogen peroxide according to claim 1, wherein: the gate electrode is a lamination of one or more of titanium, aluminum, nickel, gold and silver.
5. The thin film transistor device with improved radiation resistance by using hydrogen peroxide according to claim 1, wherein: the upper metal electrode is one or a plurality of laminated layers of titanium, aluminum, nickel, gold and silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920977069.8U CN210866188U (en) | 2019-06-26 | 2019-06-26 | Thin film transistor device for improving radiation resistance by using hydrogen peroxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920977069.8U CN210866188U (en) | 2019-06-26 | 2019-06-26 | Thin film transistor device for improving radiation resistance by using hydrogen peroxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210866188U true CN210866188U (en) | 2020-06-26 |
Family
ID=71285825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920977069.8U Active CN210866188U (en) | 2019-06-26 | 2019-06-26 | Thin film transistor device for improving radiation resistance by using hydrogen peroxide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210866188U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110416310A (en) * | 2019-06-26 | 2019-11-05 | 西交利物浦大学 | A kind of film transistor device and preparation method improving radiation resistance with hydrogen peroxide |
-
2019
- 2019-06-26 CN CN201920977069.8U patent/CN210866188U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110416310A (en) * | 2019-06-26 | 2019-11-05 | 西交利物浦大学 | A kind of film transistor device and preparation method improving radiation resistance with hydrogen peroxide |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20190141632A (en) | Semiconductor device | |
| JP6138739B2 (en) | Organic electroluminescent device and manufacturing method thereof | |
| CN107170828B (en) | Ferroelectric field effect transistor and preparation method thereof | |
| CN105895801B (en) | The method for preparing monocrystalline oxide resistance-variable storing device using ion implanting lift-off technology | |
| CN110098261A (en) | A kind of thin film transistor and its manufacturing method, display base plate, panel, device | |
| CN210866188U (en) | Thin film transistor device for improving radiation resistance by using hydrogen peroxide | |
| CN103311130A (en) | Amorphous metallic oxide film transistor and preparation method thereof | |
| Miao et al. | In-situ secondary annealing treatment assisted effective surface passivation of shallow defects for efficient perovskite solar cells | |
| US20220077264A1 (en) | Display substrate and manufacturing method thereof and display device | |
| CN107046099B (en) | Perovskite solar battery and its manufacturing method | |
| KR101760839B1 (en) | Method for depositing a thin film electrode and thin film stack | |
| CN110416310A (en) | A kind of film transistor device and preparation method improving radiation resistance with hydrogen peroxide | |
| CN209747510U (en) | Metal oxide semiconductor capacitor device based on hafnium silicate | |
| CN111446368A (en) | Perovskite photovoltaic device and manufacturing method thereof | |
| CN111129160A (en) | Transparent thin film transistor device based on zirconium oxide and lanthanum oxide and preparation method thereof | |
| US9012909B2 (en) | Oxide semiconductor, oxide semiconductor thin film, and thin film transistor including the same | |
| CN106549022A (en) | A kind of array base palte and its manufacture method, display floater, electronic equipment | |
| US7915059B2 (en) | Method for fabricating organic light emitting diode with fluorine-ion-doped electrode | |
| KR20180049844A (en) | Etching composition and manufacturing method of wire patter and organic light emitting display device using the same | |
| CN109103263B (en) | Thin film transistor, manufacturing method thereof and manufacturing method of display panel | |
| CN109888023B (en) | Top gate type thin film transistor and manufacturing method thereof | |
| US20230117011A1 (en) | Display panel, preparation method, and display device | |
| US11450823B2 (en) | Method of manufacturing flexible substrate | |
| CN116368602A (en) | Semiconductor device with a semiconductor device having a plurality of semiconductor chips | |
| CN111613664A (en) | Thin film transistor, preparation method thereof and display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |